CN115132570B - Processing method and device for semiconductor structure - Google Patents

Processing method and device for semiconductor structure Download PDF

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CN115132570B
CN115132570B CN202211064639.7A CN202211064639A CN115132570B CN 115132570 B CN115132570 B CN 115132570B CN 202211064639 A CN202211064639 A CN 202211064639A CN 115132570 B CN115132570 B CN 115132570B
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gas
thickness
oxide layer
flow
natural oxidation
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CN115132570A (en
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王卫静
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Changxin Technology Group Co.,Ltd.
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Innotron Memory Co ltd
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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    • H01J2237/334—Etching

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Abstract

The embodiment of the disclosure relates to the field of semiconductors, and discloses a method and a device for processing a semiconductor structure, wherein the method comprises the following steps: providing a substrate; a natural oxide layer is formed on the substrate; determining the thickness of a natural oxidation layer; controlling a preset condition according to the thickness of the natural oxidation layer; the preset conditions include: a flow ratio of the first gas to the second gas; under a preset condition, introducing at least one of first gas and second gas into the reaction cavity, reducing the natural oxidation layer into a gaseous by-product, and extracting the gaseous by-product from the reaction cavity, so as to remove the natural oxidation layer; and etching the substrate. The embodiment of the disclosure can reduce the risk of over-etching or under-etching, and improve the yield of integrated circuit products.

Description

Processing method and device for semiconductor structure
Technical Field
The present disclosure relates to the field of semiconductors, and in particular, to a method and an apparatus for processing a semiconductor structure.
Background
With the development of semiconductor technology, the pattern size (pattern dimension) of the Mask Reticle (Mask Reticle) used in the photolithography process is continuously reduced to form smaller devices. Accordingly, the thickness of the photoresist needs to be reduced to control the pattern resolution. Therefore, it is desirable to use a hard mask with high selectivity to reduce the thickness of the barrier layer in high aspect ratio structures.
However, the use of a high-selectivity hard mask means that the etching rate of the hard mask is greatly different from that of other film structures on the substrate, and thus, the hard mask is more susceptible to other factors in the subsequent etching process, which results in over-etching or under-etching.
Disclosure of Invention
In view of this, embodiments of the present disclosure provide a method and an apparatus for processing a semiconductor structure, which can reduce the risk of over-etching or under-etching and improve the yield of integrated circuit products.
The technical scheme of the embodiment of the disclosure is realized as follows:
the embodiment of the disclosure provides a processing method of a semiconductor structure, which includes: providing a substrate; a natural oxide layer is formed on the substrate; determining the thickness of the natural oxidation layer; controlling a preset condition according to the thickness of the natural oxidation layer; the preset conditions include: a flow ratio of the first gas to the second gas; under the preset condition, at least one of the first gas and the second gas is introduced into the reaction cavity, the natural oxidation layer is reduced into a gaseous by-product and is extracted from the reaction cavity, and therefore the natural oxidation layer is removed; and etching the substrate.
In the above solution, the substrate further includes a hard mask, and the native oxide layer is formed on a surface of the hard mask; the determining the thickness of the native oxide layer comprises: determining the waiting time after the hard mask is formed; and determining the thickness of the natural oxidation layer according to the waiting time.
In the above scheme, the first gas is nitrogen, and the second gas is ammonia.
In the foregoing scheme, the controlling the preset condition according to the thickness of the native oxide layer includes: determining the flow ratio of the first gas to the second gas in a preset data curve according to the thickness of the natural oxidation layer; the preset data curve represents that the flow ratio is reduced along with the increase of the thickness of the natural oxidation layer; controlling the flow rate of the first gas and the flow rate of the second gas to satisfy the flow rate ratio.
In the foregoing solution, the determining a flow ratio of the first gas to the second gas includes: determining that the ratio of the flow of the first gas to the flow of the second gas is a first value; the first value is a fixed value in the reduction reaction process of the natural oxidation layer.
In the foregoing solution, the determining a flow ratio of the first gas to the second gas includes: determining that the ratio of the flow of the first gas to the flow of the second gas is a second value; the second value increases with an increase in reduction reaction time of the native oxide layer.
In the above scheme, the material of the hard mask includes: silicon oxynitride and/or silicon nitride; the thickness of the natural oxide layer is less than or equal to 200nm.
In the above scheme, the sum of the flow rate of the first gas and the flow rate of the second gas is greater than or equal to 500sccm and less than or equal to 3000sccm.
In the foregoing solution, the preset condition further includes: the temperature in the reaction chamber; the temperature in the reaction cavity is more than or equal to 200 ℃ and less than or equal to 400 ℃.
In the foregoing solution, the preset condition further includes: the air pressure in the reaction chamber; the pressure in the reaction cavity is more than or equal to 3torr and less than or equal to 7torr.
In the foregoing solution, the preset condition further includes: generating power by radio frequency; the radio frequency generated power is more than or equal to 300W and less than or equal to 800W.
The embodiment of the present disclosure also provides a processing apparatus for a semiconductor structure, including:
the control unit is used for determining the thickness of a natural oxidation layer formed on the substrate and controlling a preset condition according to the thickness of the natural oxidation layer; the preset conditions include: a flow ratio of the first gas to the second gas;
and the reaction chamber is used for introducing at least one of the first gas and the second gas under a preset condition, reducing the natural oxidation layer into a gaseous by-product and pumping out the gaseous by-product so as to remove the natural oxidation layer.
In the above scheme, the substrate further includes a hard mask, and the native oxide layer is formed on a surface of the hard mask; the control unit is also used for determining the waiting time after the hard mask is formed; and determining the thickness of the natural oxidation layer according to the waiting time.
In the above scheme, the first gas is nitrogen, and the second gas is ammonia; the apparatus for processing a semiconductor structure further comprises: a flow controller; the flow controller is arranged at a gas input port of the reaction cavity; the control unit is further configured to store a preset data curve, and determine a flow ratio of the first gas to the second gas in the preset data curve according to the thickness of the native oxide layer; and controlling the flow rate of the first gas and the flow rate of the second gas to meet the flow rate ratio through the flow rate controller.
In the foregoing scheme, the preset condition further includes: generating power by radio frequency; the apparatus for processing a semiconductor structure further comprises: a radio frequency power supply; the radio frequency power supply is electrically connected with the reaction cavity; the control unit is further used for controlling the radio frequency to generate power through the radio frequency power supply.
It can be seen that the embodiments of the present disclosure provide a method and an apparatus for processing a semiconductor structure, where the method includes: providing a substrate; a natural oxide layer is formed on the substrate; determining the thickness of the natural oxidation layer; controlling a preset condition according to the thickness of the natural oxidation layer; the preset conditions include: a flow ratio of the first gas to the second gas; under a preset condition, introducing at least one of first gas and second gas into the reaction cavity, reducing the natural oxidation layer into a gaseous by-product, and extracting the gaseous by-product from the reaction cavity, so as to remove the natural oxidation layer; and etching the substrate. Therefore, the natural oxidation layer is accurately removed under the condition of not influencing the hard mask, the adverse effect of the natural oxidation layer on the etching process is avoided, the risk of over-etching or under-etching is reduced, and the yield of integrated circuit products is improved.
Drawings
FIG. 1 is a schematic diagram of the background art;
fig. 2 is a first flowchart illustrating a method for processing a semiconductor structure according to an embodiment of the present disclosure;
fig. 3 is a first schematic view illustrating an effect of a method for processing a semiconductor structure according to an embodiment of the present disclosure;
fig. 4 is a second effect schematic diagram of a processing method of a semiconductor structure according to an embodiment of the disclosure;
fig. 5 is a third schematic view illustrating an effect of a processing method of a semiconductor structure according to an embodiment of the disclosure;
fig. 6 is a fourth schematic view illustrating an effect of a method for processing a semiconductor structure according to an embodiment of the present disclosure;
fig. 7 is a second flowchart illustrating a method of processing a semiconductor structure according to an embodiment of the disclosure;
fig. 8 is a fifth schematic view illustrating an effect of a processing method of a semiconductor structure according to an embodiment of the disclosure;
fig. 9 is a third schematic flowchart illustrating a method of processing a semiconductor structure according to an embodiment of the present disclosure;
fig. 10 is a sixth schematic view illustrating an effect of a method for processing a semiconductor structure according to an embodiment of the present disclosure;
fig. 11 is a schematic structural diagram of a processing apparatus for a semiconductor structure according to an embodiment of the present disclosure.
Detailed Description
For the purpose of making the purpose, technical solutions and advantages of the present disclosure clearer, the technical solutions of the present disclosure are further elaborated with reference to the drawings and the embodiments, the described embodiments should not be construed as limiting the present disclosure, and all other embodiments obtained by a person of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present disclosure.
In the following description, reference is made to "some embodiments" which describe a subset of all possible embodiments, but it is understood that "some embodiments" may be the same subset or different subsets of all possible embodiments, and may be combined with each other without conflict.
The following description will be added if a similar recitation of "first/second" appears in the specification, and reference is made in the following description to the term "first/second/third" merely to distinguish between similar objects and not to imply a particular ordering with respect to the objects, it being understood that "first/second/third" may, where permissible, be interchanged in a particular order or sequence so that the embodiments of the disclosure described herein can be practiced in other than the order illustrated or described herein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein is for the purpose of describing embodiments of the disclosure only and is not intended to be limiting of the disclosure.
Some terms are explained below.
A hard-mask (HM), which is an inorganic thin film material, is produced by a Chemical Vapor Deposition (CVD) process. Hard masks are used primarily in photolithography processes through which a photoresist image is etch transferred to a substrate.
Critical Dimension (CD), also referred to as minimum feature size, refers to the precision of pattern processing in integrated circuit photomask manufacturing and lithography processes for evaluation and control of the process.
Etch Uniformity (Uniformity), a parameter that measures the Uniformity of the etch process across the wafer.
With the development of semiconductor technology, the size of each device in an integrated circuit is continuously reduced to improve the integration level. Accordingly, the pattern size (pattern dimension) of a Mask Reticle (Mask Reticle) used in the photolithography process also needs to be correspondingly reduced. As pattern dimensions shrink, the thickness of the photoresist (i.e., photoresist) must be correspondingly reduced to control pattern resolution. Therefore, it is desirable to use a hard mask with high selectivity to reduce the thickness of the barrier layer of high aspect ratio structures.
However, the use of the high-selectivity hard mask means that the etching rate of the hard mask is greatly different from that of other film structures on the substrate, and thus, the hard mask is more susceptible to other factors in the subsequent etching process, which results in over-etching or under-etching. Over-etching may cause the semiconductor structure to collapse, and over-etching or under-etching may also cause short circuits or shorts in the circuits formed. On the other hand, over-etching or under-etching can also adversely affect critical dimensions and etch uniformity in integrated circuits.
