WO2021227751A1 - Oxidation gas homogenizing cover with gas feeding uniformizing function - Google Patents
Oxidation gas homogenizing cover with gas feeding uniformizing function Download PDFInfo
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- WO2021227751A1 WO2021227751A1 PCT/CN2021/087149 CN2021087149W WO2021227751A1 WO 2021227751 A1 WO2021227751 A1 WO 2021227751A1 CN 2021087149 W CN2021087149 W CN 2021087149W WO 2021227751 A1 WO2021227751 A1 WO 2021227751A1
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- 230000003647 oxidation Effects 0.000 title abstract description 43
- 238000007254 oxidation reaction Methods 0.000 title abstract description 43
- 238000000265 homogenisation Methods 0.000 claims description 35
- 230000001590 oxidative effect Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 238000009279 wet oxidation reaction Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Definitions
- the invention relates to a homogenization cover for uniform intake oxidizing gas, which belongs to the fields of semiconductor technology, optical communication and optical storage.
- VCSEL Vertical Cavity Surface Emitting Laser
- the optical resonant cavity of the VCSEL is perpendicular to the substrate of the semiconductor chip, which can realize laser emission on the chip surface, and has the advantages of low threshold current, stable single-wavelength operation, easy high-frequency modulation, and easy two-dimensional integration.
- a typical VCSEL is a surface emitting structure.
- VCSEL includes many process flows, including material growth, epitaxial structure characterization, device fabrication, performance testing, and so on.
- a complete VCSEL device manufacturing process is mainly: material epitaxial growth ⁇ epitaxial structure characterization ⁇ device process (including epitaxial wafer cleaning, photolithography, etching, oxidation, insulating layer deposition, alloying, stripping, thinning, etc.) ⁇ after Department process ⁇ device characteristic test.
- oxidation is a key step in the device process flow. By controlling the oxidation process, oxides are formed in the areas where aluminum is relatively concentrated, and this oxide can be used to limit the current and light particles in the VCSEL to achieve the purpose of low threshold current.
- the purpose of the present invention is to provide a homogenization cover for uniform intake of oxidizing gas, which can help the sample to achieve the purpose of uniform oxidation.
- the technical scheme adopted by the present invention is: a uniform intake oxidizing gas homogenization cover, which is characterized in that it is a cube or hemispherical or arc-shaped cover formed by four sides and a top surface.
- the hoods are uniformly distributed with equal diameter vents.
- the side length of the side surface and the bottom surface is 60-220 mm, and the thickness is 1-15 mm.
- the radius of the bottom surface is 30-100 mm, and the height is 30-100 mm.
- the diameter of the vent holes is 1-25mm, and the aperture spacing is 2-5mm.
- the uniform air intake oxidation protection cover is made of quartz, stainless steel 316L, glass and other clean, non-oxidized materials that can withstand high temperatures above 500 degrees Celsius, and have a regular shape.
- the uniform inlet oxidation gas homogenization cover provided by the present invention can smoothly, stably and uniformly contact the surface of the wafer with the moisture brought in by N2 (carrier gas), and avoid oxidation caused by the turbulent flow of water and gas at the inlet or outlet or high temperature.
- N2 carrier gas
- the side and top surface of the cube or the hemispherical or arc-shaped cover are uniformly distributed with equal-diameter vents.
- the air inlet homogenization cover provided by the present invention makes the air inlet smooth, stable and uniform.
- the sample When oxidizing, the sample is placed in the homogenization cover, and the gas no longer flows through the sample in a single direction, but enters from the opening of the outer cover, ensuring The gas flowing through the sample comes from various apertures in different directions, and can make the water vapor fall on the surface of the wafer smoothly, so as to achieve the purpose of uniform and stable oxidation of the sample.
- Figure 1 Schematic diagram of VCSEL structure.
- Figure 2 VCSEL device process flow chart.
- Figure 3 Schematic diagram of the homogenization hood structure (cube) of uniform oxidizing gas inlet.
- Figure 4 Schematic diagram of the homogenization cover structure (hemispherical, arc-shaped) of uniform oxidizing gas inlet.
