CN102610698A - Conveying carrier plate for manufacturing process of solar silicon wafers - Google Patents
Conveying carrier plate for manufacturing process of solar silicon wafers Download PDFInfo
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- CN102610698A CN102610698A CN2012100875343A CN201210087534A CN102610698A CN 102610698 A CN102610698 A CN 102610698A CN 2012100875343 A CN2012100875343 A CN 2012100875343A CN 201210087534 A CN201210087534 A CN 201210087534A CN 102610698 A CN102610698 A CN 102610698A
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- support plate
- silicon chip
- conveying carrier
- silicon wafers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to the technical field of plasma equipment for the manufacturing process of solar silicon wafers, in particular to a conveying carrier plate for the manufacturing process of solar silicon wafers. The conveying carrier plate comprises conveying carrier plates and silicon wafers, wherein the silicon wafers are arranged on the conveying carrier plates in arrays; a circle of conveying guide structures are arranged on the periphery of the conveying carrier plates; a silicon wafer placing groove array is arranged on the surface of each of the conveying carrier plates; the silicon wafer placing groove array is formed by separated transversal ribs and longitudinal ribs; air extraction cracks are arranged on the transversal ribs or the longitudinal ribs; four air pressure balancing holes are arranged in each silicon wafer placing groove; the conveying carrier plates are connected with one another in a complementary way; and a lower boss of one conveying carrier plate is overlapped with an upper boss of the next conveying carrier plate. According to the conveying carrier plate for the manufacturing process of solar silicon wafers, through the cracks, air can be extracted from the peripheries of the silicon wafers rather than from the edges of the carrier plates, in this way, air extraction between silicon wafers is uniform; in addition, the complementary connection ensures that the carrier plates can run evenly and steadily.
Description
Technical field
The present invention relates to the plasma apparatus technical field that the solar silicon wafers manufacturing process is used, especially a kind of solar silicon wafers manufacturing process is with the transmission support plate.
Background technology
Silicon chip of solar cell has a series of production processes in battery manufacturing process, dry plasma etch is wherein arranged, plasma film forming (PECVD) etc.In order to increase the treating capacity of silicon chip in the unit interval, generally accomplish with large-area treatment technology.That is to say that a lot of silicon chips (125x125mm or 156x156mm) can be placed on the support plate simultaneously.The equipment of handling this silicon chip produces plasma with plate electrode usually.Support plate can static state be placed on one of them electrode, after technology is accomplished, takes out (great-jump-forward) again, and support plate also can transmit through ion source process island (chain type) continuously.
For the silicon chip (etching or plated film) that obtains uniform treatment, need uniform distribution of gas usually, it comprises that gas evenly gets into (showering) and evenly extraction.The uniform entering of gas can design on another plate of parallel electrode plate, and this battery lead plate has equally distributed aperture, and gas evenly gets into each aperture and can realize.Gas is extracted out normally around support plate, because gas must be gone to the edge from the centre, so necessarily has a concentration gradient.Along with support plate becomes big (ability of single treatment silicon chip increases), this concentration gradient just increases, and the uniformity of handling silicon chip is with regard to variation.
Summary of the invention
In order to overcome the deficiency of existing technology, the invention provides a kind of solar silicon wafers manufacturing process with the transmission support plate.
The technical solution adopted for the present invention to solve the technical problems is: a kind of solar silicon wafers manufacturing process is with the transmission support plate; Comprise and carry support plate and silicon chip; The silicon chip array is emitted on to be carried on the support plate; Described conveying support plate periphery is provided with a circle and carries guide frame, carries the support plate surface to be provided with silicon chip standing groove array, and described silicon chip standing groove array is separated by horizontal bar and longitudinal rib; Have the crack of bleeding on horizontal bar or the longitudinal rib, be equipped with 4 air equalizer openings in each silicon chip standing groove; Adopt complementary connection between the described conveying support plate.
According to another embodiment of the invention, comprise further that the connected mode between the described conveying support plate is last and carries the lower convex platform of support plate superimposed with the convex platform of a back conveying support plate.
The invention has the beneficial effects as follows; The present invention can extract gas out through crack around silicon chip, need not extract out from the support plate edge; Making like this bleeds between each piece silicon chip is uniformly, and complementary in addition connection has guaranteed that support plate can balanced, operation reposefully.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is that silicon chip of the present invention is at the distribution map of carrying on the support plate;
Fig. 2 is that the present invention carries support plate upper surface silicon chip standing groove structure chart;
Fig. 3 is the find time structure chart of slit of silicon chip of the present invention;
Fig. 4 is the complementary johning knot composition between the support plate of the present invention;
Among the figure 1, carry support plate, 2, silicon chip, 3, silicon chip standing groove array, 4, the silicon chip standing groove, 5, the crack of bleeding, 6, air equalizer opening, 7, carry guide frame, 9, horizontal bar, 10, longitudinal rib, 11, lower convex platform, 12, convex platform.
Embodiment
Like Fig. 1, Fig. 2, shown in Figure 3, a kind of solar silicon wafers manufacturing process comprises and carries support plate 1 and silicon chip 2 with the transmission support plate; Silicon chip 2 arrays are emitted on to be carried on the support plate 1; Described conveying support plate 2 peripheries are provided with a circle and carry guide frame 7, carry support plate 1 surface to be provided with silicon chip standing groove array 3, and described silicon chip standing groove array 3 is separated by horizontal bar 9 and longitudinal rib 10; Have the crack 5 of bleeding on horizontal bar 9 or the longitudinal rib 10, be equipped with 4 air equalizer openings 6 in each silicon chip standing groove 4; Adopt complementary connection between the described conveying support plate 1.Described support plate main body adopts aluminum alloy materials, graphite material, or ceramic material carries out precision optical machinery processing, and fine sand and degree of depth Passivation Treatment are taked to spray in the surface.The silicon chip of placing 2, specification can be 125x125mm or 156x156mm.Described conveying support plate 2 peripheries are provided with a circle, and to carry guide frame 7, its purpose be to let the support plate can be continuously by transmission, and support plate carries guide frame 7 can guarantee that support plate can balanced, even running.Silicon chip standing groove 4 has guaranteed that silicon chip is not superimposed with each other in production process.Longitudinal rib 10 or horizontal bar 9 also can optionally have the crack of bleeding, can be on standing groove four limit muscle openings all, also may be limited on two muscle of contraposition, through crack, gas can be extracted out around silicon chip, need not extract out from the support plate edge.Make like this that to bleed between each piece silicon chip be uniform.The air equalizer opening 6 of silicon chip load/unload, broken when having guaranteed the quick load/unload of silicon chip because of producing negative pressure.Another design inventive point of this conveying support plate is the complementary connection between support plate, can avoid influencing the uniformity of air-flow, has guaranteed that support plate can balanced, operation reposefully.
As shown in Figure 4, the connected mode between the described conveying support plate 1 is last and carries the lower convex platform 11 of support plate 1 to carry the convex platform 12 of support plate 1 superimposed with back one, makes the gas can not be from extracting out between them.The matte that the inhomogeneous air-flow that has produced between the support plate before and after having prevented is processed silicon chip is inhomogeneous.In addition, support plate front and back close proximity when plasma dry method making herbs into wool cavity also can increase production capacity.
Below be a concrete application example of the present invention: in than the dry method making herbs into wool system of science and technology too (product type " too shuttle "), support plate is that the aluminium sheet of 1M * 1M is processed.Have 36 silicon chip standing groove arrays on it, each silicon chip groove is 157x157mm, and groove depth is that the such groove position of 0.5mm. can not be shifted silicon chip inside.
Muscle 1mm between silicon chip and the silicon chip.On muscle, offer the wide crack of 1mm.The length of crack is 150mm, near the length of silicon chip.Can be on four limit muscle openings all, also can be limited on two muscle of contraposition.It below the support plate chamber vacuum sky of bleeding.Like this, air-flow just gets into the cavity sky of bleeding through the crack on the support plate.Though support plate is very big, bleeds and still can pass through support plate equably.
Through above design, the uniformity of silicon chip and the own etching of silicon chip can reach 3%.Invention that need not be such, air-flow is taken away from the support plate edge, and the etching homogeneity between the silicon chip is 10%.
Above content is to combine concrete preferred implementation to the further explain that the present invention did, and can not assert that practical implementation of the present invention is confined to these explanations.For the those of ordinary skill of technical field under the present invention, under the prerequisite that does not break away from the present invention's design, its framework form can be flexible and changeable, can the subseries product.Just make some simple deduction or replace, all should be regarded as belonging to the scope of patent protection that the present invention is confirmed by claims of being submitted to.
Claims (2)
1. a solar silicon wafers manufacturing process is with the transmission support plate; Comprise and carry support plate (1) and silicon chip (2); Silicon chip (2) array is emitted on to be carried on the support plate (1), it is characterized in that, described conveying support plate (2) periphery is provided with a circle and carries guide frame (7); Carry support plate (1) surface to be provided with silicon chip standing groove array (3); Described silicon chip standing groove array (3) is separated by horizontal bar (9) and longitudinal rib (10), has the crack of bleeding (5) on horizontal bar (9) or the longitudinal rib (10), is equipped with 4 air equalizer openings (6) in each silicon chip standing groove (4); Adopt complementary connection between the described conveying support plate (1).
2. solar silicon wafers manufacturing process according to claim 1 is with the transmission support plate; It is characterized in that the connected mode between the described conveying support plate (1) is last and carries the lower convex platform (11) of support plate (1) to carry the convex platform (12) of support plate (1) superimposed with back one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100875343A CN102610698A (en) | 2012-03-29 | 2012-03-29 | Conveying carrier plate for manufacturing process of solar silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100875343A CN102610698A (en) | 2012-03-29 | 2012-03-29 | Conveying carrier plate for manufacturing process of solar silicon wafers |
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| CN102610698A true CN102610698A (en) | 2012-07-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012100875343A Pending CN102610698A (en) | 2012-03-29 | 2012-03-29 | Conveying carrier plate for manufacturing process of solar silicon wafers |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867850A (en) * | 2014-02-20 | 2015-08-26 | 上海理想万里晖薄膜设备有限公司 | Heterojunction solar cell support plate |
| CN106505022A (en) * | 2017-01-03 | 2017-03-15 | 江西比太科技有限公司 | Support plate and the manufacture of solar cells equipment using the support plate |
| CN106531678A (en) * | 2017-01-05 | 2017-03-22 | 江西比太科技有限公司 | Silicon wafer gripping device and solar cell production equipment of using same |
| CN107546166A (en) * | 2017-09-29 | 2018-01-05 | 四川英发太阳能科技有限公司 | Etching automation blanking guider |
| CN113770122A (en) * | 2021-09-13 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | Cleaning method of PECVD (plasma enhanced chemical vapor deposition) equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101748378A (en) * | 2008-12-15 | 2010-06-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film-forming carrier board and production method of solar batteries |
| CN201660146U (en) * | 2010-02-05 | 2010-12-01 | 罗源 | Multi-piece extraction device of tissue packaging machine |
| CN101924057A (en) * | 2009-06-10 | 2010-12-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Carrier plate and continuous plasma coating device |
| CN102031498A (en) * | 2010-12-17 | 2011-04-27 | 中微半导体设备(上海)有限公司 | Substrate support seat for III-V group thin film growth reaction chamber, reaction chamber thereof and process treatment method |
| CN202549900U (en) * | 2012-03-29 | 2012-11-21 | 常州比太科技有限公司 | Transmission carrier plate for solar silicon chip manufacturing process |
-
2012
- 2012-03-29 CN CN2012100875343A patent/CN102610698A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101748378A (en) * | 2008-12-15 | 2010-06-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film-forming carrier board and production method of solar batteries |
| CN101924057A (en) * | 2009-06-10 | 2010-12-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Carrier plate and continuous plasma coating device |
| CN201660146U (en) * | 2010-02-05 | 2010-12-01 | 罗源 | Multi-piece extraction device of tissue packaging machine |
| CN102031498A (en) * | 2010-12-17 | 2011-04-27 | 中微半导体设备(上海)有限公司 | Substrate support seat for III-V group thin film growth reaction chamber, reaction chamber thereof and process treatment method |
| CN202549900U (en) * | 2012-03-29 | 2012-11-21 | 常州比太科技有限公司 | Transmission carrier plate for solar silicon chip manufacturing process |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867850A (en) * | 2014-02-20 | 2015-08-26 | 上海理想万里晖薄膜设备有限公司 | Heterojunction solar cell support plate |
| CN106505022A (en) * | 2017-01-03 | 2017-03-15 | 江西比太科技有限公司 | Support plate and the manufacture of solar cells equipment using the support plate |
| CN106531678A (en) * | 2017-01-05 | 2017-03-22 | 江西比太科技有限公司 | Silicon wafer gripping device and solar cell production equipment of using same |
| CN107546166A (en) * | 2017-09-29 | 2018-01-05 | 四川英发太阳能科技有限公司 | Etching automation blanking guider |
| CN113770122A (en) * | 2021-09-13 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | Cleaning method of PECVD (plasma enhanced chemical vapor deposition) equipment |
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Application publication date: 20120725 |