TWM494242U - Reaction gas supply device - Google Patents
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Description
本創作係關於一種與等離子體處理設備配合使用的反應氣體供給裝置。This creation relates to a reactive gas supply device for use with a plasma processing apparatus.
在等離子體處理工藝中，將多種反應氣體混合後通過氣體噴淋單元導入反應腔室中，對半導體待加工件進行等離子體處理工藝。氣體噴淋單元包括多個氣體腔，每個氣體腔連通一個氣體導入通道，氣體導入通道與一個反應氣體混合裝置連通，以導入混合後的反應氣體。通常，相同時間內各氣體導入通道中的反應氣體流量不均勻且不易精確控制，從而反應腔室各區域的反應氣體密度也不均勻且處於一種未知的分佈狀態，而給等離子體處理工藝帶來不確定性。例如，當反應腔室中央部分的反應氣體密度明顯高於邊緣部分的反應氣體密度時，會造成待加工晶片組的中央部分晶片和邊緣部分晶片的厚度不一、反應程度不同。In the plasma treatment process, a plurality of reaction gases are mixed and introduced into the reaction chamber through a gas shower unit to perform a plasma treatment process on the semiconductor workpiece to be processed. The gas shower unit includes a plurality of gas chambers, each of which is connected to a gas introduction passage, and the gas introduction passage communicates with a reaction gas mixing device to introduce the mixed reaction gas. Generally, the flow rate of the reaction gas in each gas introduction channel is not uniform and is not easily controlled in the same time, so that the density of the reaction gas in each region of the reaction chamber is not uniform and is in an unknown distribution state, which brings the plasma treatment process. Uncertainty. For example, when the density of the reaction gas in the central portion of the reaction chamber is significantly higher than the density of the reaction gas in the edge portion, the thickness of the central portion wafer and the edge portion wafer of the wafer group to be processed may be different and the degree of reaction may be different.
現有技術中，採用了調節閥和截流管等裝置來控制各氣體導入通道中反應氣體流量，但仍不能對反應氣體流量實現精確控制，也不能對反應腔室中不同區域的反應氣體分佈進行調控。In the prior art, a regulating valve and a shut-off pipe are used to control the flow rate of the reaction gas in each gas introduction channel, but the reaction gas flow rate cannot be accurately controlled, and the reaction gas distribution in different regions of the reaction chamber cannot be regulated. .
因此，研發人員期望得到一種可精確控制各氣體導入通道中反應氣體流量，從而調控反應腔室中反應氣體分佈的反應氣體供給裝置。Therefore, the developer desires a reaction gas supply device that can precisely control the flow rate of the reaction gas in each gas introduction passage, thereby regulating the distribution of the reaction gas in the reaction chamber.
本創作的目的在於提供一種可精確控制各氣體導入 通道中反應氣體流量的反應氣體供給裝置。The purpose of this creation is to provide a precise control of each gas introduction A reactive gas supply device for the flow of reactant gases in the passage.
為實現上述目的，本創作的技術方案如下：In order to achieve the above objectives, the technical solution of this creation is as follows:
一種反應氣體供給裝置，與等離子體處理設備配合使用，等離子體處理設備至少包括反應腔室和氣體噴淋單元，反應氣體自氣體噴淋單元導入反應腔室，反應氣體供給裝置控制通入反應腔室的反應氣體流量，該供給裝置包括：至少一個氣體導入通道，與氣體噴淋單元連接，反應氣體自氣體導入通道導入氣體噴淋單元；至少一個調節閥，與氣體導入通道配合使用，調節閥調節氣體導入通道中反應氣體的流量；其中，供給裝置更包括一脈寬調製單元，脈寬調製單元發出至少一種脈寬信號控制調節閥調節導入氣體噴淋單元的反應氣體的流量。A reaction gas supply device is used in combination with a plasma processing device. The plasma processing device includes at least a reaction chamber and a gas shower unit. The reaction gas is introduced into the reaction chamber from the gas shower unit, and the reaction gas supply device is controlled to pass into the reaction chamber. The reaction gas flow rate of the chamber, the supply device comprises: at least one gas introduction passage connected to the gas shower unit, the reaction gas is introduced into the gas spray unit from the gas introduction passage; at least one regulating valve is used together with the gas introduction passage, and the regulating valve is used The flow rate of the reaction gas in the gas introduction passage is adjusted; wherein the supply device further comprises a pulse width modulation unit, and the pulse width modulation unit sends at least one pulse width signal control valve to adjust the flow rate of the reaction gas introduced into the gas shower unit.