- Figure 5 Schematic diagram of the oxidation process when the sample is placed in a uniform inlet oxidizing gas homogenization hood (cube structure inlet homogenization hood).
- Figure 6 Schematic diagram of the oxidation process when the sample is placed in a uniform inlet oxidizing gas homogenization hood (hemispherical, arc-shaped inlet homogenization hood).
- the uniform intake oxidizing gas homogenization cover is made of quartz and is a cube composed of four sides and a top surface.
- the side and bottom sides have a side length of 160mm and a thickness of 3mm.
- Equivalently distributed vent holes with a diameter of 20mm and an aperture spacing of 3mm (aperture spacing of 3mm refers to the smallest distance between the edges of two adjacent vent holes, the same below).
- the preparation method is as follows: select quartz material, which can withstand a high temperature of 1300°C and can meet the demand.
- the quartz material is made into a cube shape without a base, with a side length of 160mm and a thickness of 3mm.
- a laser is used to process evenly distributed holes with a diameter of 20mm, with an aperture spacing of 3mm.
- the uniform intake oxidation gas homogenization cover is made of stainless steel 316L. It is a cube composed of four sides and one top surface. The four sides and one top surface are integrally formed. The side length and the bottom surface are 160mm in thickness. The diameter of the vent is 3mm, and the side and the top surface are evenly distributed with equal-diameter vent holes, the diameter of the vent holes is 8mm, and the aperture spacing is 2mm.
- the uniform intake oxidizing gas homogenization cover is made of glass and is a cube composed of four sides and a top surface.
- the side and bottom sides have a side length of 120mm and a thickness of 3mm.
- the vent holes of equal diameter are evenly distributed, the diameter of the vent holes is 8mm, and the hole spacing is 5mm.
- the uniform inlet oxidizing gas homogenization cover is made of quartz and has a hemispherical shape with a radius of 60mm. Equivalent vent holes are evenly distributed on the spherical surface. The diameter of the vent holes is 8mm and the aperture spacing is 3mm.
- This uniform air intake oxidizing gas homogenization cover is made of glass and is an arc cover.
- the radius of the bottom surface is 60mm and the height is 30mm.
- the spherical surface is evenly distributed with equal-diameter vent holes.
- the diameter of the vent holes is 8mm and the hole diameter is 8mm.
- the spacing is 3mm.
- Homogenizing hood for uniform intake of oxidizing gas can also be made into a dome-shaped hood or other regular shapes.
- Enlarging the volume of the hemispherical cover or arc-shaped cover appropriately can also achieve the effect of uniform and gentle oxidation. Its size is mainly limited by the size of the oxidation furnace, so it is more appropriate to limit it to the bottom radius of 30-100mm.
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Abstract
Disclosed is an oxidation gas homogenizing cover with a gas feeding uniformizing function, which is characterized in that the homogenizing cover is a cube formed by assembling or integrally forming four side surfaces and a top surface or a semispherical or arc shape without a bottom surface, and equal-diameter vent holes are uniformly distributed in the homogenizing cover. By means of the homogenizing cover, water vapor borne by N2 (a carrier gas) can be in contact with the surface of a wafer smoothly, stably and uniformly, such that non-uniform and unstable wet oxidation caused by an unstable airflow in an oxidation cavity due to water vapor turbulence or a high temperature at a gas inlet or a gas outlet is avoided. By means of the gas feeding homogenizing cover being capable of enabling gas feeding to be smooth, stable and uniform, a sample is placed inside the homogenizing cover during oxidation; gas does not flow through the sample from a single direction, but is fed in from opening holes of an outer cover, thus guaranteeing that the gas flowing through the sample comes from apertures in a variety directions; and water vapor can fall onto the surface of the wafer smoothly, thereby achieving the aim of the sample being stably oxidized at a constant speed.
Description
本发明涉及一种均匀进气氧化气体匀化罩，属于半导体技术、光通信和光存储领域。The invention relates to a homogenization cover for uniform intake oxidizing gas, which belongs to the fields of semiconductor technology, optical communication and optical storage.
自1977年，日本东京工业大学的伊贺健一提出垂直共振腔表面放射激光(Vertical Cavity Surface Emitting Laser,VCSEL)的概念开始，VCSEL各个方面的研究到现在均有很大的发展。VCSEL的光学谐振腔与半导体芯片的衬底垂直，能够实现芯片表面的激光发射，有阈值电流低、稳定单波长工作、易高频调制、易二维集成等优点。典型的VCSEL为面发射结构。Since 1977, Kenichi Iga of Tokyo Institute of Technology put forward the concept of Vertical Cavity Surface Emitting Laser (VCSEL), the research on all aspects of VCSEL has made great progress. The optical resonant cavity of the VCSEL is perpendicular to the substrate of the semiconductor chip, which can realize laser emission on the chip surface, and has the advantages of low threshold current, stable single-wavelength operation, easy high-frequency modulation, and easy two-dimensional integration. A typical VCSEL is a surface emitting structure.
VCSEL从材料到工艺，包含很多工艺流程，有材料生长、外延结构表征、器件制作、性能测试等。一个完整的VCSEL器件制作工艺流程主要是：材料外延生长→外延结构表征→器件工艺(包括外延片清洗、光刻、刻蚀、氧化、绝缘层沉积、合金化、剥离、减薄等)→后部工艺→器件特性测试。其中氧化是器件工艺流程中的关键步骤。通过控制氧化工艺过程，在铝比较集中的部位形成氧化物，而这种氧化物可以被用来限制VCSEL中的电流及光粒子，达到低阈值电流的目的。From material to process, VCSEL includes many process flows, including material growth, epitaxial structure characterization, device fabrication, performance testing, and so on. A complete VCSEL device manufacturing process is mainly: material epitaxial growth → epitaxial structure characterization → device process (including epitaxial wafer cleaning, photolithography, etching, oxidation, insulating layer deposition, alloying, stripping, thinning, etc.) → after Department process → device characteristic test. Among them, oxidation is a key step in the device process flow. By controlling the oxidation process, oxides are formed in the areas where aluminum is relatively concentrated, and this oxide can be used to limit the current and light particles in the VCSEL to achieve the purpose of low threshold current.
传统的氧化工艺是在刻蚀完成后，将样品放入氧化炉中，430℃下氧化20min。但这种传统方法存在一个问题：湿N2通入氧化炉腔体后，在正压的作用下，气体的流动方向具有明显的趋向性和不稳定性，从而导致氧化不均匀，样品在气体流动方向氧化对比于其他方向更显著。In the traditional oxidation process, after the etching is completed, the sample is placed in an oxidation furnace and oxidized at 430°C for 20 minutes. However, this traditional method has a problem: after the wet N2 is passed into the oxidation furnace cavity, under the action of positive pressure, the gas flow direction has obvious tendency and instability, which leads to uneven oxidation, and the sample flows in the gas. Directional oxidation is more pronounced than other directions.
发明内容Summary of the invention
本发明的目的在于提供一种均匀进气氧化气体匀化罩，可帮助样品达到均匀氧化的目的。The purpose of the present invention is to provide a homogenization cover for uniform intake of oxidizing gas, which can help the sample to achieve the purpose of uniform oxidation.
本发明采用的技术方案为：一种均匀进气氧化气体匀化罩，其特征在于：为四个侧面和一个顶面拼成或一体成型的正方体或者半球体状、弧形式罩，所述匀化罩都均匀分布有等径的通气孔。The technical scheme adopted by the present invention is: a uniform intake oxidizing gas homogenization cover, which is characterized in that it is a cube or hemispherical or arc-shaped cover formed by four sides and a top surface. The hoods are uniformly distributed with equal diameter vents.
优选的，所述匀化罩为正方体时，所述侧面和底面的边长为60-220mm，厚度为1-15mm。Preferably, when the homogenization cover is a cube, the side length of the side surface and the bottom surface is 60-220 mm, and the thickness is 1-15 mm.
优选的，所述匀化罩为半球形、弧形时，底面的半径为30-100mm，高度为30-100mm。Preferably, when the homogenization cover is hemispherical or arc-shaped, the radius of the bottom surface is 30-100 mm, and the height is 30-100 mm.
优选的，所述通气孔的直径为1-25mm，孔径间距2-5mm。Preferably, the diameter of the vent holes is 1-25mm, and the aperture spacing is 2-5mm.
优选的，所述均匀进气氧化保护罩采用石英、不锈钢316L、玻璃等洁净的、不易氧化、耐500摄氏度以上高温的材料制成，外形规则。Preferably, the uniform air intake oxidation protection cover is made of quartz, stainless steel 316L, glass and other clean, non-oxidized materials that can withstand high temperatures above 500 degrees Celsius, and have a regular shape.
本发明提供的均匀进气氧化气体匀化罩能将被N2(载气)带入的水气平缓、稳定均匀的接触晶圆表面，避免进气口或者出气口水气乱流或者高温造成的氧化腔体内气流不稳而造成的湿法氧化不均匀、不稳定。所述正方体侧面和顶面或者半球体状、弧形式罩都均匀分布有等径的通气孔。The uniform inlet oxidation gas homogenization cover provided by the present invention can smoothly, stably and uniformly contact the surface of the wafer with the moisture brought in by N2 (carrier gas), and avoid oxidation caused by the turbulent flow of water and gas at the inlet or outlet or high temperature. The uneven and unstable wet oxidation caused by the unstable airflow in the cavity. The side and top surface of the cube or the hemispherical or arc-shaped cover are uniformly distributed with equal-diameter vents.
本发明提供的进气匀化罩使进气平缓、稳定、均匀，氧化时将样品放置于匀化罩内，气体不再是从单一方向流过样品，而是从外罩的开孔进入，保证流过样品的气体来自各个不同方向孔径，且能使水汽平缓降落在晶圆表面，从而达到样品匀速稳定氧化的目的。The air inlet homogenization cover provided by the present invention makes the air inlet smooth, stable and uniform. When oxidizing, the sample is placed in the homogenization cover, and the gas no longer flows through the sample in a single direction, but enters from the opening of the outer cover, ensuring The gas flowing through the sample comes from various apertures in different directions, and can make the water vapor fall on the surface of the wafer smoothly, so as to achieve the purpose of uniform and stable oxidation of the sample.
图1：VCSEL结构示意图。Figure 1: Schematic diagram of VCSEL structure.
图2：VCSEL器件工艺流程图。Figure 2: VCSEL device process flow chart.
图3：均匀氧化气体进气匀化罩结构(正方体)示意图。Figure 3: Schematic diagram of the homogenization hood structure (cube) of uniform oxidizing gas inlet.
图4：均匀氧化气体进气匀化罩结构(半球型、弧形)示意图。Figure 4: Schematic diagram of the homogenization cover structure (hemispherical, arc-shaped) of uniform oxidizing gas inlet.
图5：样品放置于均匀进气氧化气体匀化罩进行氧化的过程示意图(正方体结构进气匀化罩)。Figure 5: Schematic diagram of the oxidation process when the sample is placed in a uniform inlet oxidizing gas homogenization hood (cube structure inlet homogenization hood).
图6：样品放置于均匀进气氧化气体匀化罩进行氧化的过程示意图(半球型、弧形进气匀化罩)。Figure 6: Schematic diagram of the oxidation process when the sample is placed in a uniform inlet oxidizing gas homogenization hood (hemispherical, arc-shaped inlet homogenization hood).
以下是结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。The following is a clear and complete description of the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
实施例1Example 1
本均匀进气氧化气体匀化罩，采用石英制成，为四个侧面和一个顶面拼成的正方体，所述侧面和底面的边长为160mm，厚度为3mm，所述侧面和顶面都均 匀分布有等径的通气孔，通气孔的直径为20mm，孔径间距3mm(孔径间距3mm是指相邻的两个通气孔的边缘之间最小的距离，以下同)。The uniform intake oxidizing gas homogenization cover is made of quartz and is a cube composed of four sides and a top surface. The side and bottom sides have a side length of 160mm and a thickness of 3mm. Equivalently distributed vent holes with a diameter of 20mm and an aperture spacing of 3mm (aperture spacing of 3mm refers to the smallest distance between the edges of two adjacent vent holes, the same below).
