CN103962353B - The cavity cleaning method of plasma etching apparatus - Google Patents
The cavity cleaning method of plasma etching apparatus Download PDFInfo
- Publication number
- CN103962353B CN103962353B CN201410127005.0A CN201410127005A CN103962353B CN 103962353 B CN103962353 B CN 103962353B CN 201410127005 A CN201410127005 A CN 201410127005A CN 103962353 B CN103962353 B CN 103962353B
- Authority
- CN
- China
- Prior art keywords
- process gas
- reaction
- cavity
- air admission
- cleaning method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/093—Cleaning containers, e.g. tanks by the force of jets or sprays
Abstract
The invention discloses a kind of cavity cleaning method of plasma etching apparatus, described plasma etching apparatus comprises reaction cavity, air admission unit and pumping cells.Described cavity cleaning method comprises: pass into the first process gas and rinse described air admission unit, and at least part of byproduct of reaction of described air admission unit inwall is peeled off; Pass into the second process gas and form the plasma of described second process gas, with the reaction by-products of the described byproduct of reaction that peels off and described reaction cavity inwall to clean the inwall of described reaction cavity; And increase the pressure of described second process gas, to make in the plasma of described second process gas and described air admission unit unpeeled described reaction by-products to clean the inwall of described air admission unit.The present invention can effectively reduce air admission unit residue deposition and drop and cause the risk of crystal circle center's agglomerated defect.
Description
Technical field
The present invention relates to semiconductor processing technology field, particularly a kind of cavity cleaning method of plasma etching apparatus.
Background technology
In recent years, along with the development of semiconductor fabrication process, to the integrated level of element and performance requirement more and more higher, the plasma of plasma etching (PlasmaEtchingTechnology) by making etching gas excite formation, is just playing a part very important in the art of semiconductor manufacturing.As a rule, in plasma etching apparatus, plasma is generally that the etching gas of being discharged by the air admission unit being positioned at reaction chamber top is formed through radio-frequency drive, and plasma bombardment is positioned at the wafer on chuck, thus realizes the etching to wafer.
Fig. 1 illustrates a kind of structural representation of plasma etching apparatus.Plasma processing apparatus comprises reaction cavity 1, and air admission unit 2 is connected with the reacting gas source (not shown) outside reaction cavity, inputs in reaction cavity for the reacting gas provided by reacting gas source.Reacting gas ionizes as plasma under radio frequency source effect, to realize the etching to wafer.In general, for improving the symmetry of reaction cavity, plasma etching apparatus adopts air feeding in center, and air admission unit 2 is arranged at the center position of reaction cavity upper portion insulating cover plate.Reaction cavity is also connected with external vacuum suction device (not shown), in order to by with cross reacting gas extraction cavity 1.
But when reaction cavity service time is longer, etch by-products can be attached on cavity inner wall, so in ensuing etching process, accessory substances of these attachments also can be subject to plasma bombardment and produce particle and to drop polluting wafer on wafer.Therefore, for improving the stability of etching, before execution etching technics, usually can clean reaction cavity.When tradition is cleaned reaction cavity, mostly be carry out under low vacuum pressure environment, but vacuum suction device has stronger exhaust capacity usually, the plasma of cleaning reacting gas does not also fully react with accessory substance and just may be detached reaction cavity by vacuum suction device very soon, thus reduces cleaning performance; And the air admission unit being positioned at reaction cavity far-end is more difficult to because air inlet path is longer be cleaned completely, causes the superposition that air admission unit inwall accessory substance is residual, increase the risk dropping and agglomerated defect occurs in crystal circle center and causes product yield to reduce.
Therefore, be necessary to make further improvements to overcome above-mentioned defect to existing cavity cleaning method.
Summary of the invention
Main purpose of the present invention is the defect overcoming prior art, provides a kind of method for etching plasma, can prevent because air admission unit residue deposition causes the agglomerated defect of crystal circle center.
