CN102373439B - Chemical deposition reactor and spraying device thereof - Google Patents
Chemical deposition reactor and spraying device thereof Download PDFInfo
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- CN102373439B CN102373439B CN201010264060.6A CN201010264060A CN102373439B CN 102373439 B CN102373439 B CN 102373439B CN 201010264060 A CN201010264060 A CN 201010264060A CN 102373439 B CN102373439 B CN 102373439B
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- flusher
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Abstract
The invention discloses a chemical deposition reactor and a spraying device thereof. The spraying device comprises a plurality of gas conveying units for respectively conveying different gases. At least one of the gas conveying units comprises a gas conveying passage arranged at the center of the spraying device. One end of the gas conveying passage is provided with a gas inlet. The other end of the gas conveying passage is provided with a gas distribution plate. The gas distribution plate is provided with a plurality of through holes. Gases flowing through the gas conveying passage outflows from the through holes. The apertures of the through holes at the lateral surface of the gas distribution plate are less than the apertures of the through holes at the middle part of the gas distribution plate. The through holes at the lateral surface of the gas distribution plate are slantingly arranged. In the invention, the number of sealed positions is decreased by decreasing the number of gas holes of a shower head, so that compared with original welding positions, welding positions are greatly reduced. The spraying device has a simple structure and has low fault probability in the using process. The maintenance cost can be effectively reduced.
Description
Technical field
The invention belongs to semiconductor manufacturing facility technical field, relate to a kind of electroless plating reactor, relate in particular to a kind of flusher of electroless plating reactor.
Background technology
The reactor using in existing electroless plating device is supply response raw material film former on semiconductor substrate simultaneously.It is more that the unstripped gas of supplying with on electroless plating substrate flows to from the top down, at this moment for unstripped gas can smooth and easyly be supplied on substrate.Between gas inflow entrance and substrate, use flusher Shower Head.
Existing Shower Head structure is more complicated, as shown in Figure 1 and Figure 2.From Fig. 1, can find out in each reactant gases 11,12 gas phases and not mix, by gas panel 1,2,3, independently flow into Shower Head.Meanwhile, each gas flows 21,22 from flowing out below by each separated film formed aperture under separated state.Now, each gas, under not mixed state, is supplied on substrate 13,16 uniformly by Shower Head chassis 4 equally distributed apertures.In addition, the Shower Head lowest layer is to be risen and carried out provide protection by input water coolant; As shown in Figure 1, water coolant flows into from entrance 18, from exporting 19 outflows.Use the depositional mode of existing Shower Head, the homogeneity of the thickness of the film of the deposition of small area is extraordinary, but while making large-area Shower Head, making itself is very difficult.
Shower Head have so the reason of complex structure be under the not mixed state of each gas on substrate film former.Meanwhile, because general thin generation time substrate temperature is very high, by water coolant, Shower Head is carried out to cooling protection effect, so structure is very complicated.In addition, each gas is not mixed in Shower Head, and the gas separation membrane 2,3 of air shooter 21,22 seals completely by sealing unit 30.The position of dividing by the Shower Head bottom of water coolant seals by sealing unit 32, with preventing water leakage.The gas of all participations reaction is completely separated not mixed in Shower Head with water coolant, and the aperture by bottom is supplied on substrate uniformly.
But the Shower Head making like this has following shortcoming: in order to boost productivity, make the pore quantity that large-area Shower Head certainly will will increase gas delivery layer 2,3,4.Also just increase the intensity of the air seal of each gas delivery layer.Nearly 1000 degree of the temperature of substrate during deposit film, even if come coolingly by water coolant, the sealing position bottom Shower Head also can often be leaked by the impact of high temperature.In addition, also many because sealing position all too even if large-area Shower Head seals completely, even there is a part to be subject to thermal shocking, also must discards and can not use.Therefore, how to reduce number of seals and become the most significant problems of making big area Shower Head.
Summary of the invention
Technical problem to be solved by this invention is: a kind of flusher of electroless plating reactor is provided, can reduces the quantity of pore, make it be easy to make the feature of large-area Shower Head.
In addition, the present invention further provides a kind of electroless plating reactor that comprises above-mentioned flusher, can reduce the quantity of pore, make it be easy to make the feature of large-area Shower Head.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A flusher for electroless plating reactor, described flusher comprises some gas transport unit, in order to input respectively different gas; In described some gas transport unit, have at least a gas transport unit to comprise a gas delivery channels, one end of this gas delivery channels is gas inlet, and the other end is pneumatic outlet.
As a preferred embodiment of the present invention, the gas outlet of described gas delivery channels arranges gas panel; Described gas panel arranges a plurality of through holes, and the gas of the described gas delivery channels of flowing through flows out by described through hole.
