CN109065431B - Oxide gasification and removal device - Google Patents
Oxide gasification and removal device Download PDFInfo
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- CN109065431B CN109065431B CN201810840380.8A CN201810840380A CN109065431B CN 109065431 B CN109065431 B CN 109065431B CN 201810840380 A CN201810840380 A CN 201810840380A CN 109065431 B CN109065431 B CN 109065431B
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- gas
- gas inlet
- oxide
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- exhaust
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3346—Selectivity
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to an oxide gasification removing device, which relates to the semiconductor integrated circuit manufacturing technology and comprises a reaction cavity, wherein the reaction cavity comprises a wafer bearing table used for bearing a wafer; the gas inlet device is assembled with the reaction cavity and comprises a cover plate, a plurality of gas inlet pipes and a plurality of gas flow control valves, the gas inlet pipes penetrate through the cover plate so that external gas can enter the reaction cavity through the gas inlet pipes, and each gas inlet pipe is provided with one gas flow control valve for controlling the amount of the gas flowing through the gas inlet pipe; and the exhaust device is connected with the reaction cavity in an assembling mode and used for exhausting gas generated in the oxide gasification removal process so as to remove the oxide in a specific area on the wafer through gasification etching and realize selective etching.
Description
Technical Field
The present invention relates to semiconductor integrated circuit manufacturing technology, and more particularly, to an oxide vaporization removal apparatus.
Background
In semiconductor integrated circuit technology, the removal of oxide films on wafers is an essential step. In the development of semiconductor production of 28 nm and below, oxide films are removed by vaporization, and the etching selectivity of the oxide films for different growth modes can be close to 1. Oxide vaporization removal etch oxide films with gases such as hydrogen fluoride, requiring a specific range of selective etches at 28 nm and during the following process development due to the influence of previous layer processes.
Therefore, in the manufacture of semiconductor integrated circuits, an oxide vaporization removal apparatus is required to achieve precise selective etching.
Disclosure of Invention
The invention aims to provide an oxide gasification removal device, which is used for removing oxide in a specific area on a wafer through gasification etching and realizing selective etching.
The oxide gasification and removal device provided by the invention comprises: the reaction chamber comprises a wafer bearing table used for bearing a wafer; the gas inlet device is assembled with the reaction cavity and comprises a cover plate, a plurality of gas inlet pipes and a plurality of gas flow control valves, the gas inlet pipes penetrate through the cover plate so that external gas can enter the reaction cavity through the gas inlet pipes, and each gas inlet pipe is provided with one gas flow control valve for controlling the amount of the gas flowing through the gas inlet pipe; and the exhaust device is connected with the reaction cavity in an assembling mode and is used for exhausting gas generated in the oxide gasification removal process.
Furthermore, the gas flow control valve controls the opening or closing of the gas inlet pipe, or controls the size of the opened gas inlet pipe.
Further, the gas flow control valve is an electric valve.
Furthermore, each air inlet pipe further comprises an air injection hole, and the air injection hole is arranged on the cover plate and is positioned at one end, close to the wafer arranged on the wafer bearing table, of the air inlet pipe.
Further, the air inlet pipe is made of an acid-resistant and alkali-resistant material.
Furthermore, an opening is formed in a side wall of the reaction chamber, and the air inlet device is disposed in the opening and fixed in the opening.
Furthermore, the plurality of air inlet pipes are arranged opposite to the wafer placed on the wafer bearing table.
Furthermore, the plurality of air inlet pipes are directly opposite to the wafer placed on the wafer bearing table.
Furthermore, the plurality of air inlet pipes are uniformly arranged on the cover plate.
Furthermore, the plurality of air inlet pipes cover the wafer placed on the wafer bearing table.
Furthermore, the plurality of air inlet pipes are distributed annularly, and the area covered by the plurality of air inlet pipes is the same as the area of the wafer arranged on the wafer bearing table.
Further, the exhaust device comprises at least one exhaust hole, and the at least one exhaust hole is arranged on the side wall of the reaction cavity body, which is opposite to the cover plate.
Furthermore, the exhaust device comprises two exhaust holes which are respectively arranged on two sides of the wafer bearing platform.
Furthermore, the exhaust device further comprises at least one air pump, and one air pump is arranged at the outlet of each exhaust hole.
In an embodiment of the present invention, the gas inlet device is disposed on the reaction chamber of the oxide removal device, the gas inlet device includes a plurality of gas inlet pipes, each gas inlet pipe is provided with a gas flow control valve, and the gas flow control valve controls the opening or closing of the gas inlet pipe or controls the size of the opened gas inlet pipe, so as to remove the oxide in a specific area on the wafer by means of vapor etching, thereby achieving selective etching.
