CN105590825A - Gas conveying apparatus and plasma processing apparatus - Google Patents
Gas conveying apparatus and plasma processing apparatus Download PDFInfo
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- CN105590825A CN105590825A CN201410608881.5A CN201410608881A CN105590825A CN 105590825 A CN105590825 A CN 105590825A CN 201410608881 A CN201410608881 A CN 201410608881A CN 105590825 A CN105590825 A CN 105590825A
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Abstract
The invention discloses a gas conveying apparatus. The gas conveying apparatus comprises a gas diverter used for shunting a reaction gas into multiple controllable paths for outputting to different areas of a gas diversion member in a plasma reaction chamber; and a gas regulator used for receiving one path of the reaction gas output via the gas diverter and shunting the path of the reaction gas into multipath branches for outputting to different subareas correspondingly in an area of the path of the reaction gas on the gas diversion member. The gas regulator comprises multiple gas conveying pipelines communicating with the different subareas to the corresponding area, at least one gas conveying pipeline comprises at least three branch pipelines connected in parallel and a flow switching assembly, and the flow switching assembly is used for controlling the conveying flow, the conduction state and the cut-off state of each branch pipeline so as to adjust the gas flow conveyed by the gas conveying pipeline. According to the invention, multi-area distributed control of multipath reaction gases with different flow-rate ratios on a gas diversion member can be realized.
Description
Technical field
The present invention relates to semiconductor processing equipment, particularly a kind of air transporting arrangement and Cement Composite Treated by PlasmaDevice.
Background technology
At present in plasma process, the normally reaction chamber by plasma processing apparatus by reacting gasThe gas spray that internal upper part arranges imports in reaction chamber, and reacting gas forms plasma through radio-frequency driveBody, then the bias voltage of the electrostatic chuck by bottom in reaction chamber makes plasma bombardment be positioned at chuckOn wafer, thereby realize the plasma process such as etching, deposition to wafer.
But, due to gas conveying, electric field action or the many reasons such as inhomogeneous of bleeding, easily make to produceThe zones of different of plasma on semiconductor wafer surface has different distribution densities, thereby at wafer tableThe zones of different of face produces different processing speeds, for along the radially-arranged zones of different of wafer, as centerRegion and fringe region, this inhomogeneous processing is especially obvious, and then causes zones of different on wafer to formThe performance difference of semiconductor devices, the technology controlling and process to semiconductor devices manufacture and product yield have very large shadowRing.
In order to address this problem, prior art has proposed a kind of gas diverter, and it can be shunted reacting gasFor the multichannel of different flow, thereby the multichannel reacting gas of different flow is delivered to the difference of gas sprayRegion, make zones of different in reaction chamber can obtain different densities plasma, to improve wholeThe uniformity of individual wafer surface processing. But, each road reacting gas that this gas diverter is shuntedRange of flow is identical, as 10% to 90%, if wish to obtain especially little flow for a certain regionRatio, as 0.5%, existing gas diverter cannot be realized.
Therefore, need to provide a kind of air transporting arrangement to improve above-mentioned defect.
Summary of the invention
Main purpose of the present invention is to overcome the defect of prior art, provides a kind of air transporting arrangement, energyEnough zoness of different in the reaction chamber of plasma processing apparatus are carried different flow, particularly low dischargeReacting gas, improve the control accuracy of gas flow.
For reaching above-mentioned purpose, the invention provides a kind of air transporting arrangement, be applied to Cement Composite Treated by Plasma dressPut, described plasma processing apparatus comprises reaction cavity, and described air transporting arrangement comprises gas diverterAnd at least one gas conditioner. Described gas diverter is controlled for reacting gas is split into flowMultichannel is to export the gas with various distributed areas of the gas flow guiding part that is positioned at described reaction cavity to; Described gasBody adjuster is connected between described gas diverter and described gas flow guiding part, for receiving through described gasA wherein road reacting gas of current divider output is also split into many branch roads to export described gas flow guiding toOn part corresponding to the different subregions in the distribution of gas region of this road reacting gas. Described gas conditioner bagDraw together many gas transmission lines that the different subregions in the distribution of gas region corresponding from this are connected, Qi ZhongzhiA few gas transmission line comprises at least three take-off lines in parallel and flow switch assembly, and this flow is cutChange assembly for controlling the delivery flow rate of take-off line described in each and conducting and cut-off state to regulate this gasThe gas flow that body transfer line is carried.
Preferably, described flow switch assembly comprise be arranged at described in multiple limits at least three take-off linesFluid element and at least two switch elements.
Preferably, described many gas transmission lines comprise the first gas transmission line and the second gas delivery tubeLine, described the second gas transmission line comprises first, second, and third take-off line and described flow in parallelChangeover module, described flow switch assembly comprise the first current limiting element of being arranged on described the first take-off line,Be arranged at the second current limiting element and first switch element of the series connection on described the second take-off line and arrangeThe 3rd current limiting element and the second switch element of the series connection on described the 3rd take-off line.
Preferably, on described the first gas transmission line, the 4th current limiting element is set.
Preferably, described flow switch assembly also comprise be arranged on described the first take-off line with describedThe 3rd switch element of one current limiting element series connection.
Preferably, the two-way that reacting gas is split into first flow and the second flow by described gas diverter is anti-Answer gas to export the first distribution of gas region and the second distribution of gas region of described gas flow guiding part, institute toState the two-way that the reacting gas of described the second flow splits into the 3rd flow and the 4th flow by gas conditioner anti-Answer gas to transfer to respectively the first subregion and second subregion in described the second distribution of gas region.
Preferably, each described current limiting element is metering hole, and each described switch element is switch valve.
Preferably, the size difference of each described metering hole.
Preferably, described gas flow guiding part is gas spray.
According to a further aspect in the invention, the present invention also provides a kind of plasma processing apparatus, comprises anti-Answer cavity and above-mentioned air transporting arrangement.
Beneficial effect of the present invention is by gas conditioner a wherein road reaction of gas diverter shuntingGas switches to many branch roads, and passes through the design of at least three take-off lines of flow switch assembly and parallel connectionControl the flow proportional of each branch road, and make specific region in reaction chamber can obtain required flowReacting gas is supplied with, so regulate according to demand zones of different in plasma processing apparatus reaction cavity etc.Gas ions distribution density, the homogeneity of the semiconductor devices that on raising wafer, zones of different forms.
Brief description of the drawings
Fig. 1 is the structural representation of the air transporting arrangement of one embodiment of the invention.
Detailed description of the invention
For making content of the present invention more clear understandable, below in conjunction with Figure of description, to content of the present inventionBe described further. Certainly the present invention is not limited to this specific embodiment, those skilled in the art instituteThe general replacement of knowing is also encompassed in protection scope of the present invention.
Fig. 1 has shown the air transporting arrangement of the present invention that one embodiment of the present invention provides. This gas is carriedApplication of installation is in plasma processing apparatus, and plasma processing apparatus comprises reaction chamber 1, reaction chamber 1Interior top is provided with gas flow guiding part 4, and gas flow guiding part 4 can comprise multiple distribution of gas district. This enforcementIn example, gas flow guiding part 4 is gas spray, can be also gas flow guiding ring or water conservancy diversion in other embodimentsOther similar devices such as plate. Air transporting arrangement is carried for the multichannel that reacting gas is split into different flowTo the gas with various distributed area of gas flow guiding part 4, to introduce the zones of different in reaction chamber. Gas is carriedDevice comprises gas diverter 2 and gas conditioner 3, and reacting gas is divided into multi-way stream by gas diverter 2Measure different reacting gas, for example, in the present embodiment, distribution of gas district 41 Hes are set on gas spray 442, gas diverter 2 correspondences form reacting gas shunting to have different first flow a and secondThe two-way reacting gas of amount b, respectively by pipeline 21 and 22 outputs. Gas diverter 2 can comprise gasSeparator and flow controller are carried out its shunting and flow regulating function, and react through the multichannel of its shuntingGas can be the identical or different gas of composition.
It should be noted that the multichannel reacting gas of shunting through gas diverter 2 in the present invention is also not all directExport gas spray 4 to, one of them road reacting gas is by further shunting and tune of gas conditioner 3Amount of restriction. As shown in Figure 1, gas conditioner 3 is arranged between gas diverter 2 and gas spray 4,Be arranged on specifically at least one pipeline of gas diverter 2, defeated through gas diverter 2 for receivingThe wherein road reacting gas going out and split into many branch roads with export on gas spray 4 corresponding toDifferent subregions in the distribution of gas region of this road reacting gas. Gas conditioner 3 can be also multiple,Respectively to further shunting and adjust flux of multichannel reacting gas. In the present embodiment, arrange with gas conditioner 3On pipeline 22, distribution of gas district 42 has two sub regions 42A and 42B is illustrated, wherein gasDistributed areas 41,42 correspond respectively to marginal position and the center of gas spray 4, and gas dividesThe subregion 42B in cloth region is than the center of the more close gas spray of 42A, certainly in other embodiments alsoDistribution of gas region in gas spray marginal position can be divided into multiple subregions to provide respectivelyThe further gas flow of segmentation. It is b1 that flow b Yi road reacting gas is divided into flow by gas conditioner 3With two branch roads of b2 and be delivered to subregion 42A and 42B, it comprises the gas being connected with all subregionBody transfer line 31,32. Wherein, gas transmission line 32 comprise three take-off line 32a, 32b in parallel,32c, and flow switch assembly. Flow switch assembly is used for controlling gas transmission line 32 Zhong Getiao branchesThe delivery flow rate of pipeline 32a, 32b, 32c and conducting and cut-off state, thus make gas transmission line 32The gas flow of carrying is regulated. Flow switch assembly can comprise current limiting element and switch element, whereinCurrent limiting element is responsible for controlling the maximum gas flow of take-off line, and switch element is responsible for controlling leading of take-off lineLead to or cut-off, just can make gas transmission line 32 export various flows by the cooperation of current limiting element and switch elementThe reacting gas of amount or flow proportional. The present embodiment and each current limiting element are hereinafter described metering hole, canDetermine the maximum gas flow of metering hole output according to metering hole self specification, the bore of for example metering holeThe gas flow of larger output is also larger; Each switch element is switch valve, only has two kinds of opening and closingState. In addition, the quantity of take-off line also can be greater than three, to realize larger flow adjustment range.
As shown in Figure 1, metering hole 321 is set on take-off line 32a, on take-off line 32b, series connection is setMetering hole 322 and switch valve 323, metering hole 324 and the switch valve of series connection are set on take-off line 32c325. So, the control of the open and-shut mode by two switch elements 323,325, can realize 4 kinds of rowsRow combining form, that is: two switch valves all cut out, take-off line 32b, 32c cut-off, gas transmission lineThe 32 gas flow b2 that export are the gas flow of take-off line 32a output; Only switch valve 323 is opened,Take-off line 32b conducting, the gas flow b2 that gas transmission line 32 is exported be take-off line 32a andThe gas flow sum of 32b output; Only switch valve 325 is opened, take-off line 32c conducting, gas transportThe gas flow b2 that pipeline 32 is exported is the gas flow sum of take-off line 32a and 32c output; WithAnd two switch valves are all opened, take-off line 32b, 32c conducting, gas transmission line 32 is exportedGas flow b2 is the gas flow sum of three take-off line outputs. Therefore, moving by the switching of switch valveMake to coordinate the maximum output gas flow of gas that limits of metering hole, gas flow b2 accounts for the ratio of gas flow b canTo switch to four kinds, then coordinate the shunt ratio of gas diverter 2, just can adjust the output to subregion 42BReaction gas flow. Metering hole 321,322 and 324 specification can identical can be not identical yet.Suppose the selection of the bore that coordinates each metering hole, can in above-mentioned four kinds of situations, realize respectively air shooterThe gas flow b2 that line 32 is carried is 4%b, 13%b, 19%b and 25%b. If reacting gas is initialTotal flow is Q=a+b, and through the shunting of gas diverter 2, the gas flow ratio that pipeline 22 is exported isB/ (a+b)=10%～90%, the maximum that transfers to so the gas flow of gas spray region 42B is90% × 25%Q ≈ 23%Q, minimum of a value is 10% × 4%Q=0.4%Q, is supplied to as known from the above region 42BThe adjustable range of flow of reacting gas expanded, and be not limited only to commercial gas current divider 10%～90%Adjustable range, be specially adapted to the supply of low discharge reacting gas. Certainly, in other embodiments, alsoAnother switch valve of can connecting on take-off line 32a, can be real by the on-off action of three switch valvesThe gas flow ratio that existing gas transmission line 32 output gas flow of gas b2 account for gas flow b is seven settingsBetween value, switch, realize the wider adjusting of the gas flow that is supplied to region 42B. At this kind of embodimentIn, preferably, the specification of metering hole 321,322 and 324 can be set to not identical, so gasThe control range of the gas flow that transfer line 32 is exported is larger. In addition, as shown in the figure, gas conditioner 3Gas transmission line 31 on a metering hole 311 also can be set, the specification of metering hole 311 is according to subareaThe gas demand of territory 42A arranges, and it can be identical with the specification of metering hole 321 and 322,Also can be set to not identical.
As known from the above, the present invention, by the design of gas conditioner, will shunt Yi road reacting gas moreInferiorly split into many branch roads, and on a branch road, at least three take-off lines in parallel and stream are set thereinThe gas flow of this branch road of amount changeover module control, and the reacting gas correspondence that flow is satisfied the demands is dispensed toThe respective regions of gas spray, this kind of design can realize multichannel reacting gas that flow-rate ratio is different wait fromIn daughter treating apparatus reaction chamber, the distribution control in multiple regions on gas flow guiding part, compares and only has two pieces pointsThe design of by-pass line, has improved the number of combinations at gas flow b2 place, has changed two take-off lines and has only had twoPlant the restriction of combination to technique, adopt the take-off line of multi-channel parallel can effectively realize multiple gas with variousThe combination of flow, especially, can accurately provide small-flow gas to the less gas of gas demand to divideCloth district, thus required plasma density distribution obtained, to meet the demand of different process. In addition open,The setting of closing element and current limiting element also has advantage simple to operate, with low cost.
Be understandable that the air transporting arrangement in the present invention can be applicable to various Cement Composite Treated by Plasma dressesIn putting, as plasma etching, plasma physics gas deposition, plasma chemical vapor deposition, etc.The devices such as gas ions surface clean.
Although the present invention discloses as above with preferred embodiment, so described many embodiment only for convenience of explanationAnd give an example, not in order to limit the present invention, those skilled in the art do not depart from the present invention's spirit andUnder the prerequisite of scope, can do some changes and retouching, the protection domain that the present invention advocates should be with claimDescribed in book, be as the criterion.
Claims (10)
1. an air transporting arrangement, is applied to plasma processing apparatus, described plasma processing apparatusComprise reaction cavity, it is characterized in that, described air transporting arrangement comprises:
Gas diverter, for reacting gas is split into the controlled multichannel of flow with export to be positioned at described anti-Answer the gas with various distributed areas of the gas flow guiding part in cavity;
At least one gas conditioner, is connected between described gas diverter and described gas flow guiding part, everyDescribed in one, gas conditioner is for receiving through a wherein road reacting gas of described gas diverter output and by itSplit into many branch roads to export the distribution of gas district corresponding to this road reacting gas on described gas flow guiding part toDifferent subregions in territory, it is many that it comprises that the different subregions in the distribution of gas region corresponding from this are connectedBar gas transmission line, wherein at least one gas transmission line comprise at least three take-off lines in parallel andFlow switch assembly, this flow switch assembly for control the delivery flow rate of each described take-off line and conducting andThe gas flow of cut-off state to regulate this gas transmission line to be carried.
2. air transporting arrangement according to claim 1, is characterized in that, described flow switch assemblyComprise the multiple current limiting elements at least three take-off lines and at least two switch elements described in being arranged at.
3. air transporting arrangement according to claim 2, is characterized in that, described many gas transportsPipeline comprises the first gas transmission line and the second gas transmission line, and described the second gas transmission line comprisesFirst, second, and third take-off line and described flow switch assembly in parallel, described flow switch assembly bagDraw together the first current limiting element of being arranged on described the first take-off line, be arranged on described the second take-off lineSeries connection the second current limiting element and the first switch element and be arranged at the series connection on described the 3rd take-off lineThe 3rd current limiting element and second switch element.
4. air transporting arrangement according to claim 3, is characterized in that, described the first gas transportThe 4th current limiting element is set on pipeline.
5. air transporting arrangement according to claim 3, is characterized in that, described flow switch assemblyAlso comprise the 3rd switch element of connecting with described the first current limiting element being arranged on described the first take-off line.
6. air transporting arrangement according to claim 3, is characterized in that, described gas diverter willReacting gas splits into the two-way reacting gas of first flow and the second flow to export described gas flow guiding part toThe first distribution of gas region and the second distribution of gas region, described gas conditioner is by described the second flowReacting gas splits into the two-way reacting gas of the 3rd flow and the 4th flow to transfer to respectively described the second gasThe first subregion of body distributed areas and the second subregion.
7. air transporting arrangement according to claim 5, is characterized in that, each described current limiting element is equalFor metering hole, each described switch element is switch valve.
8. air transporting arrangement according to claim 7, is characterized in that, the chi of each described metering holeVery little difference.
9. air transporting arrangement according to claim 1, is characterized in that, described gas flow guiding part isGas spray.
10. a plasma processing apparatus, comprises reaction cavity and as described in claim 1～9 any oneAir transporting arrangement.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410608881.5A CN105590825A (en) | 2014-11-03 | 2014-11-03 | Gas conveying apparatus and plasma processing apparatus |
| TW103145591A TWI584341B (en) | 2014-11-03 | 2014-12-25 | Gas delivery device and plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410608881.5A CN105590825A (en) | 2014-11-03 | 2014-11-03 | Gas conveying apparatus and plasma processing apparatus |
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| CN105590825A true CN105590825A (en) | 2016-05-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410608881.5A Pending CN105590825A (en) | 2014-11-03 | 2014-11-03 | Gas conveying apparatus and plasma processing apparatus |
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| CN (1) | CN105590825A (en) |
| TW (1) | TWI584341B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231620A (en) * | 2016-12-15 | 2018-06-29 | 中微半导体设备(上海)有限公司 | A kind of gas flow control device and its flow rate controlling method |
| CN111128812A (en) * | 2020-01-17 | 2020-05-08 | 长江存储科技有限责任公司 | Dry etching device |
| CN113113283A (en) * | 2021-04-08 | 2021-07-13 | 中国科学院光电技术研究所 | Plasma density distribution regulation and control method based on air inlet distribution control |
| CN113445156A (en) * | 2021-05-20 | 2021-09-28 | 北京化工大学 | Pre-oxidized fiber treatment device |
| CN114068272A (en) * | 2020-07-31 | 2022-02-18 | 中微半导体设备(上海)股份有限公司 | Gas flow regulating device and regulating method and plasma processing device |
| CN117038424A (en) * | 2023-10-10 | 2023-11-10 | 深圳市新凯来技术有限公司 | Gas distribution device and semiconductor etching equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1910726A (en) * | 2004-01-12 | 2007-02-07 | 艾克塞利斯技术公司 | Gas distribution plate assembly for plasma reactors |
| US20120132367A1 (en) * | 2010-11-25 | 2012-05-31 | Tokyo Electron Limited | Processing apparatus |
| CN102522303A (en) * | 2011-12-23 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Multi-partition gas conveying apparatus |
| CN103177923A (en) * | 2011-12-20 | 2013-06-26 | 中微半导体设备(上海)有限公司 | Gas distribution system applied to plasma treatment device and verification method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4177192B2 (en) * | 2003-08-05 | 2008-11-05 | 株式会社日立ハイテクノロジーズ | Plasma etching apparatus and plasma etching method |
| US7708859B2 (en) * | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
| US7431859B2 (en) * | 2006-04-28 | 2008-10-07 | Applied Materials, Inc. | Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation |
| DE102007037527B4 (en) * | 2006-11-10 | 2013-05-08 | Schott Ag | Process for coating objects with alternating layers |
-
2014
- 2014-11-03 CN CN201410608881.5A patent/CN105590825A/en active Pending
- 2014-12-25 TW TW103145591A patent/TWI584341B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1910726A (en) * | 2004-01-12 | 2007-02-07 | 艾克塞利斯技术公司 | Gas distribution plate assembly for plasma reactors |
| US20120132367A1 (en) * | 2010-11-25 | 2012-05-31 | Tokyo Electron Limited | Processing apparatus |
| CN103177923A (en) * | 2011-12-20 | 2013-06-26 | 中微半导体设备(上海)有限公司 | Gas distribution system applied to plasma treatment device and verification method thereof |
| CN102522303A (en) * | 2011-12-23 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Multi-partition gas conveying apparatus |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231620A (en) * | 2016-12-15 | 2018-06-29 | 中微半导体设备(上海)有限公司 | A kind of gas flow control device and its flow rate controlling method |
| CN108231620B (en) * | 2016-12-15 | 2021-01-19 | 中微半导体设备(上海)股份有限公司 | Gas flow control device and gas flow control method thereof |
| CN111128812A (en) * | 2020-01-17 | 2020-05-08 | 长江存储科技有限责任公司 | Dry etching device |
| CN114068272A (en) * | 2020-07-31 | 2022-02-18 | 中微半导体设备(上海)股份有限公司 | Gas flow regulating device and regulating method and plasma processing device |
| CN114068272B (en) * | 2020-07-31 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Gas flow regulating device and regulating method and plasma processing device |
| CN113113283A (en) * | 2021-04-08 | 2021-07-13 | 中国科学院光电技术研究所 | Plasma density distribution regulation and control method based on air inlet distribution control |
| CN113445156A (en) * | 2021-05-20 | 2021-09-28 | 北京化工大学 | Pre-oxidized fiber treatment device |
| CN117038424A (en) * | 2023-10-10 | 2023-11-10 | 深圳市新凯来技术有限公司 | Gas distribution device and semiconductor etching equipment |
| CN117038424B (en) * | 2023-10-10 | 2024-01-26 | 深圳市新凯来技术有限公司 | Gas distribution device and semiconductor etching equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201618154A (en) | 2016-05-16 |
| TWI584341B (en) | 2017-05-21 |
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Application publication date: 20160518 |