CN103388177A - Growing device and method of semiconductor film - Google Patents
Growing device and method of semiconductor film Download PDFInfo
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- CN103388177A CN103388177A CN2013103150260A CN201310315026A CN103388177A CN 103388177 A CN103388177 A CN 103388177A CN 2013103150260 A CN2013103150260 A CN 2013103150260A CN 201310315026 A CN201310315026 A CN 201310315026A CN 103388177 A CN103388177 A CN 103388177A
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- growth
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000012159 carrier gas Substances 0.000 claims abstract description 56
- 239000007788 liquid Substances 0.000 claims abstract description 46
- 239000007789 gas Substances 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 12
- 230000004907 flux Effects 0.000 claims description 8
- 238000010792 warming Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 4
- 230000005587 bubbling Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000011261 inert gas Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 37
- 239000000463 material Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
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Abstract
The invention discloses a growing device and method of a semiconductor film. The growing device is suitable for the growth of the semiconductor film by using a chemical vapor deposition process. The growing device of the semiconductor film comprises a carrier gas device, a liquid source device, a growing chamber, a bypass and a vacuum system which are connected into a whole through pipelines according to a certain logic relationship, wherein all the pipelines can be independently opened or closed. The liquid source device comprises a plurality of source bottles, and is arranged in an inert gas control cabinet, the source bottles are arranged in a thermostatic bath, and a liquid-state source is conveyed to the growing chamber through using a carrier gas bubbling method, and is subjected to a chemical reaction in the growing chamber to synthesize the required semiconductor film. A carrier gas directly enters the growing chamber through a main pipeline, and an air source in the growing chamber is controlled through opening or closing the bypass so that the purposes of controlling the growth of the film and balancing the pressure of the growing chamber in the switching process are achieved.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of chemical Vapor deposition process (Chemical Vapor Deposition, CVD) Semiconductor Film Growth equipment and growth method thereof.
Background technology
Semiconductor film material is a major domain of modern semiconductor technology, and its development is very rapid.The preparation of semiconductor film be unable to do without growing apparatus.Developed so far tens of kinds of Semiconductor Film Growth devices and growth method thereof, wherein, chemical gaseous phase depositing process has the main stream approach that purity is high, controlled, the advantage such as can implement has on a large scale become Semiconductor Film Growth.It is very complicated that the modern commerce chemical vapor deposition unit has become, and device itself is very expensive, can deposit the micro-structure semiconductor thin-film material of various complexity on such larger commercial settings, as super crystal lattice materials such as AlGaN/GaN, InGaAs/GaAs, this preparation for semiconductor photoelectronic device has great importance.On the other hand, do not need the semiconductor film of fine structure for some, as emerging semi-conductor ultrathin membrane materials such as II-VI, IV-VI two-dimensional layer film crystal material, transition metal oxides, if still adopt existing larger commercial settings growth, high cost seems, and be difficult for disposing, be badly in need of the new Semiconductor Film Growth device of development and corresponding growth method and carry out the growth of these emerging semi-conductor ultrathin membranes.
Summary of the invention
In order to address the above problem, the invention provides a kind of Semiconductor Film Growth device and growth method thereof, can provide the Apparatus and method for support for the preparation of the semiconductor films such as most of two-dimensional layer film crystal materials, transition metal oxide.
According to an aspect of the present invention, it provides a kind of Semiconductor Film Growth equipment, comprising: carrier gas device, liquid source device, growth room, bypass and vacuum system connect to an integral body by pipeline by certain logical relation between these parts; And every pipeline can independently open or close.This Semiconductor Film Growth equipment is applicable to chemical vapor deposition method.
Wherein, described carrier gas device is connected with the 8th pipeline with the first, the 7th by after hand valve, check valve and under meter successively, wherein the first pipeline further is connected with the 3rd pipeline with second pipe, and the 7th pipeline further is connected with growth room, and the 8th pipeline further is connected with bypass; The inlet end of described liquid source device is connected with the 3rd pipeline, and exit end is connected with the 4th pipeline; The 4th pipeline is connected with the 6th pipeline with the 5th pipeline, and the 6th pipeline further is connected with bypass; Described the 5th device for cleaning pipeline is crossed the 7th pipeline and is connected to growth room; Described growth room is connected with vacuum system, pump.
