CN202359196U - Gas flow control device for metal organic chemical vapor deposition (MOCVD) reaction chamber - Google Patents
Gas flow control device for metal organic chemical vapor deposition (MOCVD) reaction chamber Download PDFInfo
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- CN202359196U CN202359196U CN2011203681514U CN201120368151U CN202359196U CN 202359196 U CN202359196 U CN 202359196U CN 2011203681514 U CN2011203681514 U CN 2011203681514U CN 201120368151 U CN201120368151 U CN 201120368151U CN 202359196 U CN202359196 U CN 202359196U
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Abstract
The utility model provides a gas flow control device for a metal organic chemical vapor deposition (MOCVD) reaction chamber. The device is used for controlling the flow of gas which is distributed to different areas of a reaction chamber in an MOCVD process, and the gas is provided by a metal organic (MO) gas resource. The device is characterized by at least comprising a first channel and a second channel, wherein the MO gas source is communicated with a first area and a second area of the reaction chamber at least through the first channel and the second channel respectively; a pressure controller (PC) is arranged on the first channel, and is used for controlling gas which passes through the first channel; and a flow controller (MFC) is arranged on the second channel, and is used for controlling gas which passes through the second channel. The flow of the gas of different areas in the reaction chamber is controlled by arranging the pressure controller and the flow controller on different channels respectively, so that substances which are deposited in the reaction chamber are uniform. Meanwhile, the pressure of the MO gas resource can also be effectively controlled.
Description
Technical field
The utility model relates to metal organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition; MOCVD) device; Particularly, relate to and be used to control metal organic source in the MOCVD device (hereinafter to be referred as the MO source) gas flow control device of pressure.
Background technology
In the manufacturing processed of semiconductor devices, need usually to use the certain process program on solid substrate, to form thin film layer.The substrate that has deposited thin film layer is widely used in microprocessor, photoelectric device, communication equipment and other some devices.The technology that is used for deposit thin film layers on solid substrate is particularly important for semi-conductor industry.In such process, MOCVD is a way relatively more commonly used, the composition that it can keep obtaining uniform thin film and control film easily.
In MOCVD technology, the effect of the stable directly decision MOCVD of MO source pressure is very important for MOCVD technology.Because MO source gas is that a large amount of current-carrying gas are taken the MO molecule out of container through the MO compound of liquid; Get into reaction chamber with current-carrying gas; The boil-off rate of liquid is influenced by several factors, such as temperature, liquid what, factor such as gas flow rate, so it is very unstable to feed the common flow of source of the gas of MOCVD reaction chamber; Can there be fluctuation up and down, so can't accurately measure the flow of MO source of the gas always.Because reactant gas flow and temperature distribution is different in the MOCVD reaction chamber, more even in order to make in the reaction chamber sedimentary material, need through multiplexer channel simultaneously in reaction chamber different zones MO source gas is provided.The gas flow of regulating different zones obtains final deposition effect uniformly.So just need gas flow control device to control the gas flow of different passages.Yet, because the gaseous tension in MO source is lower, so and the whole flow of the less MO source of the gas of pressure difference in passage in pressure in the MOCVD reaction chamber and MO source less.Because MOCVD device itself can often cause the MO source to produce unexpected pressure drop, this all makes existing gas flow control device can't realize the excellent control to MO source pressure simultaneously.
For example; The utility model name is called in the one Chinese patent application of " a kind of air-channel system for preparing in the gallium nitride film device " (one Chinese patent application number: 200810028855.X); Employing multichannel MFC (Mass Flow Controller has been proposed; Mass flow controller) control the scheme of gas ratio in the different passages, but this scheme is based upon under the prerequisite of measurement gas upstream pressure exactly, and such hypothesis is false usually; Because the instability of flow of upper reaches MO source of the gas; If upstream flowrate has changed again or the variation of another road flow of parallel connection when adopting a plurality of MFC to control the multipath gas flow can to cause a MFC in regulation process, also not reach target flow, cause readjusting again and obtain new target flow, net result is that the flow in the multiplexer channel is forever in fluctuation; And then can cause whole M OCVD system unstable, pilot-gas pressure and can produce fluctuation exactly.Therefore, such scheme can't solve the gaseous tension that unexpected pressure drop and MO source take place in the MO source well and cross the low pressure-controlling problem of bringing.So industry need a kind of can be at this low discharge and have and realize the distribute device of control of stable air-flow in the gas distribution control system of unstable flow source of the gas.
The utility model content
To defective of the prior art, the purpose of the utility model be through with different passages that the different zones of MOCVD reaction chamber connects on the gas flow control device that pressure controller and flow director provide a kind of MOCVD of being used for reaction chamber is set respectively.
According to an aspect of the utility model, a kind of gas flow control device of the MOCVD of being used for reaction chamber is provided, its gas that is used to control the MO source of the gas and is provided is assigned to the flow of reaction chamber different zones, it is characterized in that, comprises at least:
First channel and second passage, said MO source of the gas at least through said first channel and said second passage respectively with the first area and the second area UNICOM of reaction chamber,
Wherein, comprise a pressure controller (PC) on the said first channel, it is used to control the gas through in the said first channel,
Comprise a flow director (MFC) on the said second passage, it is used to control the gas through in the said second passage.
Preferably, said each passage also is provided with a valve.
Preferably, also comprise on the said first channel one with the placed in-line under meter of said pressure controller (Mass Flow Metor, MFM).
Preferably, said gas flow control device at least also comprises third channel, and said MO source of the gas also through said third channel and reaction chamber the 3rd regional UNICOM, wherein, comprises a flow director (MFC) on the said third channel.
Preferably, said gas flow control device at least also comprises four-way, and said MO source of the gas also through said four-way and reaction chamber the 4th regional UNICOM, wherein, comprises a flow director (MFC) on the said four-way.
The utility model is through being separately positioned on pressure controller and flow director on the different passages that are connected with reaction chamber, thereby realizes the control to different zones gas flow in the reaction chamber, thereby makes that sedimentary material is more even in the reaction chamber.Simultaneously, adopt the present technique scheme, can also control the pressure of MO source of the gas effectively.
Description of drawings
Through reading the detailed description of non-limiting example being done with reference to following accompanying drawing, it is more obvious that the other features, objects and advantages of the utility model will become:
Fig. 1 illustrates according to first embodiment of the utility model, is used for the structural representation of the gas flow control device of MOCVD;
Fig. 2 illustrates according to second embodiment of the utility model, is used for the structural representation of the gas flow control device of MOCVD; And
Fig. 3 illustrates according to the 3rd embodiment of the utility model, is used for the structural representation of the gas flow control device of MOCVD.
Embodiment
Fig. 1 illustrates according to first embodiment of the utility model, is used for the structural representation of the gas flow control device of MOCVD.As shown in Figure 1, it will be appreciated by those skilled in the art that in reaction chamber 1; The object that is deposited is handled through metal organic chemical vapor deposition; MO source of the gas in the said reaction chamber is from each passage that is connected with said reaction chamber 1, and for example in the present embodiment, the MO source of the gas flows in the said reaction chamber 1 through first channel 51, second passage 52; Wherein, said first channel 51 is connected with reaction chamber 1 respectively with said second passage 52.Preferably; In order to realize control to different zones gas flow in the reaction chamber; Said first channel 51 connects the first area (among the figure not label) of said reaction chamber 1, and said second passage 52 connects the second area (among the figure not label) of said reaction chamber 1, does not repeat them here.
Further; It will be apparent to those skilled in the art that; In the present embodiment, comprise a pressure controller 3 on the said first channel 51, it is used to control the gas through in the said first channel 51; Comprise a flow director 21 on the said second passage 52, it is used to control the gas through in the said second passage 52.It will be apparent to those skilled in the art that; Through said flow director 21; It can be controlled through the MO gas in the said second passage 52, for example when confirming to need to pass through the flow of MO gas in the said second passage 52, through the setting to said flow director 21; Can be so that the flow velocity of the MO gas in the said second passage 52 reach a fixed speed, thus guarantee that the flow velocity that arrives the MO gas in the said reaction chamber 1 through said second passage 52 is a constant flow rate.Similarly; In the embodiment shown in fig. 3; Through adjusting, setting, can not repeat them here so that MO gas reaches different flow rate in the different passages such as second passage 52, third channel 53, four-way 54 to flow director 21, flow director 22 and flow director 23.Particularly, it will be appreciated by those skilled in the art that control to flow director, regulating can be with reference to existing techniques in realizing; For example at least can with reference to " flow control system---control automatically professional project teaching study course three " (Cai Xizhong chief editor, Chemical Industry Press, publication time: on August 1st, 2006; ISBN:9787502589318); It is perhaps all right that (law is write, Chemical Industry Press, publication time: on August 1st, 2003 with reference to " flow measurement instrument applicating skill "; ISBN:9787502546663), do not repeat them here.
