TWM597976U - Replaceable bellows structure and heating module using the same - Google Patents
Replaceable bellows structure and heating module using the same Download PDFInfo
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- TWM597976U TWM597976U TW109200230U TW109200230U TWM597976U TW M597976 U TWM597976 U TW M597976U TW 109200230 U TW109200230 U TW 109200230U TW 109200230 U TW109200230 U TW 109200230U TW M597976 U TWM597976 U TW M597976U
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 47
- 230000007246 mechanism Effects 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 235000014676 Phragmites communis Nutrition 0.000 claims abstract description 13
- 244000273256 Phragmites communis Species 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 244000089486 Phragmites australis subsp australis Species 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 13
- 238000005240 physical vapour deposition Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000000427 thin-film deposition Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
Description
本創作大致上是關於應用於半導體設備中反應腔體的加熱模組,特別是具有可拆卸式波紋管結構的加熱模組,容易與加熱器拆卸分離。 This creation is generally about the heating module used in the reaction chamber of the semiconductor device, especially the heating module with a detachable bellows structure, which is easy to disassemble and separate from the heater.
物理氣相沉積(Physical Vapor Deposition,PVD)是半導體製程中用以沉積薄膜最廣泛使用的製程之一。在PVD設備的高真空反應腔體中,利用相對重的原子如氬(Ar)或其他的惰氣電漿對承受負偏壓的靶材(target)進行轟擊,使得靶材的原料射出,並沉積在設置於加熱器上方的晶圓(wafer)上進行成膜。進行薄膜沉積的晶圓通常設置於加熱器的上方,利用加熱器針對晶圓進行加熱,提高晶圓的溫度以利於薄膜沉積製程的進行。 Physical Vapor Deposition (PVD) is one of the most widely used processes for depositing thin films in semiconductor processes. In the high-vacuum reaction chamber of the PVD equipment, relatively heavy atoms such as argon (Ar) or other inert gas plasma are used to bombard the target under negative bias, so that the raw material of the target is ejected, and The film is deposited on a wafer provided above the heater. The wafer for film deposition is usually set above the heater, and the heater is used to heat the wafer to increase the temperature of the wafer to facilitate the film deposition process.
請參考第1圖,其繪示一傳統應用於半導體PVD設備的加熱模組100立體示意圖。此加熱模組100包含加熱器本體110、波紋管結構(bellows)120、線性軸承(linear bearing)130及升降機構140。升降
機構140連接加熱器本體110的底部111,並且波紋管結構(bellows)120及線性軸承(linear bearing)130分別套設在升降機構140中。波紋管結構120包含波紋管部124及環形端部126,波紋管部124的兩端則分別焊接在加熱器本體110的底部111及環形端部126上。線性軸承130套設於升降機構140上並鄰接波紋管結構120。線性軸承130包含套筒132及多個滾珠(未繪示),這些滾珠設置於升降結構140與套筒132之間。線性軸承130的套筒132更包含鎖固部136,鎖固部136上具有多個鎖固結構138與波紋管結構120的環形端部126鎖固接合。
Please refer to FIG. 1, which shows a three-dimensional schematic diagram of a
詳細來說,在進行物理氣相沉積製程(或稱濺鍍製程)時,需維持晶圓與靶材間的間距,以獲得均勻的薄膜沉積。於是在薄膜沉積製程進行時,利用升降機構140推升加熱器本體110及位於加熱器本體110上方的晶圓到真空反應腔體中適當的位置;並在薄膜製程完成後,下降加熱器本體110到預設的初始位置。在加熱器本體110上升的過程中,加熱器本體110的底部111與波紋管結構120的環形端部126間的距離增加,波紋管部124也隨之拉伸;反之,在加熱器本體110下降的過程中,加熱器本體110的底部111與波紋管結構120的環形端部126間的距離減少,波紋管部124也隨之縮短。在經過多次的晶圓薄膜沉積製程後,波紋管部124容易因為多次的拉伸與縮短動作而造成破損。
In detail, during the physical vapor deposition process (or sputtering process), it is necessary to maintain the distance between the wafer and the target to obtain uniform film deposition. Therefore, when the film deposition process is in progress, the
如此一來,反應腔體裡所需要的高真空環境便會因為波紋管部124的破損部位產生漏氣而無法繼續進行半導體晶圓的薄膜沉積。
此時機台便需要停機更換整個包含加熱器本體110、波紋管結構(bellows structure)120、線性軸承(linear bearing)130及升降機構140的加熱器模組100。由於整個加熱模組100均需從設備上拆下,晶圓廠無法自行更換而需委由設備廠商進行更換,於是機台需要停機的時間過長,造成生產成本大幅提高。另一方面,若晶圓廠為了減少停機時間而自行在廠內進行更換,則需要預先進行整個加熱模組100的備品備料,如此將造成備料成本大幅提高。
As a result, the high vacuum environment required in the reaction chamber will be unable to continue the thin film deposition of the semiconductor wafer due to the leakage of the damaged part of the
有鑑於此,本創作提供一種具有可拆卸式波紋管結構的加熱模組,其波紋管結構與加熱器之間是利用可拆式鎖固結構並搭配氣密墊片進行氣密接合。因而,可方便進行波紋管結構的拆卸及更換波紋管結構備品。 In view of this, the present invention provides a heating module with a detachable bellows structure. The bellows structure and the heater are airtightly joined by a detachable locking structure and an airtight gasket. Therefore, it is convenient to disassemble the bellows structure and replace the spare parts of the bellows structure.