The factors that adversely affect the etching process include a native oxide (native oxide). After the hard mask is formed, a native oxide layer may be formed to a certain thickness on the hard mask. Due to the high selectivity of the hard mask, the etching rate of the hard mask is greatly different from that of the natural oxide layer, so that the natural oxide layer can generate large interference on the etching of the hard mask. For example, if the etching is performed according to the process parameters corresponding to the hard mask, it is difficult to etch the native oxide layer, so that the area covered by the native oxide layer is not etched sufficiently.
FIG. 1 shows measurements of critical dimensions of integrated circuit products being processed over a period of time, as shown in FIG. 1, the measurements of critical dimensions of the individual integrated circuit products have a discrete distribution that does not converge near a target value due to native oxide effects. Furthermore, some of the measurement values (solid dots in fig. 1) have exceeded the lower limit of the control line (control line). As can be seen from fig. 1, under the influence of the native oxide layer, the critical dimension is difficult to control, which affects the quality of the integrated circuit product.
Fig. 2 is an alternative flow chart of a method for processing a semiconductor structure according to an embodiment of the disclosure, which will be described with reference to the steps shown in fig. 2.
S101, providing a substrate; a native oxide layer is formed on the substrate.
In the embodiment of the present disclosure, the substrate is not limited to a single crystal semiconductor or a polycrystalline semiconductor substrate, and may be an intrinsic single crystal silicon substrate or a lightly doped silicon substrate, and further may be an N-type polycrystalline silicon substrate or a P-type polycrystalline silicon substrate.
In some embodiments of the present disclosure, referring to fig. 3 and 4, a hard mask 20 is included on the substrate 10, the hard mask 20 including a silicon-containing material therein. Since residual air may be present in a reaction chamber for processing a substrate, and air is also present in a transfer case (FOUP) for placing a substrate, the surface of the hard mask 20 and oxygen (O) in the air 2 ) And water vapor (H) 2 O) form a contact. The oxygen and water vapor react with the silicon element (represented by Si + in fig. 3) in the hard mask 20 to form silicon dioxide (SiO) 2 ) Is produced immediatelyA native oxide layer 30 is formed.
It should be noted that the composition of the native oxide layer is not limited to silicon dioxide, and in other embodiments, the composition of the native oxide layer may also be other oxides. That is, when the component of the native oxide layer is an oxide other than silicon dioxide, the semiconductor structure processing method provided in the embodiments of the present disclosure may also be used for processing, and is not limited herein.
And S102, determining the thickness of the natural oxidation layer.
In the embodiment of the present disclosure, since the native oxide layer may adversely affect the subsequent etching, the native oxide layer needs to be processed. The thickness of the native oxide layer may be determined prior to processing the native oxide layer.
Referring to fig. 4, the thickness of the native oxide layer 30 may be measured in various ways. In some embodiments, the thickness of the native oxide layer 30 may be tested by a semiconductor metrology tool; in other embodiments, the thickness of the native oxide layer 30 may be determined based on a wait time (waiting time) after the hard mask 20 is formed.
S103, controlling preset conditions according to the thickness of the natural oxidation layer; the preset conditions include: the flow ratio of the first gas to the second gas.
In the embodiment of the present disclosure, the process of controlling the preset condition may be performed by the control unit. After determining the thickness of the native oxide layer, the control unit may control a preset condition according to the thickness of the native oxide layer to control the reduction reaction to be performed. The predetermined condition includes a flow ratio of the first gas to the second gas.
In the embodiment of the present disclosure, the flow ratio of the first gas to the second gas refers to the flow ratio of the first gas to the second gas when the first gas and the second gas are introduced into the reaction chamber. For example, if the flow rate of the introduced first gas is 500sccm and the flow rate of the introduced second gas is 1000sccm, the flow ratio of the first gas to the second gas is 1; for another example, if the flow rate of the introduced first gas is 1000sccm and the flow rate of the introduced second gas is 0, the flow ratio of the first gas to the second gas is 1; for another example, if the flow rate of the introduced first gas is 0 and the flow rate of the introduced second gas is 1000sccm, the flow ratio of the first gas to the second gas is 0. That is, as shown in fig. 5, a mixed gas containing a first gas and a second gas may be introduced into the reaction chamber; it is also possible to introduce only one gas, i.e. the first gas or the second gas, into the reaction chamber.
In the embodiment of the present disclosure, the preset condition may further include: the temperature in the reaction chamber, the air pressure in the reaction chamber, the radio frequency generated power and the like.
And S104, introducing at least one of first gas and second gas into the reaction cavity under a preset condition, reducing the natural oxidation layer into a gaseous by-product, and pumping out the gaseous by-product from the reaction cavity, so as to remove the natural oxidation layer.
In the embodiment of the present disclosure, referring to fig. 5 and 6, at least one of a first gas and a second gas may be introduced into the reaction chamber under a predetermined condition to reduce the native oxide layer 30 into a gaseous byproduct, and the gaseous byproduct may be extracted from the reaction chamber, so as to remove the native oxide layer 30.
In the embodiment of the present disclosure, the first gas is a shielding gas in the reduction reaction, and the second gas is a reaction gas in the reduction reaction. That is, in the reduction reaction of the native oxide layer, a reduction reaction occurs between the second gas and the native oxide layer; the first gas is used to protect the reduction reaction from interference of other gases and to adjust the concentration of the second gas.
In some embodiments of the present disclosure, the first gas may be nitrogen (N) 2 ) The second gas may be ammonia (NH) 3 ). In the case where the natural oxide component is silica, ammonia gas can react with the silica to reduce the silica to gaseous Silane (SiH) 4 ) I.e. reduced to gaseous by-products.
In other embodiments of the present disclosure, the first gas may be nitrogen (N) 2 ) The second gas may be tetrafluoromethane (CF) 4 ). In the case where the natural oxide component is silica, IVThe fluoromethane can react with the silicon dioxide which is reduced to gaseous silicon tetrafluoride (SiF) by the tetrafluoromethane 4 ) I.e. reduced to gaseous by-products.
And S105, etching the substrate.
In the embodiment of the present disclosure, after the native oxide layer is removed, a subsequent etching process may be performed on the substrate. Referring to fig. 5 and 6, after the native oxide layer 30 is removed, the hard mask 20 on the substrate 10 is exposed, so that an etching process can be performed without being affected by the native oxide layer 30.
It can be understood that, in the embodiments of the present disclosure, the preset condition is controlled according to the thickness of the native oxide layer, and at least one of the first gas and the second gas is introduced into the reaction chamber under the preset condition, so that the native oxide layer is reduced to a gaseous by-product and is extracted from the reaction chamber, and then the native oxide layer is removed, and then the etching process is performed. Therefore, under the condition of not influencing the hard mask, the natural oxide layer is accurately removed, the adverse effect of the natural oxide layer on the etching process is avoided, the risk of over-etching or under-etching is reduced, the accuracy of the key size in the produced integrated circuit is improved, the etching uniformity of the produced integrated circuit is improved, and the yield of the integrated circuit product is improved.
In some embodiments of the present disclosure, S102 shown in fig. 2 may be implemented by S1021 to S1022 shown in fig. 7, which will be described in conjunction with the steps. S1021 to S1022 can be executed by a control unit in a processing apparatus of a semiconductor structure.
And S1021, determining the waiting time after the hard mask is formed.
In the embodiment of the disclosure, the substrate further comprises a hard mask, and the natural oxide layer is formed on the surface of the hard mask. In an actual production process, after the hard mask is formed, the substrate needs to be conveyed to a photoetching machine or an etching machine through a conveying box, and then an etching process is carried out. Since residual air may be present in the reaction chamber in which the substrate is processed and air is also present in the transport box in which the substrate is placed, the surface of the hard mask comes into contact with oxygen and water vapor in the air, and reacts to form a native oxide layer. In some embodiments, referring to fig. 3 and 4, where the hard mask 20 includes a silicon-containing material, oxygen and water vapor in the air react with elemental silicon (denoted as Si + in fig. 3) in the hard mask 20 to form silicon dioxide, i.e., to form a native oxide layer 30.
In the embodiment of the present disclosure, the period from the time when the hard mask is formed to the time before the etching process starts is referred to as a waiting time (waiting time). In an actual production process, the substrates on which the hard masks are formed need to be sequentially transmitted to an etching machine to perform an etching process, and therefore, the waiting time after the hard masks on the substrates are generated is different.
And S1022, determining the thickness of the natural oxidation layer according to the waiting time.
In the embodiment of the present disclosure, since the chemical reaction for generating the native oxide layer occurs within the waiting time, that is, the length of the waiting time is the length of the chemical reaction time for generating the native oxide layer, the longer the waiting time is, the thicker the native oxide layer is, and thus, the thickness of the native oxide layer can be determined according to the waiting time.
FIG. 8 illustrates partial measurements of the latency and critical dimension, and referring to FIG. 8, the longer the latency after forming the hard mask, the smaller the critical dimension of the integrated circuit being produced during the production of the integrated circuit. Since the thickness of the native oxide layer affects the critical dimension of the integrated circuit, the content shown in fig. 8 demonstrates that there is a correspondence between the waiting time and the thickness of the native oxide layer, that is, the thickness of the native oxide layer can be determined according to the waiting time.
It can be understood that the embodiment of the present disclosure determines the thickness of the native oxide layer by the waiting time after the hard mask is formed, and then controls the preset condition according to the thickness of the native oxide layer, and removes the native oxide layer under the preset condition. Therefore, under the condition of not influencing the hard mask, the natural oxide layer is accurately removed, the adverse effect of the natural oxide layer on the etching process is avoided, the risk of over-etching or under-etching is reduced, the accuracy of the key size in the produced integrated circuit is improved, the etching uniformity of the produced integrated circuit is improved, and the yield of the integrated circuit product is improved.
In some embodiments of the present disclosure, the first gas is nitrogen and the second gas is ammonia. In the reduction reaction process of the natural oxidation layer, the first gas is protective gas, and the second gas is reaction gas. In the case where the natural oxide component is silica, ammonia gas may react with the silica in a reduction reaction, and the silica is reduced by the ammonia gas to gaseous silane, i.e., to gaseous by-products.
In some embodiments of the present disclosure, S103 shown in FIG. 2 can be realized by S1031 to S1032 shown in FIG. 9, which will be described in conjunction with each step. S1031 to S1032 can be executed by a control unit in a processing apparatus of the semiconductor structure.
S1031, determining the flow ratio of the first gas to the second gas in a preset data curve according to the thickness of the natural oxidation layer; the preset data curve represents that the flow ratio value decreases with the increase of the thickness of the native oxide layer.
In the embodiment of the present disclosure, the first gas is a protective gas in a reduction reaction, and the second gas is a reaction gas in the reduction reaction, so that the larger the thickness of the natural oxide layer is, the higher the concentration of the second gas is required to participate in the reduction reaction, that is, as the thickness of the natural oxide layer increases, the flow ratio of the introduced first gas to the introduced second gas needs to be correspondingly reduced.
