CN103594315B - A kind of plasma processing device - Google Patents
A kind of plasma processing device Download PDFInfo
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- CN103594315B CN103594315B CN201310342269.3A CN201310342269A CN103594315B CN 103594315 B CN103594315 B CN 103594315B CN 201310342269 A CN201310342269 A CN 201310342269A CN 103594315 B CN103594315 B CN 103594315B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Abstract
The invention provides a kind of plasma processing device, comprise reaction chamber, upper excitation radio frequency power source, direct current power source and wafer support, described upper excitation radio frequency power source produces the energy of plasma in order to provide; Described wafer support is located in described reaction chamber, and it comprises for the pallet of bearing wafer and the chuck for carrying described pallet; Be provided with pallet electrode in pallet, in chuck, be provided with chuck electrode, pallet and chuck electrically insulated from one another, and with plasma electric insulation, direct current power source be used between pallet electrode and chuck electrode and between pallet electrode and wafer, produce voltage difference respectively; And the first electric capacity is formed between wafer and pallet electrode, between pallet electrode and chuck electrode, form the second electric capacity, the first electric capacity and the second Capacitance parallel connection.This plasma apparatus cavity structure, not only functional, reliability is high, and structure is simple, with low cost.
Description
Technical field
The invention belongs to field of semiconductor processing, relate to a kind of plasma processing device.
Background technology
ICP plasma dry etch equipment is the common equipment of processing semiconductor device.In order to process more wafers simultaneously, often more wafers is placed on larger-size tray surface, then the loading end of chuck pallet being put into plasma process chamber carries out processing process.
In the actual course of processing, plasma is known from experience makes the temperature of wafer exceed temperature needed for technique, therefore needs to control the temperature of wafer.Traditional control temperature mode blows cold media gas (as helium) at the back side (another side contrary with wafer process face) of wafer, regulates by the temperature of cold media gas to wafer.In order to fixed wafer and avoid cold media gas to leak, need apply towards the active force in chuck direction at the edge of wafer with pressing unit.This fixed form not only implements trouble, and poor stability, affects cooling effect.In addition, pressing unit needs the machined surface occupying wafer, reduces effective working (finishing) area of wafer.
For this reason, person skilled develops the mode utilizing electrostatic force (or being referred to as Coulomb force) fixed wafer.Fig. 1 is existing a kind of generalized section utilizing an example of electrostatic force fixed wafer.As shown in Figure 1, pallet 102 is placed on the loading end of tray support platform 101, and wafer S is placed on the loading end of pallet 102.In pallet 102, be provided with electrode 106, electrode 106 is electrically connected with ESC power supply 105 by spring terminal.After energising, the machined surface of wafer S induces the opposite polarity charge layer with electrode 106, makes to produce voltage difference between wafer S and electrode 106, thus wafer S is fixed on the loading end of pallet 106.Cover plate 103 for by pallet 106 not by region overlay that wafer S covers.Pallet 102 is the loading ends being fixed on tray support platform 101 by mechanical pressure ring 104.
This utilize the mode of electrostatic force fixed wafer S to be fixed on pallet 102 surface but pallet 102 still needs mechanical pressure ring 104 to fix, it is complex structure not only, and cost is high, troublesome poeration, and mechanical part easily damages, maintenance work will affect the service efficiency of plasma processing device.
Summary of the invention
For at least one of solving the problem, the invention provides a kind of plasma processing device, the structure of its chuck and pallet is simple, and cost is low, easy to use, and not fragile.
The technical scheme adopted solved the problems of the technologies described above is to provide a kind of plasma processing device, comprise reaction chamber, upper excitation radio frequency power source, direct current power source and wafer support, described upper excitation radio frequency power source produces the energy of plasma in order to provide;
Described wafer support is located in described reaction chamber, and it comprises for the pallet of bearing wafer and the chuck for carrying described pallet;
Pallet electrode is provided with in described pallet, chuck electrode is provided with in described chuck, described pallet and described chuck electrically insulated from one another, and with plasma electric insulation, described direct current power source in order to produce voltage difference respectively between described pallet electrode and described chuck electrode and between described pallet electrode and described wafer; And the first electric capacity is formed between described wafer and described pallet electrode, between described pallet electrode and described chuck electrode, form the second electric capacity, described first electric capacity and described second Capacitance parallel connection.
Wherein, described direct current power source comprises a DC power supply, and described DC power supply comprises cathode output end and cathode output end, and described cathode output end is electrically connected with described pallet electrode, described cathode output end ground connection, described chuck electrode ground connection; Or described cathode output end is electrically connected with described pallet electrode, described cathode output end ground connection, described chuck electrode ground connection.
Wherein, described direct current power source comprises a DC power supply, described DC power supply comprises cathode output end, cathode output end and common port, described pallet electrode is electrically connected with the cathode output end of described DC power supply or the cathode output end of described DC power supply, described common end grounding, described chuck electrode ground connection.
Wherein, described direct current power source comprises a DC power supply, and described DC power supply comprises cathode output end and common port, and described cathode output end is electrically connected with described pallet electrode, described common end grounding, described chuck electrode ground connection;
Or described DC power supply comprises cathode output end and common port, cathode output end is electrically connected with described pallet electrode, described common end grounding, described chuck electrode ground connection.
Wherein, between described pallet electrode and described DC power supply, filter circuit is serially connected with.
Wherein, described filter circuit is alternating-current resistance.
Wherein, described filter circuit is the filter circuit that rf attenuation is less than-10dB.
Wherein, described filter circuit comprises n inductance and n electric capacity, n described inductance series connection, n described Capacitance parallel connection, described electric capacity and described inductance in parallel, and one end ground connection of described electric capacity, the integer of n >=1.
Wherein, described direct current power source comprises the first DC power supply and the second DC power supply, described first DC power supply and described second DC power supply comprise cathode output end, cathode output end and common port separately, cathode output end or the cathode output end of described pallet electrode and described first DC power supply are electrically connected, cathode output end or the cathode output end of described chuck electrode and described second DC power supply are electrically connected, the common port of described first DC power supply and the equal ground connection of common port of described second DC power supply.
Wherein, between described pallet electrode and described direct current power source and between described chuck electrode and described direct current power source, filter circuit is serially connected with respectively.
Wherein, described filter circuit is alternating-current resistance.
Wherein, described filter circuit is the filter circuit that rf attenuation is less than-10dB.
Wherein, described filter circuit comprises n inductance and n electric capacity, n described inductance series connection, n described Capacitance parallel connection, described electric capacity and described inductance in parallel, and one end ground connection of described electric capacity, the integer of n >=1.
Wherein, described pallet comprises tray body and insulating barrier, and described tray body adopts electric conducting material to make, the outer surface of the coated described tray body of described insulating barrier, and described tray body is as described pallet electrode;
Described chuck comprises chuck body and insulating barrier, and described chuck body adopts electric conducting material to make, and the outer surface of the coated described chuck body of described insulating barrier, described chuck body is as described chuck electrode.
Wherein, described insulating barrier is for obtain by sprays insulating material mode; Or the alundum (Al2O3) layer for being obtained by anodic oxidation mode.
Wherein, described insulating material comprises quartz or ceramic or metal oxide.
Wherein, be provided with the first chuck refrigerant passage in described chuck, the first coolant media cools described chuck by described first chuck refrigerant passage.
Wherein, described first coolant media is refrigerant liquid.
Wherein, described refrigerant liquid is fluorine cooling fluid.
Wherein, be also provided with the second chuck refrigerant passage running through its thickness direction, be provided with chuck annular groove at the loading end of described chuck in described chuck, described chuck annular groove is communicated with described second chuck refrigerant passage;
The pallet refrigerant passage running through its thickness direction is provided with in described pallet, pallet annular groove is provided with at the lower surface of described pallet, described pallet annular groove is relative with the position of described chuck annular groove, and described pallet refrigerant passage is communicated with described chuck annular groove, second coolant media is supplied to the back side of wafer successively via the second chuck refrigerant passage, chuck annular groove, pallet annular groove and pallet refrigerant passage, to cool wafer.
Wherein, described second coolant media is cold media gas.
Wherein, described cold media gas is helium.
Wherein, the size of the lower surface of described pallet is not less than the size of the loading end of described chuck.
Wherein, be provided with medium window at the top of described reaction chamber, described top electrode comprises inductance-coupled coil, and described inductance-coupled coil is located at the top of described medium window.
Wherein, comprise lower radio frequency power source, described lower radio frequency power source is connected with described chuck electrode, in order to produce DC auto-bias in wafer surface, carries out processing process to attract plasma to wafer surface.
Wherein, described upper excitation radio frequency power source and described lower radio frequency power source are two independently radio-frequency power supplies, or two that are exported by radio-frequency power supply independently radio-frequency powers.
Wherein, the loading end of described pallet is provided with boss, and described wafer is placed in the top of described boss;
Also comprise cover plate, described cover plate is stacked and placed on the loading end of described pallet, and described cover plate is provided with location hole, and described location hole is relative with the position of described boss, and the machined surface of described wafer is exposed to described plasma by described location hole.
Wherein, described cover plate adopts quartz or ceramic material.
Wherein, described plasma processing device is ICP plasma dry etchers or ITO Pvd equipment.
Wherein, the material of described wafer is sapphire, silicon or silica.
The present invention has following beneficial effect:
Plasma processing device provided by the invention, pallet electrode is provided with in pallet, chuck electrode is provided with in chuck, between described pallet electrode and described chuck electrode and between described pallet electrode and described wafer, voltage difference is produced respectively by direct current power source, voltage difference between pallet electrode and described chuck electrode makes to produce electrostatic adsorption force between pallet and chuck, thus pallet is fixed on the loading end of chuck; Voltage difference between pallet electrode and described wafer makes to produce electrostatic adsorption force between pallet and wafer, thus wafer is fixed on the loading end of pallet; That is, by Electrostatic Absorption mode, wafer and pallet are individually fixed in pallet and chuck, avoid using mechanical pressure ring, first simplicity of design, simplifies the structure, and reduces the manufacturing cost of plasma processing device; Secondly simple to operate, the working (machining) efficiency of plasma processing device can be improved; Reliability is high again, not fragile, reduces maintenance cost, can improve the utilization rate of plasma processing device.In addition, adopt Electrostatic Absorption mode fixed wafer and pallet, can effectively avoid leaking of cold media gas, thus the temperature of wafer is effectively managed.In addition, described first electric capacity and described second Capacitance parallel connection, the power of direct current power source can be effectively utilized, the electrostatic adsorption force between pallet and wafer and the electrostatic adsorption force between pallet and chuck can be made to maximize, improve the adsorption effect of wafer and pallet on the one hand, wafer and pallet are fixed better, prevents leaking of cold media gas; On the other hand, the electrostatic adsorption force producing formed objects needs low voltage, thus reduces the voltage withstand class of pallet and chuck, and then reduces the cost of pallet and chuck.
