CN105386122A - Inlet regulating assembly and gas flow distribution regulating apparatus of silicon epitaxy reaction chamber - Google Patents
Inlet regulating assembly and gas flow distribution regulating apparatus of silicon epitaxy reaction chamber Download PDFInfo
- Publication number
- CN105386122A CN105386122A CN201510678674.1A CN201510678674A CN105386122A CN 105386122 A CN105386122 A CN 105386122A CN 201510678674 A CN201510678674 A CN 201510678674A CN 105386122 A CN105386122 A CN 105386122A
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- Prior art keywords
- air inlet
- inlet
- inlet adjustment
- regulating
- venting hole
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention discloses an inlet regulating assembly and a gas flow distribution regulating apparatus of a silicon epitaxy reaction chamber. The inlet regulating assembly comprises a main inlet valve, an inlet regulating body, an inlet flange and a plurality of regulating valves. The inlet regulating body is mounted on the inlet flange. An inlet cavity in communication with the main inlet valve is disposed within the inlet regulating body. Exhaust holes corresponding to the regulating valves individually are provided in the inlet flange from inside to outside. The exhaust holes is spaced uniformly and arranged in column. The exhaust holes and the inlet cavity are communicated via a buffering and pressure equalizing cavity. A regulating member of the regulating valves extends into the buffering and pressure equalizing cavity, and can be away from or close to an inlet end of the exhaust holes. The beneficial effects of the present invention are that the buffering and pressure equalizing cavity of the inlet regulating assembly allows gas to be buffered and pressure to be equalized; the regulating valves can regulate and control an amount of inlet gas entering into the exhaust holes and a flow rate of the inlet gas; and the inlet regulating assembly and the gas flow distribution regulating apparatus have good adaptability. In addition, the inlet regulating assembly provides a closed channel for the inlet process gas to avoid leakage.
Description
Technical field
The present invention relates to silicon epitaxy conversion unit technical field, particularly relate to a kind of air inlet adjustment assembly and air flow method setting device of silicon epitaxy reaction chamber.
Background technology
Epitaxy technique is not only and will be grown one deck and the on all four thin layer of substrate material crystalline network at substrate surface, also will adulterate to epitaxial film, forms P type or N-type active layer.Si epitaxy technique at high temperature carries out, and takes insulation, provision for thermal insulation, and epitaxial growth rate and gas flow rate are closely related, and under certain technological temperature, epitaxy layer thickness and uniform doping mainly affect by the factor such as gas flow rate, even.
In prior art, there is following technical problem in Si epitaxial reactor: the poor stability of reactant gases in (1) reaction chamber, can not meet even requirement; (2) epitaxial device Zhong Ge road reactant gases will enter reaction chamber by filling line or enter pump line through emptying pipeline, and the pressure of the pressure and emptying gas circuit that inject gas circuit is difficult to maintain balance; (3) leakage rate of pipeline is higher, cannot ensure the purity of gas in transport process.
Summary of the invention
The technical problem to be solved in the present invention overcomes the deficiencies in the prior art, provides air inlet adjustment assembly and the air flow method setting device of the silicon epitaxy reaction chamber that a kind of airflow stability is good, gas velocity is adjustable.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of air inlet adjustment assembly of silicon epitaxy reaction chamber, comprise air inlet main valve, air inlet adjustment body, inlet flange and multiple variable valve, described air inlet adjustment body is installed on inlet flange, the inlet chamber be communicated with air inlet main valve is provided with in described air inlet adjustment body, described inlet flange is offered and variable valve venting hole one to one from inside to outside, described venting hole interval is even, permutation is arranged, described venting hole all presses chamber to be communicated with being cushioned by one between inlet chamber, the regulating part of described variable valve stretch into buffering all to press in chamber and can away from or near the inlet end of venting hole.
Further improvement as technique scheme:
Described air inlet adjustment body is installed on the upper surface of inlet flange, the regulating part of described variable valve extends to the top of air inlet adjustment body, multiple described variable valve is arranged along the side permutation of air inlet adjustment body, and the outlet side of multiple described venting hole extends to the side of inlet flange and aligns one by one with the variable valve of top.
Described air inlet adjustment body is installed on the upper surface of inlet flange, the regulating part of described variable valve extends to the top of air inlet adjustment body, multiple described variable valve is arranged along the side permutation of air inlet adjustment body, and the outlet side of multiple described venting hole extends to the side of inlet flange and aligns one by one with the variable valve of top.
Described variable valve is needle-valve.
A kind of air flow method setting device, it comprises three above-mentioned air inlet adjustment assemblies, three air inlet adjustment assemblies adjoin successively along the permutation direction of venting hole, three groups of venting holes become a permutation horizontal arrangement, three bufferings all press chamber to be all communicated with, the quantity that the venting hole that the quantity that middle one group of venting hole is arranged is greater than both sides is arranged, and the distance between two adjacent groups venting hole is greater than the spacing distance often organizing venting hole self.
Middle air inlet adjustment assembly is main air inlet adjustment assembly, the air inlet adjustment assembly of both sides is additional-air inlet adjusting part, the inlet flange of described main air inlet adjustment assembly, additional-air inlet adjusting part is one-body molded, and described main air inlet adjustment assembly, additional-air inlet adjusting part share same buffering and all press chamber.
Compared with prior art, the invention has the advantages that:
The air inlet adjustment assembly of silicon epitaxy reaction chamber of the present invention, its buffering all presses chamber to make gas buffer, pressure uniform, and the adjustable control of variable valve enters air input and the flow velocity of venting hole, and adaptability is good; And this air inlet adjustment assembly is the process gas entered provides airtight passage, avoid leaking.
Air flow method setting device of the present invention, comprise three above-mentioned air inlet adjustment assemblies, air inlet adjustment assembly in the middle of it can spray the main process gas flow of one level, the air inlet adjustment assembly ejection horizontal auxiliary gas stream of both sides, main process gas flow is clipped in the middle by two strands of horizontal auxiliary gas streams, makes the laminar flow that main air stream remains stable, balanced in the horizontal direction; In addition, main process gas flow, substreams good uniformity, speed is adjustable, No leakage.
Accompanying drawing explanation
Fig. 1 is the structural representation of the air inlet adjustment assembly of silicon epitaxy reaction chamber of the present invention.
Fig. 2 is the structural representation of air flow method setting device of the present invention.
Fig. 3 is the main TV structure schematic diagram of Fig. 2.
In figure, each label represents:
1, air inlet main valve; 2, air inlet adjustment body; 3, inlet flange; 4, variable valve; 5, main air inlet adjustment assembly; 6,7 additional-air inlet adjusting parts; 20, inlet chamber; 23, buffering all presses chamber; 30, venting hole.
Embodiment
Fig. 1 shows the embodiment of the air inlet adjustment assembly of a kind of silicon epitaxy reaction chamber of the present invention, comprise air inlet main valve 1, air inlet adjustment body 2, inlet flange 3 and multiple variable valve 4, air inlet adjustment body 2 is installed on inlet flange 3, the inlet chamber 20 be communicated with air inlet main valve 1 is provided with in air inlet adjustment body 2, inlet flange 3 is offered and variable valve 4 venting hole 30 one to one from inside to outside, venting hole 30 interval is even, permutation is arranged, being cushioned by one between venting hole 30 with inlet chamber 20 all presses chamber 23 to be communicated with, this buffering all presses chamber 23 to be opened in the junction of air inlet adjustment body 2 and inlet flange 3, the regulating part of variable valve 4 stretch into buffering all to press in chamber 23 and can away from or near the inlet end of venting hole 30.Process gas is entered by air inlet main valve 1, enters buffering all press chamber 23 through inlet chamber 20, then enters venting hole 30 after adjustment by variable valve 4 and spray.This buffering all presses chamber 23 to make gas buffer, pressure uniform, and the adjustable control of variable valve 4 enters air input and the flow velocity of venting hole 30, and adaptability is good; And this air inlet adjustment assembly is the process gas entered provides airtight passage, avoid leaking.During use, process gas, by spraying after this air inlet adjustment assembly all gas, speed governing, enters processing chamber then.
In the present embodiment, air inlet adjustment body 2 is installed on the upper surface of inlet flange 3, the regulating part of variable valve 4 extends to the top of air inlet adjustment body 2, multiple variable valve 4 is arranged along the side permutation of air inlet adjustment body 2, the outlet side of multiple venting hole 30 extends to the side of inlet flange 3 and aligns one by one with the variable valve 4 of top, structure is simple, compact.
In the present embodiment, air inlet main valve 1 is located at the upper surface of air inlet adjustment body 2, and is positioned at the side of variable valve 4 away from venting hole 30, is convenient to air inlet.
In the present embodiment, variable valve 4 is needle-valve.In other embodiments, variable valve 4 also can be other structure.
Fig. 2 and Fig. 3 shows a kind of air flow method setting device of the present invention, comprise three above-mentioned air inlet adjustment assemblies, three air inlet adjustment assemblies adjoin successively along the permutation direction of venting hole 30, three groups of venting hole 30 one-tenth one permutation horizontal arrangement, three bufferings all press chamber 23 to be all communicated with, the quantity that the venting hole 30 that the quantity that middle one group of venting hole 30 is arranged is greater than both sides is arranged, and the distance between two adjacent groups venting hole 30 is greater than the spacing distance often organizing venting hole self.Middle air inlet adjustment assembly can spray the main process gas flow of one level, the air inlet adjustment assembly ejection horizontal auxiliary gas stream of both sides, and main process gas flow is clipped in the middle by two strands of horizontal auxiliary gas streams, makes the laminar flow that main air stream remains stable, balanced in the horizontal direction; In addition, main process gas flow, substreams good uniformity, speed is adjustable, No leakage.
In the present embodiment, middle air inlet adjustment assembly is main air inlet adjustment assembly 5, the air inlet adjustment assembly of both sides is additional-air inlet adjusting part (6,7), main air inlet adjustment assembly 5, additional-air inlet adjusting part (6,7) inlet flange is one-body molded, main air inlet adjustment assembly 5, additional-air inlet adjusting part (6,7) share same buffering and all press chamber 23, and structure is simpler, compact, be convenient to install.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, when not departing from technical solution of the present invention scope, can utilize the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or being revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to the technology of the present invention essence to any simple modification made for any of the above embodiments, equivalent variations and modification, all should drop in the scope of technical solution of the present invention protection.
Claims (6)
1. the air inlet adjustment assembly of a silicon epitaxy reaction chamber, it is characterized in that: comprise air inlet main valve (1), air inlet adjustment body (2), inlet flange (3) and multiple variable valve (4), described air inlet adjustment body (2) is installed on inlet flange (3), the inlet chamber (20) be communicated with air inlet main valve (1) is provided with in described air inlet adjustment body (2), described inlet flange (3) is offered and variable valve (4) venting hole (30) one to one from inside to outside, described venting hole (30) interval is even, permutation is arranged, being cushioned by one between described venting hole (30) with inlet chamber (20) all presses chamber (23) to be communicated with, the regulating part of described variable valve (4) stretch into buffering all to press in chamber (23) and can away from or near the inlet end of venting hole (30).
2. the air inlet adjustment assembly of silicon epitaxy reaction chamber according to claim 1, it is characterized in that: described air inlet adjustment body (2) is installed on the upper surface of inlet flange (3), the regulating part of described variable valve (4) extends to the top of air inlet adjustment body (2), multiple described variable valve (4) is arranged along the side permutation of air inlet adjustment body (2), and the outlet side of multiple described venting hole (30) extends to the side of inlet flange (3) and aligns one by one with the variable valve (4) of top.
3. the air inlet adjustment assembly of silicon epitaxy reaction chamber according to claim 2, is characterized in that: described air inlet main valve (1) is located at the upper surface of air inlet adjustment body (2), and is positioned at the side of variable valve (4) away from venting hole (30).
4. the air inlet adjustment assembly of silicon epitaxy reaction chamber according to any one of claim 1 to 3, is characterized in that: described variable valve (4) is needle-valve.
5. an air flow method setting device, it is characterized in that: comprise three air inlet adjustment assemblies according to any one of Claims 1-4, three air inlet adjustment assemblies adjoin successively along the permutation direction of venting hole (30), three groups of venting holes (30) become a permutation horizontal arrangement, three bufferings all press chamber (23) to be all communicated with, the quantity that the venting hole (30) that the quantity that middle one group of venting hole (30) is arranged is greater than both sides is arranged, and the distance between two adjacent groups venting hole (30) is greater than the spacing distance often organizing venting hole self.
6. air flow method setting device according to claim 5, it is characterized in that: middle air inlet adjustment assembly is main air inlet adjustment assembly (5), the air inlet adjustment assembly of both sides is additional-air inlet adjusting part (6,7), described main air inlet adjustment assembly (5), additional-air inlet adjusting part (6,7) inlet flange is one-body molded, and described main air inlet adjustment assembly (5), additional-air inlet adjusting part (6,7) share same buffering and all press chamber (23).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510678674.1A CN105386122A (en) | 2015-10-20 | 2015-10-20 | Inlet regulating assembly and gas flow distribution regulating apparatus of silicon epitaxy reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510678674.1A CN105386122A (en) | 2015-10-20 | 2015-10-20 | Inlet regulating assembly and gas flow distribution regulating apparatus of silicon epitaxy reaction chamber |
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| Publication Number | Publication Date |
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| CN105386122A true CN105386122A (en) | 2016-03-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510678674.1A Pending CN105386122A (en) | 2015-10-20 | 2015-10-20 | Inlet regulating assembly and gas flow distribution regulating apparatus of silicon epitaxy reaction chamber |
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| CN (1) | CN105386122A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591941A (en) * | 2016-10-31 | 2017-04-26 | 中国电子科技集团公司第四十八研究所 | Silicon epitaxy reaction chamber |
| CN112159971A (en) * | 2020-09-25 | 2021-01-01 | 北京北方华创微电子装备有限公司 | Semiconductor cavity |
| CN113249786A (en) * | 2021-05-11 | 2021-08-13 | 北京北方华创微电子装备有限公司 | Gas inlet structure and semiconductor process equipment |
| CN115029775A (en) * | 2021-03-05 | 2022-09-09 | 中国电子科技集团公司第四十八研究所 | Epitaxial growth equipment with gas flowing horizontally |
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| JP2002280378A (en) * | 2001-01-11 | 2002-09-27 | Hitachi Kokusai Electric Inc | Batch-type remote plasma treatment apparatus |
| CN101355010A (en) * | 2007-07-26 | 2009-01-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake installation and reaction chamber |
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN202881383U (en) * | 2012-09-28 | 2013-04-17 | 深圳市捷佳伟创新能源装备股份有限公司 | Gas balancing device for metal-organic chemical vapor deposition (MOCVD) equipment reaction chamber |
| CN104651838A (en) * | 2013-11-22 | 2015-05-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet apparatus and reaction chamber |
| CN104862667A (en) * | 2014-02-26 | 2015-08-26 | 甘志银 | Symmetrical vapor deposition equipment reaction cavity |
| CN104975271A (en) * | 2014-04-11 | 2015-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air inlet device and semiconductor processing device |
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2015
- 2015-10-20 CN CN201510678674.1A patent/CN105386122A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002280378A (en) * | 2001-01-11 | 2002-09-27 | Hitachi Kokusai Electric Inc | Batch-type remote plasma treatment apparatus |
| CN101355010A (en) * | 2007-07-26 | 2009-01-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake installation and reaction chamber |
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN202881383U (en) * | 2012-09-28 | 2013-04-17 | 深圳市捷佳伟创新能源装备股份有限公司 | Gas balancing device for metal-organic chemical vapor deposition (MOCVD) equipment reaction chamber |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591941A (en) * | 2016-10-31 | 2017-04-26 | 中国电子科技集团公司第四十八研究所 | Silicon epitaxy reaction chamber |
| CN112159971A (en) * | 2020-09-25 | 2021-01-01 | 北京北方华创微电子装备有限公司 | Semiconductor cavity |
| CN112159971B (en) * | 2020-09-25 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Semiconductor cavity |
| CN115029775A (en) * | 2021-03-05 | 2022-09-09 | 中国电子科技集团公司第四十八研究所 | Epitaxial growth equipment with gas flowing horizontally |
| CN113249786A (en) * | 2021-05-11 | 2021-08-13 | 北京北方华创微电子装备有限公司 | Gas inlet structure and semiconductor process equipment |
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| PB01 | Publication | ||
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Application publication date: 20160309 |