CN110854047B - Process chamber and semiconductor processing equipment - Google Patents
Process chamber and semiconductor processing equipment Download PDFInfo
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- CN110854047B CN110854047B CN201911178813.9A CN201911178813A CN110854047B CN 110854047 B CN110854047 B CN 110854047B CN 201911178813 A CN201911178813 A CN 201911178813A CN 110854047 B CN110854047 B CN 110854047B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a process chamber, which relates to the technical field of semiconductor processes, and comprises: the air inlet mechanism is arranged in the cavity; the inner surface of the side wall of the cavity is a circumferential surface, the bottom of the cavity is provided with an exhaust port, and the air inlet mechanism is arranged at the top of the cavity; wherein, the air intake mechanism includes: the first air transmission pipelines are communicated with the air inlet mechanism; the air flow output by the first air transmission pipelines forms annular air flow around the axis of the cavity. The invention also provides semiconductor processing equipment. By adopting the process chamber, the concentration of the process gas on each part of the surface of the substrate is consistent, and the film forming uniformity of each area on the surface of the substrate is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to a process chamber and semiconductor processing equipment.
Background
In the diffusion process, the uniformity of the film thickness of the wafer is a very important process indicator, and the factors influencing the uniformity mainly include the temperature of the chamber and the concentration distribution of the process gas on the surface of the wafer. The temperature of the chamber is mainly adjusted by a temperature control system. The process gas is delivered to the wafer surface through the gas inlet system, and the concentration distribution of the process gas on the wafer surface is controlled by adjusting the flow direction, flow rate and the like of the process gas.
In the prior art, a wafer boat is arranged in a chamber, and a plurality of wafers are sequentially arranged on the wafer boat from top to bottom. The gas inlet in the chamber is located in the central region of the top wall of the chamber and faces vertically downward toward the wafer, so that the process gas is diffused into the chamber in a vertically downward manner after entering the chamber through the gas inlet system. However, due to the vertical downward gas inlet mode, the gas inlet is located in the central area of the top wall, so that when the process gas just enters the chamber, the flow rate of the center of the process gas is high, the process gas impacts the surface of the top wafer, and the flow rate of the process gas in the center of the surface of the wafer is high, the residence time is short, and the thickness of the film formed in the center of the top wafer is smaller than that of the film formed at the edge of the top wafer; in addition, the gap between the wafer and the side wall of the chamber is far larger than the gap between the wafers, that is, the flow rate of the process gas at the edge of the chamber is larger than that between the wafers, so that the concentration of the process gas (vertically and downwardly shunted) at the edge of the chamber is larger than that of the process gas horizontally flowing between the wafers, and therefore, on the same wafer, the film thickness at the edge of the wafer is larger than that at the center of the wafer, and the uniformity of the film formation of the wafer is poor.
Disclosure of Invention
The invention aims to at least solve one technical problem in the prior art, and provides a process chamber and semiconductor processing equipment.
To achieve the above object, the present invention provides a process chamber, comprising:
the air inlet mechanism is arranged in the cavity; the inner surface of the side wall of the cavity is a circumferential surface, the bottom of the cavity is provided with an exhaust port, and the air inlet mechanism is arranged at the top of the cavity; wherein, the air intake mechanism includes:
the first air transmission pipelines are communicated with the air inlet mechanism; the air flow output by the first air transmission pipelines forms annular air flow around the axis of the cavity.
Optionally, the airflow output by the first air transmission pipeline blows to the side wall of the cavity.
Optionally, the first gas transmission pipeline comprises a first gas transmission part and a second gas transmission part;
the first gas transmission part is respectively communicated with the gas inlet mechanism and the second gas transmission part, and a gas outlet of the second gas transmission part is formed as a gas outlet of the first gas transmission pipeline;
the airflow output by the second air transmission part is parallel to the tangential direction of a circumference, and the circumference is vertical to the axis of the cavity.
Optionally, the process chamber further comprises a second gas transmission pipeline, one part of the second gas transmission pipeline is arranged on the side wall of the cavity, and the other part of the second gas transmission pipeline is arranged above the gas inlet mechanism and communicated with the gas inlet of the gas inlet mechanism.
Optionally, the air inlet of the air inlet mechanism is located on the axis of the cavity.
