CN116334583A

CN116334583A - Heating device, chemical vapor deposition equipment and purging method

Info

Publication number: CN116334583A
Application number: CN202111581323.0A
Authority: CN
Inventors: 龚岳俊; 姜勇
Original assignee: Advanced Micro Fabrication Equipment Inc Shanghai
Current assignee: Advanced Micro Fabrication Equipment Inc Shanghai
Priority date: 2021-12-22
Filing date: 2021-12-22
Publication date: 2023-06-27
Also published as: TW202325883A; KR20230095802A

Abstract

The invention discloses a heating device, chemical vapor deposition equipment and a purging method, which are used for the chemical vapor deposition equipment, wherein the heating device comprises: a heater base on which a substrate to be processed can be carried. The fixed side ring is sleeved on the heater base, and a buffer cavity and a gap are arranged between the fixed side ring and the heater base. The gap comprises a horizontal gap and an inclined gap, one end of the horizontal gap is communicated with the buffer cavity, the other end of the horizontal gap is communicated with the inclined gap, and one end of the inclined gap is opened towards the edge of the substrate. And a plurality of hollow air plugs circumferentially spaced around the periphery of the heater base and disposed within the heater base. Each air plug is provided with a through hole for ventilation into the buffer cavity. The invention can improve the uniformity of the substrate edge sweeping.

Description

Heating device, chemical vapor deposition equipment and purging method

Technical Field

The invention relates to the technical field of semiconductor processing equipment, in particular to a heating device, chemical vapor deposition equipment and a purging method.

Background

A chemical vapor deposition (Chemical Vapor Deposition, CVD) reaction apparatus or an atomic layer deposition (Atomic layer deposition, ALD) reaction apparatus places a carrier plate (substrate support assembly) that processes a substrate while depositing. A typical vapor deposition reactor structure is a reaction chamber surrounded by a reaction chamber side wall, the reaction chamber comprising a shaft structure, and a heating device for placing a substrate is mounted on the top end of the shaft structure. The top of the reaction cavity comprises a gas spray head for uniformly injecting reaction gas into the reaction cavity from a reaction gas source to realize the processing treatment of the substrate, and an air extractor is arranged below the reaction cavity to control the internal air pressure of the reaction cavity and to extract waste gas generated in the reaction process.

When the reaction equipment is used for processing a substrate (a substrate or a wafer), the substrate needs to be purged by adopting an Edge purge (Edge purge) function and a bottom purge (bottom purge) function, so that deposit accumulation on the Edge of a substrate supporting base is reduced, and the substrate supporting base is protected from the influence of processing gas. The edge ring assembly may be maintained at a relatively low temperature to help minimize deposits on the edge ring assembly; improve chamber performance, extend the time to maintain a clean environment, and prevent reactive gases from contacting the wafer backside and contaminating.

By performing an edge purge test on the substrate, it was found that the purge aperture was dependent on the assembly position of the two components since the hardware of the existing heating device could not be modified, and that the purge aperture was changed due to the existence of composition tolerances, resulting in uneven distribution of the purge gas at the edge of the substrate. Meanwhile, if the distribution of the purging airflow is required to be adjusted, the structure of the whole heater or the heating device is required to be changed, and in order to obtain ideal airflow distribution, the structure is required to be changed every time of testing, so that the cost is necessarily increased, the waiting period of testing is long, and the wafer edge purging gas in the prior art is difficult to flexibly control.

Disclosure of Invention

The invention aims to provide a heating device, chemical vapor deposition equipment and a purging method, so as to realize the control of the wafer edge effect and improve the uniformity of substrate edge purging.

In order to achieve the above object, the present invention is realized by the following technical scheme:

a heating apparatus for a chemical vapor deposition apparatus, comprising: a heater pedestal on which a substrate to be processed may be carried. The fixed side ring is sleeved on the heater base, and a buffer cavity and a gap are positioned between the fixed side ring and the heater base. The gap comprises a horizontal gap and an inclined gap, one end of the horizontal gap is communicated with the buffer cavity, the other end of the horizontal gap is communicated with the inclined gap, and one end of the inclined gap is opened towards the edge of the substrate. And a plurality of hollow air plugs circumferentially spaced around the edge of the heater base and disposed within the heater base. And each air plug is provided with a through hole for ventilating the buffer cavity.

Optionally, a plurality of layers of steps extending inwards along the radial direction of the heater base are arranged on the edge of the heater base; the fixed side ring is positioned on a plurality of layers of steps, and the surface of a first step, which is close to the bottom surface of the heater base, of the steps and the inner surface of the fixed side ring form the buffer cavity. The other step surfaces and the inner surface of the fixed side ring form the gap.

Optionally, the width of the horizontal gap and the width of the inclined gap are the same or different.

Optionally, the steps include three layers, denoted as a first step, a second step, and a third step; each air plug is positioned below the first step and is communicated with the buffer cavity through a first step surface of the first step; the second step surface of the second step and the inner surface of the fixed side ring form the horizontal gap; the side surface of the third step and the inner surface of the fixed side ring form the inclined gap.

Optionally, the buffer cavity is in a ring shape.

Optionally, the horizontal gap is annular.

Optionally, the inclined gap is in a circular shape.

Optionally, the horizontal width of the horizontal gap ranges from 1.5mm to 5mm.

Optionally, the vertical thickness of the horizontal gap ranges from 0.2mm to 1mm.

Optionally, the hole wall of the through hole in each air plug is irregular.

Optionally, the through hole in each air plug is cylindrical.

Optionally, each air plug is obliquely arranged in the heater base, and one end of the air plug, which is close to the first step surface, is far away from the central axis of the heater base; one end of the air plug, which is far away from the first step surface, is close to the central shaft of the heater base.

Optionally, the outer surface of each air plug is cylindrical.

Optionally, each of the air plugs is made of an aluminum material.

Optionally, the method further comprises: the movable side ring is sleeved on the fixed side ring, and the inner diameter of the movable side ring is smaller than that of the fixed side ring.

In yet another aspect, the present invention also provides a chemical vapor deposition apparatus, including: a reaction chamber; a gas spray head is arranged at the top end of the reaction cavity, and a heating device as described above is arranged below the gas spray head.

In other aspects, the invention also provides a method of treating a substrate using a chemical vapor deposition apparatus as described above, comprising: uniformly injecting reaction gas from a reaction gas source into a reaction cavity by adopting a gas spray head to realize processing treatment of a substrate, and introducing edge purging gas to the edge of the substrate to be processed through a through hole in each gas plug, the buffer cavity, the horizontal gap and the inclined gap; and adjusting the aperture of the through hole to adjust the flow speed and the flow direction of the air flow so as to improve the edge sweeping uniformity of the substrate.

The invention has at least one of the following advantages:

according to the heating device for the chemical vapor deposition equipment, provided by the invention, the edge purging gas is introduced into the buffer cavity through the through hole in the air plug, and the edge purging gas in the buffer cavity sequentially purges the edge of the substrate through the horizontal gap and the inclined gap, so that deposition gas is prevented from depositing on the rear side of the edge of the substrate, the problem that the substrate is easy to crack when being stuck on the heating device, the performance of a cavity is improved, the time for keeping a clean environment is prolonged, and the reaction gas is prevented from contacting the back surface of a wafer and pollution are further solved.

The provision of the horizontal gap slows the flow rate of the gas stream to the edge of the substrate and by altering the length and/or width of the horizontal gap, the desired edge purge effect or requirement can be achieved. When the purge gas is unevenly distributed along the edge of the substrate due to the installation tolerance between different components, the horizontal gap is directly positioned between the inclined gap and the buffer cavity, and the thickness of the gap is not influenced by the horizontal displacement of the different components, so that the gas flow velocity flowing out of the horizontal gap can be uniformly distributed along the edge of the substrate.

The buffer chamber is used for temporarily storing the purge gas from the through hole, so that the flow speed and the flow rate of the gas flow passing through the horizontal gap and the inclined gap can be kept stable at the edge of the substrate.

The provision of the slanted gap can ensure the integrity of the horizontal gap.

The through hole wall in the air plug is irregular, so that the air flow direction and the air flow velocity in the buffer cavity can be changed by adjusting the aperture and/or the shape of the through hole of the air plug, and the uniformity of the deposited film at the edge of the substrate is further improved.

The process edge purging test is carried out by adjusting the aperture and/or the shape of the through hole of the air plug, so that the cost is low, the test time is short, and the efficiency of the process edge purging test is effectively improved.

Drawings

FIG. 1 is a schematic cross-sectional view of a heating device according to an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of a heating device according to another embodiment of the present invention;

FIG. 3 is a schematic cross-sectional view of a heating device according to another embodiment of the present invention;

FIG. 4 is a graph showing the mass flow distribution of purge gas during a horizontal gap test according to one embodiment of the present invention;

FIG. 5 is a graph showing the mass flow distribution of purge gas during a horizontal gap test according to another embodiment of the present invention.

Detailed Description

The heating device, the chemical vapor deposition apparatus and the purging method according to the present invention are described in further detail below in conjunction with the following embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.

Example 1

As shown in fig. 1, the present embodiment provides a heating device for a chemical vapor deposition apparatus, including: a heater pedestal 100, the heater pedestal 100 being operable to carry a substrate to be processed. The fixed edge ring 101 is sleeved on the heater base 100, and a buffer cavity 111 and a gap are positioned between the fixed edge ring 101 and the heater base 100. The gap includes a horizontal gap 1010 and an inclined gap 1011, one end of the horizontal gap 1010 communicates with the buffer chamber 111, and the other end communicates with the inclined gap 1011, and one end of the inclined gap 1011 is opened toward the edge of the substrate, i.e., one end of the inclined gap 1011 is opened toward the upper surface edge of the heater base 100.

A plurality of hollow air plugs 200 are circumferentially spaced around the periphery of the heater base 100 within the heater base 100. A through hole 2010 is provided in each of the air plugs 200 for ventilation into the buffer chamber 111.

The edge of the heater base 100 is provided with a plurality of steps extending inwards along the radial direction; the fixed edge ring 101 is located on a plurality of layers of steps, and the surface of a first step, close to the bottom surface of the heater base 100, of the plurality of layers of steps and the inner surface of the fixed edge ring 101 form the buffer cavity 111. The other step surfaces and the inner surface of the fixed edge ring 101 form the gap therebetween.

In this embodiment, the steps comprise three layers, denoted as a first step 10, a second step 11 and a third step 12; when the inner surface of the portion of the fixed edge ring 101 corresponding to the second step 11 is far away from the vertical side surface of the second step 11, and the fixed edge ring 101 is sleeved on the heater base 100, a buffer cavity 111 can be formed, each air lock 200 is located below the first step 10, the upper surface of the first step 10 is a first step surface, and the air lock 200 is communicated with the buffer cavity 111 through the first step surface of the first step 10; the upper surface of the second step 11 is a second step surface, and the second step surface and the inner surface of the fixed edge ring 101 form the horizontal gap 1010; the third step 12 has an inclined side surface which forms the inclined gap 1011 with the inner surface of the fixed edge ring 101.

In this embodiment, each of the air plugs 200 is disposed obliquely in the heater base 100, and an end of the air plug 200 close to the first step surface is far away from the central axis of the heater base 100; the end of the air lock 200 away from the first step surface is close to the central axis of the heater base 100. This placement is to facilitate the preparation of the airlock 200 within the first step 10 in the heater base 100. Such a plug is more flexible to meet purge gas input requirements due to differences in placement of other components in the lower portion of the heater base 100. A sealing member 300 is provided at an end port of each of the air plugs 200 near the bottom of the first step 10. In other embodiments, the airlock 200 may also be vertically disposed.

In this embodiment, the buffer cavity 111 is generally annular, and the horizontal gap 1010 is generally annular; the inclined gap 1011 is generally circular to ensure uniform gas purging of the edge of the substrate, but the invention is not limited thereto, and the horizontal gap 1010 and the inclined gap 1011 may be customized according to the shape of the heater base 100.

In this embodiment, the horizontal width of the horizontal gap 1010 ranges from 1.5mm to 5mm. The vertical thickness of the horizontal gap 1010 is 0.2mm-1mm. The width of the horizontal gap 1010 is the same as or different from the width of the inclined gap 1011.

It is understood that in the present embodiment, the thickness of the horizontal gap 1010 is not changed by the relative movement of the fixed edge ring 101 and the heater base 100 in the horizontal direction, which is unavoidable during assembly, if the thickness of the horizontal gap 1010 is not changed, the flow rate of the purge gas flowing out of the buffer chamber 111 through the horizontal gap 1010 is substantially stable, and even if the thickness of the inclined gap 1011 is changed, the distribution of the purge gas at the edge of the substrate is not affected, because the pressure difference from the buffer chamber 111 to the horizontal gap 1010 is relatively large, the pressure difference from the horizontal gap 1010 to the inclined gap 1011 is negligible, the arrangement of the horizontal gap 1010 unifies the flow rate of the gas flow to the edge of the substrate, and the desired edge purge effect or requirement can be achieved by changing the length and/or width of the horizontal gap 1010.

The buffer chamber 111 is provided to temporarily store purge gas from the through-hole 2010 so that the flow rate and flow rate of the gas flow through the horizontal gap 1010 and the inclined gap 1011 can be maintained stable at the edge of the substrate. The inclined gap 1011 may be configured to ensure the integrity of the horizontal gap 1010 and adjust the purge direction of the purge gas at the edge of the substrate.

In this embodiment, each of the air plugs 200 is made of an aluminum material. The outer surface of each air plug 200 is cylindrical, and the walls of the through holes 2010 in each air plug 200 are irregular. Specifically, in this embodiment, the through hole 2010 in each air lock 200 is generally cylindrical. Each through hole 2010 is coaxially disposed with the corresponding air lock 200. The air lock 200 is movably connected with the heater base 100, and the air lock 200 with different shapes of the through holes 2010 can be replaced during the purge test to obtain proper purge gas distribution.

The embodiment further includes: the movable side ring 102 is sleeved on the fixed side ring 101, and the inner diameter of the movable side ring 102 is smaller than that of the fixed side ring 101. One of the functions of the movable changing ring 102 is to facilitate the assembly of the heating device, and the other function is that, since the inner diameter of the movable changing ring 102 is smaller than the inner diameter of the fixed ring 101, when the movable changing ring 102 is assembled to the fixed ring 101, the inner diameter of the movable changing ring 102 forms a rim above the inclined gap 1011, so that the edge purge gas flowing out from the inclined gap 1011 blows toward the edge of the substrate along the horizontal direction, without blowing upward, thereby improving the purge effect and the surface cleanliness of the substrate.

According to the heating device for the chemical vapor deposition equipment, provided by the embodiment, the edge purging gas is introduced into the buffer cavity 111 through the through holes 2010 in the air plug 200, the edge purging gas in the buffer cavity 111 sequentially purges the edge of the substrate through the horizontal gap 1010 and the inclined gap 1011, deposition of the deposition gas on the rear side of the edge of the substrate is prevented, the problem that the substrate is easy to crack when being stuck on the heating device is solved, the performance of a cavity is improved, the time for keeping a clean environment is prolonged, and the reaction gas is prevented from contacting the back surface of a wafer and polluting.

Example two

As shown in fig. 2, the difference between the present embodiment and the first embodiment is that the shape of the through hole 2011 in each air lock 200 is different from that of the through hole provided in the first embodiment.

In this embodiment, the through hole 2011 is in a V-shaped bending shape, and specifically includes a first bending section and a second bending section that are connected to each other, where the first bending section and the second bending section are respectively cylindrical, the first bending section is coaxially arranged with the air plug 200, one end of the second bending section is connected with the first bending section, and the other end of the second bending section is close to the central axis of the air plug 200, so that the direction of the air flow introduced into the buffer cavity 111 can be changed, the flow rate of the edge purge gas introduced into the substrate is changed, and the purge effect at the edge of the corresponding substrate is convenient to adjust.

Example III

As shown in fig. 3, the difference between the present embodiment and the first embodiment is that the setting position of each air lock 200 provided in the present embodiment is different from that in the first embodiment.

In the present embodiment, the air lock 200 is vertically disposed inside the edge of the heater base 100; specifically, it is located below the second step 11 and is disposed through the first step 10.

The through holes 2011 in each gas plug 200 are cylindrical and are coaxially disposed with the gas plug 200, one end port 2012 of each through hole 2011, which is communicated with the buffer cavity 111, is narrowed, and the thinner end port 2012 can block the purge gas flowing from below to reduce turbulence in the buffer cavity, i.e. ensure the flow stability of the edge purge gas in the buffer cavity 111, and further improve the uniformity of the substrate edge purge.

FIG. 4 is a graph showing the mass flow distribution of the purge gas during a horizontal gap test according to an embodiment of the present invention, wherein the abscissa represents the position coordinates of the substrate edge at different angles, and the ordinate represents the mass flow of the purge gas, wherein the horizontal gap is selected to have a width of 1.5mm and a thickness of 0.2mm, and the non-uniformity is defined as the percentage of the difference between the maximum mass flow and the minimum mass flow at different positions. From this, the purge gas mass flow rate was 0.345 maximum, 0.339 minimum, and 2.1% non-uniformity over the range of substrates 0 to 30. The reason for the curve fluctuation is that a maximum value is reached near the air lock and a minimum value is reached between the two air locks. It can be seen that using the technical solution of the invention, non-uniformity can be significantly reduced.

As shown in fig. 5, a horizontal gap is provided for a mass flow distribution curve of purge gas in a horizontal gap test according to another embodiment of the present invention, wherein the horizontal gap is selected to have a width of 5mm and a thickness of 1mm, and the mass flow of the purge gas is in the range of 0 to 30 substrates, the maximum value is 0.3447, the minimum value is 0.3405, and the non-uniformity is 1.2%, and it can be seen that the distribution uniformity of the purge gas at the edge of the substrate can be adjusted by adjusting the width and thickness of the horizontal gap.

It follows that the uniformity of the edge purge can be adjusted by adjusting the aperture of the through hole and/or the width of the horizontal gap.

In still another aspect, the present embodiment further provides a chemical vapor deposition apparatus, including: a reaction chamber; a gas spray head is arranged at the top end of the reaction cavity, and a heating device as described above is arranged below the gas spray head.

In other aspects, the present embodiments also provide a method of processing a substrate using a chemical vapor deposition apparatus as described above, comprising: uniformly injecting reaction gas from a reaction gas source into a reaction cavity by adopting a gas spray head to realize processing treatment of a substrate, and introducing edge purging gas to the edge of the substrate to be processed through a through hole in each gas plug, the buffer cavity, the horizontal gap and the inclined gap; and adjusting the aperture of the through hole to adjust the flow speed and the flow direction of the air flow so as to improve the edge sweeping uniformity of the substrate.

In summary, according to the heating device for a chemical vapor deposition apparatus provided in this embodiment, the heating device is configured to introduce the edge purge gas into the buffer chamber through the through hole in the air lock, and the edge purge gas in the buffer chamber sequentially purges the edge of the substrate through the horizontal gap and the inclined gap, so as to prevent the deposition gas from depositing on the rear side of the edge of the substrate, further solve the problem that the substrate is easy to crack when being stuck on the heating device, improve the performance of the chamber, prolong the time for keeping a clean environment, and prevent the reaction gas from contacting the back of the wafer and polluting.

The provision of the slanted gap ensures the integrity of the horizontal gap.

The through hole wall in the air plug provided by the embodiment is in an irregular shape, so that the air flow direction and the air flow velocity in the buffer cavity can be changed by adjusting the aperture and/or the shape of the through hole of the air plug, and the uniformity of the deposited film at the edge of the substrate is further improved.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.

In the description of the present invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate describing the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.

In the description of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "secured" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.

In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.

While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.

Claims

1. A heating apparatus for a chemical vapor deposition apparatus, comprising:

a heater base on which a substrate to be processed is supported;

the fixed edge ring is sleeved on the heater base, and a buffer cavity and a gap are positioned between the fixed edge ring and the heater base;

the gap comprises a horizontal gap and an inclined gap, one end of the horizontal gap is communicated with the buffer cavity, the other end of the horizontal gap is communicated with the inclined gap, and one end of the inclined gap is opened towards the edge of the substrate;

the hollow air plugs are circumferentially arranged in the heater base at intervals around the edge of the heater base;

and each air plug is provided with a through hole for ventilating the buffer cavity.

2. The heating apparatus of claim 1, wherein the edge of the heater base is provided with a plurality of steps extending radially inwardly therefrom;

the fixed side ring is positioned on a plurality of layers of steps, and the surface of a first step, close to the bottom surface of the heater base, of the steps and the inner surface of the fixed side ring form the buffer cavity;

the other step surfaces and the inner surface of the fixed side ring form the gap.

3. The heating device of claim 2, wherein the width of the horizontal gap and the width of the inclined gap are the same or different.

4. A heating device according to claim 3, wherein the steps comprise three layers, denoted first step, second step and third step;

each air plug is positioned below the first step and is communicated with the buffer cavity through a first step surface of the first step;

the second step surface of the second step and the inner surface of the fixed side ring form the horizontal gap;

the side surface of the third step and the inner surface of the fixed side ring form the inclined gap.

5. The heating device of claim 1, wherein the buffer chamber is annular in shape.

6. The heating device of claim 1, wherein the horizontal gap is annular.

7. The heating device of claim 1, wherein the sloped gap is annular.

8. A heating device according to claim 1, wherein the horizontal gap has a horizontal width in the range of 1.5mm to 5mm.

9. The heating device of claim 8, wherein the vertical thickness of the horizontal gap ranges from 0.2mm to 1mm.

10. The heating device of claim 1, wherein the walls of the through holes in each of the air plugs are irregular.

11. The heating device of claim 1, wherein the through-hole in each of the air plugs is cylindrical.

12. The heating apparatus of claim 4, wherein each of said air plugs is disposed obliquely in said heater base, and an end of said air plug adjacent to said first step surface is remote from a central axis of said heater base;

one end of the air plug, which is far away from the first step surface, is close to the central shaft of the heater base.

13. The heating device of claim 1, wherein the outer surface of each of said air plugs is cylindrical.

14. The heating device of claim 1, wherein each of said air plugs is made of an aluminum material.

15. The heating device of claim 1, further comprising: the movable side ring is sleeved on the fixed side ring, and the inner diameter of the movable side ring is smaller than that of the fixed side ring.

16. A chemical vapor deposition apparatus, comprising: a reaction chamber; a gas spray head is arranged at the top end of the reaction cavity, and a heating device as set forth in any one of claims 1-15 is arranged below the gas spray head.

17. A method of processing a substrate using the chemical vapor deposition apparatus of claim 16, comprising:

uniformly injecting reaction gas from a reaction gas source into a reaction cavity by adopting a gas spray head to realize processing treatment of a substrate, and introducing edge purging gas to the edge of the substrate to be processed through a through hole in each gas plug, the buffer cavity, the horizontal gap and the inclined gap;

and adjusting the aperture of the through hole to adjust the flow speed and the flow direction of the air flow so as to improve the edge sweeping uniformity of the substrate.