本創作提供一種波紋管結構,包含第一環形端部、波紋管部及第二環形端部。第一環形端部與第二環形端部上均具有複數個鎖固結構。波紋管部包含多個相互氣密接合的環形簧片,波紋管部的兩端分別與第一環形端部及第二環形端部氣密接合,且波紋管部的縱向長度隨著第一環形端部與第二環形端部間的距離而變化。 The present invention provides a bellows structure including a first annular end, a bellows and a second annular end. Both the first annular end and the second annular end are provided with a plurality of locking structures. The bellows portion includes a plurality of annular reeds that are airtightly joined to each other. Both ends of the bellows portion are airtightly joined to the first and second annular ends, and the longitudinal length of the bellows is as the first The distance between the ring end and the second ring end changes.
在本創作之一實施例中,上述第一環形端部的外徑大於波紋管部的外徑。 In an embodiment of the present invention, the outer diameter of the first annular end portion is larger than the outer diameter of the bellows portion.
在本創作之一實施例中,上述第二環形端部的外徑大於波 紋管部的外徑,且第二環形端部的外徑大於第一環形端部的外徑。 In an embodiment of this creation, the outer diameter of the second annular end is larger than the wave The outer diameter of the corrugated tube portion, and the outer diameter of the second annular end portion is greater than the outer diameter of the first annular end portion.
在本創作之一實施例中,上述第一環形端部的一側氣密連接波紋管部,其對側更包含一凹部及一凸環,凸環位於凹部中,且凸環之高度小於凹部之深度。 In an embodiment of the invention, one side of the first annular end is airtightly connected to the bellows, and the opposite side further includes a concave portion and a convex ring. The convex ring is located in the concave portion and the height of the convex ring is smaller than The depth of the recess.
本創作又提供一種加熱模組,適用於加熱半導體晶圓。加熱模組包含加熱器、波紋管結構、線性軸承及升降機構。加熱器包含加熱器本體及鎖固部,鎖固部位於加熱器本體的底部,且鎖固部具有複數個鎖固結構。升降機構設置於加熱器本體的底部。波紋管結構套設於升降機構並與加熱器之鎖固部氣密接合,其中波紋管結構包含第一環形端部、波紋管部及第二環形端部。第一環形端部上具有複數個鎖固結構與加熱器的該些鎖固結構接合。第二環形端部上具有複數個鎖固結構。波紋管部包含多個相互氣密接合的環形簧片,波紋管部的兩端分別與第一環形端部及第二環形端部氣密接合。線性軸承套設於升降機構並與波紋管結構之第二環形端部接合。 This creation also provides a heating module suitable for heating semiconductor wafers. The heating module includes a heater, a bellows structure, a linear bearing and a lifting mechanism. The heater includes a heater body and a locking part, the locking part is located at the bottom of the heater body, and the locking part has a plurality of locking structures. The lifting mechanism is arranged at the bottom of the heater body. The bellows structure is sleeved on the lifting mechanism and is airtightly joined with the locking part of the heater, wherein the bellows structure includes a first annular end, a bellows and a second annular end. A plurality of locking structures are provided on the first annular end to engage with the locking structures of the heater. A plurality of locking structures are provided on the second annular end. The bellows portion includes a plurality of annular reeds airtightly joined to each other, and two ends of the bellows portion are respectively joined to the first annular end and the second annular end in airtightness. The linear bearing is sleeved on the lifting mechanism and joined with the second annular end of the bellows structure.
