CN106191990B - A kind of inlet duct of boiler tube - Google Patents
A kind of inlet duct of boiler tube Download PDFInfo
- Publication number
- CN106191990B CN106191990B CN201610770371.7A CN201610770371A CN106191990B CN 106191990 B CN106191990 B CN 106191990B CN 201610770371 A CN201610770371 A CN 201610770371A CN 106191990 B CN106191990 B CN 106191990B
- Authority
- CN
- China
- Prior art keywords
- air inlet
- cassette
- inlet pipe
- boiler tube
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a kind of inlet ducts of boiler tube, including:Air inlet is set to the side wall lower ends of furnace process chamber, is connected to external reaction gas piping;Air inlet pipe is set in process cavity, and one end connects air inlet, other end closing, the air inlet pipe cassette setting in process cavity from bottom to top;Multiple nozzles are uniformly arranged along intake manifold length direction and towards cassette;When technique, by being passed through reaction gas into air inlet pipe from air inlet, and it is sprayed from each nozzle to cassette, every layer of silicon chip in cassette is set all uniformly to touch reaction gas, simultaneously, cassette is kept to be in stationary state, while ensureing product thickness uniformity, to avoid bringing particle contamination because cassette rotates.
Description
Technical field
The present invention relates to semiconductor processing equipment technical fields, more particularly, to a kind of boiler tube air inlet of special designing
Device.
Background technology
As integrated circuit continues to incorporate more next on one piece of smaller and smaller chip toward the development in high density direction
More component so that chip is lower and lower to the tolerance of defect, and more smaller size of defects have been increasingly becoming yield
Killer.Meanwhile higher and higher is also become to the uniformity requirement of full wafer silicon chip.
Referring to Fig. 1, Fig. 1 is a kind of existing furnace tube structure schematic diagram.As shown in Figure 1, boiler tube is equipped with process cavity 12, work
The bottom of skill chamber 12 is equipped with pedestal 10, and cassette 13 is carried on pedestal 10, horizontal from bottom to top in cassette 13 that multilayer silicon is housed
Piece 14.Magnetic fluid 16 is equipped in pedestal 10, for driving cassette 13 to rotate.The sidewall bottom of process cavity 12 is additionally provided with nozzle 11
(Injector), for being passed through reaction gas into process cavity 12.When technique, cassette 13 rotates under the drive of magnetic fluid 16,
So that the silicon chip 14 in cassette 13 is in the atmosphere of reaction gas and receives technique.
Above-mentioned boiler tube is disposably equipped with multiple (layers) using batch (batch) operating type in cassette 13
Silicon chip 14 is carried out at the same time technique.Since it is used to be passed through the bottom that the nozzle 11 of reaction gas is located at process cavity 12, in order to ensure
The reaction gas that silicon chip 14 touches in technique is uniform, to ensure the uniformity of product thickness after technique, is made in silicon chip
During industry, by the magnetic fluid 16 installed below cassette 13, cassette 13 is driven to rotate, make silicon chip 14 in cassette 13 with
Rotation so that each layer of silicon chip 14 can be uniformly in contact with to reaction gas, to ensure the uniform of product thickness.
But in above-mentioned existing boiler tube, between the rotation and silicon chip 14 and cassette 13 of magnetic fluid 16 and cassette 13
The relative friction of generation, the problem of all bringing particle 15 so that process cavity 12 and product 14 are contaminated.This will be seriously affected
The quality and production efficiency of product.
Invention content
It is an object of the invention to overcome drawbacks described above of the existing technology, a kind of inlet duct of boiler tube is provided, with
Ensure the uniformity of product thickness while reducing particle source.
To achieve the above object, technical scheme is as follows:
A kind of inlet duct of boiler tube, including:
Air inlet is set to the side wall lower ends of furnace process chamber, is connected to external reaction gas piping;
Air inlet pipe is set in process cavity, and one end connects air inlet, other end closing, air inlet pipe ring from bottom to top
The cassette of winding technologe intracavitary is arranged;
Multiple nozzles are uniformly arranged along intake manifold length direction and towards cassette, and the spout of the nozzle is towards cassette water
Flat setting;
Exhaust tube is set to the top of process cavity, for the residual gas after technique to be discharged;
Wherein technique when, by being passed through reaction gas into air inlet pipe from air inlet, and every into cassette from each nozzle
Layer silicon chip injection, makes every layer of silicon chip in cassette all uniformly touch reaction gas, meanwhile, keep cassette to be in stationary shape
State, while ensureing product thickness uniformity, to avoid bringing particle contamination because cassette rotates.
