TWI837843B - Heating device, chemical vapor deposition equipment and blowing method - Google Patents

Abstract

The present invention discloses a heating device, a chemical vapor deposition equipment and a purging method, which are used for chemical vapor deposition equipment. The heating device includes: a heater base, and the heater base can be used to carry a substrate to be processed. A fixed edge ring is sleeved on the heater base, and a buffer cavity and a gap are located between the fixed edge ring and the heater base. The gap includes a horizontal gap and an inclined gap, one end of the horizontal gap is connected to the buffer cavity, and the other end is connected to the inclined gap, and one end of the inclined gap opens toward the edge of the substrate. A plurality of hollow air plugs are arranged in the heater base at circumferential intervals around the edge of the heater base. Each air plug is provided with a through hole for ventilating the buffer cavity. The present invention can improve the uniformity of sweeping the edge of a substrate.

Description

Heating device, chemical vapor deposition equipment and blowing method

The present invention relates to the field of semiconductor processing equipment technology, and in particular to a heating device, chemical vapor deposition equipment and a purge method.

Chemical vapor deposition (CVD) reaction equipment or atomic layer deposition (ALD) reaction equipment places a carrier plate (substrate support assembly) with a processed substrate during deposition. A typical vapor deposition reactor structure is a reaction chamber surrounded by the side walls of the reaction chamber, the reaction chamber includes an axis structure, and a heating device with a substrate is installed at the top of the axis structure. The top of the reaction chamber includes a gas shower head, which is used to uniformly inject the reaction gas from the reaction gas source into the reaction chamber to achieve the processing of the substrate. The bottom of the reaction chamber also includes an exhaust device to control the internal air pressure of the reaction chamber and exhaust the waste gas generated during the reaction process.

When the above reaction equipment is used to process substrates (substrates or wafers), the edge purge function and the bottom purge function need to be used to purge the substrate to reduce the accumulation of deposits on the edge of the substrate support base to protect the substrate support base from the impact of the processing gas. The edge ring component can be maintained at a relatively low temperature to minimize the deposits on the edge ring component; improve chamber performance, extend the time to maintain a clean environment, and prevent reactive gases from contacting the back of the wafer and contaminating it.

Through the edge sweep test on the substrate, it was found that since the hardware of the existing heating device cannot be changed, and the sweep aperture depends on the assembly position of the two components, the change of the sweep aperture due to the existence of the assembly tolerance causes the uneven distribution of the substrate edge sweep gas. At the same time, if the distribution of the sweeping airflow needs to be adjusted, the structure of the entire heater or heating device needs to be changed. In order to obtain the ideal airflow distribution, the structure must be changed for each test, which will inevitably lead to increased costs and long test waiting cycles. In addition, the wafer edge sweep gas of the existing technology is difficult to flexibly control.

The purpose of the present invention is to provide a heating device, chemical vapor deposition equipment and a blowing method to achieve the control of the wafer edge effect and improve the blowing uniformity of the substrate edge.

In order to achieve the above purpose, the present invention is implemented through the following technical solutions: A heating device for chemical vapor deposition equipment, comprising: a heater base, the heater base can be used to carry a substrate to be processed. A fixed edge ring, which is sleeved on the heater base, a buffer cavity and a gap are located between the fixed edge ring and the heater base. The gap includes a horizontal gap and an inclined gap, one end of the horizontal gap is connected to the buffer cavity, and the other end is connected to the inclined gap, and one end of the inclined gap opens toward the edge of the substrate. A plurality of hollow air plugs are arranged in the heater base at circumferential intervals around the edge of the heater base. Each of the air plugs is provided with a through hole for ventilating the buffer cavity.

Optionally, the edge of the heater base is provided with multiple steps extending radially inward; the fixed edge ring is located on the multiple steps, and the surface of the first step of the multiple steps close to the bottom surface of the heater base and the inner surface of the fixed edge ring form the buffer cavity. The surfaces of the other steps and the inner surface of the fixed edge ring form the gap.

Optionally, the width of the horizontal gap is the same as or different from the width of the tilted gap.

Optionally, the step includes three layers, which are the first step, the second step and the third step; each of the air plugs is located below the first step, and the air plug is connected to the buffer cavity through the first step surface of the first step; the second step surface of the second step and the inner surface of the fixed edge ring form the horizontal gap; the side surface of the third step and the inner surface of the fixed edge ring form the inclined gap.

Optionally, the buffer cavity is annular.

Optionally, the horizontal gap is in the shape of a ring.

Optionally, the tilted gap is in the shape of a ring.

Optionally, the horizontal width of the horizontal gap ranges from 1.5mm to 5mm.

Optionally, the vertical thickness of the horizontal gap ranges from 0.2mm to 1mm.

Optionally, the through hole wall in each of the air plugs is irregular.

Optionally, the through hole in each of the air plugs is cylindrical.

Optionally, each of the air plugs is tilted in the heater base, and the end of the air plug close to the first step surface is far away from the central axis of the heater base; the end of the air plug far away from the first step surface is close to the central axis of the heater base.

Optionally, the outer surface of each of the air plugs is cylindrical.

Optionally, each of the air plugs is made of aluminum material.

Optionally, it further comprises: a movable edge ring, which is sleeved on the fixed edge ring, and the inner diameter of the movable edge ring is smaller than the inner diameter of the fixed edge ring.

On the other hand, the present invention also provides a chemical vapor deposition device, comprising: a reaction chamber; a gas shower head is arranged at the top of the reaction chamber, and a heating device as described above is arranged below the gas shower head.

In other aspects, the present invention also provides a method for processing a substrate using the chemical vapor deposition equipment as described above, which includes: using a gas shower head to uniformly inject the reaction gas from the reaction gas source into the reaction chamber to achieve processing of the substrate, and the edge sweeping gas passes through each through hole in the gas plug, the buffer cavity, the horizontal gap and the inclined gap to the edge of the substrate to be processed; adjusting the aperture of the through hole to adjust the flow rate and direction of the gas flow to improve the uniformity of the substrate edge sweeping.

The present invention has at least one of the following advantages: The present invention provides a heating device for chemical vapor deposition equipment, wherein the heating device introduces edge sweeping gas into the buffer chamber through a through hole in the gas plug, and the edge sweeping gas in the buffer chamber sequentially passes through the horizontal gap and the inclined gap to sweep the edge of the substrate, thereby preventing the deposition gas from being deposited on the rear side of the edge of the substrate, thereby solving the problem that the substrate is easily broken when being taken out due to sticking to the heating device, and improving the chamber performance, extending the time of maintaining a clean environment, and preventing the reactive gas from contacting the back of the wafer and contaminating it.

The setting of the horizontal gap slows down the airflow velocity toward the edge of the substrate, and the required edge sweeping effect or requirement can be achieved by changing the length and/or width of the horizontal gap. When the sweeping gas along the edge of the substrate is unevenly distributed due to the installation tolerance between different components, since the horizontal gap is directly located between the inclined gap and the buffer cavity, its gap thickness is not affected by the horizontal displacement of different components, so that the gas flow velocity flowing out of the horizontal gap can be uniformly distributed along the edge of the substrate.

The buffer cavity is used to temporarily store the purge gas from the through hole, so that the airflow velocity and flow rate through the horizontal gap and the inclined gap can be kept stable at the edge of the substrate.

The setting of the tilted gap can ensure the integrity of the horizontal gap.

The through hole wall in the air plug provided by the present invention is irregular, so by adjusting the aperture and/or shape of the through hole of the air plug, the direction and velocity of the airflow into the buffer cavity can be changed, thereby further improving the uniformity of the deposited film on the edge of the substrate.

By adjusting the aperture and/or shape of the through hole of the air plug to perform the process edge sweep test, the cost is low and the test time is short, which effectively improves the efficiency of the process edge sweep test.

10: First step

11: Second step

12: The third step

100: Heater base

101: Fixed edge ring

102: Movable edge ring

1010: horizontal gap

1011: Tilt gap

111: Buffer chamber

200: Air plug

2010,2011:Through Hole

2012: Port

300: Seals

FIG1 is a schematic diagram of the main structure section of a heating device provided in one embodiment of the present invention; FIG2 is a schematic diagram of the main structure section of a heating device provided in another embodiment of the present invention; FIG3 is a schematic diagram of the main structure section of a heating device provided in another embodiment of the present invention; FIG4 is a mass flow distribution curve of the purge gas during the horizontal gap test provided in one embodiment of the present invention; and FIG5 is a mass flow distribution curve of the purge gas during the horizontal gap test provided in another embodiment of the present invention.

The following is a further detailed description of the heating device, chemical vapor deposition equipment and purging method proposed by the present invention in combination with specific implementation methods. According to the following description, the advantages and features of the present invention will be more clear. It should be noted that the attached figures are in a very simplified form and are not in exact proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the attached figures. It should be noted that the structures, proportions, sizes, etc. depicted in the drawings attached to this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportion or adjustment of size, without affecting the effects and purposes that can be produced by the present invention, should still fall within the scope of the technical content disclosed by the present invention.

Implementation Example 1

As shown in FIG1 , this embodiment provides a heating device for chemical vapor deposition equipment, including: a heater base 100, the heater base 100 can be used to carry a substrate to be processed. A fixed edge ring 101 is sleeved on the heater base 100, and a buffer cavity 111 and a gap are located between the fixed edge ring 101 and the heater base 100. The gap includes a horizontal gap 1010 and an inclined gap 1011, one end of the horizontal gap 1010 is connected to the buffer cavity 111, and the other end is connected to the inclined gap 1011, and one end of the inclined gap 1011 opens toward the edge of the substrate, that is, one end of the inclined gap 1011 opens toward the edge of the upper surface of the heater base 100.

A plurality of hollow air plugs 200 are arranged in the heater base 100 at circumferential intervals around the edge of the heater base 100. A through hole 2010 is provided in each of the air plugs 200 for ventilating the buffer cavity 111.

The edge of the heater base 100 is provided with multiple steps extending radially inward; the fixed edge ring 101 is located on the multiple steps, and the surface of the first step close to the bottom surface of the heater base 100 and the inner surface of the fixed edge ring 101 form the buffer cavity 111. The surfaces of the other steps and the inner surface of the fixed edge ring 101 form the gap.

In this embodiment, the steps include three layers, namely the first step 10, the second step 11 and the third step 12; the inner surface of the portion of the fixed edge ring 101 corresponding to the second step 11 is far away from the vertical side surface of the second step 11, so that when the fixed edge ring 101 is sleeved on the heater base 100, a buffer cavity 111 can be formed, and each of the air plugs 200 is located below the first step 10, and the first step 10 The upper surface is the first step surface, and the gas plug 200 is connected to the buffer cavity 111 through the first step surface of the first step 10; the upper surface of the second step 11 is the second step surface, and the second step surface and the inner surface of the fixed edge ring 101 form the horizontal gap 1010; the third step 12 has an inclined side surface, and the side surface and the inner surface of the fixed edge ring 101 form the inclined gap 1011.

In this embodiment, each of the air plugs 200 is tilted in the heater base 100, and the end of the air plug 200 close to the first step is far away from the central axis of the heater base 100; the end of the air plug 200 far away from the first step is close to the central axis of the heater base 100. This placement is to facilitate the preparation of the air plug 200 in the first step 10 in the heater base 100. Due to the difference in the layout of other components at the bottom of the heater base 100, such a plug arrangement will more flexibly meet the input requirements of the blowing gas. A sealing member 300 is provided at one end of each of the air plugs 200 close to the bottom of the first step 10. In other embodiments, the air plug 200 can also be arranged vertically.

In this embodiment, the buffer cavity 111 is generally annular, the horizontal gap 1010 is generally annular; the inclined gap 1011 is generally annular to ensure uniform gas sweeping of the edge of the substrate, but the present invention is not limited thereto, the buffer cavity 111, the horizontal gap 1010 and the inclined gap 1011 can be customized according to the shape of the heater base 100.

In this embodiment, the horizontal width of the horizontal gap 1010 ranges from 1.5 mm to 5 mm. The vertical thickness of the horizontal gap 1010 ranges from 0.2 mm to 1 mm. The width of the horizontal gap 1010 is the same as or different from the width of the inclined gap 1011.

It can be seen that in this embodiment, the thickness of the horizontal gap 1010 will not change due to the relative movement of the fixed edge ring 101 and the heater base 100 in the horizontal direction. This relative movement is inevitable during assembly. If the thickness of the horizontal gap 1010 does not change, the flow rate of the purge gas flowing out of the buffer cavity 111 after passing through the horizontal gap 1010 will be basically stable, even if the thickness of the inclined gap 1011 changes. , It will not affect the distribution of the blowing gas at the edge of the substrate, because the pressure difference from the buffer cavity 111 to the horizontal gap 1010 is relatively large, and the pressure difference from the horizontal gap 1010 to the inclined gap 1011 is very small and negligible. The setting of the horizontal gap 1010 unifies the airflow velocity to the edge of the substrate, and the required edge blowing effect or requirement can be achieved by changing the length and/or width of the horizontal gap 1010.

The buffer chamber 111 is used to temporarily store the blowing gas from the through hole 2010, so that the airflow velocity and flow rate through the horizontal gap 1010 and the inclined gap 1011 can be kept stable at the edge of the substrate. The setting of the inclined gap 1011 can ensure the integrity of the horizontal gap 1010 and adjust the blowing direction of the blowing gas at the edge of the substrate.

In this embodiment, each of the air plugs 200 is made of aluminum. The outer surface of each of the air plugs 200 is cylindrical, and the hole wall of each of the through holes 2010 in the air plugs 200 is irregular. Specifically, in this embodiment, the through holes 2010 in each of the air plugs 200 are cylindrical as a whole. Each of the through holes 2010 is coaxially arranged with the corresponding air plug 200. The air plug 200 is movably connected to the heater base 100, and an air plug 200 with a different shape of through hole 2010 can be used during the purge test to obtain a suitable purge gas distribution.

This embodiment further includes: a movable edge ring 102, which is sleeved on the fixed edge ring 101, and the inner diameter of the movable edge ring 102 is smaller than the inner diameter of the fixed edge ring 101. One of the functions of the movable edge ring 102 is to facilitate the assembly of the heating device. The second function is that since the inner diameter of the movable edge ring 102 is smaller than the inner diameter of the fixed edge ring 101, when the movable edge ring 102 is assembled to the fixed edge ring 101, the inner diameter of the movable edge ring 102 can form an edge, and the edge is located above the inclined gap 1011. In this way, the edge blowing gas flowing out of the inclined gap 1011 will blow toward the edge of the substrate in the horizontal direction instead of blowing upwards, thereby improving the blowing effect and improving the cleanliness of the substrate surface.

The present embodiment provides a heating device for chemical vapor deposition equipment. The heating device introduces edge sweeping gas into the buffer chamber 111 through the through hole 2010 in the gas plug 200. The edge sweeping gas in the buffer chamber 111 sequentially passes through the horizontal gap 1010 and the inclined gap 1011 to sweep the edge of the substrate, thereby preventing the deposition gas from being deposited on the rear side of the edge of the substrate, thereby solving the problem of the substrate being easily broken when being taken out due to the substrate sticking to the heating device, improving the chamber performance, extending the time of maintaining a clean environment, and preventing the reactive gas from contacting the back of the wafer and contaminating it.

Implementation Example 2

As shown in FIG. 2 , the difference between this embodiment and the first embodiment is that the shape of the through hole 2011 in each of the air plugs 200 provided in this embodiment is different from the shape of the through hole provided in the first embodiment.

In this embodiment, the through hole 2011 is in a V-shaped bend shape as a whole, specifically including a first bend section and a second bend section connected to each other, the first bend section and the second bend section are cylindrical, the first bend section is coaxially arranged with the gas plug 200, one end of the second bend section is connected to the first bend section, and the other end is arranged close to the central axis of the gas plug 200, thereby changing the direction of the airflow entering the buffer cavity 111, thereby changing the flow rate of the blowing gas entering the edge of the substrate, so as to adjust the blowing effect at the corresponding edge of the substrate.

Implementation Example 3

As shown in FIG3 , the difference between this embodiment and the first embodiment is that the setting position of each of the air plugs 200 provided in this embodiment is different from the setting position of the air plug in the first embodiment.

In this embodiment, the air plug 200 is vertically arranged inside the edge of the heater base 100; specifically, it is located below the second step 11 and penetrates the first step 10.

The through hole 2011 in each of the gas plugs 200 is cylindrical and is coaxially arranged with the gas plug 200. The end port 2012 of the through hole 2011 connected to the buffer cavity 111 is narrowed. The setting of this end port 2012 can first block the blowing gas rushing in from below to reduce the turbulence in the buffer cavity, that is, to ensure the airflow stability of the edge blowing gas in the buffer cavity 111, thereby improving the uniformity of the blowing of the edge of the substrate.

