CN106449366A - Method for solving particle pollution on surface of electrostatic chuck in etching cavity - Google Patents
Method for solving particle pollution on surface of electrostatic chuck in etching cavity Download PDFInfo
- Publication number
- CN106449366A CN106449366A CN201610993686.8A CN201610993686A CN106449366A CN 106449366 A CN106449366 A CN 106449366A CN 201610993686 A CN201610993686 A CN 201610993686A CN 106449366 A CN106449366 A CN 106449366A
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- Prior art keywords
- electrostatic chuck
- etching
- process gas
- etching cavity
- chuck surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a method for solving particle pollution on the surface of an electrostatic chuck in an etching cavity. The method comprises the following steps of performing non-wafer cleaning on the etching cavity before a wafer is etched; after the non-wafer cleaning on the etching cavity is completed, introducing first process gas for the first time, introducing inert gas from the back surface of the electrostatic chuck, mixing the inert gas and the first process gas to form turbulence on the surface of the electrostatic chuck, repeatedly cleaning the particles on the surface of the electrostatic chuck, and sucking the particles on the surface out of the cavity along with gas flow; then, introducing second process etching gas, and performing micro-etching on the remaining particles on the surface of the electrostatic chuck; after the micro-etching is performed, introducing the first process gas again, introducing a large amount of inert gas from the back surface of the electrostatic chuck, mixing the inert gas and the first process gas to form turbulence on the surface of the electrostatic chuck, and repeatedly cleaning the particles on the surface of the electrostatic chuck.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of solve electrostatic in etching cavity
The method of chuck surface particle contamination.
Background technology
At present, in mass wafer manufacture process, with being continuously increased of wafer processing quantity, the inside of etching cavity
Environment can change therewith, that is, front a piece of/batch wafer to rear a piece of/batch have impact to a certain degree, there is memory effect.
This memory effect is wherein mainly reflected in the accumulation of polymer, that is, in etching cavity wall, the type of polymer can according to wait from
The difference of daughter reactant and product and different, be broadly divided into inorganic polymer and organic polymer etc..
The research of the memory effect causing in the accumulation etching cavity wall currently for polymer in etching process is in work
Many kinds of measures has been given on industry and there is good improvement, wherein most popular as the no automatic dry method of wafer
Etch cleaned method (Waferless Auto-Cleaning, abbreviation WAC) and advanced etching cavity etching condition control
(Advanced chamber condition control, abbreviation AC3), is usually used the gases such as fluorine-containing NF3 and removes mineral-type
Polymer, is removed using O2 and precipitates one layer of similar silicon dioxide on organic polymer etching cavity inwall after the cleaning
Polymer, this WAC-AC3 processing step can effectively suppress the memory effect of cavity polymer.But the etch chamber in AC3
During body weight newly deposits silicon-oxygen polymer, except deposited polymer being had on cavity inner wall in electrostatic chuck surface equally
Silicon-oxygen polymer can be deposited, and electrostatic chuck is temperature control unit, zones of different has different temperature ranges, this to temperature
The sensitive polymer of degree is attached to electrostatic chuck table in electrostatic chuck surface because the effect of temperature can be curled into particulate pollutant
Face.
In follow-up wafer etching process, electrostatic chuck firmly adsorbs wafer, in crystalline substance by electrostatic adsorption
Due to the particulate pollutant of electrostatic interaction wafer rear meeting adsorption electrostatic chuck surface after the completion of circle operation, so transmit in wafer
During and all can drop granule thus polluting other wafers in brilliant box, thus pollute the final wafer of source impact producing
The yield of product.
Currently for above-mentioned particle contamination problems, existing factory is mainly solved by two approach, and one is cold
But adding unit sealing coat in device, isolates to operation wafer, it is to avoid cross-contamination in chiller, and this method exists
The degree of particle contamination can be improved to a certain extent, but cannot be solved from root；Two is the cleaning strengthening wet method
Intensity, by HF acid peel off surface particles, this method simultaneously also can etching grid oxide layer, grid is caused damage；In order to
The particle contamination problems of effectively solving electrostatic chuck surface, the source that eliminating particle pollutes from root herein, in wafer operation
Electrostatic chuck surface granule is purged in the case that front guarantee electrostatic chuck is injury-free, it is to avoid wafer is after operation
The adsorption particle source due to electrostatic interaction.
Content of the invention
The technical problem to be solved is that there is drawbacks described above in prior art, provides one kind can solve the problem that
The method of electrostatic chuck surface particle contamination in etching cavity.
In order to realize above-mentioned technical purpose, according to the present invention, there is provided electrostatic chuck surface in a kind of solution etching cavity
The method of particle contamination, including：Carry out no wafer cleaning etching cavity before wafer etching；No wafer cleaning etching cavity it
Afterwards, it is passed through the first process gas for the first time, be passed through noble gases and the first process gas in electrostatic from the electrostatic chuck back side simultaneously
Chuck surface forms turbulent flow cleaning electro-static chuck surface particles repeatedly, makes surface particles extract cavity out with air-flow；Then, it is passed through
Two technique etching gas carry out micro etch to the granule that electrostatic chuck surface remains；Micro etch processes after completing and is passed through the again
One process gas, is passed through big flow noble gases and the first process gas in electrostatic chuck surface shape from the electrostatic chuck back side simultaneously
Become turbulent flow cleaning electro-static chuck surface particles repeatedly.
Preferably, described noble gases are helium.
Preferably, no wafer cleaning etching cavity includes the original coating cleaning removing etching cavity inwall, and is carving
Erosion cavity inner wall growth new coating.
Preferably, when being passed through the first process gas for the first time, the flow of the first process gas is more than 500sccm.
Preferably, being passed through pressure during the first process gas for the first time is vacuum pressure.
Preferably, when being passed through the first process gas again, the flow of the first process gas is more than 500sccm.
Preferably, being passed through pressure during the first process gas again is vacuum pressure.
Preferably, the second technique etching gas are NF3.
Preferably, the second technique etching gas are SF6.
Brief description
In conjunction with accompanying drawing, and by reference to detailed description below, it will more easily have more complete understanding to the present invention
And its adjoint advantages and features are more easily understood, wherein：
Fig. 1 schematically shows electrostatic chuck surface granule in solution etching cavity according to the preferred embodiment of the invention
The first step of the method for pollution.
Fig. 2 schematically shows electrostatic chuck surface granule in solution etching cavity according to the preferred embodiment of the invention
The second step of the method for pollution.
Fig. 3 schematically shows electrostatic chuck surface granule in solution etching cavity according to the preferred embodiment of the invention
The third step of the method for pollution.
Fig. 4 schematically shows electrostatic chuck surface granule in solution etching cavity according to the preferred embodiment of the invention
The four steps of the method for pollution.
It should be noted that accompanying drawing is used for the present invention is described, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.And, in accompanying drawing, same or like element indicates same or like label.
Specific embodiment
In order that present disclosure is more clear and understandable, with reference to specific embodiments and the drawings in the present invention
Appearance is described in detail.
The invention discloses a kind of method solving electrostatic chuck surface particle contamination in etching cavity, including：In wafer
Carry out no wafer cleaning etching cavity before etching, eliminate the memory effect of cavity；After eliminating cavity memory effect and then
It is passed through the first process gas of big flow, be passed through big flow noble gases (such as helium) and first from the electrostatic chuck back side simultaneously
Process gas forms turbulent flow cleaning electro-static chuck surface particles repeatedly in electrostatic chuck surface, makes surface particles extract chamber out with air-flow
Body；Then, it is passed through the second technique etching gas and micro etch is carried out to the granule that electrostatic chuck surface remains；Micro etch processes and completes
It is passed through big flow first process gas afterwards again and be passed through big flow noble gases (such as helium) from the electrostatic chuck back side simultaneously
Form turbulent flow cleaning electro-static chuck surface particles repeatedly with the first process gas in electrostatic chuck surface, residual after elimination said method
Remaining absorption, in the granule of electrostatic chuck surface, plays the effect clearing up electrostatic chuck surface granule further.The method realizes letter
Single, with low cost, effect is significant.
The present disclosure applies equally to the shallow ridges under identical cavity constructions is groove etched, in the etching cavity such as side wall etching, electrostatic is inhaled
The removing of panel surface granule.
Will be detailed below the preferred embodiments of the present invention.
Fig. 1 to Fig. 4 schematically shows electrostatic chuck table in solution etching cavity according to the preferred embodiment of the invention
Each step of the method for face particle contamination.
As shown in Figures 1 to 4, in solution etching cavity according to the preferred embodiment of the invention, electrostatic chuck surface granule is dirty
The method of dye includes：
First step：Before existing etching process, etching cavity is carried out with no wafer-process and removes cavity inner wall
Precipitate redeposited one layer of new coating 10, electrostatic chuck is difficult to image side wall one due to the regulation and control face coat of internal temperature
The firm depositing coating of sample, is more to form granule 20 to be attached to electrostatic chuck surface；
Second step：After etching cavity deposits one layer of silicon-oxygen polymer, using big flow the first process gas 30 (such as
N2, He etc.) and repeatedly rinse electrostatic chuck surface with reference to the helium gas at the electrostatic chuck back side, surface particles are detached reaction chamber
Body；For example, using big flow under low vacuum pressure (0mtorr) (>The first process gas 30 500sccm).
Third step：Using the second technique etching gas 40 containing low discharge (as NF3, SF6Deng) relatively low true when low bias is deposited
Under pneumatics power, cavity particularly electrostatic chuck surface is carried out with the cleaning of silicon-oxygen polymer coating, electrostatic chuck surface is adsorbed
Coating cleaning is clean；
Four steps：After the microetch, reuse big flow first process gas and combination back of the body helium gas are rushed repeatedly
Wash electrostatic chuck surface, surface particles are detached reaction cavity.For example, using big flow under low vacuum pressure (0mtorr) (>
The first process gas 30 500sccm).
After electrostatic chuck surface is cleared up, you can incoming for operation wafer vacuum cavity is performed etching operation.
It should be noted that unless stated otherwise or point out, otherwise the term in description " first ", " second ", "
Three " etc. description is used only for distinguishing each assembly in description, element, step etc., rather than is used for representing each assembly, unit
Logical relation between element, step or ordering relation etc..
Although it is understood that the present invention is disclosed as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
The technology contents that the disclosure above all can be utilized are made many possible variations and modification, or are revised as to technical solution of the present invention
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
Interior.
And it should also be understood that the present invention is not limited to specific method described herein, compound, material, system
Make technology, usage and application, they can change.It should also be understood that term described herein be used merely to describe specific
Embodiment, rather than be used for limiting the scope of the present invention.Must be noted that herein and claims used in
Singulative " one ", " a kind of " and " being somebody's turn to do " include complex reference, unless context explicitly indicates that contrary.Therefore, example
As the citation of " element " meaned with the citation to one or more elements, and including known to those skilled in the art
Its equivalent.Similarly, as another example, the citation of " step " or " device " is meaned to one or
Multiple steps or the citation of device, and potentially include secondary step and second unit.Should be managed with broadest implication
All conjunctions that solution uses.Therefore, word "or" should be understood that the definition with logical "or", rather than logical exclusive-OR
Definition, unless context explicitly indicates that contrary.Structure described herein will be understood as also quoting from the function of this structure
Equivalent.Can be interpreted that approximate language should be understood like that, unless context explicitly indicates that contrary.
And, the method for the embodiment of the present invention and/or the realization of system may include manual, automatic or execute selected in combination
Task.And, the real instrument of the embodiment of the method according to the invention and/or system and equipment, available operating system is led to
Cross hardware, software or a combination thereof and realize several selected tasks.
Claims (9)
1. a kind of method solving electrostatic chuck surface particle contamination in etching cavity is it is characterised in that include：In wafer etching
Before carry out no wafer cleaning etching cavity；After no wafer cleaning etching cavity, it is passed through the first process gas for the first time, simultaneously
It is passed through noble gases and the first process gas from the electrostatic chuck back side and repeatedly clean electrostatic suction in electrostatic chuck surface formation turbulent flow
Panel surface granule, makes surface particles extract cavity out with air-flow；Then, it is passed through the second technique etching gas residual to electrostatic chuck surface
The granule staying carries out micro etch；Micro etch processes after completing and is passed through the first process gas again, simultaneously from the electrostatic chuck back side
It is passed through big flow noble gases and the first process gas and form turbulent flow cleaning electro-static chuck surface repeatedly in electrostatic chuck surface
Grain.
2. according to claim 1 solve etching cavity in electrostatic chuck surface particle contamination method it is characterised in that
Described noble gases are helium.
3. the method solving electrostatic chuck surface particle contamination in etching cavity according to claim 1 and 2, its feature exists
In, no wafer cleaning etching cavity includes the original coating cleaning removing etching cavity inwall, and in the life of etching cavity inwall
Long new coating.
4. the method solving electrostatic chuck surface particle contamination in etching cavity according to claim 1 and 2, its feature exists
In when being passed through the first process gas for the first time, the flow of the first process gas is more than 500sccm.
5. the method solving electrostatic chuck surface particle contamination in etching cavity according to claim 1 and 2, its feature exists
In being passed through pressure during the first process gas for the first time is vacuum pressure.
6. the method solving electrostatic chuck surface particle contamination in etching cavity according to claim 1 and 2, its feature exists
In when being passed through the first process gas again, the flow of the first process gas is more than 500sccm.
7. the method solving electrostatic chuck surface particle contamination in etching cavity according to claim 1 and 2, its feature exists
In being passed through pressure during the first process gas again is vacuum pressure.
8. the method solving electrostatic chuck surface particle contamination in etching cavity according to claim 1 and 2, its feature exists
In the second technique etching gas are NF3.
9. the method solving electrostatic chuck surface particle contamination in etching cavity according to claim 1 and 2, its feature exists
In the second technique etching gas are SF6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610993686.8A CN106449366A (en) | 2016-11-09 | 2016-11-09 | Method for solving particle pollution on surface of electrostatic chuck in etching cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610993686.8A CN106449366A (en) | 2016-11-09 | 2016-11-09 | Method for solving particle pollution on surface of electrostatic chuck in etching cavity |
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| CN106449366A true CN106449366A (en) | 2017-02-22 |
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ID=58207373
Family Applications (1)
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| CN201610993686.8A Pending CN106449366A (en) | 2016-11-09 | 2016-11-09 | Method for solving particle pollution on surface of electrostatic chuck in etching cavity |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107452591A (en) * | 2017-05-25 | 2017-12-08 | 鲁汶仪器有限公司（比利时） | A kind of system and method for reducing process cavity particle |
| CN107706076A (en) * | 2017-08-16 | 2018-02-16 | 上海华力微电子有限公司 | A kind of method for improving cmos image sensor etching cavity metallic pollution |
| CN107863304A (en) * | 2017-11-08 | 2018-03-30 | 上海华力微电子有限公司 | A kind of method for detecting electrostatic chuck surface particulate pollutant |
| CN108106975A (en) * | 2017-11-30 | 2018-06-01 | 上海华力微电子有限公司 | The detection method of etching cavity component |
| CN108847390A (en) * | 2018-06-13 | 2018-11-20 | 上海华力微电子有限公司 | A kind of method of plasma etching |
| CN113035710A (en) * | 2021-03-15 | 2021-06-25 | 上海华力微电子有限公司 | Method for optimizing polysilicon etching defects of CIS sensor |
| CN114520137A (en) * | 2020-11-18 | 2022-05-20 | 中国科学院微电子研究所 | Device and method for removing particles on surface of electrostatic chuck of etching equipment |
| CN115318755A (en) * | 2021-05-10 | 2022-11-11 | 中国科学院微电子研究所 | Cleaning method of plasma doping process cavity |
| CN117219561A (en) * | 2023-11-09 | 2023-12-12 | 合肥晶合集成电路股份有限公司 | Method for reducing risk of crystal wafer in HARP (hybrid automatic repeat request) process |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101195117A (en) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning reaction cavity |
| CN101214487A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning cavity of semiconductor etching equipment |
| CN101436524A (en) * | 2007-11-15 | 2009-05-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for improving chamber particle state of etching technique |
| CN101450346A (en) * | 2007-12-05 | 2009-06-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Dry cleaning method during preparing semi-conductor |
| CN101728230A (en) * | 2008-10-17 | 2010-06-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for processing semiconductor substrate |
| CN102543831A (en) * | 2010-12-20 | 2012-07-04 | 诺发系统有限公司 | System and apparatus for flowable deposition in semiconductor fabrication |
| CN103861843A (en) * | 2012-12-12 | 2014-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber cleaning method and substrate etching method |
| CN104867815A (en) * | 2015-04-29 | 2015-08-26 | 上海华力微电子有限公司 | Cleaning method of etching reaction chamber |
-
2016
- 2016-11-09 CN CN201610993686.8A patent/CN106449366A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101195117A (en) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning reaction cavity |
| CN101214487A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning cavity of semiconductor etching equipment |
| CN101436524A (en) * | 2007-11-15 | 2009-05-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for improving chamber particle state of etching technique |
| CN101450346A (en) * | 2007-12-05 | 2009-06-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Dry cleaning method during preparing semi-conductor |
| CN101728230A (en) * | 2008-10-17 | 2010-06-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for processing semiconductor substrate |
| CN102543831A (en) * | 2010-12-20 | 2012-07-04 | 诺发系统有限公司 | System and apparatus for flowable deposition in semiconductor fabrication |
| CN103861843A (en) * | 2012-12-12 | 2014-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber cleaning method and substrate etching method |
| CN104867815A (en) * | 2015-04-29 | 2015-08-26 | 上海华力微电子有限公司 | Cleaning method of etching reaction chamber |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107452591A (en) * | 2017-05-25 | 2017-12-08 | 鲁汶仪器有限公司（比利时） | A kind of system and method for reducing process cavity particle |
| CN107706076B (en) * | 2017-08-16 | 2019-04-12 | 上海华力微电子有限公司 | A method of improving cmos image sensor etching cavity metallic pollution |
| CN107706076A (en) * | 2017-08-16 | 2018-02-16 | 上海华力微电子有限公司 | A kind of method for improving cmos image sensor etching cavity metallic pollution |
| CN107863304A (en) * | 2017-11-08 | 2018-03-30 | 上海华力微电子有限公司 | A kind of method for detecting electrostatic chuck surface particulate pollutant |
| CN107863304B (en) * | 2017-11-08 | 2020-08-04 | 上海华力微电子有限公司 | Method for detecting particle pollutants on surface of electrostatic chuck |
| CN108106975B (en) * | 2017-11-30 | 2020-04-14 | 上海华力微电子有限公司 | Detection method of etching cavity component |
| CN108106975A (en) * | 2017-11-30 | 2018-06-01 | 上海华力微电子有限公司 | The detection method of etching cavity component |
| CN108847390A (en) * | 2018-06-13 | 2018-11-20 | 上海华力微电子有限公司 | A kind of method of plasma etching |
| CN114520137A (en) * | 2020-11-18 | 2022-05-20 | 中国科学院微电子研究所 | Device and method for removing particles on surface of electrostatic chuck of etching equipment |
| CN113035710A (en) * | 2021-03-15 | 2021-06-25 | 上海华力微电子有限公司 | Method for optimizing polysilicon etching defects of CIS sensor |
| CN115318755A (en) * | 2021-05-10 | 2022-11-11 | 中国科学院微电子研究所 | Cleaning method of plasma doping process cavity |
| CN115318755B (en) * | 2021-05-10 | 2024-04-12 | 中国科学院微电子研究所 | Cleaning method of plasma doping process chamber |
| CN117219561A (en) * | 2023-11-09 | 2023-12-12 | 合肥晶合集成电路股份有限公司 | Method for reducing risk of crystal wafer in HARP (hybrid automatic repeat request) process |
| CN117219561B (en) * | 2023-11-09 | 2024-02-09 | 合肥晶合集成电路股份有限公司 | Method for reducing risk of crystal wafer in HARP (hybrid automatic repeat request) process |
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Application publication date: 20170222 |