CN106591941A - Silicon epitaxy reaction chamber - Google Patents
Silicon epitaxy reaction chamber Download PDFInfo
- Publication number
- CN106591941A CN106591941A CN201610930755.0A CN201610930755A CN106591941A CN 106591941 A CN106591941 A CN 106591941A CN 201610930755 A CN201610930755 A CN 201610930755A CN 106591941 A CN106591941 A CN 106591941A
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- CN
- China
- Prior art keywords
- exhaust
- flange
- reative cell
- air inlet
- silicon epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a silicon epitaxy reaction chamber. The silicon epitaxy reaction chamber comprises a reaction chamber, a gas inlet regulating assembly, an exhaust flange and a chip bearing disc, wherein a gas inlet flange is arranged between the gas inlet regulating assembly and a gas inlet of the reaction chamber, an exhaust regulating plate is arranged between an exhaust port of the reaction chamber and the exhaust flange, a plurality of exhaust holes are uniformly formed in the exhaust regulating plate, the reaction chamber comprises a bottom plate and a top plate which are arranged horizontally, the chip bearing disc is arranged on the bottom plate, and the top plate is arranged obliquely from the gas inlet side to the exhaust port side. The silicon epitaxy reaction chamber has the advantages of being simple in structure, convenient to regulate, good in gas stability and uniformity and the like.
Description
Technical field
The present invention relates to silicon epitaxy consersion unit, more particularly to a kind of silicon epitaxial reaction cavity room.
Background technology
Silicon epitaxy process not only will grow one layer and the on all four thin layer of backing material lattice structure in substrate surface, also
Epitaxial layer is doped, form p-type or N-type active layer.Silicon epitaxy process is carried out at high temperature, and takes insulation, heat-insulated
Measure, and epitaxial growth rate is closely related with gas flow rate, under certain technological temperature, epitaxy layer thickness and uniform doping
Property is mainly affected by factors such as gas flow rate, even and stability.
Patent document CN105386122A discloses a kind of air inlet adjustment component of silicon epitaxy reative cell, and it can be to air inlet
Air-flow enters row buffering and charge flow rate is adjusted, uniform into the indoor air-flow of reaction such that it is able to preferably ensure,
But existing silicon epitaxy reative cell still suffers from following technical problem：The indoor admission pressure of reaction is difficult to remain flat with pressure at expulsion
Weighing apparatus, the stability for reacting indoor air flow is poor, it is impossible to meet even requirement.
The content of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, there is provided a kind of simple structure, it is easy to adjust,
The good silicon epitaxial reaction cavity room of gas stabilization and uniformity.
To solve above-mentioned technical problem, the present invention is employed the following technical solutions：
A kind of silicon epitaxial reaction cavity room, including reative cell, air inlet adjustment component, exhaust flange and chip-bearing disc, the air inlet
Inlet flange, the exhaust outlet of the reative cell and the exhaust flange are provided between the air inlet of adjusting part and the reative cell
Between be provided with exhaust adjustable plate, the exhaust adjustable plate is provided with multiple steam vents being evenly arranged, and the reative cell includes water
Base plate and top board that plain cloth is put, on the base plate, the top board is along air inlet side to exhaust side for the chip-bearing disc
It is in tilted layout.
As the further improvement of above-mentioned technical proposal：
There is gap to form exhaust buffering area between the exhaust adjustable plate and the exhaust flange.
The chip-bearing disc lower section is connected with rotating mechanism.
Between the air inlet adjustment component and the inlet flange, between the inlet flange and the reative cell and institute
State and be equipped with sealing ring between reative cell and the exhaust flange.
Sealing ring between the inlet flange and the reative cell and between the reative cell and the exhaust flange is equal
Including the large sealing packing ring and small sealing ring of arranged concentric, cooling water pipe is equipped with the inlet flange and the exhaust flange,
The delivery port of the cooling water pipe is located between the large sealing packing ring and small sealing ring.
Compared with prior art, it is an advantage of the current invention that：Silicon epitaxial reaction cavity room disclosed by the invention, air inlet side is utilized
Ripe air inlet adjustment component enters row buffering to charge air flow, charge flow rate is adjusted, and the top board of reative cell is along air inlet
Lateral exhaust outlet rolls tiltedly arrangement so that the indoor air-flow of reaction has certain compression, it is ensured that reaction indoor air flow pressure becomes
In balance, exhaust side arranges exhaust adjustable plate, arranges multiple steam vents being evenly arranged on exhaust adjustable plate so that exhaust side
Exhaust is uniform, stable, requires that the exhaust adjustable plate for changing different pore size coordinates air inlet adjustment component according to different operation pressures
Air inlet buffering, adjustment effect, can will reaction indoor air flow adjust to optimal poised state, it is ensured that reaction indoor air flow it is steady
Qualitative and uniformity, and it is simple structure, easy to adjust.
Description of the drawings
Fig. 1 is the dimensional structure diagram of silicon epitaxial reaction cavity room of the present invention.
Fig. 2 is the enlarged drawing in Fig. 1 at A.
Fig. 3 is the structural representation of the exhaust adjustable plate in the present invention.
Each label is represented in figure：1st, reative cell；11st, air inlet；12nd, exhaust outlet；13rd, base plate；14th, top board；2nd, controlled atmosphere is entered
Section component；3rd, exhaust flange；4th, chip-bearing disc；5th, inlet flange；6th, it is vented adjustable plate；61st, steam vent；7th, exhaust buffering
Area；8th, rotating mechanism；9th, sealing ring；91st, large sealing packing ring；92nd, small sealing ring；10th, cooling water pipe；100th, frame.
Specific embodiment
The present invention is described in further details below with reference to Figure of description and specific embodiment.
As shown in Figure 1, Figure 2 and Figure 3, the silicon epitaxial reaction cavity room of the present embodiment, including reative cell 1, air inlet adjustment component
2nd, exhaust flange 3 and chip-bearing disc 4, are provided with inlet flange 5, instead between air inlet adjustment component 2 and the air inlet 11 of reative cell 1
Answer and exhaust adjustable plate 6 is provided between the exhaust outlet 12 of room 1 and exhaust flange 3, be vented adjustable plate 6 and be provided with multiple being evenly arranged
Steam vent 61, reative cell 1 includes horizontally disposed base plate 13 and top board 14, and chip-bearing disc 4 is located on base plate 13, the edge of top board 14
The lateral side of exhaust outlet 12 of air inlet 11 is in tilted layout.The silicon epitaxial reaction cavity room air inlet side is using ripe air inlet adjustment component 2
Enter row buffering to charge air flow, charge flow rate is adjusted, the top board 14 of reative cell 1 is along the lateral side of exhaust outlet 12 of air inlet 11
It is in tilted layout so that the air-flow in reative cell 1 has certain compression, it is ensured that the interior air-flow pressure of reative cell 1 tends to balance, is vented
Side arranges exhaust adjustable plate 6, arranges multiple steam vents 61 being evenly arranged on exhaust adjustable plate 6 so that the exhaust of exhaust side is equal
It is even, stable, require that the exhaust adjustable plate 6 for changing different pore size coordinates entering for air inlet adjustment component 2 according to different operation pressures
Gas buffering, adjustment effect, the interior air-flow of reative cell 1 can be adjusted to optimal poised state, it is ensured that the interior air-flow of reative cell 1 is stablized
Property and uniformity, and it is simple structure, easy to adjust.
In the present embodiment, there is gap between exhaust adjustable plate 6 and exhaust flange 3 to form exhaust buffering area 7, reative cell
After 1 gas discharged is by the steam vent 61 on exhaust adjustable plate 6, buffered into exhaust buffering area 7, then Jing exhausts again
Flange 3 is discharged, and further increases exhaust stability.
In the present embodiment, the lower section of chip-bearing disc 4 is connected with rotating mechanism 8, in technical process, using the band of rotating mechanism 8
Dynamic chip-bearing disc 4 is in all the time rotation status, and the air-flow for keeping chip to contact everywhere is uniform.
In the present embodiment, between air inlet adjustment component 2 and inlet flange 5, between inlet flange 5 and reative cell 1 and react
Sealing ring 9 is equipped between room 1 and exhaust flange 3, it is to avoid reacting gas is leaked.
In the present embodiment, the sealing ring 9 between inlet flange 5 and reative cell 1 and between reative cell 1 and exhaust flange 3 is equal
Including the large sealing packing ring 91 and small sealing ring 92 of arranged concentric, cooling water pipe 10 is equipped with inlet flange 5 and exhaust flange 3,
The delivery port of cooling water pipe 10 is located between large sealing packing ring 91 and small sealing ring 92, arranges the large sealing packing ring 91 of arranged concentric and little
Sealing ring 92 improves sealing property, and the output cooling water of cooling water pipe 10 carries out cold to large sealing packing ring 91 and small sealing ring 92 simultaneously
But, it is to avoid large sealing packing ring 91 and small sealing ring 92 are contacted with reative cell 1 and cause temperature to raise.
The operation principle of silicon epitaxial reaction cavity room of the present invention is as follows：
When carrying out technical process, rotating mechanism 8 is rotated and drives chip-bearing disc 4 to rotate, and opens air inlet adjustment component 2, technique
Gas is buffered through air inlet adjustment component 2, and the gas after buffering passes sequentially through the air inlet 11 of inlet flange 5, reative cell 1
Into in reative cell 1, it is positioned over the chip on chip-bearing disc 4 and reacts in process gas, during gas flow 12 side of exhaust outlet
Obtain certain compression, it is ensured that stream pressure tends to balance before and after reaction, last gas successively the exhaust outlet 12 of reacted room 1,
Exhaust adjustable plate 6 and exhaust flange 3 are discharged, and are vented the steam vent 61 being evenly arranged on adjustable plate 6 so that the exhaust of exhaust side
Uniformly, stable, gas is entered and buffered after exhaust buffering area 7, further increases exhaust stability.
Although the present invention is disclosed above with preferred embodiment, but it is not limited to the present invention.It is any to be familiar with ability
The technical staff in domain, in the case of without departing from technical solution of the present invention scope, all using the technology contents pair of the disclosure above
Technical solution of the present invention makes many possible variations and modification, or the Equivalent embodiments for being revised as equivalent variations.Therefore, it is every
Without departing from the content of technical solution of the present invention, according to the technology of the present invention essence to any simple modification made for any of the above embodiments,
Equivalent variations and modification, all should fall in the range of technical solution of the present invention protection.
Claims (5)
1. a kind of silicon epitaxial reaction cavity room, including reative cell（1）, air inlet adjustment component（2）, exhaust flange（3）And crystal chip bearing
Disk（4）, it is characterised in that：The air inlet adjustment component（2）With the reative cell（1）Air inlet（11）Between be provided with air inlet method
It is blue（5）, the exhaust flange（3）With the reative cell（1）Exhaust outlet（12）Between be provided with exhaust adjustable plate（6）, the row
Gas adjustable plate（6）On be uniformly provided with multiple steam vents（61）, the reative cell（1）Including horizontally disposed base plate（13）And enter certainly
Gas port（11）To exhaust outlet（12）The top board being in tilted layout（14）, the chip-bearing disc（4）Located at the base plate（13）On.
2. silicon epitaxial reaction cavity room according to claim 1, it is characterised in that：The exhaust adjustable plate（6）With the row
Gas flange（3）Between there is gap forming exhaust buffering area（7）.
3. silicon epitaxial reaction cavity room according to claim 1 and 2, it is characterised in that：The chip-bearing disc（4）Lower section connects
It is connected to rotating mechanism（8）.
4. silicon epitaxial reaction cavity room according to claim 1 and 2, it is characterised in that：The air inlet adjustment component（2）With institute
State inlet flange（5）Between, the inlet flange（5）With the reative cell（1）Between and the reative cell（1）With the row
Gas flange（3）Between be equipped with sealing ring（9）.
5. silicon epitaxial reaction cavity room according to claim 4, it is characterised in that：The inlet flange（5）With the reaction
Room（1）Between and the reative cell（1）With the exhaust flange（3）Between sealing ring（9）Including the big close of arranged concentric
Seal（91）And small sealing ring（92）, the inlet flange（5）With the exhaust flange（3）On be equipped with cooling water pipe（10）,
The cooling water pipe（10）Delivery port be located at the large sealing packing ring（91）And small sealing ring（92）Between.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610930755.0A CN106591941A (en) | 2016-10-31 | 2016-10-31 | Silicon epitaxy reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610930755.0A CN106591941A (en) | 2016-10-31 | 2016-10-31 | Silicon epitaxy reaction chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106591941A true CN106591941A (en) | 2017-04-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610930755.0A Pending CN106591941A (en) | 2016-10-31 | 2016-10-31 | Silicon epitaxy reaction chamber |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115029775A (en) * | 2021-03-05 | 2022-09-09 | 中国电子科技集团公司第四十八研究所 | Epitaxial growth equipment with gas flowing horizontally |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714905A (en) * | 1993-06-25 | 1995-01-17 | Kokusai Electric Co Ltd | Vacuum treatment vessel with substrate transfer mechanism in semiconductor manufacturing device |
| CN101615575A (en) * | 2008-06-23 | 2009-12-30 | 东京毅力科创株式会社 | Buffer board and substrate board treatment |
| CN103726103A (en) * | 2012-10-10 | 2014-04-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| US20150252493A1 (en) * | 2013-03-14 | 2015-09-10 | Applied Materials, Inc. | Ceiling portion for epitaxial growth apparatus |
| CN104934346A (en) * | 2014-03-20 | 2015-09-23 | 株式会社日立国际电气 | Substrate processing apparatus and method for manufacturing semiconductor device |
| CN204874818U (en) * | 2015-06-16 | 2015-12-16 | Lpe公司 | A adjustable part in position, reacting chamber and epitaxial reactor for reacting chamber of epitaxial reactor |
| CN105386122A (en) * | 2015-10-20 | 2016-03-09 | 中国电子科技集团公司第四十八研究所 | Inlet regulating assembly and gas flow distribution regulating apparatus of silicon epitaxy reaction chamber |
| CN105702603A (en) * | 2014-12-10 | 2016-06-22 | 东京毅力科创株式会社 | Heat treatment apparatus and heat treatment method |
-
2016
- 2016-10-31 CN CN201610930755.0A patent/CN106591941A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714905A (en) * | 1993-06-25 | 1995-01-17 | Kokusai Electric Co Ltd | Vacuum treatment vessel with substrate transfer mechanism in semiconductor manufacturing device |
| CN101615575A (en) * | 2008-06-23 | 2009-12-30 | 东京毅力科创株式会社 | Buffer board and substrate board treatment |
| CN103726103A (en) * | 2012-10-10 | 2014-04-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| US20150252493A1 (en) * | 2013-03-14 | 2015-09-10 | Applied Materials, Inc. | Ceiling portion for epitaxial growth apparatus |
| CN104934346A (en) * | 2014-03-20 | 2015-09-23 | 株式会社日立国际电气 | Substrate processing apparatus and method for manufacturing semiconductor device |
| CN105702603A (en) * | 2014-12-10 | 2016-06-22 | 东京毅力科创株式会社 | Heat treatment apparatus and heat treatment method |
| CN204874818U (en) * | 2015-06-16 | 2015-12-16 | Lpe公司 | A adjustable part in position, reacting chamber and epitaxial reactor for reacting chamber of epitaxial reactor |
| CN105386122A (en) * | 2015-10-20 | 2016-03-09 | 中国电子科技集团公司第四十八研究所 | Inlet regulating assembly and gas flow distribution regulating apparatus of silicon epitaxy reaction chamber |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115029775A (en) * | 2021-03-05 | 2022-09-09 | 中国电子科技集团公司第四十八研究所 | Epitaxial growth equipment with gas flowing horizontally |
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Application publication date: 20170426 |