For reaching above-mentioned purpose, the invention provides a kind of cavity cleaning method of plasma etching apparatus, described plasma etching apparatus comprises reaction cavity, air admission unit and pumping cells, and described cavity cleaning method comprises:
Step 1: pass into the first process gas and rinse described air admission unit, makes at least part of byproduct of reaction of described air admission unit inwall peel off;
Step 2: pass into the second process gas and form the plasma of described second process gas, makes the reaction by-products of the plasma of described second process gas and the described byproduct of reaction that peels off and described reaction cavity inwall to clean the inwall of described reaction cavity; And
Step 3: the pressure increasing described second process gas, to make in the plasma of described second process gas and described air admission unit unpeeled described reaction by-products to clean the inwall of described air admission unit.
Preferably, described byproduct of reaction is SiO
xcl
y, described second process gas is NF
3.
Preferably, the gas flow of described first process gas is greater than the gas flow of described second process gas.
Preferably, pass into the number of times that described first process gas rinses described air admission unit in step 1 and be more than or equal to 5 times
Preferably, the pressure of described first process gas is less than the pressure of the second process gas described in step 2, and gas flow is for being more than or equal to 500sccm; The pressure of the second process gas described in step 2 is for being less than or equal to 10 millitorrs, and gas flow is for being less than or equal to 50sccm.
Preferably, the pressure of the second process gas described in step 3 is for being more than or equal to 60 millitorrs, and gas flow is for being less than or equal to 50sccm.
Preferably, described cavity cleaning method also comprise pass into oxygen and ionized formed plasma, to clean the step of the carbonaceous by-products in described reaction cavity.
Preferably, described cavity cleaning method also comprises and on described cavity inner wall, grows one deck SiO by chemical vapour deposition (CVD)
xcl
ystep.
Preferably, described air admission unit is arranged at described reaction cavity top and is positioned at directly over wafer to be etched.
Preferably, described pumping cells is connected with described reaction cavity by control valve, in each step of described cleaning method, by controlling the aperture of described control valve to regulate the air pressure in described reaction cavity.
The beneficial effect of cleaning method of the present invention is by first using low-pressure, high flow capacity gas rinses repeatedly to cavity, peel off most of etch by-products of air admission unit inwall, the plasma re-using low discharge fluoro-gas cleans the etch by-products peeling off and be deposited on cavity inner wall simultaneously, the reflux characteristic of the plasma of low discharge fluoro-gas under elevated pressures is finally utilized to extend the time of staying of plasma in air admission unit, increase the etching reaction to accessory substance in air admission unit inwall, remove the etch by-products at its dead angle, finally reach accessory substance when reducing wafer etching to drop risk, optimize the object of crystal circle center's agglomerated defect, and cleaning method of the present invention realizes simply with low cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of plasma etching apparatus in prior art;
Fig. 2 is the flow chart of the cavity cleaning method of one embodiment of the invention;
Fig. 3 a ~ 3f is the schematic diagram of the cavity cleaning method of one embodiment of the invention.
Detailed description of the invention
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
Fig. 2 shows the flow chart of the cavity cleaning method of plasma etching apparatus of the present invention, and Fig. 3 a ~ 3f shows the cavity cleaning method of the plasma etching device that one embodiment of the present invention provides.Should be appreciated that, in figure, plasma etching apparatus is only exemplary, and it can comprise less or more element, or the arrangement of this element may be different from shown in Fig. 3 a ~ 3f.
As shown in Fig. 3 a ~ 3f, plasma etching apparatus comprises reaction cavity 30, air admission unit 31 and pumping cells.Air admission unit 31 is for by the reaction cavities 30 such as reacting gas input required in cavity cleaning.Pumping cells (such as vavuum pump) is connected with reaction cavity by control valve, in order to the reacting gas used in reaction cavity and reaction are generated gas extraction cavity 30 in cleaning process.Controlled the suction performance of adjustable pumping cells by the aperture of control valve, also just can control the air pressure in reaction cavity.In the present embodiment, plasma etching apparatus adopts air feeding in center, and air admission unit 31 is arranged at the center position at reaction cavity top and is positioned at directly over wafer to be etched.
Next composition graphs 2 and Fig. 3 a ~ 3f are described in detail cleaning method of the present invention.
First, carry out step 21: pass into the first process gas and rinse air admission unit, at least part of byproduct of reaction of air admission unit inwall is peeled off.
Please refer to Fig. 3 a, when reaction cavity service time is longer, the inwall of cavity 30 and air admission unit 31 all attached to one deck chlorine silicon oxide layer 32, in the present embodiment, and chlorine Si oxide SiO
xcl
yfor etch by-products.This layer of chlorine silicon oxide layer 32 can affect uniformity and the stability of follow-up plasma etch process, chlorine silicon oxide layer 32 particularly accompanying by air admission unit 31 inwall, probably directly causes wafer defect if be not only difficult to cleaning and drop in plasma etch process.
Please continue to refer to Fig. 3 b, in order to the chlorine silicon oxide layer 32 accompanying by air admission unit 31 inwall thoroughly can be removed, first pass into the first process gas with atmospheric flow in the present embodiment and rinse air admission unit, now keep reaction cavity internal gas pressure to be low pressure.Concrete, in this step, the flow of the first process gas, for being more than or equal to 500sccm, keeps the valve wide open of the control valve be connected with pumping cells, makes the air pressure of reaction cavity maintain low vacuum pressure, is preferably close to 0 millitorr.Under pumping cells effect, mass air flow is from air admission unit 31 fast undershoot, and at least part of byproduct of reaction of air admission unit 31 inwall can be taken away along with large discharge gas.Preferably, the inwall of air admission unit can be rinsed repeatedly, as being at least rinsed 5 times.Namely " pass into large discharge first process gas and standard-sized sheet control valve valve---stop pass into the first process gas and close control valve valve " this process can repeat repeatedly.Wherein, the first process gas can be any gas meeting actual process demand, and the present invention is not limited it.As known from the above, this step can make the most of chlorine silicon oxide layer 32 being deposited in air admission unit inwall drop under large discharge gas fast flush, decreases the pollution sources causing wafer defect.
Then, carry out step 22, pass into the second process gas and form the plasma of the second process gas, the reaction by-products of the plasma making the second process gas and the byproduct of reaction peeled off and reaction cavity inwall is with the inwall of cleaning reaction cavity.
Please refer to Fig. 3 c, peeled off from the inwall of air admission unit 31 by the chlorine silicon oxide layer 32 that the first process gas washes away and drop in reaction cavity, as miscellaneous part (as electrostatic chuck) surface in reaction cavity inwall or reaction cavity on the chlorine silicon oxide layer 32 that formed, now to pass into the second fluorine-containing process gas compared with low discharge as NF
3and ionized as F-plasma, F-plasma and SiO
xcl
yin Si reaction generate SiF
4deng gaseous product, can be taken away by pumping cells, so reach the object of the inwall of cleaning reaction cavity.For avoiding NF
3gas taken away fast cannot fully and byproduct of reaction react, in this step, control and regulation valve opening is half-open, reduces NF in reaction cavity 30
3the suction performance of gas, makes NF in reaction cavity
3tolerance and pressure increase.So, the time of staying of F-plasma in cavity is longer.Preferably, NF in reaction cavity 30
3the pressure of gas remains and is less than or equal to 10 millitorrs, NF
3the flow of gas is for being less than or equal to 50sccm.
Then, carry out step 23, increase the pressure of the second process gas, to make in the plasma of the second process gas and air admission unit unpeeled reaction by-products to clean the inwall of air admission unit.
