CN109087869A - Exhaust apparatus and dry etching equipment - Google Patents
Exhaust apparatus and dry etching equipment Download PDFInfo
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- CN109087869A CN109087869A CN201810690779.2A CN201810690779A CN109087869A CN 109087869 A CN109087869 A CN 109087869A CN 201810690779 A CN201810690779 A CN 201810690779A CN 109087869 A CN109087869 A CN 109087869A
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- gas
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- 238000001312 dry etching Methods 0.000 title claims abstract description 14
- 239000011796 hollow space material Substances 0.000 claims abstract description 12
- 230000006698 induction Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 27
- 238000010586 diagram Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
This application discloses a kind of exhaust apparatus and dry etching equipments, exhaust apparatus includes exhaust pump and exhaust cavity, exhaust cavity is hollow and is a framework, the hollow space of exhaust pump connection exhaust cavity, framework is arranged in the periphery of the placement location of part to be etched, the surface of framework is formed with multiple gas vents, and the gas around part to be etched is discharged by being vented cavity in exhaust pump.The application, which passes through, will be vented cavity in the setting of the periphery of the placement location of part to be etched, and framework surface includes multiple gas vents, be vented from exhaust cavity by exhaust pump, so that gas is uniformly discharged from multiple gas vents of part surrounding to be etched.The application makes the surrounding Uniform gas flow velocity of part to be etched, keeps etching homogeneity, and then avoid etching residue.
Description
Technical field
This application involves field of display technology, more particularly to a kind of exhaust apparatus and dry etching equipment.
Background technique
With the development of semiconductor technology, requirement of the screen display technology to semiconductor fabrication process is higher and higher, dry method
The lithographic technique role indispensable in wherein performer, while higher requirement will be proposed to dry etching equipment.Dry method
Etching is that the technology of film etching is carried out with plasma.In the presence of gas is with plasma form, it has two features:
It is eager to excel when these aerochemistry activity in one side plasma are than under normality very much, according to the difference for the material that is etched, choosing
Select suitable gas, so that it may quickly be reacted with material, realize the purpose of etching removal；It on the other hand, can be with benefit
It is guided and is accelerated with electric field plasma, it is made to have certain energy, when its bombardment is etched the surface of object, can incited somebody to action
The atom of object material of being etched is hit, to achieve the purpose that realize etching using energy transfer physically.Therefore, dry method
Etching is the result of wafer surface physics and chemical two kinds of process balances.
Current dry etching equipment generally using point pumping, be easy to cause chamber interior quadrangle etch rate occur inclined
Greatly/situation less than normal, causes to etch homogeneity and deteriorates, and then etching residue occurs.Especially grid grade electrode and source-drain electrode, this
Twice smithcraft is high to technique requirement, and current dry etching equipment is unable to satisfy requirement.
That is, the surrounding gas flow rate that will appear part to be etched in the prior art is uneven, cause to etch homogeneity
Deteriorate, and then etching residue occurs.
Summary of the invention
The application enables to be etched mainly solving the technical problems that provide a kind of exhaust apparatus and dry etching equipment
The surrounding Uniform gas flow velocity of part is lost, keeps etching homogeneity, and then avoid etching residue.
In order to solve the above technical problems, the technical solution that the application uses is: providing a kind of exhaust apparatus, including row
Air pump and exhaust cavity, exhaust cavity is hollow and is a framework, and the hollow space of exhaust pump connection exhaust cavity, framework is in be etched
Lose the periphery setting of the placement location of part, the surface of framework is formed with multiple gas vents, exhaust pump by the discharge of exhaust cavity to
Etch the gas around part.
Wherein, exhaust cavity is a rectangular box, and rectangular box includes 4 mutually independent L-type exhaust modules, 4 L-types
The end of exhaust module is bonded to each other to form rectangular box, and 4 L-type exhaust modules are connected to 4 molecular pumps respectively.
Wherein, gas vent is located at the upper surface of framework, and gas vent is distributed in matrix.
Wherein, drain tap is equipped at least partly at gas vent, drain tap adjusts row by controlling opening of valve
The deflation rate of stomata.
Wherein, the surface of gas vent is equipped with air pressure sensing device, the gas that air pressure sensing device passes through induction discharging port surface
Pressure controls the valve opening of drain tap, and then controls the deflation rate of gas vent.
Wherein, exhaust cavity be a rectangular box, rectangular box include 4 mutually independent linear type exhaust modules, 4
The end of linear type exhaust module is bonded to each other to form rectangular box, and 4 linear type exhaust modules connect with 4 molecular pumps respectively
It connects.
Wherein, the shape of gas vent is any one of circle, ellipse, triangle, polygon, square or rectangle.
Wherein, the opening area of gas vent is equal.
Wherein, the section of framework is any one of circle, ellipse, triangle, polygon, square or rectangle.
In order to solve the above technical problems, another technical solution that the application uses is: a kind of dry etching equipment is provided,
Exhaust apparatus including reaction cavity and any description above, exhaust apparatus are located in reaction cavity, the exhaust in exhaust apparatus
Pump one end is connected to exhaust cavity, and the other end is connected to the gas outlet of reaction cavity, and the gas in reaction cavity is discharged.
The beneficial effect of the application is: being in contrast to the prior art, the application provides a kind of exhaust apparatus, exhaust dress
It sets including exhaust pump and exhaust cavity, exhaust cavity is hollow and is a framework, the hollow space of exhaust pump connection exhaust cavity, frame
Body is arranged in the periphery of the placement location of part to be etched, and the surface of framework is formed with multiple gas vents, and exhaust pump passes through discharge chamber
The gas around part to be etched is discharged in body.The application is arranged by that will be vented cavity in the periphery of the placement location of part to be etched,
And framework surface includes multiple gas vents, is vented from exhaust cavity by exhaust pump, so that gas is from part four to be etched
It is uniformly discharged in multiple gas vents in week.The application makes the surrounding Uniform gas flow velocity of part to be etched, keeps etching homogeneity,
And then avoid etching residue.
Detailed description of the invention
Fig. 1 is the overlooking structure diagram of the application exhaust apparatus first embodiment；
Fig. 1 a is the side structure schematic diagram of exhaust apparatus in Fig. 1；
Fig. 1 b is the present invention looks up structural representation of exhaust apparatus in Fig. 1；
Fig. 1 c is the air flow direction schematic diagram of exhaust apparatus in Fig. 1；
Fig. 2 is the overlooking structure diagram of the application exhaust apparatus second embodiment；
Fig. 2 a is the side structure schematic diagram of exhaust apparatus in Fig. 2；
Fig. 2 b is the present invention looks up structural representation of exhaust apparatus in Fig. 2；
Fig. 2 c is the air flow direction schematic diagram of exhaust apparatus in Fig. 2；
Fig. 3 is the schematic diagram of the section structure of one embodiment of the application dry etching equipment.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is based on
Embodiment in the application, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment belongs to the range of the application protection.
The application provides a kind of exhaust apparatus, and exhaust apparatus includes exhaust pump and exhaust cavity, and exhaust cavity is hollow and is
One framework, the hollow space of exhaust pump connection exhaust cavity, framework are arranged in the periphery of the placement location of part to be etched, framework
Surface is formed with multiple gas vents, and the gas around part to be etched is discharged by being vented cavity in exhaust pump.
In order to clearly illustrate the specific structure of the application exhaust apparatus, please refers to Fig. 1, Fig. 1 a and Fig. 1 b, Fig. 1 are these
Apply for the overlooking structure diagram of exhaust apparatus first embodiment；Fig. 1 a is the side structure schematic diagram of exhaust apparatus in Fig. 1；
Fig. 1 b is the present invention looks up structural representation of exhaust apparatus in Fig. 1.
In present embodiment, exhaust apparatus 10 includes exhaust pump 13 and exhaust cavity 11, and exhaust cavity 11 is hollow and is one
Framework, the hollow space of the connection exhaust cavity 11 of exhaust pump 13.Framework is arranged in the periphery of the placement location of part 9 to be etched, frame
The surface of body is formed with multiple gas vents 12, and the gas around part 9 to be etched is discharged by being vented cavity 11 in exhaust pump 13.It is multiple
The hollow space and exterior space of the connection exhaust cavity 11 of gas vent 12.
In present embodiment, exhaust pump 13 be molecular pump, molecular pump be using high-speed rotating rotor MOMENTUM TRANSMISSION to
Gas molecule is allowed to obtain directed velocity, to be compressed, be driven to a kind of vacuum pump taken away after exhaust outlet for prime.Row
The gas around part 9 to be etched is discharged by being vented cavity 11 in air pump 13.
In present embodiment, exhaust pump 13 is four, and is distributed in the quadrangle of rectangular box.In other embodiments,
The number of exhaust pump 13 may be other numbers, need to only be evenly distributed on rectangular box, the application does not make this
It limits.
In present embodiment, the framework of exhaust cavity 11 is rectangular box, and part 9 to be etched is rectangular substrate, rectangular box
Surround part 9 to be etched.In other embodiments, the framework for being vented cavity 11 is also possible to circle, ellipse, triangle, more
Side shape, square or other shapes need to be only matched with the shape of part 9 to be etched so that framework surrounds part 9 to be etched, this Shen
Please this is not construed as limiting.
C refering to fig. 1, Fig. 1 c are the air flow direction schematic diagrames of exhaust apparatus in Fig. 1.In present embodiment, it is vented cavity 11
Part 9 to be etched is surrounded, exhaust cavity 11 includes multiple gas vents 12.When exhaust pump 13 is evacuated from exhaust cavity 11, part 9 to be etched
Suction-operated of the gas by the multiple gas vents 12 of surrounding on surface, uniformly all directions flowing (air-flow flowing around
Direction is as shown in arrow in Fig. 1 c).The quadrangle of part 9 to be etched and the zone gas flow velocity on four sides are identical, 9 area Shang Ge of part to be etched
The etch rate in domain is identical, and etching homogeneity is preferable, and then avoids etching residue.
It is different from the prior art, the application provides a kind of exhaust apparatus, and exhaust apparatus includes exhaust pump and exhaust cavity, row
Air cavity is hollow and is a framework, and the hollow space of exhaust pump connection exhaust cavity, framework is in the placement location of part to be etched
Periphery setting, the surface of framework are formed with multiple gas vents, and the gas around part to be etched is discharged by being vented cavity in exhaust pump.
The application, which passes through, will be vented cavity in the setting of the periphery of the placement location of part to be etched, and framework surface includes multiple gas vents,
It is vented from exhaust cavity by exhaust pump, so that gas is uniformly discharged from multiple gas vents of part surrounding to be etched.
The application makes the surrounding Uniform gas flow velocity of part to be etched, keeps etching homogeneity, and then avoid etching residue.
It please refers to Fig. 2, Fig. 2 a and Fig. 2 b, Fig. 2 is the plan structure signal of the application exhaust apparatus second embodiment
Figure；Fig. 2 a is the side structure schematic diagram of exhaust apparatus in Fig. 2；Fig. 2 b is the present invention looks up structural representation of exhaust apparatus in Fig. 2.
In present embodiment, exhaust apparatus 20 includes exhaust pump 23 and exhaust cavity 21, and exhaust cavity 21 is hollow and is one
Framework, the hollow space of the connection exhaust cavity 21 of exhaust pump 23.Framework is arranged in the periphery of the placement location of part 9 to be etched, frame
The surface of body is formed with multiple gas vents 221, and the gas around part 9 to be etched is discharged by being vented cavity 21 in exhaust pump 23.It is more
The hollow space and exterior space of a connection of gas vent 221 exhaust cavity 21.
In present embodiment, the framework of exhaust cavity 21 is rectangular box, and part 9 to be etched is rectangular substrate, rectangular box
Surround part 9 to be etched.In other embodiments, be vented cavity 21 framework be also possible to it is round, oval or rectangular etc. other
Shape need to be only matched with the shape of part 9 to be etched so that framework surrounds part 9 to be etched, and the application is not construed as limiting this.
In present embodiment, the framework section of exhaust cavity 21 is rectangle, in other embodiments, exhaust cavity 21
Framework section may be that circle, ellipse, triangle, polygon, square or other shapes, the application do not limit this
It is fixed.
In present embodiment, exhaust cavity 21 includes 4 mutually independent L-type exhaust modules, 22,4 L-type exhaust modules
22 end is bonded to each other to form rectangular box, and 4 L-type exhaust modules 22 are connected to 4 exhaust pumps 23 respectively.At another
In embodiment, exhaust cavity 21 includes 4 mutually independent linear type exhaust modules, the end of 4 linear type exhaust modules
It is bonded to each other to form rectangular box, 4 linear type exhaust modules are connected to 4 exhaust pumps 23 respectively.It is mutually indepedent by 4
Exhaust module part 9 to be etched is exhausted, only need to change damaged exhaust module after wherein exhaust module is damaged
, without replacing to entire exhaust cavity 21, saved maintenance cost.Simultaneously as 4 mutually independent exhaust modules point
It is not connected with exhaust pump 23, the gas flow rate of adjustable 9 different zones of part to be etched.In other embodiments, discharge chamber
The framework of body 21 can also be made of the exhaust module of other shapes, can also be made of the exhaust module of different number, such as
Rectangular box is collectively constituted by 4 linear type exhaust modules and 4 L-type exhaust modules, the application is not construed as limiting this.
In present embodiment, exhaust pump 23 is four, and is distributed in the quadrangle of rectangular box.In other embodiments,
The number of exhaust pump 23 may be other numbers, and position is also not necessarily limited to quadrangle, only need to be corresponding with the number of exhaust module,
The application is not construed as limiting this.
In present embodiment, exhaust pump 23 be molecular pump, molecular pump be using high-speed rotating rotor MOMENTUM TRANSMISSION to
Gas molecule is allowed to obtain directed velocity, to be compressed, be driven to a kind of vacuum pump taken away after exhaust outlet for prime.Point
Son pump includes molecular drag pump, turbomolecular pump and composite molecular pump, and molecular drag pump passes through gas molecule and high-speed motion
Rotor collide and obtain momentum, and then gas is driven and is sent to the outlet of pump；Turbomolecular pump leans on high-speed rotating movable vane piece
It cooperates to realize pumping with static fixed blade；Composite molecular pump is by turbine type and towed two kinds of molecules series connection of pumps group
The compound molecular pump of one kind altogether.The type of molecular pump is selected as the case may be, and the application does not limit this
It is fixed.
In present embodiment, gas vent 221 is located at the framework upper surface of exhaust cavity 21, and gas vent 221 is in matrix point
Cloth.Preferably, gas vent 221 surrounds 3 column arrangement of direction point along it in the framework of exhaust cavity 11.In other embodiments
In, gas vent 221 can also be located at the framework side surface of exhaust cavity 11, and the ranks number of gas vent 221 is determined according to the actual situation
Fixed, the application is not construed as limiting this.
In present embodiment, at gas vent 221 be equipped with drain tap 222, drain tap 222 by controlling opening of valve into
And adjust the deflation rate of gas vent 221.In present embodiment, drain tap 222 is equipped on each gas vent 221.At it
In his embodiment, drain tap 222 can also be only set on portion discharge hole 221, and the application is not construed as limiting this.Right
When part 9 to be etched is processed, the aperture of each 222 valve of drain tap is adjusted respectively, and then adjust the region gas
Body throughput adjusts local etching rate, and then improves etching homogeneity, reduces etching residue, realizes that product yield is promoted.
In present embodiment, the surface of gas vent 221 is equipped with air pressure sensing device (not shown), and air pressure sensing device passes through
The air pressure on induction 221 surface of gas vent controls the valve opening of drain tap 222, and then controls the row of gas vent 221
Gas velocity rate.For example, air pressure sensing device senses air pressure beyond setting value or other gas vents on one of gas vent 221
After atmospheric pressure value at 221, the valve opening of drain tap 222 is automatically adjusted, and then control the deflation rate of gas vent 221.
Further, the shape of gas vent 221 is circle, in ellipse, triangle, polygon, square or rectangle
It is any.
Further, the opening area of gas vent 221 is equal.The opening area of gas vent 221 is equal to be can be improved
The convenient degree of valve regulated.In other embodiments, the opening area of gas vent 221 can also be unequal, the application couple
This is not construed as limiting.
Refering to Fig. 2 c, Fig. 2 c is the air flow direction schematic diagram of exhaust apparatus in Fig. 2.In present embodiment, it is vented cavity 21
Part 9 to be etched is surrounded, exhaust cavity 21 includes multiple gas vents 221, and gas vent 221 is equipped with drain tap 222.Exhaust pump 23
When being evacuated from exhaust cavity 21, suction-operated of the gas by the multiple gas vents 221 of surrounding on part 9 to be etched, uniformly to
Surrounding all directions flow (air current flow direction is as shown in arrow in Fig. 2 c), the quadrangle of part 9 to be etched and the region gas on four sides
Body flow velocity is identical, and can adjust the air-flow velocity of gas vent 221,9 area Shang Ge of part to be etched in real time by drain tap 222
The etch rate in domain is uniform, and etching homogeneity is preferable, and then avoids etching residue.
It is different from the prior art, the application provides a kind of exhaust apparatus, and exhaust apparatus includes exhaust pump and exhaust cavity, row
Air cavity is hollow and is a framework, and the hollow space of exhaust pump connection exhaust cavity, framework is in the placement location of part to be etched
Periphery setting, the surface of framework are formed with multiple gas vents, and the gas around part to be etched is discharged by being vented cavity in exhaust pump.
The application, which passes through, will be vented cavity in the setting of the periphery of the placement location of part to be etched, and framework surface includes multiple gas vents,
It is vented from exhaust cavity by exhaust pump, so that gas is uniformly discharged from multiple gas vents of part surrounding to be etched.
The application makes the surrounding Uniform gas flow velocity of part to be etched, keeps etching homogeneity, and then avoid etching residue.
It is the schematic diagram of the section structure of one embodiment of the application dry etching equipment refering to Fig. 3, Fig. 3.
In present embodiment, dry etching equipment 30 includes reaction cavity 31 and exhaust apparatus 32, and exhaust apparatus 32 is located at
In reaction cavity 31.Reaction cavity 31 is treated etch substrate and is performed etching, exhaust apparatus 32 for make substrate quadrangle to be etched and
Flow through equal plasma flow in other regions.Exhaust apparatus 32 is any of the above exhaust apparatus, and details are not described herein by the application.
Exhaust apparatus 32 includes exhaust cavity 321 and exhaust pump 322, and 322 one end of exhaust pump is connected to exhaust cavity 321, the other end and
The gas outlet of reaction cavity 31 is connected to, and the gas in reaction cavity 31 is uniformly discharged.
It is different from the prior art, the application provides a kind of dry etching equipment, including exhaust apparatus, and exhaust apparatus includes row
Air pump and exhaust cavity, exhaust cavity is hollow and is a framework, and the hollow space of exhaust pump connection exhaust cavity, framework is in be etched
Lose the periphery setting of the placement location of part, the surface of framework is formed with multiple gas vents, exhaust pump by the discharge of exhaust cavity to
Etch the gas around part.The application is arranged by that will be vented cavity in the periphery of the placement location of part to be etched, and framework table
Face includes multiple gas vents, is vented from exhaust cavity by exhaust pump, so that gas is from the multiple of part surrounding to be etched
It is uniformly discharged in gas vent.The application makes the surrounding Uniform gas flow velocity of part to be etched, keeps etching homogeneity, and then avoid
Etching residue.
The above is only presently filed embodiments, are not intended to limit the scope of the patents of the application, all to utilize the application
Equivalent structure or equivalent flow shift made by specification and accompanying drawing content is applied directly or indirectly in other relevant technologies
Field similarly includes in the scope of patent protection of the application.
Claims (10)
1. a kind of exhaust apparatus, which is characterized in that including exhaust pump and exhaust cavity, the exhaust cavity is hollow and is a frame
Body, the exhaust pump are connected to the hollow space of the exhaust cavity, and the framework is set in the periphery of the placement location of part to be etched
It sets, the surface of the framework is formed with multiple gas vents, and the part to be etched is discharged by the exhaust cavity in the exhaust pump
The gas of surrounding.
2. exhaust apparatus according to claim 1, which is characterized in that the exhaust cavity is a rectangular box, the square
Shape framework includes 4 mutually independent L-type exhaust modules, and the end of 4 L-type exhaust modules is bonded to each other described in formation
Rectangular box, 4 L-type exhaust modules are connected to 4 molecular pumps respectively.
3. exhaust apparatus according to claim 1, which is characterized in that the gas vent is located at the upper surface of the framework,
And the gas vent is distributed in matrix.
4. exhaust apparatus according to claim 1, which is characterized in that be equipped with exhaust valve at at least partly described gas vent
Door, the drain tap adjust the deflation rate of the gas vent by controlling opening of valve.
5. exhaust apparatus according to claim 4, which is characterized in that the surface of the gas vent is equipped with air pressure induction dress
It sets, the air pressure sensing device controls the valve opening of the drain tap by incuding the air pressure of the discharging port surface
System, and then control the deflation rate of the gas vent.
6. exhaust apparatus according to claim 1, which is characterized in that the exhaust cavity is a rectangular box, the square
Shape framework includes 4 mutually independent linear type exhaust modules, and the end of 4 linear type exhaust modules is bonded to each other with shape
At the rectangular box, 4 linear type exhaust modules are connect with 4 molecular pumps respectively.
7. exhaust apparatus according to claim 1, which is characterized in that the shape of the gas vent is round, ellipse, three
Any one of angular, polygon, square or rectangle.
8. exhaust apparatus according to claim 1, which is characterized in that the opening area of the gas vent is equal.
9. exhaust apparatus according to claim 1, which is characterized in that the section of the framework is round, ellipse, triangle
Any one of shape, polygon, square or rectangle.
10. a kind of dry etching equipment, which is characterized in that including any exhaust dress of reaction cavity and claim 1-9
It sets, the exhaust apparatus is located in the reaction cavity, and exhaust pump one end in the exhaust apparatus is connected to exhaust cavity, separately
One end is connected to the gas outlet of the reaction cavity, and the gas in the reaction cavity is discharged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810690779.2A CN109087869A (en) | 2018-06-28 | 2018-06-28 | Exhaust apparatus and dry etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810690779.2A CN109087869A (en) | 2018-06-28 | 2018-06-28 | Exhaust apparatus and dry etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109087869A true CN109087869A (en) | 2018-12-25 |
Family
ID=64834815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810690779.2A Pending CN109087869A (en) | 2018-06-28 | 2018-06-28 | Exhaust apparatus and dry etching equipment |
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| Country | Link |
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| CN (1) | CN109087869A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112080733A (en) * | 2019-06-14 | 2020-12-15 | 东泰高科装备科技有限公司 | Tail gas discharging device and vacuum coating system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102368465A (en) * | 2011-09-20 | 2012-03-07 | 嘉兴科民电子设备技术有限公司 | Etching chamber of dry method etching hard inorganic material substrate ICP etching machine |
| CN203112919U (en) * | 2013-02-27 | 2013-08-07 | 京东方科技集团股份有限公司 | Gas phase processing device |
| CN108172531A (en) * | 2017-12-20 | 2018-06-15 | 武汉华星光电半导体显示技术有限公司 | Etching apparatus |
-
2018
- 2018-06-28 CN CN201810690779.2A patent/CN109087869A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102368465A (en) * | 2011-09-20 | 2012-03-07 | 嘉兴科民电子设备技术有限公司 | Etching chamber of dry method etching hard inorganic material substrate ICP etching machine |
| CN203112919U (en) * | 2013-02-27 | 2013-08-07 | 京东方科技集团股份有限公司 | Gas phase processing device |
| CN108172531A (en) * | 2017-12-20 | 2018-06-15 | 武汉华星光电半导体显示技术有限公司 | Etching apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112080733A (en) * | 2019-06-14 | 2020-12-15 | 东泰高科装备科技有限公司 | Tail gas discharging device and vacuum coating system |
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Application publication date: 20181225 |