Fig. 10 illustrates a pattern of a preset data curve, and referring to fig. 10, a flow ratio value decreases as the thickness of a native oxide layer increases. For example, in the case of a native oxide layer having a thickness of 2nm, the corresponding flow ratio of the first gas to the second gas is 1; under the condition that the thickness of the natural oxidation layer is 20nm, the corresponding flow ratio of the first gas to the second gas is 2; under the condition that the thickness of the natural oxidation layer is 50nm, the flow ratio of the corresponding first gas to the second gas is 1; in the case of a native oxide layer thickness of 200nm, the corresponding flow ratio of the first gas to the second gas is 0.
In the embodiment of the present disclosure, the control unit may calculate the preset data curve according to the data measured and collected in the previous production process, that is, the preset data curve may be calculated according to a large amount of data currently available. On one hand, the control unit can determine the flow ratio of the first gas and the second gas required to be introduced for carrying out reduction reaction on the natural oxidation layer in the current production process according to a preset data curve; on the other hand, the data (such as critical dimension) measured and collected in the current production process can be used for adjusting the preset data curve, so as to provide a more accurate preset data curve for the subsequent production process.
S1032, controlling the flow rate of the first gas and the flow rate of the second gas to meet the flow rate ratio.
In the embodiment of the present disclosure, after determining the flow ratio of the first gas to the second gas in the preset data curve, the control unit may control the flow of the first gas and the flow of the second gas to satisfy the flow ratio. The gas input port of the reaction chamber is provided with a Mass Flow Controller (MFC), and the control unit is electrically connected with the Mass Flow Controller, so that the control unit can control the Flow of the first gas and the Flow of the second gas to meet the Flow ratio through the Mass Flow Controller.
It can be understood that, according to the thickness of the natural oxidation layer, in the preset data curve, the flow ratio of the first gas to the second gas is determined, and then the preset condition is controlled, and the natural oxidation layer is removed under the preset condition. Therefore, under the condition of not influencing the hard mask, the natural oxide layer is accurately removed, the adverse effect of the natural oxide layer on the etching process is avoided, the accuracy of the key dimension in the produced integrated circuit is improved, the etching uniformity of the produced integrated circuit is improved, and the yield of the integrated circuit product is improved.
In some embodiments of the present disclosure, S1031 illustrated in fig. 9 may be implemented by S1033, which will be described in conjunction with the steps.
S1033, determining that the ratio of the flow rate of the first gas to the flow rate of the second gas is a first value; the first value is a fixed value during the reduction reaction of the native oxide layer.
In the embodiment of the present disclosure, the control unit may determine, according to the thickness of the natural oxide layer, that a ratio of the flow rate of the first gas to the flow rate of the second gas is a first value in a preset data curve. The first value is a fixed value in the reduction reaction process of the natural oxidation layer, which means that the control unit can control the ratio of the flow rates of the two gases not to change in the reduction reaction process, that is, in the reduction reaction process, the two gases can be introduced into the reaction chamber in a fixed proportion.
In some embodiments of the present disclosure, S1031 shown in fig. 9 may be implemented by S1034, which will be described in conjunction with the steps.
S1034, determining that the ratio of the flow of the first gas to the flow of the second gas is a second value; the second value increases with an increase in the reduction reaction time of the native oxide layer.
In the embodiment of the present disclosure, the first gas is a shielding gas in the reduction reaction, and the second gas is a reaction gas in the reduction reaction. The control unit may determine, in the preset data curve, that a ratio of the flow rate of the first gas to the flow rate of the second gas is a second value according to the thickness of the native oxide layer. The second value increases with an increase in the reduction reaction time of the native oxide layer, meaning that the control unit controls the proportion of the second gas to gradually decrease with an increase in the reduction reaction time.
It can be understood that, since the first gas is the protective gas in the reduction reaction and the second gas is the reaction gas in the reduction reaction, as the reduction reaction proceeds, the natural oxide layer is consumed, the thickness of the natural oxide layer gradually decreases, and accordingly, the concentration of the second gas required for continuing the reduction reaction also decreases. Therefore, as the reduction reaction time of the native oxide layer increases, the ratio of the flow rate of the first gas to the flow rate of the second gas is adaptively increased (i.e., the ratio of the second gas is decreased), and the reaction conditions of the reduction reaction can be dynamically adjusted to be kept within an optimal range.
In some embodiments of the present disclosure, the material of the hard mask includes: silicon oxynitride (SiON) and/or silicon nitride (SiN). In other embodiments, the hard mask may be other silicon-containing films, and is not limited herein. On the other hand, the thickness of the natural oxide layer is less than or equal to 200nm, and the thickness range of the natural oxide layer can be obtained through statistics and calculation according to the existing measurement data.
In some embodiments of the present disclosure, a sum of the flow rate of the first gas and the flow rate of the second gas is equal to or greater than 500sccm and equal to or less than 3000sccm.
In the embodiment of the disclosure, the gas input port of the reaction chamber is provided with a flow controller, and the control unit is electrically connected to the flow controller, so that the control unit can control the sum of the flow of the first gas and the flow of the second gas through the flow controller, and the sum of the flow of the two gases is greater than or equal to 500sccm and less than or equal to 3000sccm.
In some embodiments of the present disclosure, the preset conditions further include: the temperature in the reaction chamber; the temperature in the reaction cavity is more than or equal to 200 ℃ and less than or equal to 400 ℃.
In the embodiment of the disclosure, a heating base (Heater) is disposed in the reaction chamber, and the control unit can control the temperature in the reaction chamber by heating the base, so that the temperature in the reaction chamber is greater than or equal to 200 ℃ and less than or equal to 400 ℃.
In some embodiments of the present disclosure, the preset conditions further include: the air pressure in the reaction chamber; the pressure in the reaction chamber is not less than 3torr and not more than 7torr.
In the embodiment of the present disclosure, a gas output port of the reaction chamber is provided with a gas pump (pump), and the gas pump can pump out gas in the reaction chamber. And the flow controller arranged at the gas input port of the reaction cavity can control the flow of the gas input into the reaction cavity. The air pressure in the reaction cavity can be controlled through the cooperation of the flow controller and the air pump. Furthermore, the control unit can control the air pressure in the reaction chamber to be equal to or more than 3torr and equal to or less than 7torr through the flow controller and the air pump.
In some embodiments of the present disclosure, the preset conditions further include: generating power by radio frequency; the radio frequency generated power is more than or equal to 300W and less than or equal to 800W.
In the embodiment of the disclosure, the reaction chamber is further electrically connected with a radio frequency power supply, and the radio frequency power supply can ionize the first gas and/or the second gas introduced into the reaction chamber into plasma (plasma) so as to more effectively perform a reduction reaction on the natural oxide layer. The radio frequency in the radio frequency power supply generates power for controlling the density of the generated plasma. The control unit can control the radio frequency generated power in the radio frequency power supply to be more than or equal to 300W and less than or equal to 800W.
The embodiment of the present disclosure also provides a processing apparatus of a semiconductor structure, as shown in fig. 11, the processing apparatus 80 of a semiconductor structure includes: a control unit 40 and a reaction chamber 50. The control unit 40 is configured to determine a thickness of the native oxide layer, and control a preset condition according to the thickness of the native oxide layer; wherein the preset conditions include: the flow ratio of the first gas to the second gas. The reaction chamber 50 is configured to be introduced with at least one of a first gas and a second gas under a predetermined condition, reduce a native oxide layer formed on the substrate into a gaseous by-product, and extract the gaseous by-product, thereby removing the native oxide layer.
In the embodiment of the present disclosure, the substrate is not limited to a single crystal semiconductor or a polycrystalline semiconductor substrate, and may be an intrinsic single crystal silicon substrate or a lightly doped silicon substrate, and further, may be an N-type polycrystalline silicon substrate or a P-type polycrystalline silicon substrate. The surface of the substrate is formed with a native oxide layer, which in some embodiments may be a thin silicon dioxide layer or other similar material.
In the embodiment of the present disclosure, the first gas is a shielding gas in the reduction reaction, and the second gas is a reaction gas in the reduction reaction. That is, in the reduction reaction of the native oxide layer, a reduction reaction occurs between the second gas and the native oxide layer; the first gas is used to protect the reduction reaction from interference of other gases and to adjust the concentration of the second gas.
In an embodiment of the present disclosure, referring to fig. 11, a substrate is placed on a heated susceptor 502 in a reaction chamber 50. The heated susceptor 502 may heat the substrate, and thus the interior of the reaction chamber 50, to control the temperature within the reaction chamber 50. In some embodiments, the temperature in the reaction chamber is greater than or equal to 200 ℃ and less than or equal to 400 ℃ during the reduction reaction of the native oxide layer.
It can be understood that, in the embodiments of the present disclosure, the preset condition is controlled according to the thickness of the native oxide layer, and at least one of the first gas and the second gas is introduced into the reaction chamber under the preset condition, so that the native oxide layer is reduced to a gaseous by-product and is extracted from the reaction chamber, thereby removing the native oxide layer, and then, the etching process is performed. Therefore, under the condition of not influencing the hard mask, the natural oxide layer is accurately removed, the adverse effect of the natural oxide layer on the etching process is avoided, the accuracy of the key dimension in the produced integrated circuit is improved, the etching uniformity of the produced integrated circuit is improved, and the yield of the integrated circuit product is improved.
In some embodiments of the present disclosure, the substrate further comprises a hard mask, the native oxide layer being formed on a surface of the hard mask. As shown in fig. 11, the control unit 40 is further configured to determine a waiting time after the hard mask is formed, and determine the thickness of the native oxide layer according to the waiting time.
In the embodiment of the disclosure, the substrate further comprises a hard mask, and the natural oxide layer is formed on the surface of the hard mask. In some embodiments, the material of the hard mask includes: silicon oxynitride and/or silicon nitride. In other embodiments, the hard mask may be other silicon-containing films, and is not limited herein.
In an actual production process, after the hard mask is formed, the substrate needs to be conveyed to an etching machine through a conveying box, and then an etching process is carried out. Since residual air may be present in the reaction chamber in which the substrate is processed, and air is also present in the transport box in which the substrate is placed, the surface of the hard mask comes into contact with oxygen and water vapor in the air, and reacts to form a natural oxide layer.
In the embodiment of the present disclosure, the period from the time when the hard mask is formed to the time when the etching process starts is the waiting time. In an actual production process, the substrates on which the hard masks are formed need to be sequentially transferred to an etching machine to perform an etching process, and therefore, the waiting time after the hard masks on the substrates are generated is different. Since the chemical reaction for generating the native oxide layer occurs within the waiting time, that is, the length of the waiting time is the length of the chemical reaction time for generating the native oxide layer, the longer the waiting time is, the thicker the native oxide layer is, and thus, the thickness of the native oxide layer can be determined according to the waiting time.
In some embodiments of the present disclosure, the thickness of the native oxide layer is less than or equal to 200nm, and the thickness range of the native oxide layer can be obtained by statistics and calculation according to the existing measurement data.
It can be understood that, in the embodiments of the present disclosure, the thickness of the native oxide layer is determined by the waiting time after the hard mask is formed, and then, the preset condition is controlled according to the thickness of the native oxide layer, and the native oxide layer is removed under the preset condition. Therefore, under the condition of not influencing the hard mask, the natural oxide layer is accurately removed, the adverse effect of the natural oxide layer on the etching process is avoided, the accuracy of the key dimension in the produced integrated circuit is improved, the etching uniformity of the produced integrated circuit is improved, and the yield of the integrated circuit product is improved.
In some embodiments of the present disclosure, the first gas may be nitrogen and the second gas may be ammonia. In the case where the natural oxide component is silica, ammonia gas may react with the silica in a reduction reaction, and the silica is reduced by the ammonia gas to gaseous silane, i.e., to gaseous by-products.
In other embodiments of the present disclosure, the first gas may be nitrogen and the second gas may be tetrafluoromethane. In the case where the natural oxide component is silica, tetrafluoromethane may be reduced with silica, which is reduced by tetrafluoromethane to gaseous silicon tetrafluoride, i.e., to a gaseous by-product.
In some embodiments of the present disclosure, as shown in fig. 11, the processing device 80 of the semiconductor structure further comprises: a flow controller 60. The flow controller 60 is provided to a gas input port of the reaction chamber 50. The control unit 40 is further configured to store a preset data curve, and determine a flow ratio of the first gas to the second gas in the preset data curve according to the thickness of the natural oxidation layer; and, the flow rate of the first gas and the flow rate of the second gas are controlled to satisfy the flow rate ratio by the flow rate controller 60.
In the embodiment of the present disclosure, the first gas is a protective gas in a reduction reaction, and the second gas is a reaction gas in the reduction reaction, so that the larger the thickness of the natural oxide layer is, the higher the concentration of the second gas is required to participate in the reduction reaction, that is, as the thickness of the natural oxide layer increases, the flow ratio of the introduced first gas to the introduced second gas needs to be correspondingly reduced. Fig. 10 illustrates a pattern of a preset data curve, and referring to fig. 10, a flow ratio value decreases as the thickness of a native oxide layer increases.
In the embodiment of the present disclosure, the control unit may calculate the preset data curve according to the data measured and collected in the previous production process, that is, the preset data curve may be calculated according to a large amount of data currently available. On one hand, the control unit can determine the flow ratio of the first gas and the second gas required to be introduced for carrying out reduction reaction on the natural oxide layer in the current production process according to a preset data curve; on the other hand, the data (such as critical dimension) measured and collected in the current production process can be used for adjusting the preset data curve, so as to provide a more accurate preset data curve for the subsequent production process.
In some embodiments of the present disclosure, referring to fig. 11, the control unit 40 may control the sum of the flow rates of the first gas and the second gas by the flow controller 60 such that the sum of the flow rates of the two gases is equal to or greater than 500 seem and equal to or less than 3000 seem.
It can be understood that, according to the thickness of the natural oxidation layer, in the preset data curve, the flow ratio of the first gas to the second gas is determined, and then the preset condition is controlled, and the natural oxidation layer is removed under the preset condition. Therefore, under the condition of not influencing the hard mask, the natural oxide layer is accurately removed, the adverse effect of the natural oxide layer on the etching process is avoided, the accuracy of the key dimension in the produced integrated circuit is improved, the etching uniformity of the produced integrated circuit is improved, and the yield of the integrated circuit product is improved.
In some embodiments of the present disclosure, referring to fig. 11, the control unit 40 may determine, in a preset data curve, that a ratio of the flow rate of the first gas to the flow rate of the second gas is a first value according to the thickness of the native oxide layer, wherein the first value is a fixed value during the reduction reaction of the native oxide layer. That is, the control unit controls the ratio of the flow rates of the two gases not to change during the reduction reaction, that is, the two gases are introduced into the reaction chamber 50 at a fixed ratio during the reduction reaction.
In some embodiments of the present disclosure, referring to fig. 11, the control unit 40 may determine, in a preset data curve, that a ratio of the flow rate of the first gas to the flow rate of the second gas is a second value according to the thickness of the native oxide layer, wherein the second value increases as the reduction reaction time of the native oxide layer increases. That is, the control unit 40 controls the ratio of the second gas to be gradually decreased as the reduction reaction time is increased.
It can be understood that, since the first gas is the protective gas in the reduction reaction and the second gas is the reaction gas in the reduction reaction, as the reduction reaction proceeds, the natural oxide layer is consumed, the thickness of the natural oxide layer gradually decreases, and accordingly, the concentration of the second gas required for continuing the reduction reaction also decreases. Therefore, as the reduction reaction time of the native oxide layer increases, the ratio of the flow rate of the first gas to the flow rate of the second gas is adaptively increased (i.e., the ratio of the second gas is decreased), and the reaction conditions of the reduction reaction can be dynamically adjusted to be kept within an optimal range.
In some embodiments of the present disclosure, the preset conditions further include: the radio frequency generates power. As shown in fig. 11, the processing apparatus 80 for a semiconductor structure further includes: a radio frequency power supply 70; the rf power source 70 is electrically connected to the reaction chamber 50. The control unit 40 is also used to control the radio frequency generated power by the radio frequency power supply 70.
In the embodiment of the disclosure, referring to fig. 11, the rf power source 70 may ionize the first gas and/or the second gas introduced into the reaction chamber into a plasma, and the shower head (shower head) 501 injects the plasma into the reaction chamber 50, so as to perform a reduction reaction on the native oxide layer more effectively. The radio frequency in the radio frequency power supply 70 generates power for controlling the density of the generated plasma. The control unit 40 may control the rf generation power in the rf power supply 70 to be 300W or more and 800W or less.
In some embodiments of the present disclosure, the preset conditions further include: the pressure in the reaction chamber. As shown in fig. 11, the gas output port of the reaction chamber 50 is provided with a gas pump (not shown in fig. 11) for pumping out the gas in the reaction chamber 50. The air pressure in the reaction chamber can be controlled by the cooperation of the flow controller 60 and the air pump. Further, the control unit 40 can control the pressure in the reaction chamber to be 3torr or higher and 7torr or lower by the flow controller 60 and the air pump.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a component of' 8230; \8230;" does not exclude the presence of another like element in a process, method, article, or apparatus that comprises the element.
The above-mentioned serial numbers of the embodiments of the present disclosure are merely for description, and do not represent the advantages or disadvantages of the embodiments. The methods disclosed in the several method embodiments provided in this disclosure may be combined arbitrarily without conflict to arrive at new method embodiments. Features disclosed in several of the product embodiments provided in this disclosure may be combined in any combination to yield new product embodiments without conflict. The features disclosed in the several method or apparatus embodiments provided in this disclosure may be combined in any combination to arrive at a new method or apparatus embodiment without conflict.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (14)

1. A method of processing a semiconductor structure, the method comprising:
providing a substrate; a natural oxide layer is formed on the substrate;
determining the thickness of the natural oxidation layer;
controlling a preset condition according to the thickness of the natural oxidation layer; the preset conditions include: a flow ratio of the first gas to the second gas;
under the preset condition, at least one of the first gas and the second gas is introduced into a reaction cavity, the natural oxidation layer is reduced into a gaseous by-product and is extracted from the reaction cavity, and therefore the natural oxidation layer is removed;
etching the substrate;
wherein, according to the thickness of the natural oxidation layer, the preset condition is controlled, including:
determining the flow ratio of the first gas to the second gas in a preset data curve according to the thickness of the natural oxidation layer; the preset data curve represents that the flow ratio is reduced along with the increase of the thickness of the natural oxidation layer;
controlling the flow rate of the first gas and the flow rate of the second gas to satisfy the flow rate ratio.
2. The method of claim 1, wherein the substrate further comprises a hard mask, and the native oxide layer is formed on a surface of the hard mask; the determining the thickness of the native oxide layer comprises:
determining the waiting time after the hard mask is formed;
and determining the thickness of the natural oxidation layer according to the waiting time.
3. The method of processing a semiconductor structure according to claim 1 or 2,
the first gas is nitrogen, and the second gas is ammonia.
4. The method of claim 1, wherein said determining a flow ratio of said first gas to said second gas comprises:
determining that the ratio of the flow rate of the first gas to the flow rate of the second gas is a first value; the first value is a fixed value in the reduction reaction process of the natural oxidation layer.
5. The method of claim 1, wherein said determining a flow ratio of said first gas to said second gas comprises:
determining that the ratio of the flow of the first gas to the flow of the second gas is a second value; the second value increases with an increase in reduction reaction time of the native oxide layer.
6. The method of claim 2, wherein the step of forming the semiconductor structure comprises,
the hard mask comprises the following materials: silicon oxynitride and/or silicon nitride;
the thickness of the natural oxide layer is less than or equal to 200nm.
7. The method according to claim 3, wherein the sum of the flow rate of the first gas and the flow rate of the second gas is equal to or greater than 500sccm and equal to or less than 3000sccm.
8. The method of claim 3, wherein the predetermined condition further comprises: the temperature in the reaction chamber; the temperature in the reaction cavity is more than or equal to 200 ℃ and less than or equal to 400 ℃.
9. The method of claim 3, wherein the predetermined condition further comprises: the air pressure in the reaction chamber; the pressure in the reaction cavity is more than or equal to 3torr and less than or equal to 7torr.
10. The method of claim 3, wherein the predetermined condition further comprises: generating power by radio frequency; the radio frequency generated power is more than or equal to 300W and less than or equal to 800W.
11. An apparatus for processing a semiconductor structure, the apparatus comprising:
the control unit is used for determining the thickness of a natural oxidation layer formed on the substrate and controlling a preset condition according to the thickness of the natural oxidation layer; the preset conditions include: the flow ratio of the first gas to the second gas;
the reaction chamber is used for introducing at least one of the first gas and the second gas under a preset condition, reducing the natural oxidation layer into a gaseous by-product and pumping out the gaseous by-product so as to remove the natural oxidation layer;
the apparatus for processing a semiconductor structure further comprises: a flow controller; the flow controller is arranged at a gas input port of the reaction cavity;
the control unit is further configured to store a preset data curve, and determine a flow ratio of the first gas to the second gas in the preset data curve according to the thickness of the natural oxidation layer; and controlling, by the flow controller, the flow of the first gas and the flow of the second gas to satisfy the flow ratio; wherein the preset data curve represents that the flow ratio decreases with an increase in the thickness of the native oxide layer.
12. The apparatus for processing a semiconductor structure as recited in claim 11, wherein the substrate further comprises a hard mask, the native oxide layer being formed on a surface of the hard mask;
the control unit is also used for determining the waiting time after the hard mask is formed; and determining the thickness of the natural oxidation layer according to the waiting time.
13. The apparatus of claim 11, wherein the first gas is nitrogen and the second gas is ammonia.
14. The apparatus of claim 13, wherein the predetermined conditions further comprise: generating power by radio frequency;
the apparatus for processing a semiconductor structure further comprises: a radio frequency power supply; the radio frequency power supply is electrically connected with the reaction cavity;
the control unit is also used for controlling the radio frequency to generate power through the radio frequency power supply.
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