CN102121099B - Method for depositing film by using LPCVD process - Google Patents
Method for depositing film by using LPCVD process Download PDFInfo
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- CN102121099B CN102121099B CN 201010022721 CN201010022721A CN102121099B CN 102121099 B CN102121099 B CN 102121099B CN 201010022721 CN201010022721 CN 201010022721 CN 201010022721 A CN201010022721 A CN 201010022721A CN 102121099 B CN102121099 B CN 102121099B
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Abstract
The invention discloses a method for depositing a film by using a low pressure chemical vapor deposition (LPCVD) process. The method comprises the following steps of: keeping the temperature of each temperature zone in a heater of a furnace tube unchangeable at a stable stage and a deposition stage, wherein the temperature values of the temperature zones are sequentially reduced from top to bottom according to the positions of the temperature zones; and adjusting the temperature of each temperature zone in the heater of the furnace tube in at least one of a boat loading stage, a vacuumizing stage, a leak detection stage, a later clearing stage, a back pressure stage and a boat unloading stage. By using the method provided by the invention, the heat budget difference of wafers loaded on a boat in the film forming process can be effectively reduced, the electric performance of semiconductor components can be improved, the yield of the produced semiconductor components can be improved, and the manufacturing cost can be reduced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of method of using LPCVD process deposits film that improves.
Background technology
In semiconductor fabrication process, for discrete device and unicircuit are set, need to be at the different types of film of substrate deposition of wafer.And in the method for various deposit films, low-pressure chemical vapor deposition (LPCVD, Low Pressure Chemical Vapor Deposition) is a kind of method commonly used, has been widely used in the depositing operation of various films.
Take the film of required deposition as sidewall structure as example; in side wall silicon-dioxide in the prior art (Spacer Silicon Oxide), side wall nitride silicon (the Spacer Silicon Nitride) deposition method; usually can use above-mentioned LPCVD technique; to deposit required sidewall structure at wafer (Wafer); for example; have the sidewall structure of oxide layer-nitride layer-oxide layer (ONO) three-decker, or have sidewall structure of zone of oxidation-nitride layer (ON) double-layer structure etc.When depositing required film (for example, sidewall structure) by LPCVD technique, generally also need to use corresponding boiler tube, i.e. the LPCVD boiler tube.
Fig. 1 is the cross-sectional view of LPCVD boiler tube of the prior art.As shown in Figure 1, this LPCVD boiler tube mainly comprises: well heater (Heater), the reaction chamber (Quartztube), bottom (Cap) and the brilliant boat (Boat) that are made of quartz material.
Wherein, bottom links to each other with brilliant boat, and can drive brilliant boat under the driving of extraneous drive system (not shown) and move up and down; Brilliant boat is used for loading silicon chip, usually, once can load 100～150 silicon chips, as shown in Figure 1, can place a slice on each grid.When needs loaded silicon chip, bottom drove brilliant boat and moves down, and leaves reaction chamber, and silicon slice loading is complete, and bottom drives brilliant boat and moves up, and entered in the reaction chamber, and consisted of together closed structure with reaction chamber.In addition, be provided with inlet mouth and air outlet on the reaction chamber, be used for input reaction desired gas and combustion gas.
Well heater is positioned at outside the reaction chamber, is used for reaction chamber is heated.In the design of most of boiler tubes, the main part of well heater presents cylindrical shape, and the top cover that adopts the material such as asbestos to make seals the top.Usually, the outermost layer of the main part of well heater is made by stainless material, and the centre is one deck thermal insulation layer, mainly is in order to prevent temperature in the reaction chamber to external diffusion, and the thermal insulation layer the inside is heating circuit, consists of by being looped around resistance wire on the thermal insulation layer inwall etc.
Wherein, well heater can be divided into 4 or 5 warm areas (Zone) in accordance with the order from top to bottom, and the heating circuit of each warm area is separate, does not interfere with each other, and is respectively applied to the different zones in the reaction chamber is heated.As shown in Figure 2, Fig. 2 is the synoptic diagram of the different warm areas of well heater in the prior art.Suppose to be divided into and be A, B, C, D, 5 warm areas of E; And for different warm areas, heating circuit is independent of each other, so the temperature of each warm area can be not identical.In accordance with the order from top to bottom, 5 of above-mentioned well heater warm areas can be called: top (Top) warm area (being the A warm area among Fig. 2), upper middle part (Center-Top) warm area (being the B warm area among Fig. 2), middle part (Center) warm area (being the C warm area among Fig. 2), middle and lower part (Center-Bottom) warm area (being the D warm area among Fig. 2) and bottom (Bottom) warm area (being the E warm area among Fig. 2); Each warm area is respectively applied to 5 different zones such as upper area corresponding in the reacting by heating chamber, upper central region, central region, zone, middle and lower part and lower region; And when brilliant boat was arranged in above-mentioned reaction chamber and is heated, each warm area of above-mentioned well heater namely was respectively applied to heat 5 different zones such as upper area corresponding on this crystalline substance boat, upper central region, central region, zone, middle and lower part and lower region.
In addition, each warm area all can arrange a temperature regulator (not shown among Fig. 2) usually, so that system adjusts the temperature of each warm area as required.
In the prior art, can use above-mentioned LPCVD boiler tube, and deposit required film with LPCVD technique.Fig. 3 is the temperature curve synoptic diagram when using LPCVD process deposits film in the prior art.As shown in Figure 3, in general, use the method for LPCVD process deposits film usually can be divided into simply eight stages in the prior art, below will be described in detail these eight stages.
One, brilliant boat loads (boat load) stage.
In this stage, when needs load wafer, the bottom of boiler tube will drive brilliant boat and move down, and leave the reaction chamber of boiler tube; At this moment, can be with the wafer load of required processing on brilliant boat.After wafer load was finished, bottom can drive brilliant boat and move up, and entered in the reaction chamber, and consisted of together closed structure with reaction chamber.
In this stage, the temperature of each warm area in the well heater of boiler tube will progressively be elevated to predetermined each different temperature, then keep constant, as shown in Figure 3.Wherein, the Q among Fig. 3
01, Q
02, Q
03, Q
04And Q
05The temperature curve that represents respectively bottom warm area, middle and lower part warm area, middle part warm area, upper middle part warm area and top warm area in the well heater.Therefore, when the brilliant boat loading stage finished, the temperature of above-mentioned each warm area was not identical, and the temperature value of each warm area reduces successively according to the position order from top to bottom of each warm area.For example, the temperature value of top warm area is greater than the temperature value of bottom warm area.
Two, vacuumize (pump down) stage.
In this stage, the operation that will vacuumize reaction chamber by the equipment such as vacuum pump (not shown among Fig. 2) is so that the air pressure in the reaction chamber is down to predetermined numerical value.
In this stage, the homo(io)thermism of keeping each warm area is constant, and therefore, the position order from top to bottom that the temperature value of each warm area remains according to each warm area reduces successively, as shown in Figure 3.
Three, leak detection (leak check) stage.
In this stage, will the resistance to air loss of reaction chamber be detected, to prevent from producing in the reaction chamber phenomenon of gas leakage.For example, the air pressure in the reaction chamber dropped to definite numerical value after, measure the atmospheric pressure value in the reaction chamber, this state is kept for some time (for example, 1 minute) after, again measure the atmospheric pressure value in the reaction chamber.If the difference of twice measuring result represents then that less than default threshold value the resistance to air loss of reaction chamber is up to specification; Otherwise, represent that then the resistance to air loss of reaction chamber is against regulation, thereby can not continue to enter the processing of next stage.
In this stage, the homo(io)thermism that will keep each warm area is constant, and therefore, the position order from top to bottom that the temperature value of each warm area remains according to each warm area reduces successively, as shown in Figure 3.
Four, stable (stabilize) stage.
In this stage, will be invariable by air pressure and temperature value that corresponding regulating measure is kept in the reaction chamber as far as possible, and with this state maintenance for some time, the processing that is beneficial to enter next stage.In this stage, the homo(io)thermism that will keep each warm area is constant, as shown in Figure 3.
Five, deposition (deposition) stage.
In this stage, will in reaction chamber, pass into corresponding reactant gases by inlet mouth, utilize high temperature to make reactant gases and wafer generation chemical reaction, thereby grow required film at crystal column surface.
In this stage, the homo(io)thermism that continues to keep each warm area is constant, and therefore, the position order from top to bottom that the temperature value of each warm area remains according to each warm area reduces successively, as shown in Figure 3.
Six, rear removing (post purge) stage.
In the above-mentioned depositional phase, be passed into corresponding reactant gases in the reaction chamber.In general, above-mentioned reactant gases all has certain toxicity and corrodibility usually, therefore, and after finishing above-mentioned depositing operation, remaining reactant gases in the reaction chamber need to be discharged in the reaction chamber, be beneficial to the maintenance of boiler tube itself and the carrying out of follow-up other treatment process.Therefore, in this stage, will remaining reactant gases in the reaction chamber be discharged reaction chamber by the air outlet by corresponding air extractor (not shown among Fig. 2).
In this stage, the homo(io)thermism that will keep each warm area is constant, and therefore, the position order from top to bottom that the temperature value of each warm area remains according to each warm area reduces successively, as shown in Figure 3.
Seven, return pressure (back fill) stage.
In this stage, equate progressively the air pressure in the reaction chamber being elevated to the atmospheric pressure in the external world, be beneficial to brilliant boat is shifted out reaction chamber.
In addition, in this stage, the homo(io)thermism that will keep each warm area is constant, and therefore, the position order from top to bottom that the temperature value of each warm area remains according to each warm area reduces successively, as shown in Figure 3.
Eight, brilliant boat unloading (boat unload) stage.
In this stage, the bottom of boiler tube will drive brilliant boat and move down, so that should leave the reaction chamber of boiler tube by the crystalline substance boat, thus the wafer on the brilliant boat can be unloaded.In this stage, boiler tube well heater in the temperature of each warm area just progressively descend from different temperature values, until reach predetermined temperature, be beneficial to the unloading of wafer, as shown in Figure 3.
By eight above-mentioned stages, can be at the required film of above-mentioned wafer deposition.In addition, in above-mentioned eight stages, except brilliant boat loaded stage and brilliant boat unloading phase, in other six stages, the temperature in the reaction chamber of boiler tube remained unchanged.
When using LPCVD process deposits film, usually wish that all the Thickness Ratio of the film that each crystal column surface deposits is more even, carry out follow-up art breading thereby be beneficial to.But because the brilliant boat of above-mentioned LPCVD boiler tube generally is tower structure (as shown in Figure 2), and reactant gases is that bottom by reaction chamber passes into, and can be on the crystal column surface on the brilliant boat in uphill process deposit film.Therefore, the concentration of the reactant gases at the top of brilliant boat will inevitably be less than the concentration of the reactant gases of brilliant boat bottom.If in the identical situation of temperature, the thickness of the film that the thickness of the film that deposits on the wafer of brilliant boat upper area deposits on will inevitably the wafer less than brilliant boat lower region, thereby so that the film that deposits on each wafer of same batch in uneven thickness.
For so that the even thickness of the film that deposits on each wafer, in the prior art, the mode of the power of heating circuit that generally can be by adjusting different warm areas, the temperature of each warm area of well heater in the boiler tube is reduced in accordance with the order from top to bottom successively, thereby so that the temperature in 5 zones such as the upper area of brilliant boat, upper central region, central region, zone, middle and lower part and lower region reduces successively, wherein, the temperature of brilliant boat lower region is minimum, and the temperature of brilliant boat upper area is the highest.In general, the difference of the temperature of the temperature of brilliant boat lower region and brilliant boat upper area can reach 20 degrees centigrade (℃) about, as shown in Figure 3.Because the concentration of the reactant gases of the highest brilliant boat upper area of temperature is minimum, and the concentration of the reactant gases of the minimum brilliant boat lower region of temperature is the highest, therefore can be so that the Thickness Ratio of the film that deposits on each wafer is more even.
In addition, because air pressure is lower when using LPCVD process deposits film, so surrounding enviroment are more stable, and the quality of the film that then deposits is just higher.So, in order to improve the quality of the film that deposits, in the above-mentioned process that deposits required film with LPCVD technique, in the brilliant boat loading stage, the temperature of each warm area in the reaction chamber namely begins progressively to rise, after finishing the brilliant boat loading stage, it is invariable that the temperature of each warm area in the reaction chamber namely keeps always; Until after brilliant boat unloading phase began, the temperature of each warm area in the reaction chamber just began progressively to descend.Because brilliant boat upper area will enter reaction chamber at first in the brilliant boat stage of loading, and withdraw from last reaction chamber, and be in the highest top warm area of temperature in reaction chamber; And brilliant boat lower region will enter reaction chamber at last in the brilliant boat loading stage, and withdraw from reaction chamber at first, and be in the minimum bottom warm area of temperature in reaction chamber.So, the total heat budget (thermal budget) of the wafer that brilliant boat upper area loads in whole technical process, the i.e. product of temperature and time, the total heat budget of wafer in whole technical process that will load greater than brilliant boat lower region.
That is to say, in the prior art, after finishing in the brilliant boat loading stage, before brilliant boat unloading phase begins, the temperature of each warm area in the well heater of LPCVD boiler tube is not identical, the temperature value of each warm area is to reduce successively according to warm area position order from top to bottom, thereby so that the temperature of regional is not identical yet on the brilliant boat, the temperature of brilliant boat upper area will be higher than the temperature of brilliant boat lower region, thereby so that the total heat budget of each wafer that loads on the brilliant boat in whole technical process is not identical yet.
Along with the development of semiconductor fabrication process, the critical size of semiconductor components and devices (CD) is reducing day by day, and the size of the difference of the total heat budget between the wafer is also increasing for the impact on the electric property of the semiconductor components and devices on this wafer.For example, experimental data shows, the method of stating in the use is behind the required film of wafer deposition, when above-mentioned each wafer is carried out wafer testing electrical property (WAT, WaferAcceptance Test) time, if the difference of the total heat budget between each wafer is larger, then the variation range of the saturation currnet of above-mentioned each wafer (Idsat) also will be larger, thereby the stability to the electric property of each wafer of each batch (lots) has caused very adverse influence, reduce the yield of the semiconductor components and devices produced, increased manufacturing cost.
Summary of the invention
In view of this, the invention provides a kind of method of the LPCVD of use process deposits film, thereby reduce in the forming process of film, to be loaded in the difference of the total heat budget in whole technical process between each wafer on the brilliant boat, improve the electric property of semiconductor components and devices.
According to above-mentioned purpose, technical scheme of the present invention is achieved in that
A kind of method of using the low-pressure chemical vapor deposition process deposit film, the method comprises: brilliant boat loads stage, vacuumizing phase, leak detection stage, steady stage, depositional phase, rear removing stage, returns pressure stage and brilliant boat unloading phase; Wherein,
In steady stage and depositional phase, keep the temperature-resistant of each warm area in the well heater of boiler tube, and the temperature value of each warm area reduces successively according to the position order from top to bottom of each warm area;
Load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of each warm area in the well heater of adjustment boiler tube, with the difference of the heat budget between each wafer in the regional that reduces to be loaded in brilliant boat, or so that the heat budget that is loaded between each wafer in the regional of brilliant boat reduce successively according to the position order from the bottom up of regional.
Describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
Load the stage at brilliant boat, the temperature of each warm area in the well heater of boiler tube progressively is increased to same predetermined temperature value;
In vacuumizing phase, keep the temperature-resistant of each warm area;
In the leak detection stage, progressively adjust the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area.
Describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
Load the stage at brilliant boat, the temperature of each warm area in the well heater of boiler tube progressively is increased to each default temperature value, so that the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area;
In vacuumizing phase, keep the temperature-resistant of each warm area;
In the leak detection stage, progressively adjust the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area.
Describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
In the rear removing stage, the temperature of each warm area in the well heater of boiler tube progressively is increased to same predetermined temperature value;
Return the pressure stage, keeping the temperature-resistant of each warm area;
At brilliant boat unloading phase, progressively reduce the temperature of each warm area in the well heater of boiler tube.
Describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
In the rear removing stage, progressively adjust the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area;
Return the pressure stage, keeping the temperature-resistant of each warm area;
At brilliant boat unloading phase, progressively reduce the temperature of each warm area in the well heater of boiler tube.
Describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
Load stage, vacuumizing phase, leak detection stage, rear removing stage, return in any one stage in pressure stage and the brilliant boat unloading phase at described brilliant boat, the temperature of each warm area in the well heater of boiler tube progressively is increased to same predetermined temperature value;
Within the predetermined time, keep the temperature-resistant of each warm area;
Progressively adjust the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area.
Describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
Load stage, vacuumizing phase, leak detection stage, rear removing stage, return in any one stage in pressure stage and the brilliant boat unloading phase at described brilliant boat, the temperature of each warm area in the well heater of boiler tube progressively is increased to each default temperature value, so that the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area;
Within the predetermined time, keep the temperature-resistant of each warm area;
Progressively adjust the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area.
The span of described predetermined temperature value is: 684～688 ℃.
As from the foregoing, the invention provides a kind of method of the LPCVD of use process deposits film, because in the method, by loading the stage at brilliant boat, vacuumizing phase, the leak detection stage, the rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase, respectively the temperature of each warm area in the well heater of boiler tube is adjusted, thereby effectively reduced in the forming process of film, to be loaded in the heat budget difference between each wafer on the brilliant boat, improved the electric property of semiconductor components and devices, improve the yield of the semiconductor components and devices of producing, reduced manufacturing cost.
Description of drawings
Fig. 1 is the cross-sectional view of LPCVD boiler tube of the prior art.
Fig. 2 is the synoptic diagram of the different warm areas of well heater in the prior art.
Fig. 3 is the temperature curve synoptic diagram when using LPCVD process deposits film in the prior art.
Fig. 4 is the method synoptic diagram that uses LPCVD process deposits film among the present invention.
Fig. 5 is the method flow diagram of embodiment one among the present invention.
Fig. 6 is the temperature curve synoptic diagram among the embodiment one among the present invention.
Fig. 7 is the method flow diagram of embodiment two among the present invention.
Fig. 8 is the temperature curve synoptic diagram among the embodiment two among the present invention.
Fig. 9 is the method flow diagram of embodiment three among the present invention.
Figure 10 is the temperature curve synoptic diagram among the embodiment three among the present invention.
Figure 11 is the method flow diagram of embodiment four among the present invention.
Figure 12 is the temperature curve synoptic diagram among the embodiment four among the present invention.
Figure 13 is the method flow diagram of embodiment five among the present invention.
Figure 14 is the method flow diagram of embodiment six among the present invention.
Embodiment
In order to make the purpose, technical solutions and advantages of the present invention clearer, below lift specific embodiment and with reference to accompanying drawing, the present invention is described in more detail.
In technical scheme of the present invention, a kind of method of the LPCVD of use process deposits film has been proposed.Fig. 4 is the method synoptic diagram that uses LPCVD process deposits film among the present invention.Wherein, when using LPCVD process deposits film, comprise that also brilliant boat as implied above loads stage, vacuumizing phase, leak detection stage, steady stage, depositional phase, rear removing stage, returns eight stages such as pressure stage and brilliant boat unloading phase; The method of the use LPCVD process deposits film that provides among the present invention in addition, also comprises following steps as shown in Figure 4:
Step 401 in steady stage and depositional phase, is kept the temperature-resistant of each warm area in the well heater of boiler tube, and the temperature value of each warm area reduces successively according to the position order from top to bottom of each warm area.
In order not reduce the quality of the film that deposits, in an embodiment of the present invention, in steady stage and depositional phase, still must keep the temperature-resistant of each warm area in the well heater of boiler tube, and the temperature value of each warm area still reduces successively according to the position order from top to bottom of each warm area, is beneficial to deposit required film.
Therefore, in aforementioned stable stage and depositional phase, the heat budget of the wafer that loads in the regional on the brilliant boat must be that the position order from top to bottom according to regional reduces successively, and the heat budget of each wafer that brilliant boat upper area loads must be with the heat budget of each wafer of loading much larger than brilliant boat lower region.
So, in technical scheme of the present invention, also need by step 402 as described below, reduce in whole technical process, to be loaded in the difference of the total heat budget between each wafer in the regional of brilliant boat.
That is to say, in this step, to load the stage at brilliant boat, vacuumizing phase, the leak detection stage, the rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase, the temperature of each warm area in the well heater of adjustment boiler tube, difference with the heat budget between each wafer in the regional that reduces to be loaded in brilliant boat, or so that the heat budget that is loaded between each wafer in the regional of brilliant boat reduce successively according to the position order from the bottom up of regional, thereby reduce in whole technical process, to be loaded in the difference of the total heat budget between each wafer in the regional of brilliant boat, to improve the electric property of semiconductor components and devices.
In addition, in an embodiment of the present invention, above-mentioned steps 401 and step 402 can be carried out simultaneously, also can be taken up in order of priority execution, the execution sequence of therefore not determining between two steps.
In an embodiment of the present invention, can realize above-mentioned step 402 by numerous embodiments.Below will technical scheme of the present invention be described in detail in the mode of several specific embodiments.
Embodiment one,
Fig. 5 is the method flow diagram of embodiment one among the present invention.Fig. 6 is the temperature curve synoptic diagram among the embodiment one among the present invention.In conjunction with Fig. 5, shown in Figure 6, can realize above-mentioned steps 402 by step as described below:
Step 501 is loaded the stage at brilliant boat, and the temperature of each warm area in the well heater of boiler tube progressively is increased to same predetermined temperature value.
In the brilliant boat loading stage in the prior art, the temperature of each warm area in the well heater of boiler tube will progressively be elevated to different temperature values, as shown in Figure 3.Therefore, when the brilliant boat loading stage finished, the temperature of above-mentioned each warm area was not identical, and the temperature value of each warm area reduces successively according to the position order from top to bottom of each warm area.For example, the temperature value of top warm area is greater than the temperature value of bottom warm area.Therefore, the wafer that is loaded in different zones on the brilliant boat is at resulting heat budget of this stage and unequal, and for example, the heat budget that is loaded in the wafer of brilliant boat upper area will be greater than the heat budget of the wafer that is loaded in brilliant boat lower region, and the difference of heat budget is larger.
And in this step, the temperature that can regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater is so that the temperature of each warm area all progressively is elevated to same predetermined temperature value.After the temperature of each warm area all reaches predetermined temperature value, can keep the temperature of all warm areas no longer to change, as shown in Figure 6.At this moment, above-mentioned reservation temperature value can be the temperature value of finishing the top warm area after the brilliant boat loading stage in the prior art, also can be other predefined temperature value.For example, the span of described predetermined temperature value can for: 684～688 ℃.Better, in specific embodiments of the invention, described predetermined temperature value can be 685 ℃, 686.6 ℃ or 687.9 ℃ etc.In this step because the temperature value of described each warm area equates all the time, therefore be loaded in different zones on the wafer each wafer will equate at resulting heat budget of this stage.
Step 502 in vacuumizing phase, is kept the temperature-resistant of each warm area.
In this step, because the temperature value of described each warm area is all equal, therefore can continue to keep the temperature-resistant of each warm area, as shown in Figure 6.At this moment, each wafer that loads on the brilliant boat will equate at resulting heat budget of this stage.
And in the vacuumizing phase in the prior art, the position order from top to bottom that the temperature value of each warm area remains according to each warm area reduces successively, as shown in Figure 3, therefore, be loaded in wafer resulting heat budget and unequal in described vacuumizing phase of different zones on the brilliant boat.
Step 503 in the leak detection stage, is progressively adjusted the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area is reduced to each predetermined temperature value successively according to the position order from top to bottom of each warm area.
Specifically, in this step, the temperature that can regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater, progressively reduce the temperature of upper middle part warm area, middle part warm area, middle and lower part warm area and bottom warm area, thereby so that the temperature value of each warm area is reduced to each predetermined temperature value successively according to the position order from top to bottom of each warm area, as shown in Figure 6, be beneficial to enter reposefully follow-up steady stage and depositional phase, carry out the depositing operation of film.
Wherein, in specific embodiments of the invention, described each predetermined temperature value can be respectively the temperature value of upper middle part warm area, middle part warm area, middle and lower part warm area and the bottom warm area in leak detection stage of the prior art, also can be other predefined a plurality of temperature values.
In this step, although after carrying out the temperature adjustment, the temperature of each warm area is no longer equal, but because the temperature of each warm area lowers from same temperature, therefore, after finishing the above-mentioned leak detection stage, be loaded in the maximum heat budget difference between each wafer of different zones on the wafer, will less than be loaded in the leak detection of the prior art stage different zones on the wafer each wafer between maximum heat budget difference.
Hence one can see that, by above-mentioned steps 501～503, can reduce widely brilliant boat load stage, vacuumizing phase and the wafer that causes in the leak detection stage on heat budget difference between each wafer of loading, thereby reduce the difference of the total heat budget between each wafer in whole technical process.
Embodiment two,
Fig. 7 is the method flow diagram of embodiment two among the present invention.Fig. 8 is the temperature curve synoptic diagram among the embodiment two among the present invention.In conjunction with Fig. 7, shown in Figure 8, can realize above-mentioned steps 402 by step as described below:
Step 701 is loaded the stage at brilliant boat, and the temperature of each warm area in the well heater of boiler tube progressively is increased to each default temperature value, so that the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area.
In the prior art, when the brilliant boat loading stage finished, the temperature value of the temperature of each warm area will reduce successively according to the position order from top to bottom of each warm area, and namely the temperature of bottom warm area will be less than the temperature of top warm area, as shown in Figure 3.
And in this step, the temperature that then can regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater is so that the temperature of each warm area all progressively is elevated to each default temperature value in the brilliant boat loading stage.After the temperature of each warm area all reaches separately predetermined temperature value, can keep the temperature of all warm areas no longer to change.At this moment, the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area, and namely the temperature of bottom warm area will be greater than the temperature of top warm area, as shown in Figure 8.
Wherein, the corresponding predetermined temperature value of above-mentioned each warm area can preset according to actual needs.For example, can be with the top warm area in this step, upper middle part warm area, middle part warm area, middle and lower part warm area and the corresponding predetermined temperature value of bottom warm area, be set to respectively the bottom warm area after finishing the brilliant boat loading stage in the prior art, middle and lower part warm area, middle part warm area, on the temperature value of middle part warm area and top warm area, as shown in Figure 8; Perhaps, also can be with the top warm area in this step, upper middle part warm area, middle part warm area, middle and lower part warm area and the corresponding predetermined temperature value of bottom warm area, five predetermined temperature values that are set to respectively be arranged in order from low to high.
In this step, because the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area, therefore each wafer that is loaded in different zones on the wafer is also also unequal at resulting heat budget of this stage, for example, being loaded in each wafer of brilliant boat lower region will be greater than each wafer that is loaded in brilliant boat upper area at resulting heat budget of this stage at resulting heat budget of this stage.
Step 702 in vacuumizing phase, is kept the temperature-resistant of each warm area.
In this step, because the temperature value of described each warm area is also unequal, therefore each wafer that is loaded in different zones on the wafer is also also unequal at resulting heat budget of this stage, for example, being loaded in each wafer of brilliant boat lower region still will be greater than each wafer that is loaded in brilliant boat upper area at resulting heat budget of this stage at resulting heat budget of this stage.
Step 703 in the leak detection stage, is progressively adjusted the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area.
Specifically, in this step, the temperature that can regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater, so that when finishing in the leak detection stage, the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area, as shown in Figure 8, be beneficial to enter reposefully follow-up steady stage and depositional phase, carry out the depositing operation of film.
Because in the follow-up steady stage and depositional phase, the resulting heat budget of each wafer that is loaded in brilliant boat lower region will be less than the resulting heat budget of each wafer that is loaded in brilliant boat upper area, therefore, by above-mentioned steps 701～step 703, can partly or entirely balance out in advance each wafer issuable heat budget difference in follow-up steady stage and depositional phase, thereby reduce the difference of the total heat budget between each wafer in whole technical process.
Hence one can see that, by above-mentioned steps 701～703, also can reduce widely the heat budget difference between each wafer in whole technical process.
Embodiment three,
Fig. 9 is the method flow diagram of embodiment three among the present invention.Figure 10 is the temperature curve synoptic diagram among the embodiment three among the present invention.In conjunction with Fig. 9, shown in Figure 10, can realize above-mentioned steps 402 by step as described below:
Step 901 in the rear removing stage, progressively is increased to same predetermined temperature value with the temperature of each warm area in the well heater of boiler tube.
As shown in Figure 3, in the rear removing stage in the prior art, the temperature value of each warm area in the well heater of boiler tube reduces successively according to the position order from top to bottom of each warm area.For example, the temperature value of top warm area is greater than the temperature value of bottom warm area.Therefore, be loaded in the wafer of different zones on the brilliant boat at resulting heat budget of this stage and unequal, for example, the heat budget that is loaded in the wafer of brilliant boat upper area will be greater than the heat budget of the wafer that is loaded in brilliant boat lower region.
And as shown in figure 10, in this step, the temperature that can regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater, in the rear removing stage so that the temperature of each warm area all progressively is elevated to same predetermined temperature value.After the temperature of each warm area all reaches predetermined temperature value, can keep the temperature of all warm areas no longer to change.At this moment, above-mentioned reservation temperature value can be the temperature value of the top warm area in the rear removing stage of the prior art, also can be other predefined temperature value.For example, the span of described predetermined temperature value can for: 684～688 ℃.
In this step, because the temperature value of described each warm area equates the most at last, therefore, after finishing the described rear removing stage, be loaded in the maximum heat budget difference between each wafer of different zones on the wafer, will less than be loaded in the rear removing stage of the prior art different zones on the wafer each wafer between maximum heat budget difference.
Step 902 is being returned the pressure stage, keeps the temperature-resistant of each warm area.
As shown in figure 10, in this step, because the temperature value of described each warm area is all equal, therefore can continue to keep the temperature-resistant of each warm area.At this moment, each wafer that loads on the brilliant boat will equate at resulting heat budget of this stage.
And as shown in Figure 3, in the prior art return pressure in the stage, the position order from top to bottom that the temperature value of each warm area remains according to each warm area reduces successively, and therefore, the wafer that is loaded in different zones on the brilliant boat is at the described pressure resulting heat budget and unequal in the stage that returns.
Step 903 at brilliant boat unloading phase, progressively reduces the temperature of each warm area in the well heater of boiler tube.
As shown in Figure 3, in the prior art, before brilliant boat unloading phase, the temperature value of each warm area is different (namely are according to each warm area position order from top to bottom reduce successively), therefore in brilliant boat unloading phase, the temperature of each warm area will progressively descend from different temperature values.So, be loaded in different zones on the wafer each wafer resulting heat budget and unequal in described brilliant boat unloading phase, for example, the heat budget that is loaded in the wafer of brilliant boat upper area will be greater than the heat budget of the wafer that is loaded in brilliant boat lower region.
And as shown in figure 10, in this step, the temperature that can regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater progressively reduces the temperature of each warm area in the well heater of boiler tube.Because the temperature of each warm area progressively descends from same temperature, the temperature value of each warm area equates all the time, therefore be loaded in different zones on the wafer each wafer will equate at resulting heat budget of this stage.
Hence one can see that, by above-mentioned steps 901～903, can reduce widely in the rear removing stage, return the difference between the heat budget of each wafer that loads on the wafer that causes in pressure stage and the brilliant boat unloading phase, thereby reduce the difference of the total heat budget between each wafer in whole technical process.
Embodiment four,
Figure 11 is the method flow diagram of embodiment four among the present invention.Figure 12 is the temperature curve synoptic diagram among the embodiment four among the present invention.In conjunction with Figure 11, shown in Figure 12, can realize above-mentioned steps 402 by step as described below:
As shown in Figure 3, in the prior art, when the brilliant boat loading stage finished, the temperature value of the temperature of each warm area will reduce successively according to the position order from top to bottom of each warm area, and namely the temperature of bottom warm area will be less than the temperature of top warm area.
And as shown in figure 12, in this step, the temperature that then can regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater is so that the temperature of each warm area all progressively changes to each default temperature value in the rear removing stage.After the temperature of each warm area all reaches separately predetermined temperature value, can keep the temperature of all warm areas no longer to change.At this moment, the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area, and namely the temperature of bottom warm area will be greater than the temperature of top warm area.
Wherein, the corresponding predetermined temperature value of above-mentioned each warm area can preset according to actual needs.For example, can be with the top warm area in this step, upper middle part warm area, middle part warm area, middle and lower part warm area and the corresponding predetermined temperature value of bottom warm area, be set to respectively the bottom warm area after finishing the brilliant boat loading stage in the prior art, middle and lower part warm area, middle part warm area, on the temperature value of middle part warm area and top warm area, as shown in figure 12; Perhaps, also can be with the top warm area in this step, upper middle part warm area, middle part warm area, middle and lower part warm area and the corresponding predetermined temperature value of bottom warm area, five predetermined temperature values that are set to respectively be arranged in order from low to high.
In this step, because the temperature value of described each warm area is also unequal, therefore the heat budget that is loaded in each wafer of different zones on the wafer is also unequal, for example, each wafer of loading of brilliant boat lower region each wafer that will load greater than this crystalline substance boat upper area at resulting heat budget of this stage is at resulting heat budget of this stage.
As shown in figure 12, in this step, because the temperature value of described each warm area is also unequal, therefore each wafer that is loaded in different zones on the wafer is also also unequal at resulting heat budget of this stage, for example, being loaded in each wafer of brilliant boat lower region will be greater than each wafer that is loaded in brilliant boat upper area at resulting heat budget of this stage at resulting heat budget of this stage.
As shown in Figure 3, in the prior art, before brilliant boat unloading phase, the temperature value of each warm area is that the position order from top to bottom according to each warm area reduces successively, therefore in brilliant boat unloading phase, the temperature of each warm area will progressively descend from different temperature values.So each wafer resulting heat budget in described brilliant boat unloading phase that is loaded in different zones on the wafer is also unequal, for example, the heat budget that is loaded in the wafer of brilliant boat upper area will be greater than the heat budget of the wafer that is loaded in brilliant boat lower region.
And as shown in figure 12, in this step, can progressively reduce by the temperature regulator in each warm area in the well heater temperature of each warm area in the well heater.Because when brilliant boat unloading phase began, the temperature value of each warm area increased successively according to the position order from top to bottom of each warm area, therefore, the temperature of each warm area will progressively descend from different temperature values.So each wafer resulting heat budget in described brilliant boat unloading phase that is loaded in different zones on the wafer is also unequal, for example, the heat budget that is loaded in the wafer of brilliant boat upper area will be less than the heat budget of the wafer that is loaded in brilliant boat lower region.Just the opposite with situation of the prior art.
Because in aforesaid steady stage and depositional phase, the heat budget of each wafer that the heat budget of each wafer that brilliant boat lower region loads will load less than this crystalline substance boat upper area, therefore, by above-mentioned steps 1101～step 1103, can partly or entirely offset in the brilliant boat between each wafer issuable heat budget difference in aforesaid steady stage and depositional phase, thereby reduce the difference of the total heat budget between each wafer in whole technical process.
Hence one can see that, by above-mentioned steps 1101～1103, also can reduce widely the difference of the total heat budget between each wafer in whole technical process.
Embodiment five,
Figure 13 is the method flow diagram of embodiment five among the present invention.As shown in figure 13, can realize above-mentioned steps 402 by step as described below:
In any one stage in the prior art, the temperature of each warm area in the well heater of boiler tube is not identical, and the temperature value of each warm area reduces successively according to the position order from top to bottom of each warm area.Therefore, the heat budget that is loaded between each wafer in the regional of brilliant boat reduces successively according to the position order from top to bottom of regional, and the heat budget of wafer that is loaded in brilliant boat upper area is larger with the difference of the heat budget of the wafer that is loaded in brilliant boat lower region.
And in this step, the temperature that will regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater is so that the temperature of each warm area all progressively is elevated to same predetermined temperature value.At this moment, above-mentioned reservation temperature value can be the temperature value of finishing the top warm area after the brilliant boat loading stage in the prior art, also can be other predefined temperature value.For example, the span of described predetermined temperature value can for: 684～688 ℃.Better, in specific embodiments of the invention, described predetermined temperature value can be 685 ℃, 686.6 ℃ or 687.9 ℃ etc.
In this step, because the temperature of each warm area will equate gradually, therefore can progressively reduce to be loaded in the difference of the heat budget between each wafer in the regional of brilliant boat.
After the temperature of each warm area all reaches predetermined temperature value, can carry out next step 1302.
In this step, because the temperature value of described each warm area is all equal, therefore can within the predetermined time, continue to keep the temperature-resistant of each warm area, within described predetermined time, the resulting heat budget of each wafer that loads on the brilliant boat will equate.
Specifically, in this step, the temperature that can regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater, progressively reduce the temperature of upper middle part warm area, middle part warm area, middle and lower part warm area and bottom warm area, thereby so that the temperature value of each warm area is reduced to each predetermined temperature value successively according to the position order from top to bottom of each warm area, be beneficial to enter reposefully the follow-up next stage.
Wherein, in this step, described each predetermined temperature value can be respectively the temperature value of upper middle part warm area, middle part warm area, middle and lower part warm area and the bottom warm area of depositional phase of the prior art.
In this step, although after carrying out the temperature adjustment, the temperature of each warm area is no longer equal, but because the temperature of each warm area lowers from same temperature, therefore, after carrying out this step, can further reduce to be loaded in the difference of the heat budget between each wafer in the regional of brilliant boat.
Hence one can see that, by above-mentioned steps 1301～1303, also can reduce the difference of the total heat budget between each wafer in whole technical process.
Embodiment six,
Figure 14 is the method flow diagram of embodiment six among the present invention.As shown in figure 14, can realize above-mentioned steps 402 by step as described below:
Step 1401, load stage, vacuumizing phase, leak detection stage, rear removing stage, return in any one stage in pressure stage and the brilliant boat unloading phase at described brilliant boat, the temperature of each warm area in the well heater of boiler tube progressively is increased to each default temperature value, so that the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area;
In any one stage in the prior art, the temperature of each warm area in the well heater of boiler tube is not identical, and the temperature value of each warm area reduces successively according to the position order from top to bottom of each warm area.Therefore, the heat budget that is loaded between each wafer in the regional of brilliant boat reduces successively according to the position order from top to bottom of regional, and the heat budget that is loaded in the wafer of brilliant boat upper area will be far longer than the heat budget of the wafer that is loaded in brilliant boat lower region.
And in this step, the temperature that then can regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater, so that the temperature of each warm area all progressively is elevated to each default temperature value in the brilliant boat loading stage, therefore and the temperature value of each warm area increases successively according to the position order from top to bottom of each warm area, can progressively reduce to be loaded in the difference of the heat budget between each wafer in the regional of brilliant boat.
After the temperature of each warm area all reaches predetermined temperature value, can carry out next step 1402.
Step 1402 within the predetermined time, is kept the temperature-resistant of each warm area.
In this step, because the temperature value of described each warm area is all equal, therefore can within the predetermined time, continue to keep the temperature-resistant of each warm area.
In this step, because the temperature value of described each warm area is also unequal, therefore each wafer that is loaded in different zones on the wafer is also also unequal at resulting heat budget of this stage, even can be so that be loaded in the wafer heat budget in this step of brilliant boat upper area less than the heat budget of the wafer that is loaded in brilliant boat lower region, thereby can further reduce to be loaded in the difference of the heat budget between each wafer in the regional of brilliant boat.
Step 1403 is progressively adjusted the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area.
Specifically, in this step, the temperature that can regulate each warm area in the well heater by the temperature regulator in each warm area in the well heater, so that the temperature value of described each warm area is reduced to each predetermined temperature value successively according to the position order from top to bottom of each warm area, be beneficial to enter reposefully the follow-up next stage.
Wherein, in this step, described each predetermined temperature value can be respectively the temperature value of upper middle part warm area, middle part warm area, middle and lower part warm area and the bottom warm area of depositional phase of the prior art.
Because in follow-up stages, the resulting heat budget of each wafer that is loaded in brilliant boat lower region will be less than the resulting heat budget of each wafer that is loaded in brilliant boat upper area, therefore, by above-mentioned steps 1401～step 1403, but partial offset falls each wafer issuable heat budget difference in follow-up stages, thereby reduces the difference of the total heat budget between each wafer in whole technical process.
Hence one can see that, by above-mentioned steps 1401～1403, also can reduce widely the difference of the total heat budget between each wafer in whole technical process.
Above embodiment one～embodiment six is be used to several embodiments that illustrate technical solution of the present invention, in an embodiment of the present invention, also can use other embodiment.Other embodiment does not repeat them here.
In addition, six above-mentioned embodiment all can use separately, also can be used in combination by reasonable manner, for example, embodiment one and embodiment three are used in combination, embodiment one and embodiment four are used in combination, embodiment two and embodiment three are used in combination, embodiment two and embodiment four are used in combination etc.Wherein, when embodiment two and embodiment four are used in combination, might obtain better effect.Concrete array mode does not repeat them here.
In addition, according to the experimental result of reality as can be known, after the method for the above-mentioned use LPCVD process deposits film that in using embodiments of the invention, provides, effectively reduced in the forming process of film, to be loaded in the heat budget difference between each wafer on the brilliant boat, so that it is smaller to be loaded on the brilliant boat on each wafer in the regional variation range of the saturation currnet of formed semiconductor components and devices, thereby greatly improved the electric property of formed semiconductor components and devices.
In summary, the method of above-mentioned use LPCVD process deposits film is provided in an embodiment of the present invention, because in the method, by loading the stage at brilliant boat, vacuumizing phase, the leak detection stage, the rear removing stage, return in pressure stage and the brilliant boat unloading phase, respectively the temperature of each warm area in the well heater of boiler tube is adjusted, thereby effectively reduced in the forming process of film, to be loaded in the heat budget difference between each wafer on the brilliant boat, improved the electric property of semiconductor components and devices, improve the yield of the semiconductor components and devices of producing, reduced manufacturing cost.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of making within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. method of using the low-pressure chemical vapor deposition process deposit film, the method comprises: brilliant boat loads stage, vacuumizing phase, leak detection stage, steady stage, depositional phase, rear removing stage, returns pressure stage and brilliant boat unloading phase; Wherein,
In steady stage and depositional phase, keep the temperature-resistant of each warm area in the well heater of boiler tube, and the temperature value of each warm area reduces successively according to the position order from top to bottom of each warm area;
Load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of each warm area in the well heater of adjustment boiler tube, with the difference of the heat budget between each wafer in the regional that reduces to be loaded in brilliant boat, or so that the heat budget that is loaded between each wafer in the regional of brilliant boat reduce successively according to the position order from the bottom up of regional.
2. method according to claim 1, it is characterized in that, describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
Load the stage at brilliant boat, the temperature of each warm area in the well heater of boiler tube progressively is increased to same predetermined temperature value;
In vacuumizing phase, keep the temperature-resistant of each warm area;
In the leak detection stage, progressively adjust the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area.
3. method according to claim 1, it is characterized in that, describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
Load the stage at brilliant boat, the temperature of each warm area in the well heater of boiler tube progressively is increased to each default temperature value, so that the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area;
In vacuumizing phase, keep the temperature-resistant of each warm area;
In the leak detection stage, progressively adjust the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area.
4. method according to claim 1, it is characterized in that, describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
In the rear removing stage, the temperature of each warm area in the well heater of boiler tube progressively is increased to same predetermined temperature value;
Return the pressure stage, keeping the temperature-resistant of each warm area;
At brilliant boat unloading phase, progressively reduce the temperature of each warm area in the well heater of boiler tube.
5. method according to claim 1, it is characterized in that, describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
In the rear removing stage, progressively adjust the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area;
Return the pressure stage, keeping the temperature-resistant of each warm area;
At brilliant boat unloading phase, progressively reduce the temperature of each warm area in the well heater of boiler tube.
6. method according to claim 1, it is characterized in that, describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
Load stage, vacuumizing phase, leak detection stage, rear removing stage, return in any one stage in pressure stage and the brilliant boat unloading phase at described brilliant boat, the temperature of each warm area in the well heater of boiler tube progressively is increased to same predetermined temperature value;
Within the predetermined time, keep the temperature-resistant of each warm area;
Progressively adjust the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area.
7. method according to claim 1, it is characterized in that, describedly load stage, vacuumizing phase, leak detection stage, rear removing stage, return at least one stage in pressure stage and the brilliant boat unloading phase at brilliant boat, the temperature of adjusting each warm area in the well heater of boiler tube comprises:
Load stage, vacuumizing phase, leak detection stage, rear removing stage, return in any one stage in pressure stage and the brilliant boat unloading phase at described brilliant boat, the temperature of each warm area in the well heater of boiler tube progressively is increased to each default temperature value, so that the temperature value of described each warm area increases successively according to the position order from top to bottom of each warm area;
Within the predetermined time, keep the temperature-resistant of each warm area;
Progressively adjust the temperature of each warm area in the well heater of boiler tube, so that the temperature value of described each warm area reduces successively according to the position order from top to bottom of each warm area.
8. according to claim 2,4 or 6 described methods, it is characterized in that,
The span of described predetermined temperature value is: 684～688 ℃.
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| US5688116A (en) * | 1994-05-17 | 1997-11-18 | Tokyo Electron Limited | Heat treatment process |
| CN101019210A (en) * | 2004-11-08 | 2007-08-15 | 株式会社日立国际电气 | Semiconductor device manufacturing method and substrate treating apparatus |
| CN101067996A (en) * | 2006-03-17 | 2007-11-07 | 通用电气公司 | Semiconductor batch heating subassembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5688116A (en) * | 1994-05-17 | 1997-11-18 | Tokyo Electron Limited | Heat treatment process |
| CN101019210A (en) * | 2004-11-08 | 2007-08-15 | 株式会社日立国际电气 | Semiconductor device manufacturing method and substrate treating apparatus |
| CN101067996A (en) * | 2006-03-17 | 2007-11-07 | 通用电气公司 | Semiconductor batch heating subassembly |
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