Drawings
FIG. 1 is a schematic view of an oxide removal apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic layout view of an intake duct according to an embodiment of the present invention.
The reference numerals of the main elements in the figures are explained as follows:
110. a reaction chamber; 112. a wafer bearing table; 138. a gas injection hole; 114. an opening; 120. a wafer; 130. an air intake device; 136. a gas flow control valve; 132. a cover plate; 134. an air inlet pipe; 140. an exhaust device; 142. an exhaust hole; 144. an air extractor.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In one embodiment of the present invention, an oxide vaporization removal apparatus is provided, including: the reaction chamber comprises a wafer bearing table used for bearing a wafer; the gas inlet device is connected with the reaction cavity in an assembling mode and comprises a cover plate, a plurality of gas inlet pipes and a plurality of gas flow control valves, the plurality of gas inlet pipes penetrate through the cover plate so that external gas can enter the reaction cavity through the plurality of gas inlet pipes, and each gas inlet pipe is provided with one gas flow control valve for controlling the amount of the gas flowing through the gas inlet pipe; and the exhaust device is connected with the reaction cavity in an assembling mode and is used for exhausting gas generated in the oxide gasification removal process.
Specifically, referring to fig. 1, fig. 1 is a schematic diagram of an oxide vaporization removal apparatus according to an embodiment of the present invention. As shown in fig. 1, the oxide vaporization removal apparatus includes:
the reaction chamber 110 includes a wafer stage 112 for carrying a wafer 120 therein.
The gas inlet device 130, the gas inlet device 130 is assembled with the reaction chamber 110, the gas inlet device 130 includes a cover plate 132, a plurality of gas inlet pipes 134 and a plurality of gas flow control valves 136, the plurality of gas inlet pipes 134 pass through the cover plate 132, so that the external gas can enter the reaction chamber 110 through the plurality of gas inlet pipes 134, and each gas inlet pipe 134 is provided with a gas flow control valve 136 for controlling the amount of the gas flowing through the gas inlet pipe 134. In an embodiment of the present invention, the gas flow control valve 136 controls to open or close the gas inlet pipe 134, or controls to open the size of the gas inlet pipe 134, so that the oxide in a specific region on the wafer can be removed by the vapor etching, thereby implementing the selective etching.
In an embodiment of the present invention, the gas flow control valve 136 is an electric valve, and is driven by an electric actuator to open, close and adjust the electric valve, so as to control the gas flow control valve 136.
In one embodiment of the present invention, the inlet tube 134 is made of an acid and alkali resistant material, such as polytetrafluoroethylene.
In an embodiment of the invention, a sidewall of the reaction chamber 110 includes an opening 114, and the gas inlet device 130 is disposed in the opening 114 and fixed in the opening 114.
In one embodiment of the present invention, each gas inlet tube 134 further includes a gas injection hole 138, and the gas injection hole 138 is disposed on the cover plate 132 and located at one end of the gas inlet tube 134 close to the wafer 120 for spraying the reaction gas into the reaction chamber 110.
In one embodiment of the present invention, a plurality of gas inlets 134 are disposed opposite to the wafer 120 disposed on the stage 112, so that the reaction gas passing through the gas inlets 134 acts on the wafer. Preferably, the plurality of gas inlets 134 are disposed directly opposite the wafer 120 disposed on the stage 112. Furthermore, in an embodiment of the present invention, the plurality of gas inlets 134 are uniformly disposed on the cover plate 132, so as to expand the range of controlling the vapor etching on the wafer disposed on the stage 112 and uniformly etch the oxide on the wafer. Further, in one embodiment of the present invention, the plurality of gas inlets 134 covers the wafer 120 disposed on the stage 112, so as to control the oxide etching on the entire wafer 120. Further, in an embodiment of the present invention, the plurality of air inlets 134 are distributed in a ring shape, and an area covered by the plurality of air inlets 134 is the same as an area of the wafer placed on the wafer stage 112, specifically referring to fig. 2, fig. 2 is a schematic layout diagram of the air inlets according to an embodiment of the present invention, wherein each point represents one air inlet 134.
The exhaust device 140, the exhaust device 140 and the reaction chamber 110 are assembled to exhaust the gas generated during the oxide removal process.
Specifically, in one embodiment of the present invention, as shown in fig. 1, the exhaust device 140 includes at least one exhaust hole 142, the at least one exhaust hole 142 is disposed on a side wall of the reaction chamber 110 opposite to the cover plate 132, i.e., on a side wall of the stage 112, such that gas generated during the oxide evaporation process on the wafer can be exhausted through the exhaust hole, and the exhaust hole 142 is disposed opposite to the inlet pipe 134, which facilitates the gas generated during the oxide evaporation process on the wafer to be exhausted out of the reaction chamber 110. In an embodiment of the present invention, as shown in fig. 1, the exhaust device 140 includes two exhaust holes 142, and the two exhaust holes 142 are respectively disposed on two sides of the stage 112.