Preferably, the air inlet is one to several, and each air inlet is correspondingly connected with an air inlet pipe.
Preferably, the air inlet pipe is arranged around the side of cassette from bottom to top by screw type.
Preferably, in the air inlet pipe each nozzle area of injection orifice summation be less than the air inlet pipe cross-sectional area.
Preferably, the section of the air inlet pipe is round or polygon.
Preferably, the spout of the nozzle is round, triangle or polygon.
Preferably, the diameter of the air inlet pipe is gradually reduced from bottom to top.
Preferably, the area of injection orifice of each nozzle is gradually reduced from bottom to top along the air inlet pipe.
Preferably, the air inlet pipe is two, is separately connected an air inlet, and two air inlet pipe are pressed left and right respectively
The hand of spiral is symmetrical arranged around the side of cassette from bottom to top.
It can be seen from the above technical proposal that the present invention by furnace process intracavitary from bottom to top around cassette be arranged into
Tracheae, and multiple nozzles are uniformly arranged in air inlet pipe, can be from the side of cassette equably every layer into cassette by nozzle
Silicon chip sprays reaction gas, makes product that can uniformly touch reaction gas in technique, and can remove the magnetic fluid of cassette bottom,
Keep cassette remains stationary in operation process motionless, to while ensureing product thickness uniformity, reduce particle and cause
Pollution.
Description of the drawings
Fig. 1 is a kind of existing furnace tube structure schematic diagram;
Fig. 2 is a kind of inlet duct structural schematic diagram of boiler tube of a preferred embodiment of the present invention.
Specific implementation mode
Below in conjunction with the accompanying drawings, the specific implementation mode of the present invention is described in further detail.
It should be noted that in following specific implementation modes, when embodiments of the present invention are described in detail, in order to clear
Ground indicates the structure of the present invention in order to illustrate, spy does not draw to the structure in attached drawing according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should avoid in this, as limitation of the invention to understand.
In specific implementation mode of the invention below, referring to Fig. 2, Fig. 2 is one kind of a preferred embodiment of the present invention
The inlet duct structural schematic diagram of boiler tube.As shown in Fig. 2, a kind of inlet duct of boiler tube of the present invention, is arranged in boiler tube, stove
Pipe is equipped with process cavity 23, and the bottom of process cavity 23 is equipped with pedestal 20, and cassette 24 is carried on pedestal 20, in cassette 24 from lower and
It is upper horizontal equipped with multiple (layer) silicon chips 26.The top of process cavity 23 is equipped with exhaust tube 25, for the residual gas after technique to be discharged.
The inlet duct of the boiler tube includes:Air inlet 21, air inlet pipe 22 and the nozzle being arranged in air inlet pipe 22 (figure omits).
Please refer to Fig. 2.The side wall lower ends in furnace process chamber 23 are arranged in air inlet 21.Air inlet 21 is connected to external reaction gas
Body pipeline, for being passed through reaction gas into process cavity 23.
Please refer to Fig. 2.Air inlet pipe 22 is mounted in process cavity 23.One end of air inlet pipe 22 connects air inlet 21, the other end
For blind end.Cassette 24 of the air inlet pipe 22 in the way of from bottom to top in process cavity is arranged, by the side of cassette 24
Face surrounds, and there are certain spacing.
It is evenly arranged with multiple nozzles in air inlet pipe 22, along the length direction of air inlet pipe 22.The spout of each nozzle towards
24 direction of cassette is arranged, for example, the spout of each nozzle is all horizontally disposed using the direction towards cassette 24, to ensure to react
Blow to gas level every layer of silicon chip 26.
When carrying out technique, by being passed through reaction gas into air inlet pipe 22 from air inlet 21, and from each nozzle to cassette
24 injections can make every layer of silicon chip 26 in cassette 24 can be uniformly in contact with to reaction gas, to it can guarantee technique after
The thickness evenness of every silicon chip product;Meanwhile original magnetic fluid being arranged in cassette bottom can be removed, to keep cassette
24 are in stationary state, can avoid band due to cassette 24 rotates while ensureing product thickness uniformity in this way
The particle contamination problems come.
As a preferred embodiment, the air inlet pipe 22 can be surround cassette from bottom to top according to the pattern of spiral
24 side is configured.In this way, even if an air inlet pipe is only arranged, it is also ensured that every layer of silicon chip can equably connect
Contact reaction gas.
In view of gas is along the crushing of tube wall, the area of injection orifice summation of each nozzle in the air inlet pipe 22 can also be designed
For the cross-sectional area less than the air inlet pipe, the amount of the reaction gas sprayed from each nozzle with guarantee is uniform.
As other preferred embodiments, the section of the air inlet pipe 22 can be processed as to round or polygon, with
Ensure that reaction gas can swimmingly flow in air inlet pipe.
The spout of the nozzle can also be processed as to round, triangle or polygon, to ensure that reaction gas can be equal
It is even and glibly from each nozzle spray.
It, can also be by the air inlet pipe to avoid crushing of the gas along tube wall as further preferred embodiment
Diameter is processed according to being gradually reduced from bottom to top.It is equally possible that each nozzle in this air inlet pipe according to spray
The mode that open area is gradually reduced from bottom to top along the air inlet pipe is processed.
As an optional embodiment, on the basis of above structure, can be set in the side wall lower ends of furnace process chamber
Several air inlets are set, meanwhile, so that each air inlet is correspondingly connected with an air inlet pipe, each air inlet pipe is from bottom to top around crystalline substance
The side of boat is configured, and reaction gas is more uniformly ejected to can guarantee from the side of cassette.
As a preferred embodiment, two air inlet pipe can be set, each air inlet pipe is separately connected an air inlet,
Two air inlet pipe are pressed the left and right hand of spiral and are symmetrical arranged from bottom to top around the side of cassette respectively, to be formed more preferably
The uniformly effect of injection reaction gas.
In conclusion air inlet pipe is arranged by surrounding cassette from bottom to top in furnace process intracavitary in the present invention, and in air inlet
Multiple nozzles are uniformly arranged on pipe, by the way that nozzle can equably every layer of silicon chip into cassette sprays reaction gas from the side of cassette
Body makes product that can uniformly touch reaction gas in technique, and can remove the magnetic fluid of cassette bottom, makes cassette in operation
Remains stationary is motionless in journey, is polluted caused by while ensureing product thickness uniformity, reduce particle.
Above-described to be merely a preferred embodiment of the present invention, the embodiment is not to be protected to limit the patent of the present invention
Range, therefore equivalent structure variation made by every specification and accompanying drawing content with the present invention are protected, similarly should be included in
In protection scope of the present invention.
Claims (9)
1. a kind of inlet duct of boiler tube, which is characterized in that including:
Air inlet is set to the side wall lower ends of furnace process chamber, is connected to external reaction gas piping;
Air inlet pipe is set in process cavity, and one end connects air inlet, and other end closing, the air inlet pipe is from bottom to top around work
The cassette of skill intracavitary is arranged;
Multiple nozzles are uniformly arranged along intake manifold length direction and towards cassette, and the spout of the nozzle is set towards cassette level
It sets;
Exhaust tube is set to the top of process cavity, for the residual gas after technique to be discharged;
Wherein technique when, by being passed through reaction gas, and every layer of silicon from each nozzle into cassette into air inlet pipe from air inlet
Piece sprays, and every layer of silicon chip in cassette is made all uniformly to touch reaction gas, meanwhile, keep cassette to be in stationary state,
While ensureing product thickness uniformity, to avoid bringing particle contamination because cassette rotates.
2. the inlet duct of boiler tube according to claim 1, which is characterized in that the air inlet is one to several, often
A air inlet is correspondingly connected with an air inlet pipe.
3. the inlet duct of boiler tube according to claim 1, which is characterized in that the air inlet pipe presses screw type from bottom to top
It is arranged around the side of cassette.
4. the inlet duct of boiler tube according to claim 1, which is characterized in that the spout face of each nozzle in the air inlet pipe
Product summation is less than the cross-sectional area of the air inlet pipe.
5. the inlet duct of boiler tube according to claim 1, which is characterized in that the section of the air inlet pipe is round or more
Side shape.
6. the inlet duct of boiler tube according to claim 4, which is characterized in that the spout of the nozzle is round or polygon
Shape.
7. the inlet duct of boiler tube according to claim 3, which is characterized in that the diameter of the air inlet pipe from bottom to top by
It is decrescence small.
8. the inlet duct of boiler tube according to claim 7, which is characterized in that the area of injection orifice of each nozzle is described in
Air inlet pipe is gradually reduced from bottom to top.
9. the inlet duct of boiler tube according to claim 1, which is characterized in that the air inlet pipe is two, is separately connected
One air inlet, two air inlet pipe are pressed the left and right hand of spiral and are symmetrical arranged from bottom to top around the side of cassette respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610770371.7A CN106191990B (en) | 2016-08-30 | 2016-08-30 | A kind of inlet duct of boiler tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610770371.7A CN106191990B (en) | 2016-08-30 | 2016-08-30 | A kind of inlet duct of boiler tube |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106191990A CN106191990A (en) | 2016-12-07 |
CN106191990B true CN106191990B (en) | 2018-10-16 |
Family
ID=58088868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610770371.7A Active CN106191990B (en) | 2016-08-30 | 2016-08-30 | A kind of inlet duct of boiler tube |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106191990B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109161871A (en) * | 2018-08-23 | 2019-01-08 | 德淮半导体有限公司 | Furnace tube apparatus and its working method |
CN110854047B (en) * | 2019-11-27 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
CN111834257B (en) * | 2020-06-11 | 2021-06-04 | 长江存储科技有限责任公司 | Air inlet device of furnace tube and furnace tube structure thereof |
CN111725102B (en) * | 2020-06-18 | 2023-07-14 | 北京北方华创微电子装备有限公司 | Furnace tube in semiconductor process equipment and semiconductor process equipment |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52149064A (en) * | 1976-06-07 | 1977-12-10 | Nippon Telegr & Teleph Corp <Ntt> | Device for ipitaxial growth |
JPS62230978A (en) * | 1986-03-31 | 1987-10-09 | Canon Inc | Deposited film forming device |
JPH0766130A (en) * | 1993-08-23 | 1995-03-10 | Nec Kansai Ltd | Chemical vapor deposition system |
WO1999036588A1 (en) * | 1998-01-15 | 1999-07-22 | Torrex Equipment Corporation | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
KR100727644B1 (en) * | 2005-12-06 | 2007-06-13 | 장희선 | An ion plating jig ass'y |
WO2011065839A1 (en) * | 2009-11-25 | 2011-06-03 | Dynatec Engineering As | Reactor and method for production of silicon |
CN102586759B (en) * | 2011-01-11 | 2014-07-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas delivery system and semiconductor processing equipment applying same |
CN103060774A (en) * | 2011-10-24 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber device and substrate processing equipment with same |
CN102732852A (en) * | 2012-07-06 | 2012-10-17 | 乐山新天源太阳能科技有限公司 | Silicon nitride film preparation device |
CN102938389B (en) * | 2012-11-20 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | Precipitation equipment |
CN203741412U (en) * | 2014-01-17 | 2014-07-30 | 北京七星华创电子股份有限公司 | Atomic layer thin film deposition air inlet device |
-
2016
- 2016-08-30 CN CN201610770371.7A patent/CN106191990B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN106191990A (en) | 2016-12-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106191990B (en) | A kind of inlet duct of boiler tube | |
US10304705B2 (en) | Cleaning device for atomizing and spraying liquid in two-phase flow | |
JP6521242B2 (en) | Substrate processing method and substrate processing apparatus | |
KR102027725B1 (en) | Substrate processing apparatus and substrate processing method | |
JP5832397B2 (en) | Substrate processing apparatus and substrate processing method | |
US20140261162A1 (en) | Substrate processing apparatus | |
TWI720076B (en) | Substrate cleaning device | |
JP5426141B2 (en) | Substrate processing apparatus and substrate processing method | |
KR101271259B1 (en) | apparatus for removing particles on a wafer | |
JP2008108829A (en) | Two-fluid nozzle and substrate processing apparatus employing the same | |
JP2005353739A (en) | Substrate cleaning apparatus | |
WO2020110858A1 (en) | Substrate washing method, processing vessel washing method, and substrate processing device | |
CN106816359B (en) | Wafer processing method | |
KR20070119398A (en) | Air knife and substrate drying system using it | |
KR102584068B1 (en) | Cleaning method and substrate processing device | |
JP6698396B2 (en) | Substrate processing method and substrate processing apparatus | |
JP5308211B2 (en) | Substrate processing equipment | |
JP4861391B2 (en) | Substrate processing apparatus and semiconductor device manufacturing method | |
KR20100046798A (en) | Single type substrate treating apparatus and method for controlling presure of substrate treating apparatus | |
US20160240400A1 (en) | Substrate processing apparatus | |
JP4673578B2 (en) | Semiconductor manufacturing equipment | |
CN104409392B (en) | A kind of horizontal diffusion furnace containing air inlet flux gun | |
KR101073373B1 (en) | Showerhead and Substrate processing apparatus using the same | |
KR101395248B1 (en) | nozzle unit | |
TWI643683B (en) | Fluid providing device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |