CN100517560C - Gas injection device - Google Patents
Gas injection device Download PDFInfo
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- CN100517560C CN100517560C CNB2006101133345A CN200610113334A CN100517560C CN 100517560 C CN100517560 C CN 100517560C CN B2006101133345 A CNB2006101133345 A CN B2006101133345A CN 200610113334 A CN200610113334 A CN 200610113334A CN 100517560 C CN100517560 C CN 100517560C
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- gas passage
- injection apparatus
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Abstract
This invention discloses a gas injection device used in supplying gas to the reaction chamber of an inductance coupling plasma device including a nozzle with a middle part gas channel set and a surrounding gas channel set used in providing gas to the middle and surrounding regions of the reaction chamber, each set of channels is set with an independent flow control device used in controlling the gas flow of said channels, the top of the nozzle is set with a test device for testing the reaction state of the gas in the chamber.
Description
Technical field
The present invention relates to a kind of gas distributed system, relate in particular to a kind of feeder of semi-conductor silicon chip process equipment.
Background technology
In the semiconductor wafer course of processing, process gas injects reaction chamber and diffusion by gas injection apparatus, produces plasma and come etching to be positioned at the wafer surface of chamber interior under the high-frequency electric field effect.In reaction chamber inside,, will cause etch rate and uniformity on the wafer surface of chamber interior that bigger variation is arranged if distribution of gas is inhomogeneous.Along with technological progress, the volume of reaction chamber also increases accordingly at present, and this makes even distribution of gas in the reaction chamber become difficult more, and therefore design can obtain the gas injection apparatus of uniform gas distribution, seems very important.
At present, in the process gas injected system that adopts in the semiconductor etching device, process gas distributes in order to obtain comparatively uniformly in reaction chamber, and the gas injection apparatus of various structures is arranged:
As shown in Figure 1, be the nozzle arrangements of one of process gas injection device commonly used in the semiconductor etching device.In order to obtain uniform distribution of gas, a simple gas injection inlet is not enough.The gas blowing part 100 of this nozzle arrangements comprises a plurality of holes 110, and the longitudinal axis in hole has improved the uniformity of injecting gas to a certain extent from the horizontal by predetermined angular.But, cause the improvement of distribution of gas still not enough because this device lacks the control to the gas injection zone.
As shown in Figure 2, be two of the process gas injection device that adopts in the semiconductor etching device.This apparatus structure is simple, nozzle 1 is fixed on the upper cover plate of reaction chamber, be divided into many inlet channels 10,11, and inlet channel 11 is positioned on the longitudinal axis of injection device, process gas flows into corresponding nozzle air inlet after being divided into multichannel, realization is injected the multi-region of chamber, has promoted the uniformity that injecting gas distributes.
But this device just depending nozzle directly injects reaction chamber to process gas, and emphasizes to have a gas outlet to be positioned on the nozzle centre axis, is unfavorable for the position of flexible distributed gas outlet and enlarges the direct area coverage of inlet.The area that makes gas injection port directly cover is too little, and the distributing homogeneity of injected gas is restricted.
And existing gas injection apparatus all can not be realized the effect of gas reaction in the reaction chamber is detected.
Summary of the invention
The purpose of this invention is to provide that the area that a kind of simple in structure, gas injection covers is big, distribution of gas is even, and can realize the gas injection apparatus that the effect to gas reaction in the reaction chamber detects.
The objective of the invention is to be achieved through the following technical solutions:
Gas injection apparatus of the present invention, be used for comprising nozzle to the reaction chamber air feed, described nozzle is provided with the gas passage that at least two groups communicate with reaction chamber, every group of gas passage is respectively equipped with independent volume control device, is used to control the gas flow of this group gas passage.
Described gas injection apparatus also comprises checkout gear, and described checkout gear is located at the top of nozzle, and communicates with reaction chamber by sense channel, is used for the reactiveness of gas in the detection reaction chamber.
Described at least two group gas passages comprise central gas channel group and peripheral gas channel group, and described central gas channel group comprises one or more central gas passage, are located near the central axis of nozzle; Described peripheral gas channel group comprises one or more peripheral gas passage, is located at the position away from nozzle centre axis.
The central axis of described central gas passage and nozzle be arranged in parallel;
Described sense channel is one or more of a central gas passage, and perhaps, described sense channel is located at the central axis position of nozzle separately, and parallel with the central axis of nozzle.
The direction of described central gas passage gas outlet and the angle of nozzle centre axis are 0 °～45 °.
The direction of described peripheral gas passage gas outlet and the angle of nozzle centre axis are 10 °～90 °.
The direction of described peripheral gas passage gas outlet and the angle of nozzle centre axis are 30 °～60 °.
Described sense channel is located at the central axis position of nozzle separately, and parallel with the central axis of nozzle.
The sectional area of the gas outlet of described gas passage is less than the sectional area at gas passage middle part.
As seen from the above technical solution provided by the invention, gas injection apparatus of the present invention, because nozzle is provided with the gas passage that at least two groups communicate with reaction chamber, every group of gas passage is respectively equipped with independent volume control device, be used to control the gas flow of this group gas passage, can realize reaction chamber is carried out the multi-region air feed, and subregion control.
Owing to comprise central gas channel group and peripheral gas channel group, the central gas channel group is located near the central axis of nozzle again; The peripheral gas channel group is located at the position away from nozzle centre axis.Can realize the central region of reaction chamber and the air feed of neighboring area are controlled respectively; And because every group comprise many gas passages, the area that the gas injection covers is big, distribution of gas is even.
Top owing to nozzle is provided with checkout gear again, and communicates with reaction chamber by sense channel, very easily the reactiveness of gas in the detection reaction chamber.
Because the sectional area of the gas outlet of gas passage less than the sectional area at gas passage middle part, makes gas increase at place, gas outlet gas flow rate, shorten the time of contact between the wall of gas and gas outlet, and can suppress entering of electric arc again.
The present invention is simple in structure, be particularly useful for also being applicable to the air feed of other occasion in the air supply system of semi-conductor silicon chip process equipment.
Description of drawings
Fig. 1 is the structural representation of the gas injection apparatus of prior art one;
Fig. 2 is the structural representation of the gas injection apparatus of prior art two;
Fig. 3 is the structural representation of gas injection apparatus specific embodiment one of the present invention;
Fig. 4 is the structural representation of gas injection apparatus specific embodiment two of the present invention.
Embodiment
Gas injection apparatus of the present invention is used for to the reaction chamber air feed.Described reaction chamber can be the reaction chamber of inductance coupled plasma device, also can be the reaction chamber of other semiconductor processing equipment, or other cavity.
Its preferable specific embodiment one as shown in Figure 3, comprises nozzle 1, and nozzle 1 is provided with two groups of gas passages that communicate with reaction chamber, and every group of gas passage is respectively equipped with independent volume control device 5, is used to control the gas flow of this group gas passage.Also can be provided with many group gas passages as required.
In two groups of gas passages, one group of close nozzle 1 central axis is called the central gas channel group, comprises one or more central gas passage 3, is generally 3 to 9 the bests, is located near the central axis of nozzle 1, is used to the central region air feed of reaction chamber.
Other one group of gas passage is located at the position away from nozzle 1 central axis, is called the peripheral gas channel group, comprises one or more peripheral gas passage 2, is generally more than 3, is used to the neighboring area air feed of reaction chamber.
Top at nozzle 1 also is provided with checkout gear 6, and communicates with reaction chamber by sense channel, is used for the reactiveness of gas in the detection reaction chamber.Described sense channel can be used one or more in the central gas passage 3.At this moment, preferably be arranged in parallel, can detect the reactiveness of the gas in the middle part of the reaction chamber like this with the central axis of nozzle as the central gas passage 3 of sense channel.Certainly, the reactiveness of the gas of detection reaction chamber periphery also can be selected for use and the uneven gas passage of the central axis of nozzle 1 if desired.And what this moment will be with as the diameter design of the central gas passage 3 of sense channel is big, so that detect.
The specific embodiment two that the present invention is preferable as shown in Figure 4, is provided with special-purpose sense channel 4, is located at the central axis position of nozzle 1, and parallel with the central axis of nozzle 1.Can not influence the layout of gas passage like this, and the design of the shape of gas passage and diameter.
The direction of the gas outlet of described central gas passage 3 is general parallel with the central axis of nozzle 1 better, also can be 0 °～45 ° angle as required.
10 °～90 ° angle will be arranged between the central axis of the direction of the gas outlet of described peripheral gas passage 2 and nozzle 1, be generally 30 °～60 ° preferable.
The sectional area of the gas outlet of gas passage of the present invention makes gas increase at place, gas outlet gas flow rate less than the sectional area at gas passage middle part, and shorten the time of contact between the wall of gas and gas outlet, and can suppress entering of electric arc.
Among the present invention, central gas passage 3 is not limited on the central shaft position of nozzle, can adjust position, angle, shape and quantity as required.In addition, among the present invention, the description that specific embodiment is done is just in order to explain invention, and invention scope is not limited by these embodiment.
The present invention is particularly useful for also being applicable to the air feed of other occasion in the air supply system of semi-conductor silicon chip process equipment.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (8)
1, a kind of gas injection apparatus is used for comprising nozzle to the reaction chamber air feed, it is characterized in that, described nozzle is provided with the gas passage that at least two groups communicate with reaction chamber, and every group of gas passage is respectively equipped with independent volume control device, is used to control the gas flow of this group gas passage;
This gas injection apparatus also comprises checkout gear, and described checkout gear is located at the top of nozzle, and communicates with reaction chamber by sense channel, is used for the reactiveness of gas in the detection reaction chamber.
2, gas injection apparatus according to claim 1, it is characterized in that, described at least two group gas passages comprise central gas channel group and peripheral gas channel group, and described central gas channel group comprises one or more central gas passage, are located near the central axis of nozzle; Described peripheral gas channel group comprises one or more peripheral gas passage, is located at the position away from nozzle centre axis.
3, gas injection apparatus according to claim 2 is characterized in that:
The central axis of described central gas passage and nozzle be arranged in parallel;
Described sense channel is one or more of a central gas passage, and perhaps, described sense channel is located at the central axis position of nozzle separately, and parallel with the central axis of nozzle.
4, gas injection apparatus according to claim 2 is characterized in that, the angle of the direction of the gas outlet of described central gas passage and the central axis of nozzle is 0 °～45 °.
5, gas injection apparatus according to claim 2 is characterized in that, the angle of the direction of the gas outlet of described peripheral gas passage and the central axis of nozzle is 10 °～90 °.
6, gas injection apparatus according to claim 5 is characterized in that, the angle of the direction of the gas outlet of described peripheral gas passage and the central axis of nozzle is 30 °～60 °.
7, gas injection apparatus according to claim 1 is characterized in that, described sense channel is located at the central axis position of nozzle separately, and parallel with the central axis of nozzle.
8, gas injection apparatus according to claim 1 is characterized in that, the sectional area of the gas outlet of described gas passage is less than the sectional area at gas passage middle part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101133345A CN100517560C (en) | 2006-09-22 | 2006-09-22 | Gas injection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101133345A CN100517560C (en) | 2006-09-22 | 2006-09-22 | Gas injection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101150039A CN101150039A (en) | 2008-03-26 |
| CN100517560C true CN100517560C (en) | 2009-07-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101133345A Active CN100517560C (en) | 2006-09-22 | 2006-09-22 | Gas injection device |
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| CN (1) | CN100517560C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101585019B (en) * | 2008-05-19 | 2013-03-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing device and nozzle structure used in same |
| CN101623680A (en) * | 2008-07-09 | 2010-01-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air inlet device and semiconductor processing equipment using same |
| CN102373439B (en) * | 2010-08-24 | 2014-02-05 | 上海博恩世通光电股份有限公司 | Chemical deposition reactor and spraying device thereof |
| CN106206225B (en) * | 2016-07-29 | 2018-01-26 | 上海华力微电子有限公司 | Prevent the method and high-density plasma machine that tip nozzles ftracture |
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2006
- 2006-09-22 CN CNB2006101133345A patent/CN100517560C/en active Active
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| Publication number | Publication date |
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| CN101150039A (en) | 2008-03-26 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |