CN106840820B - CVD film and etching treatment method thereof - Google Patents
CVD film and etching treatment method thereof Download PDFInfo
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- CN106840820B CN106840820B CN201611079865.7A CN201611079865A CN106840820B CN 106840820 B CN106840820 B CN 106840820B CN 201611079865 A CN201611079865 A CN 201611079865A CN 106840820 B CN106840820 B CN 106840820B
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
Abstract
The invention provides a CVD film and an etching processing method thereof, wherein the etching processing method comprises the following steps: introducing an ignition medium into a CVD chamber and igniting, wherein a CVD film is placed in the CVD chamber; and introducing etching gas into the CVD chamber, and etching the CVD film by using the plasma of the etching gas. According to the CVD film and the etching processing method thereof, the CVD film is etched by introducing the etching gas into the CVD chamber, so that the film forming and etching of the film can be realized through the CVD equipment, the circulation times of products among different posts are reduced, and the production efficiency can be improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a CVD film and an etching treatment method thereof.
Background
In the manufacturing process of a display device such as a TFT (Thin film transistor), a PECVD (Plasma Enhanced Chemical Vapor Deposition) is an indispensable film forming process. In the industrial production process, the quality of the CVD film layer needs to be detected so as to find the quality problem of the product and adjust the process parameters in time. Besides the film thickness, refractive index and film forming rate, the etching rate of the film is one of the criteria for judging whether the film layer is qualified or not. The current etching rate test methods mainly comprise the following two methods:
one method is that a sample to be tested is made into patterns through photoetching, dry etching and stripping processes, and a step difference instrument is used for testing the step difference between the patterns, so that the etched amount is reflected, and the etching rate is calculated; the method needs a plurality of posts for matching test, the test is time-consuming, the generally set test period is longer, and the monitoring is difficult.
The other method is that after the film thickness is tested by an ellipsometer in advance, wet etching is used, the film layer is etched under the condition of incomplete etching, then the film thickness is tested again, and the difference between the two is compared to give a result; the method has high requirement on the uniformity of wet etching, cannot obtain the data of the uniformity of the film quality, and also needs the coordination of other stations.
Therefore, the existing film etching rate testing method needs to enable the CVD film to flow at a plurality of positions when the CVD film is etched, and is not beneficial to industrial production.
Disclosure of Invention
In view of the above, it is desirable to provide a CVD thin film and an etching method thereof, which can realize film formation and etching of the CVD thin film by a CVD apparatus and improve production efficiency.
The invention discloses an etching treatment method of a CVD film, which comprises the following steps:
introducing an ignition medium into a CVD chamber and igniting, wherein a CVD film is placed in the CVD chamber;
and introducing etching gas into the CVD chamber, and etching the CVD film by using the plasma of the etching gas.
As one embodiment, after the etching gas is introduced into the CVD chamber and before the CVD film is etched by the plasma of the etching gas, the etching method further includes:
and adjusting the power of the CVD equipment, the gas pressure of the CVD chamber and the distance between the bedplate and the diffuser to enable the plasma of the etching gas to form a preset shape.
As one embodiment, after etching the CVD thin film by the plasma of the etching gas, the etching method further includes:
pumping out the etching gas;
according to the material of the CVD film, filling gas with corresponding empty valence bonds is introduced into the CVD chamber;
and ionizing the vacancy key filling gas into plasma so as to fill the vacancy keys on the surface of the CVD film.
As one embodiment, before the ignition medium is introduced into the CVD chamber and ignited, the etching processing method further includes:
cleaning the CVD chamber.
As one embodiment, before the ignition medium is introduced into the CVD chamber and ignited, the etching processing method further includes: measuring a first film thickness of the CVD film;
after etching the CVD film by the plasma of the etching gas, the etching processing method further includes:
and calculating the etching rate of the CVD film according to the first film thickness and the etching parameters.
As one of the embodiments, the CVD film is a silicon nitride compound film;
calculating the etching rate of the CVD film according to the first film thickness and the etching parameters, wherein the method comprises the following steps:
detecting an etching end point and obtaining a first etching duration;
and calculating the etching rate of the CVD film according to the first film thickness and the etching duration.
As one embodiment, the calculating the etching rate of the CVD thin film according to the first film thickness and the etching parameter includes:
acquiring a second etching duration;
measuring the second film thickness of the etched CVD film;
and calculating the etching rate of the CVD film according to the etching duration and the difference between the first film thickness and the second film thickness.
As one embodiment, the first film thickness is the average value of the film thicknesses of a plurality of sampling points in the CVD film before etching;
the second film thickness is the film thickness average value of the plurality of sampling points after etching.
In one embodiment, the measuring the first film thickness of the CVD thin film is: measuring a first film thickness of a plurality of sampling points in the CVD film;
and measuring the second film thickness of the etched CVD film, wherein the second film thickness is as follows: measuring the second film thickness of the plurality of sampling points after etching;
as one implementation mode, calculating the etching amount of each sampling point, wherein the etching amount is the difference between the first film thickness and the second film thickness;
and evaluating the etching uniformity of the CVD film according to the etching amount of each sampling point.
The invention also discloses a CVD film which is obtained by adopting the etching treatment method.
According to the CVD film and the etching processing method thereof, the CVD film is etched by introducing the etching gas into the CVD chamber, so that the film forming and etching of the film can be realized through the CVD equipment, the circulation times of products among different posts are reduced, and the production efficiency can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings of the embodiments can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic flow chart illustrating a CVD film etching method according to an embodiment;
FIG. 2 is a schematic flow chart illustrating a method for etching a CVD film according to another embodiment;
FIG. 3 is a schematic flow chart showing a CVD film etching method according to still another embodiment;
FIG. 4 is a schematic flowchart of a CVD film etching method according to still another embodiment;
FIG. 5 is a schematic diagram illustrating an end point detection principle of the nitrogen silicon compound thin film etching according to an embodiment;
FIG. 6 is a diagram illustrating the effect of etching a CVD film by oval plasma according to an embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
For example, the method for etching a CVD film of an embodiment includes: introducing an ignition medium into a CVD chamber and igniting, wherein a CVD film is placed in the CVD chamber; and introducing etching gas into the CVD chamber, and etching the CVD film by using the plasma of the etching gas. For another example, a CVD film of an embodiment is processed by the above etching process.
In order to further understand the above CVD film and the etching processing method thereof, the CVD film and the etching processing method thereof according to the embodiments of the present invention will be described below with reference to the accompanying drawings.
For example, please refer to fig. 1, which is a flowchart illustrating a CVD film etching method according to an embodiment. As shown in fig. 1, the method for etching a CVD film includes the following steps:
and S120, introducing an ignition medium into the CVD chamber and igniting, wherein the CVD chamber is provided with a CVD film.
For example, argon (Ar) is introduced into the CVD chamber and used as an ignition medium for the CVD equipment. At lower power, some gases are difficult to form into a plasma and ignition aids in forming the plasma.
Wherein a CVD film is disposed within the CVD chamber prior to ignition. The CVD film is a film deposited by a CVD apparatus. For example, the CVD film is a buffer layer film or an insulating layer film. As another example, the CVD film is an oxide film, a nitride film, a silicide film, a metal oxide semiconductor film, or the like. As another example, the CVD film is silicon nitride (SiN)x) Thin film, silicon oxide (SiO)x) Thin film, amorphous silicon(a-Si) thin films, and the like.
S140, introducing etching gas into the CVD chamber, and etching the CVD film through the plasma of the etching gas.
Specifically, after etching gas is introduced into the CVD chamber, the CVD equipment is set to load certain power, the etching gas is ionized into plasma, and the activity of the plasma is utilized to react with the CVD film, so that the CVD film is etched.
Wherein the etching gas used may be the same or different for different CVD films. For example, for a-Si, SiNx、SiOxThe silicon-containing film is etched by using etching gas capable of ionizing fluorine ions to ensure that the fluorine ions and the silicon are subjected to chemical reaction F-+Si→SiF4And ×) to generate silicon tetrafluoride gas, thereby realizing the etching of the silicon-containing film. For example, the etching gas capable of ionizing fluorine ions is nitrogen trifluoride (NF)3). In another example, considering the strong reactivity of fluorine ions with silicon, the power of the CVD apparatus is set to be lower than the rated power in order to control the etching rate, for example, the power can be as low as 250W in the case of a 4.5G CVD apparatus.
According to the CVD film etching processing method, the CVD film is etched by introducing the etching gas into the CVD chamber, so that film forming and etching of the film can be realized through the CVD equipment, the circulation times of products among different posts are reduced, and the production efficiency can be improved.
In one embodiment, in order to improve the etching quality, before step S120, the following steps are further performed: cleaning the CVD chamber. For example, an RPSC (Remote Plasma Source Cleaning) operation is performed, i.e., the CVD chamber is cleaned using a Remote Plasma Source. As another example, fluorine ions are formed during RPSC operation to clean the interior walls of a CVD chamber.
In one embodiment, when the etching gas forms plasma in the chamber, the shape of the plasma is different, and the etching amount of the plasma is different for each point of the CVD film, and the uniformity of the CVD film can be improved by adjusting the shape of the plasma and purposefully changing the etching amount of each point. For example, in order to improve the uniformity of the CVD film, after the etching gas is introduced into the CVD chamber and before the CVD film is etched by the plasma of the etching gas, the following steps are further performed: and adjusting the power of the CVD equipment, the gas pressure of the CVD chamber and the distance between the bedplate and the diffuser to enable the plasma of the etching gas to form a preset shape. For example, it has been found through experiments that the etching amount of the plasma having a thick middle and a thin periphery, such as an oval shape or a cloud shape, is smaller for both sides of the CVD film than for the middle, so that the etching amount of both sides of the CVD film can be as small as several tens of angstroms. Thus, as shown in fig. 6, for a thin film with a thick middle and thin two sides, the plasma 63 of the etching gas can be made elliptical by adjusting the power of the CVD equipment, the gas pressure of the CVD chamber 60 and the distance between the platen 61 and the diffuser 62, so that the etched CVD thin film 64 can be made more flat, thereby improving the uniformity of the CVD thin film. For example, when the power of the CVD apparatus is 350W to 500W, the pressure is 1000mtorr to 1450mtorr, and the distance between the platen 61 and the diffuser 62 is 500mil to 750mil, the plasma 63 of the etching gas can be formed to have a shape with a thickness in the middle and a thickness in the periphery. For another example, when the power of the CVD apparatus is 450W, the gas pressure is 1200mtorr, and the distance between the platen 61 and the diffuser 62 is 600mil, the plasma 63 of the etching gas can be formed in an elliptical shape.
In one embodiment, in order to obtain reasonable etching process parameters, the existing process with better etching uniformity is adopted to etch a CVD film sample, and the etching amount of N sampling points in the etched CVD film is measured and recorded as W1、W2……WN(ii) a Etching the same CVD film sample by adopting the etching treatment method, measuring the etching amount of the same N sampling points in the etched CVD film, and marking as C1、C2……CN(ii) a Adjusting the process parameters of the etching method, such as the power of the CVD apparatus, the pressure of the CVD chamber, the distance between the platen and the diffuser, etc., when C1、C2……CNAnd W1、W2……WNWhen the uniformity is infinitely close to the target value, the process parameters of the etching treatment method are madeIs a reference process parameter in actual production to ensure the etching uniformity. For example, when C1And W1Difference of difference, C2And W2Difference of difference, CNAnd WNWhen the differences are all smaller than a first preset threshold value, C is considered to be1、C2……CNAnd W1、W2……WNAnd an infinite approach. As another example, when C1And W1Difference of difference, C2And W2Difference of difference, CNAnd WNWhen the average value of the difference is less than a second preset threshold value, considering C1、C2……CNAnd W1、W2……WNAnd an infinite approach. As another example, when C1、C2……CNVariance/standard deviation of and W1、W2……WNIs less than a third preset threshold, C is considered to be1、C2……CNAnd W1、W2……WNIs infinitely close to uniform.
And N is a positive integer, and the larger the value of N is, the more accurate the measurement of the etching amount is. For example, N-25. For example, in order to improve the measurement accuracy, N-30, N-36, N-42, N-49, and the like are taken. For example, in order to reduce the number of measurements and improve the efficiency, N is 20, N is 16, N is 15, N is 9, and the like.
In one embodiment, in order to stabilize the surface properties of the CVD film and enable accurate measurement values to be obtained when the CVD film is detected, after etching the CVD film, as shown in fig. 2, the following steps are further performed:
s150, exhausting the etching gas.
And S160, introducing corresponding empty bond filling gas into the CVD chamber according to the material of the CVD film.
S170, ionizing the vacancy key filling gas into plasma so as to fill the vacancy keys on the surface of the CVD film.
Specifically, different vacancy bonds are used to fill the gas for different CVD films, depending on the material properties of the CVD films. For example, for SiOxFilm of NO2As space-price key fillerMake up gas for SiNxFilm of NH3As a void-bond filling gas, H is used for the a-Si thin film2Filling gas as an empty price key.
In this embodiment, the CVD apparatus is applied with a predetermined power to ionize the vacancy-bond filling gas into plasma, and the plasma of the vacancy-bond filling gas is used to fill the vacancy bonds on the surface of the CVD thin film, thereby stabilizing the surface properties of the CVD thin film and making it less likely to change. Therefore, when the film thickness detection or uniformity detection is carried out on the CVD film subsequently, the measurement result is more accurate.
In one embodiment, in order to eliminate the static electricity on the substrate on which the CVD film is disposed and reduce the probability of chipping, after step S140 or step S170, the following steps are further performed: pumping out empty price keys and filling gas; and introducing preset gas into the CVD chamber, changing the distance between the bedplate and the diffuser in the CVD chamber, ionizing the preset gas into plasma, and eliminating the static electricity of the substrate by using the plasma. The predetermined gas is any gas that does not chemically react with the CVD film, such as hydrogen.
For another example, in order to simplify the process flow, after step S170, the plasma of the vacancy-bond filling gas is continuously used to eliminate the substrate static electricity. That is, after the vacancy bonds on the surface of the CVD thin film are filled, the vacancy bond filling gas is continuously introduced and ionized, and the substrate static electricity is removed by the plasma of the vacancy bond filling gas.
In one embodiment, in order to evaluate the denseness of the CVD film, it is necessary to examine the etching rate of the CVD film. At this time, as shown in fig. 3, before step S120, step S110 is further performed to measure a first film thickness of the CVD thin film; after step S140 or S170, or after eliminating the static electricity of the substrate on which the CVD film is located, step S180 is further performed, and the etching rate of the CVD film is calculated according to the first film thickness and the etching parameter.
For example, the CVD film is a nitrogen silicon compound film such as SiNxA film for detecting the end of etching of the silicon nitride film by using the phenomenon of sudden increase of air pressure in the CVD chamber after the silicon nitride film is etched as shown in FIG. 5And obtaining a first etching duration, wherein the etching end point refers to a time point at which the etching is finished, such as a time point t shown in fig. 51. For example, the timing is started from the etching start time, and the timing is stopped when the sudden increase of the air pressure in the CVD chamber is detected, wherein the timing duration is the first etching duration. And calculating the etching rate of the CVD film according to the first film thickness and the etching duration. For another example, before etching, the average film thickness of the CVD film, i.e., the first film thickness, is measured as T, when the silicon nitride film on the substrate is completely etched, the etching is automatically stopped, and the first etching duration S can be obtained by the data storage of the CVD apparatus, so as to calculate the etching rate
For another example, step S180 includes the following steps: acquiring a second etching duration; measuring the second film thickness of the etched CVD film; and calculating the etching rate of the CVD film according to the etching duration and the difference between the first film thickness and the second film thickness.
For example, the second etching period is an etching period set before etching. For another example, the second etching duration is an etching duration counted by the CVD apparatus after etching.
In one embodiment, in consideration of the difference in thickness at each point in the CVD thin film, in order to improve the accuracy of the detection of the etching rate, the film thicknesses at a plurality of sampling points in the CVD thin film are measured before and after etching, respectively, and the average value thereof is taken as the first film thickness or the second film thickness. For example, before etching, a plurality of sampling points are selected from the CVD film, the film thickness of the plurality of sampling points is measured, and the average value is taken as the first film thickness; and after etching, measuring the film thicknesses of the plurality of sampling points again, and taking the average value as the second film thickness. In another example, a film thickness tester is used to measure the thickness of the first film and the thickness of the second film. Wherein the film thickness is the thickness of the CVD film.
For example, the first film thickness is T1The second film thickness is T2The second etching duration is S2Then the etching rate of the CVD film is
In one embodiment, after step S140 or step S170 or step S180, the following steps are also performed: the etching uniformity of the CVD film was evaluated.
For example, as shown in fig. 4, step S110 specifically includes: step S111, measuring the first film thickness of a plurality of sampling points in the CVD film; when measuring the second film thickness of the CVD film after etching, the method specifically comprises the following steps: step S181, measuring the second film thickness of the plurality of sampling points after etching; evaluating the etching uniformity of the CVD film, comprising the following steps:
s191, calculating the etching amount of each sampling point, wherein the etching amount is the difference between the first film thickness and the second film thickness. For example, for a certain sampling point, the etching amount of the sampling point is the difference between the first film thickness and the second film thickness of the sampling point; therefore, the etching amount of a plurality of sampling points is obtained.
And S192, evaluating the etching uniformity of the CVD film according to the etching amount of each sampling point.
For example, the variance or standard deviation of the etching amount at each of the sampling points is calculated, and the smaller the variance or standard deviation is, the better the etching uniformity of the CVD film is. For another example, a plurality of uniformity levels and corresponding variance/standard deviation ranges are divided in advance, and the etching uniformity level of the CVD film is determined according to the calculated variance or standard deviation range.
According to the etching treatment method of the CVD film, the etching process is carried out on the CVD equipment, so that the etching uniformity of the CVD film is easy to test, and the testing efficiency of the etching rate is improved; furthermore, communication obstacles among different posts during testing the etching rate can be reduced, the testing time of the etching rate can be shortened, the etching rate can be used as a conventional quality control project to monitor, and the quality of the CVD film layer can be ensured. In addition, by manufacturing special samples and processes, the uniformity of the film quality of the CVD film can be evaluated, and the film thickness uniformity can be improved.
The embodiment of the invention also discloses a CVD film which is obtained by processing the CVD film by adopting the etching processing method in any embodiment.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A CVD film etching processing method is characterized by comprising the following steps:
introducing argon (Ar) into a CVD chamber, taking the argon as an ignition medium of CVD equipment and igniting, wherein a CVD film is placed in the CVD chamber;
introducing etching gas into the CVD chamber, and etching the CVD film by using the plasma of the etching gas;
wherein after the etching the CVD film by the plasma of the etching gas, the etching method further comprises: pumping out the etching gas; according to the material of the CVD film, filling gas with corresponding empty valence bonds is introduced into the CVD chamber; and ionizing the vacancy key filling gas into plasma so as to fill the vacancy keys on the surface of the CVD film.
2. The etching processing method according to claim 1, wherein the etching processing method for a CVD film further comprises:
etching the CVD film sample by adopting the existing process with better etching uniformity, measuring the etching amount of N sampling points in the etched CVD film, and recording as W1、W2……WN；
Etching the same CVD film sample by adopting the CVD film etching treatment method, measuring the etching amount of the same N sampling points in the etched CVD film, and marking as C1、C2……CN；
Adjusting the technological parameters of the CVD film etching treatment method when C1、C2……CNAnd W1、W2……WNInfinite proximity, or C1、C2……CNAnd W1、W2……WNWhen the uniformity of the CVD film is infinitely close to each other, the process parameters of the etching processing method of the CVD film are taken as reference process parameters in actual production,
wherein, when C1And W1Difference of difference, C2And W2Difference of difference, CNAnd WNWhen the difference is less than the first preset threshold value, or when C1And W1Difference of difference, C2And W2Difference of difference, CNAnd WNWhen the average value of the difference is less than a second preset threshold value, considering C1、C2……CNAnd W1、W2……WNInfinite proximity, when C1、C2……CNVariance/standard deviation of and W1、W2……WNIs less than a third preset threshold, C is considered to be1、C2……CNAnd W1、W2……WNThe uniformity of (a) is infinitely close;
after the etching gas is introduced into the CVD chamber and before the CVD film is etched by the plasma of the etching gas, the etching method further comprises the following steps:
and adjusting the power of the CVD equipment, the gas pressure of the CVD chamber and the distance between the bedplate and the diffuser according to the reference process parameters to enable the plasma of the etching gas to form a preset shape, wherein the plasma of the preset shape comprises plasma with thick middle and thin periphery.
3. The etching processing method according to claim 1,
after the etching the CVD film by the plasma of the etching gas or the ionizing the space-valence-bond filling gas into the plasma, the method further comprises the following steps: pumping out empty price keys and filling gas; and introducing preset gas into the CVD chamber, changing the distance between the bedplate and the diffuser in the CVD chamber, ionizing the preset gas into plasma, and eliminating the static electricity of the substrate by using the plasma, wherein the preset gas is any gas which does not generate chemical reaction with the CVD film.
4. The etch processing method of claim 1, wherein prior to introducing the ignition medium into the CVD chamber and igniting, the etch processing method further comprises:
cleaning the CVD chamber.
5. The etch processing method of claim 1, wherein prior to introducing the ignition medium into the CVD chamber and igniting, the etch processing method further comprises: measuring a first film thickness of the CVD film;
after etching the CVD film by the plasma of the etching gas, the etching processing method further includes:
and calculating the etching rate of the CVD film according to the first film thickness and the etching parameters.
6. The etching processing method according to claim 5, wherein the CVD film is a nitrogen silicon compound film;
calculating the etching rate of the CVD film according to the first film thickness and the etching parameters, wherein the method comprises the following steps:
detecting an etching end point and obtaining a first etching duration;
and calculating the etching rate of the CVD film according to the first film thickness and the etching duration.
7. The etching processing method according to claim 5, wherein calculating the etching rate of the CVD film based on the first film thickness and the etching parameter comprises:
acquiring a second etching duration;
measuring the second film thickness of the etched CVD film;
and calculating the etching rate of the CVD film according to the etching duration and the difference between the first film thickness and the second film thickness.
8. The etching processing method according to claim 7,
the first film thickness is the film thickness average value of a plurality of sampling points in the CVD film before etching;
the second film thickness is the film thickness average value of the plurality of sampling points after etching.
9. The etching processing method according to claim 7,
the first film thickness of the CVD film is measured as follows: measuring a first film thickness of a plurality of sampling points in the CVD film;
and measuring the second film thickness of the etched CVD film, wherein the second film thickness is as follows: measuring the second film thickness of the plurality of sampling points after etching;
the etching processing method further comprises the following steps:
calculating the etching amount of each sampling point, wherein the etching amount is the difference between the first film thickness and the second film thickness;
and evaluating the etching uniformity of the CVD film according to the etching amount of each sampling point.
10. A CVD film obtained by processing by the etching treatment method according to any one of claims 1 to 9.
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