CN100541709C - Substrate board treatment and substrate processing method using same - Google Patents
Substrate board treatment and substrate processing method using same Download PDFInfo
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- CN100541709C CN100541709C CNB2007100040884A CN200710004088A CN100541709C CN 100541709 C CN100541709 C CN 100541709C CN B2007100040884 A CNB2007100040884 A CN B2007100040884A CN 200710004088 A CN200710004088 A CN 200710004088A CN 100541709 C CN100541709 C CN 100541709C
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Abstract
A kind of substrate board treatment comprises: substrate holding mechanism, and it keeps the substrate of process object; Second fluid nozzle, it supplies with drop to the substrate surface that is maintained on the aforesaid substrate maintaining body.Second fluid nozzle has the liquid spraying outlet of housing, ejection treatment fluid and the gas vent of ejection gas, this second fluid nozzle imports treatment fluid and gas in above-mentioned housing, outside above-mentioned housing, to mix the drop that forms above-mentioned treatment fluid from the treatment fluid of aforesaid liquid ejiction opening ejection and the gas that sprays from the above-mentioned gas ejiction opening, this drop will be supplied on the substrate.The density of drop on the aforesaid substrate surface of supplying with from second fluid nozzle is per minute 10
8Individual/more than the square millimeter.
Description
Technical field
The present invention relates to a kind of substrate board treatment and substrate processing method using same that is used for substrate surface is carried out clean etc.The substrate that becomes process object for example comprises: semiconductor wafer, base plate for liquid crystal display device, plasma display substrate, FED (Field Emission Display: Field Emission Display) with substrate, CD substrate, disk substrate, optomagnetic base-board for plate, base board for optical mask etc.
Background technology
In the manufacturing process of semiconductor device, the clean of foreign matter (particle etc.) that is used to remove semiconductor wafer (hereinafter referred to as " wafer ") surface is indispensable.Substrate board treatment being used for the clean wafers surface has second fluid nozzle, and this second fluid nozzle sprays (as US 2002/0059947 A1) by making treatment fluid (cleaning fluid) and gas mix the drop that generates treatment fluid.
Fig. 9 is the Ning section of the structure example of expression second fluid nozzle.This second fluid nozzle 51 includes the urceolus 52 that constitutes housing and is embedded in its inner inner core 53.Urceolus 52 and inner core 53 have shape roughly cylindraceous, and total central shaft.The inner space of inner core 53 is a treatment fluid stream 56, the pure water (deionized water: DeIonized Water) that can import as treatment fluid (cleaning fluid) to treatment fluid stream 56 from the upper end of inner core 53.The lower end of treatment fluid stream 56 is used as treatment fluid ejiction opening 57 towards the below opening.
On the other hand, between inner core 53 and urceolus 52, be formed with gap roughly cylindraceous, be gas flow path 54.The lower loop of gas flow path 54 is used as the gas vent 58 of ring-type around treatment fluid ejiction opening 57 openings.Gas flow path 54 is connected with the gas introduction tube 55 that connects urceolus 52, imports the nitrogen of high pressure via this gas introduction tube 55.
When importing pure water to treatment fluid stream 56 and when gas flow path 54 imports nitrogen, in the time of from treatment fluid ejiction opening 57 ejection pure water, spraying nitrogen from gas vent 58.These pure water and nitrogen are respectively from treatment fluid ejiction opening 57 and gas vent 58 ejections, by colliding the drop that (mixing) forms pure water in its vicinity.This drop becomes jet flow, on the surface of the wafer W of colliding thereunder to be disposed.At this moment, the impurity such as particle attached to the wafer W surface are removed to physical property by the kinetic energy of the drop of pure water.
The jet cleaning of being undertaken by second fluid nozzle with scrub or other physics clean such as ultrasonic waves for cleaning are compared, less to the damage (particularly to damage) of substrate at the formed pattern of substrate surface.Therefore, be to be used to form the strong selection that the low damage of the substrate surface of fine pattern is cleaned.
But, though be the jet cleaning of being undertaken by second fluid nozzle, be not have fully to the damage of substrate, along with at the formed pattern of substrate surface further by miniaturization, require lower damage.
Summary of the invention
The substrate board treatment and the substrate processing method using same that the purpose of this invention is to provide the lower damage in a kind of processing substrate that realizes using second fluid nozzle.
In order to reduce damage, at first can consider to reduce the speed that reduces the drop that sprays from second fluid nozzle to the gas flow of second fluid nozzle input to the pattern of substrate surface.But when reducing the input gas flow, it is big that the particle diameter of formed drop becomes, and correspondingly, drop density tails off.Thus, not only bad for the damage that reduces the pattern of substrate surface, foreign matter is removed also variation of ability.This is because when drop density reduced, drop collided the probability step-down of the foreign matter on the substrate.
The inventor finishes until of the present invention, and the result that cleans of the substrate that carries out of research and utilization second fluid nozzle is repeatedly, finds out that what substantial connection is arranged with the foreign matter ability of removing is drop density.
That is, the substrate board treatment of one aspect of the invention comprises substrate holding mechanism, and it keeps the substrate of process object; Second fluid nozzle.This second fluid nozzle has the liquid spraying outlet of housing, ejection treatment fluid and the gas vent of ejection gas, this second fluid nozzle imports treatment fluid and gas in above-mentioned housing, outside above-mentioned housing (only be liquid spraying outlet near), to mix (to liquid jet gas) from the treatment fluid of aforesaid liquid ejiction opening ejection with from the gas that the above-mentioned gas ejiction opening sprays, and form the drop of above-mentioned treatment fluid, this drop is supplied on the surface of the substrate that the aforesaid substrate maintaining body is kept.The drop of supplying with from above-mentioned second fluid nozzle is per minute 10 in the lip-deep density of aforesaid substrate (drop density)
8Individual/as (to be preferably per minute 1.2 * 10 more than the square millimeter
8Individual/more than the square millimeter.More preferably per minute 5 * 10
8Individual/square millimeter is above, per minute 8 * 10
8Individual/square millimeter is following).
According to this structure, can form fine droplet by mix type nozzle.This mix type nozzle makes gas and liquid mix outside housing and forms droplet stream.And the drop density on the substrate surface that substrate holding mechanism kept is a per minute 10
8Individual/(1 square millimeter unit area reaches 10 to square millimeter in one minute
8The density of individual drop) more than, thereby shown in the experimental result as hereinafter described, can access good foreign matter and remove performance.That is,, also can realize that needed foreign matter removes performance by drop density being controlled at above-mentioned scope even for the damage that reduces the pattern of substrate surface reduces under the situation of gas flow.So, can realize that low damage and foreign matter remove well behaved clean, can be formed with the clean of the substrate of atomic thin pattern well.
On the drop density of substrate surface, be limited to for example per minute 10
9Individual/square millimeter.This higher limit is mainly determined by the structural limit of external mix type second fluid nozzle.
Treatment fluid can be a pure water (deionized water) for example, also can be ammonia, aqueous hydrogen peroxide solution, with the such soup of the mixed liquor of water.
The above-mentioned gas ejiction opening can form the toroidal that surrounds the aforesaid liquid ejiction opening.At this moment, preferred, the external diameter of the gas vent of this toroidal is more than 2 millimeters, below 3.5 millimeters, and the width of the gas vent of this toroidal is (more preferably more than 0.05 millimeter, below 0.15 millimeter) more than 0.05 millimeter, below 0.2 millimeter.
Preferably, the aforesaid substrate processing unit is the air inclusion feed mechanism also, and this gas supply mechanism is supplied with above-mentioned gas with the flow of per minute below 17 liters to above-mentioned housing.By with this low discharge supply gas, thereby the speed can suppress drop and collide on the substrate time can reduce the damage to the pattern of substrate surface.And, because the drop density height is removed performance so can realize sufficient foreign matter.So, can make high foreign matter remove the reduction of ability and damage and deposit, can carry out the foreign matter of substrate surface simultaneously and remove processing.
In addition, the present invention's substrate board treatment on the other hand comprises: substrate holding mechanism, and it keeps the substrate of process object; Second fluid nozzle.Second fluid nozzle has the liquid spraying outlet of housing, ejection treatment fluid and the gas vent of ejection gas, this second fluid nozzle imports treatment fluid and gas in above-mentioned housing, outside above-mentioned housing, to mix (to liquid jet gas) from the treatment fluid of aforesaid liquid ejiction opening ejection with from the gas that the above-mentioned gas ejiction opening sprays, and form the drop of above-mentioned treatment fluid, this drop is supplied on the surface of the substrate that the aforesaid substrate maintaining body is kept.The above-mentioned gas ejiction opening forms the toroidal that surrounds the aforesaid liquid ejiction opening, the external diameter of the gas vent of this toroidal is more than 2 millimeters, below 3.5 millimeters, and the width of the gas vent of this toroidal is (more preferably more than 0.05 millimeter, below 0.15 millimeter) more than 0.05 millimeter, below 0.2 millimeter.
In the external mix type second fluid nozzle that assignee of the present invention proposes before the application's application, it is that 3.5 millimeters, width are 0.3 millimeter that the circular gas vent that surrounds the liquid spraying outlet of central authorities for example forms its external diameter.According to the experimental result to the second fluid nozzle of such formation, to remove the required drop density of performance (for example 50% the rate of removing) be 8 * 10 in order to obtain needed foreign matter
7About, still, because the gas flow of this moment is bigger, so bigger to the damage of the pattern of substrate surface.When reducing gas flow, damage is lowered, and is big but drop becomes, and can not obtain needed drop density.
With respect to this, in the second fluid nozzle that designs gas vent as described above, can be to form the drop of path than the gas input of low discharge, can reach for obtaining the needed required drop density of performance of removing easily (for example is 10
8Individual/minute more than the square millimeter).That is, diminish, thereby also can form the drop of path, and can realize needed drop density even reduce gas flow by making second fluid nozzle self.Thus, when can alleviate the damage to the pattern on the substrate, can remove the foreign matter of substrate surface effectively.
Preferably, above-mentioned second fluid nozzle, when supplying with the drop of above-mentioned treatment fluid to substrate, from the surface of the substrate that the aforesaid substrate maintaining body kept across being configured less than 20 mm distance.According to this structure, by making distance between second fluid nozzle and the substrate surface less than 20 millimeters, thus can the higher drop density that maintains substrate surface.More particularly, can suppress or prevent from second fluid nozzle to arriving that the substrate surface drop contacts with each other and integratedly become bigger drop.In addition, the stream of liquid droplets diffusion can be suppressed or prevent to the while and make cleaning area become big that the result makes the drop density step-down.Thus, owing to make the drop of path arrive the zone of the small size of substrate surface, so can improve drop density at substrate surface.In addition, the distance between so-called second fluid nozzle and the substrate surface is meant from the treatment fluid of liquid spraying outlet ejection with from the mixing point of the gas of gas vent ejection and the distance between the substrate surface.
Preferably, the aforesaid substrate processing unit also comprises controller, the treatment fluid that the control of this controller is supplied with to above-mentioned housing and the flow of gas and the distance between above-mentioned second fluid nozzle and the aforesaid substrate surface (more particularly, from treatment fluid that liquid spraying outlet sprayed with from the distance of the mixing point and the substrate surface of the gas that gas vent sprayed).Preferably, the flow of this controller control and treatment liquid and gas and the distance between second fluid nozzle and the substrate surface are so that the density (drop density) of drop on the aforesaid substrate surface of supplying with from above-mentioned second fluid nozzle is per minute 10
8Individual/square millimeter is above, and (more preferably per minute 1.2 * 10
8Individual/more than the square millimeter.For example, higher limit is 10
9Individual/square millimeter).
By this structure, can will be controlled at per minute 10 in the drop density of substrate surface with the less gas input amount
8Individual/as more than the square millimeter, to realize the less substrate clean of damage to the pattern of substrate surface.
Preferably, above-mentioned controller for example will be put to the flow control of treatment fluid of above-mentioned housing in the scope of 100 milliliters of per minutes, and the flow control that is put to the gas of above-mentioned housing (is preferably 13～17 liters of per minutes 10～20 liters of per minutes.More preferably per minute is about 16 liters) scope in.And then preferably, above-mentioned controller is controlled at 2～15 millimeters (more preferably 3～10 millimeters with the distance between second fluid nozzle and the substrate surface.More preferably 3～7 millimeters) scope in.
Preferably, the volume median diameter of the drop of supplying with from above-mentioned second fluid nozzle is (to be preferably below 20 microns) below 25 microns.
So-called volume median diameter is to use the volume of the liquid that is sprayed to represent the yardstick of the particle diameter of drop.Specifically, whole droplet sizes of being observed adding up to of the volume of the drop bigger than certain particle diameter 50% (therefore, whole droplet sizes that the adding up to of the volume of the drop littler than this particle diameter observed 50%) situation under, this particle diameter is called volume median diameter.
By making volume median diameter in above-mentioned scope, can suppress damage, and can fully improve drop density at substrate surface at the formed pattern of substrate surface, remove performance thereby can obtain good foreign matter.