優選地，氣體噴淋單元至少包括第一氣體腔和第二氣體腔，氣體導入通道至少包括第一通道和第二通道，分別與第一氣體腔和第二氣體腔相連通，調節閥至少包括第一調節閥和第二調節閥，第一調節閥調節通過第一通道導入第一氣體腔的反應氣體流量，第二調節閥調節通過第二通道導入第二氣體腔的反應氣體流量。Preferably, the gas shower unit comprises at least a first gas chamber and a second gas chamber, and the gas introduction passage comprises at least a first passage and a second passage, respectively communicating with the first gas chamber and the second gas chamber, and the regulating valve comprises at least The first regulating valve and the second regulating valve adjust a flow rate of the reaction gas introduced into the first gas chamber through the first passage, and the second regulating valve regulates a flow rate of the reaction gas introduced into the second gas chamber through the second passage.
優選地，相同時間內第一通道中的反應氣體流量大於第二通道中的反應氣體流量。Preferably, the flow rate of the reactive gas in the first passage is greater than the flow rate of the reactive gas in the second passage in the same time.
優選地，脈寬信號包括第一脈寬信號和第二脈寬信號，脈寬調製單元發出第一脈寬信號控制第一調節閥，脈寬調製單元發出第二脈寬信號控制第二調節閥，第一脈寬信號的占空比大於第二脈寬信號的占空比。Preferably, the pulse width signal comprises a first pulse width signal and a second pulse width signal, the pulse width modulation unit sends a first pulse width signal to control the first regulating valve, and the pulse width modulation unit emits a second pulse width signal to control the second regulating valve The duty cycle of the first pulse width signal is greater than the duty cycle of the second pulse width signal.
優選地，調節閥更包括第三調節閥，脈寬信號更包括第三脈寬信號，第三調節閥根據第三脈寬信號穩定第一通道和第二通道中的反應氣體的氣壓。Preferably, the regulating valve further comprises a third regulating valve, the pulse width signal further comprises a third pulse width signal, and the third regulating valve stabilizes the air pressure of the reaction gas in the first channel and the second channel according to the third pulse width signal.
本創作更公開了一種等離子體處理設備，至少包括反應腔室、氣體噴淋單元和反應氣體供給裝置，反應氣體供給裝 置通過氣體噴淋單元向反應腔室供給反應氣體以進行等離子體處理工藝。The present invention further discloses a plasma processing apparatus comprising at least a reaction chamber, a gas shower unit and a reaction gas supply device, and a reaction gas supply device. A reaction gas is supplied to the reaction chamber through the gas shower unit to perform a plasma treatment process.
本創作提供的反應氣體供給裝置設有一脈寬調製單元，其發出脈寬信號來控制調節閥的動作，實現了對各氣體導入通道中反應氣體流量的精確控制，從而使反應腔室中反應氣體分佈處於一種可控狀態，實現了對等離子體處理工藝的程序控制。其實施開銷少，結構簡單。The reactive gas supply device provided by the present invention is provided with a pulse width modulation unit which emits a pulse width signal to control the action of the regulating valve, thereby realizing precise control of the flow rate of the reaction gas in each gas introduction passage, thereby making the reaction gas in the reaction chamber The distribution is in a controllable state, enabling program control of the plasma processing process. The implementation cost is small and the structure is simple.
111‧‧‧第一通道111‧‧‧First Passage
112‧‧‧第二通道112‧‧‧second channel
113‧‧‧第三通道113‧‧‧ third channel
121‧‧‧第一調節閥121‧‧‧First regulating valve
122‧‧‧第二調節閥122‧‧‧Second regulating valve
123‧‧‧第三調節閥123‧‧‧third regulating valve
13‧‧‧脈寬調製單元13‧‧‧ Pulse Width Modulation Unit
141‧‧‧第一截流管141‧‧‧First interceptor
142‧‧‧第二截流管142‧‧‧Second interceptor
15‧‧‧混合腔室15‧‧‧Mixed chamber
21‧‧‧第一氣體腔21‧‧‧First gas chamber
22‧‧‧第二氣體腔22‧‧‧Second gas chamber
圖1示出本創作第一實施例的反應氣體供給裝置結構示意圖；圖2示出本創作第二實施例的反應氣體供給裝置結構示意圖；圖3示出本創作第三實施例的反應氣體供給裝置結構示意圖；及圖4示出本創作第四實施例的反應氣體供給裝置結構示意圖。1 is a schematic structural view of a reaction gas supply device of a first embodiment of the present invention; FIG. 2 is a schematic structural view of a reaction gas supply device of a second embodiment of the present invention; and FIG. 3 is a view showing a reaction gas supply of the third embodiment of the present creation. FIG. 4 is a schematic structural view of a reaction gas supply device according to a fourth embodiment of the present invention.
下面結合附圖，對本創作的具體實施方式作進一步的詳細說明。The specific implementation of the present creation will be further described in detail below with reference to the accompanying drawings.
如圖1所示，本創作第一實施例提供了一種反應氣體供給裝置，其與等離子體處理設備配合使用，等離子體處理設備包括反應腔室和氣體噴淋單元，反應氣體供給裝置將反應氣體通過氣體噴淋頭導入反應腔室中，再向反應腔室施加射頻功率作用於反應氣體產生等離子體，對放置於反應腔室中的待加工半導體工件進行等離子體處理工藝。As shown in FIG. 1, the first embodiment of the present invention provides a reactive gas supply device for use in conjunction with a plasma processing apparatus including a reaction chamber and a gas shower unit, and a reactive gas supply device to react gas The gas shower head is introduced into the reaction chamber, and RF power is applied to the reaction chamber to generate a plasma for the reaction gas to perform plasma treatment on the semiconductor workpiece to be processed placed in the reaction chamber.
其中，氣體噴淋單元包括2個氣體腔，其分別為第一氣體腔21和第二氣體腔22，用於向反應腔室的不同區域導入反應氣體。The gas shower unit includes two gas chambers, which are a first gas chamber 21 and a second gas chamber 22, respectively, for introducing a reaction gas into different regions of the reaction chamber.
該反應氣體供給裝置包括2條氣體導入通道，分別為第一通道111、第二通道112，以及2個調節閥，分別為第一調節閥121、第二調節閥122，以及一脈寬調製單元13。The reaction gas supply device includes two gas introduction channels, which are a first channel 111, a second channel 112, and two regulating valves, respectively a first regulating valve 121, a second regulating valve 122, and a pulse width modulation unit. 13.
第一調節閥121接入第一通道111，以調節第一通道111中反應氣體的流量。第一通道111與氣體噴淋單元的第一氣體腔21連通，以使反應氣體通過第一氣體腔21導入反應腔室中。The first regulating valve 121 is connected to the first passage 111 to adjust the flow rate of the reaction gas in the first passage 111. The first passage 111 communicates with the first gas chamber 21 of the gas shower unit to introduce the reaction gas into the reaction chamber through the first gas chamber 21.
第二調節閥122接入第二通道112，以調節第二通道112中反應氣體的流量。第二通道112與氣體噴淋單元的第二氣體腔22連通，以使反應氣體通過第二氣體腔22導入反應腔室中。The second regulator valve 122 is coupled to the second passage 112 to regulate the flow rate of the reactant gas in the second passage 112. The second passage 112 communicates with the second gas chamber 22 of the gas shower unit to introduce the reaction gas into the reaction chamber through the second gas chamber 22.
第一通道111、第二通道112另一端均與同一個反應氣體混合裝置或混合腔室連通(附圖未示出)，以導入混合後的反應氣體。The other end of the first passage 111 and the second passage 112 are connected to the same reaction gas mixing device or mixing chamber (not shown in the drawing) to introduce the mixed reaction gas.