Optionally, a plurality of third air transmission pipelines are further arranged on the side wall of the cavity, and the third air transmission pipelines are arranged along the height direction of the cavity;
the pipe wall of each third air transmission pipeline is provided with a plurality of vent holes, and the vent holes on the same third air transmission pipeline are in the same direction;
the air flow output by the plurality of third air pipelines forms annular air flow around the axis of the cavity.
Optionally, the plurality of third air delivery pipelines are uniformly distributed along the side wall of the cavity.
Optionally, an opening is formed in the bottom of the cavity, and the process chamber further includes a process door disposed at the opening; the process door is driven by the driving device to rotate or lift;
the process door is provided with a wafer boat used for bearing a substrate;
the bottom of the side wall of the cavity is provided with a boss, and the boss is arranged on the outer surface of the side wall of the cavity and connected with the process door through a flange piece;
and sealing rings are arranged between the boss and the flange piece and between the boss and the process door.
Optionally, the process chamber further comprises: the heat insulation structure is arranged on the process door, and the crystal boat is arranged on one side of the heat insulation structure, which is far away from the process door;
the part of the side wall of the cavity, which is close to the boss, is made of opaque quartz.
The invention also provides semiconductor processing equipment, wherein the semiconductor processing equipment comprises the process chamber.
The embodiment of the invention has the following beneficial effects:
by adopting the process chamber provided by the embodiment of the invention, the air flows output by the first air transmission pipelines form annular air flows around the axis of the cavity, and the exhaust port is arranged at the bottom of the cavity, so that the process gas in the cavity can move from top to bottom at the same time, namely, the process gas in the embodiment moves in a spiral descending manner in the cavity, the impact on the surface of the substrate during vertical blowing is avoided, the flow rates of the process gas in the same horizontal plane are consistent, the concentration of the process gas above each area on the surface of the substrate is consistent, and the uniformity of film forming on the substrate is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a top view of a chamber and an air inlet mechanism according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a chamber and an air inlet mechanism according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a cavity and a third gas transmission pipeline provided in an embodiment of the invention;
FIG. 4 is a top view of a cavity and a third gas transmission pipeline provided in an embodiment of the invention;
FIG. 5 is a schematic vertical sectional view of a process chamber provided in accordance with an embodiment of the present invention;
FIG. 6 is a schematic view of a bottom of a process chamber according to an embodiment of the invention.
Detailed Description
The following describes in detail embodiments of the present invention with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
An embodiment of the present invention provides a process chamber, where fig. 1 is a top view of a chamber and an air inlet mechanism provided in an embodiment of the present invention, and fig. 2 is a schematic structural diagram of the chamber and the air inlet mechanism provided in an embodiment of the present invention, as shown in fig. 1 and fig. 2, the chamber includes:
the air inlet mechanism comprises a cavity 1 and an air inlet mechanism 2 arranged in the cavity 1; the inner surface of the side wall of the cavity 1 is a circumferential surface, the bottom of the cavity 1 is provided with an exhaust port 3, and the air inlet mechanism 2 is arranged at the top of the cavity 1. Wherein, air intake mechanism 2 includes: the air inlet mechanism comprises a plurality of first air transmission pipelines 21, wherein the first air transmission pipelines 21 are communicated with the air inlet mechanism; the air flow output by the plurality of first air pipes 21 forms an annular air flow around the axis of the cavity 1.
Specifically, the air outlet direction of the first air transmission pipelines 21 can surround the axis of the cavity 1 along the preset hour direction, so that the air flow output by the first air transmission pipelines 21 forms an annular air flow around the axis of the cavity 1. Wherein, the preset hour hand direction is clockwise direction or anticlockwise direction. Wherein, "clockwise" and "counterclockwise" refer to: in the clockwise and counter-clockwise direction of the top view of the chamber 1. The phrase "the air outlet directions of the first air transmission pipelines 21 surround the axis of the cavity 1 along the preset hour direction" can mean that the direction of the initially output air from the air outlet of the first air transmission pipeline 21 is a curve, and can also mean that the air flows around the axis of the cavity 1 after being output from the air outlet of the first air transmission pipeline 21 along a straight line and contacting with the side wall.
