CN113249786A - Gas inlet structure and semiconductor process equipment - Google Patents
Gas inlet structure and semiconductor process equipment Download PDFInfo
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- CN113249786A CN113249786A CN202110511173.XA CN202110511173A CN113249786A CN 113249786 A CN113249786 A CN 113249786A CN 202110511173 A CN202110511173 A CN 202110511173A CN 113249786 A CN113249786 A CN 113249786A
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- air inlet
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention discloses a gas inlet structure and semiconductor process equipment, and relates to the technical field of chemical vapor deposition epitaxial growth. The gas inlet structure may be used to introduce a gas into a process chamber of a semiconductor processing apparatus. The air inlet structure comprises an air inlet seat and an air inlet insert. The air inlet seat comprises a plurality of air flow distribution cavities, a plurality of groups of air flow distribution holes and a plurality of groups of air inlet channels, wherein the plurality of groups of air inlet channels are parallel to each other. Each air distribution cavity corresponds to at least one group of air distribution holes and is communicated with at least one group of air inlet channels through the air distribution holes, and the air distribution holes are integrally formed with the air distribution cavities and/or the air inlet channels; the air inlet end of the air inlet plug-in is communicated with the air inlet channel, and the air outlet end of the air inlet plug-in is communicated with the process chamber. The scheme can solve the problem that the process parameters of the airflow drift when the machine or the machine cooler is maintained in different states.
Description
Technical Field
The invention relates to the technical field of chemical vapor deposition epitaxial growth, in particular to a gas inlet structure and semiconductor process equipment.
Background
The chemical vapor deposition epitaxial growth is to convey reaction gas to a reaction chamber, react the reaction gas by heating and the like, grow atoms and deposit the atoms on a substrate, and grow a single crystal layer. The reaction mechanism according to the CVD (chemical Vapor deposition) technique is known as follows: the excellent epitaxial process results must be achieved by the presence of uniformly distributed gas flow, temperature and concentration fields near the substrate surface.
In the related art, the epitaxial process chamber includes a stainless gas inlet block, a quartz rectifying plate, and a gas inlet tube, wherein the rectifying plate is located between the gas inlet block and the gas inlet tube, and divides a gas entering the gas inlet block into a plurality of gas flows through the rectifying plate, so as to improve uniformity of gas flow distribution. The rectifying plate and the air inlet seat are made of rigid materials, flatness deviation necessarily exists in the machining of the contact surface of the rectifying plate and the air inlet seat, and then assembly gaps exist between the rectifying plate and the air inlet seat and between the rectifying plate and the air inlet pipe, so that a plurality of air flows are mutually connected in series, and the flow distribution precision of flow distribution and air inlet cannot be guaranteed. Especially, in two different states of the refrigerator and the heat engine, the difference of the expansion coefficients of the stainless steel and the quartz can cause the assembly gaps between the rectifying plate and the gas inlet seat and between the rectifying plate and the gas inlet pipe to have larger fluctuation, thereby causing the problem that the process parameters of the gas flow drift when the machine or the refrigerator and the heat engine of the machine are maintained in different states.
Disclosure of Invention
The invention discloses an air inlet structure, which aims to solve the problem that technological parameters of airflow drift when a machine or a machine cooler is maintained in different states.
In order to solve the problems, the invention adopts the following technical scheme:
an air intake structure. The gas inlet structure may be used to introduce a gas into a process chamber of a semiconductor processing apparatus. The air inlet structure comprises an air inlet seat and an air inlet plug-in; wherein the content of the first and second substances,
the air inlet seat comprises a plurality of air flow distribution cavities, a plurality of groups of air flow distribution holes and a plurality of groups of air inlet channels, and the plurality of groups of air inlet channels are parallel to each other;
each air distribution cavity corresponds to at least one group of air distribution holes and is communicated with at least one group of air inlet channels through the air distribution holes, and the air distribution holes are integrally formed with the air distribution cavities and/or the air inlet channels;
the air inlet end of the air inlet plug-in is communicated with the air inlet channel, and the air outlet end of the air inlet plug-in is communicated with the process chamber.
A semiconductor processing device comprises the gas inlet structure.
The technical scheme adopted by the invention can achieve the following beneficial effects:
the air inlet structure disclosed by the embodiment of the invention comprises an air inlet seat and an air inlet plug-in unit, wherein the air inlet seat comprises a plurality of air flow distribution cavities, a plurality of groups of air flow distribution holes and a plurality of groups of air inlet channels, and the plurality of groups of air inlet channels are parallel to each other; each air distribution cavity corresponds to at least one group of air distribution holes and is communicated with at least one group of air inlet channels through the air distribution holes, and the air distribution holes are integrally formed with the air distribution cavities and/or the air inlet channels; the air inlet end of the air inlet plug-in is communicated with the air inlet channel, and the air outlet end of the air inlet plug-in is communicated with the process chamber. Like this, gas is through the air current distribution chamber, the air current distribution hole distributes, the rethread corresponds the intake duct gets into the plug-in components that admits air, can realize the even reposition of redundant personnel of air current and get into the process chamber, and because air current distribution hole and air current distribution chamber and/or intake duct body structure, make the air inlet end of the air current distribution hole in this air inlet structure not have because of the unable problem sealed or the poor problem of leakproofness that the fitting surface leads to, can guarantee the leakproofness of air current distribution hole air inlet end and air current distribution hole, and then there is the problem of series flow when can avoid the secondary distribution of cowling panel department air current among the correlation technique, can also guarantee the stability of process parameter under the condition of maintaining different states such as board or board cold machine, avoid semiconductor process equipment's process parameter to drift.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a cross-sectional view of a process chamber disclosed in an embodiment of the invention;
FIG. 2 is a top view of a process chamber disclosed in an embodiment of the invention;
FIG. 3 is a right side sectional view of the air inlet seat according to the embodiment of the present invention;
FIG. 4 is a block diagram of an air inlet seat disclosed in an embodiment of the present invention;
FIG. 5 is a top cross-sectional view of an air induction seat marked with an invisible contour line in accordance with an embodiment of the present invention;
fig. 6 is a top sectional view of the air intake seat disclosed in the embodiment of the present invention.
Description of reference numerals:
100-an air inlet seat;
110-an airflow distribution chamber; 120-an air flow distribution aperture; 130-air inlet channel; 140-a shielding gas channel; 150-air inlet; 160-gas flow distribution conduits;
200-an air inlet insert;
210-a first gas path; 220-a second gas path;
300-process chamber.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to fig. 1 to 6.
The gas inlet structure disclosed in one embodiment of the present invention may be used to introduce a gas into the process chamber 300 of a semiconductor processing tool.
Referring to fig. 1 to 5, an intake structure disclosed in the practice of the present invention may include an intake holder 100 and an intake insert 200. The air inlet seat 100 may include a plurality of air flow distribution cavities 110, a plurality of sets of air flow distribution holes 120, and a plurality of sets of air inlet channels 130. The plurality of sets of inlet channels 130 may be arranged parallel to each other. Each air distribution cavity 110 corresponds to at least one set of air distribution holes 120 and is communicated with at least one set of air inlet channels 130 through the air distribution holes 120, and the air distribution holes 120 are integrally formed with the air distribution cavities 110 and/or the air inlet channels 130. The inlet end of the inlet insert 200 communicates with the inlet channel 130 and the outlet end of the inlet insert 200 communicates with the process chamber 300.
In the above embodiment, the air distribution holes 120 are integrally formed with the air distribution cavity 110 and/or the air inlet 130, so as to avoid the influence of the processing precision of the parts, the assembly precision between the parts, and the working state of the semiconductor processing equipment on the sealing performance of the air inlet seat 100 in the air channel, and further avoid the problem that the air inlet ends of the air distribution holes 120 in the related art are prone to air leakage due to the fact that the assembly matching surfaces are not sealed or the sealing performance is poor. In addition, the air inlet structure can ensure the air inlet end of the air flow distribution hole 120 and the air flow distribution hole 120 to be sealed in different working states or working environments, and further ensure the stability of process parameters under the conditions of maintaining different states of a machine table or a machine cooler heat engine and the like. Specifically, the inlet seat 100 may be an integral structure. Further, the air inlet seat 100 may be integrally formed of the same material, so that the thermal expansion coefficients of the portions of the air inlet seat 100 are the same, and further, the internal stress of the air inlet seat 100 may be reduced and the service life of the air inlet seat 100 may be prolonged under the condition that the air inlet seat 100 is heated or cooled. Alternatively, the inlet 100 may be integrally formed of stainless steel.
Alternatively, the air distribution holes 120 and the air distribution chamber 110 and/or the air inlet 130 may be formed as a single structure by machining and/or welding. Of course, the gas distribution holes 120 and the gas distribution chamber 110 and/or the gas inlet 130 are formed integrally by a variety of methods, such as casting and cutting. Therefore, the present application does not limit a specific processing method for manufacturing the intake seat 100.
Alternatively, the air distribution holes 120 may be cylindrical through holes. Specifically, the aperture of the air distribution hole 120 may be 3.0mm to 3.2 mm. The shape of the air distribution holes 120 may be many, for example: a square hole, an elliptical hole, an oblong through hole, or the like, and for this reason, the present invention does not limit the specific shape of the air distribution hole 120.
Referring to fig. 3, the air inlet direction of the air distribution hole 120 may be perpendicular to the air inlet direction of the air inlet 130, so that the air distributed by the air distribution hole 120 enters the air inlet 130 perpendicular to the air inlet direction of the air inlet 130, and further, the flow velocity of the air in the air inlet 130 may be reduced, and the air flow enters the air inlet insert 200 more slowly and smoothly along the air inlet 130. The air inlet direction of the air distribution hole 120 refers to the flow direction of the air flowing from the air distribution hole 120 into the air inlet channel 130. The air inlet direction of the air inlet 130 refers to the direction of the air flow moving along the air distribution hole 120 after the air flow enters the air inlet 130 from the air distribution hole 120.
Referring to fig. 3, when the air flows along the air distribution holes 120 and enters the air inlet 130 from the air distribution holes 120, the air flow may flow in a direction perpendicular to a channel wall of the air inlet 130 opposite to the air distribution holes 120, so that the air flow may spread along the channel wall. Alternatively, the channel walls of the inlet channel 130 opposite the air distribution apertures 120 may be planar, such that the air entering the inlet channel 130 may spread evenly along the channel walls of the inlet channel 130 opposite the air distribution apertures 120, and the air may flow more smoothly along the inlet channel 130 to the inlet insert 200.
Referring to fig. 1, the plurality of groups of inlet channels 130 may be uniformly distributed at the inlet end of the inlet insert 200, and the inlet direction of the inlet channels 130 is the same as the inlet direction of the inlet insert 200. The air inlet channels 130 are evenly distributed at the air inlet end of the air inlet insert 200, which may improve the uniformity of the airflow throughout the air inlet insert 200. The air inlet direction of the air inlet channel 130 is the same as the air inlet direction of the air inlet plug-in unit 200, so that the change of the air flow direction in the process that the air flow enters the air inlet plug-in unit 200 from the air inlet channel 130 can be avoided, the uneven local air flow of the air inlet plug-in unit 200 caused by the change of the air flow direction is further avoided, and the air flow can uniformly enter the air inlet plug-in unit 200.
Referring to fig. 2, in an alternative embodiment, the inlet direction of the inlet 130, the inlet direction of the inlet insert 200, and the inlet direction of the process chamber 300 are the same, so that the gas flow may pass through a longer straight gas flow path before entering the process chamber 300.
In the above embodiment, the air inlet 130 may restrict the flow direction of the air entering the air distribution holes 120 to the air inlet 130, so that the air flows parallel into the air inlet insert 200 and the process chamber 300 along the air inlet direction of the air inlet insert 200 after the air inlet 130 is filled with the air, and then the fluctuation, turbulence and/or convection vortex of the air flow in the process chamber 300 is reduced or avoided, thereby facilitating to improve the uniformity of the thickness and resistivity of the grown film.
Referring to fig. 1, 4 and 5, in an alternative embodiment, the plurality of air flow distribution cavities 110, the plurality of sets of inlet channels 130 and the plurality of sets of air flow distribution holes 120 are symmetrically distributed about a central axis of the inlet end of the inlet insert 200, so that air flows on both sides of the central axis of the inlet end of the inlet insert 200 are symmetrical to each other, thereby ensuring uniformity of air flow at the symmetrical portions of the inlet insert 200 about the central axis.
Referring to fig. 4 and 5, in an alternative embodiment, each air distribution chamber 110 may communicate with at least one air inlet channel 130 through an air distribution hole 120, such that the air inlet seat 100 may be divided into a plurality of air inlet regions by a plurality of air distribution chambers 110. Optionally, the air inlet 100 includes five air flow distribution cavities 110, and the five air flow distribution cavities 110 may be symmetrically distributed about a central axis of an air inlet end of the air inlet insert 200, so that the air inlet 100 may adjust the size of the air flow in the corresponding air inlet 130 by adjusting the size of the air flow in the air flow distribution cavities 110, thereby improving the air inlet adjusting capability of the air inlet 100, and adjust the size of the air flow in the corresponding area of the process chamber 300 by adjusting the size of the air flow in each air inlet area, so that the sizes of the air flows in the areas of the process chamber 300 are equal, and the uniformity of the air flow in the process chamber 300 is improved.
Referring to fig. 5 and 6, the inlet block 100 may further include a plurality of inlet ports 150, each inlet port 150 corresponding to at least one airflow distribution chamber 110. In this embodiment, the airflow in the corresponding airflow distribution chamber 110 can be adjusted by adjusting the airflow of each of the air inlets 150. The inlet block 100 is provided with a plurality of inlets 150, so that the flow of the gas distribution chamber 110 connected to different inlets 150 can be independently adjusted, thereby improving the ability of the inlet block 100 to adjust the flow of different areas in the process chamber 300.
Referring to fig. 5 and 6, the air inlet seat 100 may further include a plurality of air distribution ducts 160, both ends of each air distribution duct 160 are respectively communicated with one of the air distribution chambers 110, a middle portion of each air distribution duct 160 is communicated with one of the air inlets 150, and the air distribution ducts 160 are symmetrically distributed about a central axis of the air inlet end of the air inlet insert 200. The scheme can improve the consistency of the sizes of the air flows in the air flow distribution cavities 110 at the two ends of the air flow distribution pipeline 160, further improve the consistency of the sizes of the air flows in the air flow distribution cavities 110 at the two ends of the air flow distribution pipeline 160, and realize the synchronous adjustment of the sizes of the air flows in the air flow distribution cavities 110 at the two ends of the air flow distribution pipeline 160.
Referring to fig. 5 and 6, two air flow distribution chambers 110 symmetrically distributed about the central axis of the air inlet insert 200 may communicate with the same air inlet 150 to achieve synchronous adjustment of the air flow in the two air flow distribution chambers 110 symmetrically distributed about the center of the air inlet insert 200 to ensure uniformity of air flow in the air inlet insert 200 about the portion of the central axis symmetry. Alternatively, the number of the air flow distribution chamber 110 may be 5, and the air flow distribution chamber 110 located in the middle may directly communicate with the air inlet 150. Two air flow distribution chambers 110 symmetrically distributed about the central axis of the air inlet insert 200 may communicate with the same air inlet 150. Further, two air distribution cavities 110 at the edge of the air inlet insert 200 may communicate with two air inlet channels 130 through two sets of air distribution holes 120, respectively.
In an alternative embodiment, the direction of the air flow distribution duct 160 communicating with the air flow distribution chamber 110 and the direction of the air flow distribution chamber 110 communicating with the air flow distribution holes 120 are perpendicular to each other. According to the scheme, the airflow distribution cavity 110 can be used for restricting the airflow flowing direction, so that the consistency of the airflows in the airflow distribution holes 120 connected with the same airflow distribution cavity 110 is improved, and the airflow entering the air inlet channel 130 is more uniform.
In an alternative embodiment, the diameter of the air distribution hole 120 corresponding to the middle region of the air distribution chamber 110 in each set of air distribution holes 120 is larger than the diameter of the air distribution chamber 110 corresponding to the edge region of the air distribution chamber 110. The aperture of the air distribution hole 120 corresponding to the middle region of the air distribution chamber 110 is larger than the aperture corresponding to the edge region of the air distribution chamber 110, so that the bernoulli pumping action of the air flow of the air distribution hole 120 located in the middle region of the air distribution chamber 110 to the air flow of the air distribution hole 120 located in the edge region of the air distribution chamber 110 can be reduced, and the uniformity of each air distribution hole 120 in each set of air distribution holes 120 can be improved.
Referring to fig. 1, 4 and 5, the inlet 100 may further be provided with a shielding gas passage 140. The shielding gas passage 140 is located at both sides of the inlet holder 100. The inlet insert 200 has a first gas path 210 and a second gas path 220, wherein the inlet end of the first gas path 210 may communicate with the plurality of sets of inlet channels 130, and the outlet end of the first gas path 210 communicates with the process chamber 300. The second air paths 220 are located at two sides of the air inlet insert 200, an air inlet end of the second air path 220 is communicated with the shielding gas channel 140, and an air outlet end of the second air path 220 is communicated with the process chamber 300. The first gas path 210 may be used to introduce a reaction gas into the process chamber 300, and the second gas path 220 may be used to introduce a shielding gas into the process chamber 300, so that the reaction gas and the sidewall of the process chamber 300 are isolated by the shielding gas, and the influence of particles in the chamber on the process is reduced.
The gas inlet end of the second gas path 220 communicates with the shielding gas passage 140 so that the shielding gas can enter the second gas path 220 of the gas inlet insert 200 through the shielding gas passage 140. The protective gas may be hydrogen, and no silicon atoms are decomposed, thereby reducing the probability of silicon film growth on the outer wall of the process chamber 300. Moreover, the hydrogen gas in the edge area of the process chamber 300 replaces the original silicon source gas, thereby reducing the consumption of the reaction gas and reducing the cost. Of course, the protective gas can also be other gases, such as: a mixed gas of hydrogen gas and hydrogen chloride gas. There are many types of the shielding gas, and the present invention is not limited to a specific type of the shielding gas.
Referring to FIG. 1, in an alternative embodiment, the inlet insert 200 may include a plurality of first air passages 210. The plurality of first air paths 210 are arranged in parallel, so that the plurality of first air paths 210 form a reaction gas inlet region, and the second air paths 220 may be located at both sides of the reaction gas inlet region. Optionally, the width of the reaction gas inlet area may be greater than 390mm to ensure that the effective coverage width of the reaction gas exceeds 300mm of the wafer, and ensure the uniformity of the film thickness. Moreover, the width of the reaction gas inlet area is larger than 390mm, so that the distance between the second gas path 220 and the edge of the wafer is larger than 45mm, and the dilution effect of the protective gas on the gas in the reaction area can be avoided.
Based on the gas inlet structure provided by the invention, the embodiment of the application also discloses semiconductor process equipment. The semiconductor processing apparatus comprising a gas inlet structure as described in any of the embodiments above. The semiconductor processing apparatus can be used to produce circular wafers. Optionally, the width of the reaction gas inlet region formed by the first gas path 210 in the gas inlet structure is larger than the diameter of the production circular wafer.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. A gas inlet arrangement for introducing gas into a process chamber (300) of a semiconductor processing apparatus, characterized in that the gas inlet arrangement comprises a gas inlet seat (100) and a gas inlet insert (200); wherein the content of the first and second substances,
the air inlet seat (100) comprises a plurality of air flow distribution cavities (110), a plurality of groups of air flow distribution holes (120) and a plurality of groups of air inlet channels (130), wherein the air inlet channels (130) are parallel to each other;
each air flow distribution cavity (110) corresponds to at least one set of air flow distribution holes (120) and is communicated with at least one set of air inlet channels (130) through the air flow distribution holes (120), and the air flow distribution holes (120) are integrally formed with the air flow distribution cavities (110) and/or the air inlet channels (130);
the air inlet end of the air inlet plug-in piece (200) is communicated with the air inlet channel (130), and the air outlet end of the air inlet plug-in piece (200) is communicated with the process chamber (300).