脈寬調製單元13發出2種脈寬信號，分別為第一脈寬信號和第二脈寬信號，分別用於控制第一調節閥121和第二調節閥122。The pulse width modulation unit 13 emits two kinds of pulse width signals, which are a first pulse width signal and a second pulse width signal, respectively, for controlling the first regulating valve 121 and the second regulating valve 122, respectively.
具體地，當第一脈寬信號為高電平時，第一調節閥121完全打開，反應氣體無阻礙地自第一通道111通入第一氣體腔21中；當第一脈寬信號為低電平時，第一調節閥121關閉，第一通道111被隔斷。Specifically, when the first pulse width signal is at a high level, the first regulating valve 121 is fully opened, and the reaction gas is unimpeded from the first passage 111 into the first gas chamber 21; when the first pulse width signal is low Normally, the first regulating valve 121 is closed and the first passage 111 is blocked.
當第一脈寬信號具有一定的頻率時，通過控制第一調節閥121，第一通道111的通或斷的狀態會很快地進行切換，即第一調節閥121以較高的頻率開或關，第一調節閥121打開或關閉的頻率對應於第一脈寬信號的頻率，從而根據第一脈寬信號的占空比以及頻率可調節第一通道111中的反應氣體流量。When the first pulse width signal has a certain frequency, by controlling the first regulating valve 121, the on or off state of the first passage 111 is quickly switched, that is, the first regulating valve 121 is opened at a higher frequency or Off, the frequency at which the first regulator valve 121 is turned on or off corresponds to the frequency of the first pulse width signal, so that the flow rate of the reactant gas in the first passage 111 can be adjusted according to the duty ratio and frequency of the first pulse width signal.
或者，調節閥並不處於完全打開或關閉的狀態，而是為部分打開的狀態，例如，當第一脈寬信號為高電平時，第一調節閥121控制反應氣體以第一流速流經第一通道111；當第一脈寬信號為低電平時，第一調節閥121控制反應氣體以第二流速流經第一通道111，其中，第一流速大於第二流速。第一調節閥121在上述兩種狀態間切換的頻率對應於第一脈寬信號的頻率。Alternatively, the regulating valve is not in a fully open or closed state, but is in a partially open state. For example, when the first pulse width signal is at a high level, the first regulating valve 121 controls the reaction gas to flow through the first flow rate. a channel 111; when the first pulse width signal is low, the first regulating valve 121 controls the reaction gas to flow through the first channel 111 at a second flow rate, wherein the first flow rate is greater than the second flow rate. The frequency at which the first regulator valve 121 switches between the above two states corresponds to the frequency of the first pulse width signal.
類似地，第二脈寬信號以同樣的原理控制第二調節 閥122，根據第二脈寬信號的占空比以及頻率調節第二通道112中的反應氣體流量。Similarly, the second pulse width signal controls the second adjustment with the same principle The valve 122 adjusts the flow rate of the reactive gas in the second passage 112 according to the duty ratio and frequency of the second pulse width signal.
進一步地，相同時間內第一通道111中的反應氣體流量大於第二通道112中的反應氣體流量，以使反應腔室中央區域的反應氣體密度高於邊緣區域的反應氣體密度，以滿足等離子體處理工藝對反應氣體分佈的要求。Further, the flow rate of the reaction gas in the first channel 111 is greater than the flow rate of the reaction gas in the second channel 112 in the same time, so that the density of the reaction gas in the central region of the reaction chamber is higher than the density of the reaction gas in the edge region to satisfy the plasma. The process requirements for the distribution of the reactant gases.
進一步地，第一脈寬信號的占空比大於第二脈寬信號的占空比。Further, the duty ratio of the first pulse width signal is greater than the duty ratio of the second pulse width signal.
進一步地，脈寬調製單元13包括一脈寬調製控制器和一參數設置平臺，用戶通過該參數設置平臺可設置第一、第二脈寬信號的占空比以及頻率等參數，脈寬調製控制器根據這些參數發出第一、第二脈寬信號。Further, the pulse width modulation unit 13 includes a pulse width modulation controller and a parameter setting platform. The user can set parameters such as duty ratio and frequency of the first and second pulse width signals through the parameter setting platform, and pulse width modulation control. The first and second pulse width signals are issued according to these parameters.
進一步地，脈寬調製控制器發出的第一、第二脈寬信號頻率均大於50HZ。Further, the first and second pulse width signals emitted by the pulse width modulation controller are both greater than 50 Hz.
圖2示出根據本創作第二實施例的反應氣體供給裝置。和第一實施例的反應氣體供給裝置相比，其更包括第三通道113和第三調節閥123，其中第三通道113一端與第一通道111、第二通道112分別連通，另一端與一個反應氣體混合裝置或混合腔室連通(附圖未示出)，反應氣體自第三通道113分別導入第一通道111、第二通道112中，再導向氣體噴淋單元。第三調節閥123接入第三通道113中，用於穩定第一通道111、第二通道112中的反應氣體的氣壓，另一方面，第三調節閥123可以同時調節第一通道111、第二通道112中的反應氣體流量。Fig. 2 shows a reaction gas supply device according to a second embodiment of the present creation. Compared with the reaction gas supply device of the first embodiment, it further includes a third passage 113 and a third regulating valve 123, wherein one end of the third passage 113 communicates with the first passage 111 and the second passage 112, respectively, and the other end and one The reaction gas mixing device or the mixing chamber is connected (not shown in the drawing), and the reaction gas is introduced into the first passage 111 and the second passage 112 from the third passage 113, respectively, and is guided to the gas shower unit. The third regulating valve 123 is inserted into the third passage 113 for stabilizing the air pressure of the reaction gas in the first passage 111 and the second passage 112. On the other hand, the third regulating valve 123 can simultaneously adjust the first passage 111, the first The flow of reactant gas in the second channel 112.
具體地，脈寬調製單元13發出第三脈寬信號，根據其占空比以及頻率控制第三調節閥123的調節動作。當第三脈寬信號為高電平時，第三調節閥123完全打開，反應氣體無阻礙地流過第三通道113，從而進入第一通道111、第二通道112，當第三脈寬信號為低電平時，第三調節閥123關閉，第三通道113被 關閉。第三調節閥123打開或關閉的頻率對應於第三脈寬信號的頻率。Specifically, the pulse width modulation unit 13 issues a third pulse width signal, and controls the adjustment operation of the third regulating valve 123 according to its duty ratio and frequency. When the third pulse width signal is at a high level, the third regulating valve 123 is fully opened, and the reaction gas flows through the third channel 113 unimpeded, thereby entering the first channel 111 and the second channel 112, when the third pulse width signal is When the level is low, the third regulating valve 123 is closed, and the third channel 113 is shut down. The frequency at which the third regulating valve 123 is opened or closed corresponds to the frequency of the third pulse width signal.
或者，第三調節閥123並不處於完全打開或關閉的狀態，而是為部分打開的狀態，例如，當第三脈寬信號為高電平時，第三調節閥123控制反應氣體以較高流速流經第三通道113；當第三脈寬信號為低電平時，第三調節閥123控制反應氣體以較低流速流經第三通道113。第三調節閥123在上述兩種狀態間切換的頻率對應於第三脈寬信號的頻率。Alternatively, the third regulating valve 123 is not in a fully open or closed state, but is in a partially open state, for example, when the third pulse width signal is at a high level, the third regulating valve 123 controls the reaction gas to a higher flow rate. Flowing through the third channel 113; when the third pulse width signal is low, the third regulating valve 123 controls the reaction gas to flow through the third channel 113 at a lower flow rate. The frequency at which the third regulator valve 123 switches between the above two states corresponds to the frequency of the third pulse width signal.
脈寬調製單元13更發出第一脈寬信號和第二脈寬信號，分別用於控制第一調節閥121和第二調節閥122。當第一脈寬信號為高電平時，第一調節閥121完全打開，反應氣體無阻礙地自第一通道111通入第一氣體腔21中；當第一脈寬信號為低電平時，第一調節閥121關閉，第一通道111被隔斷。或者，調節閥並不處於完全打開或關閉的狀態，而是為部分打開的狀態，高、低電平分別對應於反應氣體不同的流速。The pulse width modulation unit 13 further generates a first pulse width signal and a second pulse width signal for controlling the first regulating valve 121 and the second regulating valve 122, respectively. When the first pulse width signal is at a high level, the first regulating valve 121 is fully opened, and the reaction gas is unimpeded from the first passage 111 into the first gas chamber 21; when the first pulse width signal is low, the first A regulating valve 121 is closed and the first passage 111 is blocked. Alternatively, the regulating valve is not in a fully open or closed state, but is in a partially open state, and the high and low levels respectively correspond to different flow rates of the reaction gases.
即第一脈寬信號根據其占空比以及頻率來調節第一通道111中的反應氣體流量，第二脈寬信號以同樣的原理控制第二調節閥122，根據第二脈寬信號的占空比以及頻率調節第二通道112中的反應氣體流量。That is, the first pulse width signal adjusts the flow rate of the reactive gas in the first channel 111 according to its duty ratio and frequency, and the second pulse width signal controls the second regulating valve 122 by the same principle, according to the duty of the second pulse width signal. The ratio and frequency adjust the flow of reactant gases in the second passage 112.
進一步地，相同時間內第一通道111中的反應氣體流量大於第二通道112中的反應氣體流量。Further, the flow rate of the reaction gas in the first passage 111 is greater than the flow rate of the reaction gas in the second passage 112 in the same time.
進一步地，第一脈寬信號的占空比大於第二脈寬信號的占空比。Further, the duty ratio of the first pulse width signal is greater than the duty ratio of the second pulse width signal.
進一步地，脈寬調製單元13包括一脈寬調製控制器和一參數設置平臺，用戶通過該參數設置平臺可設置第一、第二、第三脈寬信號的占空比以及頻率等參數，脈寬調製控制器根據這些參數發出第一、第二和第三脈寬信號。Further, the pulse width modulation unit 13 includes a pulse width modulation controller and a parameter setting platform. The user can set parameters such as duty ratio and frequency of the first, second, and third pulse width signals through the parameter setting platform. The wide modulation controller issues the first, second and third pulse width signals based on these parameters.
進一步地，第一、第二、第三脈寬信號頻率均大於 50HZ。Further, the first, second, and third pulse width signals are all greater than 50HZ.
進一步地，第一、第二和第三調節閥121、122、123為氣動調節閥。Further, the first, second and third regulating valves 121, 122, 123 are pneumatic regulating valves.
圖3示出根據本創作第三實施例的反應氣體供給裝置。和第二實施例的反應氣體供給裝置相比，其更包括第一截流管141和第二截流管142。Fig. 3 shows a reaction gas supply device according to a third embodiment of the present creation. Compared with the reaction gas supply device of the second embodiment, it further includes a first intercepting pipe 141 and a second intercepting pipe 142.
第一截流管141接入第一通道111中，並根據該第一截流管141兩端的反應氣體壓力差，使第一通道111中的反應氣體流量保持恒定。第二截流管142接入第二通道112中，並根據該第二截流管142兩端的反應氣體壓力差，使第二通道112中的反應氣體流量保持恒定。The first intercepting pipe 141 is inserted into the first passage 111, and the flow rate of the reaction gas in the first passage 111 is kept constant according to the reaction gas pressure difference across the first intercepting pipe 141. The second intercepting pipe 142 is inserted into the second passage 112, and the flow rate of the reaction gas in the second passage 112 is kept constant according to the reaction gas pressure difference across the second intercepting pipe 142.
進一步地，相同時間內第一通道111中的反應氣體流量大於第二通道112中的反應氣體流量。Further, the flow rate of the reaction gas in the first passage 111 is greater than the flow rate of the reaction gas in the second passage 112 in the same time.
進一步地，第一脈寬信號的占空比大於第二脈寬信號的占空比。Further, the duty ratio of the first pulse width signal is greater than the duty ratio of the second pulse width signal.
進一步地，第一、第二、第三脈寬信號頻率均大於50HZ。Further, the first, second, and third pulse width signal frequencies are all greater than 50 Hz.
圖4示出根據本創作第四實施例的反應氣體供給裝置。和第三實施例的反應氣體供給裝置相比，其更包括一反應氣體混合腔室15，混合腔室15更設有多個反應氣體導入口(附圖未示出)，反應氣體在該混合腔室15中進行充分地、均勻地混合，再依次通過氣體導入通道、氣體噴淋單元進入到反應腔室中與半導體待加工件進行等離子體處理工藝。Fig. 4 shows a reaction gas supply device according to a fourth embodiment of the present creation. Compared with the reaction gas supply device of the third embodiment, it further includes a reaction gas mixing chamber 15, and the mixing chamber 15 is further provided with a plurality of reaction gas introduction ports (not shown in the drawing) in which the reaction gas is mixed. The chamber 15 is sufficiently and uniformly mixed, and then enters into the reaction chamber through the gas introduction passage and the gas shower unit in sequence to perform a plasma treatment process with the semiconductor workpiece.
本領域技術人員理解，本創作提供的反應氣體供給裝置可以包括一個或多個氣體導入通道，以及一個或多個調節閥，只要調節閥能受到脈寬調製單元的控制，來相應地調節氣體導入通道中的反應氣體流量，均應落入本創作的保護範圍。Those skilled in the art understand that the reactive gas supply device provided by the present invention may include one or more gas introduction channels and one or more regulating valves as long as the regulating valve can be controlled by the pulse width modulation unit to adjust the gas introduction accordingly. The flow of reactive gases in the channel should fall within the scope of this creation.
本創作第五實施例提供一種等離子體處理設備(附 圖未示出)，包括反應腔室、氣體噴淋單元和反應氣體供給裝置，反應氣體供給裝置通過氣體噴淋單元向反應腔室供給反應氣體，再由射頻電源向反應腔室施加射頻功率作用於反應氣體後產生等離子體，對放置於反應腔室中的待加工半導體工件進行等離子體處理工藝。The fifth embodiment of the present invention provides a plasma processing apparatus (attached The figure is not shown), including a reaction chamber, a gas shower unit and a reaction gas supply device. The reaction gas supply device supplies a reaction gas to the reaction chamber through the gas shower unit, and then RF power is applied to the reaction chamber by the RF power source. A plasma is generated after the reaction gas, and a plasma processing process is performed on the semiconductor workpiece to be processed placed in the reaction chamber.
其中，反應氣體供給裝置可以採用如本創作第一、第二、第三或第四中的任一種結構，均可實施本創作，並達成類同的技術效果。Wherein, the reaction gas supply device can adopt any one of the first, second, third or fourth structures of the present invention, and the present invention can be implemented and achieve similar technical effects.
以上所述的僅為本創作的優選實施例，所述實施例並非用以限制本創作的專利保護範圍，因此凡是運用本創作的說明書及附圖內容所作的等同結構變化，同理均應包含在本創作的保護範圍內。The above descriptions are only preferred embodiments of the present invention, and the embodiments are not intended to limit the scope of patent protection of the present invention. Therefore, all equivalent structural changes made by using the present specification and the contents of the drawings should be included in the same reason. Within the scope of this creation.
111‧‧‧第一通道111‧‧‧First Passage
112‧‧‧第二通道112‧‧‧second channel
121‧‧‧第一調節閥121‧‧‧First regulating valve
122‧‧‧第二調節閥122‧‧‧Second regulating valve
13‧‧‧脈寬調製單元13‧‧‧ Pulse Width Modulation Unit
21‧‧‧第一氣體腔21‧‧‧First gas chamber
22‧‧‧第二氣體腔22‧‧‧Second gas chamber
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| CN 201220445219 CN202830168U (en) | 2012-09-03 | 2012-09-03 | Reactant gas supply device |
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| TWM494242U true TWM494242U (en) | 2015-01-21 |
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| CN104150431A (en) * | 2013-05-14 | 2014-11-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas intake system and substrate processing device |
| CN104576279B (en) * | 2013-10-22 | 2017-02-15 | 中微半导体设备(上海)有限公司 | Gas adjusting device and plasma reactor employing same |
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