As shown in Figure 3 e, although the NF passed in step 22
3the byproduct of reaction that gas eliminates cavity inner wall and the partial reaction accessory substance peeled off from air admission unit, but cannot thoroughly to remove in air admission unit not by byproduct of reaction that the first process gas washes away.Therefore, in this step, strengthen the air pressure in reaction cavity 30 further, in cavity, produce more NF
3the plasma of gas.Concrete, the valve opening of control and regulation valve is to regulate the pressure in reaction cavity close to full cut-off.In this step, the NF passed into
3gas still remain low discharge, as being less than or equal to 50sccm, then the undershoot speed in air admission unit 31 still remains less, and because valve opening is close to full cut-off, NF
3the plasma of gas can not be taken away fast, and the time reacted with the byproduct of reaction of air admission unit 31 inwall is extended.On the other hand, the closed of control valve valve makes the plasma of in reaction cavity 30 diffusion motion in cavity, also has part F-plasma and upwards enters air admission unit 31.Therefore, not only extend the time of staying of F-plasma in reaction cavity, more utilize the reflux characteristic of F-plasma under elevated pressures in reaction cavity 30, add the etching reaction to the unpeeled byproduct of reaction of air admission unit above chamber central 31 inwall, the byproduct of reaction SiO at dead angle in air admission unit can be removed thus
xcl
y, as illustrated in figure 3f.Preferably, NF
3the pressure of gas remains and is more than or equal to 60 millitorrs.
As known from the above, the present embodiment makes the etching sediment in air admission unit peel off fast by the air scour step increasing low-pressure high flow capacity, removes defect source; Again by increasing cavity reaction gases NF
3pressure further cavity inner wall and air admission unit inwall are cleaned, particularly utilize the intake method of high pressure low discharge to air admission unit inner wall washing, effectively improve byproduct of reaction SiO
xcl
yelimination efficiency, thus reduce the generation of crystal circle center agglomerated defect, promote the yield of wafer.
As a rule, the accessory substance produced in plasma etching allied processes is except SiO
xcl
youtside, also comprise carbon compound.Therefore the cavity cleaning method of plasma etching apparatus of the present invention also comprises the cleaning of the carbon compound layer to cavity inner wall.Specifically, after carrying out above steps, then O is passed in reaction cavity
2gas, and ionization forms oxygen plasma, reacts generate CO or CO with the C in carbon compound
2taken away by pumping cells Deng after gaseous product, so can byproduct of reaction thoroughly clean in realization response cavity.In another preferred embodiment of the present invention, complete SiO
xcl
yafter the cleaning of carbon compound layer, the method for chemical vapour deposition (CVD) is used to regrow on reaction cavity inwall SiO
xcl
ylayer, for cavity atmosphere during stable plasma etching wafer.
In sum, cavity cleaning method of the present invention first uses low vacuum pressure, large discharge gas rinses repeatedly to cavity, peel off most of etch by-products of air admission unit inwall, re-use comparatively low vacuum pressure, the plasma of low discharge process gas cleans the etch by-products peeling off and be deposited on cavity inner wall simultaneously, the last cavity internal pressure that again increases utilizes the reflux characteristic of this plasma under high vacuum pressure to extend the time of staying of plasma in reaction cavity, increase the etching reaction to accessory substance in air admission unit inwall, remove the etch by-products at dead angle, finally reach accessory substance when reducing wafer etching to drop risk, optimize the object of crystal circle center's agglomerated defect, and cleaning method of the present invention realizes simply with low cost.
Although the present invention discloses as above with preferred embodiment; right described many embodiments are citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection domain that the present invention advocates should be as the criterion with described in claims.
Claims (9)
1. a cavity cleaning method for plasma etching apparatus, described plasma etching apparatus comprises reaction cavity, air admission unit and pumping cells, and described cavity cleaning method comprises:
Step 1: pass into the first process gas and rinse described air admission unit, makes at least part of byproduct of reaction of described air admission unit inwall peel off;
Step 2: pass into the second process gas and form the plasma of described second process gas, the reaction by-products of the plasma making described second process gas and the byproduct of reaction peeled off and described reaction cavity inwall is to clean the inwall of described reaction cavity, the gas flow of wherein said first process gas is greater than the gas flow of described second process gas, and the pressure of described first process gas is less than the pressure of described second process gas; And
Step 3: the pressure increasing described second process gas, to make in the plasma of described second process gas and described air admission unit unpeeled reaction by-products to clean the inwall of described air admission unit.
2. cavity cleaning method according to claim 1, is characterized in that, described byproduct of reaction is SiO
xcl
y, described second process gas is NF
3.
3. cavity cleaning method according to claim 1, is characterized in that, passes into the number of times that described first process gas rinses described air admission unit and be more than or equal to 5 times in step 1.
4. cavity cleaning method according to claim 1, is characterized in that, the gas flow of described first process gas is for being more than or equal to 500sccm; The pressure of the second process gas described in step 2 is for being less than or equal to 10 millitorrs, and gas flow is for being less than or equal to 50sccm.
5. cavity cleaning method according to claim 4, is characterized in that, the pressure of the second process gas described in step 3 is for being more than or equal to 60 millitorrs, and gas flow is for being less than or equal to 50sccm.
6. cavity cleaning method according to claim 2, is characterized in that, also comprises passing into oxygen and being ionized forming plasma, to clean the step of the carbonaceous by-products in described reaction cavity.
7. cavity cleaning method according to claim 2, is characterized in that, also comprises by the grown on interior walls one deck SiO of chemical vapour deposition (CVD) at described reaction cavity
xcl
ystep.
8. cavity cleaning method according to claim 1, is characterized in that, described air admission unit is arranged at described reaction cavity top and is positioned at directly over wafer to be etched.
9. the cavity cleaning method according to any one of claim 1 ~ 8, it is characterized in that, described pumping cells is connected with described reaction cavity by control valve, by controlling the aperture of described control valve to regulate the air pressure in described reaction cavity in each step of described cleaning method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410127005.0A CN103962353B (en) | 2014-03-31 | 2014-03-31 | The cavity cleaning method of plasma etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410127005.0A CN103962353B (en) | 2014-03-31 | 2014-03-31 | The cavity cleaning method of plasma etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103962353A CN103962353A (en) | 2014-08-06 |
| CN103962353B true CN103962353B (en) | 2016-03-02 |
Family
ID=51232634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410127005.0A Active CN103962353B (en) | 2014-03-31 | 2014-03-31 | The cavity cleaning method of plasma etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103962353B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867815B (en) * | 2015-04-29 | 2018-01-26 | 上海华力微电子有限公司 | A kind of clean method of etching reaction cavity |
| CN106373851B (en) * | 2016-10-24 | 2018-06-26 | 上海华力微电子有限公司 | A kind of method for optimizing wafer ring-type defect |
| CN106449345B (en) * | 2016-11-09 | 2018-08-28 | 上海华力微电子有限公司 | A kind of etching cavity that extends is begun to speak the maintenance method at service time interval |
| CN106840820B (en) * | 2016-11-29 | 2020-10-23 | 信利（惠州）智能显示有限公司 | CVD film and etching treatment method thereof |
| CN106967961A (en) * | 2017-04-14 | 2017-07-21 | 王宏兴 | A kind of method of removal CVD reaction cavity inwall deposition films |
| CN111211065A (en) * | 2018-11-22 | 2020-05-29 | 长鑫存储技术有限公司 | Cleaning method of semiconductor production equipment and semiconductor process method |
| CN110600364B (en) * | 2019-09-20 | 2022-04-15 | 武汉新芯集成电路制造有限公司 | Method for improving defects in wafer edge etching machine |
| CN110610845A (en) * | 2019-09-27 | 2019-12-24 | 扬州扬杰电子科技股份有限公司 | Method for cleaning groove etching cavity of P5000 machine |
| CN111883411B (en) * | 2020-08-28 | 2023-02-03 | 上海华力微电子有限公司 | Method for improving etching residue of through hole |
| CN114308947A (en) * | 2020-09-30 | 2022-04-12 | 中国科学院微电子研究所 | Cleaning method and cleaning device for polycrystalline silicon production equipment and polycrystalline silicon production equipment |
| CN115318755B (en) * | 2021-05-10 | 2024-04-12 | 中国科学院微电子研究所 | Cleaning method of plasma doping process chamber |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW473803B (en) * | 2000-01-31 | 2002-01-21 | Applied Materials Inc | Method and apparatus for enhanced chamber cleaning |
| CN1724706A (en) * | 2004-07-23 | 2006-01-25 | 气体产品与化学公司 | Method for enhancing fluorine utilization |
| CN1813342A (en) * | 2003-06-27 | 2006-08-02 | 东京毅力科创株式会社 | Method for generating plasma, method for cleaning and method for treating substrate |
| CN101278072A (en) * | 2005-08-02 | 2008-10-01 | 麻省理工学院 | Method of using NF3 for removing surface deposits |
| CN101796215A (en) * | 2007-07-17 | 2010-08-04 | 应用材料股份有限公司 | Clean rate improvement by pressure controlled remote plasma source |
| CN102553867A (en) * | 2012-02-17 | 2012-07-11 | 上海先进半导体制造股份有限公司 | Dry cleaning method for reaction chamber of plasma etching equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5179219B2 (en) * | 2008-02-20 | 2013-04-10 | 東京エレクトロン株式会社 | Deposit removal method and substrate processing method |
| JP2010199475A (en) * | 2009-02-27 | 2010-09-09 | Tokyo Electron Ltd | Cleaning method of plasma processing apparatus and storage medium |
-
2014
- 2014-03-31 CN CN201410127005.0A patent/CN103962353B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW473803B (en) * | 2000-01-31 | 2002-01-21 | Applied Materials Inc | Method and apparatus for enhanced chamber cleaning |
| CN1813342A (en) * | 2003-06-27 | 2006-08-02 | 东京毅力科创株式会社 | Method for generating plasma, method for cleaning and method for treating substrate |
| CN1724706A (en) * | 2004-07-23 | 2006-01-25 | 气体产品与化学公司 | Method for enhancing fluorine utilization |
| CN101278072A (en) * | 2005-08-02 | 2008-10-01 | 麻省理工学院 | Method of using NF3 for removing surface deposits |
| CN101796215A (en) * | 2007-07-17 | 2010-08-04 | 应用材料股份有限公司 | Clean rate improvement by pressure controlled remote plasma source |
| CN102553867A (en) * | 2012-02-17 | 2012-07-11 | 上海先进半导体制造股份有限公司 | Dry cleaning method for reaction chamber of plasma etching equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103962353A (en) | 2014-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103962353B (en) | The cavity cleaning method of plasma etching apparatus | |
| CN104867815B (en) | A kind of clean method of etching reaction cavity | |
| KR101764166B1 (en) | Silicon-selective dry etch for carbon-containing films | |
| US5882424A (en) | Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field | |
| US9666414B2 (en) | Process chamber for etching low k and other dielectric films | |
| CN104882360B (en) | Cleaning method of plasma processing apparatus | |
| CN100555571C (en) | CVD equipment and use described CVD equipment to clean the method for described CVD equipment | |
| TW201733697A (en) | Systems and methods for eliminating fluorine residue in a substrate processing chamber using a plasma-based process | |
| CN106298446B (en) | Method for cleaning plasma processing chamber and substrate | |
| JP2014506397A (en) | Uniform dry etching in two stages | |
| JP2006148095A (en) | Cleaning of sulfur hexafluoride remote plasma source | |
| CN100385623C (en) | CVD apparatus and method of cleaning the CVD apparatus | |
| CN101214487B (en) | Method for cleaning cavity of semiconductor etching equipment | |
| CN107731677B (en) | Method for processing object to be processed | |
| JP2008078678A (en) | Method for processing plasma | |
| US20080057726A1 (en) | Apparatus and method for fabricating semiconductor device and removing by-products | |
| TWI650813B (en) | Plasma processing method | |
| CN109868458A (en) | A kind of cleaning system and cleaning method of semiconductor equipment | |
| JP4845269B2 (en) | Semiconductor wafer processing system, computer readable medium, and semiconductor process chamber cleaning method | |
| WO2007015050A8 (en) | A method of processing substrates | |
| JP5888674B2 (en) | Etching apparatus, etching method and cleaning apparatus | |
| JP2002060951A (en) | Gas reaction to eliminate contaminant in cvd chamber | |
| US6545245B2 (en) | Method for dry cleaning metal etching chamber | |
| JPH1140502A (en) | Method for dry-cleaning semiconductor manufacturing apparatus | |
| JP2008283217A (en) | Processing apparatus, and cleaning method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |