CN115142046B - Substrate bearing assembly, chemical vapor deposition equipment and purging method - Google Patents
Substrate bearing assembly, chemical vapor deposition equipment and purging method Download PDFInfo
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- CN115142046B CN115142046B CN202110345652.9A CN202110345652A CN115142046B CN 115142046 B CN115142046 B CN 115142046B CN 202110345652 A CN202110345652 A CN 202110345652A CN 115142046 B CN115142046 B CN 115142046B
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- cover plate
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- chemical vapor
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- 239000000758 substrate Substances 0.000 title claims abstract description 154
- 238000010926 purge Methods 0.000 title claims abstract description 67
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000010408 sweeping Methods 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 238000009434 installation Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 58
- 230000008569 process Effects 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a substrate bearing assembly, chemical vapor deposition equipment and a purging method, wherein the substrate bearing assembly comprises the following components: the shielding cover is connected with the edge of the mounting opening of the chemical vapor deposition equipment; a support base including a shaft structure and a substrate tray; the shielding cover is provided with a shaft hole matched with the shaft structure, so that the shaft structure passes through the shaft hole; the top end of the shaft structure is connected with the substrate tray, and the bottom end of the shaft structure penetrates through the shaft hole and is arranged on a lifter base to form a gas passage through a gap between the hole wall of the shaft hole of the shielding cover and the outer side wall of the shaft structure. The invention can improve the bottom sweeping uniformity of the substrate tray.
Description
Technical Field
The present invention relates to the field of semiconductor processing equipment, and in particular, to a substrate carrier assembly, a chemical vapor deposition apparatus, and a purging method.
Background
A chemical vapor deposition (Chemical Vapor Deposition, CVD) reaction apparatus or an atomic layer deposition (Atomic layer deposition, ALD) reaction apparatus rotates a carrier plate (substrate support assembly) on which a process substrate is placed during deposition, thereby providing a uniform deposition effect to the substrate. A typical vapor deposition reactor structure is a reaction chamber surrounded by a reaction chamber sidewall, the reaction chamber including an axial structure, a substrate tray having a substrate mounted thereon being mounted on top of the axial structure. The top of the reaction cavity comprises a gas spray head for uniformly injecting reaction gas into the reaction cavity from a reaction gas source to realize the processing treatment of the substrate, and an air extractor is arranged below the reaction cavity to control the internal air pressure of the reaction cavity and to extract waste gas generated in the reaction process.
When the reaction equipment is used for processing a substrate (a substrate or a wafer), the substrate needs to be purged by adopting an Edge purge (Edge purge) function and a bottom purge (bottom purge) function, so that deposit accumulation on the Edge of a substrate supporting base is reduced, and the substrate supporting base is protected from the influence of processing gas. The edge ring assembly may be maintained at a relatively low temperature to help minimize deposits on the edge ring assembly; improve chamber performance, extend the time to maintain a clean environment, and prevent micro-arcing (preventing tungsten gas from contacting the wafer backside) and contamination.
And the substrate is purged uniformly, however, when the bottom is purged due to the structural limitation of the shaft structure, the bottom of the substrate or the substrate supporting component is purged unevenly and is not adjustable, so that the substrate yield is affected.
Disclosure of Invention
The invention aims to provide a substrate bearing assembly, chemical vapor deposition equipment and a purging method, so as to realize the purpose of adjustably purging the bottom.
In order to achieve the above object, the present invention is realized by the following technical scheme:
a substrate carrier assembly for a chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising a reaction chamber having a bottom wall provided with a mounting opening, the substrate carrier assembly comprising: the shielding cover is connected with the edge of the mounting opening; a support base including a shaft structure and a substrate tray; the shielding cover is provided with a shaft hole matched with the shaft structure, so that the shaft structure passes through the shaft hole; the top end of the shaft structure is connected with the substrate tray, and the bottom end of the shaft structure penetrates through the shaft hole and is arranged on a lifter base; and a gap between the hole wall of the shaft hole of the shielding cover and the outer side wall of the shaft structure forms a gas passage.
Optionally, the method further comprises: and the lining is positioned around the installation opening, and the shielding cover is connected with the bottom wall of the reaction cavity through the lining.
Optionally, the shielding cover is movably connected with the inner lining.
Optionally, the radial cross section of the shaft structure comprises an annular section, a first projection and a second projection extending from the annular section to two sides respectively; the center of the annular section is provided with a central channel for accommodating wires for connecting the substrate tray with a power source positioned outside the reaction cavity; the first bulge is provided with a first channel, the second bulge is provided with a second channel, edge purging gas is introduced into the first channel to purge the edge of the substrate to be processed on the substrate tray, the second channel is used for vacuumizing to adsorb the substrate to be processed, and the second channel is also used for transmitting heat conducting gas between the substrate and the substrate tray.
Optionally, the cross-sectional shape of the shielding cover is the same as the radial cross-sectional shape of the shaft structure, and corresponds to each other one by one, so that gaps between the shielding cover and the shaft structure are the same along the circumferential direction.
Optionally, the cross-sectional shape of the shielding cover is not identical to the cross-section of the shaft structure, so that the gap between the shielding cover and the shaft structure is circumferentially different.
Optionally, the liner includes a horizontal ring portion and an extension ring portion connected thereto; the horizontal ring is arranged on the bottom wall of the reaction cavity at the edge of the mounting opening; the extension ring portion extends along the mounting opening side wall toward the elevator base, and the liner is used for isolating bottom purge gas introduced into the gas passage.
Optionally, the shielding cover comprises a first cover plate piece and a second cover plate piece, wherein the outer edge of the first cover plate piece is hinged with one side of the horizontal ring part, and the outer edge of the second cover plate piece is hinged with the other side of the horizontal ring part; the first cover plate piece and the second cover plate piece are oppositely arranged, and when the first cover plate piece and the second cover plate piece are in a closed state, the inner side edge of the first cover plate piece and the inner side edge of the second cover plate piece are spliced to form the shaft hole.
Optionally, the thickness of the shielding cover ranges from 10mm to 15mm.
Optionally, the material of the shielding cover is ceramic material or aluminum material.
Optionally, the first channel and the second channel extend along the axial direction of the shaft structure, one end of the first channel is connected with edge purging gas, and the other end of the first channel is communicated with the edge channel inside the substrate tray so as to purge the edge of the substrate to be processed on the substrate tray; one end of the second channel is communicated with the vacuum pump, the other end of the second channel is communicated with the inside of the substrate tray, the second channel is vacuumized to adsorb and fix the substrate to be processed, and the second channel is also used for communicating heat conducting gas and conveying transmission gas between the substrate and the substrate tray so as to realize uniform heat transfer between the substrate tray and the substrate.
In another aspect, the present invention also provides a chemical vapor deposition apparatus, including: a reaction chamber; a gas shower head is arranged at the top end of the reaction cavity, and a substrate bearing assembly as described above is arranged below the gas shower head.
Optionally, the method further comprises: and the corrugated pipe is arranged around the outside of the mounting opening, one end of the corrugated pipe is in sealing connection with the bottom wall of the reaction cavity, and the other end of the corrugated pipe is in sealing connection with the lifter base.
Optionally, the method further comprises: and the gas gathering ring is arranged around the substrate tray and is fixed on the side wall of the reaction cavity.
Optionally, the method further comprises: the top end of the shaft structure is connected with the bottom end of the substrate tray through the first shaft flange, and the bottom end of the shaft structure is arranged on the lifter base through the second shaft flange; one end of each third channel penetrates through the second shaft flange to be communicated with the gas passage, the other end of each third channel penetrates through the lifter base to be connected with a bottom sweeping gas source, and each third channel is used for introducing bottom sweeping gas into the gas channel so as to sweep the bottom of the substrate tray.
In yet another aspect, the present invention also provides a purging method using a chemical vapor deposition apparatus as described above, comprising: driving the shaft structure to move in the vertical direction so as to enable the support base to be at a preset treatment position; and the shielding cover is in a closed state, and purge gas is introduced into the gas passage so as to purge the bottom of the substrate tray.
Compared with the prior art, the invention has one of the following advantages:
according to the invention, the shielding cover is arranged, and when the shielding cover is closed, the gap between the hole wall of the shaft hole of the shielding cover and the outer side wall of the shaft structure forms a gas passage for purging the bottom of the substrate tray, so that the purging can be performed according to the purging requirement of the bottom of the substrate tray under the condition that the structure of the shaft structure is not changed.
The shielding cover provided by the invention has the same cross section shape as the radial cross section of the shaft structure, and corresponds to the shaft structure one by one, so that gaps between the shielding cover and the shaft structure are the same along the circumferential direction. Therefore, the gaps between the shielding cover and the shaft structure are identical in the circumferential direction, and the purpose of uniformly purging the bottom of the substrate tray can be achieved.
The cross section shape of the shielding cover provided by the invention is not identical with the cross section of the shaft structure, so that the gaps between the shielding cover and the shaft structure are not identical in the circumferential direction. Therefore, the gap between the shielding cover and the shaft structure is different in circumferential direction, so that the gap width of the gap can be adjusted at any time according to the bottom purging requirement of the substrate tray and the flow of gas, and the purpose of flexibly purging the bottom of the substrate tray is achieved.
The shielding cover comprises a first cover plate piece and a second cover plate piece, wherein the outer edge of the first cover plate piece is hinged with one side of the horizontal ring part, and the outer edge of the second cover plate piece is hinged with the other side of the horizontal ring part; the first cover plate piece and the second cover plate piece are oppositely arranged, and when the first cover plate piece and the second cover plate piece are in a closed state, the inner side edge of the first cover plate piece and the inner side edge of the second cover plate piece are spliced to form the shaft hole. Therefore, when the first cover plate piece and the second cover plate piece are in an open-close state, the support base can be moved out of or into the cavity, and then the first cover plate piece and the second cover plate piece are closed to purge the bottom of the substrate tray.
The shielding cover is made of ceramic materials or aluminum materials, and the thickness range of the shielding cover is 10-15 mm. Therefore, when the bottom of the substrate tray is purged, the shielding cover with the thickness can not be blown up or vibrate randomly, so that the purging effect is affected.
Drawings
FIG. 1 is a schematic diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a substrate carrier assembly according to an embodiment of the present invention;
FIG. 3 is a schematic view of the shaft structure of the substrate carrier assembly according to one embodiment of FIG. 2;
FIG. 4 is a schematic radial cross-sectional view of a shaft structure in the substrate carrier assembly provided in one embodiment in FIG. 2;
FIG. 5 is a schematic view of a shield cover of a shaft structure in the substrate carrier assembly provided in one embodiment of FIG. 2;
FIG. 6 is a schematic flow diagram of a purging method performed using the chemical vapor deposition apparatus shown in FIG. 1;
FIG. 7 is a schematic cross-sectional view of a chemical vapor deposition apparatus along the direction B-B shown in FIG. 4 according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of a chemical vapor deposition apparatus along A-A direction shown in FIG. 4 according to an embodiment of the present invention.
Detailed Description
The substrate support assembly and the substrate processing apparatus according to the present invention are described in further detail below with reference to the accompanying drawings and detailed description. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.
As shown in fig. 1, the present embodiment provides a chemical vapor deposition apparatus, including: a reaction chamber 100, the reaction chamber 100 comprising a top wall, a bottom wall, and a side wall surrounding the bottom wall; a gas shower head 120 is disposed at the top end of the reaction chamber 100, a substrate bearing assembly 130 is disposed below the gas shower head 120, and a substrate is disposed at the top end of the substrate bearing assembly 130. The gas shower head 120 is connected to an external gas source 110, and is used for uniformly injecting a reaction gas from the reaction gas source into the reaction chamber 100, so as to implement a processing treatment on the substrate.
The chemical vapor deposition apparatus includes: and a heater for heating the substrate carrying assembly 130, wherein the reaction gas reaches the surface of the substrate carrying assembly 130 to perform chemical reaction, and a thin film is formed on the surface of the substrate.
The substrate carrier assembly 130 is described in detail as follows:
FIG. 2 is a schematic view of a substrate carrier assembly according to an embodiment of the present invention; FIG. 3 is a schematic view of the shaft structure of the substrate carrier assembly provided in one embodiment in FIG. 2; FIG. 4 is a schematic radial cross-sectional view of a shaft structure in the substrate carrier assembly provided in one embodiment in FIG. 2; fig. 5 is a schematic view of a shielding cover of a shaft structure in the substrate carrier assembly according to the embodiment of fig. 2.
Referring to fig. 2 to 5, the substrate carrying assembly 130 includes: a liner 400 disposed in a mounting opening on a bottom wall of the reaction chamber 100; a shielding cover 310, wherein the shielding cover 310 is connected with the inner liner 400; a support base comprising a shaft structure 300 and a substrate tray 200; the shielding cover 310 is provided with a shaft hole 3103 (refer to fig. 5) matched with the shaft structure 300; the top end of the shaft structure 300 is connected with the substrate tray 200, and the bottom end of the shaft structure 300 penetrates through the shaft hole 3103 and is arranged on the lifter base 800; when the shielding cover 310 is closed, a gap between the inner liner 400 and the outer side wall of the shaft structure 300 and a gap between the hole wall of the shaft hole 3103 of the shielding cover 310 and the outer side wall of the shaft structure 300 form a gas passage for purging the bottom of the substrate tray 200.
In this embodiment, the shielding cover 310 is connected to the bottom wall of the reaction chamber around the installation opening through the liner 400, and the shielding cover 310 is movably connected to the liner 400.
In one example, the liner is not included, the shielding cover is connected with the bottom wall of the reaction chamber around the mounting opening, and the shielding cover and the bottom wall of the reaction chamber can be fixedly connected or movably connected.
With continued reference to fig. 2, the liner 400 includes a horizontal collar portion 4101 and an extension collar portion 4102 coupled thereto; the horizontal ring 4101 is supported on the bottom wall of the reaction chamber at the edge of the mounting opening; the extension ring 4102 extends along the mounting opening sidewall in the direction of the elevator base 800, and the liner 400 is configured to isolate the bottom purge gas.
With continued reference to fig. 3 and 4, the radial cross-section of the shaft structure 300 includes an annular segment 3201, and a first projection 3202 and a second projection 3203 extending from the annular segment to two sides, respectively. Specifically, the radial width of the annular segment 3201 is less than the radial width between the first projection 3202 and the second projection 3203. Alternatively, the first protruding part 3202 is identical to the second protruding part 3203 in structural shape.
The center of the annular segment 3201 is provided with a central channel 303 (see fig. 3) for receiving wires connecting the substrate tray 200 to a power source located outside the reaction chamber 100; the first protruding portion 3202 is provided with a first channel 301 (see fig. 3), the second protruding portion 3203 is provided with a second channel 302 (see fig. 3), an edge purge gas is introduced into the first channel 301 to purge the edge of the substrate to be processed on the substrate tray 200, the second channel 302 is used for vacuumizing to adsorb the substrate to be processed, and is also used for conveying a heat conducting gas between the substrates after vacuumizing is stopped, so that the heat transfer of the substrate bearing assembly to the substrates is uniform, and optionally, the heat conducting gas comprises helium.
With continued reference to fig. 5, the shielding cover 310 includes a first cover plate 3101 and a second cover plate 3102, where an outer edge of the first cover plate 3101 is hinged to one side of the horizontal ring portion, and an outer edge of the second cover plate 3102 is hinged to the other side of the horizontal ring portion; the first cover plate 3101 is disposed opposite to the second cover plate 3102, and when both the first cover plate 3101 and the second cover plate 3102 are in a closed state, the inner edge of the first cover plate 3101 and the inner edge of the second cover plate 3102 are spliced to form the shaft hole 3103.
It can be seen that when the first cover plate 3101 and the second cover plate 3102 are in the open/close state, the support base can be moved out of or into the cavity (as shown in fig. 2, reference numeral 600 in the drawing indicates the moved-out or moved-in state of the support base), and after the support base is moved in from outside the cavity, the first cover plate 3101 and the second cover plate 3102 are closed, so as to purge the bottom of the substrate tray.
In one embodiment, the cross-sectional shape of the shielding cover 310 is the same as the radial cross-sectional shape of the shaft structure 300, and corresponds one-to-one (specifically, the shape of the shaft hole 3103 on the shielding cover is the same as the radial cross-sectional shape of the shaft structure 300, that is, the edges of the shaft hole 3103 correspond one-to-one to the annular section 3201, the first protruding portion 3202 and the second protruding portion 3203 of the shaft structure 300), so that the gap between the shielding cover 310 and the shaft structure 300 is the same in the circumferential direction. Therefore, the gaps between the shielding cover and the shaft structure are identical in the circumferential direction, and the purpose of uniformly purging the bottom of the substrate tray can be achieved.
In some other embodiments, the cross-sectional shape of the shielding cap 310 is not exactly the same as the cross-section of the shaft structure 300, such that the gap between the shielding cap 310 and the shaft structure 300 is circumferentially different. Therefore, since the gaps between the shielding cover 310 and the shaft structure 300 are different in circumferential direction, the gap width of the gap can be adjusted at any time according to the bottom purging requirement of the substrate tray and the flow of the gas, so as to achieve the purpose of flexibly purging the bottom of the substrate tray. For example: the film thickness generated by a certain area of the substrate is thinner, so that the gap between the corresponding position of the shielding cover and the shaft structure is increased, and the film thickness generated by a certain area of the substrate is thicker, so that the gap between the corresponding position of the shielding cover and the shaft structure is reduced. Therefore, the adjustability of the thickness of a certain area of the substrate can be realized by changing the shape of the shielding cover according to actual needs.
In this embodiment, the thickness of the shielding cover 310 ranges from 10mm to 15mm, so that it is known that when the bottom of the substrate tray is purged, the shielding cover cannot be blown up or vibrate randomly, and the purging effect is affected. The shielding cover is made of ceramic materials or aluminum materials.
With continued reference back to fig. 2, the substrate carrier assembly provided in this embodiment further includes: and a bellows 700 disposed around the outside of the extension ring 4102, one end of which is hermetically connected to the bottom wall of the reaction chamber 100, and the other end of which is hermetically connected to the elevator base 800. The embodiment further includes: a gas collecting ring (500), wherein the gas collecting ring 500 is disposed around the substrate tray 200 and is fixed on a sidewall of the reaction chamber 100, and a top surface of the gas collecting ring 500 has the same height as a top surface of the substrate tray 200. The gas collecting ring 500 serves on the one hand to provide a gas supply channel and on the other hand also to form a uniform gas extraction channel.
The embodiment further includes: the top end of the shaft structure 310 is connected to the bottom end of the substrate tray 200 through the first shaft flange 320, and the bottom end thereof is disposed on the elevator base 800 through the second shaft flange 330, and a plurality of third passages 810 (see fig. 1) are circumferentially spaced around the second shaft flange 330.
Because more gas circuits and circuits are required to be laid out on the second flange 330, in order to arrange so many gas circuits and circuits, the size of the second flange 330 is larger, so that when the support base moves upwards, the shielding cover 330 is opened, enough space can be reserved for the second flange 330 to enable the support base to move upwards, and the distance between the support base and the gas shower head reaches the distance required by the process.
The liner 400 serves to protect the bellows 700 from corrosion.
One end of each third channel 810 penetrates through the second shaft flange 330 to be communicated with the gas passage, and the other end penetrates through the lifter base 800 to be connected with a bottom purging gas source, and each third channel 810 is used for introducing bottom purging gas into the gas channel to purge the bottom of the substrate tray 200.
The first channel 301 and the second channel 302 extend along the axial direction of the shaft structure 300, one end of the first channel 301 is connected to an edge purging gas, and the other end is communicated with an edge channel inside the substrate tray 200, so as to purge the edge of the substrate to be processed on the substrate tray 200.
One end of the second channel 302 is communicated with a vacuum pump, and the other end is communicated with the inside of the substrate tray 200, and the second channel 302 is vacuumized to adsorb and fix the substrate to be processed.
On the other hand, as shown in fig. 6, the present embodiment also provides a purging method using the chemical vapor deposition apparatus as described above, including: and S1, driving the shaft structure to move in the vertical direction so as to enable the support base to be at a preset treatment position.
And S2, the shielding cover is in a closed state, and purge gas is introduced into the gas passage through the shaft structure so as to purge the bottom of the substrate tray.
And S3, introducing edge purging gas into the first channel 301 to purge the edge of the substrate to be processed on the substrate tray.
Specifically, as shown in fig. 7 and 8, a plurality of edge purge passages 201 are disposed in the substrate tray 200 at intervals or are mutually communicated, and an air outlet of each edge purge passage 201 is disposed at an edge of the top surface of the substrate tray 200 and is disposed near the edge of the substrate to be processed, and an air inlet of each edge purge passage 201 is communicated with the first channel 301 in the shaft structure 300. The gas path further includes a gap 202 between the sidewall of the gas gathering ring 500 and the sidewall of the substrate tray 200, so that the third channel 810 may also purge the gap 202 between the sidewall of the gas gathering ring 500 and the sidewall of the substrate tray 200 when the purge gas is introduced into the gas path. The bottom wall purge gas and the edge purge gas may be the same or different in composition.
In summary, in this embodiment, by providing the shielding cover, when the shielding cover is closed, the gap between the hole wall of the shaft hole of the shielding cover and the outer sidewall of the shaft structure (the gap between the inner liner and the outer sidewall of the shaft structure, and the gap between the hole wall of the shaft hole of the shielding cover and the outer sidewall of the shaft structure) forms a gas passage for purging the bottom of the substrate tray, so it can be known that the embodiment can purge according to the purging requirement of the bottom of the substrate tray without changing the structure of the shaft structure, thereby improving the deposition performance of the substrate to be processed.
The cross section shape of the shielding cover provided by the embodiment is the same as the radial cross section shape of the shaft structure, and the shielding cover and the shaft structure are in one-to-one correspondence, so that gaps between the shielding cover and the shaft structure are the same along the circumferential direction. Therefore, the gaps between the shielding cover and the shaft structure are identical in the circumferential direction, and the purpose of uniformly purging the bottom of the substrate tray can be achieved.
The cross section shape of the shielding cover provided by the embodiment is not identical to the cross section of the shaft structure, so that gaps between the shielding cover and the shaft structure are not identical in the circumferential direction. Therefore, the gap between the shielding cover and the shaft structure is different in circumferential direction, so that the gap width of the gap can be adjusted at any time according to the bottom purging requirement of the substrate tray and the flow of gas, and the purpose of flexibly purging the bottom of the substrate tray is achieved. For example: the film thickness generated by a certain area of the substrate is thinner, so that the gap between the corresponding position of the shielding cover and the shaft structure is increased. Therefore, the adjustability of the thickness of a certain area of the substrate can be realized by changing the shape of the shielding cover according to actual needs.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate describing the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "secured" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
While the present disclosure has been illustrated by the description of the alternative embodiments, it should be appreciated that the description is not intended to limit the disclosure. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (15)
1. A substrate carrier assembly for a chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising a reaction chamber having a bottom wall provided with a mounting opening, the substrate carrier assembly comprising:
the shielding cover is connected with the edge of the mounting opening; a support base including a shaft structure and a substrate tray; the shielding cover is provided with a shaft hole matched with the shaft structure, so that the shaft structure passes through the shaft hole;
the shielding cover comprises a first cover plate piece and a second cover plate piece, wherein the outer edge of the first cover plate piece is hinged with one side edge of the installation opening, and the outer edge of the second cover plate piece is hinged with the other side edge of the installation opening; the first cover plate piece and the second cover plate piece are arranged oppositely, and when the first cover plate piece and the second cover plate piece are in a closed state, the inner side edge of the first cover plate piece and the inner side edge of the second cover plate piece are spliced to form the shaft hole;
the top end of the shaft structure is connected with the substrate tray, and the bottom end of the shaft structure penetrates through the shaft hole and is arranged on a lifter base;
and a gap between the hole wall of the shaft hole of the shielding cover and the outer side wall of the shaft structure forms a gas passage.
2. A substrate carrier assembly for a chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising a reaction chamber having a bottom wall provided with a mounting opening, the substrate carrier assembly comprising:
a liner positioned around the mounting opening;
the shielding cover is connected with the bottom wall of the reaction cavity through the lining; the shielding cover comprises a first cover plate piece and a second cover plate piece, wherein the outer edge of the first cover plate piece is movably connected with one side edge of the lining, and the outer edge of the second cover plate piece is movably connected with the other side edge of the lining; the first cover plate piece and the second cover plate piece are arranged oppositely;
a support base including a shaft structure and a substrate tray; when the first cover plate piece and the second cover plate piece are in a closed state, the inner side edge of the first cover plate piece and the inner side edge of the second cover plate piece are spliced into a shaft hole matched with the shaft structure, so that the shaft structure passes through the shaft hole;
the top end of the shaft structure is connected with the substrate tray, and the bottom end of the shaft structure penetrates through the shaft hole and is arranged on a lifter base;
and a gap between the hole wall of the shaft hole of the shielding cover and the outer side wall of the shaft structure forms a gas passage.
3. The substrate carrier assembly for a chemical vapor deposition apparatus of claim 2, wherein the liner comprises a horizontal ring portion and an extension ring portion connected thereto; the horizontal ring part is arranged on the bottom wall of the reaction cavity at the edge of the mounting opening; the extension ring portion extends along the mounting opening side wall toward the elevator base, and the liner is used for isolating bottom purge gas introduced into the gas passage.
4. A substrate carrier assembly for a chemical vapor deposition apparatus as recited in claim 3 wherein an outer edge of said first cover sheet is hinged to one side of said horizontal ring portion and an outer edge of said second cover sheet is hinged to the other side of said horizontal ring portion.
5. The substrate carrier assembly for a chemical vapor deposition apparatus of claim 1 or 4, wherein a radial cross section of the shaft structure comprises an annular section, first and second projections extending from the annular section to two sides, respectively;
the center of the annular section is provided with a central channel for accommodating wires for connecting the substrate tray with a power source positioned outside the reaction cavity; the first bulge is provided with a first channel, the second bulge is provided with a second channel, edge purging gas is introduced into the first channel to purge the edge of the substrate to be processed on the substrate tray, the second channel is used for vacuumizing to adsorb the substrate to be processed, and the second channel is also used for transmitting heat conducting gas between the substrate and the substrate tray.
6. The substrate carrier assembly for a chemical vapor deposition apparatus of claim 5, wherein the shielding cover has a cross-sectional shape identical to a radial cross-sectional shape of the shaft structure and corresponds one-to-one such that gaps between the shielding cover and the shaft structure are identical in a circumferential direction.
7. The substrate carrier assembly for a chemical vapor deposition apparatus of claim 5, wherein the cross-sectional shape of the shield cap is not exactly the same as the cross-section of the shaft structure such that a gap between the shield cap and the shaft structure is circumferentially different.
8. The substrate carrier assembly for a chemical vapor deposition apparatus of claim 5, wherein the thickness of the shielding cover ranges from 10mm to 15mm.
9. The substrate carrier assembly for a chemical vapor deposition apparatus of claim 5, wherein the material of the shield cap comprises a ceramic material or an aluminum material.
10. The substrate carrier assembly for a chemical vapor deposition apparatus of claim 5, wherein the first channel and the second channel extend in an axial direction of the shaft structure, one end of the first channel being connected to an edge purge gas, the other end being in communication with an edge channel inside the substrate tray for purging an edge of a substrate to be processed on the substrate tray;
one end of the second channel is communicated with the vacuum pump, the other end of the second channel is communicated with the inside of the substrate tray, the second channel is vacuumized to adsorb and fix the substrate to be processed, and the second channel is also used for communicating heat conducting gas and conveying transmission gas between the substrate and the substrate tray so as to realize uniform heat transfer between the substrate tray and the substrate.
11. A chemical vapor deposition apparatus, comprising: a reaction chamber; a gas shower head is arranged at the top end of the reaction cavity, and a substrate bearing assembly according to any one of claims 1-10 is arranged below the gas shower head.
12. The chemical vapor deposition apparatus of claim 11, further comprising: and the corrugated pipe is arranged around the outside of the mounting opening, one end of the corrugated pipe is in sealing connection with the bottom wall of the reaction cavity, and the other end of the corrugated pipe is in sealing connection with the lifter base.
13. The chemical vapor deposition apparatus of claim 12, further comprising: and the gas gathering ring is arranged around the substrate tray and is fixed on the side wall of the reaction cavity.
14. The chemical vapor deposition apparatus of claim 13, further comprising: the top end of the shaft structure is connected with the bottom end of the substrate tray through the first shaft flange, and the bottom end of the shaft structure is arranged on the lifter base through the second shaft flange;
one end of each third channel penetrates through the second shaft flange to be communicated with the gas passage, the other end of each third channel penetrates through the lifter base to be connected with a bottom sweeping gas source, and each third channel is used for introducing bottom sweeping gas into the gas passage so as to sweep the bottom of the substrate tray.
15. A purging method using the chemical vapor deposition apparatus according to any one of claims 11 to 14, comprising:
driving the shaft structure to move in the vertical direction so as to enable the support base to be at a preset treatment position;
and the shielding cover is in a closed state, and purge gas is introduced into the gas passage so as to purge the bottom of the substrate tray.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110345652.9A CN115142046B (en) | 2021-03-31 | 2021-03-31 | Substrate bearing assembly, chemical vapor deposition equipment and purging method |
| TW111106959A TWI813179B (en) | 2021-03-31 | 2022-02-25 | Substrate carrying component, chemical vapor deposition equipment and purging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110345652.9A CN115142046B (en) | 2021-03-31 | 2021-03-31 | Substrate bearing assembly, chemical vapor deposition equipment and purging method |
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| Publication Number | Publication Date |
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| CN115142046A CN115142046A (en) | 2022-10-04 |
| CN115142046B true CN115142046B (en) | 2024-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110345652.9A Active CN115142046B (en) | 2021-03-31 | 2021-03-31 | Substrate bearing assembly, chemical vapor deposition equipment and purging method |
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| CN (1) | CN115142046B (en) |
| TW (1) | TWI813179B (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000054137A (en) * | 1998-08-06 | 2000-02-22 | Anelva Corp | Purge gas introducing mechanism of substrate supporting mechanism |
| WO2002023587A2 (en) * | 2000-09-12 | 2002-03-21 | Applied Materials | Tungsten chamber with stationary heater |
| WO2004079811A1 (en) * | 2003-03-06 | 2004-09-16 | Sekisui Chemical Co., Ltd. | Plasma processing apparatus and method |
| CN101241844A (en) * | 2004-02-26 | 2008-08-13 | 应用材料有限公司 | In-situ dry clean chamber for front end of line fabrication |
| CN102317501A (en) * | 2007-12-15 | 2012-01-11 | 东京毅力科创株式会社 | Heat treatment apparatus, and method for controlling the same |
| CN105164307A (en) * | 2013-04-30 | 2015-12-16 | 东京毅力科创株式会社 | Film formation device |
| CN204982132U (en) * | 2015-09-06 | 2016-01-20 | 中微半导体设备(上海)有限公司 | Chemical vapor deposition or epitaxial layer growth reaction ware and substrate tray and back shaft thereof |
| CN108624955A (en) * | 2017-03-16 | 2018-10-09 | 北京北方华创微电子装备有限公司 | Reaction chamber and epitaxial growth equipment |
| CN109072427A (en) * | 2016-03-25 | 2018-12-21 | 应用材料公司 | Chamber liner for high-temperature process |
| CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
| US10612135B2 (en) * | 2016-07-19 | 2020-04-07 | Applied Materials, Inc. | Method and system for high temperature clean |
| CN111952233A (en) * | 2019-05-14 | 2020-11-17 | 北京北方华创微电子装备有限公司 | Edge purging device, pedestal system and process chamber |
| CN111979529A (en) * | 2019-05-22 | 2020-11-24 | Asm Ip 控股有限公司 | Substrate pedestal using edge rinse |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6709721B2 (en) * | 2001-03-28 | 2004-03-23 | Applied Materials Inc. | Purge heater design and process development for the improvement of low k film properties |
| US7648579B2 (en) * | 2004-02-13 | 2010-01-19 | Asm America, Inc. | Substrate support system for reduced autodoping and backside deposition |
| US20090120368A1 (en) * | 2007-11-08 | 2009-05-14 | Applied Materials, Inc. | Rotating temperature controlled substrate pedestal for film uniformity |
| US10312076B2 (en) * | 2017-03-10 | 2019-06-04 | Applied Materials, Inc. | Application of bottom purge to increase clean efficiency |
-
2021
- 2021-03-31 CN CN202110345652.9A patent/CN115142046B/en active Active
-
2022
- 2022-02-25 TW TW111106959A patent/TWI813179B/en active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000054137A (en) * | 1998-08-06 | 2000-02-22 | Anelva Corp | Purge gas introducing mechanism of substrate supporting mechanism |
| WO2002023587A2 (en) * | 2000-09-12 | 2002-03-21 | Applied Materials | Tungsten chamber with stationary heater |
| WO2004079811A1 (en) * | 2003-03-06 | 2004-09-16 | Sekisui Chemical Co., Ltd. | Plasma processing apparatus and method |
| CN101241844A (en) * | 2004-02-26 | 2008-08-13 | 应用材料有限公司 | In-situ dry clean chamber for front end of line fabrication |
| CN102317501A (en) * | 2007-12-15 | 2012-01-11 | 东京毅力科创株式会社 | Heat treatment apparatus, and method for controlling the same |
| CN105164307A (en) * | 2013-04-30 | 2015-12-16 | 东京毅力科创株式会社 | Film formation device |
| CN204982132U (en) * | 2015-09-06 | 2016-01-20 | 中微半导体设备(上海)有限公司 | Chemical vapor deposition or epitaxial layer growth reaction ware and substrate tray and back shaft thereof |
| CN109072427A (en) * | 2016-03-25 | 2018-12-21 | 应用材料公司 | Chamber liner for high-temperature process |
| US10612135B2 (en) * | 2016-07-19 | 2020-04-07 | Applied Materials, Inc. | Method and system for high temperature clean |
| CN108624955A (en) * | 2017-03-16 | 2018-10-09 | 北京北方华创微电子装备有限公司 | Reaction chamber and epitaxial growth equipment |
| CN111952233A (en) * | 2019-05-14 | 2020-11-17 | 北京北方华创微电子装备有限公司 | Edge purging device, pedestal system and process chamber |
| CN111979529A (en) * | 2019-05-22 | 2020-11-24 | Asm Ip 控股有限公司 | Substrate pedestal using edge rinse |
| CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202242194A (en) | 2022-11-01 |
| CN115142046A (en) | 2022-10-04 |
| TWI813179B (en) | 2023-08-21 |
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