FIG4 shows the mass flow distribution curve of the sweeping gas during the horizontal gap test provided by an embodiment of the present invention. The horizontal coordinate in the figure represents the position coordinates of the substrate edge at different angles, and the vertical axis represents the mass flow of the sweeping gas. The horizontal gap is selected to be 1.5 mm wide and 0.2 mm thick, and the non-uniformity is defined as the difference between the maximum mass flow and the minimum mass flow at different positions and the percentage of the minimum value. It can be seen that within the range of 0 to 30 of the substrate, the maximum mass flow of the sweeping gas is 0.345, the minimum is 0.339, and the non-uniformity is 2.1%. The reason for the fluctuation of the curve is that it reaches the maximum value near the gas plug and the minimum value between the two gas plugs. It can be seen that the use of the technical solution of the present invention can significantly reduce the non-uniformity.

As shown in Figure 5, it is a mass flow distribution curve of the sweeping gas during the horizontal gap test provided by another embodiment of the present invention, wherein the horizontal gap is selected to be 5mm in width and 1mm in thickness. In the range of substrate 0 to 30, the maximum mass flow of the sweeping gas is 0.3447, the minimum is 0.3405, and the non-uniformity is 1.2%. It can be seen that by adjusting the width and thickness of the horizontal gap, the distribution uniformity of the sweeping gas at the edge of the substrate can be adjusted.

It can be seen that the uniformity of edge sweeping can be adjusted by adjusting the aperture of the through hole and/or the width of the horizontal gap.

On the other hand, this embodiment also provides a chemical vapor deposition device, including: a reaction chamber; a gas shower head is arranged at the top of the reaction chamber, and a heating device as described above is arranged below the gas shower head.

In other aspects, the present embodiment also provides a method for processing a substrate using the chemical vapor deposition equipment as described above, comprising: using a gas shower head to uniformly inject a reaction gas from a reaction gas source into a reaction chamber to achieve processing of the substrate, and the edge sweeping gas passes through each through hole in the gas plug, the buffer cavity, the horizontal gap and the inclined gap to the edge of the substrate to be processed; adjusting the aperture of the through hole to adjust the flow rate and direction of the gas flow to improve the uniformity of the substrate edge sweeping.

In summary, the present embodiment provides a heating device for chemical vapor deposition equipment, wherein the heating device introduces edge sweeping gas into the buffer chamber through a through hole in the gas plug, and the edge sweeping gas in the buffer chamber sequentially passes through the horizontal gap and the inclined gap to sweep the edge of the substrate, thereby preventing the deposition gas from being deposited on the rear side of the edge of the substrate, thereby solving the problem of the substrate being easily broken when being taken out due to the substrate sticking to the heating device, and improving the chamber performance, extending the time of maintaining a clean environment, and preventing the reactive gas from contacting the back of the wafer and contaminating it.

The setting of the horizontal gap slows down the airflow velocity toward the edge of the substrate, and the required edge sweeping effect or requirement can be achieved by changing the length and/or width of the horizontal gap. When the sweeping gas along the edge of the substrate is unevenly distributed due to the installation tolerance between different components, since the horizontal gap is directly located between the inclined gap and the buffer cavity, its gap thickness is not affected by the horizontal displacement of different components, so that the gas flow velocity flowing out of the horizontal gap can be uniformly distributed along the edge of the substrate.

The buffer cavity is used to temporarily store the purge gas from the through hole, so that the airflow velocity and flow rate through the horizontal gap and the inclined gap can be kept stable at the edge of the substrate.

The setting of the tilted gap ensures the integrity of the horizontal gap.

The through hole wall in the gas plug provided in this embodiment is irregular, so by adjusting the aperture and/or shape of the through hole of the gas plug, the direction and velocity of the airflow into the buffer cavity can be changed, thereby further improving the uniformity of the deposited film at the edge of the substrate.

By adjusting the aperture and/or shape of the through hole of the air plug to perform the process edge sweep test, the cost is low and the test time is short, which effectively improves the efficiency of the process edge sweep test.

It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of more restrictions, the elements defined by the phrase "comprises a..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

In the description of the present invention, it should be understood that the terms "center", "height", "thickness", "up", "down", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the attached drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In the description of the present invention, unless otherwise specified, the meaning of "multiple" is two or more.

In the description of the present invention, unless otherwise clearly specified and limited, the terms "installation", "connection", "connection", and "fixation" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two components or the interaction relationship between two components. For those with ordinary knowledge in the technical field to which the present invention belongs, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

In the present invention, unless otherwise clearly specified and limited, the first feature being "above" or "below" the second feature may include the first and second features being in direct contact, or the first and second features not being in direct contact but being in contact through another feature between them. Moreover, the first feature being "above", "above" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature includes the first feature being directly below and obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After reading the above content, a person of ordinary skill in the technical field to which the present invention belongs will find various modifications and substitutions of the present invention obvious. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.

10: First step

11: Second step

12: The third step

100: Heater base

101: Fixed edge ring

102: Movable edge ring

1010: horizontal gap

1011: Tilt gap

111: Buffer chamber

200: Air plug

2010:Through Hole

300: Seals

Claims (16)

A heating device, used in a chemical vapor deposition equipment, including: a heater base, which can be used to carry a substrate to be processed; a fixed edge ring, which is sleeved on the heater base, a buffer cavity and a gap are located between the fixed edge ring and the heater base; the gap includes a horizontal gap and an inclined gap, one end of the horizontal gap is connected to the buffer cavity, and the other end is connected to the inclined gap, and one end of the inclined gap opens toward the edge of the substrate; a plurality of hollow air plugs are arranged in the heater base at intervals around the edge of the heater base; each of the air plugs is provided with a through hole for ventilating the buffer cavity. The heating device as described in claim 1, wherein the edge of the heater base is provided with multiple steps extending radially inward; the fixed edge ring is located on the multiple steps, and the surface of a first step of the multiple steps close to the bottom surface of the heater base and the inner surface of the fixed edge ring form the buffer cavity; the surfaces of the other steps and the inner surface of the fixed edge ring form the gap. The heating device as described in claim 2, wherein the step includes three layers, namely the first step, a second step and a third step; each of the air plugs is located below the first step, and the air plug is connected to the buffer cavity through a first step surface of the first step; a second step surface of the second step and the inner surface of the fixed edge ring form the horizontal gap; the side surface of the third step and the inner surface of the fixed edge ring form the inclined gap. A heating device as described in claim 1, wherein the buffer cavity is annular. A heating device as described in claim 1, wherein the horizontal gap is in the shape of a circular ring. A heating device as described in claim 1, wherein the inclined gap is in the shape of a ring. A heating device as described in claim 1, wherein the horizontal width of the horizontal gap ranges from 1.5 mm to 5 mm. A heating device as described in claim 7, wherein the vertical thickness of the horizontal gap ranges from 0.2mm to 1mm. A heating device as described in claim 1, wherein the through hole wall in each of the air plugs is irregular in shape. A heating device as described in claim 1, wherein the through hole in each of the air plugs is cylindrical. A heating device as described in claim 3, wherein each of the air plugs is tilted in the heater base, and the end of the air plug close to the first step is far from the central axis of the heater base; the end of the air plug far from the first step is close to the central axis of the heater base. A heating device as described in claim 1, wherein the outer surface of each air plug is cylindrical. A heating device as described in claim 1, wherein each of the air plugs is made of aluminum material. The heating device as described in claim 1, further comprising: a movable edge ring, which is sleeved on the fixed edge ring, and the inner diameter of the movable edge ring is smaller than the inner diameter of the fixed edge ring. A chemical vapor deposition device, comprising: a reaction chamber; a gas shower head is arranged at the top of the reaction chamber, and a heating device as described in any one of claim items 1 to 14 is arranged below the gas shower head. A method for treating a substrate by using a chemical vapor deposition device as described in claim 15, comprising: using a gas shower head to uniformly inject a reaction gas from a reaction gas source into the reaction chamber to achieve processing of the substrate, and the edge-sweeping gas is passed through the through hole, the buffer cavity, the horizontal gap and the inclined gap in each gas plug to the edge of the substrate to be treated; adjusting the aperture of the through hole to adjust the flow rate and direction of the gas flow to improve the uniformity of the substrate edge sweeping.