CN203112919U - Gas phase processing device - Google Patents
Gas phase processing device Download PDFInfo
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- CN203112919U CN203112919U CN 201320090246 CN201320090246U CN203112919U CN 203112919 U CN203112919 U CN 203112919U CN 201320090246 CN201320090246 CN 201320090246 CN 201320090246 U CN201320090246 U CN 201320090246U CN 203112919 U CN203112919 U CN 203112919U
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Abstract
The utility model provides a gas phase processing device, belongs to the field of substrate processing technique, and solves the problem of high probability of uneven processing effect caused by differences on air extracting capacity of an air extracting pump and pumping hole position distribution in a conventional gas phase processing device. The gas phase processing device provided by the utility model is used for processing a substrate inside a processing cavity under a gas phase environment, the gas phase processing device comprises a processing cavity, and a plurality of air extracting pumps, wherein the processing cavity comprises a plurality of pumping holes formed in different positions; the air extracting pumps are used for air extracting to the processing cavity; and the at least one air extracting pump is communicated with a plurality of pumping holes respectively through a plurality of extraction pipes.
Description
Technical field
The utility model belongs to the base treatment technical field, is specifically related to a kind of gas-treatment means.
Background technology
Gas-treatment means is for substrate (as substrate of glass, wafer etc.) is handled (as suprabasil structure is carried out etching, or form required film layer structure etc. in substrate) device, it is widely used in fields such as unicircuit manufacturing, display unit (as liquid crystal indicator, OLED display unit etc.) manufacturing.
According to the difference of concrete handling principle, gas-treatment means can be divided into types such as dry etching device, plasma enhanced chemical vapor deposition unit, evaporation coating device, sputter equipment, molecular beam epitaxial growth device, apparatus for atomic layer deposition.The common ground of these gas-treatment means is to have the treatment chamber for the processing substrate, behind the feeding process gas, can handle substrate by forms such as chemical reaction, particle hits in treatment chamber; For conditions such as the composition that makes process gas in the treatment chamber, pressure keep stable, from treatment chamber, extract process gas out so in treating processes, need the limit to feed the process gas limit.
An object lesson as gas-treatment means, the structure of dry etching device such as Fig. 1, shown in Figure 2, has the base station 91 for bearing basement in its treatment chamber 9, (hole count is generally above 100,000 from a plurality of tiny air inlet port at treatment chamber 9 tops for process gas, not shown) in evenly flow to base station 91, be provided with the dividing plate 92 that links to each other with treatment chamber 9 sidewalls around the base station 91, dividing plate 92 is provided with bleeding point 5 at the Si Jiaochu for the treatment of chamber 9, dividing plate 92 belows are provided with a plurality of openings 93, each opening 93 is connected with an off-gas pump 6 (as molecular pump-dried pump assembly), thereby off-gas pump 6 can be bled by 5 pairs for the treatment of chamber 9 of bleeding point.
Of course it is to be understood that Fig. 2 has just schematically expressed the annexation of off-gas pump 6 with opening 93, and do not constitute the restriction to off-gas pump 6 particular locations, off-gas pump 6 also can be connected with opening 93 by pipe connecting.
Wherein, the purpose that dividing plate 92 is set is to avoid the process gas flow with opening 93 direct opposite positions excessive, make rate of air sucked in required even, thereby guarantee the homogeneity (because substrate treatment effect everywhere is relevant with the process gas flow that flows through this place) of the treatment effect (as etching degree, film forming thickness etc.) of substrate position.Dividing plate 92 also has and prevents when treatment chamber 9 changes vacuum state into by atmospheric condition that off-gas pump 6 speed of evacuations are too fast and cause effects such as substrate displacement on the base station 91.
The contriver finds that there are the following problems at least in the prior art: the exhaust capacity of each off-gas pump in the same gas-treatment means may be different (reasons such as difference, equipment failure that comprise difference, the equipment running status of equipment itself), and the difference of off-gas pump exhaust capacity can cause the gas velocity, flow at each bleeding point place etc. to produce difference, thereby influence the homogeneity of base treatment effect, reduce quality product.In addition, bleeding point simply is arranged at four jiaos for the treatment of chamber, can cause four jiaos of process gas flows bigger than normal, thereby causes that unusual (product just occurred carving through regular meeting in this position in as dry etching equipment) appears in product in this position, influence quality product.
The utility model content
The purpose of this utility model comprises, easily because of the difference of off-gas pump exhaust capacity and the problem that the bleeding point position distribution causes the treatment effect inequality, provides a kind of gas-treatment means that guarantees the treatment effect homogeneity at existing gas-treatment means.
The technical scheme that solution the utility model technical problem adopts is a kind of gas-treatment means, handles for the substrate to treatment chamber under gaseous environment, and described gas-treatment means comprises:
Treatment chamber comprises a plurality of bleeding points of being located at different positions;
A plurality of off-gas pumps are used for by bleeding point treatment chamber being bled; And have at least a described off-gas pump to be connected with a plurality of bleeding points respectively by many extraction pipes.
Wherein, " off-gas pump is connected with a plurality of bleeding points respectively by many extraction pipes " refers to that this off-gas pump is connected with many extraction pipes, and these extraction pipes connect a plurality of bleeding points respectively; In other words, an off-gas pump is bled to a plurality of bleeding points simultaneously by extraction pipe.
Preferably, have at least a bleeding point to be connected with a plurality of off-gas pumps by many extraction pipes.
Further preferably, each described off-gas pump all is connected with all bleeding point respectively by many extraction pipes.
Preferably, a certain off-gas pump is connected with a plurality of bleeding points by many extraction pipes, and then each bleeding point that is connected with this off-gas pump is for the ∑ r of this off-gas pump
4/ L value equates; Wherein, r is the inside radius of an extraction pipe that is connected with this off-gas pump, and L is the length of this extraction pipe, and ∑ is represented being connected the r of the whole extraction pipes between a bleeding point and this off-gas pump
4/ L value is sued for peace.
Preferably, described extraction pipe is provided with flow director.
Further preferably, described flow director is positioned at outside the treatment chamber.
Further preferably, also be provided with flow detector on the described extraction pipe.
Further preferably, described flow detector is positioned at outside the treatment chamber.
Preferably, each described bleeding point is around even distribution of position periphery that is used for placing described substrate.
Preferably, described gas-treatment means is any one in dry etching device, plasma enhanced chemical vapor deposition unit, evaporation coating device, sputter equipment, molecular beam epitaxial growth device, the apparatus for atomic layer deposition.
In the gas-treatment means of the present utility model, off-gas pump is connected with a plurality of bleeding points by many extraction pipes, and namely off-gas pump is bled to a plurality of bleeding points simultaneously; Therefore, if the exhaust capacity of this off-gas pump changes (stopping as barrier for some reason), then respective change can together take place in the exhaust capacity of coupled logical a plurality of bleeding points, and the exhaust capacity between each bleeding point still keeps even relatively.Simultaneously, rate of air sucked in required by increasing the residue off-gas pump and other processing parameters of regulation and control (as etching time etc.), still can realize that the treatment chamber process environments normally reaches technology and normally carries out, thereby can guarantee the homogeneity of base treatment effect preferably, improve the quality of products.
Description of drawings
Fig. 1 is the plan structure synoptic diagram of the treatment chamber of existing dry etching device;
Fig. 2 is that Fig. 1 is along the cross-sectional view of AA ' line;
Fig. 3 is the plan structure synoptic diagram of the dry etching device of embodiment 2 of the present utility model;
Fig. 4 is the partial schematic structure iron of the another kind of dry etching device of embodiment 2 of the present utility model;
Fig. 5 is the partial schematic structure iron of the another kind of dry etching device of embodiment 2 of the present utility model;
Fig. 6 is the partial schematic structure iron of the another kind of dry etching device of embodiment 2 of the present utility model;
Fig. 7 is the partial schematic structure iron of the another kind of dry etching device of embodiment 2 of the present utility model;
Fig. 8 is the partial schematic structure iron of the another kind of dry etching device of embodiment 2 of the present utility model;
Wherein Reference numeral is: 5, bleeding point; 6, off-gas pump; 7, extraction pipe; 71, flow director; 72, flow detector; 9, treatment chamber; 91, base station; 92, dividing plate; 93, opening; 94, inwall.
Embodiment
For making those skilled in the art understand the technical solution of the utility model better, below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
Embodiment 1:
Present embodiment provides a kind of gas-treatment means, and it is handled for the substrate to treatment chamber under gaseous environment.Described gas-treatment means comprises:
Treatment chamber, it comprises a plurality of bleeding points of being located at different positions;
A plurality of off-gas pumps are used for by bleeding point treatment chamber being bled; And have at least a described off-gas pump to be connected with a plurality of bleeding points respectively by many extraction pipes.
In the gas-treatment means of present embodiment, off-gas pump is connected with a plurality of bleeding points by many extraction pipes, and namely off-gas pump is bled to a plurality of bleeding points simultaneously; Therefore, if the exhaust capacity of this off-gas pump changes (stopping as barrier for some reason), then respective change can together take place in the exhaust capacity of coupled logical a plurality of bleeding points, and the exhaust capacity between each bleeding point still keeps even relatively.Simultaneously, rate of air sucked in required and other processing parameters of regulation and control by increasing the residue off-gas pump (as etching time etc.), can realize that still the treatment chamber process environments is normal, thereby can guarantee the homogeneity of base treatment effect preferably, improve the quality of products.
Preferably, each bleeding point in the treatment chamber evenly arranges around base station periphery that be used for to place substrate, and bleeding point quantity preferably surpasses existing bleeding point quantity, and size is less than existing bleeding point, so that it is more even to bleed.
Obviously, bleeding point becomes by simply being arranged at four jiaos for the treatment of chamber and evenly is set to a plurality of around the substrate periphery, can effectively solve like this owing to producing the problem of unusual (quarter often appearred in this position of product in as dry etching equipment) at four jiaos of excessive products that cause of place's process gas flow in this position, and because bleeding point diminishes, becomes many, the position is reasonable, so can prevent from when treatment chamber changes vacuum state into by atmospheric condition, causing owing to the off-gas pump airshed is excessive the problem of substrate displacement equally.
Embodiment 2:
To shown in Figure 8, present embodiment provides a kind of gas-treatment means as Fig. 3, and it is used under gaseous environment the substrate for the treatment of chamber 9 being handled, and this processing can comprise to be carried out etching, form required film layer structure etc. in substrate suprabasil structure.
Preferably, this gas-treatment means is any one in dry etching device, plasma enhanced chemical vapor deposition unit, evaporation coating device, sputter equipment, molecular beam epitaxial growth device, the apparatus for atomic layer deposition.
With the example of dry etching device as gas-treatment means, but should be appreciated that the gas-treatment means of present embodiment also can be other type in the present embodiment.
The gas-treatment means of present embodiment comprises:
A plurality of off-gas pumps 6 are used for bleeding by 5 pairs for the treatment of chamber 9 of bleeding point.
Certainly, according to the difference of type of device, also should comprise other known structure in the gas-treatment means, for example base station 91, air inlet port, electrode, mask plate etc. are not described in detail at this.
Preferably, each bleeding point 5 is around even distribution of position periphery that is used for placing substrate.
Obviously, the more even homogeneity that more is conducive to guarantee treatment effect of the distribution of bleeding point 5.
Wherein, the concrete distribution form of bleeding point 5 can be various, for example, can be as shown in Figure 3, in gas-treatment means (be example with the dry etching device), be not to be provided with 4 bleeding points in corner on the dividing plate 92, but it is certain evenly to be provided with 16 bleeding point 5(around the edge of base station 91, bleeding point 5 quantity also can arrange more according to circumstances, and the position also can be adjusted as required).
Perhaps, also as shown in Figure 4, do not have dividing plate in the treatment chamber 9, but be provided with the vertical inwall 94 around base station 91, and bleeding point 5 can be evenly distributed on each side bottom of this inwall 94 near on the position of base station 91.Perhaps, also can not have structures such as dividing plate, inwall in the treatment chamber 9, and bleeding point 5 is directly arranged on the wall for the treatment of chamber 9.In a word, the concrete distribution form of bleeding point 5 is unrestricted, as long as it can be connected with off-gas pump 6, thereby off-gas pump 6 can be bled by 5 pairs for the treatment of chamber 9 of bleeding point, and guarantees that process gas base station 91 surfaces of flowing through get final product.
Wherein, Fig. 4 to Fig. 8 has just schematically expressed the mode of connection of 5 of each off-gas pump 6 and bleeding points, and it does not constitute the actual quantity of off-gas pump 6, bleeding point 5, extraction pipe 7 etc., position, size etc. and limits.
In a plurality of off-gas pumps 6 of gas-treatment means, have at least one to be connected with a plurality of bleeding points 5 respectively by many extraction pipes 7.
That is to say to have at least an off-gas pump 6 simultaneously a plurality of bleeding points 5 to be bled by many extraction pipes 7; Like this, the exhaust capacity of this off-gas pump 6 can be simultaneously exerts an influence to a plurality of positions of substrate periphery; Therefore, when the exhaust capacity of this off-gas pump 6 and other off-gas pumps 6 not simultaneously, this difference can act on a plurality of positions of substrate simultaneously, thus still keep substrate everywhere rate of air sucked in required evenly.
Preferably, have at least a bleeding point 5 to be connected with a plurality of off-gas pumps 6 by many extraction pipes 7.
That is to say that each bleeding point 5 can only be connected with an extraction pipe 7, the extraction pipe 7 of a plurality of off-gas pumps 6 can be connected respectively to different positions in other words, thereby respectively different positions is bled.But as preferred scheme, a bleeding point 5 can be connected with the many extraction pipes 7 of a plurality of off-gas pumps 6 simultaneously, and the extraction pipe 7 of a plurality of off-gas pumps 6 can concentrate on bleeding point 5 places in other words.
According to above structure, bleeding point 5 places have many from the extraction pipe 7 of different off-gas pumps 6, therefore under the equal situation of extraction pipe 7 sums of each bleeding point 5 correspondence, the comparatively small amt of its bleeding point 5 more is conducive to the even distribution (because it is limited to be suitable for arranging the position of bleeding point 5) of bleeding point 5.
Further preferred, each off-gas pump 6 all is connected with all bleeding point 5 respectively by many extraction pipes 7; Each bleeding point 5 all is connected with all off-gas pump 6 respectively by many extraction pipes 7.
That is to say that preferably each off-gas pump 6 all is connected with whole bleeding points 5, and each bleeding point 5 is connected with whole off-gas pumps 6 all, obviously like this is conducive to most to guarantee the homogeneity of bleeding.
Certainly, the quantity that above preferred version does not represent off-gas pump 6, bleeding point 5 will equate that 16 bleeding points 5 for example can be arranged in the present embodiment dry etching device, but has only 8 off-gas pumps 6.
Obviously, same off-gas pump 6 should equate preferably that in the exhaust capacity that each bleeding point 5 place produces when the exhaust capacity of this off-gas pump 6 changed, the intensity of variation of the exhaust capacity at each bleeding point 5 place also equated like this.
Preferably, a certain off-gas pump 6 is connected with a plurality of bleeding points 5 by many extraction pipes 7, and then each bleeding point 5 that is connected with this off-gas pump 6 is for the ∑ r of this off-gas pump 6
4/ L value equates; Wherein, r is the inside radius of an extraction pipe 7 that is connected with this off-gas pump 6, and L is the length of this extraction pipe 7, and ∑ is represented the r to the whole extraction pipes 7 that are connected 6 of a bleeding point 5 and this off-gas pumps
4/ L value is sued for peace; Certainly, if bleeding point 5 and 6 of off-gas pumps have only an extraction pipe 7, then ∑ r
4The value of/L is exactly the r of this extraction pipe 7
4/ L value.
Obviously, guarantee that the exhaust capacity that an off-gas pump 6 produces at each bleeding point 5 place equates, just guarantee to equate with the flow of extraction pipe 7 at each bleeding point 5 place that this off-gas pump 6 is connected.
According to the poiseuille theorem, the calculation formula of the fluid flow rate Q in the pipe is:
Q=Δ p/R, and R=8 η L/ (π r
4);
Wherein, Δ p is the pressure difference at pipe two ends, and R is the flow resistance of pipe, and η is the viscosity factor of fluid, and r is the radius of pipe, and L is the length of pipe.
For same treatment chamber 9, its η equates, and to same off-gas pump 6, Δ p also equates; Therefore, r
4The value of/L can represent the flow (of course not absolute value, just relative value) in this extraction pipe 7; And when a bleeding point 5 and 6 of off-gas pumps have many extraction pipes 7, ∑ r
4The value of/L just can represent this off-gas pump 6 in total exhaust capacity at these bleeding point 5 places; Therefore, when an off-gas pump 6 is connected with a plurality of bleeding points 5, as long as the ∑ r corresponding with this off-gas pump 6 that guarantees each bleeding point 5
4/ L value equates, can guarantee that this off-gas pump 6 equates in the exhaust capacity at each bleeding point 5 place.
Should be appreciated that above narration refers to the ∑ r at each bleeding point 5 of same off-gas pump 6
4/ L value should equate, and same bleeding point 5 is at the ∑ r of different off-gas pumps 6
4/ L value not necessarily equates; That is to say that an off-gas pump 6 preferably equates in the exhaust capacity of each bleeding point 5 places generation, and the exhaust capacity that different off-gas pump 6 produces at same bleeding point 5 places can not wait (equating more excellent certainly).
Concrete, above-mentioned relation of equality can realize by the length of adjusting extraction pipe 7, can be as shown in Figure 5, and can be provided with bending structure in the extraction pipe 7 that the nearer bleeding point 5 of distance off-gas pump 6 is connected, thereby its length is increased.
Perhaps, above-mentioned relation of equality also can realize by the internal diameter of adjusting extraction pipe 7, can be as shown in Figure 6, and less with extraction pipe 7 internal diameters that the nearer bleeding point 5 of distance off-gas pump 6 is connected.
Perhaps, above-mentioned relation of equality also can be connected to the extraction pipe 7 quantity realization of bleeding point 5 by adjustment, can be connected with off-gas pump 6 by many extraction pipes 7 apart from off-gas pump 6 bleeding points 5 far away as shown in Figure 7.
Certainly, the multiple means of above bleeding regulating amount also can fully utilize, as long as it finally can make above-mentioned ∑ r
4/ L value equates to get final product.
As the another kind of mode of bleeding regulating amount, preferred, as shown in Figure 8, be provided with flow director 71 (for example flow valve) at extraction pipe 7.
By regulating the flow director 71 on each extraction pipe 7, can control the flow of each extraction pipe 7 more flexibly separately.
Further preferred, each flow director 71 is positioned at outside the treatment chamber 9.
Obviously, in treating processes, be difficult to the flow director 71 that is arranged in treatment chamber 9 is regulated, so flow director 71 preferably is located at outside the treatment chamber 9, thereby guarantees in treating processes, also can regulate in real time it.
Further preferred, also be provided with flow detector 72 (as mass flowmeter, to realize precision measurement and the control to the mass rate of gas in the extraction pipe 7) on the extraction pipe 7.
Further preferred, each flow detector 72 is positioned at outside the treatment chamber 9, thereby can conveniently observe the detected result of flow detector 72.
That is to say, preferably also be provided with on the extraction pipe 7 and can detect the wherein flow detector 72 of gas flow, thus the flow in each extraction pipe 7 of acquisition that can be real-time, and regulate flow director 71 more accurately according to this flow.
Obviously, above-mentioned method with flow director 71 control flows can be used separately, but also can control the method for flow and combine with above-mentioned bleeding regulating pipe 7 length, internal diameter, quantity passed through.
Certainly, the flow control of each extraction pipe 7 also has other method, for example changes degree of crook, cross-sectional shape of extraction pipe 7 etc., describes in detail no longer one by one at this.
Be understandable that above embodiment only is the illustrative embodiments that adopts for principle of the present utility model is described, yet the utility model is not limited thereto.For those skilled in the art, under the situation that does not break away from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement also are considered as protection domain of the present utility model.
Claims (10)
1. a gas-treatment means is handled for the substrate to treatment chamber under gaseous environment, and described gas-treatment means comprises:
Treatment chamber comprises a plurality of bleeding points of being located at different positions;
A plurality of off-gas pumps are used for by bleeding point treatment chamber being bled;
It is characterized in that,
Have at least a described off-gas pump to be connected with a plurality of bleeding points respectively by many extraction pipes.
2. gas-treatment means according to claim 1 is characterized in that,
Have at least a bleeding point to be connected with a plurality of off-gas pumps by many extraction pipes.
3. gas-treatment means according to claim 2 is characterized in that,
Each described off-gas pump all is connected with all bleeding point respectively by many extraction pipes.
4. gas-treatment means according to claim 1 is characterized in that,
A certain off-gas pump is connected with a plurality of bleeding points by many extraction pipes, and then each bleeding point that is connected with this off-gas pump is for the ∑ r of this off-gas pump
4/ L value equates; Wherein, r is the inside radius of an extraction pipe that is connected with this off-gas pump, and L is the length of this extraction pipe, and ∑ is represented being connected the r of the whole extraction pipes between a bleeding point and this off-gas pump
4/ L value is sued for peace.
5. gas-treatment means according to claim 1 is characterized in that,
Described extraction pipe is provided with flow director.
6. gas-treatment means according to claim 5 is characterized in that,
Described flow director is positioned at outside the treatment chamber.
7. gas-treatment means according to claim 5 is characterized in that,
Also be provided with flow detector on the described extraction pipe.
8. gas-treatment means according to claim 7 is characterized in that,
Described flow detector is positioned at outside the treatment chamber.
9. according to any described gas-treatment means in the claim 1 to 8, it is characterized in that,
Each described bleeding point is around even distribution of position periphery that is used for placing described substrate.
10. according to any described gas-treatment means in the claim 1 to 8, it is characterized in that,
Described gas-treatment means is any one in dry etching device, plasma enhanced chemical vapor deposition unit, evaporation coating device, sputter equipment, molecular beam epitaxial growth device, the apparatus for atomic layer deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320090246 CN203112919U (en) | 2013-02-27 | 2013-02-27 | Gas phase processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320090246 CN203112919U (en) | 2013-02-27 | 2013-02-27 | Gas phase processing device |
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| Publication Number | Publication Date |
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| CN203112919U true CN203112919U (en) | 2013-08-07 |
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ID=48893286
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| CN 201320090246 Expired - Fee Related CN203112919U (en) | 2013-02-27 | 2013-02-27 | Gas phase processing device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022006A (en) * | 2014-05-23 | 2014-09-03 | 深圳市华星光电技术有限公司 | Dry etching equipment and method thereof |
| CN109065431A (en) * | 2018-07-27 | 2018-12-21 | 上海华力集成电路制造有限公司 | Oxide gasification finish device |
| CN109087869A (en) * | 2018-06-28 | 2018-12-25 | 武汉华星光电技术有限公司 | Exhaust apparatus and dry etching equipment |
| CN109935541A (en) * | 2019-03-13 | 2019-06-25 | 江苏鲁汶仪器有限公司 | A kind of reaction chamber |
| CN111074219A (en) * | 2018-10-19 | 2020-04-28 | 君泰创新（北京）科技有限公司 | Magnetron sputtering device |
-
2013
- 2013-02-27 CN CN 201320090246 patent/CN203112919U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022006A (en) * | 2014-05-23 | 2014-09-03 | 深圳市华星光电技术有限公司 | Dry etching equipment and method thereof |
| CN109087869A (en) * | 2018-06-28 | 2018-12-25 | 武汉华星光电技术有限公司 | Exhaust apparatus and dry etching equipment |
| CN109065431A (en) * | 2018-07-27 | 2018-12-21 | 上海华力集成电路制造有限公司 | Oxide gasification finish device |
| CN111074219A (en) * | 2018-10-19 | 2020-04-28 | 君泰创新（北京）科技有限公司 | Magnetron sputtering device |
| CN109935541A (en) * | 2019-03-13 | 2019-06-25 | 江苏鲁汶仪器有限公司 | A kind of reaction chamber |
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Granted publication date: 20130807 |