CN203741412U - Atomic layer thin film deposition air inlet device - Google Patents
Atomic layer thin film deposition air inlet device Download PDFInfo
- Publication number
- CN203741412U CN203741412U CN201420031395.7U CN201420031395U CN203741412U CN 203741412 U CN203741412 U CN 203741412U CN 201420031395 U CN201420031395 U CN 201420031395U CN 203741412 U CN203741412 U CN 203741412U
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- CN
- China
- Prior art keywords
- thrust
- thin film
- atomic layer
- augmenting nozzle
- film deposition
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 19
- 239000011148 porous material Substances 0.000 claims description 49
- 238000005520 cutting process Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 26
- 229910052710 silicon Inorganic materials 0.000 abstract description 20
- 239000010703 silicon Substances 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 7
- 238000012545 processing Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000013022 venting Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000007736 thin film deposition technique Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910001868 water Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000007937 lozenge Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model relates to the technical field of atomic layer thin film deposition, and discloses an atomic layer thin film deposition air inlet device. The atomic layer thin film deposition air inlet device comprises joints, a connecting pipe and a first diversion pipe, wherein the connecting pipe is communicated with the first joint and the first diversion pipe respectively, a first blanking cap and a second blanking cap are arranged at two ends of the first diversion pipe respectively, and a plurality of first exhaust ports are formed at the lower part of the first diversion pipe along the axial direction respectively. The atomic layer thin film deposition air inlet device disclosed by the utility model is provided with the plurality of exhaust ports, so that the air inlet device is suitable for batch treatment of multiple silicon wafers, the capacity of the silicon wafers within unit time is greatly increased, and gas field eddy current of the first diversion pipe and a second diversion pipe is weakened; further, a ferrule and the second joint are in threaded connection with each other, so that the air jet direction of the first exhaust ports of the first diversion pipe in a reaction chamber can be randomly adjusted according to different process demands; the air inlet device is simple in structure and low in processing cost.
Description
Technical field
The utility model relates to atomic layer level thin film deposition technique field, relates in particular to a kind of atomic layer level thin film deposition diffuser.
Background technology
The principle of atomic layer level thin film deposition technique: when the temperature in reaction chamber and pressure are during at a specified range, alternately gas reaction source A and gas reaction source B are passed into reaction chamber and arrive silicon chip surface, circulation successively, realize in the mode of monoatomic layer growth at silicon chip surface deposit film, atomic layer level thin film deposition technique has the advantage such as deposition characteristics and film thickness controllability.
In patent US20020007790A1 and US006921437B1, disclose respectively a kind ofly for carrying out the diffuser of atomic layer level thin film deposition, two kinds of diffusers are by an air inlet Zong Lu and many diverter branchs compositions.Wherein, the flow direction of gas reaction source in the total road of air inlet with it flow direction in diverter branch vertical, taking the total road of air inlet, as the center of circle, rounded diffusion type is uniformly distributed many diverter branchs, on every diverter branch, offers a discharge pore along vertical axial.During technique is carried out, need two independently diffuser alternately two kinds of different gas reaction sources are passed in reaction chamber, be vertically sprayed at silicon chip surface, be deposited as atomic layer level thin film.This structure can realize well gas reaction source and distribute at silicon chip surface, has significantly improved the deposition quality of silicon chip surface film.But above-mentioned diffuser has following defect in structure design simultaneously: (1) this diffuser is only applicable to single silicon chip in reaction chamber, at every turn can only be at a slice silicon chip surface deposit film, therefore equipment capacity is little, maintenance cost is high; (2) flow direction of gas reaction source in the total road of air inlet with it flow direction in diverter branch vertical, simultaneously, the flow direction of gas reaction source in diverter branch is vertical with its flow direction at production well place again, therefore in air inlet runner, there is many places bent angle, cause corner to have gas field eddy current, gas reaction source is difficult to emptying; (3) gas reaction source silicon chip surface by silicon chip in mind-set surrounding spread, cause gas reaction source utilization ratio low; (4) diffuser complex structure, tooling cost is high, and high precision repeats processibility and is difficult to ensure.
Utility model content
The technical problems to be solved in the utility model is that atomic layer level thin film deposition diffuser is only applicable to single silicon chip, production capacity is little, and in air inlet runner, there is many places bent angle, cause corner to have gas field eddy current and gas reaction source utilization ratio is low, apparatus structure is complicated problem.
