CN1538507A - Gas distribution system of semiconductor machine table gas reaction chamber and method - Google Patents
Gas distribution system of semiconductor machine table gas reaction chamber and method Download PDFInfo
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- CN1538507A CN1538507A CNA031219187A CN03121918A CN1538507A CN 1538507 A CN1538507 A CN 1538507A CN A031219187 A CNA031219187 A CN A031219187A CN 03121918 A CN03121918 A CN 03121918A CN 1538507 A CN1538507 A CN 1538507A
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Abstract
The invention is applicable to plasma etch or thin film deposition. The system and method sets up parameters of valve for controlling gas flow to adjust distribution of plasma gas in reaction chamber so as to make evenness of wafer reach optimum. Tube for delivering gas to reaction chamber through splitter is divided into two tubes: one in to gas jet on center area of gas distributor of plate electrode, and the other in to gas jet on perimeter zone of gas distributor. O type ring isolates the gas jet on center area from gas jet on perimeter zone in order to prevent burbling phenomena from happening. Flow control valve adjusts gas flow in two tubes to change state of distributing gas in reaction chamber in order to meet requirement.
Description
Technical field
The invention relates to and adjust the gas delivery system and method that the reative cell plasma gas distributes in a kind of semiconductor technology, particularly a kind ofly carry out in plasma etching or the thin film deposition processes at wafer, can be by the parameter setting of gas flow control valve, at any time adjust the gas delivery system and method for the distribution situation of plasma gas in reative cell, therefore need not change the electric pole plate gas distributor of reative cell, just can under the different process of etching or deposition, make the uniformity of same wafer reach optimum.
Background technology
When integrated circuit (IC) technology is stepped into stage of nanometer, and wafer size is when also strengthening (8 inches change to 12 inches) gradually, and the distribution of plasma gas in reative cell of whether controlling well will have great connection with the qualification rate of product.At present because wafer area becomes big gradually, the single wafer reative cell becomes trend gradually because of possessing multiple advantages, therefore how can in technologies such as plasma etching or thin film deposition, in the single wafer reative cell, provide required plasma (orifice) gas source distribution, just become considerable problem.
Known semiconductor board is when etching of wafer dry type plasma or thin film deposition processes, all the chemical source material by gaseous state produces chemical reaction at crystal column surface, the mechanism that gas delivery system input gas enters single wafer reative cell 100 as shown in Figure 1, gas in the transfer pipeline 102, at first do a preposition dispersion via gas nozzle (gas nozzle) 104, again via electric pole plate gas distributor (showerhead) 106 with the gas dispersion that fed in entire reaction chamber 100.The pore (gashole) 108 of the electric pole plate gas distributor (showerhead) 106 shown in Fig. 2 is an even distribution shape, can evenly be passed in the entire reaction chamber 100 feeding gas, but in plasma etching or film deposition process, because state of arts parameter (input gaseous species, temperature, pressure, etching or deposition height etc.) difference, to make plasma etching or thin film deposition in wafer difference to some extent everywhere, example: may be with fringe region up to the otherness more than 30% in the crystal circle center zone, wherein temperature parameter and pressure parameter can directly carry out precision adjustment at semiconductor board, but want to control the distribution scenario of input gas at reative cell 100, the arrangement design of pore 108 that just can only be by change electric pole plate gas distributor 106 just can reach this demand.Therefore in plasma etching or film deposition process, if want central area and fringe region in same wafer, obtain small etching of difference or deposition results, just must cooperate the distribution of different electric pole plate gas distributor pores according to different states of arts, but so, just must stop the board running, disassemble reative cell, make the mobility of producing board descend, cause production cost also will significantly improve.
Summary of the invention
In the foregoing invention background, the gas cell distribution of tradition on the single electric pole plate gas distributor can't reach in the different process the many shortcomings to same wafer uniformity demand, the invention provides one and adjust the gas delivery system and method that the reative cell plasma gas distributes, so as to guaranteeing the demand of the same wafer technology uniformity.
One object of the present invention is to provide a kind of system that the reative cell plasma gas distributes that adjusts, and it satisfies the demand to the same wafer uniformity in different process.
Another object of the present invention is to provide a kind of method that can monitor and adjust the gas flow of reative cell plasma gas transfer pipeline at any time, makes it meet the gas with various flow value of setting in the different process.
