JP2013065872A - Manufacturing method of semiconductor device and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the film thickness uniformity in a wafer surface.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: supplying a process gas to a discharge chamber which is defined on an inner peripheral surface of a processing chamber 12, where multiple substrates are laminated and housed, and houses a pair of electrodes therein; applying electric power to the electrode to form plasma thereby activating the process gas. The steps are performed and the substrate is processed using the activated process gas.

Description

  The present invention relates to a film forming apparatus and a film forming method. For example, in a method for manufacturing a semiconductor integrated circuit device, an insulating film or a metal film is formed on a semiconductor wafer (hereinafter referred to as a wafer) in which a semiconductor integrated circuit including a semiconductor element is formed. It relates to what is useful for depositing.

DRAM (Dynamic Random Access), an example of a semiconductor integrated circuit device
The use of tantalum pentoxide (Ta2 O5) has been studied in order to form a capacitance portion (insulating film) of a capacitor of Memorry.
Since Ta ₂ O ₅ has a high dielectric constant, it is suitable for obtaining a large capacitance with a fine area.
From the viewpoint of productivity, film quality, and the like, Ta ₂ O ₅ is required to be formed by a MOCVD apparatus in a DRAM manufacturing method.

On the other hand, it is known that when the Ta ₂ O ₅ film is formed by the MOCVD apparatus, carbon (C) that causes the generation of leakage current adheres to the vicinity of the surface of the Ta ₂ O ₅ film.
Therefore, after the Ta ₂ O ₅ film is formed on the wafer, it is necessary to remove carbon existing near the surface of the Ta ₂ O ₅ film.
Since the single wafer remote plasma CVD apparatus can reduce the heating temperature of the wafer to 300 to 400 ° C. while preventing plasma damage to the wafer, the single wafer remote plasma CVD apparatus uses the Ta ₂ O ₅ film. Removal of carbon is being considered.

However, the single-wafer remote plasma CVD apparatus has a problem that the throughput is reduced because the removal of carbon from the Ta ₂ O ₅ film is performed one by one.
For example, if the net processing time in the single wafer remote plasma CVD apparatus is 10 minutes and the operation time of the transfer system is 2 minutes, the number of wafers processed per hour is only five.

In addition, since the single-wafer remote plasma CVD apparatus is generally a cold wall type in which only the susceptor is heated to the processing temperature, it is difficult to uniformly heat the wafer surface in the single-wafer remote plasma CVD apparatus. In addition, there is a problem that it is difficult to heat the wafer to 400 ° C. or higher due to the selection of the material of the chamber.
Furthermore, when a wafer is heated by embedding a heater in the susceptor, heat transfer to the wafer becomes non-uniform due to the warpage or planar roughness of the wafer. For example, uniform heating at 500 ° C. ± 1% is difficult. is there.
For this reason, the use of a heater with an electrostatic chuck is conceivable, but the heater with an electrostatic chuck is very expensive and has a problem in terms of cost effectiveness regarding reliability.

  An object of the present invention is to provide a film forming apparatus and a film forming method capable of obtaining a large throughput and improving the temperature uniformity of a substrate to be processed.