其制备方法为：选择石英材料，能承受1300℃高温，能满足需求。将石英材料做成没有底边的正方体形状，边长160mm，厚度3mm。在前后左右及上表面用激光器加工出均匀分布的直径20mm的孔，孔径间距3mm。The preparation method is as follows: select quartz material, which can withstand a high temperature of 1300°C and can meet the demand. The quartz material is made into a cube shape without a base, with a side length of 160mm and a thickness of 3mm. On the front, back, left, and right, and on the upper surface, a laser is used to process evenly distributed holes with a diameter of 20mm, with an aperture spacing of 3mm.
使用方法：100mm样品刻蚀工艺后，将样品放置氧化炉样品台上，将加工好的保护罩放置在样品上，430℃下氧化20min。氧化过程中开启样品台的旋转功能，进一步提高氧化的均匀性。氧化完成，取出样品后，清理样品台并将保护罩用酒精清洗干净，经过测量，与直接氧化，不采用匀化罩的100mm样品相比，100mm样品上、中、下、左、右五个点的氧化速率降低18.6％，均匀性由8％提高到4.3％。How to use: After the 100mm sample is etched, place the sample on the sample stage of the oxidation furnace, place the processed protective cover on the sample, and oxidize at 430°C for 20 minutes. Turn on the rotation function of the sample stage during the oxidation process to further improve the uniformity of oxidation. After the oxidation is completed, after taking out the sample, clean the sample table and clean the protective cover with alcohol. After measurement, compared with the 100mm sample without the homogenization cover, the 100mm sample has five upper, middle, lower, left and right sides. The point oxidation rate is reduced by 18.6%, and the uniformity is increased from 8% to 4.3%.
实施例2Example 2
本均匀进气氧化气体匀化罩，采用不锈钢316L制成，为四个侧面和一个顶面组成的正方体，四个侧面和一个顶面一体成型，所述侧面和底面的边长为160mm，厚度为3mm，所述侧面和顶面都均匀分布有等径的通气孔，通气孔的直径为8mm,孔径间距2mm。The uniform intake oxidation gas homogenization cover is made of stainless steel 316L. It is a cube composed of four sides and one top surface. The four sides and one top surface are integrally formed. The side length and the bottom surface are 160mm in thickness. The diameter of the vent is 3mm, and the side and the top surface are evenly distributed with equal-diameter vent holes, the diameter of the vent holes is 8mm, and the aperture spacing is 2mm.
使用方法：100mm样品刻蚀工艺后，将样品放置氧化炉样品台上，将加工好的保护罩放置在样品上，430℃下氧化20min。氧化过程中开启样品台的旋转功能，进一步提高氧化的均匀性。氧化完成，取出样品后，清理样品台并将保护罩用酒精清洗干净，经过测量，与不采用匀化罩的100mm样品相比，100mm样品上、中、下、左、右五个点的氧化速率降低19.6％，均匀性由8％提高到3.8％。How to use: After the 100mm sample is etched, place the sample on the sample stage of the oxidation furnace, place the processed protective cover on the sample, and oxidize at 430°C for 20 minutes. Turn on the rotation function of the sample stage during the oxidation process to further improve the uniformity of oxidation. After the oxidation is completed, after taking out the sample, clean the sample stage and clean the protective cover with alcohol. After measurement, the 100mm sample is oxidized at the top, middle, bottom, left, and right points of the 100mm sample compared with the 100mm sample without the homogenization cover The rate is reduced by 19.6%, and the uniformity is increased from 8% to 3.8%.
实施例3Example 3
本均匀进气氧化气体匀化罩，采用玻璃制成，为四个侧面和一个顶面拼成的正方体，所述侧面和底面的边长为120mm，厚度为3mm，所述侧面和顶面都均匀分布有等径的通气孔，通气孔的直径为8mm,孔径间距5mm。The uniform intake oxidizing gas homogenization cover is made of glass and is a cube composed of four sides and a top surface. The side and bottom sides have a side length of 120mm and a thickness of 3mm. The vent holes of equal diameter are evenly distributed, the diameter of the vent holes is 8mm, and the hole spacing is 5mm.
使用方法：100mm样品刻蚀工艺后，将样品放置氧化炉样品台上，将加工好的保护罩放置在样品上，430℃下氧化20min。氧化过程中开启样品台的旋转功能，进一步提高氧化的均匀性。氧化完成，取出样品后，清理样品台并将保护 罩用酒精清洗干净，经过测量，与不采用匀化罩的100mm样品相比，100mm样品上、中、下、左、右五个点的氧化速率降低19.2％，均匀性由8％提高到3.6％。How to use: After the 100mm sample is etched, place the sample on the sample stage of the oxidation furnace, place the processed protective cover on the sample, and oxidize at 430°C for 20 minutes. Turn on the rotation function of the sample stage during the oxidation process to further improve the uniformity of oxidation. After the oxidation is completed, after taking out the sample, clean the sample stage and clean the protective cover with alcohol. After measurement, the 100mm sample is oxidized at the top, middle, bottom, left, and right points of the 100mm sample compared with the 100mm sample without the homogenization cover The rate is reduced by 19.2%, and the uniformity is increased from 8% to 3.6%.
实施例4Example 4
本均匀进气氧化气体匀化罩，采用石英制成，为半径为60mm的半球形，球面上均匀分布有等径的通气孔，通气孔的直径为8mm,孔径间距3mm。The uniform inlet oxidizing gas homogenization cover is made of quartz and has a hemispherical shape with a radius of 60mm. Equivalent vent holes are evenly distributed on the spherical surface. The diameter of the vent holes is 8mm and the aperture spacing is 3mm.
使用方法：100mm样品刻蚀工艺后，将样品放置氧化炉样品台上，将加工好的保护罩放置在样品上，430℃下氧化20min。氧化过程中开启样品台的旋转功能，进一步提高氧化的均匀性。氧化完成，取出样品后，清理样品台并将保护罩用酒精清洗干净，经过测量，与不采用匀化罩的100mm样品相比，100mm样品上、中、下、左、右五个点的氧化速率降低17.4％，均匀性由8％提高到3.9％。How to use: After the 100mm sample is etched, place the sample on the sample stage of the oxidation furnace, place the processed protective cover on the sample, and oxidize at 430°C for 20 minutes. Turn on the rotation function of the sample stage during the oxidation process to further improve the uniformity of oxidation. After the oxidation is completed, after taking out the sample, clean the sample stage and clean the protective cover with alcohol. After measurement, the 100mm sample is oxidized at the top, middle, bottom, left, and right points of the 100mm sample compared with the 100mm sample without the homogenization cover The rate is reduced by 17.4%, and the uniformity is increased from 8% to 3.9%.
实施例5Example 5
本均匀进气氧化气体匀化罩，采用玻璃制成，为弧形罩，其底面的半径为60mm，高度为30mm，球面上均匀分布有等径的通气孔，通气孔的直径为8mm,孔径间距3mm。This uniform air intake oxidizing gas homogenization cover is made of glass and is an arc cover. The radius of the bottom surface is 60mm and the height is 30mm. The spherical surface is evenly distributed with equal-diameter vent holes. The diameter of the vent holes is 8mm and the hole diameter is 8mm. The spacing is 3mm.
使用方法：100mm样品刻蚀工艺后，将样品放置氧化炉样品台上，将加工好的保护罩放置在样品上，430℃下氧化20min。氧化过程中开启样品台的旋转功能，进一步提高氧化的均匀性。氧化完成，取出样品后，清理样品台并将保护罩用酒精清洗干净，经过测量，与不采用匀化罩的100mm样品相比，100mm样品上、中、下、左、右五个点的氧化速率降低18.6％，均匀性由8％提高到3.7％。How to use: After the 100mm sample is etched, place the sample on the sample stage of the oxidation furnace, place the processed protective cover on the sample, and oxidize at 430°C for 20 minutes. Turn on the rotation function of the sample stage during the oxidation process to further improve the uniformity of oxidation. After the oxidation is completed, after taking out the sample, clean the sample stage and clean the protective cover with alcohol. After measurement, the 100mm sample is oxidized at the top, middle, bottom, left, and right points of the 100mm sample compared with the 100mm sample without the homogenization cover The rate is reduced by 18.6%, and the uniformity is increased from 8% to 3.7%.
均匀进气氧化气体匀化罩也可以做成圆顶形罩或其他规则形状。Homogenizing hood for uniform intake of oxidizing gas can also be made into a dome-shaped hood or other regular shapes.
将半球形罩或弧形罩的体积适当放大，同样能起到均匀、平缓氧化的效果，其大小主要受限于氧化炉的大小，因此将其限制在底面半径30-100mm比较合适。Enlarging the volume of the hemispherical cover or arc-shaped cover appropriately can also achieve the effect of uniform and gentle oxidation. Its size is mainly limited by the size of the oxidation furnace, so it is more appropriate to limit it to the bottom radius of 30-100mm.
上述实实例为本发明的实施方式，但本发明的实施方式并不受上述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。The above-mentioned actual examples are the embodiments of the present invention, but the embodiments of the present invention are not limited by the above-mentioned examples, and any other changes, modifications, substitutions, combinations, and simplifications made without departing from the spirit and principle of the present invention, All should be equivalent replacement methods, and they are all included in the protection scope of the present invention.
Claims (6)
- 一种均匀进气氧化气体匀化罩，其特征在于：所述匀化罩为四个侧面和一个顶面拼成或一体成型的正方体或者无底面的半球形、弧形，所述匀化罩均匀分布有等径的通气孔。A homogenization hood for uniform intake oxidizing gas, characterized in that: the homogenization hood is a cube with four sides and a top surface joined or integrally formed, or a hemispherical or arc shape without a bottom surface. Evenly distributed vents of equal diameter.
- 根据权利要求1所述的均匀进气氧化气体匀化罩，其特征在于：所述匀化罩为正方体时，侧面和底面的边长为60-220mm。The uniform intake oxidizing gas homogenization cover according to claim 1, wherein when the homogenization cover is a cube, the side length and the bottom surface are 60-220mm.
- 根据权利要求1所述的均匀进气氧化气体匀化罩，其特征在于：所述匀化罩为半球形、弧形时，底面的半径为30-100mm，高度为30-100mm。The uniform intake oxidizing gas homogenization cover according to claim 1, wherein when the homogenization cover is hemispherical or arc-shaped, the radius of the bottom surface is 30-100 mm, and the height is 30-100 mm.
- 根据权利要求2所述的均匀进气氧化气体匀化罩，其特征在于：所述通气孔的直径为1-25mm，孔径间距2-5mm。The uniform intake oxidizing gas homogenization cover according to claim 2, wherein the diameter of the vent holes is 1-25mm, and the aperture spacing is 2-5mm.
- 根据权利要求1-3中任一项所述的均匀进气氧化气体匀化罩，其特征在于：所述匀化罩采用耐500℃以上高温的材料制成，外形规则。The homogenization cover for uniform intake oxidizing gas according to any one of claims 1 to 3, wherein the homogenization cover is made of materials resistant to high temperatures above 500° C., and has a regular shape.
- 根据权利要求5所述的均匀进气氧化气体匀化罩，其特征在于：所述匀化罩采用石英、不锈钢316L或玻璃制成。The homogenization cover for uniform intake oxidizing gas according to claim 5, wherein the homogenization cover is made of quartz, stainless steel 316L or glass.
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| CN202010409814.6 | 2020-05-14 | ||
| CN202020797067.3U CN211907391U (en) | 2020-05-14 | 2020-05-14 | Oxidizing gas homogenizing cover capable of uniformly feeding air |
| CN202010409814.6A CN111446190A (en) | 2020-05-14 | 2020-05-14 | Oxidizing gas homogenizing cover capable of uniformly feeding air |
| CN202020797067.3 | 2020-05-14 |
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| WO2021227751A1 true WO2021227751A1 (en) | 2021-11-18 |
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