CN108231620B - Gas flow control device and gas flow control method thereof - Google Patents
Gas flow control device and gas flow control method thereof Download PDFInfo
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- CN108231620B CN108231620B CN201611161477.3A CN201611161477A CN108231620B CN 108231620 B CN108231620 B CN 108231620B CN 201611161477 A CN201611161477 A CN 201611161477A CN 108231620 B CN108231620 B CN 108231620B
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Abstract
A gas flow control device and a gas flow control method thereof are provided, the gas flow control device comprises a gas spray header which is divided into a circular gas inlet area and at least one concentrically arranged circular gas inlet area, each circular gas inlet area comprises a plurality of sector areas, the circular gas inlet area and each sector area are provided with gas supply channels, a plurality of gas through holes are arranged on the circular gas inlet area and each sector area, each gas supply channel is connected with a gas pipeline, each gas pipeline is connected to a gas source through a flow controller, each gas pipeline is provided with an electronic switch valve, and the gas flow on the circular gas inlet area is controlled by controlling the electronic switch valves on all the gas pipelines on the circular gas inlet area to be opened or closed in turn. The invention controls the gas flow by controlling the opening or closing time of the gas pipeline, can control the gas quantity more accurately, thereby effectively compensating the uneven etching, and replaces a flow controller with a simpler switch valve, thereby greatly saving the cost.
Description
Technical Field
The invention relates to the field of semiconductor etching, in particular to a gas flow control device for etching equipment and a gas flow control method thereof.
Background
In semiconductor etching equipment, gas is introduced into a reaction cavity through a gas spray header, plasma is formed through ionization to etch a wafer, in order to guarantee etching uniformity, the gas spray header is generally divided into a plurality of concentric rings, gas is respectively introduced into each annular gas inlet area, and the flow of the gas introduced into each annular gas inlet area is controlled by a flow controller (MFC). This way, the uniformity control of the gas amount in the radial direction is realized, but for the same annular gas inlet area, different flow rates of the reaction gas are needed to be supplied among different areas on the circumference of 360 degrees so as to compensate the etching nonuniformity caused by other reasons, and the accurate control of the gas flow ratio among different fan-shaped areas in the same annular ring is difficult to realize. If the flow limiting valve (Orifice) with fixed parameters is utilized, effective dynamic regulation and control cannot be carried out, in addition, if the gas flow control of different areas is completely realized through a plurality of independent MFCs, aiming at the condition of small gas flow, the MFCs are difficult to ensure high precision, and a plurality of MFCs which are mutually connected in parallel can interfere with each other, so that the pressure stability of the gas in each gas pipeline is difficult to maintain, finally, the gas flow is difficult to accurately control, the etching is uneven, and in addition, the cost is greatly increased by using the MFCs in a large scale.
Disclosure of Invention
The invention provides a gas flow control device and a gas flow control method thereof, wherein the gas flow is controlled by controlling the opening or closing time of a gas pipeline, the gas flow can be controlled more accurately, so that the uneven etching is effectively compensated, and a flow controller is replaced by a simpler switch valve, so that the cost is greatly saved.
In order to achieve the above object, the present invention provides a gas flow control device provided in a semiconductor etching apparatus, the gas flow control device comprising:
the gas spray head is arranged in a reaction cavity of the semiconductor etching equipment and is positioned above the wafer, the gas spray head comprises a circular gas inlet area and at least one annular gas inlet area which is concentrically arranged, the circular gas inlet area and the annular gas inlet area are mutually isolated, the lower surfaces of the circular gas inlet area and the annular gas inlet area comprise a plurality of gas through holes for introducing reaction gas, each annular gas inlet area comprises a plurality of fan-shaped areas, different fan-shaped areas are mutually isolated, and each fan-shaped area is provided with a gas supply channel;
the gas pipelines are respectively connected with a plurality of gas supply channels corresponding to a plurality of fan-shaped areas on the gas spray header;
the electronic switch valves are respectively arranged on each gas pipeline, and each electronic switch valve is connected with the controller and used for controlling the on-off of the gas pipeline;
a flow controller including an output connected to all of the gas lines in the annular gas intake zone for controlling the total gas supplied to the annular gas intake zone;
the gas source is connected with the flow controller through a pipeline and is used for providing reaction gas;
the controller controls the electronic switch valves to be alternately switched on and off, so that the flow proportion of the reaction gas flowing into different fan-shaped areas is in direct proportion to the opening time of the electronic switch valve corresponding to each fan-shaped area.
The number of annular air inlet areas on the gas spray header is more than or equal to 2, the number of fan-shaped areas on each annular air inlet area is more than or equal to 2, the number of gas through holes on the circular air inlet area and each fan-shaped area is more than or equal to 2, and the positions of the gas through holes are uniformly distributed.
The present invention also provides a gas flow control device disposed on a semiconductor etching apparatus, the gas flow control device comprising:
the gas spray head is arranged in a reaction cavity of the semiconductor etching equipment and is positioned above the wafer, the gas spray head comprises a circular gas inlet area and at least one annular gas inlet area which is concentrically arranged, the circular gas inlet area and the annular gas inlet area are mutually isolated, the lower surfaces of the circular gas inlet area and the annular gas inlet area comprise a plurality of gas through holes for introducing reaction gas, each annular gas inlet area comprises a plurality of fan-shaped areas, different fan-shaped areas are mutually isolated, and each fan-shaped area of the circular gas inlet area is provided with a circular gas inlet area fan-shaped area of a gas supply channel;
the gas pipelines are respectively connected with a plurality of gas supply channels corresponding to a plurality of fan-shaped areas on the gas spray header;
the electronic switch valves are respectively arranged on each gas pipeline, and each electronic switch valve is connected with the controller and used for controlling the on-off of the gas pipeline;
the flow restrictors are respectively arranged on each gas pipeline and used for ensuring the flow stability of the gas pipelines;
a flow controller including an output connected to all of the gas lines in the annular gas intake zone for controlling the total gas supplied to the annular gas intake zone;
the gas source is connected with the flow controller through a pipeline and is used for providing reaction gas;
the controller controls the electronic switch valves to be alternately switched on and off, so that the flow proportion of the reaction gas flowing into different fan-shaped areas is in direct proportion to the opening time of the electronic switch valve corresponding to each fan-shaped area.
The number of annular air inlet areas on the gas spray header is more than or equal to 2, the number of fan-shaped areas on each annular air inlet area is more than or equal to 2, the number of gas through holes on the circular air inlet area and each fan-shaped area is more than or equal to 2, and the positions of the gas through holes are uniformly distributed.
The invention also provides a gas flow control method, which realizes the gas flow control of each annular gas inlet area by using the gas flow control device, the flow controller connected with the annular gas inlet area controls the total gas quantity Q provided for the annular gas inlet area, the controller controls the electronic switch valves on all gas pipelines on the annular gas inlet area to be opened in turn, and only one electronic switch valve is allowed to be opened at the same time.
The invention also provides a gas flow control method, which realizes the gas flow control of each annular gas inlet area by using the gas flow control device, the flow controller connected with the annular gas inlet area controls the total gas quantity Q provided for the annular gas inlet area, the controller controls the electronic switch valves on all gas pipelines on the annular gas inlet area to be closed in turn, and only one electronic switch valve is allowed to be closed at the same time.
The present invention also provides a semiconductor etching apparatus, comprising:
a reaction chamber;
the gas spray head is arranged in a reaction cavity of the semiconductor etching equipment and is positioned above the wafer, the gas spray head comprises a circular gas inlet area and at least one annular gas inlet area which is concentrically arranged, the circular gas inlet area and the annular gas inlet area are mutually isolated, the lower surfaces of the circular gas inlet area and the annular gas inlet area comprise a plurality of gas through holes for introducing reaction gas, each annular gas inlet area comprises a plurality of fan-shaped areas, different fan-shaped areas are mutually isolated, and each fan-shaped area of the circular gas inlet area is provided with a circular gas inlet area fan-shaped area of a gas supply channel;
the gas pipelines are respectively connected with a plurality of gas supply channels corresponding to a plurality of fan-shaped areas on the gas spray header;
the electronic switch valves are respectively arranged on each gas pipeline, and each electronic switch valve is connected with the controller and used for controlling the on-off of the gas pipeline;
a flow controller including an output connected to all of the gas lines in the annular gas intake zone for controlling the total gas supplied to the annular gas intake zone;
and the gas source is connected with the flow controller through a pipeline and is used for providing reaction gas.
The number of annular air inlet areas on the gas spray header is more than or equal to 2, the number of fan-shaped areas on each annular air inlet area is more than or equal to 2, the number of gas through holes on the circular air inlet area and each fan-shaped area is more than or equal to 2, and the positions of the gas through holes are uniformly distributed.
The present invention also provides a semiconductor etching apparatus, comprising:
a reaction chamber;
the gas spray head is arranged in a reaction cavity of the semiconductor etching equipment and is positioned above the wafer, the gas spray head comprises a circular gas inlet area and at least one annular gas inlet area which is concentrically arranged, the circular gas inlet area and the annular gas inlet area are mutually isolated, the lower surfaces of the circular gas inlet area and the annular gas inlet area comprise a plurality of gas through holes for introducing reaction gas, each annular gas inlet area comprises a plurality of fan-shaped areas, different fan-shaped areas are mutually isolated, and each fan-shaped area of the circular gas inlet area is provided with a circular gas inlet area fan-shaped area of a gas supply channel;
the gas pipelines are respectively connected with a plurality of gas supply channels corresponding to a plurality of fan-shaped areas on the gas spray header;
the electronic switch valves are respectively arranged on each gas pipeline, and each electronic switch valve is connected with the controller and used for controlling the on-off of the gas pipeline;
the flow restrictors are respectively arranged on each gas pipeline and used for ensuring the flow stability of the gas pipelines;
a flow controller including an output connected to all of the gas lines in the annular gas intake zone for controlling the total gas supplied to the annular gas intake zone;
and the gas source is connected with the flow controller through a pipeline and is used for providing reaction gas.
The number of annular air inlet areas on the gas spray header is more than or equal to 2, the number of fan-shaped areas on each annular air inlet area is more than or equal to 2, the number of gas through holes on the circular air inlet area and each fan-shaped area is more than or equal to 2, and the positions of the gas through holes are uniformly distributed.
The invention controls the gas flow by controlling the opening or closing time of the gas pipeline, can control the gas quantity more accurately, thereby effectively compensating the uneven etching, and replaces a flow controller with a simpler switch valve, thereby greatly saving the cost.
Drawings
Fig. 1 is a schematic structural diagram of a gas flow control device provided by the present invention.
FIG. 2 is a top view of a gas flow control device in an embodiment of the present invention.
Detailed Description
The preferred embodiment of the present invention will be described in detail below with reference to fig. 1 and 2.
The invention provides a gas flow control device which is arranged on a semiconductor etching device and used for realizing flow distribution of reaction gas.
As shown in fig. 1, the gas flow control apparatus includes:
the gas shower head 3 is arranged in the reaction cavity 1 of the semiconductor etching equipment and is positioned above the wafer 2, the gas shower head 3 comprises a circular gas inlet area and at least one annular gas inlet area which is concentrically arranged, the circular gas inlet area and the annular gas inlet area are mutually isolated, the lower surfaces of the circular gas inlet area and the annular gas inlet area comprise a plurality of gas through holes 4 for introducing reaction gas, each annular gas inlet area comprises a plurality of fan-shaped areas, different fan-shaped areas are mutually isolated, and the circular gas inlet area and each fan-shaped area are provided with a gas supply channel;
a plurality of gas pipes 5 respectively connected to a plurality of gas supply channels corresponding to a plurality of sector areas on the gas shower head 3;
a plurality of electronic switch valves 6 respectively arranged on each gas pipeline 5, wherein each electronic switch valve 6 is connected with a controller (not shown in the figure) and is used for controlling the on-off of the gas pipeline 5;
each annular gas inlet area is correspondingly provided with one flow controller 7, the flow controllers 7 are connected with all gas pipelines 5 on the same annular gas inlet area and are used for controlling the total gas quantity provided for the annular gas inlet area, and the circular gas inlet area can also be correspondingly provided with one flow controller 7, and the flow controllers 7 are connected with the gas pipelines 5 on the circular gas inlet area and are used for controlling the total gas quantity provided for the circular gas inlet area;
and a gas source 8 which is connected with all the flow controllers 7 through pipelines and is used for supplying reaction gas.
The number of the annular air inlet areas on the gas spray header 3 is more than or equal to 2, the number of the fan-shaped areas on each annular air inlet area is more than or equal to 2, the number of the gas through holes 4 on the circular air inlet area and each fan-shaped area is more than or equal to 2, and the positions of the gas through holes 4 are uniformly distributed.
All gas pipelines on each annular gas inlet area, electronic switch valves on the gas pipelines and flow controllers connected with the gas pipelines jointly complete gas flow control on the annular gas inlet area.
The controller controls the electronic switch valves 6 to be alternately switched on and off, so that the flow rate of the reaction gas flowing into different fan-shaped areas is in direct proportion to the opening time of the electronic switch valve 6 corresponding to each fan-shaped area.
The flow controller 7 connected to the annular intake area controls the total amount of air Q supplied to the annular intake area,the controller controls the electronic switch valves 6 on all the gas pipelines on the annular gas inlet area to be opened in turn, and only one electronic switch valve is allowed to be opened at the same time. Supposing that n fan-shaped regions are contained in one annular gas inlet region, n gas pipelines are provided, correspondingly, n electronic switch valves are provided, when the electronic switch valves are opened in turn, the total gas supply time of an etching process is assumed to be T, the single gas supply cycle time of the annular gas inlet region is T, the cycle number m is T/T, and in each gas supply cycle time, the opening time of each electronic switch valve of the annular gas inlet region satisfies the following conditions: t is t1+t2+t3+……+tnT, wherein t1Is the opening time, t, of the first electronic switch valve2Is the opening time, t, of the second electronic switch valvenIs the opening time of the nth electronic switch valve.
As shown in fig. 2, in one embodiment of the present invention, the gas shower head 3 includes a circular gas inlet area 301, a first annular gas inlet area and a second annular gas inlet area 303, the circular gas inlet area 301, the first annular gas inlet area and the second annular gas inlet area 303 are all uniformly provided with a plurality of gas through holes 4, the first annular gas inlet area is divided into four areas, namely a first sector area 3021, a second sector area 3022, a third sector area 3023 and a fourth sector area 3024, the first gas pipe 501 is connected with the gas supply channel on the first sector area 3021, the second gas pipe 502 is connected with the gas supply channel on the second sector area 3022, the third gas pipe 503 is connected with the gas supply channel on the third sector area 3023, the fourth gas pipe 504 is connected with the gas supply channel on the fourth sector area 3024, the first gas pipe 501, the second gas pipe 502, the third gas pipe 503 and the fourth gas pipe 504 are all connected with a first flow controller 701, a first electronic switch valve 601 is arranged on the first gas pipeline 501, a second electronic switch valve 602 is arranged on the second gas pipeline 502, a third electronic switch valve 603 is arranged on the third gas pipeline 503, a fourth electronic switch valve 604 is arranged on the fourth gas pipeline 504, and the first electronic switch valve 601, the second electronic switch valve 602, the third electronic switch valve 603 and the fourth electronic switch valve604 are connected to a controller (not shown). Assuming that the total gas supply time of the etching process is 100s, the single gas supply cycle time is set to 2s, the gas supply rates of the four sector areas are set to 10%, 25%, 30% and 35% in sequence, and accordingly, the opening time t of the first electronic switch valve 601 is set to be1Set to 200ms, the opening time t of the second electronic switching valve 602 is set2Set to 500ms, the opening time t of the third electronic switching valve 603 is set3Set to 600ms, the opening time t of the fourth electronic switching valve 6044Setting the time to 700ms, when the first air supply cycle is carried out, firstly opening the first electronic switch valve 601, closing the first electronic switch valve 601 after 200ms, opening the second electronic switch valve 602, closing the second electronic switch valve 602 after 500ms, opening the third electronic switch valve 603, closing the third electronic switch valve 603 after 600ms, opening the fourth electronic switch valve 604 after 700ms, closing the fourth electronic switch valve 604, carrying out the second air supply cycle, opening the first electronic switch valve 601 again, and carrying out 50 cycles in total to complete the air flow control of the annular air inlet area. To prevent a longer period of no air supply over the sector areas, the single air supply cycle time may be set smaller, increasing the number of air supply cycles to reduce the time interval between air supply stops per sector area. The gas supply time of the gas pipeline on each sector area can be set according to the actual etching condition, if the etching rate is low, the gas supply time of the sector area can be correspondingly increased, and if the etching rate is high, the gas supply time of the sector area can be correspondingly reduced.
In another embodiment, the controller can control the electronic switch valves 6 on all the gas pipelines on the annular gas inlet area to be closed alternately, and only one electronic switch valve is allowed to be closed at the same time. Assuming that the total gas quantity Q of the annular gas inlet area comprises n fan-shaped areas, n gas pipelines and correspondingly n electronic switch valves are provided, when the electronic switch valves are closed in turn, assuming that the total gas supply time of the etching process is T and the single gas supply cycle time of the annular gas inlet area is T, the cycle time m is T/T, and each annular gas inlet area comprises n fan-shaped areas, wherein the cycle time m is T/TAnd in the secondary air supply cycle time, the closing time of each electronic switch valve of the annular air inlet area meets the following conditions: t is tOff 1+tOff 2+tOff 3+……+tOff nT, wherein tOff 1Is the closing time, t, of the first electronic switch valveOff 2Is the closing time, t, of the second electronic switch valveOff nThe closing time of the nth electronic switch valve is set, and in the same time, the total gas quantity on the gas pipeline where all the electronic switch valves in the opening state on the annular gas inlet area are located is equal to the total gas quantity Q of the annular gas inlet area.
The gas supply stopping time of the gas pipeline on each sector area can be set according to the actual etching condition, if the etching rate is low, the gas supply stopping time of the sector area can be correspondingly reduced, and if the etching rate is high, the gas supply stopping time of the sector area can be correspondingly increased. In this control mode, in order to ensure stable gas flow in the plurality of gas lines supplied simultaneously, as shown in fig. 1, a flow restrictor 9 is provided in each gas line to ensure stable flow in the gas lines and to prevent gas backflow.
The present invention also provides a semiconductor etching apparatus, comprising:
a reaction chamber 1;
the gas shower head 3 is arranged in the reaction cavity 1 of the semiconductor etching equipment and is positioned above the wafer 2, the gas shower head 3 comprises a circular gas inlet area and at least one annular gas inlet area which is concentrically arranged, the circular gas inlet area and the annular gas inlet area are mutually isolated, the lower surfaces of the circular gas inlet area and the annular gas inlet area comprise a plurality of gas through holes 4 for introducing reaction gas, each annular gas inlet area comprises a plurality of fan-shaped areas, different fan-shaped areas are mutually isolated, and each fan-shaped area of the circular gas inlet area is provided with a circular gas inlet area fan-shaped area of a gas supply channel;
a plurality of gas pipes 5 respectively connected to a plurality of gas supply channels corresponding to a plurality of sector areas on the gas shower head 3;
a plurality of electronic switch valves 6 respectively arranged on each gas pipeline 5, wherein each electronic switch valve 6 is connected with a controller and is used for controlling the on-off of the gas pipeline 5;
a plurality of flow controllers 7, wherein each flow controller 7 is connected with all the gas pipelines 5 on the same annular gas inlet area and is used for controlling the total gas quantity supplied to the annular gas inlet area;
and a gas source 8 which is connected with all the flow controllers 7 through pipelines and is used for supplying reaction gas.
In one embodiment, a flow restrictor 9 may be disposed in each gas line 5 to ensure a stable flow rate in the gas line and to prevent gas backflow.
The invention controls the gas flow by controlling the opening or closing time of the gas pipeline, can control the gas quantity more accurately, thereby effectively compensating the uneven etching, and replaces a flow controller with a simpler switch valve, thereby greatly saving the cost.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (10)
1. A gas flow control device provided on a semiconductor etching apparatus, said gas flow control device comprising:
the gas shower head (3) is arranged in a reaction cavity (1) of the semiconductor etching equipment and is positioned above the wafer (2), the gas shower head (3) comprises a circular gas inlet area and at least one concentrically arranged annular gas inlet area, the circular gas inlet area and the annular gas inlet area are isolated from each other, the lower surfaces of the circular gas inlet area and the annular gas inlet area comprise a plurality of gas through holes (4) for introducing reaction gas, each annular gas inlet area comprises a plurality of fan-shaped areas, different fan-shaped areas are isolated from each other, and each fan-shaped area is provided with a gas supply channel;
a plurality of gas pipelines (5) which are respectively connected with a plurality of gas supply channels corresponding to a plurality of fan-shaped areas on the gas spray header (3);
the electronic switch valves (6) are respectively arranged on each gas pipeline (5), and each electronic switch valve (6) is connected with the controller and used for controlling the on-off of the gas pipeline (5);
a flow controller (7) comprising a gas line (5) having an output connected to the annular gas inlet region for controlling the total gas flow supplied to the annular gas inlet region;
a gas source (8) which is connected with the flow controller (7) through a pipeline and is used for providing reaction gas;
the controller controls the electronic switch valves (6) to be alternately switched on and off, so that the flow proportion of the reaction gas flowing into different fan-shaped areas is in direct proportion to the opening time of the electronic switch valve (6) corresponding to each fan-shaped area.
2. A gas flow control device according to claim 1, wherein the number of the annular gas inlet regions on the gas shower head (3) is 2 or more, the number of the sector regions on each annular gas inlet region is 2 or more, the number of the gas through holes (4) on the circular gas inlet region and each sector region is 2 or more, and the positions of the gas through holes (4) are uniformly distributed.
3. A gas flow control device provided on a semiconductor etching apparatus, said gas flow control device comprising:
the gas shower head (3) is arranged in a reaction cavity (1) of the semiconductor etching equipment and is positioned above the wafer (2), the gas shower head (3) comprises a circular gas inlet area and at least one concentrically arranged annular gas inlet area, the circular gas inlet area and the annular gas inlet area are isolated from each other, the lower surfaces of the circular gas inlet area and the annular gas inlet area comprise a plurality of gas through holes (4) for introducing reaction gas, each annular gas inlet area comprises a plurality of fan-shaped areas, different fan-shaped areas are isolated from each other, and each fan-shaped area is provided with a gas supply channel;
a plurality of gas pipelines (5) which are respectively connected with a plurality of gas supply channels corresponding to a plurality of fan-shaped areas on the gas spray header (3);
the electronic switch valves (6) are respectively arranged on each gas pipeline (5), and each electronic switch valve (6) is connected with the controller and used for controlling the on-off of the gas pipeline (5);
a plurality of flow restrictors (9) which are respectively arranged on each gas pipeline (5) and are used for ensuring the flow on the gas pipelines to be stable;
a flow controller (7) comprising a gas line (5) having an output connected to the annular gas inlet region for controlling the total gas flow supplied to the annular gas inlet region;
a gas source (8) which is connected with the flow controller (7) through a pipeline and is used for providing reaction gas;
the controller controls the electronic switch valves (6) to be alternately switched on and off, so that the flow proportion of the reaction gas flowing into different fan-shaped areas is in direct proportion to the opening time of the electronic switch valve (6) corresponding to each fan-shaped area.
4. A gas flow control device according to claim 3, wherein the number of the annular gas inlet regions on the gas shower head (3) is 2 or more, the number of the sector regions on each annular gas inlet region is 2 or more, the number of the gas through holes (4) on the circular gas inlet region and each sector region is 2 or more, and the positions of the gas through holes (4) are uniformly distributed.
5. A gas flow control method, characterized in that the gas flow control device according to claim 1 or 2 is used for realizing the gas flow control of each annular gas inlet area, a flow controller (7) connected with the annular gas inlet area controls the total gas quantity Q supplied to the annular gas inlet area, and the controller controls the electronic switch valves (6) on all gas pipelines on the annular gas inlet area to be opened alternately, and only one electronic switch valve is allowed to be opened at the same time.
6. A gas flow control method is characterized in that the gas flow control of each annular gas inlet area is realized by using the gas flow control device as claimed in any one of claims 1 to 4, a flow controller (7) connected with the annular gas inlet area controls the total gas quantity Q supplied to the annular gas inlet area, the controller controls electronic switch valves (6) on all gas pipelines on the annular gas inlet area to be closed alternately, and only one electronic switch valve is allowed to be closed at the same time.
7. A semiconductor etching apparatus, comprising:
a reaction chamber (1);
the gas shower head (3) is arranged in a reaction cavity (1) of the semiconductor etching equipment and is positioned above the wafer (2), the gas shower head (3) comprises a circular gas inlet area and at least one concentrically arranged annular gas inlet area, the circular gas inlet area and the annular gas inlet area are isolated from each other, the lower surfaces of the circular gas inlet area and the annular gas inlet area comprise a plurality of gas through holes (4) for introducing reaction gas, each annular gas inlet area comprises a plurality of fan-shaped areas, different fan-shaped areas are isolated from each other, and each fan-shaped area is provided with a gas supply channel;
a plurality of gas pipelines (5) which are respectively connected with a plurality of gas supply channels corresponding to a plurality of fan-shaped areas on the gas spray header (3);
the electronic switch valves (6) are respectively arranged on each gas pipeline (5), and each electronic switch valve (6) is connected with the controller and used for controlling the on-off of the gas pipeline (5);
a flow controller (7) comprising a gas line (5) having an output connected to the annular gas inlet region for controlling the total gas flow supplied to the annular gas inlet region;
a gas source (8) which is connected with the flow controller (7) through a pipeline and is used for providing reaction gas;
the controller controls the electronic switch valves (6) to be alternately switched on and off, so that the flow proportion of the reaction gas flowing into different fan-shaped areas is in direct proportion to the opening time of the electronic switch valve (6) corresponding to each fan-shaped area.
8. The semiconductor etching apparatus according to claim 7, wherein the number of the annular gas inlet regions on the gas shower head (3) is 2 or more, the number of the sector regions on each annular gas inlet region is 2 or more, the number of the gas through holes (4) on the circular gas inlet region and each sector region is 2 or more, and the positions of the gas through holes (4) are uniformly distributed.
9. A semiconductor etching apparatus, comprising:
a reaction chamber (1);
the gas shower head (3) is arranged in a reaction cavity (1) of the semiconductor etching equipment and is positioned above the wafer (2), the gas shower head (3) comprises a circular gas inlet area and at least one concentrically arranged annular gas inlet area, the circular gas inlet area and the annular gas inlet area are isolated from each other, the lower surfaces of the circular gas inlet area and the annular gas inlet area comprise a plurality of gas through holes (4) for introducing reaction gas, each annular gas inlet area comprises a plurality of fan-shaped areas, different fan-shaped areas are isolated from each other, and each fan-shaped area is provided with a gas supply channel;
a plurality of gas pipelines (5) which are respectively connected with a plurality of gas supply channels corresponding to a plurality of fan-shaped areas on the gas spray header (3);
the electronic switch valves (6) are respectively arranged on each gas pipeline (5), and each electronic switch valve (6) is connected with the controller and used for controlling the on-off of the gas pipeline (5);
a plurality of flow restrictors (9) which are respectively arranged on each gas pipeline (5) and are used for ensuring the flow on the gas pipelines to be stable;
a flow controller (7) comprising a gas line (5) having an output connected to the annular gas inlet region for controlling the total gas flow supplied to the annular gas inlet region;
a gas source (8) which is connected with the flow controller (7) through a pipeline and is used for providing reaction gas;
the controller controls the electronic switch valves (6) to be alternately switched on and off, so that the flow proportion of the reaction gas flowing into different fan-shaped areas is in direct proportion to the opening time of the electronic switch valve (6) corresponding to each fan-shaped area.
10. The semiconductor etching apparatus according to claim 9, wherein the number of the annular gas inlet regions on the gas shower head (3) is 2 or more, the number of the sector regions on each annular gas inlet region is 2 or more, the number of the gas through holes (4) on the circular gas inlet region and each sector region is 2 or more, and the positions of the gas through holes (4) are uniformly distributed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611161477.3A CN108231620B (en) | 2016-12-15 | 2016-12-15 | Gas flow control device and gas flow control method thereof |
| TW106136930A TWI662389B (en) | 2016-12-15 | 2017-10-26 | Gas flow control device, gas flow control method, and semiconductor etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611161477.3A CN108231620B (en) | 2016-12-15 | 2016-12-15 | Gas flow control device and gas flow control method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108231620A CN108231620A (en) | 2018-06-29 |
| CN108231620B true CN108231620B (en) | 2021-01-19 |
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| CN109065431B (en) * | 2018-07-27 | 2020-11-24 | 上海华力集成电路制造有限公司 | Oxide gasification and removal device |
| CN113013011B (en) * | 2019-12-20 | 2022-11-29 | 中微半导体设备(上海)股份有限公司 | Gas distribution device and plasma processing apparatus |
| CN111128812A (en) * | 2020-01-17 | 2020-05-08 | 长江存储科技有限责任公司 | Dry etching device |
| CN111290443B (en) * | 2020-04-02 | 2023-04-07 | 广西防城港核电有限公司 | Continuous spraying flow control system of nuclear power station voltage stabilizer |
| CN111769061A (en) * | 2020-07-27 | 2020-10-13 | 上海邦芯半导体设备有限公司 | Inductive coupling reactor and working method thereof |
| CN115206841B (en) * | 2022-07-04 | 2023-10-20 | 北京中科科美科技股份有限公司 | Partition pressure control spray header |
| CN115305458B (en) * | 2022-10-10 | 2023-02-03 | 中微半导体设备(上海)股份有限公司 | Gas distribution part, gas conveying device and film processing device thereof |
| CN117180977A (en) * | 2023-10-26 | 2023-12-08 | 深碳科技(深圳)有限公司 | Solid amine desorption device and solid amine carbon trapping system |
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| TW201837635A (en) | 2018-10-16 |
| TWI662389B (en) | 2019-06-11 |
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