In one embodiment of the present invention, as shown in FIG. 1, the exhaust apparatus 140 further comprises at least one gas extractor 144, and a gas extractor is disposed at the outlet of each exhaust hole 142 for extracting gas generated during the oxide vaporization process on the wafer in the reaction chamber 110.
Thus, in an embodiment of the present invention, the gas inlet device is disposed on the reaction chamber of the oxide removal device, the gas inlet device includes a plurality of gas inlet pipes, each gas inlet pipe is provided with a gas flow control valve, and the gas flow control valve controls the opening or closing of the gas inlet pipe or controls the size of the opened gas inlet pipe, so as to remove the oxide in a specific region on the wafer by vapor etching, thereby achieving selective etching.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (11)
1. An oxide gasification removal apparatus, comprising:
the reaction chamber comprises a wafer bearing table used for bearing a wafer;
the gas inlet device comprises a cover plate, a plurality of gas inlet pipes and a plurality of gas flow control valves, wherein the plurality of gas inlet pipes penetrate through the cover plate so that external gas can enter the reaction cavity through the plurality of gas inlet pipes; and
and the exhaust device is connected with the reaction cavity in an assembling mode and is used for exhausting gas generated in the oxide gasification removal process.
2. The apparatus of claim 1, wherein the gas flow control valve controls opening or closing of the gas inlet pipe, or controls opening of the gas inlet pipe.
3. The apparatus according to claim 1, wherein the gas flow control valve is an electrically operated valve.
4. The oxide gasification removal apparatus of claim 1, wherein the inlet pipe is made of an acid-and alkali-resistant material.
5. The apparatus of claim 1, wherein a sidewall of the reaction chamber includes an opening, and the gas inlet device is disposed in the opening and secured in the opening.
6. The oxide gasification removal apparatus of claim 1, wherein the plurality of inlet pipes are uniformly disposed on the cover plate.
7. The oxide vaporization removal apparatus of claim 1, wherein the plurality of gas inlets cover a wafer placed on the stage.
8. The apparatus of claim 1, wherein the plurality of gas inlets are distributed in a ring shape, and cover an area equal to an area of a wafer placed on the susceptor.
9. The oxide gasification removal apparatus of claim 1, wherein the exhaust apparatus comprises at least one exhaust hole disposed on a side wall of the reaction chamber opposite the cover plate.
10. The oxide gasification removal apparatus of claim 9, wherein the exhaust apparatus comprises two exhaust holes, the two exhaust holes being respectively disposed on both sides of the stage.
11. The apparatus according to claim 9, wherein said exhaust means further comprises at least one air extractor, one said air extractor being provided at each said exhaust outlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810840380.8A CN109065431B (en) | 2018-07-27 | 2018-07-27 | Oxide gasification and removal device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810840380.8A CN109065431B (en) | 2018-07-27 | 2018-07-27 | Oxide gasification and removal device |
Publications (2)
| Publication Number | Publication Date |
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| CN109065431A CN109065431A (en) | 2018-12-21 |
| CN109065431B true CN109065431B (en) | 2020-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810840380.8A Active CN109065431B (en) | 2018-07-27 | 2018-07-27 | Oxide gasification and removal device |
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| CN (1) | CN109065431B (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008059831A1 (en) * | 2006-11-13 | 2008-05-22 | Tokyo Electron Limited | Method for supplying treatment gas, treatment gas supply system, and system for treating object |
| CN102828167B (en) * | 2011-06-13 | 2015-02-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Exhaust method, exhaust apparatus and substrate treatment equipment |
| CN202359196U (en) * | 2011-09-29 | 2012-08-01 | 中微半导体设备(上海)有限公司 | Gas flow control device for metal organic chemical vapor deposition (MOCVD) reaction chamber |
| CN203112919U (en) * | 2013-02-27 | 2013-08-07 | 京东方科技集团股份有限公司 | Gas phase processing device |
| CN103280495B (en) * | 2013-06-17 | 2016-08-17 | 奥特斯维能源（太仓）有限公司 | A kind of method controlling back-etching amount |
| CN108231620B (en) * | 2016-12-15 | 2021-01-19 | 中微半导体设备(上海)股份有限公司 | Gas flow control device and gas flow control method thereof |
| CN108231632A (en) * | 2018-01-08 | 2018-06-29 | 德淮半导体有限公司 | nozzle and gas supply system |
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