As a preferred embodiment of the present invention, the aperture of the aperture ratio gas panel middle through-hole of described gas panel side through hole is little, and the through hole of gas panel side is obliquely installed.
As a preferred embodiment of the present invention, the gas delivery channels of described gas transport unit is arranged at the middle section of flusher; Gas inlet is arranged at one end, top of gas delivery channels, and pneumatic outlet is arranged at one end, bottom of gas delivery channels.
As a preferred embodiment of the present invention, some gas transport unit of described flusher comprise respectively a gas delivery channels, and one end of this gas delivery channels is gas inlet, and the other end is pneumatic outlet; The gas outlet of described gas delivery channels arranges gas panel; Described gas panel arranges a plurality of through holes, and the gas of the described gas delivery channels of flowing through flows out by described through hole; The aperture of the aperture ratio gas panel middle through-hole of described gas panel side through hole is little, and the through hole of gas panel side is obliquely installed.
As a preferred embodiment of the present invention, the gas delivery channels of each gas transport unit is arranged at the central region of flusher, and each gas delivery channels space arranges.
As a preferred embodiment of the present invention, through hole and the gas delivery channels at described gas panel middle part be arranged in parallel; Each through hole of described gas panel side is divergent shape, is set angle with the axis of gas delivery channels, between 10 °-80 °.
A flusher for electroless plating reactor, described flusher comprises some gas transport unit, in order to input respectively different gas; In described some gas transport unit, have a gas transport unit to comprise to be arranged on the gas delivery channels of described flusher central authorities at least, one end of this gas delivery channels is gas inlet, and the other end arranges gas panel; Described gas panel arranges a plurality of through holes, and the gas of the described gas delivery channels of flowing through flows out by described through hole; The aperture of the aperture ratio gas panel middle through-hole of gas panel side through hole is little, and the through hole of gas panel side is obliquely installed.
As a preferred embodiment of the present invention, some gas transport unit of described flusher comprise respectively a gas delivery channels, and one end of this gas delivery channels is gas inlet, and the other end is pneumatic outlet; The gas outlet of described gas delivery channels arranges gas panel; Described gas panel arranges a plurality of through holes, and the gas of the described gas delivery channels of flowing through flows out by described through hole; The aperture of the aperture ratio gas panel middle through-hole of described gas panel side through hole is little, and the through hole of gas panel side is obliquely installed.Described flusher arranges water coolant transfer passage below each gas transport unit, and described gas transport unit, the sealing of water coolant transfer passage arrange.
A reactor, described electroless plating reactor comprises above-mentioned flusher.
Beneficial effect of the present invention is: electroless plating reactor and flusher thereof that the present invention proposes, the structure of transformation Shower Head is accomplished the simplification of making processes.The pore quantity that the present invention has reduced Shower Head reduces the quantity at sealing position, so weld is fewer a lot of than original, its simple structure, and in use, out of order probability is little, can effectively reduce maintenance cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing flusher.
Fig. 2 is the structural representation of existing flusher bottom surface gas inlet/outlet.
Fig. 3 is the structural representation of flusher of the present invention.
Fig. 4 is the side-view of gas panel.
Fig. 5 is the vertical view of gas panel.
Embodiment
Below in conjunction with accompanying drawing, describe the preferred embodiments of the present invention in detail.
Embodiment mono-
Refer to Fig. 3, the present invention has disclosed electroless plating reactor and flusher Shower Head thereof.The flusher of described electroless plating reactor comprises some gas transport unit, in order to input respectively different gas.Described flusher arranges water coolant transfer passage below each gas transport unit, and described gas transport unit, the sealing of water coolant transfer passage arrange.
In described some gas transport unit, have at least a gas transport unit to comprise a gas delivery channels 22 ', one end of this gas delivery channels 22 ' is gas inlet 12 ', and the other end is pneumatic outlet.Preferably, the gas delivery channels of described gas transport unit is arranged at the middle section of flusher; Gas inlet is arranged at one end, top of gas delivery channels, and pneumatic outlet is arranged at one end, bottom of gas delivery channels.In the present embodiment, flusher need to be inputted two kinds of gases, and a kind of gas transport unit of gas is by transfer passage 22 ' delivering gas, and the gas transport unit of another kind of gas is still carried by scheme of the prior art.
The gas outlet of described gas delivery channels arranges gas panel 4 '; Described gas panel 4 ' arranges a plurality of through holes 13 ', 14,15, and the gas of the described gas delivery channels 22 ' of flowing through flows out by described through hole 13 ', 14,15.Refer to Fig. 4, Fig. 5, through hole 13 ' is arranged on the central region of gas panel 4 ', and through hole 14,15 is arranged on the side of gas panel 4 '.The aperture of described gas panel 22 ' side through hole is as much as possible little, as less than the aperture of gas panel middle through-hole in being designed to, so that gas can be sprayed onto is far.
In addition, the through hole 13 ' at described gas panel middle part be arranged in parallel with gas delivery channels 22 '; The through hole 14,15 of gas panel side is obliquely installed.As shown in Figure 4, each through hole 14,15 of described gas panel 4 ' side is divergent shape, is set angle with the axis of gas delivery channels, as between 10 °-80 ° (as 30 °, 45 °, 60 °).The angle of inclination of each through hole can be different; As, gas panel comprises some ring through hole, and i circle is designed to 30 °, and the design of i+1 circle is at 45 °, and i+2 circle is designed to 60 °, etc.
In sum, electroless plating reactor and flusher thereof that the present invention proposes, the structure of transformation Shower Head is accomplished the simplification of making processes.The pore quantity that the present invention has reduced Shower Head reduces the quantity at sealing position, so weld is fewer a lot of than original, its simple structure, and in use, out of order probability is little, can effectively reduce maintenance cost.
Embodiment bis-
The difference of the present embodiment and embodiment mono-is, in the present embodiment, a plurality of in some gas transport unit of described flusher (can be 2 or 3, even whole) comprise respectively a gas delivery channels, one end of this gas delivery channels is gas inlet, and the other end is pneumatic outlet; The gas outlet of described gas delivery channels arranges gas panel; Described gas panel arranges a plurality of through holes, and the gas of the described gas delivery channels of flowing through flows out by described through hole; The aperture of the aperture ratio gas panel middle through-hole of described gas panel side through hole is little, and the through hole of gas panel side is obliquely installed.
The gas delivery channels of each gas transport unit is arranged at the central region of flusher, and each gas delivery channels space arranges.
The present embodiment can reduce the pore quantity of Shower Head further, reduces the quantity at sealing position simultaneously, can effectively reduce failure rate, reduces maintenance cost.
Embodiment tri-
Shower Head of the present invention has: the entrance of unstripped gas, outlet; The inner separated separating layer of Shower Head of each unstripped gas; A kind of in above-mentioned raw materials gas is by the inflow pipe of the entrance inflow of Shower Head center upper portion portion, by Shower Head bottom inlet, is diffused into all central gas panels of substrate.Gas passage in the Shower Head such as the separating layer of the above-mentioned Shower Head of the present invention, gas inflow pipe, gas panel should be to be avoided with other gas or contacting of water coolant and will reach absolute seal.
The edge section of the central gas panel of Shower Head bottom is made into certain gradient, and central gas can be reached on substrate farthest smoothly.Meanwhile, the pore of the edge section of the central gas panel of Shower Head bottom is less than middle hole diameter, can be sprayed onto farther distance.
With reference to Fig. 3, in Shower Head gas inflow entrance 11,12 ', there is one in the side of Shower Head, another is in the middle of the top of Shower Head.The gas of coming in side is supplied on the substrate of film engineering generation by the aperture 21 being connected with Shower Head bottom, the gas that Shower Head top flows into is to be connected by the very large pipe 22 ' of diameter the bottom 3 that reaches Shower Head with Shower Head bottom, supplies with the gas of Shower Head bottom by central gas panel 4 '.Through hole 13 ' supply gas by central gas panel central authorities is to SUSCEPTOR central authorities, and through hole 14,15 supply gas by central gas panel side are to SUSCEPTOR skin.
Fig. 3 of the present invention and prior art Fig. 1 make comparisons, and can see discrepancy of the present invention.Like the prior art, all gas is not mixed in Shower Head inside for Shower Head of the present invention, and Shower Head bottom cooling also plays same effect.Meanwhile, the fully little side by gas panel of pore of the side gas of the present invention central authorities gas panel is flowed out and can be replaced original gas flow.
The gas that the Shower Head central authorities of Fig. 3 flow into is supplied to the outside of Shower Head by the side through hole 14,15 of the central gas panel of Fig. 4, by central gas panel center through hole 13 ', be supplied to Shower Head central part.The side through hole 14,15 that shows central gas panel as Fig. 4 is gradient, makes gas flow arrive Shower Head, and the aperture of the side through hole 14,15 of central gas panel fully dwindles, and makes can be sprayed onto far by the gas of this pore.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Here the distortion of disclosed embodiment and change is possible, and for those those of ordinary skill in the art, the various parts of the replacement of embodiment and equivalence are known.Those skilled in the art are noted that in the situation that not departing from spirit of the present invention or essential characteristic, and the present invention can be with other form, structure, layout, ratio, and realizes with other assembly, material and parts.In the situation that not departing from the scope of the invention and spirit, can carry out other distortion and change to disclosed embodiment here.
Claims (6)
1. a flusher for electroless plating reactor, is characterized in that: described flusher comprises some gas transport unit, in order to input respectively different gas;
In described some gas transport unit, have at least a gas transport unit to comprise a gas delivery channels, one end of this gas delivery channels is gas inlet, and the other end is pneumatic outlet;
The gas outlet of described gas delivery channels arranges gas panel;
Described gas panel arranges a plurality of through holes, and the gas of the described gas delivery channels of flowing through flows out by described through hole;
The aperture of the aperture ratio gas panel middle through-hole of described gas panel side through hole is little, and the through hole of gas panel side is obliquely installed;
Described flusher arranges water coolant transfer passage below each gas transport unit, and described gas transport unit, the sealing of water coolant transfer passage arrange;
Described gas panel comprises some circles side through hole, and the angle of inclination of the side through hole of each circle is different.
2. the flusher of electroless plating reactor according to claim 1, is characterized in that:
The gas delivery channels of described gas transport unit is arranged at the middle section of flusher;
Gas inlet is arranged at one end, top of gas delivery channels, and pneumatic outlet is arranged at one end, bottom of gas delivery channels.
3. the flusher of electroless plating reactor according to claim 1, is characterized in that:
Some gas transport unit of described flusher comprise respectively a gas delivery channels, and one end of this gas delivery channels is gas inlet, and the other end is pneumatic outlet;
The gas outlet of described gas delivery channels arranges gas panel; Described gas panel arranges a plurality of through holes, and the gas of the described gas delivery channels of flowing through flows out by described through hole;
The aperture of the aperture ratio gas panel middle through-hole of described gas panel side through hole is little, and the through hole of gas panel side is obliquely installed.
4. the flusher of electroless plating reactor according to claim 3, is characterized in that:
The gas delivery channels of each gas transport unit is arranged at the central region of flusher, and each gas delivery channels space arranges.
5. the flusher of electroless plating reactor according to claim 3, is characterized in that:
Through hole and the gas delivery channels at described gas panel middle part be arranged in parallel;
Each through hole of described gas panel side is divergent shape, is set angle with the axis of gas delivery channels, between 10 °-80 °.
6. an electroless plating reactor, is characterized in that: described electroless plating reactor comprises the flusher that one of claim 1 to 5 is described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010264060.6A CN102373439B (en) | 2010-08-24 | 2010-08-24 | Chemical deposition reactor and spraying device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010264060.6A CN102373439B (en) | 2010-08-24 | 2010-08-24 | Chemical deposition reactor and spraying device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102373439A CN102373439A (en) | 2012-03-14 |
| CN102373439B true CN102373439B (en) | 2014-02-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010264060.6A Expired - Fee Related CN102373439B (en) | 2010-08-24 | 2010-08-24 | Chemical deposition reactor and spraying device thereof |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20120321788A1 (en) * | 2011-06-16 | 2012-12-20 | Pinecone Material Inc. | Rotation system for thin film formation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5741547A (en) * | 1996-01-23 | 1998-04-21 | Micron Technology, Inc. | Method for depositing a film of titanium nitride |
| CN1538507A (en) * | 2003-04-14 | 2004-10-20 | 华邦电子股份有限公司 | Gas distribution system of semiconductor machine table gas reaction chamber and method |
| CN1664165A (en) * | 2005-02-02 | 2005-09-07 | 南昌大学 | Spray nozzle for growth of compound semiconductor materials and method for feeding raw materials |
| CN101174542A (en) * | 2006-11-01 | 2008-05-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection apparatus |
| CN101499407A (en) * | 2008-02-02 | 2009-08-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas dispensing device and semiconductor process plant employing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100517560C (en) * | 2006-09-22 | 2009-07-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection device |
-
2010
- 2010-08-24 CN CN201010264060.6A patent/CN102373439B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5741547A (en) * | 1996-01-23 | 1998-04-21 | Micron Technology, Inc. | Method for depositing a film of titanium nitride |
| CN1538507A (en) * | 2003-04-14 | 2004-10-20 | 华邦电子股份有限公司 | Gas distribution system of semiconductor machine table gas reaction chamber and method |
| CN1664165A (en) * | 2005-02-02 | 2005-09-07 | 南昌大学 | Spray nozzle for growth of compound semiconductor materials and method for feeding raw materials |
| CN101174542A (en) * | 2006-11-01 | 2008-05-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection apparatus |
| CN101499407A (en) * | 2008-02-02 | 2009-08-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas dispensing device and semiconductor process plant employing the same |
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| CN102373439A (en) | 2012-03-14 |
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Granted publication date: 20140205 Termination date: 20180824 |