According to above-described purpose, the invention provides a kind of gas delivery system of semiconductor board gas reaction chamber, comprise: one carries gas piping, connects first and second and carries the drop-leg road; First gas flow control valve is positioned at first and carries the drop-leg road, carries the gas flow on drop-leg road in order to control first; Second gas flow control valve is positioned at second and carries the drop-leg road, carries the gas flow on drop-leg road in order to control second; First and second gas nozzles lay respectively at first and second outlets of carrying the drop-leg roads; The gas partitions device is between first and second gas nozzles, in order to separate from the gas of first and second gas nozzles ejection; And electric pole plate gas distributor, have more than first pore and more than second pore, wherein the gas of first gas nozzle ejection is delivered to gas reaction chamber via more than first pore, and the gas of second gas nozzle ejection is delivered to this gas reaction chamber via more than second pore.
According to above-mentioned conception, wherein the gas delivery system more comprises a control system, has: a controller, in order to adjust first and second gas flow control valves; The first and second gas flow detectors lay respectively at first and second and carry the drop-leg road, carry the gas flow on drop-leg road in order to detect first and second, and send the detecting value back to controller.
According to above-mentioned conception, wherein the gas flow detector is a heater coil.
According to above-mentioned conception, wherein gas flow control valve is with manual adjustment.
According to above-mentioned conception, wherein first gas nozzle is positioned at the central area of electric pole plate gas distributor.
According to above-mentioned conception, wherein second gas nozzle is positioned at the peripheral region of electric pole plate gas distributor.
According to above-mentioned conception, wherein the gas partitions device is an O type ring.
According to above-mentioned conception, wherein the material of O type ring is rubber or plastic cement.
According to above-mentioned conception, wherein the material of O type ring is corrosion-resistant material, and for example iron is not imperial.
According to above-mentioned conception, wherein more than first pore of electric pole plate gas distributor is evenly to distribute.
According to above-mentioned conception, wherein more than second pore of electric pole plate gas distributor is evenly to distribute.
Description of drawings
Fig. 1 is the wafer reaction chamber structure figure of known gas delivery system;
Fig. 2 is the gas cell distribution figure of electric pole plate gas distributor;
Fig. 3 is the wafer reaction chamber structure figure that uses gas delivery system of the present invention;
Fig. 4 is the profile that the wafer metal level connects the hole;
Fig. 5 is the gas diverter structural map of gas delivery system first embodiment of the present invention;
Fig. 6 is the circuit framework of known Wheatstone bridge;
Fig. 7 is to use the flow chart of gas delivery system operating procedure of the present invention;
Fig. 8 is the gas diverter structural map of gas delivery system second embodiment of the present invention.
100,200: the single wafer reative cell
102,202,2021,2022,301,302,303: gas transfer pipeline
104,2041,2042: gas nozzle
106,206: the electric pole plate gas distributor
108,208: pore
203: gas diverter
205:O type ring
2071,2072,304,305,304 ', 305 ': gas flow control valve
306,307: the control circuit of gas flow control valve
308,309: detector
402,404: connect the hole
406 408: metal level
Embodiment
Preferred embodiment of the present invention, please refer to the structure chart of plasma gas single wafer reative cell 200 as shown in Figure 3, the gas transfer pipeline 202 and the reative cell 200 that have comprised part, wherein import the transfer pipeline 202 of reative cell gas, earlier through behind the gas diverter (gasseperator) 203, divide into two pipelines 2021 and 2022 again, wherein pipeline 2021 is connected to the gas nozzle 2041 of central area, 2022 of another pipelines are connected to the gas nozzle 2042 of neighboring area, and the gas nozzle 2041 of central area and neighboring area nozzle 2042 are also separated with O type ring (O ring) 205, local flow-disturbing phenomenon takes place with the air-flow of avoiding two zones, by flow control valve 2071,2072 adjust these two intake lines 2021,2022 gas flow, and behind the pore 208 through electric pole plate gas distributor 206, just can change the distribution scenario of gas, to cooperate the demand of different technology conditions at reative cell 200.The material of O type ring 205 can be used cheap rubber or plastic cement, and in acrid plasma gas, then need use corrosion-resistant material in not acrid plasma gas, and for example iron is not imperial.
For example invention, Fig. 4 connects hole (Vial) 402 is connected hole (Vial) 404 with second technology for etching first, though the gas that etching is used all is Cl
2Or BCl
3But because the first metal layer (Metal 1) 406 and second metal level (Metal 2), 408 height is different, when the technological parameter of use etching the first metal layer 406 removes etching second metal level 408, central area and neighboring area in same wafer, can obtain having the etching result of suitable otherness, even have and to exceed the higher limit of allowing specification.Utilize the flow control valve of carrying in the gas delivery system of the present invention on the gas piping 202 this moment, adjust the gas flow that leads to central area gas nozzle 2041 and neighboring area gas nozzle 2042 respectively, then can directly change the distribution scenario of gas at reative cell 200, make the central area and the neighboring area of same wafer, etching result with acceptable fine difference, and needn't stop the board running, change reative cell electric pole plate gas distributor 206, to guarantee the method for the same wafer etching uniformity.
Fig. 5 then is the indoor design figure of the gas diverter (gasSeperator) 203 of gas delivery system first embodiment of the present invention.Comprise gas transfer pipeline 301,302,303, be positioned at the gas flow control valve 304,305 of two intake lines 302,303, and the control circuit 306,307 of control valve.After for example gas is sent into via single transfer pipeline 301, flow into two gas transfer pipelines 302 and 303 more respectively, wherein the gas transfer pipeline 302,303 of each shunting all has the detector 308,309 of detecting gas flow, two detectors 308,309 are fed back to master control system with the data that detect thus, compare with set point again, if detecting value and set point have gap, then can be by the gas flow control valve 304,305 of the direct control gaseous transfer pipeline of master control system, adjusting gas stream flux in the pipeline, and then reach the shunting ratio value of setting.Detector the 308, the 309th constitutes with the coil that heats, its operation principle is when gas flows in pipeline, can take away the heat on the coil, cause the change of coil temperature, and work as gas flow not simultaneously, the temperature of coil is difference to some extent also, and then the resistance value of change coil, the control circuit the 306, the 307th of control valve comprises the circuit framework of known Wheatstone bridge as shown in Figure 6, calculate the size of gas flow by changes in resistance, adjust control valve 304,305 again so that in the pipeline gas stream flux reach set point.
Fig. 7 is for using the flow chart of gas delivery system operating procedure of the present invention, at first set in the gas transfer pipeline gas stream value and allowable deviation than (step 701) according to different process requirements, detector is detected gas flow in the gas transfer pipeline then, and send its detecting value back to control system (step 702), control system is calculated the dynamic deviation ratio of detecting value and set point, itself and allowable deviation ratio are compared (step 703), if dynamic deviation than greater than allowable deviation than and its value for just, then control system is sent gas flow (step 704) in the signalisation control valve minimizing gas transfer pipeline, if dynamic deviation is than being worth for negative greater than allowable deviation ratio and its, then control system is sent a signalisation control valve increases gas flow (step 705) in the gas transfer pipeline, if the dynamic deviation ratio is less than the allowable deviation ratio, gas flow is normal in the expression gas transfer pipeline, and control system will not sent a signal and give control valve and adjust gas flow (step 706) in the gas transfer pipeline.
Please refer to as shown in Figure 8, be the indoor design figure of the gas diverter 203 of gas delivery system second embodiment of the present invention.Comprised gas transfer pipeline 301,302,303, and gas flow control valve 304 ' and 305 '.As first embodiment, after gas is sent into via single transfer pipeline 301, flow into two gas transfer pipelines 302 and 303 more respectively, but control piper 302,303 gas flow control valve 304 ', 305 ' then is manual mode, though this moment can't be with among first embodiment, control circuit 306 by control valve, 307 and the detecting gas flow detector 308,309, at any time monitor and control gaseous transfer pipeline 302 and 303 in gas flow, but can save to build and put control circuit 306,307 and detector 308,309 cost, and still can and disassemble under the situation of reative cell at the hardware structure that need not change reative cell electric pole plate gas distributor, reach the distribution that changes reative cell ionic medium gas, and can keep the technology uniformity of same wafer.
Claims (16)
1. the gas delivery system of a semiconductor board gas reaction chamber is characterized in that, comprises:
One carries gas piping, connects one first and carries drop-leg road and one second to carry the drop-leg road;
One first gas flow control valve is positioned at this first conveying drop-leg road, and it controls the gas flow on this first conveying drop-leg road;
One second gas flow control valve is positioned at this second conveying drop-leg road, and it controls the gas flow on this second conveying drop-leg road;
One first gas nozzle is positioned at the outlet on this first conveying drop-leg road;
One second gas nozzle is positioned at the outlet on this second conveying drop-leg road;
One gas partitions device is between this first gas nozzle and this second gas nozzle, in order to separate from the gas of this first gas nozzle and the ejection of this second gas nozzle; And
One electric pole plate gas distributor, have more than first pore and more than second pore, wherein the gas of this first gas nozzle ejection proceeds to this gas reaction chamber via this more than first pore, and the gas of this second gas nozzle ejection proceeds to this gas reaction chamber via this more than second pore.
2. gas delivery as claimed in claim 1 system is characterized in that, further comprises a control system, has:
One controller is in order to adjust this first gas flow control valve and this second gas flow control valve;
One first gas flow detector is positioned at this first conveying drop-leg road, and it detects the gas flow on this first conveying drop-leg road, and sends the detecting value back to this controller;
One second gas flow detector is positioned at this second conveying drop-leg road, and it detects the gas flow on this second conveying drop-leg road, and sends the detecting value back to this controller.
3. gas delivery as claimed in claim 2 system is characterized in that this first gas flow detector is a heater coil.
4. gas delivery as claimed in claim 2 system is characterized in that this second gas flow detector is a heater coil.
5. gas delivery as claimed in claim 1 system is characterized in that this first gas flow control valve is with manual adjustment.
6. gas delivery as claimed in claim 1 system is characterized in that this second gas flow control valve is with manual adjustment.
7. gas delivery as claimed in claim 1 system is characterized in that, this first gas nozzle is positioned at the top, central area of this electric pole plate gas distributor.
8. gas delivery as claimed in claim 1 system is characterized in that, this second gas nozzle is positioned at the top, peripheral region of this electric pole plate gas distributor.
9. gas delivery as claimed in claim 1 system is characterized in that this gas partitions device is an O type ring.
10. gas delivery as claimed in claim 9 system is characterized in that the material of this O type ring is a rubber.
11. gas delivery as claimed in claim 9 system is characterized in that the material of this O type ring is a plastic cement.
12. gas delivery as claimed in claim 9 system is characterized in that the material of this O type ring is corrosion-resistant material.
13. gas delivery as claimed in claim 12 system is characterized in that, this corrosion-resistant material is a not dragon of iron.
14. gas delivery as claimed in claim 1 system is characterized in that, more than first pore of this of this electric pole plate gas distributor is evenly to distribute.
15. gas delivery as claimed in claim 1 system is characterized in that, more than second pore of this of this electric pole plate gas distributor is evenly to distribute.
16. the gas delivery method of a semiconductor board gas reaction chamber is characterized in that, this method comprises:
Set gas stream value and allowable deviation ratio in first and second gas transfer pipeline;
Detect gas flow in this first gas transfer pipeline, and send its detecting value back to a control system;
Calculate the dynamic deviation ratio of flux detecting value and flow setting value in this first gas transfer pipeline;
Relatively the dynamic deviation of this first gas transfer pipeline compares and the allowable deviation ratio, if dynamic deviation than greater than allowable deviation than and its value for just, then this control system control valve of sending this first gas transfer pipeline of a signalisation reduces gas flow in this first gas transfer pipeline, if dynamic deviation than greater than allowable deviation than and its value for negative, then this control system control valve of sending this first gas transfer pipeline of a signalisation increases gas flow in this first gas transfer pipeline;
Detect gas flow in this second gas transfer pipeline, and send its detecting value back to this control system;
Calculate the dynamic deviation ratio of flux detecting value and flow setting value in this second gas transfer pipeline;
Relatively the dynamic deviation of this second gas transfer pipeline compares and the allowable deviation ratio, if dynamic deviation than greater than allowable deviation than and its value for just, then this control system control valve of sending this second gas transfer pipeline of a signalisation reduces gas flow in this second gas transfer pipeline, if dynamic deviation than greater than allowable deviation than and its value for negative, then this control system control valve of sending this second gas transfer pipeline of a signalisation increases this second gas and is input into gas flow in the pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03121918 CN1278393C (en) | 2003-04-14 | 2003-04-14 | Gas distribution system of semiconductor machine table gas reaction chamber and method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03121918 CN1278393C (en) | 2003-04-14 | 2003-04-14 | Gas distribution system of semiconductor machine table gas reaction chamber and method |
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| Publication Number | Publication Date |
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| CN1538507A true CN1538507A (en) | 2004-10-20 |
| CN1278393C CN1278393C (en) | 2006-10-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03121918 Expired - Lifetime CN1278393C (en) | 2003-04-14 | 2003-04-14 | Gas distribution system of semiconductor machine table gas reaction chamber and method |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2009089794A1 (en) * | 2008-01-14 | 2009-07-23 | Beijing Nmc Co., Ltd. | Plasma processing equipment and gas distribution apparatus thereof |
| CN101872729A (en) * | 2010-05-28 | 2010-10-27 | 日月光封装测试(上海)有限公司 | Routing device, and protective gas automatic switching system and method thereof |
| CN102373439A (en) * | 2010-08-24 | 2012-03-14 | 上海博恩世通光电股份有限公司 | Chemical deposition reactor and spraying device thereof |
| CN101137266B (en) * | 2006-08-28 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection apparatus |
| CN102668032A (en) * | 2009-11-20 | 2012-09-12 | 京瓷株式会社 | Deposited film forming device |
| CN101922611B (en) * | 2009-06-16 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | Gas delivery device and dry etching device |
| CN101589172B (en) * | 2005-04-01 | 2013-10-23 | 拉姆研究公司 | High strip rate downstream chamber |
| CN103397309A (en) * | 2013-08-02 | 2013-11-20 | 光垒光电科技（上海）有限公司 | Air-inlet device and reaction chamber |
| CN105424876A (en) * | 2015-11-04 | 2016-03-23 | 中国直升机设计研究所 | Calibrating device for fire extinguishing agent concentration measuring system |
| CN104658846B (en) * | 2013-11-15 | 2017-04-12 | Psk有限公司 | Substrate Treating Apparatus and Method |
| CN109768010A (en) * | 2019-01-22 | 2019-05-17 | 上海华虹宏力半导体制造有限公司 | Improve the method for semiconductor devices yield |
| CN112342528A (en) * | 2019-08-06 | 2021-02-09 | 台湾积体电路制造股份有限公司 | Semiconductor processing machine and method of using the same |
| WO2021208635A1 (en) * | 2020-04-14 | 2021-10-21 | 长鑫存储技术有限公司 | Machine gas path flow adjustment system and method |
| CN115354313A (en) * | 2022-08-16 | 2022-11-18 | 拓荆科技(上海)有限公司 | Control method, device and equipment for semiconductor process gas flow limiting assembly |
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2003
- 2003-04-14 CN CN 03121918 patent/CN1278393C/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101589172B (en) * | 2005-04-01 | 2013-10-23 | 拉姆研究公司 | High strip rate downstream chamber |
| CN101137266B (en) * | 2006-08-28 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection apparatus |
| US9540732B2 (en) | 2008-01-14 | 2017-01-10 | Beijing Nmc Co., Ltd. | Plasma processing equipment and gas distribution apparatus thereof |
| US8888949B2 (en) | 2008-01-14 | 2014-11-18 | Beijing Nmc Co., Ltd. | Plasma processing equipment and gas distribution apparatus thereof |
| WO2009089794A1 (en) * | 2008-01-14 | 2009-07-23 | Beijing Nmc Co., Ltd. | Plasma processing equipment and gas distribution apparatus thereof |
| CN101922611B (en) * | 2009-06-16 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | Gas delivery device and dry etching device |
| CN102668032A (en) * | 2009-11-20 | 2012-09-12 | 京瓷株式会社 | Deposited film forming device |
| CN101872729A (en) * | 2010-05-28 | 2010-10-27 | 日月光封装测试(上海)有限公司 | Routing device, and protective gas automatic switching system and method thereof |
| CN101872729B (en) * | 2010-05-28 | 2012-02-29 | 日月光封装测试(上海)有限公司 | Routing device, and protective gas automatic switching system and method thereof |
| CN102373439B (en) * | 2010-08-24 | 2014-02-05 | 上海博恩世通光电股份有限公司 | Chemical deposition reactor and spraying device thereof |
| CN102373439A (en) * | 2010-08-24 | 2012-03-14 | 上海博恩世通光电股份有限公司 | Chemical deposition reactor and spraying device thereof |
| CN103397309A (en) * | 2013-08-02 | 2013-11-20 | 光垒光电科技（上海）有限公司 | Air-inlet device and reaction chamber |
| CN104658846B (en) * | 2013-11-15 | 2017-04-12 | Psk有限公司 | Substrate Treating Apparatus and Method |
| CN105424876A (en) * | 2015-11-04 | 2016-03-23 | 中国直升机设计研究所 | Calibrating device for fire extinguishing agent concentration measuring system |
| CN109768010A (en) * | 2019-01-22 | 2019-05-17 | 上海华虹宏力半导体制造有限公司 | Improve the method for semiconductor devices yield |
| CN109768010B (en) * | 2019-01-22 | 2021-01-29 | 上海华虹宏力半导体制造有限公司 | Method for improving yield of semiconductor device |
| CN112342528A (en) * | 2019-08-06 | 2021-02-09 | 台湾积体电路制造股份有限公司 | Semiconductor processing machine and method of using the same |
| CN112342528B (en) * | 2019-08-06 | 2023-02-17 | 台湾积体电路制造股份有限公司 | Semiconductor processing machine and method of using the same |
| WO2021208635A1 (en) * | 2020-04-14 | 2021-10-21 | 长鑫存储技术有限公司 | Machine gas path flow adjustment system and method |
| CN115354313A (en) * | 2022-08-16 | 2022-11-18 | 拓荆科技(上海)有限公司 | Control method, device and equipment for semiconductor process gas flow limiting assembly |
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