CN104409392B - A kind of horizontal diffusion furnace containing air inlet flux gun - Google Patents
A kind of horizontal diffusion furnace containing air inlet flux gun Download PDFInfo
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- CN104409392B CN104409392B CN201410643612.2A CN201410643612A CN104409392B CN 104409392 B CN104409392 B CN 104409392B CN 201410643612 A CN201410643612 A CN 201410643612A CN 104409392 B CN104409392 B CN 104409392B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
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Abstract
The invention discloses a kind of horizontal diffusion furnace containing air inlet flux gun, flux gun is used for the injection of process gas, flux gun is hollow quartzy gun barrel, the air inlet pipe that its openend is used for injection technology gas with diffusion furnace uses bulb and ball bowl fit system mechanical connection with mirror ultrafinish mating surface, side wall close to blind end around flux gun is provided with 1 to some groups jets, every group includes several spouts, process gas is entered after flux gun by air inlet pipe, can radially it be sprayed by uniform divided flows in each nozzle, and covering sprays to whole silicon chip surfaces of its obliquely downward under the suction guide effect of exhaust outlet, effectively it can prevent process gas from leaking, improve the uniformity of diffusion technique, reduce the influence of fluctuations to technological temperature, improve utilization rate of equipment and installations.
Description
Technical field
The present invention relates to field of semiconductor devices, more particularly, to a kind of horizontal diffusion furnace containing air inlet flux gun.
Background technology
With the development of semiconductor integrated circuit manufacturing process, characteristic size constantly reduces, and makes the integrated level of chip more next
It is higher, higher requirement is proposed to IC manufacturing and process equipment, newest technological development is increasingly set by technique
Standby restriction.
Semiconductor diffusion equipment is the important technological equipment of IC manufacturing, can the continuous work of long-time as a kind of requirement
Make, and with excellent temperature-controlled precision and good reliability, the automation control appliance of stability, applied to integrated circuit system
The techniques such as various oxidations, annealing and film growth during making.A kind of process results of diffusion facilities, i.e. semi-conductor silicon chip table
The uniformity of face diffusion layer, is the core index of diffusion facilities.
For horizontal diffusion furnace equipment, in order to ensure above-mentioned technique, material property realization, diffusion technique is to diffusion furnace
The horizontal gas flow uniformity controlling of the index of equipment, such as air inlet, airflow stability, it is proposed that higher requirement.
Referring to Fig. 1, Fig. 1 is the gas delivery system working state schematic representation of existing semiconductor horizontal diffusion furnace.Such as
Shown in Fig. 1, the gas delivery system of existing semiconductor horizontal diffusion furnace uses horizontal air inlet, the gas confession of lower exhaust
Give, discharge mode.Wherein, process gas is the end of the flux gun 3 of connection air inlet pipe 2 out of process duct 1 located at diffusion furnace
Spout injects in a horizontal manner, then under the suction guide effect of the exhaust outlet 5 of process duct 1, blows to the spout end of flux gun 3
One group of surface of silicon chip 4 (direction of arrow is signified in such as figure) that portion obliquely downward is disposed vertically side by side, and wish on the surface of silicon chip 4
Reaction or deposited.
The air intake structure and mode that the gas delivery system of above-mentioned existing semiconductor horizontal diffusion furnace is used exist bright
Aobvious defect：Because the spout of injection technology gas is located at the end end face of flux gun 3, and only one of which spout, therefore, from spray
The flow and flow velocity of the process gas of mouthful injection are relatively large, and the gas column of air-flow formation also just narrower (refer to spout in figure
The gas column range effect that the curved arrow at place is formed).This can cause the process gas of injection to be difficult to more simultaneously and evenly blow
To the surface of each silicon chip 4, causing the uniformity of diffusion cannot be effectively ensured.In order that injection process gas can to the greatest extent can
Can ground simultaneously and evenly blow to each silicon chip surface, it is common practice to widen between the spout of flux gun 3 and silicon chip 4 away from
From D1, to form wider gas column.But the increase apart from D1 can cause process gas in transmitting procedure it is uncontrollable because
The increase of element, and cause the increase that air flow rate, pressure and other parameters are controlled with difficulty, it is easier to cause the ripple of technological temperature
It is dynamic.From the point of view of actual diffusion result, its effect is unsatisfactory.
