CN202099382U

CN202099382U - Gas control device for metallorganic chemical vapor deposition equipment

Info

Publication number: CN202099382U
Application number: CN2010202847344U
Authority: CN
Inventors: 李刚; 常依斌
Original assignee: SHANGHAI LANBAO PHOTOELECTRIC MATERIALS CO Ltd
Current assignee: SHANGHAI LANBAO PHOTOELECTRIC MATERIALS CO Ltd
Priority date: 2010-08-09
Filing date: 2010-08-09
Publication date: 2012-01-04
Anticipated expiration: 2020-08-09

Abstract

The utility model discloses a gas control device for metallorganic chemical vapor deposition equipment, which mainly comprises mass-flow controllers MFC-1 and MFC-2, a pressure controller PC-1, diaphragm valves CA-1, CA-2, CA-3, CA-4 and CA-5, one-way valves CV-1 and CV-2, a mass flow meter MFM-1, an H2 (hydrogen) supply pipeline (1), an N2 (nitrogen) supply pipeline (2), an NH3 (ammonia) supply pipeline (3), an H2 controlled pipeline (4), an N2 controlled pipeline (5), an NH3 controlled pipeline (6) and an M gas supply pipeline (7). In the conventional method, a pressure controller with a mass flow meter is arranged at an N2 inlet of the metallorganic chemical vapor deposition equipment, and the high flow requirement cannot be met under limitation of the technique of parts. The pressure controller and the mass flowmeter are connected in tandem, and thereby the problem of high flow is solved, and flexible switching between pressure control and mass flow control for the gas supply pipeline (7) is realized. To guarantee on potential safety hazards occurring to the H2 pipeline and the NH3 pipeline, purging of N2 is convenient to achieve for the H2 pipeline under control of the CV-1 and the CA-4, and purging of N2 is convenient to achieve for the NH3 pipeline under control of the CV-2 and the CA-5.

Description

A kind of gas control equipment of metal-organic chemical vapor deposition equipment

Technical field:

The utility model relates to semiconductor devices manufacturing technology field, is absorbed in the gas control equipment of metal-organic chemical vapor deposition equipment especially.

Background technology:

Metal-organic chemical vapor deposition equipment is the good technique that is fit to growing semiconductor illuminating LED material epitaxy sheet.It also is a kind of industrialized economical and practical technology; Its growing principle is: on the substrate of a heating proper temperature; The gaseous compound that contains III and V group element has the substrate surface that is transported to of control, grows the thin film deposition material of specific components, specific thicknesses, particular electrical and optical parametric.

H2, N2 and NH3 need accurate control pressure or mass rate as three kinds of topmost gases in the metal-organic chemical vapor deposition equipment working process.In order to improve the production efficiency of metal-organic chemical vapor deposition equipment, the reaction chamber volume of metal-organic chemical vapor deposition equipment is increasing, and gas mass flow also needs further to increase in the consequent reaction process.Generally at H2, in the combined pipeline of N2 and NH3, the N2 pipeline is according to the importance of back level mass rate or pressure, installation quality flow director or pressure controller in pipeline, even some place is installed as the pressure controller of band mass flowmeter.But select the switching of controlling quality flow or pressure in the time of all can't solving the metal-organic chemical vapor deposition equipment different states.Because the pressure controller self-technique of band mass flowmeter is limit, can't use occasion in addition at big flow.

In metal-organic chemical vapor deposition equipment distribution pipeline, in pipeline, possibly produce detrimentally affect to reaction process by residual air in addition, needs repeatedly purge with the gas of pipeline.But there is certain potential safety hazard in this, and H2 is an inflammable gas, and NH3 is a toxic gas, and can pollute environment.

Summary of the invention:

The flexible switching that N2 line pressure and mass rate were controlled when the utility model had solved the control of metal-organic chemical vapor deposition equipment gas has also solved the purging of H2 pipeline and NH3 pipeline in addition.

This device mainly comprises mass flow controller MFC-1, MFC2, pressure controller PC-1, diaphragm valve CA-1, CA-2, CA-3, CA-4, CA-5; Vacuum breaker CV-1, CV-2, mass flowmeter MFM-1, H2 supply air line (1); N2 supply air line (2), NH3 supply air line (3), the controlled pipeline of H2 (4); The controlled pipeline of N2 (5), the controlled pipeline of NH3 (6), supply air line (7).Diaphragm valve CA-1, mass flow controller MFC-1 form H2 control pipeline; Diaphragm valve CA-2, mass flowmeter MFM-1, pressure controller PC-1 form N2 control pipeline; Diaphragm valve CA-3, mass flow controller MFC-2 form NH3 control pipeline; N2 can pass through CV-1, CA-4 gets into the H2 pipeline, and N2 can pass through CV-2, CA-5 gets into the NH3 pipeline, and H2, N2, NH3 after regulating according to controlled target compile formation supply air line (7).

Wherein, the pressure controller in the N2 pipeline separates with mass flowmeter.