Accompanying drawing explanation
Fig. 1 is existing a kind of generalized section utilizing an example of electrostatic force fixed wafer;
Fig. 2 is the generalized section of the part-structure of embodiment of the present invention plasma arc processing apparatus;
Fig. 3 is the generalized section of the part-structure of another embodiment of the present invention plasma processing device;
Fig. 4 is the structural representation of yet another embodiment of the invention plasma processing device.
Fig. 5 is the isostructural generalized section of electrostatic chuck of the present invention;
Fig. 6 is the schematic diagram of another filter circuit of the embodiment of the present invention;
Fig. 7 is the schematic diagram of an embodiment of the present invention filter circuit again
Fig. 8 is two pieces of schematic diagrames with the direct current pole plate of opposite charges.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, plasma arc processing apparatus provided by the invention is described in detail.
The embodiment of the present invention provides a kind of plasma arc processing apparatus, and Fig. 2 is the generalized section of the part-structure of embodiment of the present invention plasma arc processing apparatus.As shown in Figure 2, plasma arc processing apparatus comprises reaction chamber 16, the locular wall ground connection of reaction chamber 16.Bottom in reaction chamber 16 is provided with chuck base 8, and chuck 6 is fixed on the top of chuck base 8, and pallet 5 is positioned over the loading end (upper surface of chuck shown in figure) of chuck 6, and pallet 5 is for bearing wafer 3.Be provided with medium window 17 on the top of reaction chamber 16, inductance-coupled coil 15 is placed in the top of medium window 17, and inductance-coupled coil 15 is electrically connected with upper excitation radio frequency power source 10 by upper adaptation 9.Wherein, upper excitation radio frequency power source 10, upper adaptation 9 and inductance-coupled coil 15 form top electrode, form plasma 11 for process gas ionization in provocative reaction chamber 16.Direct current power source 14 is for providing the energy of fixed wafer 3 and pallet 8.Lower exciting power source 12 is connected to chuck 6 by lower adaptation 11, and lower excitation radio frequency power source 12, lower adaptation 11 and chuck 6 form bottom electrode, for producing DC auto-bias on wafer 3 surface, attracts plasma, to carry out processing process to wafer 3 surface.Excitation radio frequency power source 13 and direct current power source 24 also can be placed in reaction chamber 20.
Chuck 6 comprises chuck body and insulating barrier, and chuck body is as chuck electrode (or claiming chuck electrode for electrostatic attraction), and it adopts the electric conducting materials such as metal to make, as copper, aluminium.Insulating barrier is made by insulating material, as quartz, pottery or metal oxide, and the outer surface of its coated chuck body.Insulating barrier can be formed at the outer surface of chuck body by modes such as spraying or anodic oxidations.Insulating barrier is to make electric insulation between chuck 6 and pallet 5, and makes electric insulation between the plasma 1 in chuck 6 and reaction chamber 16.
Pallet 5 comprises tray body and insulating barrier, the outer surface of the coated tray body of insulating barrier.Tray body is as pallet electrode (or claiming electrode for electrostatic attraction), and it adopts the electric conducting materials such as metal to make, as copper, aluminium.Insulating barrier is made by insulating material, and as quartzy, ceramic, it can be formed at conductive material surface by modes such as spraying or anodic oxidations.Insulating barrier insulate to make pallet 5, to make electric insulation between pallet 5 and chuck 6, and makes electric insulation between the plasma 10 in pallet 5 and reaction chamber 16.
Pallet 5 and chuck 6 also can adopt other structure, as long as guarantee pallet 5 and chuck 6 electrically insulated from one another, simultaneously with plasma electric insulation.
In the present embodiment, direct current power source 14 is a DC power supply, and DC power supply 14 comprises cathode output end (HV+), cathode output end (HV-) and common port (or being referred to as intermediate point CT), common end grounding, or common port picks shell, then by chassics earth.Pallet electrode is electrically connected with the cathode output end of DC power supply, the direct ground connection of chuck electrode, (or by filter circuit ground connection).Certainly, pallet electrode also can be electrically connected with the cathode output end of DC power supply 14, and chuck electrode is electrically connected (common end grounding) with the common port of DC power supply 14.
It is noted that DC power supply 14 also can only comprise cathode output end and common port, or only comprise cathode output end and common port, or only comprise cathode output end and cathode output end.When DC power supply only comprises cathode output end and common port, pallet electrode is connected with cathode output end, common end grounding, chuck electrode ground connection.When DC power supply only comprises cathode output end and common port, pallet electrode and cathode output end, common end grounding, chuck electrode ground connection (or by filter circuit ground connection).When DC power supply only comprises cathode output end and cathode output end, cathode output end is electrically connected with pallet electrode, cathode output end ground connection, chuck electrode ground connection (or by filter circuit ground connection); Or cathode output end is electrically connected with pallet electrode, cathode output end ground connection, chuck electrode ground connection (or by filter circuit ground connection).
In plasma environment, one deck charge layer (i.e. so-called DC auto-bias) is formed at the machined surface upper surface of wafer (in the figure) of wafer 3, when direct current power source 14 provides energising to pallet electrode, voltage difference is there is between pallet and wafer 3, form electrostatic field, (different according to chip-type, the position that voltage difference is formed is distinguished to some extent to form the electrostatic attraction attracted each other between pallet 5 and wafer 3.When wafer back be semiconductor (such as Si) or conductor material (such as metal) time, pallet electrifying electrodes, then wafer back induces the electric charge with pallet electrode opposite polarity, and now voltage difference is the charge layer that pallet electrode and wafer back induce.When wafer back material is insulating material (such as sapphire), then voltage difference is one deck charge layer (i.e. so-called DC auto-bias) that pallet electrode and upper wafer surface are formed, and wafer 3 is fixed on the loading end of pallet 5 by this electrostatic attraction.Meanwhile, between pallet 5 and chuck 6, also produce voltage difference, form electrostatic field, form the electrostatic attraction attracted each other between pallet and chuck, pallet 5 is fixed on the loading end of chuck 6 by this electrostatic attraction.
Introduce the size of the electrostatic attraction between pallet 5 and wafer 3 and the electrostatic attraction between pallet 5 and chuck 6 below.
As shown in Figure 8, in vacuum, two pieces of direct current pole plate schematic diagrames with opposite charges, according to Coulomb's law, between two-plate, electrostatic attraction computing formula is:
Wherein,
F-electrostatic attraction;
K-insulating dielectric constants;
ε
0-permittivity of vacuum;
A-DC electrode aspect is amassed;
Voltage difference between V-DC electrode;
D-DC electrode spacing.
Pallet electrode is communicated with the cathode output end (HV-) of DC power supply 14, if E is that DC power supply 14 cathode output end (HV-) is to the magnitude of voltage of direct voltage intermediate point, because intermediate point (CT) picks shell, chassics earth, so DC power supply 14 cathode output end (HV-) magnitude of voltage is over the ground E, and the magnitude of voltage of pallet electrode (GND) or casing over the ground is equally also E.
For the wafer that wafer back is semiconductor, conductor material, after pallet electrifying electrodes, wafer back induces charge layer, wafer back charge layer over the ground or the magnitude of voltage of casing be set to E
1, between pallet electrode and wafer charge layer, insulation distance is set to d
1, the equivalent capacitance value that pallet electrode and wafer are formed is set to C
1, then, according to the formula of above-mentioned calculating electrostatic attraction, the electrostatic attraction between wafer 3 and pallet 5 is:
Be the wafer of insulating material for wafer back, after plasma starter, charge layer will be formed in upper wafer surface, i.e. DC auto-bias, this charge layer over the ground or the magnitude of voltage of casing be set to E
2, between pallet electrode and wafer charge layer, insulation distance is set to d
2the equivalent capacitance value that pallet electrode and wafer are formed is set to C
2.Then, according to the formula of above-mentioned calculating electrostatic attraction, the electrostatic attraction between wafer 3 and pallet 5 is:
In addition, relative to DC power cathode output (HV-) voltage to earth value E, the value E of DC auto-bias
2, voltage to earth value is very little, almost can ignore, and therefore, the electrostatic attraction between wafer 3 and pallet 5 can be approximated to be:
Chuck electrode is by filter circuit ground connection or the shell that picks, i.e. DC earthing, and between pallet electrode and chuck electrode, insulation distance is set to d
3, the equivalent capacitance value of pallet electrode and chuck electrode is set to C
3, then, according to above-mentioned calculating electrostatic attraction, the electrostatic attraction F between pallet 5 and chuck 6
1for:
Electrostatic adsorption force F between pallet electrode and wafer S
2for:
Between wafer 3 and pallet electrode, and between pallet electrode and chuck electrode, form two equivalent capacitys respectively, the electric capacity formed between wafer 3 and pallet electrode is referred to as the first electric capacity by us, and the electric capacity formed between pallet electrode and chuck electrode is referred to as the second electric capacity.First electric capacity and the second Capacitance parallel connection.First electric capacity and the second Capacitance parallel connection relation, make the voltage difference between chuck electrode and pallet electrode and between pallet electrode and wafer, voltage difference is all approximately equal to respectively or is greater than DC power supply 14 cathode output end (HV-) magnitude of voltage E, this magnitude of voltage method of salary distribution, also makes the electrostatic attraction between chuck electrode and pallet electrode and the electrostatic attraction between pallet electrode and wafer maximize.In other words, if obtain the electrostatic attraction of formed objects, when the first electric capacity and the second Capacitance parallel connection, the output voltage values that required DC power supply 14 provides minimizes, so namely, the voltage withstand class of chuck, pallet can be effectively reduced, reduce the design difficulty of DC power supply, and contribute to the manufacturing cost reducing plasma processing device.
A filter circuit 13a can also be connected in series between direct current power source 14 with pallet electrode, cause radio-frequency (RF) energy to decay in order to avoid radio-frequency (RF) energy to be leaked by loop, and avoid causing radio frequency interference to other device.Filter circuit 13a comprises the first inductance L 1 and the first electric capacity C1, and one end of the first inductance L 1 is connected with pallet 5 as the first output of filter circuit, and the other end is connected with the cathode output end (HV-) of DC power supply 14 as the second output of filter circuit.One end ground connection of the first electric capacity C1 or casing, the second output of the other end and filter circuit with (and) cathode output end (HV-) of direct current power source 14 is connected.A filter circuit 13b is connected in series between chuck electrode and ground or casing, filter circuit 13b is made up of inductance L 2, filter circuit 13b causes radio-frequency (RF) energy to decay in order to avoid radio-frequency (RF) energy to be leaked by loop equally, and avoids causing radio frequency interference to other device.
Filter circuit 13a also can adopt other filter circuit can avoiding radio-frequency (RF) energy decay and anti-radio frequency interference.As shown in Figure 6, filter circuit 13a comprises the first inductance L 1, second inductance L 2, first electric capacity C1 and the second electric capacity C2, wherein, the first inductance L 1 and the second inductance L 2 are connected, and the first inductance L 1 and the another one end of the second inductance L 2 are respectively as the first output of filter circuit and the second output.First electric capacity C1 and the second electric capacity C2 is in parallel, one end ground connection of the first electric capacity C1 and the second electric capacity C2, and the other end connects the second output of filter circuit.
Although list the filter circuit 13a of two kinds of structures at this, the structure of filter circuit 13a is not limited thereto.In fact, filter circuit can comprise n inductance and n electric capacity, and n is the integer of >=1.As long as be connected by the following method with electric capacity by inductance, that is, by n inductance series connection, n Capacitance parallel connection, then by n electric capacity and n inductance in parallel, and by one end ground connection of electric capacity.Certainly, filter circuit 13a can be formed by inductance, resistance and electric capacity combination in any, as adopted alternating-current resistance.As long as the filter circuit 13a that radio-frequency (RF) energy is leaked by loop can be avoided all can be applied to the present invention.In actual applications, filter circuit 13a adopts the filter circuit that can meet rf attenuation and be less than-10dB.
Filter circuit 13b also can adopt other filter circuit can avoiding radio-frequency (RF) energy decay and anti-radio frequency interference.As shown in Figure 4, filter circuit 13b comprises the first inductance L 3, second inductance L 4.Wherein, the first inductance L 3 and the second inductance L 3 are connected, and the first inductance L 1 and the another one end of the second inductance L 2 are respectively as the first output of filter circuit and the second output.
Although list the filter circuit 13b of two kinds of structures at this, the structure of filter circuit 13b is not limited thereto.In fact, filter circuit can comprise n inductance, and n is the integer of >=1.As long as just n inductance is connected in series.Certainly, filter circuit 13b can be formed by inductance, resistance combination in any, as adopted alternating-current resistance.As long as the filter circuit 13b that radio-frequency (RF) energy is leaked by loop can be avoided all can be applied to the present invention.In actual applications, filter circuit 13b adopts the filter circuit that can meet rf attenuation and be less than-10dB.
In technical process, the impact of subject plasma, the temperature of wafer 3, pallet 5 and chuck 6 easily raises and affects the quality of mask and the useful life of pallet 5 and chuck 6.Therefore, need to utilize coolant media to regulate the temperature of wafer 3, pallet 5 and chuck 6.
As shown in Figure 2, be provided with the first chuck refrigerant passage 7 for cooling chuck 6 and pallet 5 in chuck 6, in the first chuck refrigerant passage 7, pass into the first coolant media can cool chuck 6 and pallet 5.First coolant media is refrigerant liquid, as Galden (fluorine cooling fluid) liquid.
The the second chuck refrigerant passage 4b running through its thickness direction is also provided with in chuck 6, the pallet refrigerant passage 4a running through its thickness direction is also provided with in pallet 5, chuck annular groove A is provided with at the loading end (upper surface) of chuck 6, pallet annular groove B is provided with at the lower surface of pallet, pallet annular groove B is relative with the position of chuck annular groove A, and the second chuck refrigerant passage 4b is communicated with pallet refrigerant passage 4a by chuck annular groove A, pallet annular groove B.Chuck base 8 is provided with the refrigerant passage 4c running through its thickness direction, enters the entrance in cold media gas passage as cold media gas.Chuck annular groove D is provided with at the lower surface of chuck, annular groove C is provided with at chuck base upper surface, chuck annular groove D is relative with the position of base annular groove C, and the second chuck refrigerant passage 4b is communicated with chuck base refrigerant passage 4c by chuck annular groove D, base annular groove C.
Second coolant media is successively via chuck base refrigerant passage 4c, chuck base annular groove C, chuck annular groove D, the second chuck refrigerant passage 4b, chuck annular groove A, pallet annular groove B and pallet refrigerant passage 4a, finally be transported to the back side of wafer 3, wafer 3 is cooled.Second coolant media is cold media gas, as inert gases such as helium.
Preferably, multiple the second chuck refrigerant passage 4b be communicated with chuck annular groove A is provided with in chuck 6, multiple pallet refrigerant passage 4a is provided with in pallet 5, multiple second chuck refrigerant passage 4b and pallet refrigerant passage 4a not only can regulate temperature effectively, and can improve the uniformity of temperature.
When wafer 3 is placed in the loading end of pallet 5, the loading end of pallet 5 can not block by wafer 3 completely.In technical process, the loading end of the pallet 5 do not blocked by wafer S can be etched by plasma 1, affects the useful life of pallet 5.For this reason, plasma processing device also comprises the cover plate 2 of pottery or quartz material, and cover plate 2 is provided with the location hole 2a running through cover sheet thickness, and each location hole 2a can place a wafer 3.Cover plate 2 is stacked and placed on the loading end of pallet 5, and is fixed by screw (not shown) and pallet 5, and screw adopts quartz or ceramic material equally.Wafer 3 is embedded at location hole 2a, and the machined surface of wafer 3 is exposed in plasma by location hole 2a.Therefore the location hole 2a be arranged on cover plate 2 is conducive to the efficiency of loading improving wafer 3.Be understood that, the internal diameter size of location hole 2a equals or slightly larger than the outside dimension of wafer 3.Preferably, the outside dimension of cover plate 2 equals or slightly larger than the outside dimension of pallet 5, can by exposed pallet 5 partial occlusion in plasma 1, thus avoid plasma 1 to etch pallet 5 like this.
Also be provided with boss 5a at the loading end of pallet 5, boss 5a is relative with location hole 2a, and wafer 3 is placed on the top of boss 5a.In order to make pallet 5 can carry multiple wafer 3, be provided with multiple boss 5a at the loading end of pallet 5, accordingly, arrange multiple location hole 2a in cover plate, the quantity of location hole 2a is equal with the quantity of boss 5a.
Preferably, the diameter of pallet 5 lower surface equals or slightly larger than the diameter of chuck 6 loading end, namely the size of the lower surface of pallet 5 is not less than the size of the loading end of chuck 6, to make positiver sealing between pallet 5 and chuck 6, and prevents the loading end of plasma damage chuck 6.
As shown in Figure 2, top electrode comprises inductance-coupled coil 15, and inductance-coupled coil is arranged on the top of medium window 17, and medium window 17 is arranged on the top of reaction chamber 16.Medium window 17 adopts quartz or ceramic material.Inductance-coupled coil is connected with upper excitation radio frequency power source 10 by upper adaptation 9, and lower bias voltage radio frequency power source 12 is by lower adaptation 11 and chuck 6, and namely chuck 6 current-carrying part is electrically connected.
It is pointed out that excitation radio frequency power source 10 and lower excitation radio frequency power source 12 are two separate radio-frequency power supplies.But the present invention is not limited thereto, upper excitation radio frequency power source 10 and lower excitation radio frequency power source 12 also can share a radio-frequency power supply and obtain, and namely produce two independently radio-frequency power outputs by a radio-frequency power supply.
The plasma processing device that above-described embodiment provides can as ICP dry plasma etch machine, the etching of particularly suitable graphical sapphire substrate (PSS-PatternedSaphireSubstrate); Or as ITO(indium tin oxide) Pvd equipment, for the preparation of ito thin film.
In order to improve the working (machining) efficiency of plasma processing device, pallet 5 can arrange multiple wafer 3 usually.The loading end of pallet 5 arranges multiple boss 5a, cover plate 2 is provided with the location hole 2a equally equal with wafer 3 quantity, and the setting position of location hole 2a is relative with the position of boss 5a.During use, the corresponding wafer 3 of each boss 5a, the corresponding wafer 3 of each location hole 2a.
Fig. 4 is the structural representation of yet another embodiment of the invention plasma processing device.As shown in Figure 4, in the present embodiment, DC power supply 14 comprises the first DC power supply 14a and the second DC power supply 14b, and the first DC power supply 14a and the second DC power supply 14b comprises cathode output end (HV+), cathode output end (HV-) and common port (CT) respectively.Wherein, pallet electrode is electrically connected with the cathode output end (HV-) of the first DC power supply `14a, common port (CT) ground connection of the first DC power supply 14a.Chuck electrode is electrically connected with the cathode output end (HV-) of the second DC power supply 14b, common port (CT) ground connection of the second DC power supply 14b.Or pallet electrode is electrically connected with the cathode output end (HV+) of the first DC power supply 14a, common port (CT) ground connection of the first DC power supply 14a.Cathode output end (HV+) or the cathode output end (HV-) of chuck electrode and the second DC power supply 14b are electrically connected, common port (CT) ground connection of the second DC power supply 14b.The structural design of this two dc power supply, as long as control the value that two power supply DC power supply export respectively, ensure pallet electrode and wafer, between pallet electrode and chuck electrode, there is certain voltage difference, electrostatic attraction can be produced between pallet and wafer, between pallet and chuck.
The first filter circuit 13a is provided with between pallet electrode and the first DC power supply 14a, the second filter circuit 13b is connected in series between chuck electrode with the second DC power supply 14b, first filter circuit 13a and the second filter circuit 13b can avoid radio-frequency (RF) energy leaked by loop and cause radio-frequency (RF) energy to decay, and avoids causing radio frequency interference to other device.The filter circuit of other structure that the first filter circuit 14a and the second filter circuit 13b can adopt above-described embodiment to introduce equally.The modular construction that the structure of the present embodiment other parts NM is corresponding with above-described embodiment is identical, all may be used for the present embodiment and uses, do not repeat them here.
The plasma processing device that above-described embodiment provides, pallet electrode is provided with in pallet, chuck electrode is provided with in chuck, between described pallet electrode and described chuck electrode and between described pallet electrode and described wafer, voltage difference is produced respectively by DC power supply, voltage difference between pallet electrode and described chuck electrode makes to produce electrostatic attraction between pallet and chuck, thus pallet is fixed on the loading end of chuck; Voltage difference between pallet electrode and described wafer makes to produce electrostatic attraction between pallet and wafer, thus wafer is fixed on the loading end of pallet; That is, by Electrostatic Absorption mode, wafer and pallet are individually fixed in pallet and chuck, avoid using mechanical pressure ring, first simplicity of design, simplifies the structure, and reduces the manufacturing cost of plasma processing device; Secondly simple to operate, the working (machining) efficiency of plasma processing device can be improved; Reliability is high again, not fragile, reduces maintenance cost, can improve the utilization rate of plasma processing device.In addition, adopt Electrostatic Absorption mode fixed wafer and pallet, can effectively avoid leaking of cold media gas, thus the temperature of wafer is effectively managed.In addition, described first electric capacity and described second Capacitance parallel connection, the power of DC power supply can be effectively utilized, the electrostatic attraction between pallet and wafer and the electrostatic attraction between pallet and chuck can be made to maximize, improve the adsorption effect of wafer and pallet on the one hand, wafer and pallet are fixed better, prevents leaking of cold media gas; On the other hand, produce the electrostatic attraction of formed objects, need the voltage minimization that DC power supply provides, thus reduce the voltage withstand class of pallet and chuck, and then reduce the cost of pallet and chuck.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (30)
1. a plasma processing device, comprises reaction chamber, upper excitation radio frequency power source, direct current power source and wafer support, and described upper excitation radio frequency power source produces the energy of plasma in order to provide;
Described wafer support is located in described reaction chamber, and it comprises for the pallet of bearing wafer and the chuck for carrying described pallet;
It is characterized in that, pallet electrode is provided with in described pallet, described chuck electrode ground connection, chuck electrode is provided with in described chuck, described pallet and described chuck electrically insulated from one another, and with plasma electric insulation, described direct current power source in order to produce voltage difference respectively between described pallet electrode and described chuck electrode and between described pallet electrode and described wafer; And the first electric capacity is formed between described wafer and described pallet electrode, between described pallet electrode and described chuck electrode, form the second electric capacity, described first electric capacity and described second Capacitance parallel connection, thus pallet is fixed on the upper surface of chuck.
2. plasma processing device according to claim 1, it is characterized in that, described direct current power source comprises a DC power supply, and described DC power supply comprises cathode output end and cathode output end, described cathode output end is electrically connected with described pallet electrode, described cathode output end ground connection; Or described cathode output end is electrically connected with described pallet electrode, described cathode output end ground connection.
3. plasma processing device according to claim 1, it is characterized in that, described direct current power source comprises a DC power supply, described DC power supply comprises cathode output end, cathode output end and common port, described pallet electrode is electrically connected with the cathode output end of described DC power supply or the cathode output end of described DC power supply, described common end grounding.
4. plasma processing device according to claim 1, it is characterized in that, described direct current power source comprises a DC power supply, and described DC power supply comprises cathode output end and common port, described cathode output end is electrically connected with described pallet electrode, described common end grounding;
Or described DC power supply comprises cathode output end and common port, cathode output end is electrically connected with described pallet electrode, described common end grounding.
5. the plasma processing device according to claim 2-4 any one, is characterized in that, between described pallet electrode and described DC power supply, be serially connected with filter circuit.
6. plasma processing device according to claim 5, is characterized in that, described filter circuit is alternating-current resistance.
7. plasma processing device according to claim 5, is characterized in that, described filter circuit is the filter circuit that rf attenuation is less than-10dB.
8. plasma processing device according to claim 7, is characterized in that, described filter circuit comprises n inductance and n electric capacity, n described inductance series connection, n described Capacitance parallel connection, described electric capacity and described inductance in parallel, and one end ground connection of described electric capacity, the integer of n >=1.
9. plasma processing device according to claim 1, it is characterized in that, described direct current power source comprises the first DC power supply and the second DC power supply, described first DC power supply and described second DC power supply comprise cathode output end separately, cathode output end and common port, cathode output end or the cathode output end of described pallet electrode and described first DC power supply are electrically connected, cathode output end or the cathode output end of described chuck electrode and described second DC power supply are electrically connected, the common port of described first DC power supply and the equal ground connection of common port of described second DC power supply.
10. plasma processing device according to claim 9, is characterized in that, between described pallet electrode and described direct current power source and between described chuck electrode and described direct current power source, be serially connected with filter circuit respectively.
11. plasma processing devices according to claim 10, is characterized in that, described filter circuit is alternating-current resistance.
12. plasma processing devices according to claim 10, is characterized in that, described filter circuit is the filter circuit that rf attenuation is less than-10dB.
13. plasma processing devices according to claim 12, is characterized in that, described filter circuit comprises n inductance and n electric capacity, n described inductance series connection, n described Capacitance parallel connection, described electric capacity and described inductance in parallel, and one end ground connection of described electric capacity, the integer of n >=1.
14. plasma processing devices according to claim 1, it is characterized in that, described pallet comprises tray body and insulating barrier, and described tray body adopts electric conducting material to make, the outer surface of the coated described tray body of described insulating barrier, described tray body is as described pallet electrode;
Described chuck comprises chuck body and insulating barrier, and described chuck body adopts electric conducting material to make, and the outer surface of the coated described chuck body of described insulating barrier, described chuck body is as described chuck electrode.
15. plasma processing devices according to claim 14, is characterized in that, described insulating barrier is for obtain by sprays insulating material mode; Or the alundum (Al2O3) layer for being obtained by anodic oxidation mode.
16. plasma processing devices according to claim 15, is characterized in that, described insulating material comprises quartz or ceramic or metal oxide.
17. plasma processing devices according to claim 1, is characterized in that, are provided with the first chuck refrigerant passage in described chuck, and the first coolant media cools described chuck by described first chuck refrigerant passage.
18. plasma processing devices according to claim 17, is characterized in that, described first coolant media is refrigerant liquid.
19. plasma processing devices according to claim 18, is characterized in that, described refrigerant liquid is fluorine cooling fluid.
20. plasma processing devices according to claim 1, it is characterized in that, the the second chuck refrigerant passage running through its thickness direction is also provided with in described chuck, be provided with chuck annular groove at the loading end of described chuck, described chuck annular groove is communicated with described second chuck refrigerant passage;
The pallet refrigerant passage running through its thickness direction is provided with in described pallet, pallet annular groove is provided with at the lower surface of described pallet, described pallet annular groove is relative with the position of described chuck annular groove, and described pallet refrigerant passage is communicated with described chuck annular groove, second coolant media is supplied to the back side of wafer successively via the second chuck refrigerant passage, chuck annular groove, pallet annular groove and pallet refrigerant passage, to cool wafer.
21. plasma processing devices according to claim 20, is characterized in that, described second coolant media is cold media gas.
22. plasma processing devices according to claim 21, is characterized in that, described cold media gas is helium.
23. plasma processing devices according to claim 1, is characterized in that, the size of the lower surface of described pallet is not less than the size of the loading end of described chuck.
24. plasma processing devices according to claim 1, it is characterized in that, be provided with medium window at the top of described reaction chamber, top electrode comprises inductance-coupled coil, described inductance-coupled coil is located at the top of described medium window.
25. plasma processing devices according to claim 1, it is characterized in that, comprise lower radio frequency power source, described lower radio frequency power source is connected with described chuck electrode, in order to produce DC auto-bias in wafer surface, to attract plasma, processing process is carried out to wafer surface.
26. plasma processing devices according to claim 25, is characterized in that, described upper excitation radio frequency power source and described lower radio frequency power source are two independently radio-frequency power supplies, or two that are exported by radio-frequency power supply independently radio-frequency powers.
27. plasma processing devices according to claim 1, it is characterized in that, the loading end of described pallet is provided with boss, described wafer is placed in the top of described boss;
Also comprise cover plate, described cover plate is stacked and placed on the loading end of described pallet, and described cover plate is provided with location hole, and described location hole is relative with the position of described boss, and the machined surface of described wafer is exposed to described plasma by described location hole.
28. plasma processing devices according to claim 27, is characterized in that, described cover plate adopts quartz or ceramic material.
29. plasma processing devices according to claim 1, is characterized in that, described plasma processing device is ICP plasma dry etchers or ITO Pvd equipment.
30. plasma processing devices according to claim 1, is characterized in that, the material of described wafer is sapphire, silicon or silica.
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| PE20170722A1 (en) * | 2014-04-08 | 2017-07-04 | Plasma Igniter Inc | DOUBLE SIGNAL COAXIAL CAVITY RESONATOR PLASMA GENERATION |
| US9355776B2 (en) * | 2014-04-09 | 2016-05-31 | Applied Materials, Inc. | Capacitor assemblies for coupling radio frequency (RF) and direct current (DC) energy to one or more common electrodes |
| CN105088167B (en) * | 2014-05-20 | 2018-01-09 | 北京北方华创微电子装备有限公司 | Bogey, reaction chamber and semiconductor processing equipment |
| CN106531679B (en) * | 2015-09-10 | 2019-10-08 | 北京北方华创微电子装备有限公司 | Bogey and reaction chamber |
| CN106548969B (en) * | 2015-09-22 | 2019-08-23 | 北京北方华创微电子装备有限公司 | Clamping device and semiconductor processing equipment |
| US11183412B2 (en) * | 2017-08-14 | 2021-11-23 | Watlow Electric Manufacturing Company | Method for joining quartz pieces and quartz electrodes and other devices of joined quartz |
| CN110416144B (en) * | 2018-04-27 | 2020-11-10 | 北京北方华创微电子装备有限公司 | Electrostatic chuck, process chamber and semiconductor processing equipment |
| CN110491819B (en) * | 2018-05-14 | 2021-11-12 | 北京北方华创微电子装备有限公司 | Method for balancing electrostatic force and electrostatic chuck |
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| JP2004319972A (en) * | 2003-03-31 | 2004-11-11 | Tokyo Electron Ltd | Etching method and etching device |
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| TW201407714A (en) | 2014-02-16 |
| TWI521639B (en) | 2016-02-11 |
| CN103594315A (en) | 2014-02-19 |
| WO2014026593A1 (en) | 2014-02-20 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |