CN107452591A - A kind of system and method for reducing process cavity particle - Google Patents
A kind of system and method for reducing process cavity particle Download PDFInfo
- Publication number
- CN107452591A CN107452591A CN201710379454.8A CN201710379454A CN107452591A CN 107452591 A CN107452591 A CN 107452591A CN 201710379454 A CN201710379454 A CN 201710379454A CN 107452591 A CN107452591 A CN 107452591A
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- Prior art keywords
- process cavity
- thimble
- gas
- particle
- reducing process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
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- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention discloses a kind of system for reducing process cavity particle, including：Gas passage, in process cavity thimble structure, import purge gas；And air jet system, it is connected with the gas passage, gas is closely injected in lower electrode surface.Because air jet system is close to lower electrode surface, easily larger air-flow is produced in wafer surface, therefore the power of purging is bigger, so as to more efficiently decrease or even eliminate process cavity particle, particularly lower electrode surface particle, it can substantially reduce to remove the number that electrode surface particle is opened reaction chamber and safeguarded, improve the uptime of board.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to a kind of system and method for reducing process cavity particle.
Background technology
In semiconductor processing, progress plasma cleaning process is usually needed between a collection of chip or a wafer, with dimension
Cavity environment stabilization is held, improves the repeatability of technique, stability and yields.Such as in plasma etching industrial, due to wait from
The reaction of bombardment and process gas and wafer surface material of the daughter to silicon chip surface often produces some process byproducts,
Such as polymer, chamber inner wall surface is attached to.In order to remove the process byproducts as caused by etching technics, the method applied at present
It is the etching spaces before and after the etching of chip, per wafer, and before a collection of chip starts etching, carries out dry method cleaning
(dry clean), such as uses SF6, O2Plasma Deng process gas chemically reacts with product containing Si and organic polymer,
Generation gaseous products are extracted chamber, so as to reach the purpose of cleaning chamber.
Currently in order to take into account production efficiency and manufacturing cost, bottom electrode (pedestal) is exposed during general dry method wash chamber
, be partly attached on chamber top or the accessory substance of side wall, due to combine it is insecure be possible to fall down, because Action of Gravity Field has very much
It may drop and form particle on bottom electrode (pedestal) surface, when next group processed wafer is passed to cavity, due to the particle at the back side
The contact condition of chip and bottom electrode (pedestal) can be influenceed and influence process results.Figure 1 illustrates the grade of prior art from
Sub- etching cavity cleaning schematic diagram.Therefore it is badly in need of a kind of new technology to reduce the particle in cavity, can particularly has
Effect elimination falls in bottom electrode (pedestal) surface particles.
The content of the invention
In order to solve the above problems, the present invention discloses a kind of system and method for reducing process cavity particle.The reduction work
The system of skill cavity particle includes：Gas passage, in process cavity thimble structure, import purge gas；And jet dress
Put, be connected with the gas passage, gas is closely injected in lower electrode surface.
In the system of the reduction process cavity particle of the present invention, it is preferably, the thimble structure includes thimble and thimble base
Seat, the air inlet of the gas passage are arranged on the thimble pedestal.
It is preferably that the air jet system is arranged on the thimble in the system of the reduction process cavity particle of the present invention.
In the system of the reduction process cavity particle of the present invention, it is preferably, the air jet system is to be arranged on the thimble
The air jetting holes on top.
In the system of the reduction process cavity particle of the present invention, it is preferably, when lifting the thimble, the air jetting holes
Position is parallel or slightly above described lower electrode surface.
In the system of the reduction process cavity particle of the present invention, it is preferably, the air jetting holes are 4~8, a diameter of
0.01mm~0.2mm.
The present invention reduction process cavity particle system in, be preferably, the gas injection apparatus be arranged on it is described under
Electrode surface.
Invention additionally discloses a kind of method for reducing process cavity particle, comprise the following steps：Dry method cleaning step, to work
Skill chamber carries out plasma dry cleaning；And purge step, thimble is lifted, is closely sprayed purge gas by air jet system
Penetrate in lower electrode surface, lower electrode surface is purged.
In the method for the reduction process cavity particle of the present invention, it is preferably, the purge gas is that argon gas, helium etc. are lazy
Property gas, or nitrogen, can also be O2Or the reacting gas such as F bases.
The present invention reduction process cavity particle method in, be preferably, the purge gas flow be 20sccm~
5000sccm, air pressure are 5mT~100mT, and purge time is 5s~120s.
In the method for the reduction process cavity particle of the present invention, by setting gas passage in thimble, and under near
Air jet system is installed at electrode (pedestal) surface, larger air-flow is produced in wafer surface, therefore the power purged is bigger, so as to
It is enough more efficiently to decrease or even eliminate process cavity particle, particularly lower electrode surface particle.It can substantially reduce to remove
Electrode surface particle and open the number that reaction chamber is safeguarded, improve the uptime of board
Brief description of the drawings
Fig. 1 is the plasma etching cavity cleaning schematic diagram of prior art.
Fig. 2 is the cross-sectional view of the embodiment for the system for reducing process cavity particle.
Fig. 3 is the flow chart of the embodiment for the method for reducing process cavity particle.
Fig. 4 is the schematic diagram in each stage of the embodiment for the method for reducing process cavity particle：(a) etching technics ring
Section, (b) takes blade technolgy link, (c) dry method cleaning link (d) purging process link.
Reference
1~gas passage；11~air inlet；2~thimble structure；21~thimble；22~thimble pedestal；3~air jet system；
4~bottom electrode.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it will be appreciated that described herein
Specific embodiment only to explain the present invention, is not intended to limit the present invention.Described embodiment is only the present invention one
Divide embodiment, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not making
The all other embodiment obtained under the premise of creative work, belongs to the scope of protection of the invention.
In the description of the invention, it is necessary to which the orientation of the instruction such as explanation, term " on ", " under " or position relationship are base
In orientation shown in the drawings or position relationship, be for only for ease of description the utility model and simplify and describe, rather than instruction or
Imply that signified device or element there must be specific orientation, with specific azimuth configuration and operation, therefore it is not intended that
Limitation of the present invention.In addition, in the description of the invention, it is necessary to explanation, unless otherwise clearly defined and limited, art
Language " installation ", " connected ", " connection " should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or
It is integrally connected；Can be mechanical connection or electrical connection；Can be joined directly together, can also be by between intermediary
Connect connected, can be the connection of two element internals.For the ordinary skill in the art, can be understood with concrete condition
The concrete meaning of above-mentioned term in the present invention.
Fig. 2 is the cross-sectional view of the system of the reduction process cavity particle of the present invention.As shown in Fig. 2 reduce work
The system of skill cavity particle includes：Gas passage 1, in process cavity thimble structure 2, import purge gas；And jet
Device 3, it is connected with gas passage 1, gas is closely injected in the surface of bottom electrode 4.Thimble structure 2 includes thimble 21 and top
Pin pedestal 22, it is preferably, the air inlet 11 of gas passage 1 is arranged on thimble pedestal 22, and gas leads to from air inlet 11 via gas
Road 1 flows to air jet system.Gas flow indicated by an arrow in fig. 2.In the present embodiment, air jet system 3 is to be arranged on
The air jetting holes on thimble top.More preferably, when lifting thimble 21, the position of air jetting holes is slightly above bottom electrode 4
Surface.But the present invention is not limited to this, air jet system 3 can also be other structures being arranged on thimble.Such as it is designed as
Collapsible structure, it is being retracted in the state of in thimble 21, when in use, is being stretched out from thimble 21 is interior to bottom electrode 4
Surface is purged.Further, air jet system 3 can also be rotary structure, in purging, can move in a circle, from
And further improve the scope and effect of purging.
In addition, as shown in Fig. 2 air jet system 3 is arranged on thimble 21.But the present invention is not limited to this, gas injection
Device 3 can also for example be arranged on the surface of bottom electrode 4, as long as gas can be closely injected in the surface of bottom electrode 4.
In order to further illustrate the system of the reduction process cavity particle of the present invention, carved below with inductively coupled plasma
It is described in detail exemplified by erosion machine process cavity.Thimble is four pins in the present embodiment, and gas passage is provided with inside four thimbles,
And it is connected to form air guide path with the gas passage in thimble pedestal, air inlet is located on thimble pedestal.Wherein, thimble is straight
Footpath is 1~3mm, a diameter of 0.5mm~1.5mm of air guide channel.Open up 4~8 fumaroles on thimble top, fumarole it is straight
Footpath is 0.01mm~0.2mm.When thimble rises, the position of fumarole is slightly above the upper surface or substantially parallel of bottom electrode.Top
The material of pin is ceramics, resin or metal alloy.Sprayed by setting air guide channel inside thimble and opening up gas at an upper portion thereof
Hole, because air jetting holes are close to bottom electrode (pedestal) surface, it is easier to produce larger air-flow in wafer surface, what is so purged is dynamic
Power and effect are much better than traditional mode.
Illustrated below in conjunction with Fig. 3 and Fig. 4 for the embodiment of the method for the reduction process cavity particle of the present invention.
In etching process S1, using Cl2Shallow trench isolation (STI) etching is carried out to silicon chip with HBr, now thimble is fallen, reaction
Gas enters from upper nozzle, as shown in Fig. 4 (a).
In piece step S2 is taken, lift thimble and lift silicon chip, by complete etching technics after silicon chip extracting process cavity, such as
Shown in Fig. 4 (b).
In dry method cleaning step S3, thimble declines, and is passed through the reacting gas needed for dry method cleaning by upper nozzle, enters
The plasma dry cleaning of row process cavity, as shown in Fig. 4 (c).Technological parameter sets as follows：Air pressure is 5mT~100mT, excitation
Power is 800W, and substrate bias power is 0W~50W, O2Flow is 20sccm~200sccm, SF6Flow is 20sccm~200sccm,
Process time is 10s~120s.
In purge step S4, thimble rises, and by the gas spout on thimble, gas needed for purging is passed through, to lower electricity
Pole (pedestal) surface is purged, as shown in Fig. 4 (d).Purge gas is He gas, gas flow 20sccm~5000sccm, gas
Press as 5mT~100mT or pressure control is put into valve standard-sized sheet to reach maximum pumping speed, purge time is 5s~120s.
Specific one is these are only, but the present invention is not limited to this, such as purge gas can also be Ar gas etc.
Inert gas or nitrogen, O can also be passed through2Or F base gases, start radio frequency remove lower electrode surface C bases or
Other particles.In addition, purge step is not all necessary after each dry method cleaning step, entered according to actual conditions with suitably frequency
OK, specific aim carries out purge step again when or there is lower electrode surface contamination.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, the change or replacement that can readily occur in, all should
It is included within the scope of the present invention.
Claims (10)
- A kind of 1. system for reducing process cavity particle, it is characterised in thatIncluding：Gas passage, in process cavity thimble structure, import purge gas；AndAir jet system, is connected with the gas passage, and gas is closely injected in into lower electrode surface.
- 2. the system according to claim 1 for reducing process cavity particle, it is characterised in thatThe thimble structure includes thimble and thimble pedestal, and the air inlet of the gas passage is arranged on the thimble pedestal.
- 3. the system according to claim 2 for reducing process cavity particle, it is characterised in thatThe air jet system is arranged on the thimble.
- 4. the system according to claim 3 for reducing process cavity particle, it is characterised in thatThe air jet system is the air jetting holes for being arranged on the thimble top.
- 5. the system according to claim 4 for reducing process cavity particle, it is characterised in thatWhen lifting the thimble, the position of the air jetting holes is slightly above the lower electrode surface.
- 6. the system according to claim 5 for reducing process cavity particle, it is characterised in thatThe air jetting holes are 4~8, a diameter of 0.01mm~0.2mm.
- 7. the system according to claim 1 for reducing process cavity particle, it is characterised in thatThe gas injection apparatus is arranged on the lower electrode surface.
- A kind of 8. method for reducing process cavity particle, it is characterised in thatComprise the following steps：Dry method cleaning step, plasma dry cleaning is carried out to process cavity；AndPurge step, thimble is lifted, purge gas is closely injected in by lower electrode surface by air jet system, to bottom electrode Surface is purged.
- 9. the method according to claim 8 for reducing process cavity particle, it is characterised in thatThe purge gas is argon gas, helium, nitrogen, O2Or F base reactant gases.
- 10. the method for reduction process cavity particle according to claim 8 or claim 9, it is characterised in thatThe purge gas flow is 20sccm~5000sccm, and air pressure is 5mT~100mT, and purge time is 5s~120s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710379454.8A CN107452591A (en) | 2017-05-25 | 2017-05-25 | A kind of system and method for reducing process cavity particle |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710379454.8A CN107452591A (en) | 2017-05-25 | 2017-05-25 | A kind of system and method for reducing process cavity particle |
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| Publication Number | Publication Date |
|---|---|
| CN107452591A true CN107452591A (en) | 2017-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710379454.8A Pending CN107452591A (en) | 2017-05-25 | 2017-05-25 | A kind of system and method for reducing process cavity particle |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115318761A (en) * | 2022-08-16 | 2022-11-11 | 长鑫存储技术有限公司 | Chamber cleaning method |
| TWI790462B (en) * | 2019-08-23 | 2023-01-21 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma treatment device and method including adjustable lifting thimble assembly |
| WO2023040757A1 (en) * | 2021-09-17 | 2023-03-23 | 江苏鲁汶仪器有限公司 | Cleaning method for plasma etching chamber, and application thereof |
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| KR20090125434A (en) * | 2008-06-02 | 2009-12-07 | 주식회사 에이디피엔지니어링 | Lift pin |
| CN105765103A (en) * | 2013-12-02 | 2016-07-13 | 应用材料公司 | Methods and apparatus for in-situ cleaning of a process chamber |
| CN106449366A (en) * | 2016-11-09 | 2017-02-22 | 上海华力微电子有限公司 | Method for solving particle pollution on surface of electrostatic chuck in etching cavity |
-
2017
- 2017-05-25 CN CN201710379454.8A patent/CN107452591A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090125434A (en) * | 2008-06-02 | 2009-12-07 | 주식회사 에이디피엔지니어링 | Lift pin |
| CN105765103A (en) * | 2013-12-02 | 2016-07-13 | 应用材料公司 | Methods and apparatus for in-situ cleaning of a process chamber |
| CN106449366A (en) * | 2016-11-09 | 2017-02-22 | 上海华力微电子有限公司 | Method for solving particle pollution on surface of electrostatic chuck in etching cavity |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI790462B (en) * | 2019-08-23 | 2023-01-21 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma treatment device and method including adjustable lifting thimble assembly |
| WO2023040757A1 (en) * | 2021-09-17 | 2023-03-23 | 江苏鲁汶仪器有限公司 | Cleaning method for plasma etching chamber, and application thereof |
| CN115318761A (en) * | 2022-08-16 | 2022-11-11 | 长鑫存储技术有限公司 | Chamber cleaning method |
| CN115318761B (en) * | 2022-08-16 | 2023-10-13 | 长鑫存储技术有限公司 | Chamber cleaning method |
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| PB01 | Publication | ||
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Application publication date: 20171208 |