JP4895685B2 - Substrate processing apparatus and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus, and for example, relates to an apparatus that can be effectively used for performing plasma processing on a semiconductor wafer (hereinafter referred to as a wafer) on which a semiconductor integrated circuit device (hereinafter referred to as an IC) is manufactured.

When performing plasma processing on a wafer in an IC manufacturing method, it is common to use a single wafer plasma processing apparatus.
However, the single-wafer plasma processing apparatus has a problem that throughput is reduced because wafers are processed one by one.
In addition, since the single-wafer plasma processing apparatus is generally a cold wall type in which only the susceptor holding the wafer is heated to the processing temperature, it is difficult to uniformly heat the wafer surface. is there.

In view of this, a batch type remote plasma processing apparatus has been proposed that includes a processing chamber into which a plurality of wafers are carried, and a pair of electrodes arranged vertically in the processing chamber of a process tube heated by a heater. For example, see Patent Document 1.
JP 2002-280378 A

However, in the above-described batch type remote plasma processing apparatus, it is considered that the processing status between wafers in the processing chamber may become non-uniform because plasma is supplied to each wafer remotely. .
Therefore, a batch type plasma processing apparatus has been proposed in which plasma is generated on the surface of each wafer by disposing an AC power application electrode at a predetermined distance from the surface of each wafer.
However, in such a batch type plasma processing apparatus, since a donut-shaped plasma is generated between the wafer surface electrode or the wafer back surface electrode and the wafer, the plasma processing on the wafer surface is performed. However, it is considered that there is a problem in that it becomes non-uniform under the influence of the plasma donut shape.

  An object of the present invention is to provide a substrate processing apparatus that can solve these problems of the prior art and improve the uniformity of the processing state within the substrate to be processed and the uniformity of the processing state between the substrates to be processed. It is to provide.

Representative inventions disclosed in the present application are as follows.
(1) A substrate processing apparatus that arranges a plurality of substrates to be processed in a processing chamber at a predetermined interval, supplies a processing gas into the processing chamber, and processes the substrate to be processed under a predetermined pressure. And
Each electrode body is disposed at a predetermined distance from the surface of each substrate to be processed, and each electrode body is constituted by a pair of electrode plates surrounded by a dielectric. .
(2) A plasma processing apparatus in which a plurality of substrates to be processed are arranged at predetermined intervals in a processing chamber, a processing gas is supplied into the processing chamber, and the substrate to be processed is processed under a predetermined pressure. ,
Each electrode body is disposed at a predetermined distance from the surface of each substrate to be processed, and each electrode body is configured to be applied with AC power having a frequency smaller than 13.56 MHz that is generally used. A plasma processing apparatus.
(3) The electrode body includes a pair of electrode plates and a dielectric surrounding the pair of electrode plates, and the pair of electrode plates are symmetrical with respect to the center of the plane in the same plane. The plasma processing apparatus according to (2), wherein the plasma processing apparatus is disposed.
(4) In the above (1) and (3), each of the electrode bodies is configured such that the same electrode plates of the pair of electrode plates are arranged opposite to each other.
(5) In the above (1) and (3), each of the electrode bodies is configured such that electrode plates of different polarities of the pair of electrode plates are arranged opposite to each other.

According to the above (1), since the plasma bodies are exclusively generated on the respective substrates to be processed by arranging the electrode bodies on the respective substrates to be processed, It becomes uniform between the substrates to be processed.
In addition, since the plasma is formed by a pair of electrode plates and is stably generated without being affected by the substrate to be processed, the plasma processing state can be either in the substrate to be processed or between the substrates to be processed. It becomes uniform.
According to the above (2), by applying AC power having a frequency smaller than 13.56 MHz that is generally used to each electrode body, plasma can be generated so as to spread over the entire area of each substrate to be processed. The plasma processing state is uniform both within the substrate to be processed and between the substrates to be processed.
In (1) and (3), by enclosing the pair of electrode plates with a dielectric, uniform plasma can be generated flatly on the surface of the dielectric by creeping discharge.
In addition, by surrounding the pair of electrode plates with a dielectric, it is possible to prevent plasma from coming into contact with the pair of electrode plates, so that it is possible to prevent impurities from being released from the electrode plates.
According to said (4), each electrode body is comprised so that the electrode plate of the same polarity of each pair of electrode plates may be arranged in opposition, respectively, and thereby, by a pair of electrode plates in the same plane In addition to the discharge, the discharge between the electrode plates of the adjacent electrode bodies can also be used, so that plasma can be generated efficiently.
According to said (5), each electrode body is comprised so that the electrode plate of a different polarity of each pair of electrode plates may face each other, and thereby the ions incident on the substrate to be processed can be obtained. Energy can be increased.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

In the present embodiment, the substrate processing apparatus according to the present invention is a batch type vertical hot wall type plasma processing apparatus (hereinafter referred to as a batch type plasma processing apparatus) that performs various plasma processes on a wafer in an IC manufacturing method. It is configured.
In the present embodiment, for the sake of convenience, the case where the number of wafers in one batch process is four has been described. However, in reality, about four to 150 wafers can be collectively handled. It shall be possible.

As shown in FIG. 1, in the batch type plasma processing apparatus 10 according to the present embodiment, an open cassette (hereinafter, referred to as a wafer carrier for storing and transporting the wafer 1 as a substrate to be processed) is used. 2) is used.
The batch type plasma processing apparatus 10 includes a housing 11. A front maintenance port 12 for maintenance is opened at the lower part of the front wall of the housing 11, and the front maintenance door 13 is built to open and close the front maintenance door 13.
A cassette loading / unloading port 14 is opened in the front maintenance door 13 so as to communicate between the inside and outside of the housing 11, and the cassette loading / unloading port 14 is opened and closed by a front shutter 15.

A cassette stage 16 is installed inside the casing 11 of the cassette loading / unloading port 14. The cassette 2 is loaded onto the cassette stage 16 by an in-process transfer device (not shown) and is also unloaded from the cassette stage 16.
By the in-process transfer device, the cassette 2 is placed on the cassette stage 16 so that the wafer 1 in the cassette 2 is in a vertical posture and the wafer loading / unloading port of the cassette 2 faces upward. The cassette stage 16 rotates the cassette 2 clockwise 90 degrees to the rear of the housing 11 so that the wafer 1 in the cassette 2 is in a horizontal posture, and the wafer loading / unloading port of the cassette 2 can be operated to face the rear of the housing 11. It is comprised so that.

A cassette shelf 17 is installed at a substantially central portion in the front-rear direction in the housing 11. The cassette shelf 17 is provided with a plurality of stages of transfer shelves 18 in which a plurality of cassettes 2 are stored, and the cassette shelf 17 is configured to store a plurality of cassettes 2 in a plurality of stages and a plurality of rows.
Further, a spare cassette shelf 19 is provided above the cassette stage 16, and the spare cassette shelf 19 is configured to preliminarily store the cassette 2.

  A cassette carrying device 20 is installed between the cassette stage 16 and the cassette shelf 17. The cassette carrying device 20 is constituted by a cassette elevator 20a that can be moved up and down while holding the cassette 2, and a cassette carrying mechanism 20b as a carrying mechanism. By the continuous operation of the cassette elevator 20a and the cassette carrying mechanism 20b, The cassette 2 is transported among the stage 16, the cassette shelf 17 and the spare cassette shelf 19.

A wafer transfer mechanism 21 is installed behind the cassette shelf 17. The wafer transfer mechanism 21 includes a wafer transfer device elevator 22 and a wafer transfer device 23 that is moved up and down by the wafer transfer device elevator 22.
The wafer transfer device elevator 22 is installed at the right end of the housing 11.
The wafer transfer device 23 is configured to hold the wafer 1 by a tweezer 24 and rotate or linearly move it.
The wafer transfer mechanism 21 is configured to perform the transfer operation of the wafer 1 by the continuous operation of the wafer transfer device elevator 22 and the wafer transfer device 23.

As shown in FIG. 1, a clean unit 25 composed of a fan and a dustproof filter is installed above the cassette shelf 17. The clean unit 25 is configured to distribute clean air, which is a cleaned atmosphere, inside the housing 11.
For the sake of convenience, although not shown, a clean unit is also installed at the left end of the housing 11 on the side opposite to the wafer transfer apparatus elevator 22 side. It is configured to be distributed in space.

As shown in FIGS. 1 and 2, a processing furnace 30 is vertically installed on the upper rear side of the casing 11.
As shown in FIG. 2, the processing furnace 30 includes a process tube 31 that forms a processing chamber 32. The process tube 31 is made of a dielectric material such as quartz and is formed in a cylindrical shape with one end opened and the other end closed. The process tube 31 is vertically arranged so that the center line is vertical and is fixedly supported. ing.
The cylindrical hollow portion of the process tube 31 forms a processing chamber 32 in which a plurality of wafers 1 are accommodated, and the inner diameter of the process tube 31 is set to be larger than the maximum outer diameter of the wafer 1 to be handled.

A manifold 33 is in contact with the lower end surface of the process tube 31, and the manifold 33 is formed in a cylindrical shape having a flange projecting radially outward at both upper and lower ends using a dielectric. The manifold 33 is detachably attached to the process tube 31 for maintenance and inspection work and cleaning work on the process tube 31.
The manifold 33 is supported by the housing 11 so that the process tube 31 is installed vertically.
A lower end opening of the manifold 33 forms a furnace port 34 for taking in and out the wafer 1. The furnace port 34 is normally closed by a furnace port shutter 35.

  One end of an exhaust pipe 36 is connected to the side wall of the manifold 33, and the other end of the exhaust pipe 36 is connected to an exhaust device (not shown) so that the processing chamber 32 can be exhausted.

A gas supply pipe 37 for supplying a processing gas is vertically provided at a position different from the exhaust pipe 36 of the manifold 33 (position opposite to 180 degrees in the illustrated example), and the gas supply pipe 37 is made of a dielectric. Used to form an elongated circular pipe.
The gas supply pipe 37 has a plurality of air outlets 38 arranged in the vertical direction, and the number of air outlets 38 corresponds to the number of wafers 1 to be processed. The number of blowout ports 38 matches the number of wafers 1 to be processed, and the height position of each blowout port 38 is set so as to face the space between the wafer 1 and the wafer 1 adjacent to each other vertically. ing.

  A heater 39 for uniformly heating the entire processing chamber 32 is provided outside the process tube 31 in a concentric circle so as to surround the periphery of the process tube 31. It is in the state where it was installed.

As shown in FIG. 1, a boat elevator 40 is installed in the casing 11 immediately below the processing furnace 30, and the arm 41 of the boat elevator 40 has a seal that closes the furnace port 34 during processing. The cap 42 is supported horizontally.
The seal cap 42 is formed in a disk shape substantially equal to the outer diameter of the manifold 33, and is configured to be hermetically sealed and closed by being raised by the boat elevator 40.

On the seal cap 42, a transfer jig (hereinafter referred to as a boat) 43 that holds a plurality (four in the present embodiment) of wafers 1 and transfers the wafers 1 to and from the inside and outside of the processing chamber 32 stands vertically. Has been supported. The boat 43 is formed using a dielectric such as quartz.
The boat 43 includes a pair of upper and lower end plates 44 and 45, and a plurality of (three in this embodiment) holding pillars 46 that are installed between the both end plates 44 and 45 and arranged vertically. Yes.
Each holding column 46 has a plurality of wafer receivers 47 (four in the present embodiment) arranged at equal intervals in the vertical direction and projecting inward in the radial direction. The upper surfaces of 47, 47 and 47 constitute the same horizontal plane so as to hold the wafer 1 horizontally.

  A plurality of electrode bodies 50 (four in this embodiment) are arranged between the holding pillars 46 and are arranged horizontally at equal intervals in the longitudinal direction. They are respectively arranged between the wafer receivers 47. The interval between the upper and lower electrode bodies 50 and 50 is determined in consideration of the dimensions necessary for delivery of the wafer 1 and the action of plasma processing to be described later.

As shown in FIG. 3, the electrode body 50 is formed in a circular flat plate shape, and the outer diameter is set larger than the outer diameter of the wafer 1.
The electrode body 50 includes a first electrode plate 51 and a second electrode plate 52 that are paired with each other, and a dielectric 53.
The first electrode plate 51 and the second electrode plate 52 are made of a conductive metal material, and are formed into semicircular flat plate shapes obtained by dividing a true circular flat plate into two equal parts. The first electrode plate 51 and the second electrode plate 52 are arranged symmetrically with respect to the center of this plane with the semicircular strings facing each other at a predetermined interval in the same plane. An insulating gap 54 is formed between the opposing surfaces of the first electrode plate 51 and the second electrode plate 52 by this constant interval.
In this arrangement state, the first electrode plate 51 and the second electrode plate 52 are surrounded by a dielectric 53 formed of a dielectric material such as quartz. Fixed end portions 51a and 52a, which also serve as terminals, protrude from the center portions of the arc-shaped outer peripheries of the first electrode plate 51 and the second electrode plate 52, and both fixed end portions 51a and 52a are dielectrics. By being respectively fixed to 53, the thermal expansion difference of the 1st electrode plate 51 and the 2nd electrode plate 52, and the dielectric material 53 is absorbed.

As shown in FIG. 4, the electrode bodies 50 are arranged so that the first electrode plates 51 and 51 and the second electrode plates 52 and 52 have the same polarity in the electrode bodies 50 and 50 that are vertically adjacent to each other. It is configured.
For example, when the first electrode plate 51 of the upper electrode body 50 and the first electrode plates 51 of the lower electrode body 50 are cathodes, the second electrode plate 52 of the upper electrode body 50 and the lower electrode The second electrode plates 52 of the body 50 are configured to be anodes.
An AC power supply 61 for applying AC power is electrically connected to the fixed end 51 a of the first electrode plate 51 of the electrode body 50 and the fixed end 52 a of the second electrode plate 52 via a matching unit 62. The first electrode plate 51 and the second electrode plate 52 of each electrode body 50 are connected in parallel.
As the AC power, an AC power source having a low frequency from several kHz to a high frequency of 13.56 MHz or the like is used, and an AC power having a frequency smaller than 13.56 MHz that is generally used is applied to each electrode body 50. It is configured as follows.
An insulating transformer 63 is provided in the middle of the path for supplying AC power, and the first electrode plate 51 and the second electrode plate 52 of each electrode body 50 are insulated from the ground.

  Next, the operation of the batch type plasma processing apparatus 10 according to the above configuration will be described.

As shown in FIG. 1, the cassette loading / unloading port 14 is opened by the front shutter 15 before the cassette 2 is supplied to the cassette stage 16.
Thereafter, the cassette 2 is loaded from the cassette loading / unloading port 14 and mounted on the cassette stage 16 so that the wafer 1 is in a vertical posture and the wafer loading / unloading port of the cassette 2 faces upward.
Thereafter, the cassette 2 is moved 90 degrees clockwise and vertically to the rear of the housing 11 so that the wafer 1 in the cassette 2 is placed in a horizontal posture by the cassette stage 16 and the wafer loading / unloading port of the cassette 2 faces the rear of the housing 11. Rotated degrees.
Next, the cassette 2 is automatically transported and delivered by the cassette transport device 20 to the designated shelf position of the cassette shelf 17 or the spare cassette shelf 19.

After being temporarily stored, the cassette 2 is transferred from the cassette shelf 17 to the spare cassette shelf 19 to the transfer shelf 18 by the cassette transfer device 20 or directly transferred to the transfer shelf 18.
When the cassette 2 is transferred to the transfer shelf 18, the wafer transfer device 23 picks up the wafer 1 in the cassette 2 through the wafer loading / unloading port of the cassette 2 by the tweezer 24, and the wafer 1 is transferred from the cassette 2 to the boat 43. The wafer 1 is transferred, and the wafer 1 is transferred from the tweezer 24 onto the uppermost wafer receiver 47 of the boat 43.
When the wafer 1 is transferred between the uppermost wafer receivers 47, the wafer transfer device 23 returns the tweezer 24 to the cassette 2 and picks up the next wafer 1 by the tweezer 24.
By repeating the above operation, the wafer transfer device 23 sequentially transfers the wafers 1 between the wafer receivers 47 up to the lowest level.

The boat 43 on which the wafer 1 is transferred between the wafer receivers 47 of all the stages is lifted by the boat elevator 40 and is carried into the processing chamber 32 of the processing furnace 30 as shown in FIG. Loading).
When the boat 43 reaches the upper limit, the seal cap 42 closes the furnace port 34 in a sealed state, so that the processing chamber 32 is hermetically closed.
When closed hermetically, the processing chamber 32 is exhausted by the exhaust pipe 36 and heated to a predetermined temperature (for example, about 400 ° C.) by the heater 39.
At this time, since the heater 39 has a hot-wall structure, the temperature of the processing chamber 32 is maintained uniformly throughout, so that the temperature distribution of the group of wafers held in the boat 43 is uniform over the entire length. At the same time, the temperature distribution in the surface of each wafer 1 is uniform and the same.

  After the temperature in the processing chamber 32 reaches a preset value and stabilizes, the processing gas 70 is supplied from the gas supply pipe 37 into the processing chamber 32, and the pressure in the processing chamber 32 is a preset value. , AC power different in phase by 180 degrees is applied to the first electrode plate 51 and the second electrode plate 52 of each stage electrode body 50 by the AC power supply 61, the matching unit 62, and the insulating transformer 63, respectively. .

In the present embodiment, since the first electrode plate 51 and the second electrode plate 52 are entirely surrounded by the dielectric 53 in a disc shape, creeping discharge is generated on the surface of the disc-shaped dielectric 53. .
At this time, the first electrode plate 51 and the second electrode plate 52 are formed in a semicircular flat plate shape obtained by dividing a true circular flat plate into two equal parts, and are arranged symmetrically in the same plane. Since the discharge is uniform over the entire surface of the dielectric 53, the plasma 60 is generated uniformly and flat as shown in FIG.
Incidentally, since the first electrode plate 51 and the second electrode plate 52 are entirely covered with the dielectric 53, the plasma 60, the first electrode plate 51, and the second electrode plate 52 are not in direct contact with each other. Therefore, it is possible to prevent impurities from being released from the first electrode plate 51 and the second electrode plate 52.

  Furthermore, the electrode bodies 50 of each stage are configured so that the first electrode plates 51 and 51 and the second electrode plates 52 and 52 have the same polarity in the electrode bodies 50 and 50 that are vertically adjacent to each other. In addition to the discharge by the first electrode plate 51 and the second electrode plate 52 in the electrode body 50 in each stage, the first electrode plate 51 and the second electrode plate 52 of the electrode bodies 50 and 50 adjacent in the vertical direction are used. Since discharge can also be used, the plasma 60 can be generated efficiently.

Further, AC power having a frequency smaller than 13.56 MHz that is generally used is applied between the first electrode plate 51 and the second electrode plate 52 of the electrode body 50 in each stage. Thereby, the plasma 60 can be generated so as to spread over the entire area of each wafer 1.
FIG. 6 is a graph showing the nitride film thickness distribution in the wafer surface when 13.56 MHz AC power and 400 kHz AC power are used.
According to FIG. 6, in the case of 13.56 MHz, the film thickness distribution in the wafer surface is thick at the center and thin at the periphery, whereas at 400 kHz, it is substantially uniform throughout. .

The processing gas 70 supplied to the gas supply pipe 37 is blown out from the respective outlets 38 to the upper space of the wafer 1 in each stage, and the reaction is activated by the uniform and flat plasma 60 generated on the lower surface of each electrode body 50. It becomes a state.
Particles activated by the electrode bodies 50 at each stage (hereinafter referred to as active particles) come into contact with the main surface on the active area side of the wafer 1 placed between the wafer receivers 47 at each stage, and the wafer 1. Is subjected to plasma treatment.
At this time, as described above, the temperature distribution of the wafer 1 is maintained uniformly over the entire length of the boat 43 and within the wafer surface, and the contact distribution of the active particles with the wafer 1 by the uniform and flat plasma 60 is different for each stage. Since the wafers 1 are equal and uniform in the wafer surface of the wafers 1 of the respective stages, the plasma processing state of the wafers 1 by the plasma reaction of the active particles is between the wafers 1 of the respective stages and the wafers of the respective stages. It becomes a uniform state within one wafer surface.

  When the processing time set in advance elapses, the seal cap 42 is lowered by the boat elevator 40 after the supply of the processing gas 70, the heating of the heater 39, the application of AC power, and the exhaust pipe 36 are stopped. The furnace port 34 is opened, and the boat 43 is unloaded from the furnace port 34 to the outside of the processing chamber 32.

The wafer 1 carried out of the processing chamber 32 is stored in the cassette 2 by a procedure reverse to the operation of the wafer transfer device 23 described above.
By repeating the above operation, a plurality of wafers 1 are batch processed.

  According to the embodiment, the following effects can be obtained.

1) Since a plurality of wafers face each of the multi-stage electrode bodies and are subjected to plasma processing, a plasma atmosphere can be generated exclusively for each stage of wafers. Uniformity can be achieved both within the wafer surface and between each wafer.

2) By uniformly heating a plurality of wafers opposed to each of a plurality of stages of electrode bodies with a hot wall type heater, the wafer boat length and the temperature within each wafer surface can be uniformly distributed. Therefore, the plasma processing status of the wafer can be made uniform both within the wafer surface and between each wafer.

3) By batch processing a plurality of wafers at a time, the throughput can be greatly improved as compared with the case where wafers are processed one by one.

4) In the electrode body, the semicircular first electrode plate and the semicircular second electrode plate are arranged symmetrically in the same plane so that the surface discharge is uniformly formed on the surface of the dielectric. Since uniform and flat plasma can be generated on the surface of the electrode body, uniform plasma treatment can be performed on the entire main surface of the wafer.

5) Avoiding direct contact between the plasma and the first and second electrode plates by constructing the electrode body by covering the first and second electrode plates entirely with a dielectric. Therefore, it is possible to prevent the emission of impurities from the first electrode plate and the second electrode plate.

6) By applying AC power having a frequency smaller than 13.56 MHz between the first electrode plate and the second electrode plate of each stage electrode body, plasma can be generated so as to spread over the entire area of each wafer. Therefore, the film thickness distribution in the wafer surface can be formed substantially uniformly throughout.

7) By configuring the wafer and the electrode body so that they do not come into contact with each other, it is easier to transfer wafers to the boat as much as it is possible to dispense with pins compared to a structure in which the wafer is placed on the susceptor electrode. Can be

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

As shown in FIG. 7, the electrode bodies 50 at the respective stages are arranged so that the first electrode plates 51 and 51 and the second electrode plates 52 and 52 have different polarities in the electrode bodies 50 and 50 adjacent in the upper and lower sides. You may comprise respectively.
For example, when the first electrode plate 51 of the upper electrode body 50 and the second electrode plate 52 of the lower electrode body 50 are cathodes, the second electrode plate 52 and the lower electrode body of the upper electrode body 50 are used. 50 first electrode plates 51 are each configured to be an anode.
By configuring the first electrode plates 51 and 51 and the second electrode plates 52 and 52 to have different polarities in the upper and lower adjacent electrode bodies 50 and 50, the energy of ions incident on the wafer 1 is increased. Since it can be increased, the efficiency of the plasma treatment can be improved.

  The batch type plasma processing apparatus according to the present invention can be used for plasma processing such as plasma CVD and dry etching in general.

  Further, the substrate to be processed is not limited to a wafer, but may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

1 is a partially omitted perspective view showing a batch type plasma processing apparatus according to an embodiment of the present invention. It is front sectional drawing which follows the II-II line of FIG. (A) is a top sectional view showing an electrode body, (b) is a sectional view which meets a bb line of (a). It is a circuit diagram which shows the supply circuit of alternating current power. It is a partially omitted front sectional view showing a plasma processing step. It is a graph which shows the relationship between the frequency of applied electric power, and film thickness distribution. It is a circuit diagram which shows the supply circuit of the alternating current power in other embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate), 2 ... Cassette, 10 ... Batch type plasma processing apparatus (substrate processing apparatus), 11 ... Housing, 12 ... Front maintenance port, 13 ... Front maintenance door, 14 ... Cassette loading / unloading port, 15 ... Front shutter, 16 ... cassette stage, 17 ... cassette shelf, 18 ... transfer shelf, 19 ... spare cassette shelf, 20 ... cassette transfer device, 20a ... cassette elevator, 20b ... cassette transfer mechanism, 21 ... wafer transfer mechanism, 22 ... Wafer transfer device elevator, 23 ... Wafer transfer device, 24 ... Tweezer, 25 ... Clean unit, 30 ... Processing furnace, 31 ... Process tube, 32 ... Processing chamber, 33 ... Manifold, 34 ... Furnace port, 35 ... Furnace Mouth shutter, 36 ... exhaust pipe, 37 ... gas supply pipe, 38 ... air outlet, 39 ... heater, 40 ... boat elevator, 41 ... arc 42 ... Seal cap, 43 ... Boat (conveying jig), 44, 45 ... End plate, 46 ... Holding column, 47 ... Wafer receiver, 50 ... Electrode body, 51 ... First electrode plate (one electrode plate), 51a ... fixed end, 52 ... second electrode plate (the other electrode plate), 52a ... fixed end, 53 ... dielectric, 54 ... insulating gap, wall, 60 ... plasma, 61 ... AC power supply, 62 ... matching 63, insulation transformer, 70 ... processing gas.

Claims (2)

A substrate processing apparatus that arranges a plurality of substrates to be processed in a processing chamber at a predetermined interval, supplies a processing gas into the processing chamber, and processes the substrate to be processed under a predetermined pressure,
Each electrode body is arranged at a predetermined distance from the surface of each substrate to be processed, and each electrode body is constituted by a pair of electrode plates surrounded by a dielectric ,
An AC power supply is connected to each of the electrode bodies .   A plurality of substrates to be processed are arranged at predetermined intervals in a processing chamber, a processing gas is supplied into the processing chamber, and the processing substrate is processed under a predetermined pressure,
  Each electrode body is arranged at a predetermined distance from the surface of each substrate to be processed, and each electrode body is constituted by a pair of electrode plates surrounded by a dielectric,
  A method of manufacturing a semiconductor device using a substrate processing apparatus to which an AC power source is connected to each electrode body,
  A method of manufacturing a semiconductor device, comprising: arranging the substrate in the processing chamber; and applying AC power to the electrode bodies by the AC power source to plasma process the substrate.

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