Further, it will be appreciated by those skilled in the art that in the present embodiment, also comprise a pressure controller 3 on the said first channel 51, can control the pressure of gas in the said first channel 51 through this pressure controller 3.Preferably,, can set, so that the pressure in the said first channel 51 reaches a fixed standard said pressure controller 3 according to needed pressure in the said first channel 51.It will be apparent to those skilled in the art that; This pressure controller 3 has the characteristic that the control downstream pressure reaches constant pressure; Therefore, after the shunting of MO source of the gas through second passage 52 dominant discharge from the instability of flow at the upper reaches, the flow rate fluctuation of MO source of the gas has been embodied in the first channel 51.The flow rate fluctuation meeting brings the air pressure fluctuation in first channel 51 pipelines, just can control the air-flow in the said first channel 51 simultaneously through the air pressure of controlling said first channel 51.And because the variation of air pressure is along with the variation accumulation of flow; Bigger than normal as such as a bit of time flow occurring greater than MV 5%; It is less than normal in MV 5% to occur flow subsequently again; The fluctuation of same time period internal gas pressure is much smaller than the fluctuating range of this flow: the flow ascent stage maybe be only less than 2% air pressure fluctuation amplitude, the ratio of downcomer is identical also to be less than 2%.And it is basicly stable at starting position at two past time periods back air pressure.Only when the lasting departure of air-flow is longer, just need the control pressure unit to make the air pressure in unit downstream get back to MV, This move has also reduced the flow that flows through pressure controller simultaneously.So come dominant discharge to have lag-effect with gas pressure regulator, and have the effect of ironing fluctuating range.Utilize pressure controller 3 just in time can realize control in the field of the utility model, though make its output gas flow of gas have to fluctuate that the MV of flow still can be through pressure controller 3 controls to the unsettled air-flow of flow.More particularly; Those skilled in the art can be with reference to the setting of existing techniques in realizing to said pressure controller 3; For example at least can (Luo Zhen writes, petroleum industry press, publication time: on May 1st, 2008 with reference to " design of petrochemical industry process controller and application "; ISBN:9787502164515), do not repeat them here.
Fig. 2 illustrates according to second embodiment of the utility model, is used for the structural representation of the gas flow control device of MOCVD.Embodiment illustrated in fig. 2ly can be understood that a variant embodiment illustrated in fig. 1.Particularly, on basis embodiment illustrated in fig. 1, on each passage, also increased a valve, promptly increased by first valve 41, on said second passage 52, increased by second valve 42 at said first channel 51.The effect of said valve 42 is to make in case of necessity that said second passage 52 is airtight, preferably, in not needing said second passage, when said reaction chamber 1 stream MO gas, said valve 42 then can be set be closing condition.Further preferably, said valve 42 can be one-way cock, can not reflux to guarantee the gas in the reaction chamber 1, does not repeat them here.Similarly, the effect of the effect of said valve 41 and valve 42 is similar, does not repeat them here.
Fig. 3 illustrates according to the 3rd embodiment of the utility model, is used for the structural representation of the gas flow control device of MOCVD.On Fig. 1 and basis embodiment illustrated in fig. 2; Third channel 53 and four-way 54 have been increased; Similar with said second passage 52, said third channel 53 is connected with the 3rd zone of said reaction chamber 1, and MO gas flows into the 3rd zone of said reaction chamber 1 through said third channel 53; Said four-way 54 is connected with the 4th zone of said reaction chamber 1, and MO gas flows into the 4th zone of said reaction chamber 1 through said four-way 54.Further; Said third channel 53 is provided with flow director 22; Similarly; Through adjusting, can controlling flow cross the gas in the said third channel 53, thereby can control the flow velocity that flows to the MO gas in the 3rd zone in the said reaction chamber 1 through said third channel 53 said flow director 22.Similarly, also be provided with flow director 23 on the said four-way 54, it is used to regulate the flow velocity that flows to the four-range MO gas in the said reaction chamber 1 through said four-way 54, does not repeat them here.
Further, on the said third channel 53 of above-mentioned increase, also be provided with a valve 43, it is used for making where necessary said third channel 53 to close, and its effect can realize with reference to above-mentioned valve 42 shown in Figure 2, not repeat them here.
Further; Extremely embodiment illustrated in fig. 3 with reference to above-mentioned Fig. 1; It will be appreciated by those skilled in the art that according to different needs, for example according to the needs of different zones MO gas flow rate in the said reaction chamber 1; The passage that the different zones of a plurality of and said reaction chamber 1 is connected can be set; And preferably have at least in these passages to be provided with on the passage flow director is set on a pressure controller, the rest channels, said passage number can be set according to concrete needs, and this does not influence the essence of the utility model content.
Further, it will be appreciated by those skilled in the art that on above-mentioned different passages valve can be set that valve can be set, the essence that this does not influence the utility model content does not repeat them here yet.
Further, it will be appreciated by those skilled in the art that according to difference enforcement needs; The position of said passage can change, and for example preferably, said passage can be distributed in the top of said reaction chamber 1 equably; And in a variant; Said reaction chamber also can distribute alternately at the different sites of said reaction chamber 1, the essence that this does not influence the utility model content does not repeat them here.
Further, it will be appreciated by those skilled in the art that in the embodiment shown in fig. 3 that the said flow director 23 that is provided with on the said four-way 54 can (Mass Flow Meter MFM) substitutes by a mass-flow gas meter.Use the benefit of said mass-flow gas meter to be at least and can in the said MO gas flow rate of control, to measure flow velocity through the MO gas in the said four-way 54; Thereby realize accurate control to the MO gas flow rate; Those skilled in the art can realize the setting to said mass-flow gas meter with reference to above-mentioned books at least, do not repeat them here.
Further; It will be apparent to those skilled in the art that; The technical scheme that the utility model provided focus on describing in the reaction chamber, with passage that reaction chamber is connected in the control problem of gas flow; So do not describe in detail for other correlation technique details, can reference about this part content those skilled in the art
In conjunction with the foregoing description and variant; It will be apparent to those skilled in the art that; If on different passages, only adopt mass flow controller (MFC); Because the pressure transient of the MO source of the gas at the upper reaches of each passage can cause the MO bleed pressure in the reaction chamber also unstable, cross the low pressure-controlling problem of bringing so can't solve the gaseous tension that unexpected pressure drop and MO source take place in the MO source well.And through a pressure controller (PC) is set at least one passage; Again with other passages on mass flow controller (MFC) match; Then can control the flow of MO source of the gas in the reaction chamber and the pressure of the interior MO source of the gas of reaction chamber effectively, thereby realize the purpose of present technique scheme.
More than the specific embodiment of the utility model is described.It will be appreciated that the utility model is not limited to above-mentioned specific implementations, those skilled in the art can make various distortion or modification within the scope of the claims, and this does not influence the flesh and blood of the utility model.
Claims (5)
1. gas flow control device that is used for the MOCVD reaction chamber, its gas that is used to control the MO source of the gas and is provided is assigned to the flow of reaction chamber different zones, it is characterized in that, comprises at least:
First channel and second passage, said MO source of the gas at least through said first channel and said second passage respectively with the first area and the second area UNICOM of reaction chamber,
Wherein, comprise a pressure controller on the said first channel, it is used to control the gas through in the said first channel,
Comprise a flow director on the said second passage, it is used to control the gas through in the said second passage.
2. gas flow control device according to claim 1 is characterized in that, said each passage also is provided with a valve.
3. gas flow control device according to claim 1 and 2 is characterized in that, also comprises one and the placed in-line under meter of said pressure controller on the said first channel.
4. gas flow control device according to claim 1 and 2 is characterized in that, at least also comprises third channel, and said MO source of the gas also through said third channel and reaction chamber the 3rd regional UNICOM, wherein, comprises a flow director on the said third channel.
5. gas flow control device according to claim 1 and 2 is characterized in that, at least also comprises four-way, and said MO source of the gas also through said four-way and reaction chamber the 4th regional UNICOM, wherein, comprises a flow director on the said four-way.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203681514U CN202359196U (en) | 2011-09-29 | 2011-09-29 | Gas flow control device for metal organic chemical vapor deposition (MOCVD) reaction chamber |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011203681514U CN202359196U (en) | 2011-09-29 | 2011-09-29 | Gas flow control device for metal organic chemical vapor deposition (MOCVD) reaction chamber |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065431A (en) * | 2018-07-27 | 2018-12-21 | 上海华力集成电路制造有限公司 | Oxide gasification finish device |
| CN111501027A (en) * | 2019-12-27 | 2020-08-07 | 清华大学无锡应用技术研究院 | Method for uniformly controlling flow field of chemical vapor deposition equipment |
| CN111676468A (en) * | 2020-06-10 | 2020-09-18 | 长飞光纤光缆股份有限公司 | Optical fiber prefabricated part, multimode optical fiber and preparation method thereof |
| CN114121585A (en) * | 2020-08-26 | 2022-03-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and gas supply method |
-
2011
- 2011-09-29 CN CN2011203681514U patent/CN202359196U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065431A (en) * | 2018-07-27 | 2018-12-21 | 上海华力集成电路制造有限公司 | Oxide gasification finish device |
| CN111501027A (en) * | 2019-12-27 | 2020-08-07 | 清华大学无锡应用技术研究院 | Method for uniformly controlling flow field of chemical vapor deposition equipment |
| CN111501027B (en) * | 2019-12-27 | 2022-01-21 | 清华大学无锡应用技术研究院 | Method for uniformly controlling flow field of chemical vapor deposition equipment |
| CN111676468A (en) * | 2020-06-10 | 2020-09-18 | 长飞光纤光缆股份有限公司 | Optical fiber prefabricated part, multimode optical fiber and preparation method thereof |
| CN114121585A (en) * | 2020-08-26 | 2022-03-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and gas supply method |
| CN114121585B (en) * | 2020-08-26 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and gas supply method |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120801 |
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| CX01 | Expiry of patent term |