The one-way passage of forming by a diaphragm valve CA-4, vacuum breaker CV-1 and pipeline between H2 pipeline and the N2 pipeline, thus N2 is to the purging of H2 pipeline.

The one-way passage of forming by a diaphragm valve CA-5, vacuum breaker CV-2 and pipeline between NH3 pipeline and the N2 pipeline, thus N2 is to the purging of NH3 pipeline.

CA-1, CA-2, CA-3 control the break-make on H2, N2 and NH3 gas inlet pipe road respectively; MFC-1, MFC-2 control the mass rate of H2 and NH3 pipeline gas respectively.In the working process,, then pressure set points is sent into pressure controller PC-1, the mass rate of mass flowmeter MFM-1 monitoring N2 pipeline if supply air line (7) needs to keep certain pressure.If supply air line (7) needs the mass rate of control N2, then the pipeline system is further regulated pressure controller PC-1 through the value of obtaining mass flowmeter MFM-1, and roughly process is: less than normal when mass rate, then increase the set(ting)value of PC-1; Otherwise, then reduce the set(ting)value of PC-1.Thereby can realize working as metal-organic chemical vapor deposition equipment as required, realize the control of supply air line (7) pressure or N2 mass rate flexibly.In this process, the break-make of H2 pipeline and flow can be realized through CA-1 and MFC-1; The NH3 pipeline is then realized through CA-3 and MFC-2.

When H2 supply air line (1) and the controlled pipeline of H2 (4) need to purge or metal-organic chemical vapor deposition equipment when being in the state that does not need H2; Can close CA-1; Open CA-2 and CA-4; And vacuum breaker CV-1 opens under the effect of pressure reduction, thereby the N2 of N2 supply air line (2) accomplishes the purging to the H2 pipeline, and flow can be through MFC-1 control.NH3 supply air line (3) and the controlled pipeline of NH3 (6) also are same reasons, and difference is to open CA-2 and CA-5 through closing CA-3, and vacuum breaker CV-2 opens, and the flow of pipeline is through MFC-2 control.

Description of drawings:

Fig. 1 is the utility model principle schematic

Embodiment:

As shown in Figure 1; The N2 pipeline adopts pressure controller (PC) and the placed in-line form of mass flowmeter (MFM); When the metal-organic chemical vapor deposition equipment supply air line needs pressure-controlling, directly set the goal pressure of PC on the N2 pipeline, this moment, MFM can provide the mass rate data of N2; When the metal-organic chemical vapor deposition equipment supply air line need be set the N2 mass rate, can the data that MFM gathers be imported as the target of PC, thus the control purpose of realization N2 mass rate.Owing to do not adopt the pressure controller of band mass flowmeter here, so do not receive the restriction of the big flow of these component.

Safety-problems during in addition for the purging that solves H2 and NH3 pipeline and non-operating state has increased a diaphragm valve and vacuum breaker respectively between N2 and H2 pipeline, N2 and NH3 pipeline.When H2 or NH3 need purge or close, open and the N2 pipeline between diaphragm valve, vacuum breaker is automatic conducting under the effect of pressure reduction, thereby realizes being in H2 and the NH3 pipeline N2 of safety non-toxic.

Claims

1. the gas control equipment of a metal-organic chemical vapor deposition equipment comprises mass flow controller MFC-1, MFC2, pressure controller PC-1; Diaphragm valve CA-1, CA-2, CA-3, CA-4, CA-5, vacuum breaker CV-1, CV-2, mass flowmeter MFM-1; H2 supply air line (1), N2 supply air line (2), NH3 supply air line (3); The controlled pipeline of H2 (4), the controlled pipeline of N2 (5), the controlled pipeline of NH3 (6); Supply air line (7), diaphragm valve CA-1, mass flow controller MFC-1 are formed H2 control pipeline, and diaphragm valve CA-2, mass flowmeter MFM-1, pressure controller PC-1 form N2 control pipeline; Diaphragm valve CA-3, mass flow controller MFC-2 form NH3 control pipeline; N2 can pass through CV-1, CA-4 gets into the H2 pipeline, and N2 can pass through CV-2, CA-5 gets into the NH3 pipeline, and H2, N2, NH3 after regulating according to controlled target compile formation supply air line (7).

2. the gas control equipment of a kind of metal-organic chemical vapor deposition equipment as claimed in claim 1 is characterized in that the pressure controller in the N2 pipeline separates with mass flowmeter.

3. the gas control equipment of a kind of metal-organic chemical vapor deposition equipment as claimed in claim 1; It is characterized in that the one-way passage formed by a diaphragm valve CA-4, vacuum breaker CV-1 and pipeline between H2 pipeline and the N2 pipeline, thereby N2 is to the purging of H2 pipeline.

4. the gas control equipment of a kind of metal-organic chemical vapor deposition equipment as claimed in claim 1; It is characterized in that the one-way passage formed by a diaphragm valve CA-5, vacuum breaker CV-2 and pipeline between NH3 pipeline and the N2 pipeline, thereby N2 is to the purging of NH3 pipeline.