Preferably, the diameter of the drop of supplying with from above-mentioned second fluid nozzle in the arrival zone of substrate surface (cleaning the zone) is (more preferably more than 6 millimeters, below 13 millimeters more than 5 millimeters, below 15 millimeters.More preferably more than 6 millimeters, below 8 millimeters).The circular area that cleans the zone, be under 5 millimeters the situation at liquid-drop diameter, being 19.6 square millimeters, is under 6 millimeters the situation, to be 28.3 square millimeters at its diameter, be under 8 millimeters the situation at its diameter, being 50.2 square millimeters, is under 13 millimeters the situation, to be 132.7 square millimeters at its diameter, be under 15 millimeters the situation, to be 176.6 square millimeters at its diameter.
According to this structure, the arrival zone of drop is fully diminished, can improve drop density at substrate surface.Thus, can improve foreign matter and remove performance.
Preferably, above-mentioned second fluid nozzle has swirling air stream formation portion, this swirling air stream formation portion be installed in the above-mentioned housing, from gas introduction port to the gas flow path of above-mentioned gas vent, be used to form swirling air stream, this swirling air stream surrounds the treatment fluid stream that is sprayed from above-mentioned treatment fluid ejiction opening along the treatment fluid emission direction.According to this structure, owing to can suppress from the diffusion of the gas of gas vent ejection, thus mixed treating liquid and gas effectively, and can form small drop effectively.Thus, can reduce damage more to substrate.
Substrate processing method using same of the present invention comprises: the step that imports treat liquid to the housing of second fluid nozzle; Import the step of gas to the housing of above-mentioned second fluid nozzle; From the liquid spraying outlet of above-mentioned second fluid nozzle ejection aforesaid liquid,, by aforesaid liquid and above-mentioned gas are mixed, thereby generate the step of the drop of above-mentioned treatment fluid on the other hand from the gas vent ejection above-mentioned gas of above-mentioned second fluid nozzle; The above-mentioned drop that generates is supplied to substrate surface, and making the drop density at substrate surface is per minute 10
8Individual/square millimeter is above, and (more preferably per minute 1.2 * 10
8Individual/more than the square millimeter.For example, higher limit is 10
9Individual/square millimeter) step.According to this method, can reach low damage and foreign matter and remove well behaved clean, can be formed with the clean of the substrate of atomic thin pattern well.
Preferably, the step that imports gas to the housing of above-mentioned second fluid nozzle comprises step from the flow of per minute below 17 liters to above-mentioned housing that supply with above-mentioned gas with.According to this method, the speed in the time of suppressing drop and collide on the substrate can reduce the damage to the pattern of substrate surface.And, because the drop density height is removed performance so can realize sufficient foreign matter.So, can make high foreign matter remove the reduction of ability and damage and deposit, can carry out the foreign matter of substrate surface simultaneously and remove processing.
Above-mentioned or other purposes, feature and effect of the present invention just can become clear with reference to accompanying drawing and the explanation by following execution mode.
In addition, the invention provides a kind of substrate board treatment, it is characterized in that, comprising: substrate holding mechanism, it keeps the substrate of process object; Second fluid nozzle, it has housing, the gas vent of the liquid spraying outlet of ejection treatment fluid and ejection gas, this second fluid nozzle imports treatment fluid and gas in above-mentioned housing, outside above-mentioned housing, to mix the drop that forms above-mentioned treatment fluid from the treatment fluid of aforesaid liquid ejiction opening ejection and the gas that sprays from the above-mentioned gas ejiction opening, this drop is supplied to the surface that is maintained at the substrate on the aforesaid substrate maintaining body, the above-mentioned gas ejiction opening forms the toroidal that surrounds the aforesaid liquid ejiction opening, the external diameter of the gas vent of this toroidal is more than 2 millimeters, 3.5 below the millimeter, the width of the gas vent of this toroidal is more than 0.05 millimeter, 0.2 below the millimeter, this substrate board treatment also comprises controller, this controller control is to the treatment fluid of above-mentioned housing supply and the flow of gas, and the distance between above-mentioned second fluid nozzle and the aforesaid substrate surface, so that the density of drop on the aforesaid substrate surface of supplying with from above-mentioned second fluid nozzle is per minute 10
8Individual/square millimeter is above, per minute 8 * 10
8Individual/below the square millimeter.
In addition, the invention provides a kind of substrate processing method using same, it is characterized in that, comprising: the step that imports treatment fluid to the housing of second fluid nozzle; Import the step of gas to the housing of above-mentioned second fluid nozzle; From the liquid spraying outlet of above-mentioned second fluid nozzle ejection aforesaid liquid,, by aforesaid liquid and above-mentioned gas are mixed, thereby generate the step of the drop of above-mentioned treatment fluid on the other hand from the gas vent ejection above-mentioned gas of above-mentioned second fluid nozzle; The above-mentioned drop that generates is supplied to substrate surface, and making the drop density at this substrate surface is per minute 10
8Individual/more than the square millimeter and at per minute 8 * 10
8Individual/the following step of square millimeter, the above-mentioned gas ejiction opening forms the toroidal that surrounds the aforesaid liquid ejiction opening, the external diameter of the gas vent of this toroidal is more than 2 millimeters, below 3.5 millimeters, and the width of the gas vent of this toroidal is more than 0.05 millimeter, below 0.2 millimeter.
Description of drawings
Fig. 1 is the schematic side-view of structure of the substrate board treatment of expression an embodiment of the present invention.
Fig. 2 A is the Ning section of the structure of expression second fluid nozzle, and Fig. 2 B is its upward view.
Fig. 3 A and Fig. 3 B are respectively the diagram part end view and the upward views of inner core.
Fig. 4 is the diagrammatic perspective view of expression from the direct of travel of the nitrogen of the gas vent ejection of second fluid nozzle.
Fig. 5 is the diagrammatic perspective view of expression from the direct of travel of the nitrogen of the gas vent ejection of second fluid nozzle.
Fig. 6 A and Fig. 6 B represent the relation of the pattern damage number on drop density and the wafer.
Fig. 7 A and Fig. 7 B represent the relation of the pattern damage number of nozzle height in the second fluid nozzle of comparative example and wafer.
Fig. 8 A and Fig. 8 B represent the nozzle height in the second fluid nozzle of first embodiment and second embodiment and the relation of the damage of the pattern on wafer number respectively.
Fig. 9 is the diagrammatic cross-sectional view that is illustrated in the structure of the second fluid nozzle that existing substrate board treatment has.
Embodiment
Fig. 1 is the schematic side-view of structure of the substrate board treatment of expression an embodiment of the present invention.This substrate board treatment 1 is the device that is used to clean the surface of semiconductor wafer (following only be called " the wafer ") W as an example of substrate, has: as the rotary chuck 10 of substrate holding mechanism, its approximate horizontal keeps and the rotation wafer W; Second fluid nozzle 2, it supplies with pure water (deionized water: drop Deionized Water) as cleaning fluid to being maintained at wafer W on the rotary chuck 10.
Be combined with rotary drive mechanism 14 at rotating shaft 11, rotating shaft 11 is rotated around its central shaft.Thus, the wafer W that is maintained on the rotary chuck 10 is rotated.
Pure water as an example of treatment fluid can be supplied to second fluid nozzle 2 from the pure water supply source via treatment fluid pipe arrangement 24.At treatment fluid pipe arrangement 24 but the valve 24V that aperture is adjusted is installed, this valve 24V can carry out the adjusting to the flow of the switching of the stream of the pure water of second fluid nozzle 2 supplies and pure water.
In addition, the nitrogen (example of gas) of high pressure can be supplied to second fluid nozzle 2 from the nitrogen supply source via nitrogen pipe arrangement 25.At nitrogen pipe arrangement 25 but the valve 25V that aperture is adjusted is installed, this valve 25V can carry out the adjusting to the flow of the switching of the stream of the nitrogen of second fluid nozzle 2 supplies and nitrogen.The downstream of valve 25V in nitrogen pipe arrangement 25 (between valve 25V and the second fluid nozzle 2) is equipped with pressure gauge 25P, and this pressure gauge 25P can measure the nitrogen gas pressure that is imported into second fluid nozzle 2.
When second fluid nozzle 2 imported pure water and nitrogen simultaneously, the droplet stream by second fluid nozzle 2 generation pure water sprayed downwards towards the upper surface that is maintained at the wafer W on the rotary chuck 10 when opening valve 24V, 25V simultaneously.
The action of the switching of valve 24V, 25V and rotary drive mechanism 14 and nozzle moving mechanism 23 can be controlled by controller 20.
During clean wafers W surperficial, make the wafer W rotation that is maintained on the rotary chuck 10 by rotary drive mechanism 14, by nozzle moving mechanism 23 second fluid nozzle 2 along continuous straight runs (the radius of turn direction of wafer W) on wafer W is moved, and spray the drop of pure water from second fluid nozzle 2 to the upper surface of wafer W.At this moment, second fluid nozzle 2 will keep from the height on the surface of wafer W under certain state, and the opposed position, center of wafer W and and the opposed position of circumference of wafer W between move horizontally.Thus, can handle the entire upper surface of wafer W equably.
By importing the nitrogen of high pressure, thereby can make the drop of pure water collide the surface of wafer W with big kinetic energy to second fluid nozzle 2.At this moment, remove to the kinetic energy of the drop by pure water and physical property particle attached to the surface of wafer W.
Change the nitrogen gas pressure (flow) that is directed to second fluid nozzle 2 by the aperture that changes valve 25V, thereby can make the change of size of the drop of the pure water that is generated by second fluid nozzle 2, correspondingly, the drop density (arriving the number of drops in unit are zone in each unit interval) on the wafer W surface is changed.Thus, the treatment characteristic of the wafer W that the drop by pure water carries out is changed.
And, by the height on change second fluid nozzle 2 relative wafer W surfaces, and the arrival zone (processing region can change droplet stream arrival wafer W the time.Be the cleaning zone of circular in this embodiment) size (area), this droplet stream is from second fluid nozzle 2 diffusion and is directed to the wafer W surface.Thus, can be adjusted in the drop density on wafer W surface.
Fig. 2 A is the Ning section of the structure of expression second fluid nozzle 2, and Fig. 2 B is the upward view from the seen second fluid nozzle 2 of rotary chuck 10 sides.Second fluid nozzle 2 is nozzles of so-called external mix type, and nitrogen and pure water are collided and the drop of generation treatment fluid.Second fluid nozzle 2 comprises the urceolus 34 that constitutes housing and is embedded in its inner inner core 39, and has roughly columned profile.Inner core 39 and urceolus 34 total central shaft Q are configured coaxial shape.
The inner space of inner core 39 is the treatment fluid stream 40 of linearity.Treatment fluid stream 40, there is opening the end a side of inner core 39 as the treatment fluid introducing port.End a side of this inner core 39 is connected with treatment fluid pipe arrangement 24, imports pure water via treatment fluid introducing port 30 to treatment fluid stream 40 from treatment fluid pipe arrangement 24.Treatment fluid stream 40, there is opening the end (with being connected with treatment fluid pipe arrangement 24 1 side opposition sides) the opposing party of inner core 39 as treatment fluid ejiction opening 41.
By inner core 39, the stream of pure water is restricted to along the linearity of central shaft Q, sprays pure water from treatment fluid ejiction opening 41 in the direction along this straight line (central shaft Q).When handling wafer W, dispose second fluid nozzle 2 perpendicular to the mode on the surface of wafer W with central shaft Q.
Urceolus 34 has roughly certain internal diameter.On the other hand, inner core 39 changes at the each several part external diameter along central shaft Q direction.The pars intermedia 39A of inner core 39 has the external diameter littler than the internal diameter of urceolus 34.
Near a side of inner core 39 and the opposing party's end, to be respectively arranged with flange 39B, the 39C that forms with inner core 39 from the outstanding mode of the outer peripheral face of inner core 39.Flange 39B, 39C have the internal diameter external diameter about equally with urceolus 34.Thus, inner core 39 at the peripheral part of flange 39B, 39C with when the inwall of urceolus 34 closely contacts, between the inwall of the pars intermedia 39A of inner core 39 and urceolus 34, be formed with central shaft Q be the center gap roughly cylindraceous, be cylinder stream 35.
Length direction pars intermedia at urceolus 34 is formed with the gas introduction port 31 that is connected with cylinder stream 35.In the side of urceolus 34, be connected with nitrogen pipe arrangement 25 in the part that is formed with gas introduction port 31.The inner space of nitrogen pipe arrangement 25 and cylinder stream 35 are connected, and can import nitrogen via gas introduction port 31 to cylinder stream 35 from nitrogen pipe arrangement 25.
At the flange 39B of treatment fluid ejiction opening 41 sides that are set at inner core 39, be formed with the airflow direction conversion stream 43 that connects flange 39B along central shaft Q direction.
The end of treatment fluid ejiction opening 41 sides of urceolus 34 is the more little shielding portion 34A with taper internal face of forward end internal diameter more.In central shaft Q direction, be extruded with the short tube 39D of portion from the end of flange 39B.The short tube 39D of portion is configured in the approximate centre of shielding portion 34A.The internal diameter of shielding portion 34A is bigger than the external diameter of the short tube 39D of portion.Thus, between shielding portion 34A and the short tube 39D of portion, be formed with the gap roughly cylindraceous that surrounds central shaft Q, i.e. the stream formation stream 38 that circles round.
Cylinder stream 35, airflow direction conversion stream 43 and the stream that circles round form stream 38 and are interconnected, and form gas flow path 44.The stream that circles round form stream 38 around treatment fluid ejiction opening 41 has opening as the gas vent 36 of ring-type.By this structure, the nitrogen that is imported into cylinder stream 35 via nitrogen pipe arrangement 25 is ejected from gas vent 36.Airflow direction conversion stream 43 be formed on gas vent 36 near.
In the substrate board treatment 1 when clean wafers W, the treatment fluid ejiction opening 41 of second fluid nozzle 2 and gas vent 36 are towards the wafer W side (below) that is maintained on the rotary chuck 10.Treatment fluid ejiction opening 41 and gas vent 36 contiguous formation.More particularly, treatment fluid ejiction opening 41 is opening circularly, and gas vent 36 is to surround treatment fluid ejiction opening 41 circular mode openings.
Fig. 3 A is the diagram part end view of inner core 39, and Fig. 3 B is the diagram upward view of inner core 39.Near Fig. 3 A only represents flange 39B part.
Seeing along the direction of central shaft Q, all relatively aperture position on the periphery of flange connector 39B and central shaft Q be radially for the groove 42 of any one, with roughly the same angle oblique, and form (with reference to Fig. 3 B) in mode along the tangent line of the periphery of the short tube 39D of portion.Therefore, in second fluid nozzle 2, seeing that groove 42 forms in the mode along the tangential direction of gas vent 36 (circle round stream form stream 38) along the direction of central shaft Q.
In second fluid nozzle 2, the outer circumferential side of groove 42 is stopped up by the inwall of urceolus 34, thus, is formed with 6 airflow direction conversion streams 43.In addition, at the short tube 39D of the portion side circumference of flange 39B, the peristome crested 34A of portion of groove 42 covers (with reference to Fig. 2).On the other hand, seeing that the part of the private side of groove 42 is positioned at and gas vent 36 position overlapped along the direction of central shaft Q.
Like this, be formed with the second fluid nozzle 2 of airflow direction conversion stream 43 in inside, only just can obtain to be embedded in the inner core 39 that is formed with groove 42 around at urceolus 34.
When from nitrogen pipe arrangement 25 when cylinder stream 35 imports nitrogen, nitrogen flows to airflow direction conversion stream 43 sides at cylinder stream 35 along its bus, and is imported into airflow direction conversion stream 43.In airflow direction conversion stream 43 in the flowing nitrogen, form stream 38 sides in the outer circumferential side flowing nitrogen of flange 39B at the stream that circles round, flow to the private side (direction of representing flow of nitrogen gas at Fig. 3 B with arrow K) of flange 39B along the inwall of shielding portion 34A.At this moment, the direction of flow of nitrogen gas is transformed to the direction that has along the component of the circumferencial direction of gas flow path 44 (stream that circles round forms stream 38) from the generatrix direction of gas flow path 44.
Form in the stream 38 at the stream that circles round, nitrogen can freely flow along the circumferencial direction of the stream formation stream 38 that circles round.Thus, the nitrogen that is directed to the stream formation stream 38 that circles round from airflow direction conversion stream 43 flows in the mode of rotating in the counterclockwise direction among Fig. 3 B around central shaft Q (treatment fluid stream 40), and is imported into gas vent 36.
By forming 6 airflow direction conversion streams 43, and from the circumference of gas flow path 44 cylindraceous roughly across 6 places that disposed at interval, the air-flow that has changed direction is imported to the stream that circles round forms stream 38 (gas vent 36 sides).Thus, the circumferencial direction (direction of circling round) at the stream formation stream 38 that circles round forms the stream that circles round uniformly.
Fig. 4 is the diagrammatic perspective view of expression from the direct of travel of the nitrogen of gas vent 36 ejections of second fluid nozzle 2.In Fig. 4, represent the direct of travel of nitrogen with arrow N.Form stream 38 at the stream that circles round, nitrogen flows in the mode of circling round around treatment fluid stream 40, and the nitrogen from gas vent 36 ejections forms swirling air stream near gas vent 36 thus.Nitrogen is ejected from gas vent 36 after the stream formation stream 38 that circles round forms the stream that circles round, and therefore, it is even that this swirling air stream becomes in a circumferential direction.The swirling air stream of nitrogen is formed in the mode of surrounding the pure water of ejection from treatment fluid ejiction opening 41 along central shaft Q.
Seeing along the direction of central shaft Q, by forming groove 42, advancing in the direction of the component of tangential direction with gas vent 36 from the nitrogen of gas vent 36 ejections in mode along the tangential direction of gas vent 36.Thus, the stream of liquid droplets that is moved to the pure water on the wafer W from second fluid nozzle 2 and nitrogen together mainly has: restriction L1, its be formed on treatment fluid ejiction opening 41 near; Diffusion part M1, it is just expanded more from the approaching more surface that is maintained at the wafer W on the rotary chuck 10 of restriction L1.
Restriction L1 has such shape (roughly rounding frustum shape): the area of the cross section vertical with the emission direction of pure water (diameter of approximate circular cross-section) is just reducing along the approaching more wafer W that is maintained on the rotary chuck 10 of the each several part of the emission direction of pure water.Diffusion part M1 is connected setting with the end of rotary chuck 10 sides of restriction L1, has such shape (roughly truncated cone shape): the area of the cross section vertical with the emission direction of pure water (diameter of approximate circular cross-section) is along with increasing near rotary chuck 10.Therefore, by restriction L1 and diffusion part M1, and the shape of formation cydariform.
The main direct of travel (central axis direction of swirling air stream) of the drop of the pure water that sprays from second fluid nozzle 2 is with respect to the wafer W approximate vertical.
Fig. 5 is the diagrammatic perspective view of expression from other examples of the direct of travel of the nitrogen of gas vent 36 ejections of second fluid nozzle 2.In Fig. 5, represent the direct of travel of nitrogen with arrow N.The stream of liquid droplets that is moved to the pure water on the wafer W from second fluid nozzle 2 and nitrogen together mainly has: restriction L2, its be formed on treatment fluid ejiction opening 41 near; Diffusion part M2, its from restriction L1 along with expanding near the surface that is maintained at the wafer W on the rotary chuck 10.
