CN108847390A - A kind of method of plasma etching - Google Patents
A kind of method of plasma etching Download PDFInfo
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- CN108847390A CN108847390A CN201810604623.8A CN201810604623A CN108847390A CN 108847390 A CN108847390 A CN 108847390A CN 201810604623 A CN201810604623 A CN 201810604623A CN 108847390 A CN108847390 A CN 108847390A
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- reaction chamber
- helium
- plasma etching
- wafer
- pipeline
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000001020 plasma etching Methods 0.000 title claims abstract description 43
- 239000001307 helium Substances 0.000 claims abstract description 92
- 229910052734 helium Inorganic materials 0.000 claims abstract description 92
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 89
- 238000006243 chemical reaction Methods 0.000 claims abstract description 66
- 238000010521 absorption reaction Methods 0.000 claims abstract description 27
- 238000004140 cleaning Methods 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229920000592 inorganic polymer Polymers 0.000 claims description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 48
- 238000012423 maintenance Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000973497 Siphonognathus argyrophanes Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to ic manufacturing technology fields, disclose a kind of method of plasma etching, and the method for the plasma etching includes the following steps：S1：Preceding batch wafer carries out plasma etching operation in the reaction chamber of plasma etching platform；S2：Reaction chamber is cleaned, while being passed through helium to reaction chamber from the helium pipeline of Electrostatic Absorption disk；And S3：Batch wafer carries out plasma etching operation in reaction chamber afterwards.While the present invention is by cleaning reaction chamber, helium is passed through to reaction chamber from the helium pipeline of Electrostatic Absorption disk, to reduce in cleaner process, polymer enters in helium pipeline from helium pipeline opening, be conducive to improve pollution of the polymer to helium pipeline in entire cleaning procedure, so that the etching for reducing the subsequent batches wafer as caused by the pollution of helium pipeline is bad, while being conducive to improve the utilization rate of board, production efficiency is improved, the cost of board is reduced.
Description
Technical field
The present invention relates to ic manufacturing technology field, in particular to a kind of method of plasma etching.
Background technique
Electrostatic Absorption disk is that a kind of conduction of integrated RF (Radio Frequency, RF), Electrostatic Absorption and temperature pass
Feel in the component of one, is played a crucial role in etching process.The reality of the temperature sensing of Electrostatic Absorption disk
Now method is：During semiconductor etching process, first pass through electrostatic by wafer adsorption, be fixed on Electrostatic Absorption disk
On the surface of (Electrostatic Chuck, ESC), then helium enters from the helium pipeline in Electrostatic Absorption disk, and from quiet
Multiple helium duct output ports of Electro Sorb panel surface flow out, and exchange heat with the contact surface of wafer, to reach temperature sensing
Effect.
In process of production, it after every one or more pieces wafers of etching, will carry out being repeated once cleaning procedure, such as without wafer
Automatic cleaning technique (Wafer-less Auto Clean, WAC), i.e., after one or more pieces wafers etch, in reaction chamber
In room without wafer in the case where, board enters cleaning mode, on the inner wall of cleaning reaction chamber in etching process produced by
Polymer.In entire cleaner process, because partial polymer can be defeated by helium pipeline without the covering of wafer
Outlet enters in helium pipeline, so that helium pipeline is contaminated, by accumulating for a long time, helium duct output port is blocked up
Plug or number of polymers rest in helium pipeline, the normal conveying gas of helium pipeline are influenced, to influence etching work
Skill effect causes bad.
In addition, the method for the existing polymer for removing helium pipeline is：In board maintenance, Electrostatic Absorption disk is dismantled
Get off to carry out periodic cleaning, the helium pipeline even more renewed, this method makes board maintenance period shorter, increases board
Cost, also extend the downtime of board, reduce the utilization rate of board.
Summary of the invention
It is an object of the present invention to provide a kind of methods of plasma etching, to reduce since helium pipeline is dirty
The etching of subsequent batches wafer caused by dye is bad.
It is a further object of the present invention to provide a kind of methods of plasma etching, to reduce the cost of board, simultaneously
The utilization rate of board is improved, i.e. raising production efficiency.
To achieve the goals above, the present invention provides a kind of method of plasma etching, include the following steps：
S1：Preceding batch wafer carries out plasma etching operation in the reaction chamber of plasma etching platform；S2：It is right
The reaction chamber is cleaned, while being passed through helium from the helium pipeline of Electrostatic Absorption disk to the reaction chamber, described quiet
Electro Sorb disk is located at the bottom of the reaction chamber in the reaction chamber；And S3：Batch wafer is in the reaction afterwards
Plasma etching operation is carried out in chamber.
Optionally, in step s 2, the pressure of the helium is greater than the pressure of the reaction chamber, further, described
The pressure of helium is greater than the 5%~10% of the pressure of the reaction chamber.
Optionally, the Electrostatic Absorption disk includes：For carrying the disk body and helium pipeline of wafer, helium pipeline position
In in the disk body.
Optionally, the helium tube road has multiple helium duct output ports, and the multiple helium duct output port is located at
On the absorption surface of the disk body, helium is conveyed to the reaction chamber by the helium duct output port.
Optionally, in step s 2, clean cleaning procedure is carried out using no wafer automated cleaning to the reaction chamber
Technique, the no wafer automatic cleaning technique are used to remove original coating cleaning of the inner wall of the reaction chamber, and in institute
It states and generates new coating on the inner wall of reaction chamber.
Optionally, inorganic polymer is cleaned using Nitrogen trifluoride in the no wafer automatic cleaning technique, it is clear using oxygen
Clean organic polymer.
Optionally, the reaction chamber of the etching machine bench includes the reaction chamber of plasma etching platform.
Optionally, the quantity of the preceding batch wafer is multiple, and the quantity of the rear batch wafer is multiple.
The present invention has significant advantages and beneficial effects compared with prior art, is embodied in：
The method of a kind of plasma etching provided by the present invention, by etching operation in preceding batch wafer plasma
While carrying out cleaning procedure to reaction chamber afterwards, it is passed through helium to the reaction chamber from the helium pipeline of Electrostatic Absorption disk,
It is bad with the etching for reducing the subsequent batches wafer as caused by the pollution of helium pipeline, while the cost of board is reduced, improve machine
The utilization rate of platform, i.e. raising production efficiency.
Detailed description of the invention
The process flow chart of the plasma etching of Fig. 1 embodiment of the present invention；
Fig. 2 increases the schematic diagram of helium purge while being the cleaning procedure of the embodiment of the present invention.
Description of drawing identification：
100- disk body；101- disk body；102- helium pipeline；102a- helium duct output port；
200- helium；
400- reaction chamber.
Specific embodiment
As stated in the background art, it inventors have found that during semiconductor etching process, is inhaled since wafer is covered on electrostatic
On attached disk, the polymer in reaction chamber can not enter in helium pipeline from helium duct output port.In cleaning process, due to
Electrostatic Absorption disk does not have wafer covering, and partial polymer enters in helium pipeline, and helium pipeline is caused to be contaminated, so that
In the etching technics of subsequent batches wafer, when inputting helium, a part of polymer in helium pipeline is transmitted back to chamber again
In room, the helium for carrying polymer is adsorbed face from wafer and slowly flows to wafer upper surface along the side wall of wafer, influences crystalline substance
The etching of round top surface edge, that is, the groove pattern at the etched surface edge of wafer causes the etching of wafer bad, to produce
Production product it is bad.And the polymer not being pulled away in helium pipeline etches subsequent needs by prolonged accumulation
Wafer is there are hidden danger, simultaneously as the narrows passageways that the accumulation of polymer causes helium pipeline transportable, or even blocking, it causes
The thermal conducting function of Electrostatic Absorption disk declines, and can not be effectively reduced the temperature of wafer, further, influence the quarter of wafer
The size on corrosion line road causes etching effect bad, that is, the groove pattern of wafer is far from feature of interest, to cause wafer not
Yield rises.
Based on the studies above, the present invention is effectively improved by providing a kind of method of plasma etching in cleaner
Polymer enters in helium pipeline during skill, to reduce the subsequent batches wafer as caused by the pollution of helium pipeline
It etches bad.Meanwhile the cost of board is advantageously reduced, the utilization rate of board is improved, i.e. raising production efficiency.
Make below in conjunction with method of the drawings and specific embodiments to a kind of plasma etching of the invention further detailed
Explanation.According to following explanation, advantages and features of the invention will be become apparent from.It should be noted that attached drawing is all made of very simplification
Form and use non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Fig. 1 is the process flow chart of the plasma etching of the present embodiment.As shown in Figure 1, present embodiment discloses one kind
The method of plasma etching, the described method comprises the following steps：
S1：Preceding batch wafer carries out plasma etching operation in the reaction chamber of plasma etching platform；
S2：The reaction chamber is cleaned, while logical from the helium pipeline of Electrostatic Absorption disk to the reaction chamber
Enter helium, the Electrostatic Absorption disk is located at the bottom of the reaction chamber in the reaction chamber；And
S3：Batch wafer carries out plasma etching operation in the reaction chamber afterwards.
It is situated between in detail below with reference to method of the Fig. 1 and Fig. 2 to a kind of plasma etching provided by inventive embodiments
It continues.
S1：Preceding batch wafer carries out plasma etching operation in the reaction chamber 400 of plasma etching platform.?
In the present embodiment, the quantity of the preceding batch wafer is e.g. multiple, certainly in other embodiments, the preceding batch wafer
Quantity is also possible to 1.
S2：The reaction chamber 400 is cleaned, while from the helium pipeline 102 of Electrostatic Absorption disk 100 to described anti-
Chamber 400 is answered to be passed through helium 200, the Electrostatic Absorption disk 100 is located at the reaction chamber in the reaction chamber 400
400 bottom.
In the present embodiment, by being cleaned to the reaction chamber 400 from the helium of Electrostatic Absorption disk 100 while
Pipeline 102 is passed through helium 200 to the reaction chamber 400, advantageously reduces caused by polluting as helium pipeline 102 subsequent batch
The etching of secondary wafer is bad.Meanwhile the cost of board is advantageously reduced, and extend board maintenance period, reduce board
Downtime is conducive to the utilization rate for improving board, that is, is conducive to improve production efficiency.
To the reaction chamber 400 carry out clean cleaning procedure be, for example, using no wafer automatic cleaning technique, it is described
No wafer automatic cleaning technique is used to remove original coating cleaning of the inner wall of the reaction chamber, and in the reaction chamber
Inner wall on generate new coating.It is, for example, that inorganic polymer is cleaned using Nitrogen trifluoride in the no wafer automatic cleaning technique,
Organic polymer is e.g. cleaned using oxygen.
Fig. 2 increases the schematic diagram of helium purge while being the cleaning procedure of the present embodiment.As shown in Fig. 2, described quiet
Electro Sorb disk 100 includes disk body 101 and helium pipeline 102, and the disk body 101 is for carrying wafer, 102, the helium pipeline
In in the disk body 101.The helium pipeline 102 has multiple helium duct output port 102a, and the multiple helium pipeline is defeated
Outlet 102a is located on the absorption surface (i.e. the contact surface of Electrostatic Absorption disk and wafer contacts) of the disk body 100, by described
Helium duct output port 102a conveys helium to the reaction chamber 400.
In this step, the pressure of the helium 200 is, for example, to be greater than the pressure of the reaction chamber 400, that is, passes through institute
The pressure for stating the helium 200 that helium pipeline 102 is passed through to the reaction chamber 400 is big compared with the pressure of the reaction chamber 400, into
One step, the pressure of the helium 200 is greater than the 5%~10% of the pressure of the reaction chamber 400.It is defeated in the helium 200
When out, so that barotropic state is kept from the helium duct output port 102a helium exported and the reaction chamber 400, to increase
It states helium 200 to strafe the helium pipeline Efferent tube mouth 102a, the polymer effectively prevented in reaction chamber passes through helium
Feed channel output road junction 102a enters helium pipeline 102, meanwhile, extend the period of board maintenance.
S3：Batch wafer carries out plasma etching operation in the reaction chamber 400 afterwards.In the present embodiment, institute
The quantity for stating rear batch wafer is e.g. multiple, and certainly in other embodiments, the quantity of the rear batch wafer is also possible to 1
It is a.
In conclusion passing through the quarter in preceding batch wafer in a kind of method of plasma etching provided by the present invention
After losing operation, simultaneously when being cleaned to the reaction chamber, also from the helium pipeline of Electrostatic Absorption disk to the reaction chamber
Room is passed through helium, and the pressure of the helium is greater than the pressure of the reaction chamber, and the method is effectively prevented in cleaning procedure mistake
Cheng Zhong, the polymer in reaction chamber is entered in helium pipeline by helium pipeline opening, to reduce due to helium pipeline
The etching of subsequent batches wafer caused by polluting is bad.Meanwhile board cost is reduced, between the cleaning for extending Electrostatic Absorption disk
Every the time, the utilization rate of board is improved, i.e. raising production efficiency.
It is understood that although the present invention has been disclosed in the preferred embodiments as above, above-described embodiment not to
Limit the present invention.For any person skilled in the art, without departing from the scope of the technical proposal of the invention,
Many possible changes and modifications all are made to technical solution of the present invention using the technology contents of the disclosure above, or are revised as
With the equivalent embodiment of variation.Therefore, anything that does not depart from the technical scheme of the invention are right according to the technical essence of the invention
Any simple modifications, equivalents, and modifications made for any of the above embodiments still fall within the range of technical solution of the present invention protection
It is interior.
Claims (10)
1. a kind of method of plasma etching, which is characterized in that include the following steps：
S1：Preceding batch wafer carries out plasma etching operation in the reaction chamber of plasma etching platform；
S2：The reaction chamber is cleaned, while being passed through helium to the reaction chamber from the helium pipeline of Electrostatic Absorption disk
Gas, the Electrostatic Absorption disk are located at the bottom of the reaction chamber in the reaction chamber；And
S3：Batch wafer carries out plasma etching operation in the reaction chamber afterwards.
2. the method for plasma etching as described in claim 1, which is characterized in that in step s 2, the pressure of the helium
Power is greater than the pressure of the reaction chamber.
3. the method for plasma etching as claimed in claim 2, which is characterized in that the pressure of the helium is greater than described anti-
Answer the 5%~10% of the pressure of chamber.
4. the method for plasma etching as described in claim 1, which is characterized in that the Electrostatic Absorption disk includes：For
The disk body and helium pipeline of wafer are carried, the helium pipeline is located in the disk body.
5. the method for plasma etching as claimed in claim 4, which is characterized in that the helium tube road has multiple helium
Duct output port, the multiple helium duct output port is located on the absorption surface of the disk body, defeated by the helium pipeline
It exports to the reaction chamber and conveys helium.
6. the method for plasma etching as described in claim 1, which is characterized in that in step s 2, to the reaction chamber
Room carries out clean cleaning procedure using no wafer automatic cleaning technique, and the no wafer automatic cleaning technique is described for removing
Original coating of the inner wall of reaction chamber cleans, and generates new coating on the inner wall of the reaction chamber.
7. the method for plasma etching as claimed in claim 6, which is characterized in that in the no wafer automatic cleaning technique
Inorganic polymer is cleaned using Nitrogen trifluoride, organic polymer is cleaned using oxygen.
8. the method for plasma etching as described in claim 1, which is characterized in that the reaction chamber packet of the etching machine bench
Include the reaction chamber of plasma etching platform.
9. the method for plasma etching as described in claim 1, which is characterized in that the quantity of the preceding batch wafer is more
It is a.
10. the method for plasma etching as described in claim 1, which is characterized in that the quantity of batch wafer is after described
It is multiple.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810604623.8A CN108847390B (en) | 2018-06-13 | 2018-06-13 | Plasma etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810604623.8A CN108847390B (en) | 2018-06-13 | 2018-06-13 | Plasma etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108847390A true CN108847390A (en) | 2018-11-20 |
| CN108847390B CN108847390B (en) | 2021-04-02 |
Family
ID=64210944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810604623.8A Active CN108847390B (en) | 2018-06-13 | 2018-06-13 | Plasma etching method |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111383886A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | System for preventing corrosion of etching gas supply pipeline and plasma reactor operation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090065025A1 (en) * | 2007-09-07 | 2009-03-12 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Cleaning of plasma chamber walls using noble gas cleaning step |
| CN102013388A (en) * | 2009-09-03 | 2011-04-13 | 东京毅力科创株式会社 | Chamber cleaning method |
| CN102789960A (en) * | 2011-05-16 | 2012-11-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma cleaning method for plasma device cavity |
| CN104900483A (en) * | 2014-03-05 | 2015-09-09 | 朗姆研究公司 | Waferless clean in dielectric etch process |
| CN106449366A (en) * | 2016-11-09 | 2017-02-22 | 上海华力微电子有限公司 | Method for solving particle pollution on surface of electrostatic chuck in etching cavity |
-
2018
- 2018-06-13 CN CN201810604623.8A patent/CN108847390B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090065025A1 (en) * | 2007-09-07 | 2009-03-12 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Cleaning of plasma chamber walls using noble gas cleaning step |
| CN102013388A (en) * | 2009-09-03 | 2011-04-13 | 东京毅力科创株式会社 | Chamber cleaning method |
| CN102789960A (en) * | 2011-05-16 | 2012-11-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma cleaning method for plasma device cavity |
| CN104900483A (en) * | 2014-03-05 | 2015-09-09 | 朗姆研究公司 | Waferless clean in dielectric etch process |
| CN106449366A (en) * | 2016-11-09 | 2017-02-22 | 上海华力微电子有限公司 | Method for solving particle pollution on surface of electrostatic chuck in etching cavity |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111383886A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | System for preventing corrosion of etching gas supply pipeline and plasma reactor operation method |
| CN111383886B (en) * | 2018-12-27 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | System for preventing corrosion of etching gas supply pipeline and plasma reactor operation method |
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