CN113113283A - Plasma density distribution regulation and control method based on air inlet distribution control - Google Patents
Plasma density distribution regulation and control method based on air inlet distribution control Download PDFInfo
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- CN113113283A CN113113283A CN202110376609.9A CN202110376609A CN113113283A CN 113113283 A CN113113283 A CN 113113283A CN 202110376609 A CN202110376609 A CN 202110376609A CN 113113283 A CN113113283 A CN 113113283A
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- 238000009826 distribution Methods 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 42
- 230000001105 regulatory effect Effects 0.000 claims abstract description 11
- 238000012544 monitoring process Methods 0.000 claims abstract description 8
- 230000001276 controlling effect Effects 0.000 claims abstract description 6
- 230000008859 change Effects 0.000 claims description 13
- 239000000523 sample Substances 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 16
- 230000003287 optical effect Effects 0.000 abstract description 9
- 238000012545 processing Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 210000002381 plasma Anatomy 0.000 description 76
- 238000005070 sampling Methods 0.000 description 30
- 238000005530 etching Methods 0.000 description 9
- 230000007613 environmental effect Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000007599 discharging Methods 0.000 description 3
- 238000005315 distribution function Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000011120 plywood Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32926—Software, data control or modelling
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Abstract
The invention provides a plasma density distribution regulating and controlling method based on air inlet distribution control, which utilizes real-time monitoring feedback of plasma discharge density distribution to regulate and control air inlet flow distribution in real time, thereby regulating and controlling the plasma density distribution and even the plasma discharge state. The invention can accurately regulate and control the plasma discharge state in real time to obtain the required plasma density distribution, or maintain the stable plasma discharge state based on closed-loop control. The regulation principle is simple, the realization is easy, and the method is suitable for uniform removal of plasma in the semiconductor industry or stable removal process of plasma in the field of optical processing.
Description
Technical Field
The invention relates to a plasma density distribution regulating and controlling method based on air inlet distribution control, which can be applied to the fields of semiconductor manufacturing and optical processing.
Background
Plasma discharge removal processes have been widely used in the semiconductor industry. Recently, full aperture immersion plasmas have also been used for optical processing. The stable removal capability of plasma discharge at each point on the surface is necessary no matter the micro-nano structure is uniformly transferred in the semiconductor industry or the surface shape is corrected based on a stable removal function in optical processing. However, the plasma discharge in the vacuum chamber has a certain instability due to the difference of equipment, environment and external control parameters during each discharge, which leads to the strict environmental control and process recipe limitation in the semiconductor industry, and the removal function needs to be measured for many times in the field of optical processing, and a certain degree of uncertainty of the removal function has to be tolerated. These limiting factors reduce the efficiency of plasma discharge removal processes in the semiconductor industry and the optical processing field, increase a large amount of unnecessary cost, and urgently solve the problem of plasma discharge state fluctuation.
The plasma discharge state in the vacuum chamber is mainly determined by the plasma density distribution and the plasma energy distribution together. The plasma energy distribution is mainly determined by the external discharge power, the discharge cavity pressure and the equipment configuration, and the distribution curve is difficult to accurately regulate and control. The plasma density distribution is influenced by the above factors, but is influenced by the flow rate and distribution of the input gas flow, because in the vacuum plasma discharge, the material transport of the plasma depends on the flow field distribution in the vacuum chamber or the diffusion transport. Due to the space-limited nature of fluid movement or diffusion transport, the reactant gases input to the chamber cannot quickly form an equilibrium state, necessitating a transient state; meanwhile, if the gas distribution when being input into the chamber is greatly different from the plasma equilibrium state distribution, the plasma equilibrium state distribution is inevitably moved, and the plasma density distribution is changed. It is clear that the gas distribution as input to the chamber has a certain relationship to the plasma density distribution at the reaction interface. If the plasma density distribution can be regulated, the plasma energy distribution is further taken as a controllable and stable distribution function to be recorded, and the regulation of the plasma discharge state is possible, so that the influence of the plasma discharge state fluctuation on the process production caused by equipment state drift, environmental condition fluctuation and process parameter change is avoided to a certain extent, the environmental compatibility and the discharge stability of the plasma discharge machining are greatly improved, the cost is saved, and the efficiency is improved.
Disclosure of Invention
In order to solve the technical problem, the invention provides a plasma density distribution regulation and control method based on air inlet distribution control, which forms instant regulation and control on air inlet airflow distribution through real-time monitoring and feedback on plasma discharge density distribution, thereby regulating and controlling the plasma density distribution and even the plasma discharge state. The invention can accurately regulate and control the plasma discharge state in real time to obtain the required plasma density distribution, or maintain the stable plasma discharge state based on closed-loop control. The regulation principle is simple, the realization is easy, and the method is suitable for uniform removal of plasma in the semiconductor industry or stable removal process of plasma in the field of optical processing.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a plasma density distribution regulation and control method based on intake distribution control comprises the following steps:
step 1) monitoring plasma density distribution, wherein the plasma is positioned in a vacuum cavity, the vacuum cavity is provided with a porous air inlet device, and the porous air inlet device is provided with a plurality of air inlet holes capable of independently controlling opening and closing degrees;
step 2) adjusting the opening and closing degrees of a plurality of air inlets of the porous air inlet device according to the difference between the monitored plasma density distribution and the required plasma density distribution;
step 3) repeating step 2) until said monitored plasma density profile is adjusted to said desired plasma density profile.
Further, the plasma density distribution monitoring method includes, but is not limited to, a scanning langmuir probe and/or a multipoint langmuir matrix probe.
Furthermore, the opening and closing degree of the plurality of air inlet holes of the porous air inlet device which can be independently controlled is zero to the maximum aperture.
Further, the air inlet adjusting method of the multi-hole air inlet device comprises but is not limited to diameter adjustment of the small holes with variable diameters and/or multi-layer hole dislocation hole diameter adjustment.
Further, the adjustment manner of the air inlet hole of the porous air inlet device comprises but is not limited to electric adjustment and/or manual adjustment.
Furthermore, the adjustment of the opening and closing degree of the plurality of air inlet holes of the porous air inlet device can change the monitored plasma density distribution.
Furthermore, the adjustment of the opening and closing degrees of the plurality of air inlet holes of the porous air inlet device can establish a corresponding relation with the monitored plasma density distribution change.
Furthermore, the opening and closing degrees of the plurality of air inlet holes of the porous air inlet device can establish a corresponding relation with the monitored plasma density distribution.
Further, the plasma density distribution changes, including but not limited to changes in the magnitude of plasma electron number density at various points within the monitoring region.
Further, the monitored plasma density distribution can be fed back in real time and used for guiding the instant adjustment of the opening and closing degrees of the plurality of air inlet holes of the porous air inlet device.
Further, the plasma density distribution regulating method can form a closed loop through software, real-time automatic regulation is carried out on the plasma density distribution, namely the monitored plasma density distribution is fed back to control software, the control software calculates the regulation distribution of the opening and closing degrees of the plurality of air inlets of the porous air inlet device based on the required plasma density distribution which is input in advance, simultaneously sends signals to automatically regulate the opening and closing degrees of the plurality of air inlets of the porous air inlet device in real time, then new plasma density distribution feedback is obtained, and the process is circulated until the required plasma density distribution is obtained.
The invention has the beneficial effects that:
(1) the control on the plasma discharge state mainly depends on the regulation and control on the plasma density distribution, the controllability is high, the real-time closed-loop control can be realized, the dependence of the state control on the equipment state, the environmental condition and the external parameters is separated, the known plasma discharge state can be quickly reached when the equipment is changed, the environment is changed and the process formula is changed, and further, the reasonable plasma discharge process is quickly implemented. The method can reduce the strict requirements of equipment maintenance standard and environmental conditions, thereby saving high equipment and environmental maintenance cost; the complicated equipment re-debugging process and the technological formula test flow are avoided, and a large amount of manpower and material resources are saved.
(2) The maintenance of the plasma discharge state stability depends on the real-time accurate closed-loop control of the plasma discharge density distribution, so that the fluctuation of the etching uniformity in the semiconductor process and the removal of the function stability change in optical processing can be effectively avoided, and the yield and the optical processing efficiency of the semiconductor process are greatly improved.
Drawings
FIG. 1 is a schematic view of a plasma density distribution control device based on inlet gas distribution control.
FIG. 2 is a schematic view of the distribution of pores on the porous air intake device of example 1.
FIG. 3 is a schematic view of the distribution of air holes on the porous air intake device in example 2.
Wherein: 1-a vacuum chamber; 2-a porous air intake device; 3, plasma discharge; 4-langmuir probe matrix; and 5, a computer provided with analysis control software.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
Example 1: the stability of the 600 mm caliber single-frequency capacitive coupling plasma discharge 3 is regulated, and the initial discharge parameters are as follows: discharge cavity pressure 2.0Pa, discharge power 1000W, discharge gas trifluoromethane: oxygen 180Sccm and 30 Sccm. The porous air inlet device 2 is positioned at the top of the vacuum chamber 1, the diameter of the outer edge of the porous air inlet device 2 is 400mm, air flow enters the vacuum chamber 1 from top to bottom, air inlets on the porous air inlet device 2 are distributed as shown in figure 2, 25 air inlets are totally formed, the maximum aperture of each air inlet is 20mm, the distance between every two air inlets is 50mm, the opening and closing degree of each air inlet is controlled by an independently controllable electric control diaphragm, and the initial opening and closing degree is 50% of the maximum aperture. Plasma density was monitored using a langmuir probe matrix 4 with 25 measurement points, which were uniformly distributed in the discharge vacuum chamber 1 in vertical correspondence with the inlet hole locations. The Langmuir probe matrix 4 is connected with a computer 5 which is provided with analysis control software, and feeds back data such as plasma space potential, suspension potential, electron temperature, electron density, ion density, electron energy distribution function and the like of the sampling point in real time.
The specific regulation and control process comprises the following steps:
step 1, carrying out plasma discharge with set parameters in a vacuum chamber, after 10 seconds of discharge, recording 30 electron density sampling distributions within 30 seconds by analysis and control software, calculating the time average mean value of each sampling point and recording the time average mean value as a standard electron density distribution.
And 2, sequentially reducing the opening and closing degree of each air inlet by 10% through analysis and control software, namely reducing the aperture of each air inlet to 40% of the maximum aperture, stably discharging for 10 seconds after the aperture is reduced every time, recording 30 sampling distributions within 30 seconds, and solving the time average mean value of each sampling point and recording.
And 3, sequentially increasing the opening and closing degree of 20 percent of each air inlet, namely expanding the aperture of each air inlet to 60 percent of the maximum aperture, stably discharging for 10 seconds after the aperture is reduced every time, recording 30 sampling distributions within 30 seconds, solving the time average mean value of each sampling point and recording.
And 4, according to the steps 2 and 3, the trend of the change of the electron density numerical values of all sampling points when the opening and closing degree of a certain air inlet hole is adjusted can be known, the change of the sampling points corresponding to the air inlet hole is the largest, and the farther the distance from the air inlet hole is, the smaller the change of the electron density numerical values is.
And 5, repeating the steps 2 and 3, changing the reduction and increase proportion of the opening and closing degree of each air inlet hole and the number of the simultaneously changed air inlet holes, and adding more data in a database of the correspondence between the opening and closing degree distribution of the air inlet holes and the electron density distribution of the plasma.
And 6, closing the equipment to discharge, restarting the equipment to discharge, after 10 seconds of discharge, recording 30 sampling distributions within 30 seconds by analysis and control software, calculating and recording the time average mean value of each sampling point, wherein the plasma electron density distribution at the moment is different from the standard electron density distribution recorded in the step 1, setting the fluctuation of the electron density numerical value of each sampling point to be within an allowable range, comparing the electron density numerical value change of each sampling point in two electron density distributions by the analysis and control software, firstly adjusting the opening and closing degree of an air inlet corresponding to the sampling point with the largest numerical difference, adjusting the amplitude to refer to the data in the database obtained in the step 5, after 10 seconds of stable discharge, recording 30 sampling distributions within 30 seconds, and calculating and recording the time average mean value of each sampling point.
And 7, comparing the adjusted electron density distribution with the electron density numerical value change of each sampling point in the standard electron density distribution in the step 1 by analysis and control software, adjusting the opening and closing degree of the air inlet corresponding to the sampling point with the maximum numerical difference again, referring to the data in the database obtained in the step 5 by the adjustment amplitude, recording 30 sampling distributions within 30 seconds after stable discharge for 10 seconds, and solving and recording the time average mean value of each sampling point.
And 8, repeating the step 7 until the difference value between the monitored electron density value of each sampling point of the plasma density distribution and the sampling point corresponding to the standard electron density distribution is less than 5 percent.
And 9, automatically completing sampling record, sampling analysis, numerical value comparison, air inlet opening and closing degree control and the like in the steps 6, 7 and 8 by analysis control software.
And 10, when the plasma discharge electron density distribution is changed due to equipment state change, environmental condition change or process parameter adjustment, adjusting the monitored plasma discharge electron density distribution to the set standard electron density distribution through the steps 6, 7 and 8.
Example 2: the uniformity of the 1000 mm caliber single-frequency capacitive coupling plasma discharge is regulated, and the initial discharge parameters are as follows: the discharge cavity pressure is 1.5Pa, the discharge power is 2000W, and the discharge gas oxygen is 500 Sccm. Porous air inlet unit is located the vacuum chamber top, porous air inlet unit outer fringe diameter 800mm, the air current from the top gets into the vacuum chamber, the last air pocket of porous air inlet unit distributes as shown in fig. 3, totally 81 inlet ports, the maximum aperture of every inlet port is 40mm, interval between every inlet port is 70mm, the switching degree of every inlet port is controlled by dislocation aperture regulating plate that can independent control, each inlet port comprises the band-pass board of lower floor and the portable band-pass board that corresponds of upper strata, upper and lower two-layer aperture is the same, the portable band-pass board of each upper strata can independent horizontal migration, the range of movement is that the plywood is covered two-layer hole complete coincidence about the upper and lower completely down, initial switching degree is 50% maximum aperture. The plasma density was monitored using a scanning Langmuir probe with a minimum scan time interval of 12.5ns, a trigger frequency of 1MHz maximum, a minimum step size of 0.025mm, and a scan range covering the entire vacuum chamber. The Langmuir probe is connected with a computer provided with analysis control software, and feeds back data such as plasma space potential, suspension potential, electron temperature, electron density, ion density, electron energy distribution function and the like obtained by scanning in real time.
The specific regulation and control process comprises the following steps:
and 21, carrying out plasma discharge with set parameters in the vacuum chamber, after discharging for 30 seconds, scanning the whole vacuum chamber by using the scanning type Langmuir probe and feeding back data in real time, recording 20 electron density sampling distributions within 600 seconds by using analysis control software, calculating a time average mean value of each sampling point and fitting the time average mean value to the initial electron density distribution corresponding to a horizontal plane.
And step 22, observing the initial electron density distribution obtained by monitoring, selecting an area with a numerical value deviating from the average value of all data, manually adjusting the aperture size of an air inlet hole corresponding to the area on the air inlet device, reducing the aperture if the electron density numerical value is larger, increasing the aperture if the electron density numerical value is smaller, performing scanning measurement on the electron density numerical value of the whole vacuum chamber again after the adjustment is finished, recording 20 electron density sampling distributions within 600 seconds, calculating the time average value of each sampling point and fitting the time average value to the initial electron density distribution corresponding to the horizontal plane.
And 23, repeating the step 22 until the measured numerical nonuniformity of the electron density distribution of the whole vacuum chamber is less than 5%.
And 24, etching the sample in the adjusted plasma state, measuring the etching depth of each point on the sample by using a step profiler, a white light contourgraph and the like, and calculating the full-aperture etching nonuniformity.
And 25, carrying out one-to-one correspondence on the actually measured etching depth of each point with the aperture size of the air inlet at the corresponding position, readjusting the aperture of the corresponding air inlet according to the deviation degree of the etching depth of each point and the mean value of the etching depth, reducing the corresponding aperture if the depth is larger, increasing the corresponding aperture if the depth is smaller, determining the amplitude of the increase or reduction of the aperture of the air inlet according to the deviation degree of the etching depth and the mean value of the point, increasing the aperture adjustment amplitude if the deviation is larger, carrying out scanning measurement on the electron density numerical value of the whole vacuum chamber after the adjustment is finished, recording 20 electron density sampling distributions within 600 seconds, recording the time mean value of each sampling point and fitting the electron density distribution corresponding to a horizontal plane.
And 26, repeating the step 24 and the step 25 until the etching depth nonuniformity of each point on the sample is less than 5 percent, and finishing the uniformity regulation and control of the plasma discharge.
It is to be understood that the above examples are illustrative only for the purpose of clarity of description and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the spirit or scope of the invention.
Claims (10)
1. A plasma density distribution regulation and control method based on air inlet distribution control is characterized in that: the method comprises the following steps:
step 1) monitoring plasma density distribution, wherein the plasma is positioned in a vacuum cavity, the vacuum cavity is provided with a porous air inlet device, and the porous air inlet device is provided with a plurality of air inlet holes capable of independently controlling opening and closing degrees;
step 2) adjusting the opening and closing degrees of a plurality of air inlets of the porous air inlet device according to the difference between the monitored plasma density distribution and the required plasma density distribution;
step 3) repeating step 2) until said monitored plasma density profile is adjusted to said desired plasma density profile.
2. The plasma density distribution control method based on the gas inlet distribution control as claimed in claim 1, wherein: the monitoring method of the plasma density distribution comprises but is not limited to a scanning Langmuir probe and/or a multipoint matrix Langmuir probe.
3. The plasma density distribution control method based on the gas inlet distribution control as claimed in claim 1, wherein: the opening and closing degree of a plurality of air inlets of the porous air inlet device which can be independently controlled is zero to the maximum aperture.
4. The plasma density distribution control method based on the gas inlet distribution control as claimed in claim 1, wherein: the air inlet adjusting method of the porous air inlet device comprises but is not limited to diameter adjustment of the small holes with variable diameters and/or multi-layer hole dislocation pore size adjustment.
5. The plasma density distribution control method based on the gas inlet distribution control as claimed in claim 1, wherein: the adjustment mode of the air inlet hole of the porous air inlet device comprises but is not limited to electric adjustment and/or manual adjustment.
6. The plasma density distribution control method based on the gas inlet distribution control as claimed in claim 1, wherein: the adjustment of the opening and closing degrees of a plurality of air inlet holes of the porous air inlet device can change the monitored plasma density distribution.
7. The plasma density distribution control method based on the gas inlet distribution control as claimed in claim 1, wherein: the adjustment of the opening and closing degrees of the plurality of air inlet holes of the porous air inlet device can establish a corresponding relation with the monitored plasma density distribution change.
8. The plasma density distribution control method based on the gas inlet distribution control as claimed in claim 1, wherein: the opening and closing degrees of a plurality of air inlet holes of the porous air inlet device can establish a corresponding relation with the monitored plasma density distribution.
9. The plasma density distribution control method based on the gas inlet distribution control as claimed in claim 1, wherein: the plasma density distribution changes, including but not limited to changes in the number density of plasma electrons at various points within the monitored region.
10. The plasma density distribution control method based on the gas inlet distribution control as claimed in claim 1, wherein: the monitored plasma density distribution can be fed back in real time and is used for guiding the real-time adjustment of the opening and closing degrees of a plurality of air inlet holes of the porous air inlet device; the plasma density distribution regulating method can form a closed loop through software, automatically regulates the plasma density distribution in real time, namely the monitored plasma density distribution is fed back to control software, the control software calculates the regulating distribution of the opening and closing degrees of a plurality of air inlets of the porous air inlet device based on the required plasma density distribution which is input in advance, sends signals to automatically regulate the opening and closing degrees of the plurality of air inlets of the porous air inlet device in real time at the same time, then obtains new plasma density distribution feedback, and circulates in such a way until the required plasma density distribution is obtained.
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Application publication date: 20210713 |