In addition, being attached between existing air inlet pipe 2 and flux gun 3 using ball bowl with bulb fit system.For
Ensure the sealing between ball bowl and bulb, be generally utilized between ball bowl and the mating surface of bulb and sealing gasket is set.Due to
Sealing gasket is typically made up of fluorine-containing rubber material, after using some cycles, can be because occurring corrosion and being influenceed to produce change by high temperature
Shape, causes seal failure, produces uneven process gas flow.Therefore, it is necessary to periodically carry out dismounting and change.This will to production efficiency
Affect, and flux gun easily brittle failure, the damage of ball bowl and bulb matching part is easily caused in dismounting, not only
Improve cost of equipment maintenance, and time-consuming clear of progress is also needed to the residue of ball bowl and the sealing gasket at bulb mating surface
Wash, influence will be further resulted on production efficiency.
These above-mentioned problems will directly affect uniformity, the effect of technique of diffusion technique, and to production efficiency and maintenance
Cost brings negative consequence.Therefore, seek a kind of more scientific process gas injecting structure and mode, just turn into current industry
One important topic.
The content of the invention
It is an object of the invention to overcome the drawbacks described above that prior art is present, there is provided a kind of sleeping containing air inlet flux gun
Formula diffusion furnace, the flux gun is used for the injection of process gas, by being set in the blind end close to the flux gun around side wall
1 to some groups jets are put, every group includes several spouts, make process gas after the flux gun is entered, can be in each institute
State nozzle radially to be sprayed by uniform divided flows, and cover and spray under the suction guide effect of diffusion furnace process duct exhaust outlet
The silicon chip surface that one group of the flux gun obliquely downward is disposed vertically, allows each silicon chip more simultaneously and evenly to touch work
Skill gas is to react, so as to effectively increase the uniformity of diffusion technique, reduces the influence of fluctuations to technological temperature.
To achieve the above object, technical scheme is as follows：
A kind of horizontal diffusion furnace containing air inlet flux gun, the flux gun level is located at semiconductor horizontal diffusion furnace technique
The oblique upper for the silicon chip that one group is disposed vertically side by side in pipe, the flux gun connects the air inlet pipe of the process duct, for technique
The injection of gas, is provided with the exhaust outlet of the process duct below the silicon chip, and the flux gun is the hollow of one end closing
Quartzy gun barrel, its openend is connected with the horizontal co-axial seal of the air inlet pipe, and the side wall of the flux gun is surround close to blind end
Provided with 1 to some groups jets, every group includes several described spouts, and each spout is equal around the radial direction of the flux gun
Even distribution, a spout is additionally provided with the center of flux gun blind end；Wherein, process gas enters institute by the air inlet pipe
State after flux gun, can radially be sprayed by uniform divided flows in each nozzle, and work is oriented in the suction of the exhaust outlet
The whole silicon chip surface of its obliquely downward is sprayed to lower covering, to improve the uniformity of diffusion technique.
Preferably, the flux gun has from the openend to the isometrical caliber of the blind end.
Preferably, the flux gun has the caliber from the openend to the blind end gradually downsizing smoothly.
Preferably, the hollow cross-section of the flux gun is any one in circular, ellipse, rectangle or regular polygon
Shape.
Preferably, the side wall close to the flux gun of the blind end is provided with some spouts, and the quantity of the spout is 4
~8, any one being shaped as in circle, ellipse, rectangle or regular polygon of the spout.
Preferably, the cross-sectional area sum of each spout is less than the hollow cross-section of the flux gun of the nozzle
Product.
Preferably, along the side-wall shaft of the flux gun close to the blind end to being provided with spout described in 1 to some groups,
The quantity of spout described in every group be 4~8, and around the flux gun radially uniform distribution, the spout be shaped as circle
Any one in shape, ellipse, rectangle or regular polygon.
Preferably, spout described in each group contracts successively in the axial spacing of the closing extreme direction towards the flux gun
It is small.
Preferably, the cross-sectional area sum of spout described in each group is less than closest to nozzle described in one group of the blind end
The flux gun hollow cross-section product.
Preferably, sealed and detachably connected using bulb and ball bowl fit system between the flux gun and the air inlet pipe
Connect, bulb and the ball bowl has the mating surface of mirror ultrafinish, can carry out mechanical seal.
It can be seen from the above technical proposal that the present invention pass through close to the flux gun blind end around side wall it is uniform
1 to some groups jets are set, and every group includes several spouts, make process gas after the flux gun is entered, can be each
The nozzle is radially sprayed by uniform divided flows；When the flux gun has one group of spout, by the transversal of jet
Area sum is designed to the cross-sectional area of the flux gun less than nozzle, when the flux gun has multigroup spout, by each group
The cross-sectional area sum of spout is designed to be less than the cross-sectional area of the flux gun closest to one group of nozzle of flux gun blind end,
It ensure that the pressure of injection gas is not suffered a loss；Process gas can under the suction guide effect of diffusion furnace process duct exhaust outlet,
Silicon chip surface is sprayed to form gas column scope bigger compared with the prior art, and each silicon chip can be carried out to whole coverings, makes each
Silicon chip can more simultaneously and evenly touch process gas to react, so as to effectively increase the uniform of diffusion technique
Property, reduce the influence of fluctuations to technological temperature；The bulb with mirror ultrafinish mating surface is used between flux gun and air inlet pipe
Seal and be detachably connected with ball bowl mode, realize and directly carry out mechanical seal, can effectively prevent the leakage of process gas, reduce
The frequency of flux gun dismounting, extends the service life of flux gun.Therefore, the present invention is improving the uniformity of diffusion technique,
Reduce on the basis of the influence of fluctuations to technological temperature, also improve utilization rate of equipment and installations simultaneously, reduce maintenance cost.
Brief description of the drawings
Fig. 1 is the gas delivery system working state schematic representation of existing semiconductor horizontal diffusion furnace；
Fig. 2 is arrangement and working state schematic representation of the air inlet flux gun of the present invention in horizontal diffusion furnace process duct；
Fig. 3 is the structural representation of the air inlet flux gun in one embodiment of the invention；
Fig. 4 is the partial structural diagram of the air inlet flux gun in another embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawings, the embodiment to the present invention is described in further detail.
It should be noted that in following embodiments, when embodiments of the present invention are described in detail, in order to clear
Ground represents the structure of the present invention in order to illustrate, spy, not according to general scale, and has carried out part to the structure in accompanying drawing
Amplification, deformation and simplified processing, therefore, should avoid being understood in this, as limitation of the invention.
Referring to Fig. 2, Fig. 2 is arrangement and working condition of the air inlet flux gun of the present invention in horizontal diffusion furnace process duct
Schematic diagram.As shown in Fig. 2 the present invention the air inlet flux gun 3 for diffusion furnace, with the prior art identical shown in Fig. 1
Mode is horizontally set in semiconductor horizontal diffusion furnace process duct 1, and the silicon chip 4 being vertically disposed in side by side in cassette positioned at one group
Oblique upper.The flux gun 3 is hollow quartzy gun barrel, and one end of flux gun 3 and the level of air inlet pipe 2 of the process duct 1 connect
Connect and connect, the injection for process gas.Exhaust outlet is provided with 1 time tube wall of process duct below the cassette for placing silicon chip 4
5.With prior art except that, flux gun 3 of the invention is one end open (left side of diagram flux gun 3), another end seal
The hollow quartzy gun barrel on (right side of diagram flux gun 3) is closed, its openend is connected with the horizontal co-axial seal of the air inlet pipe 2.Lean on
Nearly blind end is provided with 1 to some groups jets around the side wall of the flux gun 3, and every group includes several (figures of spouts 6
In exemplarily only mark 1 spout, ask subsequent reference Fig. 3, Fig. 4).
In one particular embodiment of the present invention, referring to Fig. 3, Fig. 3 is the air inlet quartz in one embodiment of the invention
The structural representation of rifle.As shown in figure 3, flux gun 3 is hollow quartzy gun barrel, an one end opening (left side for diagram flux gun
Side), other end closing (right side of diagram flux gun) forms blind end 7.Used with the diffusion furnace openend of the flux gun 3
Horizontal seal is coaxially connected by the way of bulb 8 is engaged with ball bowl 9 between the air inlet pipe 2 of injection technology gas and connects
It is logical.Total length is equal (i.e. from openend to the whole caliber of blind end 7 for isometrical) vertically for the caliber of the flux gun 3.It is described
The hollow cross-section of flux gun 3 can be any one shape in circular, ellipse, rectangle or regular polygon.In the present embodiment
In, the hollow cross-section of the flux gun 3 is using circular (i.e. tubular flux gun).
Please continue to refer to Fig. 3.In flux gun 3 some circle hole shape jets 6 are provided with close to the side wall of blind end 7.It is described
The quantity of spout 6 is optionally 4~8, preferably 4 spouts 6 of the present embodiment.Radial direction of the spout 6 around the flux gun 3
It is uniformly distributed, i.e., is symmetrically distributed in quartz by perpendicular to caliber direction, using the axle center of flux gun 3 as symmetrical centre as depicted
On the tube wall of rifle 3.When being injected due to process gas, there is loss in the pressure distribution in the pipe of flux gun 3, so, set each institute
The cross-sectional area sum for stating spout 6 should be less than the hollow cross-section product of the flux gun 3 at the spout 6.That is the present embodiment
In the cross-sectional area sums of 4 spouts 6 should be less than the hollow horizontal stroke of the flux gun 3 at the section by 4 centers of spout 6
Sectional area.If without this requirement, when process gas is flow at 4 spouts 6, the loss caused may be distributed due to pressure,
So that the pressure of the process gas sprayed from 4 spouts 6 is obviously reduced, so that flow is excessively reduced, it is difficult to ensure processing quality.
The shape of the spout 6 can be any one in circular, ellipse, rectangle or regular polygon, and this gives one kind
The example of circular spout 6.
As another implementation of above-described embodiment, can also separately it be opened in the center of the blind end 7 of flux gun 3
If 1 spout (not shown), the hole area of this spout can be consistent with a hole area of spout 6 of side, can also be smaller.
So, when process gas flow to the blind end 7 of flux gun 3, not reason blind end 7 be closed and cause airflow reflux and then
There is wild effect in the air-flow for causing 4 side spouts 6 to spray.Also, some processes gas can increase from flux gun blind end 7
If spout spray, can play a part of coordinate 4 spray technology gases of side spout 6, make the obliquely downward of flux gun 3 place
Each silicon chip can more uniformly touch process gas.
As the optional another implementation of above-described embodiment, with several spouts set positioned at the side wall of flux gun 3
(such as 4 spouts in above-described embodiment) be one group, can along the flux gun 3 axially arranged some groups of spouts, it is optional
Spout group number be 1~4 group, such as 3 groups.The quantity of spout is identical described in every group, is 4~8, such as 4, and equally surround
The radially uniform distribution of the flux gun 3.It is preferred that, spout described in each group is in the axial spacing towards the direction of blind end 7
Reduce successively (example of multigroup spout, asks subsequent reference Fig. 4 another embodiment to be understood not shown in figure).
Please continue to refer to Fig. 3.In the present embodiment, as a kind of optional mode, the flux gun 3 and the air inlet pipe
Horizontal seal is coaxially connected by the way of bulb 8 is engaged with ball bowl 9 between 2 and connects.As shown in Figure 3, it is contemplated that air inlet
The material of pipe 2 and flux gun 3 is generally all quartz material, therefore, is carried out using bulb 8 with the connected mode that ball bowl 9 is engaged
Connection between flux gun 3 and air inlet pipe 2.One ball, 9 structures of bowl, and opening in flux gun 3 are set in the spout part of air inlet pipe 2
Mouth end is provided with the structure of a bulb 8.When the openend of flux gun 3 is aligned into connection with the spout part of air inlet pipe 2, the ball being engaged
First 8 lateral surface can be mutually adjacent in the same direction with ball 9 medial surfaces of bowl, in the most of set goal bowl 9 of bulb 8.Then, (figure is pressed from both sides with bowl
Not shown in) both sides of ball bowl 9 are clamped, bowl folder simultaneously simultaneously extrudes bulb 8 to the inner side force of ball bowl 9, so that by ball bowl 9 and ball
First 8 are fixed, you can complete flux gun 3 and the connection of air inlet pipe 2.Meanwhile, can be to ball bowl when ball bowl 9 is processed with bulb 8
9 medial surfaces and the lateral surface of bulb 8 carry out mirror ultrafinish polishing, so, when ball bowl 9 is with 8 close fit of bulb, ball bowl 9 it is interior
The mirror effect formed between side and the lateral surface of bulb 8 using grinding directly forms mechanical seal, or else with using
Traditional fluorine-containing rubber sealing gasket is sealed, and can effectively prevent process gas from being let out from flux gun 3 and the connecting portion of air inlet pipe 2
Leakage, reduces the frequency that flux gun 3 is dismantled, and extends the service life of flux gun 3.In addition, can also be added to the tube wall of flux gun 3
Thickness, further to improve the service life of flux gun 3.
It please turn back to refer to Fig. 2 again.When by the flux gun 3 of Fig. 3 examples and air inlet pipe 2 using bulb 8 and ball bowl 9
When the mode being engaged connects and is arranged on the position shown in Fig. 2, process gas enters the flux gun 3 by the air inlet pipe 2
Afterwards, (jeting effect of approximate gondola water faucet) radially can be sprayed at each spout 6 by uniform divided flows, and in the exhaust
Under the suction guide effect of mouth 5, to form the silicon that the gas column form of the whole silicon chips 4 of covering sprays to the placement of its obliquely downward
The surface of piece 4 (as shown by arrows in FIG.).From figure 2 it can be seen that the gas column horizontal area formed in the present embodiment is much larger than Fig. 1
The gas column area (the gas column scope formed as shown in the upper arrow of silicon chip 4 in Fig. 2) of middle prior art, playing makes whole silicon chips 4
Substantially simultaneously uniform contact process gas carries out the good result of uniform diffusion reaction simultaneously.Simultaneously as process gas is multiple
Spout 6 is shunted, and will not form excessive air-flow, therefore, and the spout 6 of flux gun 3 can set closer to the distance from silicon chip 4,
Its apart from D2 be significantly less than in Fig. 1 apart from D1.Shortening apart from D2 has been greatly lowered process gas to be occurred in transmitting procedure
The probability of uncontrollable factor, and be easy to be precisely controlled air flow rate, pressure and other parameters, reduce the fluctuation of technological temperature.
Meanwhile, this also for the further reasonable design that coordinates between device hardware from now on and saves space and has laid in advantage.
As another embodiment of the present invention, referring to Fig. 4, Fig. 4 is the air inlet flux gun in another embodiment of the present invention
Partial structural diagram.As shown in figure 4, from unlike above-mentioned Fig. 3 embodiment, flux gun 3 have from openend (diagram
Left side) to the caliber of blind end 7 (right side of diagram) gradually downsizing smoothly, form the tapered tube configuration of diagram.Close to cone
The side wall of the blind end 7 of shape flux gun 3 is provided with such as 3 groups spouts 6, and the quantity of every group of spout 6 is, for example, 4.Every group of spout 6
Around the radially uniform distribution of the flux gun 3, axle of the spout 6 described in each group in the direction of blind end 7 towards the flux gun 3
Reduced successively to spacing.I.e. in the present embodiment, the spacing H1 of one group of spout on the left of diagram and one group of middle spout
More than the one group of spout and the spacing H2 of one group of spout on right side in the middle of diagram.Set by that analogy in spout group number increase
Put.
Due to process gas Fluid pressure can in the pipe of flux gun 3 linear loss, close to flux gun 3 openend spout
The nozzle of the relatively close position of blind end 7 of process gas pressure and flow at place is big.Therefore, the caliber of flux gun 3 is pressed
Design is gradually reduced, the loss that pressure reduces along journey can be balanced.Meanwhile, the cross-sectional area summation of all spouts 6 of each group,
It is less than one group of spout (one group of spout for being illustrated at the rightmost side) near the blind end 7 of flux gun 3 by its center
The hollow cross-section product of the flux gun 3 at section (illustrates the vertical centerline position of one group of nozzle of the rightmost side
The hollow cross-section product of flux gun 3).
It is connected and is arranged on by the way of the flux gun 3 of Fig. 4 examples is engaged with air inlet pipe 2 using bulb 8 with ball bowl 9
During position shown in Fig. 2, the above-mentioned design form of the present embodiment, can make the flow of process gas that is sprayed from each group spout 6 by
The direction from left to right of diagram reduces successively, and the gas column scope of the process gas formation sprayed from each group spout 6 is also by illustrating
Direction reduces successively from left to right, and forms the form coated layer by layer, so as to play the gas ejection effect of superposition, is formed
Gas column in gas homogeneity also can obtain further raising with respect to single group spout.So, the technique sprayed from each group spout 6
Gas can substantially arrive at each surface of silicon chip 4 simultaneously under the suction guide effect of process duct exhaust outlet 5, and relative to be formed
Prior art or the bigger gas column scope of Fig. 3 embodiment, carry out whole coverings, so as to enhance process gas by each silicon chip
Effectively utilize, improve the uniformity of diffusion technique.And gas is sprayed in the way of uniformly dissipating, the influence to technological temperature
It can be minimized by.The above-mentioned design form of the present embodiment can further improve the uniformity of injection gas, realize
Homogeneous reaction on silicon chip, improves reaction efficiency, saves the consumption of reacting gas.
Other aspects and the connection between process duct and seal form of the flux gun of the present embodiment can use with it is foregoing
Fig. 3 embodiment identical mode, therefore not reinflated explanation.
The present invention is can be seen that from the implementation of the invention exemplified by above-mentioned Fig. 3, Fig. 4 to pass through close to the stone
The blind end of English rifle is uniformly arranged 1 to some groups jets around side wall, and every group includes several spouts, process gas is existed
Into after the flux gun, can radially it be sprayed by uniform divided flows in each nozzle；There is one group in the flux gun
During spout, the cross-sectional area sum of jet is designed to the cross-sectional area of the flux gun less than nozzle, in the quartz
When rifle has multigroup spout, the cross-sectional area sum of each group spout is designed to be less than one group of spray closest to flux gun blind end
The cross-sectional area of flux gun at mouthful, it is ensured that the pressure of injection gas is not suffered a loss；Process gas can be in diffusion furnace process duct
Under the suction guide effect of exhaust outlet, silicon chip surface is sprayed to form bigger gas column scope compared with the prior art, and can will be respectively
Silicon chip carries out whole coverings, each silicon chip is more simultaneously and evenly touched process gas to react, so as to have
Effect improves the uniformity of diffusion technique, reduces the influence of fluctuations to technological temperature；Using tool between flux gun and air inlet pipe
The bulb and ball bowl mode for having mirror ultrafinish mating surface are sealed and are detachably connected, and are realized and are directly carried out mechanical seal, can be effective
The leakage of process gas is prevented, the frequency of flux gun dismounting is reduced, extends the service life of flux gun.Therefore, the present invention exists
The uniformity of diffusion technique is improved, reduces on the basis of the influence of fluctuations to technological temperature, also improves equipment utilization simultaneously
Rate, reduces maintenance cost.
Above-described is only the preferred embodiments of the present invention, the embodiment and the patent guarantor for being not used to the limitation present invention
Scope, therefore the equivalent structure change that every specification and accompanying drawing content with the present invention is made are protected, similarly be should be included in
In protection scope of the present invention.
Claims (10)
1. a kind of horizontal diffusion furnace containing air inlet flux gun, the flux gun level is located at semiconductor horizontal diffusion furnace process duct
The interior one group oblique upper of silicon chip that is disposed vertically side by side, the flux gun connects the air inlet pipe of the process duct, for process gas
The injection of body, is provided with the exhaust outlet of the process duct below the silicon chip, it is characterised in that the flux gun is an end seal
The hollow quartzy gun barrel closed, its openend is connected with the horizontal co-axial seal of the air inlet pipe, close to blind end around the quartz
The side wall of rifle is provided with 1 to some groups jets, and every group includes several described spouts, and each spout is around the flux gun
Radially uniform distribution, a spout is additionally provided with the center of flux gun blind end；Wherein, process gas is by the air inlet
Pipe enters after the flux gun, can radially be sprayed by uniform divided flows in each nozzle, and taking out in the exhaust outlet
The whole silicon chip surface that covering under guide effect sprays to its obliquely downward is inhaled, to improve the uniformity of diffusion technique.
2. the horizontal diffusion furnace according to claim 1 containing air inlet flux gun, it is characterised in that the flux gun has
From the openend to the isometrical caliber of the blind end.
3. the horizontal diffusion furnace according to claim 1 containing air inlet flux gun, it is characterised in that the flux gun has
From the openend to the caliber of the blind end gradually downsizing smoothly.
4. the horizontal diffusion furnace containing air inlet flux gun according to claims 1 to 3 any one, it is characterised in that institute
It is any one shape in circular, ellipse, rectangle or regular polygon to state the hollow cross-section of flux gun.
5. the horizontal diffusion furnace containing air inlet flux gun according to claims 1 to 3 any one, it is characterised in that lean on
The side wall of the flux gun of the nearly blind end is provided with some spouts, and the quantity of the spout is 4~8, the spout
It is shaped as any one in circular, ellipse, rectangle or regular polygon.
6. the horizontal diffusion furnace according to claim 5 containing air inlet flux gun, it is characterised in that the horizontal stroke of each spout
Sectional area sum is less than the hollow cross-section product of the flux gun of the nozzle.
7. the horizontal diffusion furnace containing air inlet flux gun according to claims 1 to 3 any one, it is characterised in that edge
Close to the blind end the flux gun side-wall shaft to being provided with spout described in 1 to some groups, the number of spout described in every group
Measure as 4~8, and around the radially uniform distribution of the flux gun, being shaped as the spout is circular, ellipse, rectangle or
Any one in regular polygon.
8. the horizontal diffusion furnace according to claim 7 containing air inlet flux gun, it is characterised in that spout exists described in each group
Reduced successively towards the axial spacing of the closing extreme direction of the flux gun.
9. the horizontal diffusion furnace according to claim 8 containing air inlet flux gun, it is characterised in that spout described in each group
Cross-sectional area sum is less than the hollow cross-section product closest to the flux gun of nozzle described in one group of the blind end.
10. the horizontal diffusion furnace according to claim 1 containing air inlet flux gun, it is characterised in that the flux gun with
Seal and be detachably connected using bulb and ball bowl fit system between the air inlet pipe, bulb and the ball bowl is ground with minute surface
The mating surface of mill, can carry out mechanical seal.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004281674A (en) * | 2003-03-14 | 2004-10-07 | Hitachi Kokusai Electric Inc | Heat treatment equipment and process for producing substrate |
| CN1832111A (en) * | 2005-03-09 | 2006-09-13 | 中国科学院半导体研究所 | Metal organic chemical vapour phase deposition reaction chamber structure for growing oxide film |
| CN201899961U (en) * | 2010-12-17 | 2011-07-20 | 青岛赛瑞达电子科技有限公司 | Pipeline device of tail gas treatment system of diffusion furnace |
| CN202167467U (en) * | 2011-08-17 | 2012-03-14 | 百力达太阳能股份有限公司 | Tail air spraying and diffusing apparatus used for solar energy battery |
| CN202830231U (en) * | 2012-09-11 | 2013-03-27 | 江阴鑫辉太阳能有限公司 | Flowing gas stabilizing device of crystalline silicon solar cell diffusion furnace |
-
2014
- 2014-11-06 CN CN201410643612.2A patent/CN104409392B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004281674A (en) * | 2003-03-14 | 2004-10-07 | Hitachi Kokusai Electric Inc | Heat treatment equipment and process for producing substrate |
| CN1832111A (en) * | 2005-03-09 | 2006-09-13 | 中国科学院半导体研究所 | Metal organic chemical vapour phase deposition reaction chamber structure for growing oxide film |
| CN201899961U (en) * | 2010-12-17 | 2011-07-20 | 青岛赛瑞达电子科技有限公司 | Pipeline device of tail gas treatment system of diffusion furnace |
| CN202167467U (en) * | 2011-08-17 | 2012-03-14 | 百力达太阳能股份有限公司 | Tail air spraying and diffusing apparatus used for solar energy battery |
| CN202830231U (en) * | 2012-09-11 | 2013-03-27 | 江阴鑫辉太阳能有限公司 | Flowing gas stabilizing device of crystalline silicon solar cell diffusion furnace |
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| CN104409392A (en) | 2015-03-11 |
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