CN108847390B - Plasma etching method - Google Patents
Plasma etching method Download PDFInfo
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- CN108847390B CN108847390B CN201810604623.8A CN201810604623A CN108847390B CN 108847390 B CN108847390 B CN 108847390B CN 201810604623 A CN201810604623 A CN 201810604623A CN 108847390 B CN108847390 B CN 108847390B
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- reaction chamber
- helium
- plasma etching
- pipeline
- helium gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Abstract
The invention relates to the technical field of integrated circuit manufacturing, and discloses a plasma etching method, which comprises the following steps: s1: carrying out plasma etching operation on the previous batch of wafers in a reaction chamber of a plasma etching machine; s2: cleaning the reaction chamber, and introducing helium gas into the reaction chamber from a helium gas pipeline of the electrostatic adsorption disc; and S3: and carrying out plasma etching operation on the wafers of the next batch in the reaction chamber. According to the invention, the reaction chamber is cleaned, and helium is introduced into the reaction chamber from the helium pipeline of the electrostatic adsorption disc, so that the polymer enters the helium pipeline from the helium pipeline opening in the cleaning process, and the pollution of the polymer to the helium pipeline in the whole cleaning process is favorably improved, therefore, the poor etching of the wafers in the subsequent batches caused by the pollution of the helium pipeline is reduced, the utilization rate of a machine table is favorably improved, the production efficiency is improved, and the cost of the machine table is reduced.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing, in particular to a plasma etching method.
Background
The electrostatic chuck is a component integrating Radio Frequency (RF) conduction, electrostatic adsorption and temperature sensing, and plays a crucial role in the etching process. The temperature sensing method of the electrostatic adsorption disc comprises the following steps: in the semiconductor etching process, a wafer is firstly adsorbed and fixed on the surface of an Electrostatic adsorption disk (ESC) through static electricity, and then helium enters from a helium pipeline in the Electrostatic adsorption disk and flows out from a plurality of helium pipeline output ports on the surface of the Electrostatic adsorption disk to exchange heat with the contact surface of the wafer, so that the temperature sensing effect is achieved.
In the production process, after each Wafer or a plurality of wafers are etched, a cleaning process such as Wafer-less Auto Clean (WAC) is repeated, that is, after the etching of one or a plurality of wafers is finished, the machine enters a cleaning mode under the condition that no Wafer is in the reaction chamber, so as to remove polymers generated on the inner wall of the reaction chamber in the etching process. In the whole cleaning process, because the wafer is not covered, part of polymer enters the helium pipeline through the helium pipeline output port, so that the helium pipeline is polluted, the helium pipeline output port is blocked after long-time accumulation, or a large amount of polymer stays in the helium pipeline, the normal gas conveying of the helium pipeline is influenced, the etching process effect is influenced, and the defect is caused.
In addition, the existing method for removing the polymer of the helium pipeline comprises the following steps: when the machine station is maintained, the electrostatic adsorption disc is detached to be cleaned regularly, and even a new helium pipeline is replaced.
Disclosure of Invention
One objective of the present invention is to provide a plasma etching method to reduce the poor etching of the wafers in the subsequent batch due to the contamination of the helium gas pipeline.
Another objective of the present invention is to provide a plasma etching method to reduce the cost of the machine and improve the utilization of the machine, i.e. the production efficiency.
In order to achieve the above object, the present invention provides a plasma etching method, comprising the steps of:
s1: carrying out plasma etching operation on the previous batch of wafers in a reaction chamber of a plasma etching machine; s2: cleaning the reaction chamber, and introducing helium gas into the reaction chamber from a helium gas pipeline of an electrostatic adsorption disc, wherein the electrostatic adsorption disc is positioned in the reaction chamber and is positioned at the bottom of the reaction chamber; and S3: and carrying out plasma etching operation on the wafers of the next batch in the reaction chamber.
Optionally, in step S2, the pressure of the helium gas is greater than the pressure of the reaction chamber, and further, the pressure of the helium gas is greater than 5% to 10% of the pressure of the reaction chamber.
Optionally, the electrostatic adsorption disk includes: the wafer loading device comprises a disc body for loading wafers and a helium pipeline, wherein the helium pipeline is positioned in the disc body.
Optionally, the helium pipeline has a plurality of helium pipeline delivery outlets, the plurality of helium pipeline delivery outlets are located on the adsorption surface of the disk body, and helium is delivered to the reaction chamber through the helium pipeline delivery outlets.
Optionally, in step S2, the cleaning process for cleaning the reaction chamber employs a waferless automatic cleaning process, which is used to remove the original coating from the inner wall of the reaction chamber and clean and generate a new coating on the inner wall of the reaction chamber.
Optionally, in the waferless automatic cleaning process, nitrogen trifluoride is used for cleaning the inorganic polymer, and oxygen is used for cleaning the organic polymer.
Optionally, the reaction chamber of the etching machine includes a reaction chamber of a plasma etching machine.
Optionally, the number of the front lot of wafers is multiple, and the number of the rear lot of wafers is multiple.
Compared with the prior art, the invention has the advantages and beneficial effects that:
according to the plasma etching method provided by the invention, the reaction chamber is cleaned after the plasma etching operation of the wafer in the previous batch, and helium is introduced into the reaction chamber from the helium pipeline of the electrostatic adsorption disc, so that the poor etching of the wafer in the subsequent batch caused by the pollution of the helium pipeline is reduced, the cost of a machine table is reduced, the utilization rate of the machine table is improved, and the production efficiency is improved.
Drawings
FIG. 1 is a process flow diagram of plasma etching according to an embodiment of the present invention;
FIG. 2 is a schematic illustration of a cleaning process of an embodiment of the present invention with the addition of a helium purge.
The attached drawings indicate the following:
100-electrostatic chuck; 101-a tray body; 102-a helium gas conduit; 102 a-helium gas conduit outlet;
200-helium gas;
400-a reaction chamber.
Detailed Description
As described in the background, the inventors have found that during a semiconductor etching process, polymer in the reaction chamber cannot enter the helium gas pipe from the output port of the helium gas pipe because the wafer is covered on the electrostatic chuck. In the cleaning process, as the electrostatic adsorption disc is not covered by the wafer, part of the polymer enters the helium pipeline to cause the helium pipeline to be polluted, so that in the etching process of the wafers in the subsequent batches, when the helium is input, part of the polymer in the helium pipeline is conveyed back to the chamber again, the helium carrying the polymer slowly flows to the upper surface of the wafer from the adsorbed surface of the wafer along the side wall of the wafer to influence the etching of the edge of the upper surface of the wafer, namely, the shape of a groove at the edge of the etched surface of the wafer causes the poor etching of the wafer, and the poor etching of the product is generated. Meanwhile, the polymer accumulation causes the transportation path of the helium pipeline to become narrow and even block, which causes the heat conduction function of the electrostatic adsorption disc to decrease, which can not effectively reduce the temperature of the wafer, further, the size of the etching line of the wafer is affected, which causes the poor etching effect, that is, the groove shape of the wafer is far away from the target shape, thereby causing the increase of the fraction defective of the wafer.
Based on the research, the invention provides the plasma etching method, which effectively improves the condition that the polymer enters the helium pipeline in the cleaning process, thereby reducing the poor etching of the wafers in the subsequent batch caused by the pollution of the helium pipeline. Meanwhile, the cost of the machine is reduced, the utilization rate of the machine is improved, and the production efficiency is improved.
The method for plasma etching according to the present invention is further described in detail with reference to the drawings and the embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 1 is a process flow diagram of plasma etching according to the embodiment. As shown in fig. 1, the present embodiment discloses a plasma etching method, which includes the following steps:
s1: carrying out plasma etching operation on the previous batch of wafers in a reaction chamber of a plasma etching machine;
s2: cleaning the reaction chamber, and introducing helium gas into the reaction chamber from a helium gas pipeline of an electrostatic adsorption disc, wherein the electrostatic adsorption disc is positioned in the reaction chamber and is positioned at the bottom of the reaction chamber; and
s3: and carrying out plasma etching operation on the wafers of the next batch in the reaction chamber.
A method for plasma etching according to an embodiment of the present invention is described in detail with reference to fig. 1 and 2.
S1: the previous batch of wafers is plasma etched in the reaction chamber 400 of the plasma etching machine. In this embodiment, the number of the previous batch of wafers is, for example, multiple, but in other embodiments, the number of the previous batch of wafers may also be 1.
S2: the reaction chamber 400 is cleaned, and helium gas 200 is introduced into the reaction chamber 400 from a helium gas pipeline 102 of the electrostatic adsorption disc 100, wherein the electrostatic adsorption disc 100 is located in the reaction chamber 400 and at the bottom of the reaction chamber 400.
In this embodiment, the reaction chamber 400 is cleaned and the helium gas 200 is introduced into the reaction chamber 400 from the helium gas pipeline 102 of the electrostatic adsorption disc 100, so that poor etching of the wafers in the subsequent batch caused by the contamination of the helium gas pipeline 102 is reduced. Meanwhile, the cost of the machine is reduced, the maintenance period of the machine is prolonged, the downtime of the machine is reduced, the utilization rate of the machine is improved, and the production efficiency is improved.
The cleaning process for cleaning the reaction chamber 400 is, for example, a waferless automatic cleaning process for removing the original coating from the inner wall of the reaction chamber and generating a new coating on the inner wall of the reaction chamber. The waferless automatic cleaning process employs, for example, nitrogen trifluoride to clean inorganic polymers, and oxygen to clean organic polymers.
FIG. 2 is a schematic illustration of the cleaning process of this embodiment with the addition of a helium purge. As shown in fig. 2, the electrostatic chuck 100 includes a tray body 101 and a helium gas pipeline 102, the tray body 101 is used for carrying a wafer, and the helium gas pipeline 102 is located in the tray body 101. The helium pipeline 102 has a plurality of helium pipeline output ports 102a, the plurality of helium pipeline output ports 102a are located on an adsorption surface (i.e. a contact surface of the electrostatic adsorption disk and the wafer) of the disk body 101, and helium is delivered to the reaction chamber 400 through the helium pipeline output ports 102 a.
In this step, the pressure of the helium gas 200 is, for example, greater than the pressure of the reaction chamber 400, that is, the pressure of the helium gas 200 introduced into the reaction chamber 400 through the helium gas pipeline 102 is greater than the pressure of the reaction chamber 400, and further, the pressure of the helium gas 200 is greater than 5% to 10% of the pressure of the reaction chamber 400. When the helium gas 200 is output, the helium gas output from the helium gas pipeline output port 102a and the reaction chamber 400 are kept in a positive pressure state, so that the helium gas 200 is swept to the helium gas pipeline output port 102a, the polymer in the reaction chamber is effectively prevented from entering the helium gas pipeline 102 through the helium gas pipeline output port 102a, and meanwhile, the maintenance period of a machine table is prolonged.
S3: the subsequent batch of wafers is subjected to plasma etching in the reaction chamber 400. In this embodiment, the number of the next wafers is, for example, multiple, but in other embodiments, the number of the next wafers may also be 1.
In summary, in the plasma etching method provided by the invention, after the etching operation of the previous batch of wafers, helium is introduced into the reaction chamber from the helium pipeline of the electrostatic adsorption disc while the reaction chamber is cleaned, and the pressure of the helium is higher than that of the reaction chamber. Meanwhile, the cost of the machine is reduced, the cleaning interval time of the electrostatic adsorption disc is prolonged, the utilization rate of the machine is improved, and the production efficiency is improved.
It is to be understood that while the present invention has been described in conjunction with the preferred embodiments thereof, it is not intended to limit the invention to those embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (10)
1. A method of plasma etching, comprising the steps of:
s1: carrying out plasma etching operation on the previous batch of wafers in a reaction chamber of a plasma etching machine;
s2: cleaning the reaction chamber, and introducing helium gas into the reaction chamber from a helium gas pipeline of an electrostatic adsorption disc, so that a polymer in the reaction chamber is prevented from entering the helium gas pipeline, wherein the electrostatic adsorption disc is arranged in the reaction chamber and is positioned at the bottom of the reaction chamber; and
s3: and carrying out plasma etching operation on the wafers of the next batch in the reaction chamber.
2. The method of plasma etching according to claim 1, wherein in step S2, the pressure of the helium gas is greater than the pressure of the reaction chamber.
3. The method of claim 2, wherein the pressure of the helium gas is greater than 5% to 10% of the pressure of the reaction chamber.
4. The method of plasma etching according to claim 1, wherein the electrostatic chuck comprises: the wafer loading device comprises a disc body for loading wafers and a helium pipeline, wherein the helium pipeline is positioned in the disc body.
5. The method of claim 4, wherein the helium gas conduit has a plurality of helium gas conduit outlets on the adsorption surface of the disk body through which helium gas is delivered to the reaction chamber.
6. The method of claim 1, wherein in step S2, the cleaning process for cleaning the reaction chamber adopts a waferless automatic cleaning process for removing the original coating cleaning from the inner wall of the reaction chamber and generating a new coating on the inner wall of the reaction chamber.
7. The method of claim 6, wherein the waferless automatic cleaning process cleans the inorganic polymer with nitrogen trifluoride and cleans the organic polymer with oxygen.
8. The method of claim 1, wherein the reaction chamber of the etching tool comprises a reaction chamber of a plasma etching tool.
9. The method of claim 1, wherein the number of wafers in the previous batch is plural.
10. The method of plasma etching according to claim 1, wherein the number of the subsequent lot of wafers is plural.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810604623.8A CN108847390B (en) | 2018-06-13 | 2018-06-13 | Plasma etching method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810604623.8A CN108847390B (en) | 2018-06-13 | 2018-06-13 | Plasma etching method |
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| CN108847390A CN108847390A (en) | 2018-11-20 |
| CN108847390B true CN108847390B (en) | 2021-04-02 |
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| CN201810604623.8A Active CN108847390B (en) | 2018-06-13 | 2018-06-13 | Plasma etching method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111383886B (en) * | 2018-12-27 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | System for preventing corrosion of etching gas supply pipeline and plasma reactor operation method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102789960A (en) * | 2011-05-16 | 2012-11-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma cleaning method for plasma device cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7964039B2 (en) * | 2007-09-07 | 2011-06-21 | Imec | Cleaning of plasma chamber walls using noble gas cleaning step |
| JP5364514B2 (en) * | 2009-09-03 | 2013-12-11 | 東京エレクトロン株式会社 | Cleaning method in chamber |
| US9824865B2 (en) * | 2014-03-05 | 2017-11-21 | Lam Research Corporation | Waferless clean in dielectric etch process |
| CN106449366A (en) * | 2016-11-09 | 2017-02-22 | 上海华力微电子有限公司 | Method for solving particle pollution on surface of electrostatic chuck in etching cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102789960A (en) * | 2011-05-16 | 2012-11-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma cleaning method for plasma device cavity |
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