In this example, restriction L2 has such shape (substantial cylindrical shape): the area of the cross section vertical with the emission direction of pure water (diameter of approximate circular cross-section) is much the same at the each several part along the emission direction of pure water.Diffusion part M2 is connected setting with the end of rotary chuck 10 sides of restriction L2, has such shape (roughly truncated cone shape): the area of the cross section vertical with the emission direction of pure water (diameter of approximate circular cross-section) is along with increasing near rotary chuck 10.
Like this, the nitrogen that flows to wafer W from gas vent 36 at restriction L1, L2 can not flow in mode to the side diffusion.Thus, owing to closed in narrower zone,, generate the drop that has than the pure water of minor diameter effectively so pure water and nitrogen mix (collision) effectively from the pure water of treatment fluid ejiction opening 41 ejections.
In addition, middle part is by throttling and flowing nitrogen is pushed effectively from behind by the nitrogen from gas vent 36 ejection and flowed, so can just can not arrive wafer W than big retarding like this.The drop of pure water and be handled upside down together from the nitrogen of gas vent 36 ejection advances, so the drop of pure water can just can not arrive wafer W than big retarding yet.
That is, the drop of pure water does not rely on the distance between second fluid nozzle 2 and the wafer W surface, has the kinetic energy corresponding with the flow of the nitrogen that is put to second fluid nozzle 2 and can collide on the wafer W.Thus, give particle kinetic energy, and remove degranulation, so the wafer W surface is cleaned effectively attached to the wafer W surface.
And then, in the second fluid nozzle 2 of present embodiment, because the direction of the drop of the pure water that sprayed is stable, so be maintained at cleaning regional stability in the wafer W on the rotary chuck 10.Therefore, clean wafers W equably.
The following table 1 expression inventor makes the differences such as size of the second fluid nozzle 2 that constitutes like that as described above carry out the result of cleaning experiment.
At " comparative example ", be the external diameter a=3.5mm of gas vent 36, its width c=0.3mm, the diameter b=2.9mm of treatment fluid ejiction opening 41.In addition, at " first embodiment ", be a=2.2mm, b=2.1mm, c=0.05mm.And then, at " second embodiment ", be a=2.5mm, b=2.3mm, c=0.1mm.
Table 1
About comparative example 2, the height of second fluid nozzle 2 from the wafer W surface is set at 3mm, 6mm, 10mm and 20mm respectively, simultaneously regulate nitrogen flow respectively in the mode that can obtain 50% the rate of removing, experimentize.The pure water flow all is 100 milliliters of per minutes under situation arbitrarily.About first embodiment, the height of second fluid nozzle 2 from the wafer W surface is set at 3mm and 10mm respectively, simultaneously regulate nitrogen flow respectively in the mode that can obtain 50% the rate of removing, experimentize.The pure water flow all is 100 milliliters of per minutes under situation arbitrarily.About second embodiment, the height of second fluid nozzle 2 from the wafer W surface is set at 3mm, 6mm, 10mm and 20mm respectively, simultaneously regulate nitrogen flow respectively in the mode that can obtain 50% the rate of removing, experimentize.The pure water flow all is 100 milliliters of per minutes under situation arbitrarily.Like this, under the condition of being removed rate on an equal basis, investigate cleaning area, liquid-drop diameter and drop density on the wafer W and the damage number of the pattern on the wafer W.
Here, so-called " removing rate " is meant from being attached with this atomic ratio that atomic wafer W is removed in advance.Specifically, measure the population N on wafer W surface
0, make particle (Si then
3N
4Particle) on the surface attached to wafer W, and measures the population N on wafer W surface
1, and then, after cleaning, measure the population N on wafer W surface
2The rate of removing of this moment is calculated by following formula.
Remove rate (%)=100 * (N
1-N
2)/(N
1-N
0)
Also have, the what is called " highly " of second fluid nozzle 2 from the wafer W surface is meant from the wafer W surface to second fluid nozzle the height of 2 gas-liquid mixed point.Strictly speaking, the gas-liquid mixed point is in the position of below from about the about 2mm in the lower end of second fluid nozzle 2, but, even regard as identical in fact also less than influence with the lower end position (that is the position of gas vent 36 and treatment fluid ejiction opening 41) of second fluid nozzle 2.Because gas-liquid mixed point must thus, be stipulated the lower limit of " highly " on the surface of wafer W.Set upper limit does not have reason physically.
" nitrogen flow " is by the nozzle arrangements set upper limit.That is, at the nozzle of first and second embodiment, compared to the nozzle of comparative example, the upper limit of flow diminishes.Nitrogen flow is controlled in the mode that can access the desired rate of removing (for example 50%) as described above.
So-called " cleaning area " is (the arrival zone, zone that is arrived the surface of wafer W by the droplet stream that second fluid nozzle 2 generates.The cleaning zone) size.Because this arrives the zone is circular regions, so just can obtain cleaning area by measuring its diameter.The diameter that arrives the zone can directly measure with ruler, also can make the wafer W rotation, and come the zone of the ring-type (band shape) on the clean wafers W by droplet stream from second fluid nozzle 2, the disconnected degree by measuring this annular section with ruler also indirectly instrumentation come out.Cleaning area can be adjusted according to " highly " of second fluid nozzle 2.That is, because high highly more, droplet stream is diffusion more just, so the cleaning area change is big.
So-called " liquid-drop diameter " is the mean particle diameter of drop, here, is volume median diameter (VMD).So-called volume median diameter is to use the volume of the liquid that sprays from second fluid nozzle 2 to represent the yardstick of the particle diameter of drop, in the total of the volume of the drop bigger be than certain particle diameter the whole droplet size observed 50% (therefore, the total of the volume of the drop littler than this particle diameter be the whole droplet size observed 50%) situation under, this particle diameter is called volume median diameter.Volume median diameter can use laser diffraction formula particle diameter measure of spread device etc. to measure.
In the nozzle of comparative example, liquid-drop diameter diminishes along with the increase of nitrogen flow.With respect to this, in the nozzle of first and second embodiment, liquid-drop diameter depends on nitrogen flow hardly.Therefore, the nozzle at first and second embodiment has such advantage: even produce some deviations on nitrogen flow, also can keep liquid-drop diameter.
