CN111952233A - Edge purging device, pedestal system and process chamber - Google Patents
Edge purging device, pedestal system and process chamber Download PDFInfo
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- CN111952233A CN111952233A CN201910400446.6A CN201910400446A CN111952233A CN 111952233 A CN111952233 A CN 111952233A CN 201910400446 A CN201910400446 A CN 201910400446A CN 111952233 A CN111952233 A CN 111952233A
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- edge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Abstract
The invention provides an edge purging device, a pedestal system and a process chamber, wherein the edge purging device is used for purging the edge of a substrate loaded on a pedestal, and comprises: a purge channel and a gas source; wherein, the gas outlet of sweeping the passageway sets up along the circumference of base, and the direction of giving vent to anger of gas outlet for vertical direction towards the base slope. By the invention, the uniformity of etching or deposition at the edge of the substrate can be improved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an edge purging device, a base system and a process chamber.
Background
Currently, in the manufacturing process of integrated circuits, especially in the chemical vapor deposition (hereinafter abbreviated as CVD) process, a vacuum chuck is often used to fix the wafer in order to avoid the wafer moving or dislocating during the process.
In some CVD processes, the reactive gases may deposit on the backside and sidewalls of the wafer. When the thickness reaches a certain degree, cracking and falling phenomena and particle problems may occur, thereby causing damage and failure of the wafer and affecting the performance of the device.
In order to protect the edge of the wafer from being contacted by the reaction gas to cause deposition or etching, a gas protection measure is often introduced at the edge of the wafer above the vacuum chuck. However, if the edge protection gas is not properly blown, the etching or deposition characteristics of the edge portion of the front surface of the wafer are affected, and the uniformity of etching or deposition at the edge of the wafer is poor.
Disclosure of Invention
The invention aims to at least solve one technical problem in the prior art, and provides an edge purging device, a base system and a process chamber, so as to improve the edge etching or deposition uniformity of a substrate.
To achieve the object of the present invention, there is provided an edge purge apparatus for purging an edge of a substrate supported on a susceptor, the purge apparatus comprising: a purge channel and a gas source; wherein the content of the first and second substances,
the gas outlet of the purging channel is arranged along the circumferential direction of the base, and the gas outlet direction of the gas outlet is inclined towards the base relative to the vertical direction;
the gas source is used for providing purge gas to the purge passage.
Preferably, the air outlet direction of the air outlet is along the horizontal direction; or the air outlet direction of the air outlet is inclined upwards or downwards relative to the vertical direction.
Preferably, the method further comprises the following steps: an air intake line;
the air inlet pipeline is communicated with the purging channel and the air source and used for conveying the purging gas from the air source to the purging channel.
Preferably, the method further comprises the following steps:
a temperature control structure;
the temperature control structure is sleeved on the air inlet pipeline and used for controlling the temperature of the sweeping gas in the air inlet pipeline.
Preferably, the temperature control structure comprises: temperature control pipe and accuse temperature source, wherein:
the temperature control source is used for providing a temperature control medium for the temperature control pipe, the temperature control pipe is sleeved on the air inlet pipeline, and a temperature control medium input pipeline and a temperature control medium output pipeline are arranged in the temperature control pipe.
Preferably, the temperature control structure comprises: the temperature control zone is sleeved on the air inlet pipeline.
A pedestal system, comprising: a base and an edge purge apparatus as described herein; the base is used for bearing a substrate, and the edge purging device is used for purging the edge of the substrate.
Preferably, the method further comprises the following steps: an edge ring surrounding the base;
an annular gap between the inner peripheral wall of the edge ring and the outer peripheral wall of the base forms the purge passage.
Preferably, the edge ring comprises an annular body and an annular boss arranged at the top of the annular body and facing the pedestal, and the lower surface of the annular boss is arranged at an angle to the vertical direction.
Preferably, the inner edge of the lower end face of the annular boss is not higher than the upper surface of the substrate.
Preferably, the lower surface and the upper surface of the annular boss form an angle of 90 degrees with the vertical direction;
the lower surface of the annular boss is lower than the upper surface of the substrate, and the upper surface of the annular boss is higher than the upper surface of the substrate.
Preferably, the height difference between the upper surface of the annular boss and the upper surface of the substrate ranges from 1.5mm to 5 mm.
Preferably, the substrate processing apparatus further comprises a first edge ring and a second edge ring surrounding the susceptor, the purge channel is disposed between the first edge ring and the second edge ring, and the gas outlet of the purge channel is located at a position not higher than the upper surface of the substrate.
Preferably, the outer diameter of the susceptor is larger than the diameter of the substrate.
Preferably, thermal insulation and/or a thermal barrier coating is provided on the bottom and side walls of the base.
A process chamber having a susceptor disposed therein for supporting a substrate, comprising an edge purge apparatus as described herein for purging an edge of the substrate.
The invention has the following beneficial effects:
the edge purging device, the base system and the process chamber provided by the invention are provided with the purging channel and the gas source, the gas outlet of the purging channel is arranged along the circumferential direction of the base, and the gas outlet direction of the gas outlet is inclined towards the base relative to the vertical direction; the gas source is used for providing purge gas for the purge channel; the sweeping gas blown out from the sweeping channel can be directly swept to the edge of the substrate, so that the sweeping gas can only sweep the edge of the substrate, the influence of the sweeping gas on the edge process gas above the substrate is reduced, the problem of reduction of edge etching or deposition rate caused by the influence of the edge sweeping gas on the process gas distribution at the edge position of the substrate is solved, and the uniformity of the edge etching or deposition of the substrate is improved.
Drawings
FIG. 1 is a schematic structural diagram of an edge purging device according to an embodiment of the present invention;
FIG. 2 is a schematic view of another structure of an edge purging device according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a temperature control structure in an embodiment of the present invention;
FIG. 4 is a top view of a temperature control structure in an embodiment of the present invention;
FIG. 5 is a schematic diagram of a base system according to an embodiment of the present invention;
FIG. 6 is a schematic structural view of an annular boss in an embodiment of the present invention;
FIG. 7 is a schematic view of another embodiment of a base system according to the present invention;
FIG. 8 is a schematic view of the air outlet direction of the air outlet of the purge channel in the embodiment of the present invention;
FIG. 9 shows the actual travel pattern of the process gas and the purge gas at the edge of the substrate after the practice of the present invention.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, the edge purging device, the susceptor system and the process chamber provided by the present invention are described in detail below with reference to the accompanying drawings.
Example one
An embodiment of the present invention provides an edge purging device for purging an edge of a substrate 2 supported on a susceptor 1, as shown in fig. 1, the edge purging device includes: purge channel 3 and gas source (not shown); the gas outlet of the purging channel is arranged along the circumferential direction of the base 1, and the gas outlet direction of the gas outlet is inclined towards the base 1 relative to the vertical direction; the gas source is used to supply purge gas to the purge channel 3.
Particularly, the purging device provided by the invention can purge the edge of the substrate when the substrate is processed, so as to improve the uniformity of gas before reaction in the process.
The edge purging device provided by the embodiment of the invention is provided with the purging channel and the gas source, wherein the gas outlet of the purging channel is arranged along the circumferential direction of the base, and the gas outlet direction of the gas outlet is inclined towards the base relative to the vertical direction; the gas source is used for providing purge gas for the purge channel; the sweeping gas blown out from the sweeping channel can be directly swept to the edge of the substrate, so that the sweeping gas can only sweep the edge of the substrate, the influence of the sweeping gas on the edge process gas above the substrate is reduced, the problem of reduction of edge etching or deposition rate caused by the influence of the edge sweeping gas on the process gas distribution at the edge position of the substrate is solved, and the uniformity of the edge etching or deposition of the substrate is improved.
Specifically, the air outlet direction of the purge channel 3 is in the horizontal direction, or the air outlet direction of the purge channel 3 is inclined upward or downward with respect to the vertical direction. Referring to fig. 1, the air outlet direction of the purge channel 3 is in the horizontal direction. The width of the general purging channel 3 is set to be 1-2 mm. In another embodiment of the present invention, the gas outlet direction of the purge channel 3 may be perpendicular to the tangent of the substrate 2, and the gas outlet direction may also be not perpendicular to the tangent of the substrate 2, but form any angle with the tangent of the substrate 2, which is more favorable for preventing the purge gas from upwardly affecting the reaction gas on the edge of the upper surface of the substrate.
Specifically, the purging channel 3 around the base 1 may be an open structure or a mesh structure. In this embodiment, the arrangement of the purge channel 3 can reduce the distortion of the gas flow around the substrate, and improve the uniformity of the gas flow distribution.
Example two
Aiming at the problem of the reduction of the etching rate of the edge of the substrate in the prior art, the temperature of the purging gas can be controlled to be lower than the set temperature of the base 1, when the purging gas is blown to the edge of the substrate, the edge of the substrate can be cooled to a certain degree, after the temperature is reduced, the etching rate is improved, and the uniformity is improved.
As shown in fig. 2, another schematic structural diagram of an edge purging device according to an embodiment of the present invention is provided, and in this embodiment, relative to the embodiment shown in fig. 1, the edge purging device further includes: an air intake line 4.
The inlet line 4 communicates the purge channel 3 with a gas source (not shown) for delivering purge gas from the gas source into the purge channel 3. In this embodiment, can realize easily that the air supply sweeps the passageway with the entering of different directions through setting up the air inlet pipeline, further, can also be convenient for heat up or will cool down the processing to the gas in the air supply according to the structure of air inlet pipeline.
Further, in another embodiment of the present invention, as shown in fig. 2, 3 and 4, the edge purging device further includes: a temperature control structure 5.
The temperature control structure 5 is sleeved on the air inlet pipeline and used for controlling the temperature of the sweeping gas in the air inlet pipeline.
Specifically, the temperature control structure 5 includes: a temperature control tube 51 and a temperature control source (not shown), wherein:
the temperature control source is used to provide a temperature control medium to the temperature control tube 51, and the temperature control medium may be water or other gas or liquid medium capable of realizing temperature control. The temperature control pipe 51 is sleeved on the air inlet pipeline, and a temperature control medium input pipeline 52 and a temperature control medium output pipeline 53 are arranged in the temperature control pipe. The temperature control tube 51 may be a square, two metal blocks that may be snapped together, and the material of the metal blocks may be aluminum or stainless steel.
The temperature control range of the temperature control source is wide, temperature control of-20-100 ℃ can be usually realized, and the compensation temperature value of the purge gas can be adjusted through different refrigerators according to the actual etching or deposition requirements.
Further, in another embodiment of the present invention, the temperature control structure includes: the temperature control zone is sleeved on the air inlet pipeline, and the temperature control zone can be a heating zone. It should be noted that, when only high-temperature gas compensation is needed, the temperature control structure can adopt the above temperature control manner alone, that is, a temperature control band for controlling temperature is wound on the air inlet pipeline 4, and the temperature control range of the temperature control band is usually from room temperature (e.g. 25 ℃) to 150 ℃.
Further, when the purge channel 3 is at the periphery of the susceptor 1 as shown in fig. 2, the susceptor 1 needs to be thermally insulated to prevent the related temperature influence between the purge gas and the susceptor 1, and generally the susceptor 1 and the purge gas need to be maintained at different temperatures. In order to protect the susceptor 1 from the heating temperature of the purge channel 3, heat insulators 6 and/or heat insulating coatings are provided on the bottom and side walls of the susceptor 1.
Specifically, the material of the heat insulating member 6 includes resin or ceramic. The thickness of the thermal insulation 6 is typically 5 mm. In this embodiment, the base can be effectively protected by providing the resin or ceramic having poor heat conduction on the bottom and the side wall of the base, so that the base is not affected by the temperature of the gas in the purge passage.
Specifically, the material of the thermal barrier coating comprises ceramic or teflon. Typically, the thermal barrier coating has a thickness of about 300 um. In the embodiment, the heat insulation coating is arranged on the bottom and the side wall of the base, so that the base can be effectively protected and is not influenced by the temperature of the gas in the purging channel.
The purging device provided by the embodiment of the invention carries out temperature control transformation on the air inlet pipeline so as to realize temperature control on air flow, and utilizes the difference characteristic of etching or deposition on temperature to improve (reduce) the etching or deposition rate of the edge position of the substrate so as to achieve the aim of improving uniformity.
EXAMPLE III
To the above edge purging device, the present invention further provides a pedestal system, comprising: the edge purging device provided by the base 1 and any of the above embodiments; wherein, the base 1 is used for carrying the substrate 2, and the edge purging device is used for purging the edge of the substrate 2.
Specifically, the outer diameter of the susceptor 1 is larger than the diameter of the substrate 2. The radius of the susceptor 1 is generally larger than the radius of the substrate 2 by at least 3 to 5mm, and the diameter of the susceptor 1 is generally set to 306 to 310 mm.
According to the base system provided by the embodiment of the invention, the edge of the substrate is swept by the edge sweeping device, so that the problem of edge etching or deposition rate reduction caused by influence of edge sweeping airflow on the process gas distribution at the edge position of the substrate can be solved, and the uniformity of etching or deposition is improved.
Example four
Fig. 5 is a schematic structural diagram of a base system according to an embodiment of the present invention, including: a base 1, an edge purging device and an edge ring 7 surrounding the base 1; an annular gap between the inner peripheral wall of the edge ring 7 and the outer peripheral wall of the susceptor 1 forms the purge channel 3.
Specifically, the edge ring 7 includes an annular body 71 and an annular boss 72 provided at the top thereof and facing the base, the lower surface of the annular boss 72 being disposed at an angle to the vertical direction. The annular projection 72 covers the entire purge passage 3, and the annular projection 72 functions to change the purge gas from a vertical upward direction to a horizontal direction in fig. 5 while preventing the substrate 2 from slipping off the susceptor 1. In FIG. 6, the width w of the annular protrusion 72 is set within 2-5 mm, and the height h is set within 3-5 mm.
Further, the inner edge 721 of the lower end face of the annular projection 72 is not higher than the upper surface of the substrate 2.
Further, as shown in fig. 5 and 6, the lower surface and the upper surface of the annular boss 72 are both at an angle of 90 degrees to the vertical direction.
The lower surface of the annular projection 72 is lower than the upper surface of the substrate 2, and the upper surface of the annular projection 72 is higher than the upper surface of the substrate 2.
Specifically, the height difference between the upper surface of the annular boss 72 and the upper surface of the substrate 2 ranges from 1.5mm to 5 mm. In this embodiment, the height difference between the upper surface of the annular boss and the upper surface of the substrate is set to be 1.5 mm-5 mm, so that the height of the annular boss in the vertical direction is not too high, and the uniformity of gas distribution in the process is not affected.
In summary, in the base system provided by the embodiment of the invention, the purging channel is formed between the inner peripheral wall of the edge ring and the outer peripheral wall of the base, and the base system is simple in structure and easy to implement; further, by setting the width and height of the annular boss on the edge ring, the gas in the purge channel can be easily purged to the edge of the substrate.
EXAMPLE five
Fig. 7 is a schematic structural diagram of a base system according to an embodiment of the present invention, which includes: the wafer cleaning device comprises a base 1, an edge purging device, a first edge ring 8 and a second edge ring 9 surrounding the base, a purging channel 3 is arranged between the first edge ring 8 and the second edge ring 9, and a gas outlet of the purging channel 3 is positioned at a position which is not higher than the upper surface of a substrate 2.
Further, the gas outlet direction of the gas outlet of the purge channel 3 may be inclined upward toward the susceptor 2 with respect to the vertical direction as shown in fig. 7; or may be inclined downwardly with respect to the vertical direction toward the base 2 as shown in fig. 8.
In summary, in the susceptor system according to the embodiment of the present invention, the purge channel is disposed between the first edge ring and the second edge ring, and the structure of the purge channel is changed by disposing the first edge ring and the second edge ring, so that the purge channel is easily implemented.
EXAMPLE six
The invention also provides a process chamber, which is internally provided with a base used for bearing the substrate, and also comprises an edge purging device in any one of the embodiments, wherein the edge purging device is used for purging the edge of the substrate.
The process chamber provided by the embodiment of the invention can enable the purge gas to purge only the edge of the substrate, reduce the influence of the purge gas on the impact of the process gas on the edge above the substrate, solve the problem of reduced edge etching or deposition rate caused by the influence of the edge purge gas on the process gas distribution at the edge position of the substrate, and improve the uniformity of the edge etching or deposition of the substrate.
In the prior art, the purge gas passes through the side wall of the edge of the substrate from bottom to top and needs to be supplied uninterruptedly, when the process gas flowing through the surface of the substrate reaches the position near the edge of the substrate, the process gas deflects upwards due to the impact force of the purge gas vertically upwards to form an airflow distortion area, the content of the process gas at the edge of the substrate in the area is reduced, and the process uniformity is affected. While FIG. 9 shows the actual travel pattern of the process gas and purge gas at the edge of the substrate after the present invention has been implemented, compared to the prior art, since the edge purge face blows gas against the sidewall of the substrate, only a portion of the gas flow bounces off the purge channel formed by the edge of the substrate and the edge ring. Although the rebound edge purge gas also has some effect on the process gas, the area of influence is further from the edge of the substrate, as shown by the gas distortion trend within the box in fig. 9, the range is reduced and the area of influence is closer to the edge of the substrate, thereby reducing the effect on the position of the edge of the substrate. The purging device and the process chamber provided by the invention have two advantages, namely, the impact force on the process gas vertically upwards can be reduced, and the influence range on the process gas is further away from the substrate; and secondly, the consumption of the purge gas can be greatly reduced, the aim of etching or depositing the side wall of the substrate can be fulfilled only by introducing less edge purge gas, and the cost is saved. It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (16)
1. An edge purge apparatus for purging an edge of a substrate supported on a pedestal, the edge purge apparatus comprising: a purge channel and a gas source; wherein the content of the first and second substances,
the gas outlet of the purging channel is arranged along the circumferential direction of the base, and the gas outlet direction of the gas outlet is inclined towards the base relative to the vertical direction;
the gas source is used for providing purge gas to the purge passage.
