CN116288273A - Showerhead, method of heating gas, and apparatus and method for processing semiconductor device - Google Patents
Showerhead, method of heating gas, and apparatus and method for processing semiconductor device Download PDFInfo
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- CN116288273A CN116288273A CN202310231923.7A CN202310231923A CN116288273A CN 116288273 A CN116288273 A CN 116288273A CN 202310231923 A CN202310231923 A CN 202310231923A CN 116288273 A CN116288273 A CN 116288273A
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- top cover
- gas
- showerhead
- heating
- sealing ring
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000012545 processing Methods 0.000 title claims abstract description 22
- 239000007921 spray Substances 0.000 claims abstract description 37
- 230000005291 magnetic effect Effects 0.000 claims abstract description 12
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 59
- 238000007789 sealing Methods 0.000 claims description 29
- 238000001816 cooling Methods 0.000 claims description 19
- 239000012495 reaction gas Substances 0.000 claims description 17
- 230000006698 induction Effects 0.000 claims description 15
- 238000005507 spraying Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 12
- 230000035699 permeability Effects 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000110 cooling liquid Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000003302 ferromagnetic material Substances 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 2
- 238000000427 thin-film deposition Methods 0.000 description 16
- 230000005674 electromagnetic induction Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000003672 processing method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a spray header, a method for heating gas and processing equipment of a semiconductor device. The shower head comprises: a top cover made of a conductive material; the coil is connected with the top cover, outputs an alternating magnetic field to the top cover through alternating current, and forms induced current on the top cover so as to heat the top cover; and the spray plate is arranged below the top cover and keeps a gap with the top cover to form a gas mixing cavity, wherein the heated top cover is contacted with gas in the gas mixing cavity to heat the gas.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a spray header, a gas heating method, and processing equipment and method of a semiconductor device.
Background
In the semiconductor field, the heating of shower plates is critical to the manufacture of semiconductors. The prior art in this field is through the heater strip, will spray the fixed plate heating of board, and the heat passes through the peripheral fixed plate and sprays the contact area of board, gives the board that sprays with heat transfer. Due to the hollow structure design in the middle of the spray plate, the middle area cannot be heated by contact heat conduction, and the main heat source is in contact heat conduction around. The efficiency of such heated shower plates can be relatively low and the heating response time long. Because the spraying plate and the spraying fixing plate are sealed by adopting the rubber sealing ring, when the spraying plate needs to meet 230 ℃ or higher for a long time, the bearing temperature of the sealing ring is higher, and then the sealing failure is caused.
In addition, the prior art also provides a scheme for heating the wafer tray by electromagnetic induction, which can uniformly heat the wafer tray in the reaction chamber by induction current so as to heat the reaction gas above the semiconductor device to be processed, thereby promoting the film deposition of the semiconductor device. However, this heating method, which generates induced current on the wafer tray, introduces a large amount of charges into the reaction chamber, which is very likely to form an arc in a high temperature and high voltage process environment, thereby damaging the semiconductor device. Therefore, such a heating method for generating an induced current in the reaction chamber cannot be applied to a thin film deposition process involving a high temperature and a high voltage, such as atomic layer thin film deposition (Atomic layer deposition, ALD).
In order to overcome the above-mentioned drawbacks of the prior art, there is a need in the art for a processing technology of a semiconductor device, which is capable of improving the heating efficiency of the reaction gas, reducing the power required for heating, and preventing the formation of an arc inside the reaction chamber by heating the showerhead at the front end of the reaction chamber by means of electromagnetic induction heating, so as to be suitable for a thin film deposition process involving high temperature and high voltage, such as atomic layer thin film deposition (ALD).
Disclosure of Invention
The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
In order to overcome the above-mentioned drawbacks of the prior art, the present invention provides a showerhead, a method for heating gas, and a processing apparatus for semiconductor devices, which can heat the showerhead at the front end of a reaction chamber by using electromagnetic induction heating, thereby improving the heating efficiency of the reaction gas, reducing the power required for heating, and preventing the formation of an arc inside the reaction chamber, so as to be suitable for a thin film deposition process involving high temperature and high voltage, such as atomic layer thin film deposition (ALD).
Specifically, the showerhead provided according to the first aspect of the present invention includes: a top cover made of a conductive material; a coil connected to the top cover, outputting an alternating magnetic field to the top cover via an alternating current, and forming an induction current at the top cover to heat the top cover; and the spray plate is arranged below the top cover and keeps a gap with the top cover to form a gas mixing cavity, wherein the heated top cover is contacted with gas in the gas mixing cavity to heat the gas.
