JP2002280378A - Batch-type remote plasma treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a batch-type remote plasma treatment apparatus. SOLUTION: A pair of electrodes 27, 27, to which a high-frequency power supply 31 is connected, are arranged to be adjacent in a treatment chamber 12 into which a boat 2 holding a plurality of wafers 1 is carried, and both electrodes are covered with a protective tube 25 made of a dielectric. A gas supply pipe 21, made of a dielectric, is arranged between both electrodes in the treatment chamber 12, and a plurality of blow-off ports 23 are opened and installed in the pipe 21. The treatment chamber 12 is heated by a heater 14, is evacuated by an evacuation pipe 16, and the boat 2 is turned by a shaft 19. When high-frequency power is applied across both electrodes, a plasma 40 is formed inside the pipe 21, a treatment gas 41 in the pipe 21 is activated, activated particles 42 are blown off from the blow-off ports 23, and they come into contact with the wafers 1 so as to be plasma-treated. Consequently, the throughput of batch treatment can be enhanced, the plasma damages to the remote plasma treatment apparatus can be prevented, the treatment chamber is heated as a whole, and temperature distribution can be made uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a batch type remote plasma processing apparatus. For example, in a method of manufacturing a semiconductor device, an insulating film is formed on a semiconductor wafer (hereinafter, referred to as a wafer) in which a semiconductor integrated circuit including a semiconductor element is formed. And those effective for depositing metal films.

[0002]

2. Description of the Related Art DRA which is an example of a semiconductor integrated circuit device
Use of tantalum pentoxide (Ta ₂ O ₅ ) has been studied to form a capacitance portion (insulating film) of a capacitor (Capacitor) of M (Dynamic Random Access Memorry). Since Ta ₂ O ₅ has a high dielectric constant, it is suitable for obtaining a large capacitance in a small area. From the viewpoints of productivity, film quality, etc., in the DRAM manufacturing method, T
It is desired that a ₂ O ₅ is formed by a MOCVD apparatus.

On the other hand, when a Ta ₂ O ₅ film is formed by an MOCVD apparatus, it is known that carbon (C) causing a leak current adheres to the vicinity of the surface of the Ta ₂ O ₅ film. Therefore, after the Ta ₂ O ₅ film is formed on the wafer, it is necessary to remove carbon existing near the surface of the Ta ₂ O ₅ film. And single wafer type remote plasma C
Since the VD apparatus can reduce the heating temperature of the wafer to 300 to 400 ° C. while preventing the plasma damage to the wafer, it has been studied to remove the carbon of the Ta ₂ O ₅ film by a single-wafer type remote plasma CVD apparatus. ing.

[0004]

However, the single-wafer type remote plasma CVD apparatus has a problem that the throughput is reduced because the Ta ₂ O ₅ film is removed one by one. For example, if the net processing time in the single-wafer remote plasma CVD apparatus is 10 minutes and the operation time of the transfer system is 2 minutes, the number of processed wafers per hour is only five.

[0005] Since a single-wafer remote plasma CVD apparatus is generally of a cold wall type in which only a susceptor is heated to a processing temperature, a single-wafer remote plasma CVD apparatus is used.
The VD apparatus has a problem that it is difficult to uniformly heat the wafer surface, and it is difficult to heat the wafer to 400 ° C. or more due to the selection of chamber materials. Further, when the heater is embedded in the susceptor to heat the wafer, the heat transfer to the wafer becomes uneven due to the warpage or the plane roughness of the wafer. is there. For this reason, it is conceivable to use a heater with an electrostatic chuck, but the heater with an electrostatic chuck is extremely expensive, and there is a problem in terms of cost effectiveness with respect to reliability.

An object of the present invention is to provide a batch type remote plasma processing apparatus capable of obtaining a large throughput and improving the uniformity of the temperature of a substrate to be processed.