According to one aspect of the present invention, a process gas is supplied to a discharge chamber that is partitioned on an inner peripheral surface of a processing chamber in which a plurality of substrates are stacked and accommodated, and accommodates a pair of electrodes therein; And a step of activating the processing gas by applying electric power to the substrate, and a method of manufacturing a semiconductor device for processing the substrate using the activated processing gas.
According to another aspect of the present invention, a process gas is supplied to a space in the processing chamber between a pair of electrodes provided close to each other, and a step of stacking a plurality of substrates and storing them in the processing chamber However, a process of applying power to the pair of electrodes to generate plasma, activating the processing gas, and supplying the activated processing gas to the substrate, and processing the substrate A method of manufacturing a device is provided.
Furthermore, according to another aspect of the present invention, a step of supplying a first processing gas into a processing chamber in which a plurality of substrates are stacked and accommodated, and the pair of electrodes provided in proximity to each other are provided. While supplying the second processing gas to the space in the processing chamber, electric power is applied to the pair of electrodes to generate plasma to activate the second processing gas and to activate the second processing gas on the substrate. And a process for supplying the processing gas are alternately performed a plurality of times to provide a method for manufacturing a semiconductor device for processing the substrate.
Furthermore, according to another aspect of the present invention, a process chamber in which a plurality of substrates are stacked and accommodated, and a discharge that is partitioned by the inner peripheral surface of the process chamber and accommodates a pair of electrode portions that generate plasma. There is provided a substrate processing apparatus having a chamber and a gas supply pipe for supplying a processing gas to the discharge chamber.
Furthermore, according to another aspect of the present invention, a processing chamber for storing a plurality of substrates stacked thereon and a pair of electrodes for generating plasma upon application of electric power are provided close to each other. There is provided a substrate processing apparatus having a pair of electrodes and a gas supply pipe for supplying a processing gas to a space in the processing chamber between the pair of electrodes.
Furthermore, according to another embodiment of the present invention, a processing chamber for stacking and storing a plurality of substrates, and a pair of electrodes for generating plasma when power is applied, the pair of electrodes being provided close to each other Gas supply means for supplying a plurality of processing gases into the processing chamber and having a gas supply pipe for supplying at least one processing gas into a space in the processing chamber between the pair of electrodes And a substrate processing apparatus.

  According to the said means, the film thickness uniformity in a board | substrate can be improved.

It is a plane sectional view showing the CVD device which is the first embodiment of the present invention. It is a longitudinal cross-sectional view which follows the II-II line | wire of FIG. It is a longitudinal cross-sectional view which follows the III-III line | wire of FIG. It is a plane sectional view showing a CVD device which is a second embodiment of the present invention. It is a longitudinal cross-sectional view which follows the VV line of FIG. It is a plane sectional view showing a CVD device which is a third embodiment of the present invention. It is a longitudinal cross-sectional view which follows the VII-VII line of FIG. It is a longitudinal cross-sectional view which follows the VIII-VIII line of FIG. It is a plane sectional view showing a CVD device which is a fourth embodiment of the present invention. It is a longitudinal cross-sectional view which follows the XX line of FIG. It is a longitudinal cross-sectional view which follows the XI-XI line of FIG. It is a plane sectional view showing a CVD device which is a fifth embodiment of the present invention. It is a longitudinal cross-sectional view which follows the XIII-XIII line | wire of FIG. It is a longitudinal cross-sectional view which follows the XIV-XIV line | wire of FIG.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

In this embodiment, as shown in FIGS. 1 to 3, the heat treatment apparatus according to the present invention is configured as a batch type vertical hot wall type remote plasma CVD apparatus (hereinafter referred to as a CVD apparatus). .
That is, the CVD apparatus 10 includes a process tube 11 made of a highly heat-resistant material such as quartz glass and formed in a cylindrical shape with one end opening and the other end closed, and the process tube 11 has a vertical center line. It is arranged vertically and is fixedly supported.
A cylindrical hollow portion of the process tube 11 forms a processing chamber 12 in which a plurality of wafers 1 are accommodated, and a lower end opening of the process tube 11 forms a furnace port 13 for taking in and out the wafer 1 as an object to be processed. doing. The inner diameter of the process tube 11 is set to be larger than the maximum outer diameter of the wafer 1 to be handled.

  A heater 14 for heating the processing chamber 12 uniformly over the entire process tube 11 is provided outside the process tube 11 in a concentric circle so as to surround the periphery of the process tube 11. It is in the state installed vertically by being supported by (not shown).

A manifold 15 is in contact with the lower end surface of the process tube 11, and the manifold 15 is made of metal and is formed in a cylindrical shape having flanges projecting radially outward at both upper and lower ends. The manifold 15 is detachably attached to the process tube 11 for maintenance and inspection work and cleaning work on the process tube 11.
The manifold 15 is supported by a machine frame (not shown) of the CVD apparatus 10 so that the process tube 11 is installed vertically.

One end of an exhaust pipe 16 is connected to a part of the side wall of the manifold 15, and the other end of the exhaust pipe 16 is connected to an exhaust device (not shown) so that the processing chamber 12 can be exhausted. ing.
A seal cap 17 that closes the lower end opening is brought into contact with the lower end surface of the manifold 15 with the seal ring 18 interposed therebetween from the lower side in the vertical direction. The seal cap 17 is formed in a disk shape substantially equal to the outer diameter of the manifold 15, and is configured to be raised and lowered in the vertical direction by an elevator (not shown) installed vertically outside the process tube 11. .
A rotation shaft 19 is inserted on the center line of the seal cap 17, and the rotation shaft 19 moves up and down together with the seal cap 17 and is rotated by a rotation driving device (not shown). A boat 2 for holding a wafer 1 as an object to be processed is vertically supported and supported at the upper end of the rotating shaft 19.

The boat 2 includes a pair of end plates 3 and 4 at the top and bottom, and a plurality of (three in this embodiment) holding members 5 that are installed between the end plates 3 and 4 and arranged vertically. Each holding member 5 is provided with a large number of holding grooves 6 arranged at equal intervals in the longitudinal direction so as to open opposite to each other.
Then, by inserting the outer peripheral edge of the wafer 1 between the multiple holding grooves 6 of each holding member 5, the plurality of wafers 1 are held horizontally aligned on the boat 2 and aligned with each other. It has come to be.
A heat insulating cap portion 7 is formed on the lower surface of the lower end plate 4 of the boat 2, and a lower end surface of the heat insulating cap portion 7 is supported by the rotating shaft 19.

At a position different from the exhaust pipe 16 in the vicinity of the inner peripheral surface of the process tube 11 (a position opposite to 180 degrees in the illustrated example), a gas supply pipe 21 for supplying a processing gas is vertically provided. The gas supply pipe 21 is formed in an elongated circular pipe shape using a dielectric. The gas inlet port 22 at the lower end of the gas supply pipe 21 is bent at right angles to an elbow shape and penetrates the side wall of the manifold 15 radially outward and protrudes to the outside.
The gas supply pipe 21 has a plurality of air outlets 23 arranged in the vertical direction, and the number of air outlets 23 corresponds to the number of wafers 1 to be processed.
In the present embodiment, the number of these blowout ports 23 is equal to the number of wafers 1 to be processed, and the height position of each blowout port 23 is between the wafers 1 and 1 adjacent to each other vertically held by the boat. Each is set to face the space between.

A pair of support cylinders 24, 24 project radially outward from both sides of the gas supply port 21 of the gas supply pipe 21 in the manifold 15 in the circumferential direction. The holder portions 26, 26 of the pair of protective tubes 25, 25 are respectively inserted in the radial direction and supported.
Each protective tube 25 is formed in an elongated circular pipe shape using a dielectric and closed at the upper end, and the upper and lower ends thereof are aligned with the gas supply tube 21 and are vertically erected. The holder portion 26 at the lower end of each protection tube 25 is bent at right angles to an elbow shape, penetrates the support tube portion 24 of the manifold 15 radially outward, and protrudes to the outside. The inside communicates with the outside (atmospheric pressure) of the processing chamber 12.

A pair of electrodes 27, 27 formed in the shape of an elongated rod using a conductive material is concentrically laid in the hollow portions of both the protective tubes 25, 25, and a held portion which is the lower end portion of each electrode 27. 28 is held by the holder portion 26 via an insulating cylinder 29 and a shield cylinder 30 for preventing discharge.
A high frequency power supply 31 for applying high frequency power is electrically connected between the electrodes 27 and 27 via a matching unit 32.

Next, a method of removing carbon existing near the surface of the Ta ₂ O ₅ film for the capacitance portion of the DRAM capacitor using the CVD apparatus 10 having the above configuration will be described.
That is, in the present embodiment, a Ta ₂ O ₅ film (not shown) for forming a capacitance portion of the capacitor is deposited on the wafer 1 supplied to the CVD apparatus 10 in the previous MOCVD process. It is assumed that carbon (not shown) exists near the surface of the Ta ₂ O ₅ film, and this carbon is removed by the CVD apparatus 10.

A plurality of wafers 1 as substrates to be processed by the CVD apparatus 10 are loaded (charged) on the boat 2 by a wafer transfer device (not shown).
As shown in FIGS. 2 and 3, the boat 2 loaded with a plurality of wafers 1 is lifted by the elevator together with the seal cap 17 and the rotating shaft 19 and is carried into the processing chamber 12 of the process tube 11 (boat). Loading).

When the boat 2 holding the group of wafers is carried into the processing chamber 12, the processing chamber 12 is evacuated to a predetermined pressure or lower by an exhaust device connected to the exhaust pipe 16, and the power supplied to the heater 14 is increased. As a result, the temperature of the processing chamber 12 is raised to a predetermined temperature.
Since the heater 14 has a hot wall structure, the temperature of the processing chamber 12 is maintained uniformly throughout, and as a result, the temperature distribution of the group of wafers held in the boat 2 is uniform over the entire length. At the same time, the temperature distribution in the surface of each wafer 1 is uniform and the same.

After the temperature of the processing chamber 12 reaches a preset value and stabilizes, when oxygen (O ₂ ) gas is introduced as the processing gas 41 and the pressure reaches a preset value, the boat 2 is driven by the rotary shaft 19. A high frequency power is applied between the pair of electrodes 27 and 27 by the high frequency power supply 31 and the matching unit 32 while being rotated.
When oxygen gas, which is the processing gas 41, is supplied to the gas supply pipe 21 and high-frequency power is applied between the electrodes 27, 27, plasma 40 is introduced into the gas supply pipe 21 as shown in FIG. Is formed, and the process gas 41 becomes active.

  As shown by broken line arrows in FIGS. 1 and 2, the activated particles (oxygen radicals) 42 of the processing gas 41 are blown out from the respective outlets 23 of the gas supply pipe 21 to the processing chamber 12.

The activated particles 42 (hereinafter referred to as “active particles”) are blown out from the respective outlets 23 to flow between the wafers 1 and 1 facing each other and come into contact with the respective wafers 1. The contact distribution with respect to the entire group is uniform over the entire length of the boat 2, and the radial contact distribution in the wafer surface of each wafer 1 corresponding to the flow direction of the active particles is also uniform.
At this time, since the wafer 1 is rotated by the rotation of the boat 2, the contact distribution in the wafer surface of the active particles 42 flowing between the wafers 1 and 1 becomes uniform in the circumferential direction.

The active particles (oxygen radicals) 42 in contact with the wafer 1 react with the carbon existing near the surface of the Ta ₂ O ₅ film of the wafer 1 to generate CO (carbon monoxide), thereby converting the carbon into Ta ₂ O. Remove from ₅ films.
At this time, as described above, the temperature distribution of the wafer 1 is maintained uniformly over the entire length of the boat 2 and within the wafer surface, and the contact distribution of the active particles 42 with the wafer 1 is within the entire position of the boat 2 and within the wafer surface. Therefore, the action of removing carbon from the wafer 1 due to the thermal reaction of the active particles 42 becomes uniform at all positions of the boat 2 and within the wafer surface.

Incidentally, the processing conditions for removing carbon from the Ta ₂ O ₅ film for forming the capacitance portion of the DRAM capacitor are as follows.
The supply flow rate of oxygen gas used as the processing gas is 8.45 × 10 −1 to 3.38 Pa · m 3 / s, the processing chamber pressure is 10 to 100 Pa, and the temperature is 500 to 700 ° C.

  When a preset processing time elapses, supply of the processing gas 41, rotation of the rotary shaft 19, application of high frequency power, heating of the heater 14, exhaust of the exhaust pipe 16, and the like are stopped, and then the seal cap 17 is lowered. As a result, the furnace port 13 is opened and the group of wafers 1 is unloaded from the furnace port 13 to the outside of the processing chamber 12 while being held by the boat 2 (boat unloading).

The group of wafers carried out of the processing chamber 12 is discharged (lowered) from the boat 2 by the wafer transfer device.
Thereafter, the plurality of wafers 1 are batch processed by repeating the above-described operation.

  According to the embodiment, the following effects can be obtained.

1) By batch processing a plurality of wafers at a time, the throughput can be greatly improved as compared with the case where wafers are processed one by one.
For example, the number of sheets processed per hour in the case of sheet processing is 5 sheets when the processing time is 10 minutes and the operation time of the transport system is 2 minutes. On the other hand, the number of processed wafers per hour when batch processing 100 wafers is 66.7, assuming that the processing time is 30 minutes and the operation time of the transfer system is 60 minutes.

2) By heating a plurality of wafers held in a boat and carried into a processing chamber with a hot-wall heater, the boat's overall length of the wafer and the temperature within each wafer surface can be uniformly distributed. The processing state of the wafer by the active particles obtained by activating the processing gas with plasma, that is, the carbon removal distribution of the Ta2 O5 film can be made uniform.

3) By laying a pair of elongate electrodes opposite to each other in the processing chamber, plasma can be formed over the entire length of both electrodes, so that active particles obtained by activating the processing gas by the plasma are held in the boat. It is possible to supply even more uniformly over the entire length of the wafer group.

4) By laying a gas supply pipe through which the processing gas is supplied in the space between the pair of elongated electrodes, the processing gas can be activated by plasma inside the gas supply pipe, so that the plasma damage reaches the wafer. Therefore, it is possible to prevent a decrease in wafer yield due to plasma damage.

5) The active particles can be allowed to flow between the wafers by opening the gas supply pipe so that the air outlet faces the space between the upper and lower wafers held by the boat. It is possible to make the contact distribution with respect to the entire length of the boat uniform over the entire length of the boat, and as a result, the treatment state with the active particles can be made more uniform.

6) By rotating a boat holding a plurality of wafers, the contact distribution of the active particles flowing between the wafers in the wafer surface can be made uniform in the circumferential direction. It can be made uniform.

7) By removing the carbon of the Ta ₂ O ₅ film used for the capacitance part of the DRAM capacitor, the leakage current between the capacitor electrodes can be reduced, so that the performance of the DRAM can be improved.

  4 and 5 show a CVD apparatus according to the second embodiment of the present invention.

  This embodiment is different from the above embodiment in that a pair of electrodes 27A and 27B are laid on the inside and outside of the process tube 11, respectively, and the gas supply pipe 21A is located at a position other than the facing space between the electrodes 27A and 27B. It is the point arrange | positioned.

In the present embodiment, high frequency power is applied between the inner electrode 27A and the outer electrode 27B by the high frequency power source 31 and the matching unit 32, and the processing gas 41 is supplied to the processing chamber 12 by the gas supply pipe 21A. Then, plasma 40 is formed between the side wall of the process tube 11 and the inner electrode 27A, and the processing gas 41 becomes reactive.
The activated particles 42 are diffused throughout the processing chamber 12 to come into contact with the wafers 1 held in the boat 2. The active particles 42 in contact with the wafer 1 remove carbon intervening in the Ta2 O5 film of the wafer 1 by a thermal reaction.

  6 to 8 show a CVD apparatus according to the third embodiment of the present invention.

In the present embodiment, a pair of protective tubes 25, 25 provided vertically along the inner wall surface of the process tube 11 are bent downward and penetrate the side surfaces of the process tube 11. A pair of electrodes 27, 27 is inserted into 25 from below the side surface of the process tube 11.
In addition, a bowl-shaped partition wall 34 that forms a plasma chamber 33 is installed on the inner periphery of the process tube 11 so as to airtightly surround both the protective tubes 25 and 25, and the partition wall 34 has a plurality of outlets 35. The upper and lower wafers 1 are arranged so as to face each other.
Further, a gas supply pipe 21 is provided at a position where gas can be supplied to the plasma chamber 33 at the lower side of the process tube 11.

After supplying the processing gas 41 to the plasma chamber 33 and maintaining it at a predetermined pressure, when high-frequency power is applied between the electrodes 27 and 27 by the high-frequency power source 31 and the matching unit 32, the plasma 40 enters the plasma chamber 33. Once formed, the process gas 41 is activated.
Then, the activated electrically neutral particles 42 are blown out from the blowout opening 35 provided in the partition wall 34 and supplied to the processing chamber 12, thereby coming into contact with the wafers 1 held in the boat 2. Active particles 42 in contact with the wafer 1 treat the surface of the wafer 1.

  9 to 11 show a CVD apparatus according to the fourth embodiment of the present invention.

The CVD apparatus according to this embodiment includes a pair of electrodes 27 </ b> C and 27 </ b> C formed in an elongated flat plate shape having a length shorter than that of the process tube 11, and both the electrodes 27 </ b> C and 27 </ b> C are provided on one side wall of the process tube 11. The electrodes are inserted from the outside of the process tube 11 into a pair of electrode insertion openings 36, 36 which are opened so as to extend in the vertical direction with the upper and lower ends aligned with each other.
A pair of protective tubes 25C and 25C project from the inner peripheral surface of the process tube 11 so as to face the pair of electrode insertion openings 36 and 36, respectively, and the insertion end portions of both electrodes 27C and 27C are a pair of protective tubes. The tubes 25C and 25C are inserted and surrounded. The width between the electrode insertion ports 36 and 36 and the protective tubes 25C and 25C is set slightly wider than the plate thickness of the electrodes 27C and 27C, and the electrodes 27C and 27C are exposed to atmospheric pressure. ing.
Connection portions 28C and 28C project outwardly from the lower ends of the electrodes 27C and 27C, respectively, and a high-frequency power source 31 that applies high-frequency power to the connection portions 28C and 28C is electrically connected via a matching unit 32. Connected.
Between the two protective tubes 25C and 25C, a flat partition wall 34C that forms a plasma chamber 33C in cooperation with the two protective tubes 25C and 25C is installed, and a plurality of air outlets 35C are vertically mounted on the partition wall 34C. The wafers 1 and 1 are arranged so as to face each other.
A processing gas 41 is supplied from the gas supply pipe 21 to the plasma chamber 33C.

When high-frequency power is applied between the electrodes 27C and 27C by the high-frequency power source 31 and the matching unit 32 after the processing gas 41 is supplied to the plasma chamber 33C through the gas supply pipe 21 and maintained at a predetermined pressure, the plasma 40 Is formed in the plasma chamber 33C, and the processing gas 41 is activated.
Then, the activated particles 42 are blown out from the outlet 35 </ b> C provided in the partition 34 </ b> C and supplied to the processing chamber 12, thereby contacting each wafer 1 held in the boat 2. Active particles 42 in contact with the wafer 1 treat the surface of the wafer 1.

  12 to 14 show a CVD apparatus according to the fifth embodiment of the present invention.

The CVD apparatus according to the present embodiment includes a discharge tube 38 that forms a plasma chamber 37, and the discharge tube 38 is made of a dielectric and has a substantially square rectangular tube shape that is shorter than the process tube 11. It is formed and laid so as to extend in the vertical direction on a part of the outer periphery of the side wall of the process tube 11.
A plurality of air outlets 39 are arranged on the side wall of the process tube 11 surrounded by the discharge tube 38 so as to face each other between the upper and lower wafers 1 and 1. The gas 41 is supplied from the gas supply pipe 21.
On both sides in the circumferential direction of the discharge tube 38, a pair of electrodes 27D and 27D formed in an elongated flat plate shape having a length shorter than that of the discharge tube 38 are laid while being exposed to atmospheric pressure. A high-frequency power source 31 that applies high-frequency power is electrically connected to each connection portion 28D and 28D formed in 27D via a matching unit 32.

When high-frequency power is applied between the electrodes 27D and 27D by the high-frequency power source 31 and the matching unit 32 after the processing gas 41 is supplied to the plasma chamber 37 by the gas supply pipe 21 and maintained at a predetermined pressure, the plasma 40 is generated. Formed in the plasma chamber 37, the processing gas 41 becomes active.
The activated particles 42 are blown out from the blowout port 39 communicating with the discharge tube 38 and supplied to the processing chamber 12, thereby contacting the wafers 1 held in the boat 2. Active particles 42 in contact with the wafer 1 treat the surface of the wafer 1.

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

The number of outlets of the gas supply pipe is not limited to the number of wafers to be processed, but can be increased or decreased according to the number of wafers to be processed.
For example, the air outlets are not limited to be disposed between the upper and lower adjacent wafers, but may be arranged in two or three.

In the above embodiment, the case where the carbon intervening in the Ta ₂ O ₅ film of the capacitance portion of the capacitor has been described has been described. However, the heat treatment apparatus according to the present invention uses the foreign matter intervening in other film types (the film It can be applied to the case of removing molecules, atoms, etc. other than seeds), forming a CVD film on a wafer, diffusing, or heat treating.

For example, in a process of nitriding an oxide film for a DRAM gate electrode, nitrogen (N ₂ ) gas or ammonia (NH ₃ ) is supplied to a gas supply pipe.
) Or nitrogen monoxide (N ₂ O) was supplied, and the surface of the oxide film could be nitrided by heating the treatment chamber to room temperature to 750 ° C.
In addition, when the surface of the silicon wafer before the formation of the silicon germanium (SiGe) film is plasma-treated with active particles of hydrogen (H ₂ ) gas, the natural oxide film can be removed and a desired SiGe film is formed. We were able to.
In forming a nitrogen film at a low temperature, DCS (dichlorosilane) and NH ₃ (ammonia) are alternately supplied to form Si (silicon) and N (nitrogen) one layer at a time. when performing layer deposition), it was supplied by activating a plasma of NH3 during the supply of NH _3, a high-quality nitride film was obtained.

  In the above embodiment, the case where the wafer is processed has been described. However, the processing target may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

  DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate to be processed), 2 ... Boat, 3, 4 ... End plate, 5 ... Holding member, 6 ... Holding groove, 7 ... Thermal insulation cap part, 10 ... CVD apparatus (batch type remote plasma processing apparatus, heat treatment apparatus) , 11 ... Process tube, 12 ... Processing chamber, 13 ... Furnace port, 14 ... Heater, 15 ... Manifold, 16 ... Exhaust pipe, 17 ... Seal cap, 18 ... Seal ring, 19 ... Rotating shaft, 21 ... Gas supply pipe , 22 ... Gas inlet port, 23 ... Air outlet, 24 ... Supporting cylinder part, 25 ... Protective tube, 26 ... Holder part, 27 ... Electrode, 28 ... Holding part, 29 ... Insulating cylinder, 30 ... Shield cylinder, 31 DESCRIPTION OF SYMBOLS ... High frequency power supply, 32 ... Matching device, 40 ... Plasma, 41 ... Process gas, 42 ... Active particle, 21A ... Gas supply pipe, 27A ... Inner electrode, 27B ... Outer electrode, 33 ... Plasma chamber, 34 ... Septum, 35 ... Air outlet, 25C Protective tube, 27C ... electrode, 28C ... connection portion, 33C ... plasma chamber, 34C ... partition wall, 35C ... outlet, 36 ... electrode insertion port, 27D ... electrode, 28D ... connection portion, 37 ... plasma chamber, 38 ... discharge tube 39 ... Blow out.

Claims (6)

A step of supplying a processing gas to a discharge chamber which is partitioned on an inner peripheral surface of a processing chamber in which a plurality of substrates are stacked and stored, and stores a pair of electrodes therein;
Applying power to the electrodes to form plasma and activating the process gas;
And a method of manufacturing a semiconductor device, wherein the substrate is processed using the activated processing gas. Stacking a plurality of substrates and storing them in a processing chamber;
While supplying a processing gas to a space in the processing chamber between a pair of electrodes provided close to each other, electric power is applied to the pair of electrodes to generate plasma to activate the processing gas, and to the substrate Supplying the activated process gas;
A method of manufacturing a semiconductor device that performs processing on the substrate. Supplying a first processing gas into a processing chamber in which a plurality of substrates are stacked and accommodated;
While supplying a second processing gas to the space in the processing chamber between a pair of electrodes provided close to each other, power is applied to the pair of electrodes to generate plasma to activate the second processing gas. Supplying the second processing gas activated to the substrate, and
A method of manufacturing a semiconductor device in which the substrate is processed by alternately performing a plurality of times. A processing chamber for stacking and accommodating a plurality of substrates;
A discharge chamber that is partitioned into an inner peripheral surface of the processing chamber and houses a pair of electrode portions that generate plasma;
A gas supply pipe for supplying a processing gas to the discharge chamber;
A substrate processing apparatus. A processing chamber for stacking and accommodating a plurality of substrates;
A pair of electrodes for generating plasma when electric power is applied, and a pair of electrodes provided close to each other;
A gas supply pipe for supplying a processing gas to a space in the processing chamber between the pair of electrodes;
A substrate processing apparatus. A processing chamber for stacking and housing a plurality of substrates;
A pair of electrodes for generating plasma when electric power is applied, and a pair of electrodes provided close to each other;
Gas supply means for supplying a plurality of process gases into the process chamber, the gas supply means having a gas supply pipe for supplying at least one process gas into the space in the process chamber between the pair of electrodes;
A substrate processing apparatus.