By adopting the process chamber provided by the embodiment of the invention, as the gas flow output by the first gas transmission pipelines 21 forms the annular gas flow around the axis of the cavity 1, the process gas moves in the cavity 1 in a spiral descending manner, so that the impact of a vertical blowing manner on the surface of the substrate is avoided, and when the process gas moves in a spiral descending manner, the flow distribution of the process gas in the same horizontal plane is more uniform, so that the film forming uniformity of each area on the surface of the substrate is improved.
In some embodiments, as shown in FIG. 1, the air flow output from the first air delivery conduit 21 is blown towards the side wall of the chamber 1.
Specifically, the air outlet of the first air transmission pipeline 21 may face the side wall of the cavity 1. The embodiment of the present invention is explained by taking the counterclockwise direction as the preset hour hand direction, as shown in fig. 1, the process gas is output from the gas outlet of the first gas transmission pipeline 21, and then reaches the position a of the sidewall of the cavity 1 after going straight forward, the straight direction of the process gas output from the gas outlet of the first gas transmission pipeline 21 intersects with the tangential direction of the position a, and forms an included angle α and an included angle β, wherein the included angle β is greater than the included angle α, and therefore, the process gas flows in the counterclockwise direction at the position a. The plurality of first gas transmission pipelines 21 arranged in the above manner have the gas outlet direction of each first gas transmission pipeline 21 surrounding the axis of the cavity 1 along the counterclockwise direction, so that the process gas is pushed to advance along the counterclockwise direction, and the process gas circularly moves in the cavity 1 along the counterclockwise direction due to the inner surface of the cavity 1 being a circumferential surface, thereby forming annular gas flow surrounding the axis of the cavity 1. In the embodiment of the present invention, since the exhaust port is disposed at the bottom of the chamber 1, the process gas in the chamber 1 will flow to the bottom of the chamber 1 while making a circular motion, so that the process gas moves in a spiral descending manner in the chamber 1.
In some specific embodiments, each first air line 21 includes: a first gas transmission part 211 and a second gas transmission part 212. The first gas transmission part 211 is respectively communicated with the gas inlet mechanism 2 and the second gas transmission part 212, and the gas outlet of the second gas transmission part 212 is formed as the gas outlet of the first gas transmission pipeline 21. The second gas transmission portion 212 outputs a gas flow parallel to a tangential direction of a circumference perpendicular to the axis of the chamber 1.
In an embodiment of the present invention, the plurality of second air delivery parts 212 may all be located in the same horizontal plane, so that the air flow output by the second air delivery parts 212 is parallel to a tangential direction of a circumference. The air outlets of the first air transmission parts 211 can face the side wall, the included angle between the second air transmission parts 212 and the corresponding first air transmission parts 211 is 90 degrees, and the included angles between two adjacent first air transmission parts 211 can be the same, so that the air outlets of the first air transmission pipelines 21 are uniformly distributed on the same circumference.
Specifically, the number of the first air transmission pipelines 21 may be four, and the included angle between any two first air transmission parts 211 is 90 °, so that the four first air transmission parts 211 form a cross shape. It should be noted that in the embodiment of the present invention, the number of the first gas transmission pipelines 21 is not limited to four, and the specific number may be determined according to the process requirement. For example, the number of the first air transmission pipelines 21 can also be 3, and the included angle between any two first air transmission parts 211 is 120 °. Further, the first air transmission parts 211 and the second air transmission parts 212 of the plurality of first air transmission pipelines 21 can be located on the same horizontal plane, so that the space occupied by the air inlet mechanism 2 in the cavity 1 is reduced as much as possible.
In some embodiments, the inlet of the inlet means 2 is located on the axis of the chamber 1.
Specifically, the first gas transmission parts 211 may be straight pipes, and the gas inlet of each first gas transmission part 211 is located on the central axis of the chamber 1, forming the gas inlet 22 of the gas inlet mechanism 2.
As shown in fig. 2, in some embodiments, the process chamber further includes a second air transmission pipeline 4, a portion of the second air transmission pipeline 4 is disposed on the sidewall of the cavity 1, and another portion of the second air transmission pipeline 4 is disposed above the air inlet mechanism 2 and is communicated with the air inlet 22 of the air inlet mechanism 2.
Specifically, a part of the second gas transmission pipeline 4 may be disposed on the inner wall of the cavity 1, or may be disposed on the outer wall of the cavity 1. When a part of the second air transmission pipeline 4 is arranged on the inner wall of the cavity 1, the other part of the second air transmission pipeline 4 can be arranged on the top wall of the cavity 1, and the air inlet of the second air transmission pipeline 4 is arranged at the bottom of the cavity 1 and extends out of the cavity 1.
As the process proceeds, the concentration of the process gas changes in the height direction of the cavity 1, and therefore, in the embodiment of the present invention, a plurality of third gas transmission pipelines 5 are additionally provided to adjust the concentrations of the process gas at different heights in the cavity 1. Fig. 3 is a schematic structural diagram of a cavity and a third air delivery pipeline provided in an embodiment of the present invention, fig. 4 is a top view of the cavity and the third air delivery pipeline provided in the embodiment of the present invention, and as shown in fig. 3 and fig. 4, a plurality of third air delivery pipelines 5 are further disposed on a side wall of the cavity 1, and the third air delivery pipelines 5 are disposed along a height direction of the cavity 1.
The pipe wall of each third air transmission pipeline 5 is provided with a plurality of vent holes 51, and the vent holes 51 on the same third air transmission pipeline 5 have the same orientation. The air flow output by the plurality of third air transmission pipelines 5 forms annular air flow around the axis of the cavity 1.
Specifically, the air outlet direction of the third air transmission pipelines 5 can surround the axis of the cavity 1 along the preset hour direction, so that the air flow output by the third air transmission pipelines 5 forms an annular air flow around the axis of the cavity 1. Taking the preset hour hand as an anticlockwise direction as an example, the process gas flows along the anticlockwise direction after being output from the vent holes 51, and the gas outlet direction of the vent holes 51 of each third gas transmission pipeline 5 surrounds the axis of the cavity 1 along the anticlockwise direction, so that the process gas is pushed to advance along the anticlockwise direction, and the process gas circularly moves along the anticlockwise direction in the cavity 1 because the inner surface of the cavity 1 is a circumferential surface. In the embodiment of the present invention, since the exhaust port is disposed at the bottom of the chamber 1, the process gas in the chamber 1 will flow to the bottom of the chamber 1 while making a circular motion, that is, the process gas will move in a spiral descending manner in the chamber 1. It should be noted that the direction of the vent holes 51 in the third air delivery pipe 5 may be the same as the direction of the air outlets of the second air delivery part 212, that is, the axes of the plurality of vent holes 51 are all located in the tangential direction of the same circumference.
In some embodiments, the plurality of third air transmission pipelines 5 are evenly distributed along the side wall of the cavity 1.
Specifically, the number of the third air transmission pipelines 5 and the number of the vent holes 51 on the pipe wall of the third air transmission pipelines 5 can be determined according to actual needs, in this embodiment, the number of the third air transmission pipelines 5 and the number of the first air transmission pipelines 21 can be the same, and the positions of the third air transmission pipelines 5 can correspond to the positions of the first air transmission pipelines 21 one by one.
In some embodiments, for any third gas transmission pipeline 5, the sizes of the plurality of vent holes 51 disposed on the pipe wall thereof may be the same or different, and when the sizes of the plurality of vent holes 51 disposed on the pipe wall thereof are different, the actual size of each vent hole 51 may be determined according to the process requirements.
Fig. 5 is a schematic longitudinal sectional view of a process chamber according to an embodiment of the present invention, as shown in fig. 5, an opening is formed at the bottom of the chamber body 1, and the process chamber further includes a process door 6 disposed at the opening; the process door 6 is driven by the driving device to rotate or lift; the process door 6 is provided with a wafer boat 7, and the wafer boat 7 is used for bearing substrates. Fig. 6 is a schematic view of the bottom of the process chamber according to an embodiment of the present invention, and as shown in fig. 6, a boss 8 is disposed at the bottom of the sidewall of the chamber body 1, and the boss 8 is disposed on the outer surface of the sidewall of the chamber body 1 and connected to the process door 6 through a flange 9. A sealing ring 81 is arranged between the boss 8 and the flange part 9, and a sealing ring 82 is arranged between the boss 8 and the process door 6.
Specifically, when the process door 6 is lowered to an open state, the boat 7 can be detached or mounted on the process door 6, and when the process door 6 is raised to a closed state, the boat 7 can be fed into the chamber 1 to perform a process, and the opening at the bottom of the chamber 1 is sealed, so that heat energy in the chamber 1 is prevented from being dissipated, and process gas is prevented from leaking or external gas is prevented from entering. The flange piece 9 is used for connecting the cavity 1 and the process door 6, the flange piece 9 can be made of metal materials, and due to the fact that the metal is high in heat conductivity, if the flange piece 9 is directly contacted with the side wall of the cavity 1, heat in the cavity 1 is led out to the outside of the cavity through the flange piece 9, heat loss is caused, and the heat in the cavity 1 is fluctuated. Therefore, in the present embodiment, the boss 8 is disposed at the bottom of the cavity 1, so that the flange member 9 is spaced apart from the sidewall of the cavity 1, thereby preventing the flange member 9 from directly contacting the sidewall of the cavity 1. The sealing rings 81 and 82 may be O-rings, and the process gas in the chamber 1 may be prevented from leaking and the external gas may be prevented from entering the chamber 1 by the sealing rings 81 and 82.
In some embodiments, the process chamber further comprises: the heat insulation structure 10 is arranged on the process door 6, and the crystal boat 7 is arranged on one side of the heat insulation structure 10, which is far away from the process door 6. The material of the side wall of the chamber 1 near the boss 8 is opaque quartz.
Specifically, the insulation structure 10 includes: the support plate 10c, quartzy inserted sheet 10b, base 10d and a plurality of stand 10a, wherein, the support plate 10c sets up with base 10d relatively, insulation construction 10 passes through the base 10d and sets up on technology door 6, the setting of boat 7 deviates from one side of base 10d at the support plate 10c, the vertical setting of a plurality of stands 10a is between support plate 10c and base, quartzy inserted sheet 10b is through a plurality of stand 10a horizontal settings between support plate 10c and base 10d for play thermal-insulated effect.
As shown in fig. 6, a part (a part with a height H) of the cavity 1 above the boss 8 is made of opaque quartz, and because the opaque quartz has low thermal conductivity, heat in the cavity 1 can be prevented from affecting the sealing ring, and heat loss at the bottom of the cavity 1 can be prevented.
As shown in fig. 5, the process chamber further comprises: furnace body 11, furnace body 11 are used for holding cavity 1 to heat, and the bottom of furnace body 11 is provided with the opening, and the bottom of a part of cavity 1 extends furnace body 11 from the opening part of furnace body 11, exposes partial and technology door 6 of insulation construction 10 outside furnace body 11. The cavity 1 can be divided into 3 temperature zones, which are respectively: a constant temperature area where the crystal boat 7 is positioned, a top temperature area between the top of the constant temperature area and the top wall of the furnace body 11, and a bottom temperature area between the bottom of the constant temperature area and the opening of the furnace body 11. The temperature control module is used for detecting the temperature of the constant temperature area and sending the detected temperature to the temperature control module, so that the temperature control module can judge whether the temperature in the constant temperature area of the cavity 1 meets the process requirements or not. The heat preservation structure 10 can isolate the heat of the constant temperature area from diffusing to the bottom temperature area through the quartz insert, thereby preventing the temperature of the bottom temperature area from being too high, and avoiding the process door 6 and other components near the bottom temperature area from being affected by high temperature.
The embodiment of the invention also provides semiconductor processing equipment which comprises a process chamber, wherein the process chamber provided by the embodiment is adopted.
By adopting the semiconductor processing equipment of the embodiment of the invention, the process gas moves in a spiral descending manner in the cavity 1 of the process chamber, so that the impact on the surface of the substrate when a vertical blowing manner is adopted is avoided, and the flow rates of the spirally descending process gas in the same horizontal plane are consistent, namely, the process gas concentration at each position on the surface of the substrate is consistent, thereby improving the film forming uniformity at each position on the surface of the substrate. On the other hand, in the prior art, as the process gas flows vertically downwards, one part of the process gas is discharged out of the cavity 1 without being fully contacted with the substrate, so that the process gas takes away heat in the cavity 1, the temperature of the cavity 1 fluctuates, and the process effect is influenced.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. A process chamber is provided with a wafer boat, wherein the wafer boat is provided with a plurality of wafers which are sequentially arranged from top to bottom; the chamber includes:
the air inlet mechanism is arranged in the cavity; the inner surface of the side wall of the cavity is a circumferential surface, the bottom of the cavity is provided with an exhaust port, and the air inlet mechanism is arranged at the top of the cavity; characterized in that the air intake mechanism comprises:
the first air transmission pipelines are communicated with the air inlet mechanism; the air flow output by the first air transmission pipelines forms annular air flow around the axis of the cavity;
the process gas in the cavity flows to the bottom of the cavity while doing circular motion, the process gas moves in a spiral descending mode in the cavity, and the process gas can fully contact with the wafer to react;
the side wall of the cavity is also provided with a plurality of third air conveying pipelines which are arranged along the height direction of the cavity;
the pipe wall of each third air transmission pipeline is provided with a plurality of vent holes, and the vent holes on the same third air transmission pipeline are in the same direction;
the air flow output by the plurality of third air transmission pipelines forms annular air flow around the axis of the cavity;
the positions of the third air transmission pipelines correspond to the positions of the first air transmission pipelines one by one.