[0007]

According to a first aspect of the present invention, there is provided a process tube comprising a processing chamber into which a plurality of substrates to be processed are loaded. At a position distant from the carry-in area, a pair of electrodes that are close to each other are arranged, and a power supply that applies high-frequency power is connected between the pair of electrodes, and a space between the pair of electrodes is provided. Is characterized in that the processing gas is supplied. A second means for solving the problem is that a pair of electrodes are arranged facing each other inside and outside the processing chamber in a process tube having a processing chamber into which a plurality of substrates to be processed are loaded. A power supply for applying high-frequency power is connected between the pair of electrodes, and a processing gas is supplied to a space between the two electrodes in the processing chamber. A third means for solving the problem is that a pair of electrodes close to each other are arranged in the processing chamber of a process tube having a processing chamber into which a plurality of substrates to be processed are loaded, A power supply for applying high-frequency power is connected between the two electrodes, and a discharge chamber is formed in the processing chamber, including between the two electrodes, and independent of the processing chamber. A gas outlet for supplying to the chamber is provided.

In each of the above means, when high-frequency power is applied between both electrodes, plasma is generated between both electrodes. When a processing gas is supplied into the plasma atmosphere, neutral active particles are formed, and the active particles are supplied to a plurality of substrates to be processed carried into the process tube, thereby forming a plurality of substrates. The substrate to be processed is collectively subjected to plasma processing. According to the above-described means, a plurality of substrates to be processed are batch-processed collectively, so that the throughput is significantly improved as compared with a case where the substrates to be processed are processed one by one (single-wafer processing). Can be done. In addition, by heating a plurality of substrates to be processed housed in the process tube with a hot wall type heater, it is possible to uniformly heat the surface of each of the substrates to be processed. Processing can be made uniform.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.

In this embodiment, as shown in FIGS. 1 to 3, a batch type remote plasma processing apparatus according to the present invention is a batch type vertical hot wall type remote plasma CVD apparatus (hereinafter referred to as a CVD apparatus). .). That is, the CVD apparatus 10 includes a process tube 11 made of a material having high heat resistance such as quartz glass and formed in a cylindrical shape with one end opened and the other end closed, and the center line of the process tube 11 becomes vertical. So that it is arranged vertically and fixedly supported. The cylindrical hollow portion of the process tube 11 forms a processing chamber 12 for accommodating a plurality of wafers 1, and the lower end opening of the process tube 11 forms a furnace port 13 for taking in and out the wafer 1 as an object to be processed. are doing. The inner diameter of the process tube 11 is set to be larger than the maximum outer diameter of the wafer 1 to be handled.

The processing chamber 1 is located outside the process tube 11.
2 for uniformly heating the whole 2
However, the heater 14 is installed concentrically so as to surround the periphery of the process tube 11, and the heater 14 is vertically installed by being supported by a machine frame (not shown) of the CVD apparatus 10.

A manifold 15 is in contact with a lower end surface of the process tube 11, and the manifold 15 is formed of metal and is formed in a cylindrical shape having radially outwardly projecting flanges at upper and lower ends. The manifold 15 is detachably attached to the process tube 11 for maintenance and inspection work and cleaning work on the process tube 11. And the manifold 15 is CVD
By being supported by the machine frame (not shown) of the device 10,
The process tube 11 is in a vertically installed state.

One end of an exhaust pipe 16 is connected to a part of the side wall of the manifold 15, and the other end of the exhaust pipe 16 is connected to an exhaust device (not shown) so that the processing chamber 12 can be exhausted. It is configured. A seal cap 17 for closing the lower end opening is brought into contact with the lower end surface of the manifold 15 from below in the vertical direction with a seal ring 18 interposed therebetween. The seal cap 17 is formed in a disk shape substantially equal to the outer diameter of the manifold 15, and is configured to be vertically moved up and down by an elevator (not shown) installed vertically outside the process tube 11. . A rotating shaft 19 is inserted through the center line of the seal cap 17, and the rotating shaft 19 moves up and down together with the seal cap 17, and is rotated by a rotation driving device (not shown). At the upper end of the rotating shaft 19, a boat 2 for holding the wafer 1 as an object to be processed is vertically supported.

The boat 2 includes a pair of upper and lower end plates 3 and 4 and a plurality of (three in this embodiment) holding members 5 which are provided between the end plates 3 and 4 and vertically disposed. A plurality of holding grooves 6 are arranged in each holding member 5 at equal intervals in the longitudinal direction, and are submerged so as to face each other and open. Then, the outer peripheral edge of the wafer 1 is inserted between the plurality of holding grooves 6 of each holding member 5 so that the plurality of wafers 1 are held in the boat 2 horizontally and centered and aligned. It is supposed to be. A heat insulating cap 7 is formed on the lower surface of the lower end plate 4 of the boat 2, and the lower end surface of the heat insulating cap 7 is supported by the rotating shaft 19.

A gas supply pipe 2 for supplying a processing gas is provided at a position different from the exhaust pipe 16 in the vicinity of the inner peripheral surface of the process tube 11 (a position opposite to 180 degrees in the illustrated example).
1, the gas supply pipe 21 is formed in an elongated circular pipe shape using a dielectric material.
The gas inlet 22 at the lower end of the gas supply pipe 21 is bent at right angles to an elbow shape, and penetrates the side wall of the manifold 15 radially outward and protrudes to the outside. A plurality of outlets 23 are opened in the gas supply pipe 21 in a vertical direction, and the number of the outlets 23 corresponds to the number of wafers 1 to be processed. In the present embodiment, the number of the air outlets 23 matches the number of wafers 1 to be processed, and the height position of each air outlet 23 is between the upper and lower adjacent wafers 1 held by the boat. Each is set to face the space between them.

The gas supply pipe 21 in the manifold 15
A pair of support cylinders 24, 24 are provided on both sides in the circumferential direction of the gas introduction port 22. The pair of support cylinders 24, 24 project radially outward. Holder part 2
6 and 26 are inserted in the radial direction and supported respectively. Each protective tube 25 is formed of a dielectric material and is formed in an elongated circular pipe shape whose upper end is closed, and the upper and lower ends of the protective tube 25 are vertically aligned with the gas supply tube 21. The holder 26 at the lower end of each protection tube 25 is bent at right angles to an elbow shape, and the support tube 2 of the manifold 15 is formed.
4 penetrates radially outward and protrudes to the outside,
The inside of the hollow portion of each protection tube 25 is outside the processing chamber 12 (atmospheric pressure).
Is communicated to.

A pair of electrodes 2 formed of an elongated rod using a conductive material is formed in the hollow portions of the protection tubes 25.
7 and 27 are laid concentrically, and each electrode 2
The held portion 28, which is the lower end of 7, is held by the holder portion 26 via an insulating tube 29 and a shield tube 30 for preventing discharge. A high frequency power supply 31 for applying high frequency power is electrically connected between the two electrodes 27 via a matching unit 32.

Next, a method for removing carbon existing near the surface of the Ta ₂ O ₅ film for the capacitance portion of the capacitor of the DRAM using the CVD apparatus 10 having the above configuration will be described. That is, in the present embodiment,
A Ta ₂ O ₅ film (not shown) for forming a capacitance portion of a capacitor is formed on the wafer 1 supplied to the CVD apparatus 10.
Have been deposited in the previous MOCVD step and Ta ₂
It is assumed that carbon (not shown) exists near the surface of the O ₅ film, and the carbon is removed by the CVD apparatus 10.

A plurality of wafers 1 as substrates to be processed in the CVD apparatus 10 are transferred to the boat 2 by a wafer transfer device (not shown).
Is charged. 2 and 3
As shown in the figure, the boat 2 loaded with a plurality of wafers 1 is lifted by the elevator together with the seal cap 17 and the rotating shaft 19, and the process tube 11
(Boat loading).

A boat 2 holding a group of wafers 1
When the processing chamber 12 is carried into the processing chamber 12, the processing chamber 12 is evacuated to a predetermined pressure or lower by an exhaust device connected to an exhaust pipe 16, and the power supplied to the heater 14 is increased.
Is raised to a predetermined temperature. Since the heater 14 has a hot wall type structure, the temperature of the processing chamber 12 is maintained uniformly over the whole, and as a result, the temperature distribution of the group of wafers 1 held on the boat 2 becomes uniform over the entire length. At the same time, the in-plane temperature distribution of each wafer 1 becomes uniform and the same.

After the temperature of the processing chamber 12 reaches a preset value and stabilizes, oxygen (O ₂ ) gas is introduced as the processing gas 41, and when the pressure reaches the preset value, the boat 2 rotates. While being rotated by the shaft 19, high-frequency power is applied between the pair of electrodes 27 by the high-frequency power supply 31 and the matching device 32. An oxygen gas, which is a processing gas 41, is supplied to the gas supply pipe 21, and both electrodes 27, 27
When high-frequency power is applied during that time, as shown in FIG. 2, a plasma 40 is formed inside the gas supply pipe 21, and the reaction of the processing gas 41 becomes active.