Wherein, the logical relation that described pipeline connects is: the first pipeline, the 7th pipeline and the 8th device for cleaning pipeline are crossed the first four-way node and are connected with carrier gas device, the first pipeline, second pipe and the 3rd device for cleaning pipeline are crossed the first threeway node and are linked together, second pipe, the 3rd pipeline and the 4th device for cleaning pipeline are crossed the second threeway node and are linked together, the 5th pipeline is crossed the 3rd threeway node with the 7th device for cleaning pipeline and is connected with growth room, and the 6th pipeline is crossed the 4th threeway node with the 8th device for cleaning pipeline and is connected with bypass.
According to a further aspect in the invention, it also provides a kind of and has utilized above-mentioned Semiconductor Film Growth device to carry out the method for Semiconductor Film Growth, and it comprises the steps:
Step 4, carry out following several operation successively: close second pipe, open the 3rd pipeline, keep this state to the scheduled time; Close the 6th pipeline, open the 5th pipeline, keep this state to the scheduled time; Close the 5th pipeline, open the 6th pipeline, keep this state to the scheduled time; Close the 3rd pipeline, open second pipe, keep this state to the scheduled time;
Than general large scale business chemical vapor depsotition equipment, the present invention adopts the logical organization that can expand, be easy to dispose, its reliable in structure, simple to operate, a plurality of liquid source devices can be installed as required, also can unload as required the liquid source device, thereby reach the purpose of installing or unloading liquid source.Each liquid source device has independently constant temperature and air-channel system, can be independently, side by side by carrier gas device carrier gas out, through Bubbling method, carry and enter growth room and carry out the growth of semiconductor film, reach the purpose that increases efficiency, improves growth quality and reduce costs.
Description of drawings
Fig. 1 is the structural representation of Semiconductor Film Growth equipment in the preferred embodiment of the present invention;
Fig. 2 is liquid source device and the structural representation in the rare gas element housing thereof in the present invention;
Fig. 3 is the structural representation of Semiconductor Film Growth equipment in another preferred embodiment of the present invention;
Fig. 4 is the concrete schematic diagram data that uses in the present invention when the Semiconductor Film Growth method is carried out Semiconductor Film Growth.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
The structural representation of the Semiconductor Film Growth equipment that provides in the preferred embodiment of the present invention is provided Fig. 1.As shown in Figure 1, this Semiconductor Film Growth equipment is applicable to chemical vapor deposition method, described Semiconductor Film Growth equipment comprises carrier gas device, liquid source device, growth room, bypass, vacuum system and pump, and by pipeline, by certain logical relation, connects to an integral body.Wherein, bypass is used for vent gas, and vacuum system is used for keeping the vacuum tightness with the growth regulation chamber, and pump is used for extracting the gas of growth room.
Wherein, carrier gas device is used for the circulation carrier gas, carrier gas can be connected with three pipelines 101,107,108 after successively by hand valve, check valve and under meter (MFC) after out through carrier gas device, wherein pipeline 101 further is connected and is connected with pipeline with pipeline 102, pipeline 107 further is connected with growth room, and pipeline 108 further is connected with bypass; The inlet end of liquid source device is connected with pipeline 103, and exit end is connected with pipeline 104; Growth room is connected with pump with vacuum system, bypass.Described pipeline logical relation is: pipeline 101,107 and 108 inlet ends link together by a four-way node 1, pipeline 101,102 and 103 links together by a threeway node 2, pipeline 102,103 and 104 links together by a threeway node 3, pipeline 104,105 and 106 links together by a threeway node 4, pipeline 105 and 107 links together with growth room by a threeway node 5, and pipeline 106 and 108 links together by a threeway node 6 and bypass.And four-way node 1, threeway node 2, threeway node 3, threeway node 4, threeway node 5 and threeway node 6 can independently be opened, be closed.Threeway node 7 links together vacuum system and bypass and pump.The withstand voltage scope of source bottle of described liquid source device is 1Pa-2E5Pa, and the thermostatic bath temperature range of described liquid source device is-50 ℃-300 ℃, and the withstand voltage scope in described growth room is 10Pa to 1E5Pa, and temperature range is room temperature to 1200 ℃.
The carrier gas of described carrier gas device circulation is the mixed gas of rare gas element or rare gas element and reducing gas or the mixed gas of rare gas element and oxidizing gas.The carrier gas flux of the carrier gas flux of described pipeline 107, pipeline 108 equates, the carrier gas flux of pipeline 101 is that one of the percentage of carrier gas flux of pipeline 107 is to 1/5th.