2. The intake structure according to claim 1, wherein an intake direction of the air flow distribution hole (120) is perpendicular to an intake direction of the intake passage (130).
3. The intake structure of claim 1 or 2, wherein the plurality of groups of intake channels (130) are uniformly distributed at the intake end of the intake insert (200), and the intake direction of the intake channels (130) is the same as the intake direction of the intake insert (200).
4. The intake structure of claim 3, wherein the plurality of air distribution cavities (110), the plurality of sets of intake channels (130), and the plurality of sets of air distribution holes (120) are all symmetrically distributed about a central axis of the intake end of the intake insert (200).
5. The air intake structure of claim 4, wherein the air intake seat (100) further comprises a plurality of air inlets (150), each air inlet (150) corresponding to at least one of the air flow distribution chambers (110).
6. The air intake structure of claim 5, wherein the air intake seat (100) further comprises a plurality of air distribution ducts (160), both ends of each air distribution duct (160) are respectively communicated with one of the air distribution cavities (110), the middle part of each air distribution duct (160) is communicated with one of the air inlets (150), and the air distribution ducts (160) are symmetrically distributed about the central axis of the air intake end of the air intake insert (200).
7. The air intake structure according to claim 6, wherein a direction of communication of the air flow distribution duct (160) with the air flow distribution chamber (110) and a direction of communication of the air flow distribution chamber (110) with the air flow distribution holes (120) are perpendicular to each other.
8. The air intake structure according to claim 1, wherein the air distribution holes (120) in each set of the air distribution holes (120) corresponding to the central region of the air distribution chamber (110) have a larger aperture than the air distribution chambers (110) corresponding to the peripheral regions of the air distribution chamber (110).
9. The air intake structure according to claim 1, wherein the air intake seat (100) further has a shielding air passage (140), the shielding air passage (140) being located at both sides of the air intake seat (100),
the air inlet plug-in unit (200) is provided with a first air path (210) and a second air path (220), the air inlet end of the first air path (210) is communicated with the multiple groups of air inlet channels (130), and the air outlet end of the first air path (210) is communicated with the process chamber (300); the second air path (220) is located on two sides of the air inlet plug-in unit (200), an air inlet end of the second air path (220) is communicated with the protective air channel (140), and an air outlet end of the second air path (220) is communicated with the process chamber (300).
10. A semiconductor processing apparatus, comprising the gas inlet structure of any one of claims 1 to 9.
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| CN202110511173.XA CN113249786B (en) | 2021-05-11 | 2021-05-11 | Gas inlet structure and semiconductor process equipment |
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| CN202110511173.XA CN113249786B (en) | 2021-05-11 | 2021-05-11 | Gas inlet structure and semiconductor process equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103540911A (en) * | 2013-10-28 | 2014-01-29 | 光达光电设备科技（嘉兴）有限公司 | Manufacturing method of spray header |
| CN104278254A (en) * | 2013-07-03 | 2015-01-14 | 诺发系统公司 | Multi-plenum, dual-temperature showerhead |
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| CN104278254A (en) * | 2013-07-03 | 2015-01-14 | 诺发系统公司 | Multi-plenum, dual-temperature showerhead |
| CN103540911A (en) * | 2013-10-28 | 2014-01-29 | 光达光电设备科技（嘉兴）有限公司 | Manufacturing method of spray header |
| CN105386122A (en) * | 2015-10-20 | 2016-03-09 | 中国电子科技集团公司第四十八研究所 | Inlet regulating assembly and gas flow distribution regulating apparatus of silicon epitaxy reaction chamber |
| WO2018090591A1 (en) * | 2016-11-21 | 2018-05-24 | 北京北方华创微电子装备有限公司 | Processing chamber and semiconductor device |
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