As shown by dashed arrows in FIGS. 1 and 2, activated particles (oxygen radicals) 42 of the processing gas 41 are supplied from each outlet 23 of the gas supply pipe 21 to the processing chamber 1.
Spout into 2 each.

The activated particles (hereinafter, referred to as active particles) 42 are blown out from the respective outlets 23 so that they flow between the opposed wafers 1 and 1 and come into contact with the respective wafers 1. Is uniform over the entire length of the boat 2, and the radial contact distribution in the wafer surface of each wafer 1 corresponding to the flow direction of the active particles is also uniform. At this time, since the wafer 1 is rotated by the rotation of the boat 2, the contact distribution of the active particles 42 flowing between the wafers 1 and 1 on the wafer surface becomes uniform even in the circumferential direction.

The active particles (oxygen radicals) 42 in contact with the wafer 1 thermally react with carbon existing near the surface of the Ta ₂ O ₅ film of the wafer 1 to generate CO (carbon monoxide), thereby converting carbon. It is removed from the Ta ₂ O ₅ film. At this time, as described above, the temperature distribution of the wafer 1 is
And the uniform distribution of the active particles 42 with the wafer 1 is uniform at all positions of the boat 2 and within the wafer surface, so that the active particles 42 are thermally reacted by the wafer. The action of removing carbon at 1 is uniform at all positions of the boat 2 and in the wafer plane.

By the way, the processing conditions for removing the carbon of the Ta ₂ O ₅ film for forming the capacitance part of the DRAM capacitor are as follows. The supply flow rate of the oxygen gas used as the processing gas is 8.45 × 10 ⁻¹ to
3.38 Pa · m ³ / s, processing chamber pressure is 10 to 100
Pa, temperature is 500 to 700 ° C.

After a predetermined processing time has elapsed, the supply of the processing gas 41, the rotation of the rotating shaft 19, the application of high frequency power, the heating of the heater 14 and the exhaust of the exhaust pipe 16 are stopped. Is lowered to open the furnace port 13, and a group of wafers 1 is carried out of the furnace port 13 to the outside of the processing chamber 12 (boat unloading) while being held by the boat 2.

The group of wafers 1 carried out of the processing chamber 12 is discharged (unloaded) from the boat 2 by the wafer transfer device. Thereafter, by repeating the above-described operation, a plurality of wafers 1 are batch-processed collectively.

According to the above embodiment, the following effects can be obtained.

1) By batch processing a plurality of wafers at once, throughput can be greatly improved as compared with a case where wafers are processed one by one. For example, the number of sheets processed per hour in the case of single-wafer processing is five sheets when the processing time is 10 minutes and the operation time of the transport system is 2 minutes. On the other hand, when batch processing of 100 wafers is performed, the number of processed wafers per hour is 6 assuming that the processing time is 30 minutes and the operation time of the transfer system is 60 minutes.
6.7 sheets.

2) The plurality of wafers held by the boat and carried into the processing chamber are heated by a hot wall type heater, so that the entire length of the boat and the temperature within each wafer surface can be evenly distributed. Therefore, the processing state of the wafer by the active particles obtained by activating the processing gas by the plasma, that is, the distribution of removal of carbon from the Ta ₂ O ₅ film can be made uniform.

3) By laying a pair of elongated electrodes in the processing chamber so as to face each other, plasma can be formed over the entire length of both electrodes. The wafers can be supplied more uniformly over the entire length of the wafer group held at the same time.

4) By laying the gas supply pipe through which the processing gas is supplied in the space between the pair of elongated electrodes, the processing gas can be activated by the plasma inside the gas supply pipe. It is possible to prevent the wafer from reaching the wafer, and to prevent a decrease in the yield of the wafer due to plasma damage.

5) Opening the gas supply pipe with an outlet facing the space between the upper and lower wafers held by the boat allows the active particles to flow between the wafers. The contact distribution with respect to the entire wafer group can be made uniform over the entire length of the boat, and as a result, the processing state by the active particles can be made more uniform.

6) By rotating the boat holding a plurality of wafers, the contact distribution of the active particles flowing between the wafers on the wafer surface can be made uniform in the circumferential direction. Can be made more uniform.

7) It is possible to reduce the leakage current between the capacitor electrodes by removing the carbon of the Ta ₂ O ₅ film used for the capacitance portion of the DRAM capacitor, thereby improving the performance of the DRAM. Can be.

FIGS. 4 and 5 show a CVD apparatus according to a second embodiment of the present invention.

This embodiment is different from the above-described embodiment in that a pair of electrodes 27A and 27B
Is that the gas supply pipe 21A is disposed at a position other than the space between the electrodes 27A and 27B.

In the present embodiment, the inner electrode 27
A between the A and the outer electrode 27B, a high-frequency power is applied by the high-frequency power supply 31 and the matching unit 32, and the processing gas 41 is applied.
Is supplied to the processing chamber 12 by the gas supply pipe 21A, a plasma 40 is formed between the side wall of the process tube 11 and the inner electrode 27A, and the processing gas 41 is activated. The activated particles 42 diffuse into the entire processing chamber 12 and come into contact with each wafer 1 held by the boat 2. The active particles 42 in contact with the wafer 1 remove the carbon interposed in the Ta ₂ O ₅ film of the wafer 1 by a thermal reaction.

FIGS. 6 to 8 show a CVD apparatus according to a third embodiment of the present invention.

In the present embodiment, a pair of protection tubes 25, 25 provided vertically along the inner wall surface of the process tube 11, are bent downward,
The pair of electrodes 27, 27 are inserted into the protection tubes 25, 25 from below the side surfaces of the process tube 11. A gutter-shaped partition wall 34 forming a plasma chamber 33 is provided on the inner periphery of the process tube 11 so as to hermetically surround the protection tubes 25, 25, and the partition wall 34 has a plurality of outlets 35. The wafers are arranged and opened so as to face between the upper and lower wafers 1 and 1.
Further, a gas supply pipe 21 is provided at a position on the lower side of the process tube 11 where gas can be supplied to the plasma chamber 33.

After the processing gas 41 is supplied to the plasma chamber 33 and maintained at a predetermined pressure, high-frequency power is applied to both electrodes 27 and 2.
7, a plasma 40 is formed in the plasma chamber 33 when applied by the high frequency power supply 31 and the matching unit 32,
The processing gas 41 is activated. The activated electrically neutral particles 42 are supplied to the outlet 35 formed in the partition 34.
And is supplied to the processing chamber 12 to come into contact with each wafer 1 held by the boat 2. The active particles 42 in contact with the wafer 1 treat the surface of the wafer 1.

FIGS. 9 to 11 show a CVD apparatus according to a fourth embodiment of the present invention.

The CVD apparatus according to the present embodiment includes a pair of electrodes 27C, 27C formed in an elongated plate shape having a shorter length than the process tube 11. Both electrodes 27C, 27C are A pair of electrode insertion openings 36, 36 opened in a part of the side wall so as to extend in the vertical direction in parallel with each other and with the upper and lower ends aligned.
Are inserted from outside of the process tube 11 respectively. A pair of protective tubes 25C, 25C are provided on the inner peripheral surface of the process tube 11 so as to face the pair of electrode insertion ports 36, 36, respectively.
The insertion end of C is inserted into and surrounded by a pair of protection tubes 25C, 25C. The opening width of both electrode insertion holes 36, 36 and both protection tubes 25C, 25C are both electrodes 27C,
The thickness is set slightly wider than the plate thickness of 27C, and both electrodes 27C, 27C are exposed to atmospheric pressure.
Connecting portions 28C, 28 are provided at the lower ends of both electrodes 27C, 27C.
C are projected outward, respectively, and the connection portions 28C,
A high frequency power supply 31 for applying high frequency power is electrically connected to 28C via a matching unit 32. Both protection tubes 2
Between the protective tubes 25C and 25C, a plate-shaped partition wall 34C forming a plasma chamber 33C in cooperation with the protection tubes 25C and 25C is provided. It is arranged and opened so as to face one space. The processing gas 41 is supplied from the gas supply pipe 21 to the plasma chamber 33C.

After the processing gas 41 is supplied to the plasma chamber 33C by the gas supply pipe 21 and maintained at a predetermined pressure, a high-frequency power is applied between the two electrodes 27C and 27C.
1 and the matcher 32, the plasma 4
0 is formed in the plasma chamber 33C, and the processing gas 41 is activated. Then, the activated particles 42 are separated from the partition walls 34.
By being blown out from the blow-out port 35 </ b> C and supplied to the processing chamber 12, the blow-out port 35 </ b> C comes into contact with each wafer 1 held by the boat 2. The active particles 42 in contact with the wafer 1 treat the surface of the wafer 1.

FIGS. 12 to 14 show a CVD apparatus according to a fifth embodiment of the present invention.

The CVD apparatus according to the present embodiment includes a discharge tube 38 for forming a plasma chamber 37,
Reference numeral 8 denotes a substantially square prism having a length shorter than that of the process tube 11 using a dielectric material, and is laid so as to extend in a vertical direction on a part of the outer periphery of the side wall of the process tube 11. . On the side wall of the process tube 11 surrounded by the discharge tube 38, a plurality of air outlets 39 are arranged and opened so as to face between the upper and lower wafers 1, 1.
The processing gas 41 is supplied to the plasma chamber 37 of the discharge tube 38 from the gas supply tube 21. Discharge tube 38
On both sides in the circumferential direction, a pair of electrodes 27D, 27D formed in an elongated flat plate shape shorter than the discharge tube 38 are laid in a state exposed to the atmospheric pressure.
A high-frequency power supply 31 for applying high-frequency power is connected to each of the connection portions 28D and 28D formed on the 7D.
Are electrically connected via

After the processing gas 41 is supplied to the plasma chamber 37 by the gas supply pipe 21 and maintained at a predetermined pressure, when a high-frequency power is applied between the two electrodes 27D and 27D by the high-frequency power supply 31 and the matching device 32, A plasma 40 is formed in the plasma chamber 37, and the processing gas 41 is activated. Then, the activated particles 42 are blown out from an outlet 39 communicating with the discharge tube 38 and supplied to the processing chamber 12, so that the activated particles 42 come into contact with the respective wafers 1 held on the boat 2. The active particles 42 in contact with the wafer 1 treat the surface of the wafer 1.

The present invention is not limited to the above-described embodiment, and it goes without saying that various changes can be made without departing from the scope of the invention.

For example, the number of outlets of the gas supply pipe is not limited to be equal to the number of wafers to be processed, but can be increased or decreased according to the number of wafers to be processed. For example,
The air outlets are not limited to being arranged between the vertically adjacent wafers, but may be arranged every two or three wafers.

In the above embodiment, the case where the carbon interposed in the Ta ₂ O ₅ film of the capacitance portion of the capacitor is removed, but the batch type remote plasma processing apparatus according to the present invention is applicable to other film types. When removing foreign matter (molecules or atoms other than the film type) interposed in the wafer,
The present invention can be applied to a case where a VD film is formed, a case where diffusion is performed, a case where heat treatment is performed, and the like.

For example, an oxide film for a gate electrode of a DRAM
In the nitriding process, nitrogen (N_Two ) Mo
Or ammonia (NH_Three ) Or nitric oxide (N_Two 
O) and heating the processing chamber to between room temperature and 750 ° C.
As a result, the surface of the oxide film could be nitrided. Also,
Before the silicon germanium (SiGe) film is formed
Hydrogen (H)_Two ) For active particles of gas
Therefore, after the plasma treatment, the natural oxide film is removed.
And a desired SiGe film can be formed.
Was. In the formation of a nitrogen film at a low temperature, DCS
Chlorosilane) and NH_Three (Ammonia)
To form Si (silicon) and N (nitrogen) one by one
ALD (Atomic Layer Deposition)
If _Three During supply of NH_Three Activated by plasma
As a result, a high quality nitride film was obtained.

In the above embodiment, the case where the processing is performed on the wafer has been described. However, the processing target may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, and the like.

[0053]

As described above, according to the present invention,
It is possible to provide a batch type remote plasma processing apparatus capable of obtaining a large throughput and improving the temperature uniformity of a substrate to be processed.

[Brief description of the drawings]

FIG. 1 is a plan sectional view showing a CVD apparatus according to a first embodiment of the present invention.

FIG. 2 is a longitudinal sectional view taken along the line II-II in FIG.

FIG. 3 is a longitudinal sectional view taken along the line III-III of FIG. 1;

FIG. 4 is a plan sectional view showing a CVD apparatus according to a second embodiment of the present invention.

FIG. 5 is a longitudinal sectional view taken along line VV in FIG. 4;

FIG. 6 is a plan sectional view showing a CVD apparatus according to a third embodiment of the present invention.

FIG. 7 is a longitudinal sectional view taken along the line VII-VII of FIG. 6;

8 is a vertical sectional view taken along line VIII-VIII in FIG.

FIG. 9 is a plan sectional view showing a CVD apparatus according to a fourth embodiment of the present invention.

FIG. 10 is a longitudinal sectional view taken along line XX of FIG. 9;

FIG. 11 is a longitudinal sectional view taken along line XI-XI in FIG. 9;

FIG. 12 is a plan sectional view showing a CVD apparatus according to a fifth embodiment of the present invention.

13 is a longitudinal sectional view taken along the line XIII-XIII in FIG.

14 is a longitudinal sectional view taken along line XIV-XIV in FIG.

[Explanation of symbols]

Reference Signs List 1 wafer (substrate to be processed), 2 boat, 3, 4 end plate, 5 holding member, 6 holding groove, 7 heat insulating cap,
10: CVD apparatus (batch type remote plasma processing apparatus), 11: process tube, 12: processing chamber, 13:
Furnace opening, 14 heater, 15 manifold, 16 exhaust pipe, 17 seal cap, 18 seal ring, 19
... Rotating shaft, 21 ... Gas supply pipe, 22 ... Gas inlet, 2
3 ... Blow-out port, 24 ... Support cylinder part, 25 ... Protection tube, 26 ... Holder part, 27 ... Electrode, 28 ... Holded part, 29 ... Insulation cylinder,
30 ... shield cylinder, 31 ... high frequency power supply, 32 ... matching device,
40 plasma, 41 processing gas, 42 active particles, 2
1A: gas supply pipe, 27A: inner electrode, 27B: outer electrode, 33: plasma chamber, 34: partition wall, 35: outlet, 25C: protection tube, 27C: electrode, 28C: connection part,
33C: plasma chamber, 34C: partition, 35C: outlet
36 ... electrode insertion port, 27D ... electrode, 28D ... connection part, 3
7: plasma chamber, 38: discharge tube, 39: outlet.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Motonari Takebayashi 3-14-20 Higashinakano, Nakano-ku, Tokyo Stock Company Hitachi Kokusai Electric Co., Ltd. Hitachi Kokusai Electric Inc. (72) Inventor Nobuo Ishimaru 3-14-20 Higashinakano, Nakano-ku, Tokyo F-term (reference) 4K030 CA04 CA12 EA06 FA03 KA04 KA05 KA16 KA30 LA15 5F004 AA14 BA01 BB13 BB16 BB19 BB28 DA00 DA25 DA26 FA08 5F045 BB16 DP19 DP28 EB13 EE13 EF03 EH04 EH12 EH18 EK06 EM07

Claims (3)

[Claims] 1. A process tube having a processing chamber into which a plurality of substrates to be processed is loaded, a pair of electrodes adjacent to each other at a position in the processing chamber away from a loading area of the plurality of substrates to be loaded. And a power source for applying high-frequency power is connected between the pair of electrodes, and a processing gas is supplied to a space between the pair of electrodes. Batch type remote plasma processing apparatus. 2. A process tube provided with a processing chamber into which a plurality of substrates to be processed is loaded, a pair of electrodes are disposed inside and outside the processing chamber so as to face each other, and between the pair of electrodes. A batch type remote plasma processing apparatus, wherein a power supply for applying high frequency power is connected, and a processing gas is supplied to a space between the two electrodes in the processing chamber. 3. A process tube provided with a processing chamber into which a plurality of substrates to be processed is loaded, a pair of electrodes adjacent to each other is disposed in the processing chamber, and high-frequency power is applied between the two electrodes. The processing chamber has a discharge chamber formed between the two electrodes and independent of the processing chamber. A gas outlet for supplying a processing gas to the processing chamber is provided in the discharge chamber. Batch type remote plasma processing apparatus characterized by having been established.