The present invention also provides a kind of Semiconductor Film Growth method, comprises the steps:
Open pump, open threeway node 7, make pump can extract the pipeline that is connected with threeway node 7, set the pressure of vacuum system and bypass;
Close successively pipeline 103, pipeline 105, make pump can not extract pipeline 103, pipeline 105;
Pass into carrier gas by four-way node 1;
Growth room's pressure, to specified pressure, is warming up to assigned temperature, keeps this state to the scheduled time;
Close pipeline 105, opening conduits 106, make that to enter bypass from the carrier gas out of liquid source bottle emptying, keeps this state to the scheduled time;
Growth room's pressure is to specified pressure, and temperature, to assigned temperature, is kept this state to the scheduled time;
Growth room's temperature, to room temperature, is kept this state to the scheduled time;
Close four-way node 1, carrier gas is closed;
Close successively pipeline 101, pipeline 102, pipeline 104, pipeline 106, make pump can not extract pipeline 101, pipeline 102, pipeline 104, pipeline 106;
Close successively pipeline 107, pipeline 108, make pump can not extract pipeline 107, pipeline 108;
Close successively vacuum system, bypass, threeway node 7 and pump.
Fig. 2 shows source bottle and the structural representation in the rare gas element housing thereof of liquid source device in the present invention.
As shown in Figure 2, described liquid source device comprises thermostatic bath 208, source bottle 207, inlet 205, inlet 206, carrier gas inlet pipeline 203, carrier gas outlet conduit 204 and bypass duct 202.Described liquid source is positioned in the bottle of source, and described source bottle 207 is placed in thermostatic bath 208 to remain on steady temperature.Described rare gas element housing comprises cabinet 209, inert gas entrance pipeline 210, outlet conduit 211, bypass duct 212 and glass port 213.Described source bottle 207, cabinet 209 are that the corrosion-resistant stainless steel of thick 3 millimeters forms, and described glass port 213 is that the toughened glass of thick 8 millimeters forms.
Fig. 3 shows the structural representation of Semiconductor Film Growth equipment in another preferred embodiment of the present invention.As shown in Figure 3, described Semiconductor Film Growth equipment comprises five groups of separate carrier gas devices, three groups of separate liquid sources and corresponding bypass, growth room and vacuum system.Described liquid source device comprises three source bottles, and it is arranged in a rare gas element housing, and wherein the source bottle is arranged in thermostatic bath.
Described five groups independently carrier gas device and three groups independently the mode of connection of liquid source device be described below: during growth, can use any one or two kinds or several carrier gas in five groups of separate carrier gas devices, it or they both as passing into the main carrier gas of growth room, directly by main pipe line, enter growth room, also as passing into the liquid source bottle, be used for the carrier gas of carrying liquid source, by the carrier gas Bubbling method, liquid source be delivered to growth room.Can use simultaneously any one or two kinds or three kinds of liquid sources in three groups of separate liquid source devices.For example, adopt H
2Carrier gas device, with one H
2Pass into growth room, with 3 gangs of H
2Enter growth room after passing into respectively three groups of separate liquid source bottles and carrying liquid source, and carry out the synthetic required semiconductor film of chemical reaction in growth room.Carrier gas device is connected with bypass with growth room, liquid source device, can reach by opening and closing the threeway node purpose of switch growth room and bypass, and then control growth room's source of the gas, to reach the purpose of controlling balanced growth chamber pressure in film growth and handoff procedure.Wherein carrier gas can be H
2, N
2, Ar, O
2, CH
4In a kind of; Perhaps H
2Mixed gas with Ar; Perhaps N
2Mixed gas with Ar; Perhaps H
2And CH
4Mixed gas; Perhaps Ar and CH
4Mixed gas.The load volume scope that passes into growth room and bypass is 100sccm to 1000sccm, and the load volume scope that passes into the source bottle is 1sccm to 200sccm.The described source withstand voltage scope of bottle is 1Pa-2E5Pa, and described thermostatic bath temperature range is-50 ℃-300 ℃, and the withstand voltage scope in described growth room is 10Pa to 1E5Pa, and temperature range is room temperature to 1200 ℃.
Fig. 4 shows the concrete schematic diagram data while using Semiconductor Film Growth method provided by the invention to carry out the growing semiconductor film.
As shown in Figure 4, in conjunction with Fig. 3, further illustrate, at first open pump, stable afterwards with Ar and H
2Mixed gas as passing into the carrier gas of growth room, Ar and H
2Ratio be 8: 2, the flow of mixed gas is 1000sccm, setting pressure is 200Pa.The carrier gas that passes into bypass and three source bottles is Ar, and flow is respectively 1000sccm, 200sccm, 100sccm and 50sccm, and pressure is respectively 200Pa, 100Pa, 100Pa and 80Pa.The temperature of source bottle 1, source bottle 2 and source bottle 3 is respectively 100 ℃, 100 ℃ and 70 ℃.Carrier gas is flowed out from the source bottle, can carry liquid source.At this moment, the carrier gas that will carry liquid source by switch threeway node is undertaken emptying by pump through bypass, and purpose is to make liquid source be in holding state.Growth room is warming up to 900 ℃ with the temperature rise rate of 10 ℃/minute, stablizes after 10 minutes and be warming up to 1100 ℃ of growth temperatures in 20 minutes, purpose is stable in order to be heated up in growth room, can be owing to heating up too fast or other reason causes growth room's temperature fluctuation.Then the carrier gas that will carry liquid source is switched to growth room from bypass by switch threeway node, continues 10 minutes, to carry out chemical vapor deposition growth semiconductor film crystalline material.The carrier gas that to carry finally liquid source is switched to bypass from growth room by switch threeway node, by pump, is undertaken emptying.Growth room is lowered the temperature in the mode of naturally cooling, close successively carrier gas device, liquid source device, vacuum system, bypass and pump after room temperature.
With reference to the exemplary description of aforementioned the present invention, those skilled in the art can clearly know the present invention and have the following advantages:
1, Semiconductor Film Growth equipment provided by the invention, integratedly be provided with a plurality of independently liquid source devices, and each liquid source device can install easily and unload, and overcome on the whole complicated, the expensive limitation of growth apparatus in the prior art; Improve the efficiency of growth, reduced energy consumption and cost.
2, Semiconductor Film Growth equipment provided by the invention, its described pipeline logical relation is reasonable, and every pipeline can open or close independently, to reach the purpose of controlling the growing semiconductor film.
3, in addition, Semiconductor Film Growth method provided by the invention, by a series of rationally reliable switch pipe operations, each source gas that controllably will grow enters or leaves growth room, therefore, separate between source of the gas, can not harass, thereby ensured efficiency and the controllability of Semiconductor Film Growth, also be conducive to obtain simultaneously high-quality thin-film material.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (11)
1. Semiconductor Film Growth equipment, it comprises: carrier gas device, liquid source device, growth room, bypass and vacuum system connect to an integral body by pipeline by certain logical relation between these parts; And every pipeline can independently open or close.
2. Semiconductor Film Growth equipment as claimed in claim 1, is characterized in that, described liquid source device comprises a plurality of liquid source bottles, and carrier gas device is a plurality of, and described a plurality of liquid source bottles, a plurality of carrier gas device and growth room interconnect.
3. Semiconductor Film Growth equipment as claimed in claim 1, it is characterized in that, described carrier gas device is connected with the 8th pipeline with the first, the 7th by after hand valve, check valve and under meter successively, wherein the first pipeline further is connected with the 3rd pipeline with second pipe, the 7th pipeline further is connected with growth room, and the 8th pipeline further is connected with bypass; The inlet end of described liquid source device is connected with the 3rd pipeline, and exit end is connected with the 4th pipeline; The 4th pipeline is connected with the 6th pipeline with the 5th pipeline, and the 6th pipeline further is connected with bypass; Described the 5th device for cleaning pipeline is crossed the 7th pipeline and is connected to growth room; Described growth room is connected with vacuum system, pump.
4. Semiconductor Film Growth equipment as claimed in claim 3, it is characterized in that, the logical relation that described pipeline connects is: the first pipeline, the 7th pipeline and the 8th device for cleaning pipeline are crossed the first four-way node and are connected with carrier gas device, the first pipeline, second pipe and the 3rd device for cleaning pipeline are crossed the first threeway node and are linked together, second pipe, the 3rd pipeline and the 4th device for cleaning pipeline are crossed the second threeway node and are linked together, the 5th pipeline is crossed the 3rd threeway node with the 7th device for cleaning pipeline and is connected with growth room, and the 6th pipeline is crossed the 4th threeway node with the 8th device for cleaning pipeline and is connected with bypass.
5. Semiconductor Film Growth equipment as claimed in claim 4, is characterized in that, described four-way node and threeway node all can independently open and close.
6. Semiconductor Film Growth equipment as claimed in claim 1, is characterized in that, described vacuum system is connected with pump with bypass by the threeway node.
7. Semiconductor Film Growth equipment as claimed in claim 1, it is characterized in that, described liquid source device comprises source bottle, thermostatic bath and associated component, described liquid source is positioned in the bottle of source, described source bottle is placed in thermostatic bath, the described source withstand voltage scope of bottle is 1Pa-2E5Pa, and described thermostatic bath temperature range is-50 ℃-300 ℃.