So-called " drop density " is meant the number of drops that arrives the unit are (being 1 square millimeter here) on wafer W surface here in the unit interval (being 1 minute).This drop density is based on the measurement result of cleaning area and volume median diameter and put into the pure water flow of second fluid nozzle 2, can obtain by calculating.Under the situation of the nozzle that utilizes first and second embodiment, because liquid ground diameter depends on nitrogen flow hardly, so can think that drop density is subjected to the influence of " highly " of nozzle.That is,, drop density is uprised if the height of nozzle reduces.
Experiment uses second wafer that has formed first wafer of first corrosion-resisting pattern on the surface and formed second corrosion-resisting pattern on the surface to carry out.Second corrosion-resisting pattern is compared the first corrosion-resisting pattern fragility.First and second pattern all is to be the line that the interval of 180nm has formed live width 180nm with width.
So-called " damage number " is meant the disappear sum of (damaged) of pattern collapse on the wafer and pattern.About the damage number, will be 100 below at first wafer, be the whether qualified determinating reference of conduct below 1000 at second wafer.
From the explanation of Fig. 4 and Fig. 5 as can be known, the height of second fluid nozzle 2 is high more, and cleaning area is just big more, and is correspondingly, just low more in the drop density on wafer W surface.In addition, being used to reach the needed nitrogen flow of removing rate increases.In the nozzle of second embodiment, for the situation that " highly " of nozzle is made as 20nm, when using above-mentioned whether qualification determination benchmark, the result is underproof result (with reference to table 1).This is to infer: for the height that improves nozzle drop density is diminished and cause foreign matter to remove the effect deficiency, the result who nitrogen flow is increased in order to remedy this effect deficiency is that it is big that damage becomes.Therefore, we can say that the height of preferred nozzle is made as below the 20mm, more preferably is made as below the 10mm.And then we can say that nitrogen flow is that per minute helps reducing damage below 17 milliliters.
In comparative example, even drop at height under the situation of 6mm, also be 33 liters/minute in order to reach 50% the needed nitrogen flow of the rate of removing with second fluid nozzle 2, the liquid-drop diameter of this moment is 33 μ m, drop density is 8.06 * 10
7Individual/minute mm
2At this moment, the damage number of first wafer is 103, and the damage number of second wafer is 1115, and the pattern on wafer w surface is applied with the damage that is not allowed to.
On the other hand, under the situation of utilizing first embodiment and second embodiment, even when the height with second fluid nozzle 2 rises to 10mm, for reaching 50% the needed nitrogen flow of the rate of removing also is about 4～17 liters/minute, the liquid-drop diameter of this moment is respectively 20 μ m, 23 μ m, and drop density is respectively 18.42 * 10
7Individual/minute mm
2, 17.08 * 10
7Individual/minute mm
2That is, owing to can obtain fine droplet diameter about 20 μ m with the less gas flow, so do not need to improve flow.Correspondingly, under the situation of utilizing first embodiment, damaging several second wafers is 631, and under the situation of utilizing second embodiment, damage quantity first wafer is 77, all in allowed band.
Like this, by using the second fluid nozzle of first and second embodiment, thereby nitrogen flow can be suppressed at low discharge, and can the drop of path be supplied to the wafer W surface with high density, its result can reduce the damage to the pattern on wafer W surface.Certainly, also can cut down the use amount of nitrogen.
Fig. 6 A represents the relation of the pattern damage number on the drop density and first wafer, and Fig. 6 B represents the relation of the pattern damage number on the drop density and second wafer.Hence one can see that, is 10 in drop density
8Individual/minute mm
2Under the above situation, the damage number tails off.And then, in drop density less than 10
8Individual/minute mm
2The zone (more particularly, less than 1.2 * 10
8Individual/minute mm
2The zone), the damage number depend on drop density significantly, with respect to this, be 10 in drop density
8Individual/minute mm
2Above zone (especially 1.2 * 10
8Individual/minute mm
2Above zone), found drop density macrolesion number few more tendency just more, but do not found big drop density dependence.In other words, we can say that drop density is 10
8Individual/minute mm
2Above zone (especially 1.2 * 10
8Individual/minute mm
2Above zone), be the smaller zone of drop density dependence of damage number.From shown in Fig. 6 B with reference to straight line L1, L2 as can be known, in drop density less than 1.2 * 10
8Individual/minute mm
2The zone, the drop density dependence of damage number becomes big, is 10 in drop density
8Individual/minute mm
2Above zone, the drop density dependence of damage number diminishes.Therefore, be 1.2 * 10 preferably in drop density
8Individual/minute mm
2Carry out foreign matter under the above condition and remove processing.
Fig. 7 A represents the relation of the pattern damage number of the nozzle height in the above-mentioned comparative example and first wafer, and Fig. 7 B represents the relation of the pattern damage number of the nozzle height in the above-mentioned comparative example and second wafer.And then Fig. 8 A represents the relation of nozzle height among above-mentioned first embodiment and the damage of the pattern on second wafer number, and Fig. 8 B represents the relation of the pattern damage number of the nozzle height among above-mentioned second embodiment and first wafer.Can hold such relation from these figure: when improving nozzle height, cleaning area broadens, and correspondingly, the drop density table is little, its result, and in order to remedy cleansing power when increasing nitrogen flow, the damage number becomes big.
More than, an embodiment of the present invention is illustrated, still, this invention can also be implemented with other modes.For example, in the above-described embodiment, be example with the second fluid nozzle that sprays the structure of nitrogen from gas vent 36 swirl shape ground, still, the gas that sprays from gas vent may not need to form gyrate air-flow.Promptly, even also can use the present invention to the substrate board treatment liquid that has used second fluid nozzle (for example with reference to Fig. 9), wherein, this second fluid nozzle is from the gas of the gas vent ejection structure from the treatment fluid of treatment fluid ejiction opening ejection from radiation direction gas jet relatively.
In addition, can use distilled water etc. to replace deionized water, can use the kind and the suitable treatment fluid of amount of impurity according to purpose by the pure water that the method beyond the ion-exchange obtains.
Being not limited to pure water (cleaning fluid) from the treatment fluid of second fluid nozzle 2 ejection, also can be etching solution for example.At this moment, mix etching solution and nitrogen effectively, generate the drop of the less etching solution of particle diameter by second fluid nozzle 2.Thus, do not bring the just surface of energy etched wafer W of damage to wafer W.
In addition, owing to do not expand propelling significantly, so can make the drop of etching solution collide the surface of wafer W, the surface of etched wafer W effectively with big kinetic energy to the side from the nitrogen of gas vent 36 ejection.
Can dispose second fluid nozzle 2 with the posture of the normal oblique of the central shaft Q of second fluid nozzle 2 and wafer W so that the main direct of travel (central axis direction of swirling air stream) of the drop of the pure water that sprays from second fluid nozzle 2 relatively wafer W tilt.
Embodiments of the present invention at length are illustrated, but these are only for making the clear concrete example that uses of technology contents of the present invention, the present invention should not be defined in these concrete examples and explain that spirit of the present invention and scope are only limited by the claim number.
The application is willing to 2006-17967 number corresponding to the spy who proposed to Japan Patent office on January 26th, 2006 and on October 30th, 2006 was willing to 2006-294470 number to the spy that Japan Patent office proposes, and the whole open of these applications is incorporated into wherein by reference.
Claims (9)
1. a substrate board treatment is characterized in that, comprising:
Substrate holding mechanism, it keeps the substrate of process object;
Second fluid nozzle, it has the liquid spraying outlet of housing, ejection treatment fluid and the gas vent of ejection gas, this second fluid nozzle imports treatment fluid and gas in above-mentioned housing, outside above-mentioned housing, to mix the drop that forms above-mentioned treatment fluid from the treatment fluid of aforesaid liquid ejiction opening ejection and the gas that sprays from the above-mentioned gas ejiction opening, this drop is supplied to the surface that is maintained at the substrate on the aforesaid substrate maintaining body
The above-mentioned gas ejiction opening forms the toroidal that surrounds the aforesaid liquid ejiction opening, and the external diameter of the gas vent of this toroidal is more than 2 millimeters, below 3.5 millimeters, and the width of the gas vent of this toroidal is more than 0.05 millimeter, below 0.2 millimeter,
This substrate board treatment also comprises controller, treatment fluid and the flow of gas and the distance between above-mentioned second fluid nozzle and the aforesaid substrate surface that this controller control is supplied with to above-mentioned housing are so that the density of drop on the aforesaid substrate surface of supplying with from above-mentioned second fluid nozzle is per minute 10
8Individual/square millimeter is above, per minute 8 * 10
8Individual/below the square millimeter.
2. substrate board treatment as claimed in claim 1 is characterized in that, above-mentioned second fluid nozzle, when supplying with the drop of above-mentioned treatment fluid to substrate, from the surface that is maintained at the substrate on the aforesaid substrate maintaining body across being configured less than 20 mm distance.
3. substrate board treatment as claimed in claim 1, it is characterized in that, treatment fluid and the flow of gas and the distance between above-mentioned second fluid nozzle and the aforesaid substrate surface that above-mentioned controller control is supplied with to above-mentioned housing are so that the density of drop on the aforesaid substrate surface of supplying with from above-mentioned second fluid nozzle is per minute 1.2 * 10
8Individual/more than the square millimeter.
4. substrate board treatment as claimed in claim 1 is characterized in that, the volume median diameter of the drop of supplying with from above-mentioned second fluid nozzle is below 25 microns.
5. substrate board treatment as claimed in claim 1 is characterized in that, the diameter of drop in the arrival zone of substrate surface of supplying with from above-mentioned second fluid nozzle is more than 5 millimeters, below 15 millimeters.
6. substrate board treatment as claimed in claim 1, it is characterized in that, above-mentioned second fluid nozzle has swirling air stream formation portion, this swirling air stream formation portion be installed in the above-mentioned housing, from gas introduction port to the gas flow path of above-mentioned gas vent, be used to form swirling air stream, this swirling air stream surrounds the treatment fluid stream of the ejection from above-mentioned treatment fluid ejiction opening along the treatment fluid emission direction.
7. a substrate processing method using same is characterized in that, comprising:
Import the step of treatment fluid to the housing of second fluid nozzle;
Import the step of gas to the housing of above-mentioned second fluid nozzle;
From the liquid spraying outlet of above-mentioned second fluid nozzle ejection aforesaid liquid,, by aforesaid liquid and above-mentioned gas are mixed, thereby generate the step of the drop of above-mentioned treatment fluid on the other hand from the gas vent ejection above-mentioned gas of above-mentioned second fluid nozzle;
The above-mentioned drop that generates is supplied to substrate surface, and making the drop density at this substrate surface is per minute 10
8Individual/more than the square millimeter and at per minute 8 * 10
8It is individual/the following step of square millimeter,
The above-mentioned gas ejiction opening forms the toroidal that surrounds the aforesaid liquid ejiction opening, and the external diameter of the gas vent of this toroidal is more than 2 millimeters, below 3.5 millimeters, and the width of the gas vent of this toroidal is more than 0.05 millimeter, below 0.2 millimeter.
8. substrate processing method using same as claimed in claim 7 is characterized in that, the step that above-mentioned drop is supplied to substrate surface comprises that to make the density of drop on the aforesaid substrate surface of supplying with from second fluid nozzle be per minute 1.2 * 10
8Individual/the above step of square millimeter.
9. substrate processing method using same as claimed in claim 7 is characterized in that, the step that imports gas to the housing of above-mentioned second fluid nozzle comprises step from the flow of per minute below 17 liters to above-mentioned housing that supply with above-mentioned gas with.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006017967 | 2006-01-26 | ||
| JP2006017967 | 2006-01-26 | ||
| JP2006294470 | 2006-10-30 |
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| JP5650896B2 (en) * | 2009-09-03 | 2015-01-07 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
| CN102078866A (en) * | 2009-11-26 | 2011-06-01 | 昆山厚声电子工业有限公司 | Mask cleaning and drying process of film flaky substrate |
| CN102468118B (en) * | 2010-11-12 | 2015-04-22 | 北大方正集团有限公司 | Jig and cleaning machine |
| CN102028357B (en) * | 2010-11-30 | 2012-08-15 | 沈阳芯源微电子设备有限公司 | Brush cleaning device and using method thereof |
| US20140261572A1 (en) | 2013-03-15 | 2014-09-18 | Dainippon Screen Mfg.Co., Ltd. | Substrate treatment apparatus and substrate treatment method |
| CN104607420B (en) * | 2015-01-15 | 2016-08-17 | 山东大学 | Small size KDP plane of crystal magnetic-jet cleaning device and cleaning |
| JP6496186B2 (en) * | 2015-05-26 | 2019-04-03 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
| CN110620031B (en) * | 2018-06-20 | 2022-02-11 | 沈阳芯源微电子设备股份有限公司 | Wafer surface particle cleaning device |
| CN110112084A (en) * | 2019-05-22 | 2019-08-09 | 长江存储科技有限责任公司 | Semicoductor device washing apparatus |
| JP7417191B2 (en) * | 2020-01-30 | 2024-01-18 | セイコーエプソン株式会社 | liquid injection device |
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