在本創作之一實施例中,線性軸承包含一套筒及多個滾珠,該些滾珠設置於升降機構與套筒之間,套筒更包含一鎖固部與波紋管結構之第二環形端部接合。 In an embodiment of the invention, the linear bearing includes a sleeve and a plurality of balls. The balls are arranged between the lifting mechanism and the sleeve. The sleeve further includes a locking portion and a second annular end of the bellows structure.部合。 Unit joint.
在本創作之一實施例中,加熱器之鎖固部更包含第一凹部及第一凸環,第一凸環位於第一凹部中,且第一凸環之高度小於第一凹部之深度。 In an embodiment of the invention, the locking portion of the heater further includes a first concave portion and a first convex ring. The first convex ring is located in the first concave portion, and the height of the first convex ring is smaller than the depth of the first concave portion.
在本創作之一實施例中,波紋管結構之第一環形端部的一側氣密連接波紋管部,其對側更包含第二凹部及第二凸環,第二凸環位於第二凹部中,且第二凸環之高度小於第二凹部之深度。 In an embodiment of the present invention, one side of the first annular end of the bellows structure is airtightly connected to the bellows portion, and the opposite side further includes a second concave portion and a second convex ring, and the second convex ring is located at the second In the concave portion, the height of the second convex ring is smaller than the depth of the second concave portion.
在本創作之一實施例中,加熱模組更包含一氣密墊片套設於該升降機構中,且氣密墊片設置於第一凹部與第二凹部所形成的容置空間中,該第一凸環與該第二凸環分別嵌入該氣密墊片。 In an embodiment of the present invention, the heating module further includes an airtight gasket sleeved in the lifting mechanism, and the airtight gasket is disposed in the accommodation space formed by the first recess and the second recess. A convex ring and the second convex ring are respectively embedded in the airtight gasket.
在本創作之一實施例中,氣密墊片為銅墊片。 In an embodiment of this creation, the airtight gasket is a copper gasket.
在本創作之一實施例的加熱模組中,波紋管結構與加熱器之間是利用可拆式鎖固結構並搭配氣密墊片進行氣密接合。因而,當波紋管部的多個簧片因為加熱器多次升降後造成破損,而無法維持反應腔體腔室空間的高真空度時,即可方便進行波紋管結構的拆卸及更換波紋管結構備品。不僅可以降低半導體薄膜沉積設備的停機維修時間,提升半導體薄膜沉積設備的產能,更能大幅降低設備維修成本及備品庫存的成本。 In the heating module of one embodiment of the present invention, the bellows structure and the heater are airtightly joined by a detachable locking structure and an airtight gasket. Therefore, when the multiple reeds of the bellows part are damaged due to the heater being raised and lowered many times, and the high vacuum of the reaction chamber chamber space cannot be maintained, it is convenient to disassemble the bellows structure and replace the spare parts of the bellows structure . It can not only reduce the downtime of semiconductor thin film deposition equipment and increase the production capacity of semiconductor thin film deposition equipment, but also greatly reduce equipment maintenance costs and spare inventory costs.
為了讓本創作之上述目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,詳細說明如下: In order to make the above-mentioned purpose, features and advantages of this creation more obvious and understandable, the following is a detailed description of the preferred embodiments, in conjunction with the accompanying drawings:
100、200:加熱模組 100, 200: heating module
110、211:加熱器本體 110, 211: heater body
111、212、302:底部 111, 212, 302: bottom
120、220:波紋管結構 120, 220: bellows structure
124、224:波紋管部 124, 224: Bellows Department
126、226:第二環形端部 126, 226: second ring end
130、230:線性軸承 130, 230: Linear bearing
132、232:套筒 132, 232: sleeve
136、213、236:鎖固部 136, 213, 236: locking part
138、228、229、238:鎖固結構 138, 228, 229, 238: locking structure
140、240:升降機構 140, 240: lifting mechanism
215:定位銷 215: positioning pin
216:第一凹部 216: first recess
217:第一凸環 217: first convex ring
218:容置空間 218: accommodating space
222:第一環形端部 222: first ring end
223:第二凹部 223: second recess
225:第二凸環 225: second convex ring
234:滾珠 234: Ball
300:反應腔體 300: reaction chamber
304:側壁 304: side wall
306:靶材 306: Target
320:腔室空間 320: chamber space
H1、H2:高度 H1, H2: height
210:加熱器 210: heater
214:鎖固螺孔 214: Locking screw hole
第1圖係繪示傳統應用於半導體PVD設備的加熱模組立體示意圖。 Figure 1 is a three-dimensional schematic diagram of a heating module traditionally used in semiconductor PVD equipment.
第2圖係繪示依照本創作實施例之加熱模組的立體爆炸圖。 Figure 2 is a three-dimensional exploded view of the heating module according to this creative embodiment.
第3圖係繪示依照本創作實施例之加熱模組的立體示意圖。 Fig. 3 is a three-dimensional schematic diagram of the heating module according to this creative embodiment.
第4圖係繪示依照本創作實施例之加熱模組的剖面及局部放大圖。 Figure 4 is a cross-section and partial enlarged view of the heating module according to this creative embodiment.
第5(a)圖至第5(b)圖係繪示依照本創作實施例之加熱模組應用於PVD設備的反應腔體中不同製程階段的示意圖。 Fig. 5(a) to Fig. 5(b) are schematic diagrams showing the application of the heating module according to this creative embodiment to different process stages in the reaction chamber of the PVD device.
第2圖繪示依照本創作實施例之加熱模組200的立體爆炸圖。第3圖繪示本創作實施例加熱模組200的立體示意圖。請同時參照第2圖及第3圖,本創作實施例揭露一便於拆卸的加熱模組200,此加熱模組200適於應用在半導體設備中用以加熱半導體晶圓(wafer),例如是應用在物理氣相沉積(PVD)的真空濺鍍(Sputter)設備或化學氣相沉積(CVD)等設備中。加熱模組200包含加熱器210、波紋管結構220、線性軸承(linear bearing)230及升降機構240。
FIG. 2 shows a three-dimensional exploded view of the
加熱器210包含加熱器本體211及鎖固部213,鎖固部213位於加熱器本體211的底部212。在本實施例中,鎖固部213例如為一環狀凸部,其上分布有多個鎖固螺孔214及一個定位銷215,然本創作並不以此為限。加熱器本體211底部212與鎖固部213的中央則形成第一凹部216。加熱器210適於承載及加熱半導體晶圓(未繪示),使得半導體晶圓溫度上升而有利於薄膜沉積反應的進行。詳細來說,晶圓承載於加熱器210表面的舉升銷(未繪示)上並與加熱器210的表面間隔一適當的距離,而進行均勻加熱。升降機構240例如為一個不鏽鋼管,其
一端設於第一凹部216中並連接加熱器本體211的底部212,另一端則與馬達耦接,藉由馬達推動升降機構240來推升或降低加熱器210在反應腔體的位置。
The
波紋管結構220套設於升降機構240並鄰接加熱器210的底部212。波紋管結構220包含第一環形端部222、波紋管部224及第二環形端部226。第一環形端部222上具有複數個鎖固結構228,例如是螺栓,與加熱器210鎖固部213上的鎖固螺孔接合而固定在加熱器210的鎖固部213下方。第一環形端部222上更可以包含一定位孔(未繪示),可對應與加熱器210鎖固部213上的定位銷215搭配定位,便於鎖固部213與第一環形端部222的定位鎖固。第二環形端部226上同樣具有多個鎖固結構229,例如是鎖固螺孔,可與線性軸承230鎖固連接。波紋管部224位於第一環形端部222與第二環形端部226之間,且波紋管部224的兩端分別氣密接合於第一環形端部222和第二環形端部226。舉例來說,波紋管部224的兩端分別焊接在第一環形端部222和第二環形端部226上。波紋管部224包含多個相互氣密接合的環形簧片組成,這些簧片可隨著第一環形端部222和第二環形端部226間的距離而延展變化,並且保持氣密接合。第一環形端部222和第二環形端部226的外徑均大於波紋管部224的外徑,以利於分別設置第一環形端部222和第二環形端部226的鎖固結構228、229。第一環形端部222和第二環形端部226的外徑可依照設計選擇合適的大小,在本實施例中,第
一環形端部222的外徑與加熱器210鎖固部213的外徑約略相等,而小於第二環形端部226的外徑,然而本創作並不以此為限。
The
第4圖繪示依照本創作實施例之加熱模組200的剖面圖及加熱器210與波紋管結構220可拆卸氣密結合的局部放大圖。請同時參考第3圖和第4圖,在本創作實施例中,相較於傳統加熱模組100將波紋管結構120的波紋管部124直接焊接在加熱器110的底部111來形成氣密的接合,本創作提出可拆卸式的氣密接合方式。詳細來說,在加熱器210和波紋管結構220之間還包括有氣密墊片221,例如是銅墊片或O型環。如前文所述,加熱器本體211底部212與鎖固部213的中央形成第一凹部216,並且第一凹部216中還包含有第一凸環217,且第一凸環217的高度小於第一凹部216的深度。同樣的,波紋管結構220的第一環形端部222的一側氣密連接波紋管部224,其對側中央也形成第二凹部223和第二凸環225,第二凸環225位於第二凹部223中,且第二凸環225的高度小於第二凹部223的深度。第一凹部216和第二凹部223共同形成一容置空間218,氣密墊片221則套設於升降機構240並位於容置空間218中。並且,藉由鎖固結構228鎖固加熱器210的鎖固部213和波紋管結構220的第一環形端部222,使得第一凸環217及第二凸環225分別嵌入氣密墊片221的相對兩側,達成氣密接合狀態。
FIG. 4 shows a cross-sectional view of the
請同時參考第2圖~第4圖,線性軸承(linear bearing)230設置於波紋管結構220的下方並與波紋管結構220的第二環形端部226接
合。線性軸承230包含一套筒232及多個滾珠234,該些滾珠234設置於升降機構240與套筒232之間,藉由線性軸承230的多個滾珠234使得升降機構240可以線性平滑地在線性軸承230中移動而升降加熱器210。其中,套筒232更包含一鎖固部236,鎖固部236上設置多個鎖固結構238。該些鎖固結構238與波紋管結構220的第二環形端部226上的多個鎖固結構229鎖固接合。在本實施例中,鎖固結構238例如是螺栓,鎖固結構229例如是鎖固螺孔,然本創作並不以此為限。
Please refer to Figures 2 to 4 at the same time, the
第5(a)圖及第5(b)圖分別繪示本創作實施例之加熱模組200應用於物理氣相沉積設備的反應腔體中不同製程階段的示意圖。請參考第5(a)圖,其繪示本創作實施例之加熱模組200應用於物理氣相沉積設備的反應腔體300中的製程階段一的示意圖。詳細來說,例如是在薄膜沉積製程尚未開始,或者是薄膜沉積製程已經結束的階段,此時加熱器211設置在反應腔體300中的初始預設位置,或者已由薄膜沉積中的製程位置下降至初始位置。加熱器211在初始位置時,其上表面距離反應腔體底部302的高度為H1。反應腔體300由底部302、側壁304及靶材306所形成,本創作實施例之加熱模組200則藉由波紋管結構220的第二環形端部226固定於反應腔體底部302。也就是說,加熱模組200的加熱器211及波紋管結構220設置於反應腔體300的腔室空間320內,而線性軸承230則設置於腔室空間320之外。升降機構240的一端位於腔室空間320之外並耦接馬達(未繪示),另一端則延伸至腔室空間
320內的加熱器211底部212以升降加熱器211。
Fig. 5(a) and Fig. 5(b) respectively show schematic diagrams of the
請參考第5(b)圖,其繪示本創作實施例之加熱模組200應用於物理氣相沉積設備的反應腔體300中的製程階段二的示意圖。詳細來說,例如是在薄膜沉積製程進行中的階段,此時加熱器211從初始預設位置上升到製程設定位置,加熱器211的上表面距離反應腔體300底部302的高度為H2,H2>H1。加熱器211是藉由升降機構240推升其高度,並且波紋管結構220的波紋管部124隨著加熱器211上升而延伸其長度,亦即,波紋管部的縱向長度隨著第一環形端部與第二環形端部間的距離而變化。在薄膜沉積製程進行前,反應腔體300的腔室空間320需先行利用真空幫浦抽真空,使得腔室空間320內維持高真空狀態來進行薄膜沉積。波紋管部124包含多個相互氣密接合的環形簧片,並且波紋管部124的兩端分別與波紋管結構220的第一環形端部222及該第二環形端部226氣密接合。舉例來說,利用焊接的方式達成多個環形簧片之間及波紋管部124兩端和第一環形端部222及該第二環形端部226的氣密接合。如此一來,即便波紋管部124隨著加熱器211位置上升或下降而延伸或縮短,仍可維持腔室空間320內的高真空狀態。
Please refer to FIG. 5(b), which illustrates a schematic diagram of the second process stage when the
本創作所提供之加熱模組的波紋管結構與加熱器之間是利用前述的可拆式鎖固結構並搭配氣密墊片進行氣密接合。因而,在波紋管部的多個簧片因為加熱器多次升降後造成破損,而無法維持反應腔體腔室空間的高真空度時,即可方便進行波紋管結構的拆卸及更換 波紋管結構備品。反之,傳統加熱模組的波紋管部的簧片是直接焊接在加熱器底部,故當波紋管簧片破損時,需要更換包含加熱器、波紋管結構、線性軸承及升降機構的整組加熱模組。如此一來,本創作所提供之加熱模組不僅可以降低半導體薄膜沉積設備的停機維修時間,提升半導體薄膜沉積設備的產能,更能大幅降低設備維修成本及備品庫存的成本。 The bellows structure of the heating module provided by this creation and the heater are airtightly joined by the aforementioned detachable locking structure and matched with an airtight gasket. Therefore, when the multiple reeds of the bellows part are damaged due to the heater being raised and lowered several times, and the high vacuum of the reaction chamber chamber space cannot be maintained, the disassembly and replacement of the bellows structure can be facilitated Corrugated pipe structure spare parts. On the contrary, the reed of the bellows part of the traditional heating module is directly welded to the bottom of the heater. Therefore, when the bellows reed is damaged, the entire set of heating molds including the heater, bellows structure, linear bearing and lifting mechanism need to be replaced. group. In this way, the heating module provided by this creation can not only reduce the downtime of semiconductor thin film deposition equipment, increase the production capacity of semiconductor thin film deposition equipment, but also greatly reduce equipment maintenance costs and spare inventory costs.
雖然本揭露之技術內容與特徵係如上所述,然於本揭露之技術領域具有通常知識者仍可在不悖離本揭露之教導與揭露下進行許多變化與修改。因此,本揭露之範疇並非限定於已揭露之實施例而係包含不悖離本揭露之其他變化與修改,其保護範圍當視後附之申請專利範圍所界定者為準。 Although the technical content and features of this disclosure are as described above, those with ordinary knowledge in the technical field of this disclosure can still make many changes and modifications without departing from the teaching and disclosure of this disclosure. Therefore, the scope of this disclosure is not limited to the disclosed embodiments but includes other changes and modifications that do not depart from this disclosure. The scope of protection is subject to the scope of the attached patent application.
200:加熱模組 200: Heating module
210:加熱器 210: heater
211:加熱器本體 211: heater body
212:底部 212: bottom
213、236:鎖固部 213, 236: Locking part
214:鎖固螺孔 214: Locking screw hole
228、229、238:鎖固結構 228, 229, 238: locking structure
215:定位銷 215: positioning pin
216:第一凹部 216: first recess
220:波紋管結構 220: bellows structure
222:第一環形端部 222: first ring end
224:波紋管部 224: Bellows Department
226:第二環形端部 226: second ring end
230:線性軸承 230: Linear bearing
232:套筒 232: sleeve
240:升降機構 240: Lifting mechanism
Claims (10)
Priority Applications (1)
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TW109200230U TWM597976U (en) | 2020-01-07 | 2020-01-07 | Replaceable bellows structure and heating module using the same |
Applications Claiming Priority (1)
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TW109200230U TWM597976U (en) | 2020-01-07 | 2020-01-07 | Replaceable bellows structure and heating module using the same |
Publications (1)
Publication Number | Publication Date |
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TWM597976U true TWM597976U (en) | 2020-07-01 |
Family
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2020
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