8. Semiconductor Film Growth equipment as claimed in claim 1, is characterized in that, the withstand voltage scope in described growth room is 10Pa to 1E5Pa, and temperature range is room temperature to 1200 ℃.
9. one kind is utilized Semiconductor Film Growth device as claimed in claim 4 to carry out the method for Semiconductor Film Growth, and it comprises the steps:
Step 1, unlatching pump, open the 4th threeway node that connects growth room, pump and vacuum system, sets the pressure of vacuum system and bypass;
Step 2, open the 6th pipeline, the 4th pipeline and second pipe successively; Close successively the 3rd pipeline and the 5th pipeline; Open successively the 8th pipeline, the 7th pipeline and the first pipeline;
Step 3, open the first four-way node and pass into carrier gas; Growth room's pressure, to specified pressure, is warming up to assigned temperature, keeps this state to the scheduled time;
Step 4, carry out following several operation successively: close second pipe, open the 3rd pipeline, keep this state to the scheduled time; Close the 6th pipeline, open the 5th pipeline, keep this state to the scheduled time; Close the 5th pipeline, open the 6th pipeline, keep this state to the scheduled time; Close the 3rd pipeline, open second pipe, keep this state to the scheduled time;
Step 5, growth room's pressure are to specified pressure, and temperature, to assigned temperature, is kept this state to the scheduled time; Growth room's temperature, to room temperature, is kept this state to the scheduled time;
Step 6, close the first four-way node; Close successively the first pipeline, second pipe, the 4th pipeline, the 6th pipeline, the 7th pipeline, the 8th pipeline; Close successively vacuum system, bypass, the 4th threeway node and pump.
10. Semiconductor Film Growth method as claimed in claim 9, is characterized in that, described carrier gas is the mixed gas of rare gas element or rare gas element and reducing gas or the mixed gas of rare gas element and oxidizing gas.
11. Semiconductor Film Growth method as claimed in claim 9, is characterized in that, the carrier gas flux of the carrier gas flux of described the 7th pipeline, the 8th pipeline equates, the carrier gas flux of the first pipeline is that one of the percentage of carrier gas flux of the 7th pipeline is to 1/5th.
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| CN201310315026.0A CN103388177B (en) | 2013-07-25 | 2013-07-25 | A kind of Semiconductor Film Growth device and growth method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107400920A (en) * | 2016-05-19 | 2017-11-28 | 中国科学院微电子研究所 | A kind of preprocess method for being used to grow single crystal orientation zinc oxide |
| CN106362423B (en) * | 2016-09-26 | 2019-04-16 | 中国电子科技集团公司第四十八研究所 | A kind of liquid source vaporising device |
| CN110777428A (en) * | 2019-09-23 | 2020-02-11 | 北京北方华创微电子装备有限公司 | Gas transportation system |
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|---|---|---|---|---|
| CN102776490A (en) * | 2011-05-10 | 2012-11-14 | 东京毅力科创株式会社 | Gas supply apparatus, thermal treatment apparatus, gas supply method and thermal treatment method |
| CN203530429U (en) * | 2013-07-25 | 2014-04-09 | 中国科学院半导体研究所 | Semiconductor film growth equipment |
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2013
- 2013-07-25 CN CN201310315026.0A patent/CN103388177B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102776490A (en) * | 2011-05-10 | 2012-11-14 | 东京毅力科创株式会社 | Gas supply apparatus, thermal treatment apparatus, gas supply method and thermal treatment method |
| CN203530429U (en) * | 2013-07-25 | 2014-04-09 | 中国科学院半导体研究所 | Semiconductor film growth equipment |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107400920A (en) * | 2016-05-19 | 2017-11-28 | 中国科学院微电子研究所 | A kind of preprocess method for being used to grow single crystal orientation zinc oxide |
| CN107400920B (en) * | 2016-05-19 | 2019-10-29 | 中国科学院微电子研究所 | It is a kind of for growing the preprocess method of single crystal orientation zinc oxide |
| CN106362423B (en) * | 2016-09-26 | 2019-04-16 | 中国电子科技集团公司第四十八研究所 | A kind of liquid source vaporising device |
| CN110777428A (en) * | 2019-09-23 | 2020-02-11 | 北京北方华创微电子装备有限公司 | Gas transportation system |
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| CN103388177B (en) | 2016-02-24 |
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Effective date of registration: 20231027 Address after: No. 18 Fenghuang South Road, High tech Zone, Yancheng City, Jiangsu Province, 224000 Patentee after: JIANGSU HI-PRINT ELECTROMECHANICAL SCIENCE & TECHNOLOGY CO.,LTD. Address before: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Patentee before: INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES |