CN214327969U - Silicon carbide epitaxial growth equipment and air source conveying device thereof - Google Patents
Silicon carbide epitaxial growth equipment and air source conveying device thereof Download PDFInfo
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- CN214327969U CN214327969U CN202120381895.3U CN202120381895U CN214327969U CN 214327969 U CN214327969 U CN 214327969U CN 202120381895 U CN202120381895 U CN 202120381895U CN 214327969 U CN214327969 U CN 214327969U
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Abstract
The utility model provides a silicon carbide epitaxial growth device and an air source conveying device thereof, wherein the air source conveying device comprises a plurality of air source inlets; the inner part of the air source conveying channel is at least provided with a conical structure body, and the conical structure body divides the inner cavity of the air source conveying channel into a plurality of mutually independent channels; the air source mixing area is arranged at the outlet end of the air source conveying channel; the number of the air source inlets is consistent with the number of the channels in the air source conveying channel. The utility model discloses an air supply conveyor makes the growth source mix more evenly before getting into the reaction chamber, improves the thickness homogeneity of carborundum epitaxial layer and the homogeneity of doping concentration.
Description
Technical Field
The utility model relates to a semiconductor growth equipment technical field, concretely relates to carborundum epitaxial growth equipment and air supply conveyor thereof.
Background
Silicon carbide (SiC) material is a third generation wide bandgap semiconductor material following the first generation semiconductor material silicon (Si) and the second generation semiconductor (gallium arsenide GaAs). The silicon carbide crystal structure has the characteristic of homogeneous polytype, and the basic structure of the silicon carbide crystal structure is a Si-C tetrahedral structure and belongs to a close-packed structure. The silicon carbide has the superior performances of higher forbidden bandwidth, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift velocity and the like, and has wide application prospect in the fields of semiconductor illumination, power electronic devices, lasers, detectors and the like.
The preparation of the silicon carbide epitaxial layer is to grow the silicon carbide epitaxial layer on the silicon carbide single crystal substrate in a homogeneous epitaxial growth mode, and the doping of the silicon carbide epitaxial layer is difficult in the growth process, so that the manufacturing requirement of a device is difficult to achieve. At present, silicon carbide epitaxial materials are generally prepared by a Chemical Vapor Deposition (CVD) method, and depletion of growth gas in the diameter direction of an epitaxial layer in a growth process causes variation of the growth rate and doping concentration of local points on the epitaxial layer along with the mixing uniformity of a gas source, the flow rate of the gas source and the position, and causes non-uniformity of the epitaxial thickness and doping concentration of silicon carbide. In order to solve the above problems, in the prior art, adjustment is generally performed by adjusting the tray and the rotation speed, and although the non-uniform distribution of the gas source caused by linear depletion is reduced, the non-uniform distribution of the gas source in an exponential type and a quadratic function type cannot be reduced, and the problem that the doping concentration and the thickness of the silicon carbide epitaxial wafer are still non-uniform is still solved.
SUMMERY OF THE UTILITY MODEL
To not enough and defect among the prior art, the utility model provides a carborundum epitaxial growth equipment and air supply conveyor thereof for solve each part doping concentration of carborundum epitaxial wafer and the inhomogeneous problem of thickness.
In order to achieve the above objects and other related objects, the utility model provides an air supply conveyor of silicon carbide epitaxial growth equipment, air supply conveyor sets up one side of the reacting chamber of silicon carbide epitaxial growth equipment, air supply conveyor includes:
a plurality of gas source inlets;
the inner part of the air source conveying channel is at least provided with a conical structure body, and the conical structure body divides the inner cavity of the air source conveying channel into a plurality of mutually independent channels; and
the gas source mixing area is arranged at the outlet end of the gas source conveying channel;
the number of the air source inlets is consistent with the number of the channels in the air source conveying channel.
In an embodiment of the present invention, the tapered structure includes:
the first conical part is positioned at the inlet end of the air source conveying channel;
the second conical part is positioned at the outlet end of the air source conveying channel; and
an intermediate body located between the first and second tapered portions.
In an embodiment of the present invention, the air source conveying passage is provided therein with a first conical structure and a second conical structure arranged side by side with the first conical structure.
Further, the first conical structural body and the second conical structural body divide the inner cavity of the air source conveying channel into a first channel, a second channel and a third channel which are independent of each other.
Still further, the air supply delivery apparatus includes:
a first gas source inlet corresponding to an inlet of the first channel;
a second gas source inlet corresponding to an inlet of the second channel; and
a third gas source inlet corresponding to an inlet of the third channel.
In an embodiment of the present invention, the air input of the first air source inlet, the air input of the second air source inlet and the air input of the third air source inlet are controlled by the air mass flow controller respectively.
In an embodiment of the present invention, the first air source conveying channel, the second air source conveying channel and the third air source conveying channel are separated from each other, and the growth source gas is different from the air source inlet respectively corresponding to the air source conveying channel, through the passage outlet discharge entering the air source mixing area.
In an embodiment of the present invention, an isolation quartz plate is further disposed on the side walls of the two sides of the air supply conveying passage, the isolation quartz plate is obliquely installed on the side walls of the air supply conveying passage, and the isolation quartz plate on the side walls of the two sides of the air supply conveying passage and the pyramid part of the cone-shaped structure body constitute a horn-shaped structure.
A second aspect of the present invention is to provide a silicon carbide epitaxial growth apparatus, including reaction chamber, air supply conveyor and exhaust apparatus, air supply conveyor sets up one side of reaction chamber, exhaust apparatus sets up the opposite side of reaction chamber, wherein air supply conveyor includes:
a plurality of gas source inlets;
the inner part of the air source conveying channel is at least provided with a conical structure body, and the conical structure body divides the inner cavity of the air source conveying channel into a plurality of mutually independent channels; and
the gas source mixing area is arranged at the outlet end of the gas source conveying channel;
the number of the air source inlets is consistent with the number of the channels in the air source conveying channel.
In an embodiment of the present invention, the reaction chamber and the sidewall connected to the air source mixing region are provided with a plurality of air inlets communicated with the air source mixing region.
In an embodiment of the present invention, the air inlets are uniformly arranged along the width direction of the sidewall of the reaction chamber.
As above, the utility model discloses a silicon carbide epitaxial growth equipment and air supply conveyor thereof, wherein air supply conveyor includes a plurality of air supply entries, air supply transfer passage separates into a plurality of mutually independent passageways through the toper structure that inside set up, the growth source gas gets into established gas passage through the air supply entry of difference, get into the air supply mixed region through the passageway export, and because the special shape of toper structure, the channel outlet horn mouth, the air current gets into spacious space by narrow space, the air current is more steady, more be favorable to mixing on perpendicular horizontal air flow direction, increase the air supply mixed region, it is more even to mix before making the air supply get into the reacting chamber, the thickness homogeneity of improvement silicon carbide epitaxial layer each point and the homogeneity of doping concentration. The gas quantity entering the gas source conveying channel from each gas source inlet of the gas source conveying device can be accurately controlled by a gas Mass Flow Controller (MFC), so that the proportion of a carbon source and a silicon source and the quantity of a doping source can be adjusted, and the doping and the thickness of the silicon carbide epitaxial layer are more uniform. The utility model also provides a carborundum epitaxial growth equipment that contains above-mentioned air supply conveyor, be equipped with a plurality of inlet ports that are linked together with the air supply mixed region on the lateral wall that the reacting chamber links to each other with air supply conveyor, the growth source gas of misce bene gets into the reacting chamber by the inlet port and carries out epitaxial growth. The silicon carbide epitaxial growth equipment can effectively adjust the proportion of the growth source in the reaction chamber so as to adjust the doping concentration and thickness uniformity of the silicon carbide epitaxial layer and improve the qualification rate of the silicon carbide epitaxial wafer.
Drawings
The features and advantages of the invention will be more clearly understood by reference to the accompanying drawings, which are schematic and should not be understood as imposing any limitation on the invention, in which:
fig. 1 is a schematic structural diagram of an embodiment of the air supply conveying device of the present invention.
Fig. 2 is a schematic structural view of the cone-shaped structure of fig. 1.
Fig. 3 is a schematic structural diagram of an embodiment of an apparatus for epitaxial growth of silicon carbide according to the present invention.
Fig. 4 shows the position distribution diagram of the test points for the thickness test and the doping concentration test of the silicon carbide epitaxial wafer.
Fig. 5 shows the thickness uniformity of silicon carbide epitaxial wafers of different heats prepared by the silicon carbide epitaxial growth apparatus of the present invention.
Fig. 6 shows the uniformity of doping concentration for silicon carbide epitaxial wafers of different heats prepared using the silicon carbide epitaxial growth apparatus of the present invention.
Fig. 7 shows the thickness uniformity of silicon carbide epitaxial wafers for different heats prepared using a silicon carbide epitaxial growth apparatus of the prior art.
Fig. 8 shows the uniformity of doping concentration for different heats of silicon carbide epitaxial wafers prepared using a prior art silicon carbide epitaxial growth apparatus.
Reference numerals
1 gas source inlet
11 inlet of first gas source
12 second gas supply inlet
13 third gas supply inlet
2 gas source conveying channel
21 first conical Structure
22 second conical structure
211 first conical part
212 second cone part
213 middle part
23 first channel
24 second channel
25 third channel
3 gas source mixing zone
4 reaction chamber
41 air inlet
5 exhaust device
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied by other different embodiments, and meanwhile, the terms such as "upper", "lower", "left", "right", "middle" and "one" cited in the present specification are also only clear for convenience of description, and are not used to limit the implementable scope of the present invention, and the changes or adjustments of the relative relationship thereof are considered as the implementable scope of the present invention without substantial technical changes.
It should be noted that the drawings provided in the present embodiment are only schematic and illustrative of the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.
The utility model provides an air supply conveyor of silicon carbide epitaxial growth equipment can improve the doping concentration homogeneity and the silicon carbide epitaxial layer thickness homogeneity of silicon carbide epitaxial growth, can regulate and control the doping homogeneity and the thickness on silicon carbide epitaxial wafer growth layer simultaneously.
Referring to fig. 1, the utility model provides an air supply conveyor of silicon carbide epitaxial growth equipment, air supply conveyor sets up the one side at silicon carbide epitaxial growth equipment's reacting chamber, wherein, air supply conveyor includes air supply entry 1, air supply transfer passage 2 and air supply mixed region 3, air supply transfer passage 2's inside is equipped with a toper structure at least, the toper structure separates into a plurality of mutually independent passageways with air supply transfer passage 2's inner chamber, and the quantity of air supply entry is unanimous with the inside passageway quantity of air supply transfer passage, and the one-to-one sets up, air supply mixed region 3 sets up the exit end at air supply transfer passage 2. Different growth source gases enter specific channels from different gas source inlets 1 for transportation, are sprayed through the channel outlets and enter a gas source mixing area 3, and enter a reaction chamber for epitaxial growth after being uniformly mixed in the gas source mixing area. Because the tail end of the conical structure body 21 is a conical part, the outlet of each channel is a flared opening expanding outwards, and the gas is sprayed into a wide space through a narrow channel, so that the gas flow is more stable, and the mixing is more facilitated in the vertical horizontal gas flow direction.
Referring to fig. 2, in an embodiment, the tapered structure includes a first tapered portion 211, a second tapered portion 212 and an intermediate portion 213, the first tapered portion 211 is disposed at the inlet end of the gas supply channel 2, the second tapered portion 212 is disposed at the outlet end of the gas supply channel 2, and the intermediate portion 213 is disposed between the first tapered portion 211 and the second tapered portion 212 to connect the first tapered portion 211 and the second tapered portion 212. The conical structure 21 divides the inner cavity of the air source conveying channel 2 into a plurality of mutually independent channels, and the front end and the rear end of the conical structure are both conical bodies, so that the inlet and the outlet of each channel present a horn-shaped structure. The horn mouth that the air current passes through the front end can make whole air currents let in the set position, and preliminary mixing gets into specific passageway, and horn type export makes gaseous narrow space entering broad space from simultaneously, and the air current can be more steady, more is favorable to mixing on perpendicular horizontal air current direction. In this embodiment, two side walls of the gas source conveying channel 2 are further provided with isolating quartz plates, and the front ends and the tail ends of the isolating quartz plates are obliquely installed towards the side wall of the gas source conveying channel 2, so that the inlet and the outlet of the first channel 23 and the inlet and the outlet of the third channel 25 both have horn-shaped structures, which is beneficial to the mixing of the growth source gases.
Referring to fig. 1, in another embodiment, a first conical structure 21 and a second conical structure 22 are disposed in parallel inside the gas supply channel 2, and the inner cavity of the gas supply channel 2 is divided into three independent channels, namely a first channel 23, a second channel 24 and a third channel 25, by the first conical structure 21 and the second conical structure 22. Correspondingly, the air supply delivery device comprises a first air supply inlet 11, a second air supply inlet 12 and a third air supply inlet 13, wherein the first air supply inlet 11 corresponds to the inlet of the first channel 23, the second air supply inlet 12 corresponds to the inlet of the second channel 24, and the third air supply inlet 13 corresponds to the inlet of the third channel 25. Different growth source gases enter from different gas source inlets, enter a specific conveying channel, are discharged from a channel outlet and enter the gas source mixing area 3, and enter the reaction chamber after being uniformly mixed in the gas source mixing area 3. And the air input of each air supply entry is controlled by gas Mass Flow Controller (MFC), consequently, the utility model discloses an air supply conveyor can the accurate control carbon source and the proportion of silicon source, adjusts the growth thickness and the doping concentration of epitaxial layer through the proportion of adjusting carbon source and silicon source or the flow of doping source.
Referring to fig. 3, the utility model also provides a silicon carbide epitaxial growth equipment, including reacting chamber 4, air supply conveyor and exhaust apparatus 5, air supply conveyor sets up the opposite side at reacting chamber 4 in one side of reacting chamber 4, and exhaust apparatus 5 sets up at reacting chamber 4. Wherein air supply conveyor does the utility model discloses an air supply conveyor. The side wall of the reaction chamber 4 connected with the gas source conveying device is provided with a plurality of gas inlets 41 communicated with the gas source mixing area 3, for example, the gas inlets can be uniformly arranged along the width direction of the side wall, and the growth source gas is uniformly mixed in the gas source mixing area 3 and then enters the reaction chamber 4 through the gas inlets 41 to carry out epitaxial growth of the silicon carbide layer.
Referring to fig. 4 to 8, adopt the same growth technology to be respectively the utility model discloses a growing many heats of silicon carbide epitaxial wafer in silicon carbide epitaxial equipment and the silicon carbide epitaxial equipment among the prior art, a stove growth a slice silicon carbide epitaxial wafer every, then select a plurality of test points on every silicon carbide epitaxial wafer, wherein, the position of the test point of selecting on every silicon carbide epitaxial wafer is the same, then carry out thickness test and doping concentration test to every test point on every silicon carbide epitaxial wafer to according to homogeneity computational formula: STDEVA/AVERAGE (standard deviation/AVERAGE) calculates the thickness uniformity and doping concentration uniformity of each silicon carbide epitaxial wafer grown in the apparatus of the present invention and the apparatus of the prior art, respectively.
Referring to fig. 4, as an example, in the silicon carbide epitaxial apparatus of the present invention and the existing silicon carbide epitaxial apparatus, silicon carbide epitaxial wafers of 26 heats were grown respectively, 17 test points were uniformly selected on each silicon carbide epitaxial wafer, and test points of the same position were selected on all silicon carbide epitaxial wafers. For example, the positions of the test points include the center of the silicon carbide epitaxial wafer and 4 test points uniformly selected along 4 different radial directions of the silicon carbide epitaxial wafer, and each test point of 52 silicon carbide epitaxial wafers is subjected to thickness test and doping concentration test according to a uniformity calculation formula: STDEVA/AVERAGE (standard deviation/AVERAGE) was used to calculate the thickness uniformity and doping concentration uniformity of each silicon carbide epitaxial wafer. Utilize the homogeneity that the calculation obtained to draw respectively the utility model discloses a thickness homogeneity and the broken line graph of doping concentration homogeneity of epitaxial equipment growth carborundum epitaxial wafer and the thickness homogeneity and the doping concentration homogeneity of the carborundum epitaxial wafer of current equipment growth.
Fig. 5 shows that the utility model discloses a thickness uniformity of the carborundum epitaxial wafer of the different heats of equipment growth, and fig. 7 shows the thickness uniformity of the carborundum epitaxial wafer of the different heats of equipment growth for prior art, and wherein, the abscissa shows the carborundum epitaxial wafer of different heats growth, and the ordinate shows the thickness uniformity of the carborundum epitaxial wafer that different heats correspond. The maximum value of the thickness uniformity of the silicon carbide epitaxial wafer grown by the silicon carbide epitaxial equipment is 3.5 percent, the minimum value is 2.1 percent, and the thickness uniformity difference of each silicon carbide epitaxial wafer is small; and the homogeneity maximum value of the thickness of the silicon carbide epitaxial wafer that adopts the preparation of existing equipment is 6%, and the minimum value is 0.1%, and the thickness homogeneity of each silicon carbide epitaxial wafer is undulant great, and this demonstrates to use the utility model discloses a silicon carbide epitaxial equipment growth's silicon carbide epitaxial wafer's thickness homogeneity is better, and the quality is more stable.
Fig. 6 shows the doping concentration uniformity of the silicon carbide epitaxial wafer for different heats of the growth of the apparatus of the present invention, and fig. 8 shows the doping concentration uniformity of the silicon carbide epitaxial wafer for different heats of the growth of the existing apparatus, wherein the abscissa represents the silicon carbide epitaxial wafer for different heats of growth, and the ordinate represents the doping concentration uniformity of the silicon carbide epitaxial wafer for different heats of growth. The maximum value of the uniformity of the doping concentration of the silicon carbide epitaxial wafer grown by the silicon carbide epitaxial equipment is 8.2 percent, the minimum value of the uniformity of the doping concentration of the silicon carbide epitaxial wafer is 3.5 percent, and the difference of the uniformity of the doping concentration of each silicon carbide is small; and the homogeneity maximum value of the doping concentration of the silicon carbide epitaxial wafer prepared by adopting the existing equipment is 12.8 percent, the minimum value is 3.5 percent, and the uniformity fluctuation of the doping concentration of the silicon carbide is larger, which shows that the silicon carbide epitaxial wafer grown by the silicon carbide epitaxial equipment has better uniformity of the doping concentration and more stable quality.
To sum up, the utility model provides a carborundum epitaxial growth equipment and air supply conveyor thereof, air supply conveyor utilizes the entry and the export of keeping apart quartz plate with air supply transfer passage to design into the horn mouth form, and air supply transfer passage's entry sets up corresponding to the air supply entry, the source gas that grows gets into established gas passage through the passageway entry, get into the air supply mixed area through the passageway exit, the horn mouth is designed into to the channel exit, the air current gets into wide space by narrow space, the air current is more steady, more be favorable to mixing on perpendicular horizontal air current direction, increase the air supply mixed area, it is more even to make the air supply mix before getting into the reacting chamber, the thickness homogeneity of improvement carborundum epitaxial layer each point and the homogeneity of doping concentration. Therefore, the utility model discloses thereby effectively overcome some practical problems among the prior art and had very high use value and use meaning.
The above-described embodiments are merely illustrative of the principles of the present invention and its efficacy, rather than limiting the same, and various modifications and variations can be made by those skilled in the art without departing from the spirit and scope of the invention, such modifications and variations all falling within the scope of the appended claims.
Claims (10)
1. The utility model provides a silicon carbide epitaxial growth equipment's air supply conveyor, air supply conveyor sets up one side of silicon carbide epitaxial growth equipment's reacting chamber, its characterized in that, air supply conveyor includes:
a plurality of gas source inlets;
the inner part of the air source conveying channel is at least provided with a conical structure body, and the conical structure body divides the inner cavity of the air source conveying channel into a plurality of mutually independent channels; and
the gas source mixing area is arranged at the outlet end of the gas source conveying channel;
the number of the air source inlets is consistent with the number of the channels in the air source conveying channel.
2. The air supply delivery arrangement of claim 1, wherein the cone-shaped structure comprises:
the first conical part is positioned at the inlet end of the air source conveying channel;
the second conical part is positioned at the outlet end of the air source conveying channel; and
an intermediate portion located between the first and second tapered portions.
3. An air supply delivery arrangement according to claim 1 or claim 2, wherein the air supply delivery channel is internally provided with a first conical structure and a second conical structure arranged alongside the first conical structure.
4. The air supply delivery arrangement of claim 3, wherein the first and second tapered structures divide the interior cavity of the air supply delivery passageway into first, second and third passageways that are independent of one another.
5. The air supply delivery arrangement of claim 4, comprising:
a first gas source inlet corresponding to an inlet of the first channel;
a second gas source inlet corresponding to an inlet of the second channel; and
a third gas source inlet corresponding to an inlet of the third channel.
6. The gas source delivery device of claim 5, wherein the air input of the first gas source inlet, the air input of the second gas source inlet and the air input of the third gas source inlet are controlled by gas mass flow controllers respectively.
7. The gas source conveying device according to claim 3, wherein two side walls of the gas source conveying channel are further provided with isolating quartz plates, and the isolating quartz plates are obliquely arranged with the side walls of the gas source conveying channel.
8. An apparatus for epitaxial growth of silicon carbide, comprising:
a reaction chamber;
the gas source conveying device is arranged on one side of the reaction chamber; and
the exhaust device is arranged on the other side of the reaction chamber;
wherein the gas source delivery device comprises:
a plurality of gas source inlets;
the inner part of the air source conveying channel is at least provided with a conical structure body, and the conical structure body divides the inner cavity of the air source conveying channel into a plurality of mutually independent channels; and
the gas source mixing area is arranged at the outlet end of the gas source conveying channel;
the number of the air source inlets is consistent with the number of the channels in the air source conveying channel.
9. The apparatus of claim 8, wherein a plurality of gas inlets are formed on the sidewall of the reaction chamber connected to the gas source mixing region and are communicated with the gas source mixing region.
10. The silicon carbide epitaxial growth apparatus according to claim 9, wherein the gas inlets are uniformly arranged in a width direction of the side wall of the reaction chamber.
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| CN202120381895.3U CN214327969U (en) | 2021-02-20 | 2021-02-20 | Silicon carbide epitaxial growth equipment and air source conveying device thereof |
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| CN202120381895.3U CN214327969U (en) | 2021-02-20 | 2021-02-20 | Silicon carbide epitaxial growth equipment and air source conveying device thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115961346A (en) * | 2022-12-29 | 2023-04-14 | 深圳市重投天科半导体有限公司 | Large-size silicon carbide epitaxial gas supply device and method |
| CN117587507A (en) * | 2024-01-19 | 2024-02-23 | 宁波合盛新材料有限公司 | Method and device for improving doping uniformity of silicon carbide epitaxial wafer |
-
2021
- 2021-02-20 CN CN202120381895.3U patent/CN214327969U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115961346A (en) * | 2022-12-29 | 2023-04-14 | 深圳市重投天科半导体有限公司 | Large-size silicon carbide epitaxial gas supply device and method |
| CN117587507A (en) * | 2024-01-19 | 2024-02-23 | 宁波合盛新材料有限公司 | Method and device for improving doping uniformity of silicon carbide epitaxial wafer |
| CN117587507B (en) * | 2024-01-19 | 2024-04-05 | 宁波合盛新材料有限公司 | Method and device for improving doping uniformity of silicon carbide epitaxial wafer |
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Address after: 315336 buildings 15 and 16, No. 68, Yuhai East Road, Hangzhou Bay New Area, Ningbo, Zhejiang Patentee after: CLC Semiconductor Co.,Ltd. Address before: Room 105-1, building 3, 290 Xingci 1st Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province, 315336 Patentee before: CLC Semiconductor Co.,Ltd. |
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