CN100377301C

CN100377301C - Gas injection and diffusion system

Info

Publication number: CN100377301C
Application number: CNB2005101263787A
Authority: CN
Inventors: 王志升
Original assignee: Beijing North Microelectronics Co Ltd
Current assignee: Beijing North Microelectronics Co Ltd
Priority date: 2005-12-08
Filing date: 2005-12-08
Publication date: 2008-03-26
Anticipated expiration: 2025-12-08
Also published as: CN1851858A

Abstract

The present invention relates to a system for injecting and diffusing gas to a semiconductor machining cavity in semiconductor machining course, which comprises a vacuum plate hermetically arranged on a reaction cavity and a nozzle hermetically connected with the vacuum plate, wherein the nozzle passes through a hollow rotating shaft of a micromotor which is firmly connected with the vacuum plate. The end of a vacuum rotating shaft is provided with at least one diffuser on which gas outlets are distributed. The system changes the traditional gas injecting and diffusing method of the semiconductor etching device and improves the gas distribution and uniformity. The movable diffusion of the gas causes the speed inclining to the uniformity to be high, which is in favor of obtaining more similar etching speed rate from each point on the surface of a wafer. Moreover, an injection gas path is not complex. As the continuous increase of the wafer size, the advantage of the technical scheme can be embodied.

Description

Gas injects and diffusion system

Technical field

The present invention relates to, the present invention relates generally to the system of the gaseous material that is used to distribute, relate more specifically to the indoor injection of semiconductor processing chamber and spread the more system of uniform gas.

Background technology

In semiconductor plants, activate the material of the plasma etching wafer surface that produces by the process gas that enters reaction chamber.In the semiconductor machining chamber interior, the heterogeneity distribution of gas will cause etch rate and the uniformity on the wafer surface of chamber interior that bigger variation is arranged.And at present along with technological progress.The volume of reaction chamber also increases accordingly, and this makes distribution of gas difficulty more is provided to provide more uniformly, therefore because the heterogeneity of distribution of gas, from the central authorities of wafer to around etch rate and uniformity very big variation is arranged.

Figure 1 shows that one of process gas injected system that adopts in the conventional semiconductor etching apparatus.The gas fill assembly of this system is structure ringwise, comprise an enclosure space main body, wherein form at least one enclosure space 42 and a plurality of gas nozzle 34, one pipeline configuration extends between enclosure space and the nozzle, and gaseous matter injects process chamber 12 along a circuitous channel by enclosure space and nozzle.After the gas injecting chamber of this equipment, diffusion velocity is fast inadequately, and transmission pipeline and nozzle are too much, and it is too complicated to cause injecting gas circuit, the difficulty that causes processing and safeguard.

Figure 2 shows that the another kind of process gas injected system that adopts in the conventional semiconductor etching apparatus.This identical nozzle mainly is distributed in two zones of plasma process chamber: top central area and surrounding zone, can realize regulating and controlling to the gas release zone, wherein, gas vent 226 is the top central area of source gas supply plasma process chamber 202, and source gas is supplied with in the surrounding zone of plasma process chamber 202 in outlet 228.After the gas injecting chamber of same this equipment, diffusion velocity is fast inadequately, and transmission pipeline and nozzle are too much, and it is too complicated to cause injecting gas circuit, the difficulty that causes processing and safeguard.

Summary of the invention

(1) technical problem that will solve

The objective of the invention is at above-mentioned the deficiencies in the prior art, provide a kind of gas that on the material surface that is etched, obtains uniform etch rate gas to inject and diffusion system.

(2) technical scheme

For achieving the above object, the present invention adopts following technical scheme:

Gas of the present invention injects and diffusion system, comprise that sealing is installed in the evacuated panel on the reaction chamber, seal the nozzle that joins with evacuated panel, this nozzle passes the hollow rotating shaft of the micromachine that firmly connects with evacuated panel 3, the end of vacuum rotating shaft has at least one anemostat, is distributed with venthole on anemostat.

Described venthole is cylindrical, conical, square or oval.

Described anemostat and rotating shaft are made one or both and are divided into two sports associations and are connected together.

Described anemostat is two when above, the distributing position of venthole is that the hole between each pipe is held cross-distribution outward or taked a hole on the pipe that the mode that the inside and outside distribution of the end setting that the hole on the adjacent tubes is far away in the decentre hole combines is set near the center from the center.

(3) beneficial effect

Gas of the present invention injects and diffusion system has changed traditional gas injection and the diffusion way of semiconductor etching device, improved the uniformity of distribution of gas, the moving diffusion of gas makes the inhomogeneity speed of trend faster, thereby helps to obtain on the each point of wafer surface more close etch rate.And it is also uncomplicated to inject gas circuit.Along with the continuous increase of later wafer size, the superiority of the technical program will can be embodied more.

Description of drawings

Fig. 1 is the structural representation of gas injection of the present invention and diffusion system;

Fig. 2 is the distribution form figure of the anemostat venthole of system shown in Figure 1;

Fig. 3 is the another kind of distribution form figure of the anemostat venthole of system shown in Figure 1;

Fig. 4 is a kind of prior art constructions figure;

Fig. 5 is another kind of prior art constructions figure.

Among the figure: 1. reaction chamber; 2. anemostat; 2-1. anemostat A; 2-2. anemostat B; 3. evacuated panel; 4. nozzle; 5. micromachine; 6. gas access; 7. rotating shaft; 8. venthole.

Below in conjunction with accompanying drawing, further describe that gas of the present invention injects and the embodiment of diffusion system, but be not used for limiting protection scope of the present invention.

Embodiment

Referring to Fig. 1, gas of the present invention injects and diffusion system, comprise the evacuated panel of installing with reaction chamber 1 sealing 3, seal the nozzle 4 that joins with evacuated panel 3, this nozzle passes the hollow rotating shaft 7 of the micromachine 5 that firmly connects with evacuated panel 3, and the end of vacuum rotating shaft has at least one anemostat 2.On anemostat, be distributed with venthole 8.

During work, gas is from entering the mouth 6 through nozzle 4 and anemostat 2, enter reaction chamber 1 from venthole 8, at the same time, anemostat 2 is under the drive of micromachine 5, not stall around the shaft is moving, each venthole 8 just can be realized the annular injection of gas like this, integral body is exactly that gas on the face parallel with wafer injects, and gas not only has a downward initial velocity when entering reaction chamber, and also has a horizontal tangential velocity, and this just can impel gas to strengthen at the volley spreading, not only speed is fast, and more even.

The quantity of described venthole is determined according to distribution of gas uniformity, chamber and anemostat size etc. jointly mostly to be good.Pitch-row on same anemostat equates that its shape can be cylindrical, conical, square or ellipse etc.

Described anemostat can be made into integration with rotating shaft, also can be for two sports associations are connected in the rotating shaft, and perhaps pipe and between centers add the switching device of bull.The quantity of anemostat can be one or more, and best a plurality of combinations are determined jointly according to distribution of gas uniformity, chamber size and power of motor etc.

Though owing to the distance of each venthole on the anemostat 2 and nozzle 4 has far and near difference to cause the difference of specific gas flow rate, and each hole is also different in horizontal area coverage, but a tangential velocity is arranged when entering chamber because of gas, make gas to diffusion all around, can impel gas even in the distribution trend at chamber central authorities and edge.And motor speed is controlled, can reach by the adjusting rotating speed to improve the inhomogeneity purpose of gas.

When adopting many anemostats structure, on the distributing position of venthole, can adopt between each pipe the therefrom mode of mind-set outer end cross-distribution, can play the effect of diffusion area complementation, distribution of gas is more even, as shown in Figure 2, the venthole position of the venthole position of anemostat A2.1 and anemostat B2.2 is staggered complementary.Wherein, relative mountain peak structure can make gas shunt better below nozzle.

The position of each venthole 8 also can adopt inside and outside distribution as shown in Figure 3 to combine, and promptly the hole on pipe is provided with near the center, the inside and outside distribution that the end far away in the decentre hole of the hole on the adjacent tubes is provided with.Among Fig. 3, the pore size distribution on the anemostat A is in fringe region, and the pore size distribution on the anemostat B can make the distribution of gas between central authorities and the fringe region more even in central near zone like this.

Add man-hour carrying out plasma etching, in order on the material surface that is etched, to obtain more uniform etch rate, just need above the reaction chamber internal wafer, obtain relatively reative cell distribution of gas uniformly, and the performance of gas injection system has directly and significant effects to the uniformity of distribution of gas.Technical solutions according to the invention can be after gaseous matter injecting chamber, and diffusion reaches equally distributed purpose rapidly, and it is simple and reliable to inject gas circuit, is convenient to processing.

Technical solutions according to the invention can also be arranged at anemostat density transversely by changing each venthole, and change each venthole in anemostat big minispread transversely etc., improve the uniformity of distribution of gas.Also can be slotted on anemostat, arrange by the shape, the size that change slit, or make its intersection or inside and outside distribution under the multitube structure, realize that the gross area of gaseous matter evenly injects.

More than be preferred forms of the present invention, according to content disclosed by the invention, some identical, replacement schemes that those of ordinary skill in the art can expect apparently all should fall into the scope of protection of the invention.

Claims

1. gas injects and diffusion system, it is characterized in that comprising that sealing is installed in the evacuated panel (3) on the reaction chamber (1), seal the nozzle (4) that joins with evacuated panel (3), this nozzle passes the hollow rotating shaft (7) of the micromachine (5) that firmly connects with evacuated panel (3), the end of vacuum rotating shaft has at least one anemostat (2), on anemostat, be distributed with venthole (8), and in the middle of anemostat, have a mountain peak structure relative with nozzle.

2. system according to claim 1 is characterized in that described venthole (8) is cylindrical, conical, square or oval.

3. system according to claim 1 and 2 is characterized in that described anemostat and rotating shaft make one or both and be divided into two sports associations and be connected together.

4. system according to claim 1 and 2, it is characterized in that described anemostat (2) is two when above, the distributing position of venthole is that the hole between each pipe is held cross-distribution outward or taked a hole on the pipe that the mode that the inside and outside distribution of the end setting that the hole on the adjacent tubes is far away in the decentre hole combines is set near the center from the center.

5. system according to claim 3, it is characterized in that described anemostat (2) is two when above, the distributing position of venthole be hole between each pipe from the center cross-distribution or take a hole on the pipe that the mode that the inside and outside distribution of the end setting that the hole on the adjacent tubes is far away in the decentre hole combines is set near the center outward.