2. The edge blowing device of claim 1, wherein the gas outlet direction of the gas outlet is along a horizontal direction; or the air outlet direction of the air outlet is inclined upwards or downwards relative to the vertical direction.
3. The edge purge apparatus of claim 1 or 2, further comprising: an air intake line;
the air inlet pipeline is communicated with the purging channel and the air source and used for conveying the purging gas from the air source to the purging channel.
4. The edge purge apparatus of claim 3, further comprising:
a temperature control structure;
the temperature control structure is sleeved on the air inlet pipeline and used for controlling the temperature of the sweeping gas in the air inlet pipeline.
5. The edge purge apparatus of claim 4, wherein the temperature control structure comprises: temperature control pipe and accuse temperature source, wherein:
the temperature control source is used for providing a temperature control medium for the temperature control pipe, the temperature control pipe is sleeved on the air inlet pipeline, and a temperature control medium input pipeline and a temperature control medium output pipeline are arranged in the temperature control pipe.
6. The edge purge apparatus of claim 4, wherein the temperature control structure comprises: the temperature control zone is sleeved on the air inlet pipeline.
7. A pedestal system, comprising: a base and the edge purge apparatus of any of claims 1-6; the base is used for bearing a substrate, and the edge purging device is used for purging the edge of the substrate.
8. The pedestal system according to claim 7, further comprising: an edge ring surrounding the base;
an annular gap between the inner peripheral wall of the edge ring and the outer peripheral wall of the base forms the purge passage.
9. The susceptor system of claim 8, wherein the edge ring comprises an annular body and an annular boss disposed at a top thereof and facing the susceptor, a lower surface of the annular boss being disposed at an angle to vertical.
10. The susceptor system of claim 9, wherein an inner edge of a lower end surface of said annular boss is no higher than an upper surface of said substrate.
11. The susceptor system of claim 10, wherein the lower surface and the upper surface of the annular boss are each at a 90 degree angle from vertical;
the lower surface of the annular boss is lower than the upper surface of the substrate, and the upper surface of the annular boss is higher than the upper surface of the substrate.
12. The susceptor system of claim 11, wherein a height difference between an upper surface of the annular ledge and an upper surface of the substrate ranges from 1.5mm to 5 mm.
13. The pedestal system according to claim 7, further comprising a first edge ring and a second edge ring surrounding the pedestal, wherein the purge channel is disposed between the first edge ring and the second edge ring, and wherein the gas outlet of the purge channel is located no higher than the upper surface of the substrate.
14. The susceptor system according to any one of claims 7 to 13, wherein an outer diameter of the susceptor is larger than a diameter of the substrate.
15. The pedestal system according to claim 14, wherein a thermal insulator and/or a thermal barrier coating is provided on the bottom and side walls of the pedestal.
16. A process chamber having a susceptor disposed therein for carrying a substrate, further comprising an edge purge apparatus as claimed in any of claims 1 to 6 for purging an edge of the substrate.
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| CN201910400446.6A CN111952233A (en) | 2019-05-14 | 2019-05-14 | Edge purging device, pedestal system and process chamber |
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| CN201910400446.6A CN111952233A (en) | 2019-05-14 | 2019-05-14 | Edge purging device, pedestal system and process chamber |
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| CN114560465A (en) * | 2022-04-07 | 2022-05-31 | 新特能源股份有限公司 | Air guide ring and reaction furnace sight glass system |
| WO2022111354A1 (en) * | 2020-11-25 | 2022-06-02 | 北京北方华创微电子装备有限公司 | Semiconductor process apparatus |
| WO2022132499A1 (en) * | 2020-12-18 | 2022-06-23 | Applied Materials, Inc. | Methods to eliminate of deposition on wafer bevel and backside |
| WO2022203947A1 (en) * | 2021-03-26 | 2022-09-29 | Applied Materials, Inc. | Hardware to prevent bottom purge incursion in application volume and process gas diffusion below heater |
| CN115142046A (en) * | 2021-03-31 | 2022-10-04 | 中微半导体设备(上海)股份有限公司 | Substrate bearing assembly, chemical vapor deposition equipment and purging method |
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