Further, in some embodiments of the present invention, the showerhead further includes: the sealing ring is arranged in the edge area of the spraying plate, and the top cover is arranged on the spraying plate through the sealing ring; and the cooling structure is positioned between the top cover and the sealing ring and is used for absorbing heat transmitted from the top cover to the sealing ring.
Further, in some embodiments of the present invention, a water cooling structure is disposed in the cooling structure, or the cooling structure is connected with the water cooling structure.
Further, in some embodiments of the present invention, the top cover is made of a weak magnetic material, and a surface of the top cover, which is close to the coil, is covered with a high magnetic permeability induction layer, wherein the high magnetic permeability induction layer forms an induction current under the driving of the alternating magnetic field, and outputs the induction current to the top cover to heat the top cover.
Further, in some embodiments of the present invention, the top cover is made of copper-containing material, and the high permeability inductive layer is made of ferromagnetic material.
Further, in some embodiments of the present invention, the showerhead further includes an ac power source connected to the coils to output the alternating current to the coils.
Furthermore, the method of heating a gas provided according to the second aspect of the present invention comprises the steps of: inputting alternating current to a coil, outputting an alternating magnetic field to a top cover of a spray header through the alternating current, and forming induced current on the top cover to heat the top cover, wherein the top cover is made of conductive materials, and the coil is connected with the top cover; and inputting gas to the spray header, and heating the gas through contact of the heated top cover and the gas in a gas mixing cavity, wherein the gas mixing cavity is formed by a gap between a spray plate arranged below the top cover and the top cover.
Further, in some embodiments of the present invention, the heating method further includes the steps of: and low-temperature cooling liquid is input into the water cooling structure so as to absorb heat transmitted from the top cover to the sealing ring, wherein the sealing ring is arranged in the edge area of the spraying plate, and the top cover is installed on the spraying plate through the sealing ring.
Further, a processing apparatus of a semiconductor device according to a third aspect of the present invention includes: a gas source; a reaction chamber; and the spray header is positioned between the gas source and the reaction cavity and is used for heating the gas output by the gas source to the reaction cavity. Further, in some embodiments of the present invention, a processing apparatus of a semiconductor device may include:
further, a method of processing a semiconductor device according to a fourth aspect of the present invention includes the steps of: inputting reaction gas into the spray header; heating the reactant gas via the showerhead; and inputting the heated reaction gas into the reaction cavity below through a spray plate at the bottom of the spray head so as to process the semiconductor device.
Drawings
The above features and advantages of the present invention will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.
Fig. 1 illustrates a schematic structural diagram of a showerhead provided in accordance with some embodiments of the present invention.
Fig. 2 illustrates a schematic structural diagram of a showerhead provided in accordance with some embodiments of the present invention.
Fig. 3 illustrates a flow diagram of a method of heating a gas provided in accordance with some embodiments of the invention.
Fig. 4 is a flow chart illustrating a method for fabricating a semiconductor device according to some embodiments of the present invention.
Detailed Description
Further advantages and effects of the present invention will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present invention with specific examples. While the description of the invention will be presented in connection with a preferred embodiment, it is not intended to limit the inventive features to that embodiment. Rather, the purpose of the invention described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the invention. The following description contains many specific details for the purpose of providing a thorough understanding of the present invention. The invention may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the invention as it is described in terms of the apparatus being manufactured or operated in a particular orientation.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present invention.
As described above, in the semiconductor field, the heating of shower plates is critical to the manufacture of semiconductors. The prior art in this field is through the heater strip, will spray the fixed plate heating of board, and the heat passes through the peripheral fixed plate and sprays the contact area of board, gives the board that sprays with heat transfer. Due to the hollow structure design in the middle of the spray plate, the middle area cannot be heated by contact heat conduction, and the main heat source is in contact heat conduction around. The efficiency of such heated shower plates can be relatively low and the heating response time long. Because the spraying plate and the spraying fixing plate are sealed by adopting the rubber sealing ring, when the spraying plate needs to meet 230 ℃ or higher for a long time, the bearing temperature of the sealing ring is higher, and then the sealing failure is caused.
In addition, the prior art also provides a scheme for heating the wafer tray by electromagnetic induction, which can uniformly heat the wafer tray in the reaction chamber by induction current so as to heat the reaction gas above the semiconductor device to be processed, thereby promoting the film deposition of the semiconductor device. However, this heating method, which generates induced current on the wafer tray, introduces a large amount of charges into the reaction chamber, which is very likely to form an arc in a high temperature and high voltage process environment, thereby damaging the semiconductor device. Therefore, such a heating method for generating an induced current in the reaction chamber cannot be applied to a thin film deposition process involving a high temperature and a high voltage, such as atomic layer thin film deposition (Atomic layer deposition, ALD).
In order to overcome the defects in the prior art, the invention provides a spray header, a method for heating gas, a processing device of a semiconductor device and a processing method of the semiconductor device, wherein the spray header at the front end of a reaction chamber is heated in an electromagnetic induction heating mode, so that the heating efficiency of the reaction gas is improved, the power required by heating is reduced, and an arc is prevented from forming in the reaction chamber, so that the method is suitable for atomic layer thin film deposition (ALD) and other thin film deposition processes involving high temperature and high voltage.
In some non-limiting embodiments, the method for processing a semiconductor device according to the fourth aspect of the present invention may be implemented by the apparatus for processing a semiconductor device according to the third aspect of the present invention. The showerhead provided in the first aspect of the present invention may be configured in the semiconductor processing apparatus provided in the third aspect of the present invention to implement the processing method of the semiconductor device. The method for heating gas provided in the second aspect of the present invention may be configured in the showerhead to perform the method for processing the semiconductor device.
Please refer to fig. 1 first. Fig. 1 illustrates a schematic structural diagram of a showerhead provided in accordance with some embodiments of the present invention.
As shown in fig. 1, the showerhead provided in the first aspect of the present invention may include a top cover 11, a coil 12, and a shower plate 13. The showerhead may be disposed above the reaction chamber to uniformly spray the reaction gas toward the wafer tray inside the reaction chamber, so as to perform semiconductor processing such as atomic layer thin film deposition on the semiconductor devices on the wafer tray. The top cover 11 may be made of an electrically conductive material and located at the upper portion of the showerhead. The coil 12 may be connected to the top cover 11 to output an alternating magnetic field thereto via an alternating current, and an induced current is formed in the top cover to heat the top cover 11. The shower plate 13 may be provided under the top cover 11 with a gap with the top cover 11 to form a mixing chamber. Here, the heated top cover 11 may be in contact with the gas in the gas mixing chamber to heat the gas. Therefore, the showerhead can uniformly heat the reaction gas in the gas mixing chamber and uniformly spray the heated reaction gas through the wafer tray in the reaction chamber below the shower plate 13, thereby improving the heating efficiency of the reaction gas, reducing the power required for heating, shortening the heating response time, and preventing the formation of electric arcs in the reaction chamber, so as to be suitable for atomic layer thin film deposition (ALD) and other thin film deposition processes involving high temperature and high voltage.
Please refer to fig. 1 and fig. 2 in combination. Fig. 2 illustrates a schematic structural diagram of a showerhead provided in accordance with some embodiments of the present invention.
Further, in some embodiments of the present invention, as shown in fig. 1 and 2, the showerhead may further include a sealing ring 21 and a cooling structure 22. Here, the seal ring 21 may be provided in an edge region of the shower plate 13. The top cover 11 can be attached to the shower plate 13 via the sealing ring 21. The cooling structure 22 may be located between the top cover 11 and the sealing ring 21 for absorbing heat transferred from the top cover 11 to the sealing ring 21. Therefore, the spray header can avoid sealing failure caused by overhigh temperature, realize heating of the spray plate at the temperature of more than 230 ℃, protect the sealing ring and prolong the service life of the sealing ring.
Further, in some embodiments of the present invention, a water cooling structure may be disposed in the cooling structure or the cooling structure is connected to the water cooling structure.
Further, in some embodiments of the present invention, the top cover 11 may be made of a weak magnetic material. The surface of the top cover 11 close to the coil 12 may be covered with a high permeability induction layer. Here, the high permeability induction layer may form an induction current by the driving of the alternating magnetic field and output the induction current to the top cover 11 to heat the top cover 11. Therefore, the spray header can realize electromagnetic induction heating of the weak magnetic material spray plate.
Further, in some embodiments of the present invention, the top cover 11 may be made of copper-containing material, and the high permeability induction layer may be made of ferromagnetic material.
Further, in some embodiments of the present invention, the showerhead may further include an ac power source. The ac power source may be connected to the coil 12 to output the alternating current to the coil 12.
Further, in some embodiments of the present invention, the processing apparatus for a semiconductor device provided by the second invention of the present invention may include a gas source, a reaction chamber, and a showerhead provided by the first aspect of the present invention. Here, the showerhead may be located between the gas source and the reaction chamber for heating the gas output from the gas source to the reaction chamber.
The operation of the showerhead described above will be described in connection with some embodiments of the method of heating a gas. It will be appreciated by those skilled in the art that these examples of methods of heating gas are merely some non-limiting embodiments provided by the present invention, and are intended to clearly illustrate the general concepts of the present invention and to provide some embodiments that are convenient for public implementation, and are not intended to limit the overall functionality or overall operation of the showerhead. Similarly, the showerhead is only one non-limiting embodiment provided by the present invention and is not limited by the subject matter of the steps in the method of heating the gas.
Please refer to fig. 3. Fig. 3 illustrates a flow diagram of a method of heating a gas provided in accordance with some embodiments of the invention.
When the showerhead is used to heat the gas supplied from the gas source, the method of heating the gas may first input an alternating current to the coil via the ac power supply. Then, the method may output an alternating magnetic field to the top cover 11 of the showerhead via the alternating current, and induce a current in the top cover 11 to heat the top cover 11. The cover 12 can be made of an electrically conductive material. The coil 12 may be connected to the top cover 11. The method may then input gas to the showerhead via the gas source. The method may also heat the gas in the mixing chamber via contact of the heated top cover 11 with the gas. Here, the air mixing chamber may be formed by a gap between the shower plate 13 provided below the top cover 11 and the top cover 11.
Further, in the gas heating process, the heating method may further input a low-temperature cooling liquid into the water cooling structure to absorb heat transferred from the top cover 11 to the sealing ring. Here, the seal ring 21 may be provided in an edge region of the shower plate 13. The top cover 11 may be mounted on the shower plate 13 via the sealing ring 21.
The working principle of the processing apparatus of the semiconductor device described above will be described below in connection with some embodiments of the processing method of the semiconductor device. It will be appreciated by those skilled in the art that these examples of the processing method of the semiconductor device are merely some non-limiting embodiments provided by the present invention, and are intended to clearly illustrate the main concept of the present invention and to provide some embodiments for public implementation, not to limit the overall function or the overall operation of the processing apparatus of the semiconductor device. Similarly, the apparatus for processing semiconductor devices is a non-limiting embodiment provided by the present invention, and is not limited to the main body of execution of each step in the processing method of the semiconductor devices.
Please refer to fig. 1 and fig. 4 in combination. Fig. 4 is a flow chart illustrating a method for fabricating a semiconductor device according to some embodiments of the present invention.
In the processing of the semiconductor device, the method may first input a reaction gas into the showerhead. Thereafter, the method may also heat the reactant gas via the showerhead. Still further, the method may also introduce heated reaction gas into the underlying reaction chamber via the shower plate 13 at the bottom of the shower head, thereby processing the semiconductor device at high temperature and/or high voltage via an atomic layer thin film deposition (ALD) process. The principle of heating the gas has been described in detail in the above embodiments of the method for heating the gas, and will not be described in detail here.
Compared with the prior art that the spray plate fixing plate is heated by the heating wire, the heating ring and other parts, and then heat is transmitted to the spray plate through the contact area of the peripheral fixing plate and the spray plate, the invention adopts an electromagnetic induction heating mode to directly heat the spray plate, thereby obviously improving the heating efficiency of the reaction gas, reducing the power and the response time required by heating and improving the heating uniformity of the reaction gas. In addition, compared with the prior art of electromagnetic induction heating of the wafer tray, the invention can prevent the formation of electric arcs inside the reaction chamber, so as to be suitable for atomic layer thin film deposition (ALD) and other thin film deposition processes involving high temperature and high voltage.
While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood and appreciated by those skilled in the art.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A showerhead, comprising:
a top cover made of a conductive material;
a coil connected to the top cover, outputting an alternating magnetic field to the top cover via an alternating current, and forming an induction current at the top cover to heat the top cover; and
and the spray plate is arranged below the top cover and keeps a gap with the top cover to form a gas mixing cavity, wherein the heated top cover is contacted with gas in the gas mixing cavity to heat the gas.
2. The showerhead of claim 1, further comprising:
the sealing ring is arranged in the edge area of the spraying plate, and the top cover is arranged on the spraying plate through the sealing ring; and
and the cooling structure is positioned between the top cover and the sealing ring and is used for absorbing heat transmitted from the top cover to the sealing ring.
3. The showerhead of claim 2, wherein a water cooling structure is disposed within the cooling structure or the cooling structure is coupled to the water cooling structure.
4. The showerhead of claim 1, wherein the top cover is made of a magnetically weak material, and a surface of the top cover adjacent to the coil is covered with a high permeability induction layer, wherein the high permeability induction layer forms an induced current upon actuation of the alternating magnetic field and outputs the induced current to the top cover to heat the top cover.
5. The showerhead of claim 4, wherein the cap is made of a copper-containing material and the high permeability inductive layer is a ferromagnetic material.
6. The showerhead of claim 1, further comprising:
and the alternating current power supply is connected with the coils to output the alternating current to the coils.
7. A method of heating a gas comprising the steps of:
inputting alternating current to a coil, outputting an alternating magnetic field to a top cover of a spray header through the alternating current, and forming induced current on the top cover to heat the top cover, wherein the top cover is made of conductive materials, and the coil is connected with the top cover; and
and inputting gas into the spray header, and heating the gas through contact of the heated top cover and the gas in a gas mixing cavity, wherein the gas mixing cavity is formed by a gap between a spray plate arranged below the top cover and the top cover.
8. The method of claim 7, further comprising the step of:
and low-temperature cooling liquid is input into the water cooling structure so as to absorb heat transmitted from the top cover to the sealing ring, wherein the sealing ring is arranged in the edge area of the spraying plate, and the top cover is installed on the spraying plate through the sealing ring.
9. A processing apparatus for a semiconductor device, comprising:
a gas source;
a reaction chamber; and
the showerhead of any of claims 1-6, wherein the showerhead is positioned between the gas source and the reaction chamber for heating a gas output by the gas source to the reaction chamber.
10. A method of fabricating a semiconductor device, comprising the steps of:
inputting a reaction gas into the showerhead according to any one of claims 1 to 6;
heating the reactant gas via the showerhead; and
and inputting the heated reaction gas into a reaction cavity below through a spray plate at the bottom of the spray head so as to process the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310231923.7A CN116288273A (en) | 2023-03-10 | 2023-03-10 | Showerhead, method of heating gas, and apparatus and method for processing semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310231923.7A CN116288273A (en) | 2023-03-10 | 2023-03-10 | Showerhead, method of heating gas, and apparatus and method for processing semiconductor device |
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| CN202310231923.7A Pending CN116288273A (en) | 2023-03-10 | 2023-03-10 | Showerhead, method of heating gas, and apparatus and method for processing semiconductor device |
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| JPH07273101A (en) * | 1994-03-31 | 1995-10-20 | Tokyo Electron Ltd | Single sheet heat treatment system |
| US20090305509A1 (en) * | 2008-06-09 | 2009-12-10 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
| CN103155118A (en) * | 2010-10-19 | 2013-06-12 | 应用材料公司 | Chamber lid heater ring assembly |
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| CN110214201A (en) * | 2017-01-16 | 2019-09-06 | 库伯斯股份有限公司 | Process chamber and the thermalization method that executes in the chamber for chemical vapor deposition (CVD) reactor |
| CN113249687A (en) * | 2021-04-14 | 2021-08-13 | 拓荆科技股份有限公司 | Electric heating shower head structure in vacuum |
| CN113549900A (en) * | 2021-07-22 | 2021-10-26 | 东北大学 | Spraying plate structure of MOCVD equipment |
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2023
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07273101A (en) * | 1994-03-31 | 1995-10-20 | Tokyo Electron Ltd | Single sheet heat treatment system |
| US20090305509A1 (en) * | 2008-06-09 | 2009-12-10 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
| CN103155118A (en) * | 2010-10-19 | 2013-06-12 | 应用材料公司 | Chamber lid heater ring assembly |
| CN106498368A (en) * | 2016-11-21 | 2017-03-15 | 南昌大学 | A kind of spray head for MOCVD device |
| CN110214201A (en) * | 2017-01-16 | 2019-09-06 | 库伯斯股份有限公司 | Process chamber and the thermalization method that executes in the chamber for chemical vapor deposition (CVD) reactor |
| CN113249687A (en) * | 2021-04-14 | 2021-08-13 | 拓荆科技股份有限公司 | Electric heating shower head structure in vacuum |
| CN113549900A (en) * | 2021-07-22 | 2021-10-26 | 东北大学 | Spraying plate structure of MOCVD equipment |
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