2. The process chamber of claim 1, wherein the gas flow output by the first gas line is blown towards the side wall of the cavity.
3. The process chamber of claim 1, wherein the first gas line comprises a first gas delivery portion and a second gas delivery portion;
the first gas transmission part is respectively communicated with the gas inlet mechanism and the second gas transmission part, and a gas outlet of the second gas transmission part is formed as a gas outlet of the first gas transmission pipeline;
the airflow output by the second air transmission part is parallel to the tangential direction of a circumference, and the circumference is vertical to the axis of the cavity.
4. The process chamber of claim 1 further comprising a second air delivery conduit, a portion of the second air delivery conduit being disposed on the sidewall of the cavity and another portion of the second air delivery conduit being disposed above the air intake mechanism and communicating with the air inlet of the air intake mechanism.
5. The process chamber of claim 1, wherein the gas inlet of the gas inlet mechanism is located on an axis of the cavity.
6. The process chamber of claim 1, wherein the plurality of third gas delivery conduits are distributed along a sidewall of the cavity.
7. The process chamber of any of claims 1-6, wherein the bottom of the chamber body is provided with an opening, the process chamber further comprising a process door disposed at the opening; the process door is driven by the driving device to rotate or lift;
the process door is provided with a wafer boat used for bearing a substrate;
the bottom of the side wall of the cavity is provided with a boss, and the boss is arranged on the outer surface of the side wall of the cavity and connected with the process door through a flange piece; and sealing rings are arranged between the boss and the flange piece and between the boss and the process door.
8. The process chamber of claim 7, further comprising: the heat insulation structure is arranged on the process door, and the crystal boat is arranged on one side of the heat insulation structure, which is far away from the process door; the part of the side wall of the cavity, which is close to the boss, is made of opaque quartz.
9. A semiconductor processing apparatus comprising the process chamber of any of claims 1-8.
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| CN201911178813.9A CN110854047B (en) | 2019-11-27 | 2019-11-27 | Process chamber and semiconductor processing equipment |
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| CN201911178813.9A CN110854047B (en) | 2019-11-27 | 2019-11-27 | Process chamber and semiconductor processing equipment |
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| CN110854047A CN110854047A (en) | 2020-02-28 |
| CN110854047B true CN110854047B (en) | 2022-08-16 |
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| CN111725102B (en) * | 2020-06-18 | 2023-07-14 | 北京北方华创微电子装备有限公司 | Furnace tube in semiconductor process equipment and semiconductor process equipment |
| CN111947450A (en) * | 2020-08-24 | 2020-11-17 | 北京北方华创微电子装备有限公司 | Semiconductor chamber and annealing device |
| CN112359422B (en) * | 2020-10-15 | 2023-06-16 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor processing equipment |
| CN112490147B (en) * | 2020-11-10 | 2023-06-16 | 北京北方华创微电子装备有限公司 | Vertical heat treatment equipment |
| CN113299589A (en) * | 2021-05-14 | 2021-08-24 | 北京北方华创微电子装备有限公司 | Semiconductor heat treatment equipment and adjusting device and adjusting method thereof |
| CN113380672A (en) * | 2021-06-08 | 2021-09-10 | 北京北方华创微电子装备有限公司 | Semiconductor heat treatment equipment |
| CN116752122A (en) * | 2023-06-21 | 2023-09-15 | 上海稷以科技有限公司 | Semiconductor processing equipment and mounting method |
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