CN101174542A - Gas injection apparatus - Google Patents
Gas injection apparatus Download PDFInfo
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- CN101174542A CN101174542A CNA2006101142058A CN200610114205A CN101174542A CN 101174542 A CN101174542 A CN 101174542A CN A2006101142058 A CNA2006101142058 A CN A2006101142058A CN 200610114205 A CN200610114205 A CN 200610114205A CN 101174542 A CN101174542 A CN 101174542A
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- fumarole
- gas
- gas injection
- injection apparatus
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Abstract
The invention discloses a gas injection device used for feeding gas to a reaction chamber, which comprises a body, a gas channel arranged in the body, a nozzle with arch-shaped surface arranged at the front end of the body, and a plurality of orifices arranged along the arch surface of the nozzle. The diameters of the orifices are 0.3 to 0.7 mm, and the gas is sprayed into the reaction chamber through the gas channel and via the orifices. The central orifice is arranged along the central axis direction of the gas injection device, the peripheral orifices are arranged on the periphery of the central orifice, and have 0 to 90 degree included angle with the central orifice. The peripheral orifices are radiated from the central orifice to the periphery, and the radiation angle is 15 to 30 degrees. The included angle between orifices is 5 to 15 degrees. The invention has the advantages that the structure is simple, the gas injection covering area is large, and the gas is distributed evenly, thereby especially suitable for gas supply systems of semiconductor silicon wafer processing equipment, and also suitable for the gas supply in other occasions.
Description
Technical field
The present invention relates to a kind of distribution device in gas-fluid, relate in particular to a kind of feeder of semi-conductor silicon chip process equipment.
Background technology
In the microelectronic industry semiconductor wafer manufacturing process, need utilize plasma that wafer is carried out different PROCESS FOR TREATMENT, wherein plasma generally is to be formed through radio-frequency drive by the reacting gas that the nozzle that is positioned at the reaction chamber top sprays, bias voltage by electrostatic chuck makes plasma bombardment be positioned at wafer on the chuck then, thereby realizes Etch (etching), CVD technologies such as (chemical vapour deposition (CVD)s) to wafer.And entering the mode of reaction chamber, gas directly determined gas in the uniformity of chamber flow field and the uniformity of distribution, can be implemented in the technical process reaction gas physical efficiency with the wafer surface even contact and identical wafer surface air pressure is arranged, and continue to make the residual process gas on surface to be taken away uniformly after reaction is finished, thereby finally improve the etch rate of wafer surface or the uniformity of CVD speed.
At present, in the process gas injected system that adopts in the semiconductor etching device, process gas distributes in order to obtain comparatively uniformly in reaction chamber, the nozzle that various structures are arranged, the non-uniformity problem of the etch rate that the inhomogeneities of air inlet causes but the fumarole form ubiquity of present nozzle.
As shown in Figure 1 and Figure 2, be a kind of nozzle of prior art, a vertical center fumarole 3 is opened at its center, evenly opens 8 peripheral fumaroles 2 that the aperture is smaller all around, and its dispersion angle is 20 ~ 35 degree.
This nozzle does not have gas to spray in the space of dispersing of 0 ~ 20 degree and 35 ~ 90 degree, so just make that the gas that sprays into is even inadequately, bigger blind area 1 gas of inner existence can't directly spray into, the gas area coverage is also less, and the diameter of its single spray orifice is all at 1mm ~ 2.5mm, the aperture is bigger, and gas is difficult to form the uniform spray effect of thread shape when spraying into chamber (reaction chamber).
As shown in Figure 3, be the another kind of nozzle of prior art, it has adopted the sprinkler design of seedpod of the lotus head, and peripheral fumarole 2 is evenly dispersed toward both sides along center line by certain angle.
Because the angle between the peripheral fumarole 2 is bigger, be that dispersion angle is too big, also there is bigger blind area 1 between each peripheral fumarole 2, and the diameter of peripheral fumarole 2 is also bigger, exist air-flow can not be sprayed at the chamber the inside uniformly equally, and it is bigger respectively to restraint air-flow, is difficult in wafer surface and forms uniform gas.
Summary of the invention
The purpose of this invention is to provide big, the uniform gas injection apparatus of distribution of gas of area that a kind of simple in structure, gas injection covers.
The objective of the invention is to be achieved through the following technical solutions:
Gas injection apparatus of the present invention, be used for to the reaction chamber air feed, comprise body, be provided with gas passage in the body, the front end of described body is provided with the surface and is the shower nozzle of cambered surface, and a plurality of fumaroles are set along the cambered surface of shower nozzle, and the diameter of described fumarole is 0.3～0.7 millimeter, gas sprays into reaction chamber by gas passage and by fumarole.
Described shower nozzle is hemispherical.
The diameter of described fumarole is 0.4～0.6 millimeter.
The diameter of described fumarole is 0.5 millimeter.
Described fumarole comprises center fumarole and peripheral fumarole, and described center fumarole is along the central axial direction setting of gas injection apparatus, described peripheral fumarole be arranged in the center fumarole around, and become 0～90 ° angle with the center fumarole.
Described peripheral fumarole becomes 8～60 ° of angles with the center fumarole.
To radiation all around, radiation angle is 15～30 ° to described peripheral fumarole from the center fumarole.
Described radiation angle is 20 °.
Angle between described fumarole and the adjacent fumarole is 5～15 °.
Angle between described fumarole and the adjacent fumarole is 8～10 °.
As seen from the above technical solution provided by the invention, gas injection apparatus of the present invention, because being provided with the surface, front end is the shower nozzle of cambered surface, and a plurality of fumaroles are set along the cambered surface of shower nozzle, the diameter of described fumarole is 0.3～0.7 millimeter, and diameter is less, can the closeer layout fumarole of multi-angle, the area that make that the blind area between the fumarole is less, simple in structure, the gas injection covers is big, distribution of gas is even.
Be particularly useful for also being applicable to the air feed of other occasion in the air supply system of semi-conductor silicon chip process equipment.
Description of drawings
Fig. 1 is the structural representation one of the gas injection apparatus (nozzle) of prior art one;
Fig. 2 is the structural representation two of the gas injection apparatus of prior art one;
Fig. 3 is the structural representation of the gas injection apparatus of prior art two;
Fig. 4 is the structural representation of gas injection apparatus of the present invention;
Fig. 5 is the fumarole distribution schematic diagram of gas injection apparatus of the present invention;
Fig. 6 is the structural representation of the shower nozzle of gas injection apparatus of the present invention.
Embodiment
Gas injection apparatus of the present invention is used for to the reaction chamber air feed.Described reaction chamber can be the reaction chamber of inductance coupled plasma device, also can be the reaction chamber of other semiconductor processing equipment, or other cavity.
As shown in Figure 4, gas injection apparatus of the present invention comprises body 5, is provided with gas passage 4 in the body 5, and the front end of body 5 is provided with the surface and is the shower nozzle 6 of cambered surface, and a plurality of fumaroles being set along the cambered surface of shower nozzle 6, gas sprays into reaction chamber by gas passage 4 and by fumarole.
As shown in Figure 6, shower nozzle 6 is preferably hemispherical.It also can be other arc shape.
The diameter of described fumarole is 0.3～0.7 millimeter, can be preferred diameter such as 0.3,0.4,0.5,0.6,0.7 millimeter, and preferable diameter is 0.4～0.6 millimeter, is preferably 0.5 millimeter.This size is more less than the size of fumarole of the prior art, and in this size range, that fumarole can be arranged is closeer, and the blind area 1 between fumarole and fumarole is less, can make the even injection of gas under the situation that guarantees gas flow.
Described fumarole comprises center fumarole 3 and peripheral fumarole 2, described center fumarole 3 is along the central axial direction setting of gas injection apparatus, described peripheral fumarole 2 be arranged in center fumarole 3 around, and becoming 0～90 ° angle with the center fumarole, the area that the gas injection covers is big.
The angle of described peripheral fumarole 2 and center fumarole 3 can be optimized angles such as 5,15,30,50,70,80,85 °, generally is that the peripheral fumarole 2 nearer apart from the center is less with the angle of center fumarole 3, and angle at a distance is bigger.Preferably between 8～60 °.
Angle α between described fumarole and the adjacent fumarole is preferably 5～15 °, and the best is 8～10 °.Can be optimized angles such as 5,6,7,8,10,12,13,14,15 °, wherein 8 ° be best angle.
As shown in Figure 5, the distribution mode of fumarole is, peripheral fumarole 2 from center fumarole 3 to around radiation, radiation angle β is 15～30 °, can be optimized angles such as 15,16,18,20,23,26,29,30 °, is preferably 20 °.
Also can adopt other distribution mode as required, as distribution mode gradually close around even distribution, the middle mind-set or that gradually dredge.
The present invention is particularly useful for also being applicable to the air feed of other occasion in the air supply system of semi-conductor silicon chip process equipment.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (10)
1. gas injection apparatus, be used for to the reaction chamber air feed, comprise body, be provided with gas passage in the body, it is characterized in that the front end of described body is provided with the surface and is the shower nozzle of cambered surface, and along the cambered surface of shower nozzle a plurality of fumaroles is set, the diameter of described fumarole is 0.3～0.7 millimeter, and gas sprays into reaction chamber by gas passage and by fumarole.
2. gas injection apparatus according to claim 1 is characterized in that, described shower nozzle is hemispherical.
3. gas injection apparatus according to claim 1 and 2 is characterized in that, the diameter of described fumarole is 0.4～0.6 millimeter.
4. gas injection apparatus according to claim 3 is characterized in that, the diameter of described fumarole is 0.5 millimeter.
5. gas injection apparatus according to claim 1 and 2, it is characterized in that, described fumarole comprises center fumarole and peripheral fumarole, described center fumarole is along the central axial direction setting of gas injection apparatus, described peripheral fumarole be arranged in the center fumarole around, and become 0～90 ° angle with the center fumarole.
6. gas injection apparatus according to claim 5 is characterized in that, described peripheral fumarole becomes 8～60 ° of angles with the center fumarole.
7. gas injection apparatus according to claim 5 is characterized in that, to radiation all around, radiation angle is 15～30 ° to described peripheral fumarole from the center fumarole.
8. gas injection apparatus according to claim 7 is characterized in that, described radiation angle is 20 °.
9. gas injection apparatus according to claim 1 and 2 is characterized in that, the angle between described fumarole and the adjacent fumarole is 5～15 °.
10. gas injection apparatus according to claim 9 is characterized in that, the angle between described fumarole and the adjacent fumarole is 8～10 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101142058A CN100541707C (en) | 2006-11-01 | 2006-11-01 | Gas injection apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101142058A CN100541707C (en) | 2006-11-01 | 2006-11-01 | Gas injection apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101174542A true CN101174542A (en) | 2008-05-07 |
| CN100541707C CN100541707C (en) | 2009-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101142058A Active CN100541707C (en) | 2006-11-01 | 2006-11-01 | Gas injection apparatus |
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| CN (1) | CN100541707C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157327A (en) * | 2009-12-31 | 2011-08-17 | 丽佳达普株式会社 | Gas supply structure of substrate processing apparatus |
| CN102373439A (en) * | 2010-08-24 | 2012-03-14 | 上海博恩世通光电股份有限公司 | Chemical deposition reactor and spraying device thereof |
| CN102433548A (en) * | 2011-12-06 | 2012-05-02 | 山东国晶新材料有限公司 | Uniform gas flow gas inlet device and uniform gas inlet method for vapor deposition |
| CN103614704A (en) * | 2013-11-06 | 2014-03-05 | 东莞市中镓半导体科技有限公司 | Precursor flow field control rod |
| WO2016150042A1 (en) * | 2015-03-25 | 2016-09-29 | 沈阳拓荆科技有限公司 | Spraying head of cambered surface applicable to semiconductor plasma treatment device |
-
2006
- 2006-11-01 CN CNB2006101142058A patent/CN100541707C/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157327A (en) * | 2009-12-31 | 2011-08-17 | 丽佳达普株式会社 | Gas supply structure of substrate processing apparatus |
| CN102157327B (en) * | 2009-12-31 | 2014-12-03 | 丽佳达普株式会社 | Gas supply structure of substrate processing apparatus |
| CN102373439A (en) * | 2010-08-24 | 2012-03-14 | 上海博恩世通光电股份有限公司 | Chemical deposition reactor and spraying device thereof |
| CN102373439B (en) * | 2010-08-24 | 2014-02-05 | 上海博恩世通光电股份有限公司 | Chemical deposition reactor and spraying device thereof |
| CN102433548A (en) * | 2011-12-06 | 2012-05-02 | 山东国晶新材料有限公司 | Uniform gas flow gas inlet device and uniform gas inlet method for vapor deposition |
| CN102433548B (en) * | 2011-12-06 | 2013-06-19 | 山东国晶新材料有限公司 | Uniform gas flow gas inlet device and uniform gas inlet method for vapor deposition |
| CN103614704A (en) * | 2013-11-06 | 2014-03-05 | 东莞市中镓半导体科技有限公司 | Precursor flow field control rod |
| CN103614704B (en) * | 2013-11-06 | 2016-05-11 | 东莞市中镓半导体科技有限公司 | A kind of predecessor flow field control rod |
| WO2016150042A1 (en) * | 2015-03-25 | 2016-09-29 | 沈阳拓荆科技有限公司 | Spraying head of cambered surface applicable to semiconductor plasma treatment device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100541707C (en) | 2009-09-16 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |