CN105845536A - Plasma high efficiency etching machine - Google Patents
Plasma high efficiency etching machine Download PDFInfo
- Publication number
- CN105845536A CN105845536A CN201610315819.6A CN201610315819A CN105845536A CN 105845536 A CN105845536 A CN 105845536A CN 201610315819 A CN201610315819 A CN 201610315819A CN 105845536 A CN105845536 A CN 105845536A
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- CN
- China
- Prior art keywords
- gas outlet
- air
- electrostatic absorption
- high pressure
- air flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a plasma high efficiency etching machine comprising a reaction chamber body and a molecular pump. A plurality of high pressure gas nozzles are fixedly arranged on a top end of the reaction chamber body, and a bottom part of the reaction chamber body is provided with the molecular pump; an electrostatic absorption disc, an absorption member and a plurality of air flow adjusting devices are arranged in the reaction chamber body; two ends of the electrostatic absorption disc are mounted on an inner wall of the reaction chamber body in a movable manner via the absorption member, and each of upper and lower ends of the electrostatic absorption disc is provided with the plurality of air flow adjusting devices. The plasma high efficiency etching machine is simple in structure principle, the plurality of air flow adjusting devices are adopted, air flows in the reaction chamber body can be rapidly adjusted, etching uniformity can be ensured, high pressure gas can be sprayed uniformly via the high pressure gas nozzles, the etching uniformity can be further improved, and a qualified product rate can be raised.
Description
Technical field
The present invention relates to photovoltaic lithographic technique field, be specially a kind of efficient etching machine of plasma.
Background technology
Plasma etching, is modal a kind of form in dry etching, and its principle is to be exposed to the gas of electronics regions
Body formed plasma, consequent ionized gas and release high energy electron composition gas, thus define plasma or
Ion, when ionized gas atom is by electric field acceleration, can discharge enough strength and surface expulsion power tightly jointing material or erosion
Carve surface.
China Patent No. " 201310597934.3 " discloses a kind of plasma etch apparatus, has an advantage in that: pass through
Existing cantilever increases a number of through hole, adds the uniformity of gas, thus it is inclined to improve local air flow speed
Slow present situation, and then avoid the inhomogeneities of the etch rate of crystal column surface, and finally improve the yield of product；It is not enough
Part is: only increase a number of through hole, is improving DeGrain on gas homogeneity, and is spraying into from nozzle
Gas flow rate in reaction cavity is uneven, causes product yield low.
Summary of the invention
It is an object of the invention to provide a kind of efficient etching machine of plasma, with asking of solving to propose in above-mentioned background technology
Topic.
For achieving the above object, the present invention provides following technical scheme: a kind of efficient etching machine of plasma, including reaction
Cavity and molecular pump, the top of described reaction cavity is fixed with multiple gases at high pressure nozzle, in the bottom of described reaction cavity
It is provided with molecular pump, is provided with Electrostatic Absorption dish, adsorption piece and multiple air flow regulator in the inside of described reaction cavity, described
Electrostatic Absorption dish two ends are movably arranged on the inwall of reaction cavity by adsorption piece, and the upper and lower side at described Electrostatic Absorption dish is all provided with
It is equipped with multiple air flow regulator.
Preferably, described gases at high pressure nozzle includes skull and base, and the cooperation face of described skull and base offsets, described
Base be axially equipped with the first gas outlet, be provided with the second gas outlet, the footpath of described base in the side of described first gas outlet
To being provided with the 3rd gas outlet, and described second gas outlet and the 3rd gas outlet communicate, and described skull is provided with hole, sets in described hole
There is the needle point that base is provided with.
Preferably, described air flow regulator includes current stabilization body, air inlet, honeycomb sheet, air doctor, gas outlet and mistake
Filter disc, one end of described current stabilization body is provided with air inlet, and the other end of described current stabilization body is provided with gas outlet, the inside of described current stabilization body
Being provided with honeycomb sheet, air doctor, described honeycomb sheet is positioned at one end of air inlet, and described honeycomb sheet connects air doctor, institute
The outlet stating air doctor connects gas outlet by filter, includes that multiple air-flow regulates grid in described air doctor,
And described air-flow regulation grid is tapered.
Preferably, described air flow regulator arranges 4-8, and the air-flow regulation dress of the upper and lower side of described Electrostatic Absorption dish
Put quantity consistent.
Preferably, its using method comprises the following steps:
A, silicon chip to be etched is placed on the upper surface of Electrostatic Absorption dish, opens multiple gases at high pressure nozzle the most respectively；
B, gases at high pressure pass through multiple air flow regulator regulating flow-stabilizings above Electrostatic Absorption dish in entering reaction cavity, make current stabilization
After gas uniformly bombard the surface molecular of the material that is etched；
C, gases at high pressure are by multiple air flow regulators regulating flow-stabilizing again below Electrostatic Absorption dish, in making whole reaction chamber
Gas is current stabilization state；
D, reacted volatile gas are by outside molecular pump extraction cavity.
Compared with prior art, the invention has the beneficial effects as follows:
(1) present configuration principle is simple, uses multiple air flow regulator, it is possible to the quickly air-flow in regulation reaction cavity,
Guarantee the uniformity of etching, and in air flow regulator, air doctor uses conical flow regulation grid, it is possible to air-flow
Play guide effect.
(2) the gases at high pressure nozzle that the present invention uses, it is possible to uniformly spray gases at high pressure, improves the uniform of etching further
Property, improve conforming product rate.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of the present invention；
Fig. 2 is the gases at high pressure nozzle arrangements schematic diagram of the present invention；
Fig. 3 is the air flow regulator structural representation of the present invention；
In figure: 1, reaction cavity；2, molecular pump；3, gases at high pressure nozzle；4, Electrostatic Absorption dish；5, adsorption piece；6, air-flow regulation
Device；7, skull；8, base；9, the first gas outlet；10, the second gas outlet；11, the 3rd gas outlet；12, hole；13, needle point；14、
Current stabilization body；15, air inlet；16, honeycomb sheet；17, air doctor；18, gas outlet；19, filter；20, air-flow regulation grid.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
Referring to Fig. 1-3, the present invention provides a kind of technical scheme: a kind of efficient etching machine of plasma, including reaction cavity
1 and molecular pump 2, the top of reaction cavity 1 is fixed with multiple gases at high pressure nozzle 3, is provided with molecule in the bottom of reaction cavity 1
Pump 2, is provided with Electrostatic Absorption dish 4, adsorption piece 5 and multiple air flow regulator 6, Electrostatic Absorption dish 4 in the inside of reaction cavity 1
Two ends are movably arranged on the inwall of reaction cavity 1 by adsorption piece 5, and the upper and lower side at Electrostatic Absorption dish 4 is provided with multiple gas
Flow modulation device 6., air flow regulator 6 arranges 4-8, and the air flow regulator 6 of the upper and lower side of described Electrostatic Absorption dish 4
Quantity is consistent.
In the present embodiment, gases at high pressure nozzle 3 includes skull 7 and base 8, and the cooperation face of skull 7 and base 8 offsets, the end
Seat 8 be axially equipped with the first gas outlet 9, be provided with the second gas outlet 10 in the side of the first gas outlet 9, the radial direction of base 8 sets
Having the 3rd gas outlet 11, and the second gas outlet 10 and the 3rd gas outlet 11 communicate, skull 7 is provided with hole 12, is provided with the end in hole 12
The needle point 13 that seat 8 is provided with, the gases at high pressure nozzle that the present invention uses, it is possible to uniformly spray gases at high pressure, improve quarter further
The uniformity of erosion, improves conforming product rate.
In the present embodiment, air flow regulator 6 include current stabilization body 14, air inlet 15, honeycomb sheet 16, air doctor 17,
Gas outlet 18 and filter 19, one end of current stabilization body 14 is provided with air inlet 15, and the other end of current stabilization body 14 is provided with gas outlet 18, surely
The inside of fluid 14 is provided with honeycomb sheet 16, air doctor 17, and honeycomb sheet 16 is positioned at one end of air inlet 15, and honeycomb sheet 16 connects
Air doctor 17, the outlet of air doctor 17 connects gas outlet 18 by filter 19, includes many in air doctor 17
Individual air-flow regulation grid 20, and air-flow regulation grid 20 is tapered.Gas, after air inlet enters, realizes reducing by honeycomb sheet
The speed of gas, gas realizes voltage stabilizing by air doctor and flows, and in air flow regulator, air doctor uses cone
Shape air-flow regulation grid, it is possible to air-flow is played guide effect, it is ensured that the uniformity of etching
The using method of the present invention comprises the following steps:
A, silicon chip to be etched is placed on the upper surface of Electrostatic Absorption dish 4, opens multiple gases at high pressure nozzle 3 the most respectively；
B, gases at high pressure pass through multiple air flow regulator 6 regulating flow-stabilizings above Electrostatic Absorption dish 4 in entering reaction cavity 1, make
Gas after current stabilization uniformly bombards the surface molecular of the material that is etched；
C, gases at high pressure, by multiple air flow regulator 6 regulating flow-stabilizings again below Electrostatic Absorption dish 4, make whole reaction cavity
Gas in 1 is current stabilization state；
D, reacted volatile gas are by outside molecular pump 2 extraction cavity 1.
Every technical staff's notice: although the present invention describes according to above-mentioned detailed description of the invention, but the present invention
Invention thought be not limited to that invention, the repacking of any utilization inventive concept, all will include this patent protection of the patent right in
In the range of.
Claims (5)
1. the efficient etching machine of plasma, including reaction cavity (1) and molecular pump (2), it is characterised in that: described reaction chamber
The top of body (1) is fixed with multiple gases at high pressure nozzle (3), is provided with molecular pump (2) in the bottom of described reaction cavity (1),
Electrostatic Absorption dish (4), adsorption piece (5) and multiple air flow regulator (6), institute it is provided with in the inside of described reaction cavity (1)
State Electrostatic Absorption dish (4) two ends and be movably arranged on the inwall of reaction cavity (1) by adsorption piece (5), at described Electrostatic Absorption dish
(4) upper and lower side is provided with multiple air flow regulator (6).
A kind of efficient etching machine of plasma the most according to claim 1, it is characterised in that: described gases at high pressure nozzle (3)
Including skull (7) and base (8), the cooperation face of described skull (7) and base (8) offsets, being axially equipped with of described base (8)
First gas outlet (9), is provided with the second gas outlet (10) in the side of described first gas outlet (9), and the radial direction of described base (8) sets
Having the 3rd gas outlet (11), and described second gas outlet (10) and the 3rd gas outlet (11) communicate, described skull (7) is provided with hole
(12), the needle point (13) that base (8) is provided with it is provided with in described hole (12).
A kind of efficient etching machine of plasma the most according to claim 1, it is characterised in that: described air flow regulator (6)
Including current stabilization body (14), air inlet (15), honeycomb sheet (16), air doctor (17), gas outlet (18) and filter (19), institute
The one end stating current stabilization body (14) is provided with air inlet (20), and the other end of described current stabilization body (14) is provided with gas outlet (18), described surely
The inside of fluid (14) is provided with honeycomb sheet (16), air doctor (17), and described honeycomb sheet (16) is positioned at the one of air inlet (15)
End, described honeycomb sheet (16) connects air doctor (17), and the outlet of described air doctor (17) is by filter (19) even
Pick out QI KOU (18), in described air doctor (17), include multiple air-flow regulation grid (20), and described air-flow regulation grid
(20) tapered.
A kind of efficient etching machine of plasma the most according to claim 1, it is characterised in that: described air flow regulator (6)
Arrange 4-8, and air flow regulator (6) quantity of the upper and lower side of described Electrostatic Absorption dish (4) is consistent.
A kind of efficient etching machine of plasma the most according to claim 1, it is characterised in that: its using method includes following step
Rapid:
A, silicon chip to be etched is placed on the upper surface of Electrostatic Absorption dish (4), opens multiple gases at high pressure nozzle the most respectively
(3)；
B, gases at high pressure are steady by Electrostatic Absorption dish (4) the multiple air flow regulators in top (6) regulation in entering reaction cavity (1)
Stream, makes the gas after current stabilization uniformly bombard the surface molecular of the material that is etched；
C, gases at high pressure, by Electrostatic Absorption dish (4) lower section multiple air flow regulators (6) regulating flow-stabilizing again, make whole reaction
Gas in cavity (1) is current stabilization state；
D, reacted volatile gas are by molecular pump (2) extraction cavity (1) outward.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610315819.6A CN105845536A (en) | 2016-05-12 | 2016-05-12 | Plasma high efficiency etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610315819.6A CN105845536A (en) | 2016-05-12 | 2016-05-12 | Plasma high efficiency etching machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105845536A true CN105845536A (en) | 2016-08-10 |
Family
ID=56591746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610315819.6A Pending CN105845536A (en) | 2016-05-12 | 2016-05-12 | Plasma high efficiency etching machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105845536A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114256051A (en) * | 2021-12-20 | 2022-03-29 | 南京威登等离子科技设备有限公司 | Flat nozzle plasma surface treatment equipment |
| CN115666005A (en) * | 2022-12-15 | 2023-01-31 | 赛福仪器承德有限公司 | Plasma etching machine |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61147529A (en) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | Dry etching device of semiconductor wafer |
| CN101179022A (en) * | 2006-11-10 | 2008-05-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection apparatus |
| CN103646841A (en) * | 2013-11-22 | 2014-03-19 | 上海华力微电子有限公司 | A plasma etching device |
| CN205119070U (en) * | 2015-09-25 | 2016-03-30 | 山东浩泰天然气股份有限公司 | Leading integrity current stabilizer of combustor |
| CN205645753U (en) * | 2016-05-12 | 2016-10-12 | 温州海旭科技有限公司 | High -efficient sculpture machine of plasma |
-
2016
- 2016-05-12 CN CN201610315819.6A patent/CN105845536A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61147529A (en) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | Dry etching device of semiconductor wafer |
| CN101179022A (en) * | 2006-11-10 | 2008-05-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas injection apparatus |
| CN103646841A (en) * | 2013-11-22 | 2014-03-19 | 上海华力微电子有限公司 | A plasma etching device |
| CN205119070U (en) * | 2015-09-25 | 2016-03-30 | 山东浩泰天然气股份有限公司 | Leading integrity current stabilizer of combustor |
| CN205645753U (en) * | 2016-05-12 | 2016-10-12 | 温州海旭科技有限公司 | High -efficient sculpture machine of plasma |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114256051A (en) * | 2021-12-20 | 2022-03-29 | 南京威登等离子科技设备有限公司 | Flat nozzle plasma surface treatment equipment |
| CN115666005A (en) * | 2022-12-15 | 2023-01-31 | 赛福仪器承德有限公司 | Plasma etching machine |
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Application publication date: 20160810 |