In order to solve the problems of the technologies described above, the utility model provides a kind of atomic layer level thin film deposition diffuser, comprising: joint, adapter and the first thrust-augmenting nozzle; Described adapter is communicated with described the first joint and described the first thrust-augmenting nozzle respectively, and described the first thrust-augmenting nozzle two ends are separately installed with the first blanking cover and the second blanking cover, and the bottom of described the first thrust-augmenting nozzle axially has multiple first row pores along it.
Wherein, in described the first thrust-augmenting nozzle, be provided with the second thrust-augmenting nozzle, the top of described the second thrust-augmenting nozzle 10 axially has multiple second row pores along it.
Wherein, described the second blanking cover is provided with wedge, and described wedge is positioned at described the second thrust-augmenting nozzle.
Wherein, be respectively equipped with the second joint and cutting ferrule in described adapter, described cutting ferrule is connected with described the second joint by screw thread.
Wherein, the distance of the distance of described first row pore and described the first blanking cover and described the second blanking cover and described second row pore and described the first blanking cover and described the second blanking cover is 0.1mm-1mm.
Wherein, the 0.5-0.9 that multiple described second row pore total areas are described the second thrust-augmenting nozzle cross-sectional area doubly.
Wherein, the 1-8 that multiple described first row pore total areas are described the second thrust-augmenting nozzle cross-sectional area doubly.
Wherein, between described the second joint and described adapter, be provided with sealing-ring.
Technique scheme tool of the present utility model has the following advantages: atomic layer level thin film deposition diffuser provided by the utility model is by the setting of multiple venting holes, make diffuser be applicable to many silicon chips batch processing, significantly increase the silicon chip production capacity in unit time, also improved the utilization ratio in gas reaction source, and by reducing first row pore, the distance of second row pore and the first blanking cover and the second blanking cover, weaken the gas field eddy current of the first thrust-augmenting nozzle and the second thrust-augmenting nozzle, further, cutting ferrule and the second joint are threaded connection can be according to different process requirements, the jet-impingement direction of the first row pore of adjusting the first thrust-augmenting nozzle in reaction chamber arbitrarily, simple in structure, tooling cost is low.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model embodiment atomic layer level thin film deposition diffuser;
Fig. 2 is the sectional view of the first thrust-augmenting nozzle and the second thrust-augmenting nozzle in the utility model embodiment atomic layer level thin film deposition diffuser;
Fig. 3 is the perforate schematic diagram of the first thrust-augmenting nozzle and the second thrust-augmenting nozzle in the utility model embodiment atomic layer level thin film deposition diffuser;
Fig. 4 is the utility model embodiment atomic layer level thin film deposition diffuser injection direction schematic diagram in technique.
In figure: 1: the first joint; Adapter in 2: the first; 3: flange; 4: the second joints; 5: sealing-ring; 6: cutting ferrule; Adapter in 7: the second; 8: the first blanking covers; 9: the first thrust-augmenting nozzles; 10: the second thrust-augmenting nozzles; 11: the second blanking covers; 12: reaction chamber; 13: silicon chip; 14: the first diffusers; 15: the second diffusers.
Embodiment
Below in conjunction with drawings and Examples, embodiment of the present utility model is described in further detail.Following examples are used for illustrating the utility model, but are not used for limiting scope of the present utility model.
As shown in Figure 1, a kind of atomic layer level thin film deposition diffuser that the utility model provides, adapter comprises the first adapter 2 and the second adapter 7, first takes over 2 and second takes over 7 connections, first takes over 2 left ends is communicated with the first joint 1, the first joint 1 is VCR joint, the first joint 1 is connected with vapor reaction source, gas reaction source is the combination of trimethyl aluminium and nitrogen or the combination of water and nitrogen, second takes over 7 right-hand members is communicated with the first thrust-augmenting nozzle 9, the first thrust-augmenting nozzle 9 two ends, left and right are welded with respectively the first blanking cover 8 and the first thrust-augmenting nozzle 9, gas reaction source is taken over 7 from the first joint 1 through the first adapter 2 and second and is entered the first thrust-augmenting nozzle 9, the bottom of the first thrust-augmenting nozzle 9 axially has multiple first row pores along it, first row pore can set in a row, as shown in Figure 3, in the present embodiment, have three and ranked first venting hole, often arrange and establish the first row pore that multiple diameters are 1mm, angle between adjacent row's first row pore is α 2, α 2 is 10 °-120 °, first row pore can blow to gas reaction source silicon chip 13, multiple venting holes can blow to multiple silicon chips 13 simultaneously, be applicable to many silicon chips batch processing, significantly increase the silicon chip production capacity in unit time, also improved the utilization ratio in gas reaction source.
As shown in Figure 2, preferably, in the first thrust-augmenting nozzle 9, be provided with the second thrust-augmenting nozzle 10, the second thrust-augmenting nozzle 10 is communicated with the second adapter 7 in taking over, the top of the second thrust-augmenting nozzle 10 axially has multiple second row pores along it, second row pore can set in a row, as shown in Figure 3, in the present embodiment, have three and ranked second venting hole, often arrange and establish the second row pore that multiple diameters are 1mm, angle between adjacent row's second row pore is α 1, α 1 is 10 °-120 °, gas reaction source enters the first thrust-augmenting nozzle 9 again through second row pore, spray from the first row pore of the first thrust-augmenting nozzle 9, second row pore has weakened the injection effect of first row pore, contribute to the fully diffusion in reaction chamber of gas reaction source, second row pore makes gas reaction source be injected in more uniformly silicon chip 13 surfaces.
As shown in Figure 1, preferably, the second blanking cover 11 is provided with wedge, wedge is positioned at the second thrust-augmenting nozzle 10, as shown in Figure 2, lozenges angle β 1 tangential and that the second thrust-augmenting nozzle 10 is axial in the present embodiment is 30 °, and the wedge shape inclined-plane of wedge has weakened the gas field eddy current in the second thrust-augmenting nozzle 10, is conducive to gas reaction source and discharges from the second thrust-augmenting nozzle.
As shown in Figure 1, preferably, in adapter, be respectively equipped with the second joint 4 and cutting ferrule 6, first takes over 2 is communicated with the second joint 4, cutting ferrule 6 is fixed on the second adapter 7 outsides, cutting ferrule 6 is connected with the second joint 4 by screw thread, by rotation cutting ferrule 6, thereby drive the first thrust-augmenting nozzle 9 to rotate, can adjust the spray angle of the first thrust-augmenting nozzle 9, cutting ferrule 6 and the second joint 4 are threaded connection can be according to different process requirements, the jet-impingement direction of the first row pore of any adjusting the first thrust-augmenting nozzle 9 in reaction chamber 12 within the scope of 0 °-360 °.
As shown in Figure 2, preferably, the distance of second row pore and the first blanking cover 8 and the second blanking cover 11 is 0.1mm-1mm, second row pore in the present embodiment and the distance B of the first blanking cover 81 are 0.2mm, the distance B 2 of second row pore and the second blanking cover 11 is 0.2mm, by reducing the distance of second row pore and the first blanking cover 8 and the second blanking cover 11, weaken the gas field eddy current in the second thrust-augmenting nozzle 10, being conducive to gas reaction source discharges from the second thrust-augmenting nozzle 10, the distance of first row pore and the first blanking cover 8 and the second blanking cover 11 is 0.1mm-1mm, first row pore in the present embodiment and the distance B of the first blanking cover 83 are 0.2mm, the distance B 4 of first row pore and the second blanking cover 11 is 0.2mm, by reducing the distance of first row pore and the first blanking cover 8 and the second blanking cover 11, weaken the gas field eddy current in the first thrust-augmenting nozzle 9, being conducive to gas reaction source discharges from the first thrust-augmenting nozzle 9.
Preferably, the 0.5-0.9 that multiple second row pore total areas are the second thrust-augmenting nozzle 10 cross-sectional areas doubly, the Pressure Drop producing during along the second thrust-augmenting nozzle 10 axial motion to reduce air-flow, it is poor to reduce along the gas mass flow between second row pore on the second thrust-augmenting nozzle 10 axial direction dues; The 1-8 that multiple first row pore total areas are the second thrust-augmenting nozzle 10 cross-sectional areas times, the injection effect producing at the first row pore place of the first thrust-augmenting nozzle 9 to weaken air-flow.
As shown in Figure 1, preferably, between the second joint 4 and adapter, be provided with sealing-ring 5; Adapter is provided with flange 3, diffuser is arranged in reaction chamber 12 by flange 3, the corresponding multiple silicon chips 13 of first row pore, diffuser injection direction as shown in Figure 4, gas reaction source and inert purge gas nitrogen are sprayed in diffuser and brilliant boat gap, gas reaction source and nitrogen arrive silicon chip 13 surfaces through diffusion, and the first joint 1 of the first diffuser 14 is connected with trimethyl aluminium and nitrogen, and the first joint 1 of the second diffuser 15 is connected with water and nitrogen.
As shown in Figure 4, when the utility model atomic layer level thin film deposition diffuser uses, diffuser is arranged in reaction chamber by flange, the first joint is connected with trimethyl aluminium and nitrogen or water and nitrogen, blow to multiple silicon chips 13 through first row pore after by second row pore in gas reaction source, and gas reaction source and nitrogen arrive silicon chip surface through diffusion.
In sum, atomic layer level thin film deposition diffuser provided by the utility model is by the setting of multiple venting holes, make diffuser be applicable to many silicon chips batch processing, significantly increase the silicon chip production capacity in unit time, also improved the utilization ratio in gas reaction source, and by reducing first row pore, the distance of second row pore and the first blanking cover and the second blanking cover, weaken the gas field eddy current of the first thrust-augmenting nozzle and the second thrust-augmenting nozzle, further, cutting ferrule and the second joint are threaded connection can be according to different process requirements, the jet-impingement direction of the first row pore of adjusting the first thrust-augmenting nozzle in reaction chamber arbitrarily, simple in structure, tooling cost is low.
Above embodiment only, in order to the technical solution of the utility model to be described, is not intended to limit; Although the utility model is had been described in detail with reference to previous embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or part technical characterictic is wherein equal to replacement; And these amendments or replacement do not make the essence of appropriate technical solution depart from the spirit and scope of the each embodiment technical scheme of the utility model.
Claims (8)
1. an atomic layer level thin film deposition diffuser, is characterized in that, comprising: the first joint (1), adapter and the first thrust-augmenting nozzle (9); Described adapter is communicated with described the first joint (1) and described the first thrust-augmenting nozzle (9) respectively, described the first thrust-augmenting nozzle (9) two ends are separately installed with the first blanking cover (8) and the second blanking cover (11), and the bottom of described the first thrust-augmenting nozzle (9) axially has multiple first row pores along it.
2. atomic layer level thin film deposits diffuser according to claim 1, it is characterized in that: in described the first thrust-augmenting nozzle (9), be provided with the second thrust-augmenting nozzle (10), the top of described the second thrust-augmenting nozzle (10) axially has multiple second row pores along it.
3. atomic layer level thin film deposits diffuser according to claim 2, it is characterized in that: described the second blanking cover (11) is provided with wedge, and described wedge is positioned at described the second thrust-augmenting nozzle (10).
4. atomic layer level thin film deposits diffuser according to claim 1, it is characterized in that: in described adapter, be respectively equipped with the second joint (4) and cutting ferrule (6), described cutting ferrule (6) is connected with described the second joint (4) by screw thread.
5. atomic layer level thin film deposits diffuser according to claim 2, it is characterized in that: the distance of the distance of described first row pore and described the first blanking cover (8) and described the second blanking cover (11) and described second row pore and described the first blanking cover (8) and described the second blanking cover (11) is 0.1mm-1mm.
6. atomic layer level thin film deposits diffuser according to claim 2, it is characterized in that: the 0.5-0.9 that multiple described second row pore total areas are described the second thrust-augmenting nozzle (10) cross-sectional area doubly.
7. atomic layer level thin film deposits diffuser according to claim 2, it is characterized in that: the 1-8 that multiple described first row pore total areas are described the second thrust-augmenting nozzle (10) cross-sectional area doubly.
8. atomic layer level thin film deposits diffuser according to claim 4, it is characterized in that: between described the second joint (4) and described adapter, be provided with sealing-ring (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420031395.7U CN203741412U (en) | 2014-01-17 | 2014-01-17 | Atomic layer thin film deposition air inlet device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420031395.7U CN203741412U (en) | 2014-01-17 | 2014-01-17 | Atomic layer thin film deposition air inlet device |
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| Publication Number | Publication Date |
|---|---|
| CN203741412U true CN203741412U (en) | 2014-07-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420031395.7U Expired - Lifetime CN203741412U (en) | 2014-01-17 | 2014-01-17 | Atomic layer thin film deposition air inlet device |
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| CN (1) | CN203741412U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106191990A (en) * | 2016-08-30 | 2016-12-07 | 上海华力微电子有限公司 | A kind of air intake installation of boiler tube |
-
2014
- 2014-01-17 CN CN201420031395.7U patent/CN203741412U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106191990A (en) * | 2016-08-30 | 2016-12-07 | 上海华力微电子有限公司 | A kind of air intake installation of boiler tube |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: North China Science and technology group Limited by Share Ltd. Address before: 100015 Jiuxianqiao Chaoyang District, East Beijing Road, building M2, floor 1, No. 2 Patentee before: BEIJING SEVENSTAR ELECTRONIC Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180316 Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: North China Science and technology group Limited by Share Ltd. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140730 |
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| CX01 | Expiry of patent term |