WO2017204088A1

WO2017204088A1 - Substrate processing apparatus and substrate processing method

Info

Publication number: WO2017204088A1
Application number: PCT/JP2017/018735
Authority: WO
Inventors: 昌之林; 亨遠藤; 啓之河原; 敬次岩田; 世根来
Original assignee: 株式会社Ｓｃｒｅｅｎホールディングス
Priority date: 2016-05-25
Filing date: 2017-05-18
Publication date: 2017-11-30
Also published as: CN109155247A; CN109155247B; KR102223972B1; TW201806019A; KR20180128957A; JP2017212335A; TWI643259B; KR20200130515A

Abstract

This substrate processing apparatus includes: a processing chamber; a substrate retention unit which is disposed within the processing chamber, and which retains a substrate; and a first nozzle which has a discharge port for discharging a fluid toward a main surface of the substrate being retained by the substrate retention unit. This substrate processing apparatus executes: a first processing step for subjecting the substrate to a process using a first chemical fluid by discharging the first chemical fluid from the first nozzle toward the main surface of the substrate; a second processing step for subjecting the substrate to a process using a second chemical fluid by supplying the second chemical fluid to the main surface of the substrate; and a water replacement step for replacing what is inside of a chemical fluid pipe with water by supplying water from a first water supply unit to the chemical fluid pipe before and/or after the execution of the first processing step, and/or before and/or after the execution of the second processing step.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a first chemical fluid and a second chemical fluid. Examples of the substrate include a semiconductor wafer, a liquid crystal display substrate, a plasma display substrate, an FED (Field 基板 Emission Display) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, Ceramic substrates, solar cell substrates and the like are included.

In the manufacturing process of a semiconductor device or a liquid crystal display device, a single-wafer type substrate processing apparatus that processes substrates one by one in order to perform processing with a chemical on the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel Sometimes used. The single-wafer type substrate processing apparatus includes a spin chuck that rotates a substrate held substantially horizontally inside a processing chamber partitioned by a partition, and a first chemical solution on the upper surface of the substrate held by the spin chuck. And a second chemical nozzle for supplying the second chemical liquid to the upper surface of the substrate held by the spin chuck. The first chemical liquid nozzle has a discharge port, and a chemical liquid pipe for supplying chemical liquid from a chemical liquid supply source to the first chemical liquid nozzle is connected to the first chemical liquid nozzle.

In such a substrate processing apparatus, there is a case where the first chemical solution and the second chemical solution are a combination in which contact is dangerous (that is, a combination not suitable for contact). When processing using a combination of chemicals that is not suitable for such contact is performed in one processing chamber, a new valve for the other chemical solution is opened when one chemical solution is supplied so as not to contact inside the processing chamber. It has been proposed to execute an interlock process that prohibits the opening of a chemical solution valve when the detected value of the rotation speed of the substrate is outside the rotation speed range (see, for example, Patent Documents 1 and 2).

Japanese Patent No. 4917469 Japanese Patent No. 4917470

However, if the first nozzle is disposed around the spin chuck during the processing using the second chemical fluid (second chemical solution), the atmosphere containing the second chemical fluid is passed through the discharge port. May enter the chemical fluid piping (chemical fluid piping). The entry of the atmosphere containing the second drug fluid into the drug fluid piping may cause contact between the first drug fluid and the second drug fluid.

Accordingly, an object of the present invention is to prevent the occurrence of contact of these chemical fluids inside the chemical fluid piping even if the combination of a plurality of types of chemical fluids used for substrate processing is not suitable for contact. However, it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of completing processing using the plurality of types of chemical fluids in one processing chamber.

The present invention includes a processing chamber, a substrate holding unit that is disposed in the processing chamber and holds a substrate, and a discharge port for discharging a fluid toward the main surface of the substrate held by the substrate holding unit A first fluid nozzle connected to the first nozzle and having an inside communicating with the discharge port, and a first medicine for supplying the first fluid to the medicine fluid pipe A fluid supply unit, a first water supply unit for supplying water to the chemical fluid pipe, and a main surface of a substrate held by the substrate holding unit are different from the first chemical fluid. A second drug fluid supply unit for supplying a second drug fluid, which is a fluid, and the first drug fluid supply unit, the second drug fluid supply unit, and the first water supply unit; And the controller discharges the first drug fluid from the first nozzle toward the main surface of the substrate by supplying the first drug fluid to the drug fluid pipe. Then, a first processing step of applying a treatment using the first chemical fluid to the substrate, and supplying the second chemical fluid to the main surface of the substrate, using the second chemical fluid. Before and / or after execution of the second processing step and / or after execution of the first processing step, and / or before and / or after execution of the second processing step. Provided is a substrate processing apparatus for performing a water replacement step of supplying water from one water supply unit to the chemical fluid pipe and replacing the inside of the chemical fluid pipe with the water.

According to this configuration, the first processing step using the first chemical fluid and the second chemical liquid supply step using the second chemical fluid are performed in the common processing chamber. In the first processing step, the first chemical fluid is discharged from the first nozzle toward the main surface of the substrate by supplying the first chemical fluid to the chemical fluid piping.

In addition, a water replacement step of replacing the inside of the chemical fluid piping with water before and / or after execution of the first processing step and / or before and / or after execution of the second processing step. Executed.

The first chemical fluid may remain inside the chemical fluid piping after the end of the first processing step and / or before the start of the second processing step. In this case, the first drug fluid can be removed from the drug fluid pipe by replacing the inside of the drug fluid pipe with water after the end of the first process step and / or before the start of the second process step. Therefore, at the start of the second processing step, the first chemical fluid does not remain inside the chemical fluid piping. Therefore, even if the second drug fluid enters the drug fluid piping in the second processing step, the second drug fluid does not come into contact with the first drug fluid. Thereby, the contact with the 1st chemical fluid and the 2nd chemical fluid in the inside of chemical fluid piping can be prevented.

Also, the second chemical fluid may adhere to the inside of the chemical fluid piping before the start of the first processing step and / or after the end of the second processing step. In this case, the second drug fluid can be removed from the drug fluid pipe by replacing the inside of the drug fluid pipe with water before the start of the first process step and / or after the end of the second process step. Therefore, at the start of the first processing step, the second chemical fluid does not remain inside the chemical fluid piping. Therefore, even if the first drug fluid is supplied into the drug fluid pipe in the first processing step, the first drug fluid does not come into contact with the second drug fluid. Thereby, the contact with the 1st chemical fluid and the 2nd chemical fluid in the inside of chemical fluid piping can be prevented.

As described above, even if the combination of a plurality of types of chemical fluids (first chemical fluid and second chemical fluid) used for substrate processing is not suitable for contact, those chemicals inside the chemical fluid piping are used. It is possible to provide a substrate processing apparatus capable of completing the processing using the plurality of types of chemical fluids in one processing chamber while preventing the occurrence of fluid contact.

Further, in this specification, “a combination that is not suitable for contact” includes not only “a combination that is dangerous to contact” but also “a combination that generates a product by contact”. It is. “Combination that produces a product by contact” includes a combination of an acid and an alkali.

In one embodiment of the present invention, the substrate holding unit further includes a facing member having a substrate facing surface facing the main surface of the substrate held by the substrate holding unit, and the discharge port of the first nozzle has the substrate facing surface. Is open.

According to this configuration, the facing member that faces the main surface of the substrate is provided, and the discharge port of the first nozzle is opened on the surface of the facing member that faces the substrate. Therefore, in the second processing step, the second chemical fluid may enter the inside of the chemical fluid piping from the discharge port with the supply of the second chemical fluid to the main surface of the substrate. The entry of the atmosphere containing the second drug fluid into the drug fluid piping may cause contact between the first drug fluid and the second drug fluid.

However, before and / or after the execution of the first processing step and / or before and / or after the execution of the second processing step, the inside of the chemical fluid piping is replaced with water. Therefore, even if a counter member facing the main surface of the substrate is provided and the discharge port of the first nozzle is open on the substrate counter surface of the counter member, the first inside the drug fluid piping is provided. Contact between the drug fluid and the second drug fluid can be prevented.

The substrate processing apparatus may further include a suction unit for sucking the inside of the chemical fluid piping. The control device may further control the suction unit to further execute a first suction step of sucking the inside of the drug fluid piping after the water replacement step is completed.

According to this configuration, the inside of the chemical fluid piping is sucked after the water replacement step is completed. By this suction, water is removed from the inside of the chemical fluid piping, and after suction, no water remains inside the chemical fluid piping, or the amount of water remaining inside the chemical fluid piping is small. Thereby, it is possible to suppress or prevent water falling from the first nozzle after the completion of the water replacement step, and hence it is possible to suppress or prevent particle contamination on the main surface of the substrate.

The control device may start the first processing step after the end of the second processing step. The said control apparatus may perform the 1st water replacement process performed prior to a said 2nd process process as the said water replacement process.

According to this configuration, the first water replacement step is executed prior to the second treatment step. Before the start of the second processing step, there is a possibility that the first drug fluid used in the previous process remains in the drug fluid piping. However, by replacing the inside of the drug fluid pipe with water prior to the second process step, the first drug fluid does not remain inside the drug fluid pipe at the start of the second process step. Therefore, even if the second drug fluid enters the drug fluid pipe in the second processing step, it does not contact the first drug fluid inside the drug fluid pipe. Thereby, in a 2nd process process, the contact with the 1st chemical fluid and the 2nd chemical fluid in the inside of chemical fluid piping can be prevented.

Further, the control device may start the first processing step after the second processing step is completed. The control device may execute a second water replacement step executed after the second processing step and prior to the first processing step as the water replacement step.

According to this configuration, after the second processing step, the second water replacement step is executed prior to the first processing step. After the end of the second processing step and before the start of the first processing step, the second chemical fluid used in the second processing step enters the chemical fluid piping, and the inside of the chemical fluid piping May remain. However, by replacing the inside of the drug fluid pipe with water prior to the first process step, the second drug fluid does not remain inside the drug fluid pipe at the start of the first process step. Therefore, even if the first drug fluid is supplied to the drug fluid pipe in the first processing step, it does not come into contact with the second drug fluid. Thereby, in a 1st process process, the contact with the 1st chemical fluid and the 2nd chemical fluid in the inside of chemical fluid piping can be prevented.

In addition, the control device may be disposed on the main surface of the substrate prior to the first processing step so that the second chemical fluid is washed away from the main surface of the substrate with water after the second processing step. You may further perform the 1st water supply process which supplies water. The control device may execute the second water replacement step in the first water supply step.

According to this configuration, in parallel with the first water supply step in which the second chemical fluid is washed away from the main surface of the substrate with water after the second processing step, the inside of the chemical fluid piping is replaced with water. 2 water displacement steps are performed. Thereby, compared with the case where a 1st water supply process is performed at a timing with a 2nd water substitution process, the whole processing time can be shortened.

Further, the substrate processing apparatus is a nozzle different from the first nozzle, and a second nozzle for discharging a fluid toward the main surface of the substrate held by the substrate holding unit; And a second water supply unit for supplying water to the second nozzle. The control device may further control the second water supply unit. The control device starts the first processing step after the end of the second processing step, and after the second processing step and before the start of the first processing step, the first processing step. You may perform the 2nd water supply process which starts discharge of water toward the main surface of the said board | substrate from the said 2nd nozzle by supplying water to 2 nozzles. The control device may start the supply of the first chemical fluid to the chemical fluid piping in the first processing step prior to the end of the second water supply step.

According to this configuration, the first chemical fluid can be discharged from the discharge port immediately after the end of the second water supply. That is, the first treatment process can be started immediately after the end of the second water supply process. Thereby, the whole processing time can be shortened.

Further, the control device may start the first treatment process before the end of the second water supply process.

According to this configuration, the first chemical fluid can be discharged from the discharge port before the end of the second water supply step. Thereby, the whole processing time can be further shortened.

Further, the control device may further execute a second suction step of sucking the inside of the chemical fluid pipe after the discharge of the first chemical fluid from the first nozzle in the first processing step. Good.

Further, the cleaning liquid may contain carbonated water.

Further, the first chemical fluid may contain a sulfuric acid-containing liquid, and the second chemical fluid may contain an organic solvent.

The present invention provides a substrate holding step for holding a substrate in a processing chamber, and supplying a first chemical fluid to a chemical fluid pipe connected to the first nozzle, thereby supplying the main substrate from the first nozzle. A first processing step in which the first chemical fluid is ejected toward the surface and a treatment using the first chemical fluid is performed on the substrate; and the first chemical fluid is a different type of fluid. A second processing step in which a second chemical fluid is supplied to the main surface of the substrate and a treatment using the second chemical fluid is performed on the substrate; and before the execution of the first processing step and / or Alternatively, after the execution and / or before and / or after the execution of the second processing step, the water from the first water supply unit is supplied to the chemical fluid pipe, and the inside of the chemical fluid pipe A water replacement step of replacing the water with the water To provide a substrate processing method.

According to this method, the first processing step using the first chemical fluid and the second chemical liquid supply step using the second chemical fluid are performed in the common processing chamber. In the first processing step, the first chemical fluid is discharged from the first nozzle toward the main surface of the substrate by supplying the first chemical fluid to the chemical fluid piping.

In one embodiment of the present invention, the substrate processing method further includes a first suction step of sucking the inside of the chemical fluid piping after completion of the water replacement step.

According to this method, the inside of the chemical fluid piping is sucked after the water replacement step is completed. By this suction, water is removed from the inside of the chemical fluid piping, and after suction, no water remains inside the chemical fluid piping, or the amount of water remaining inside the chemical fluid piping is small. Thereby, it is possible to suppress or prevent water falling from the first nozzle after the completion of the water replacement step, and hence it is possible to suppress or prevent particle contamination on the main surface of the substrate.

Further, the first processing step may include a step that starts after the end of the second processing step. The water replacement step may include a first water replacement step that is performed prior to the second treatment step.

According to this method, the first water replacement step is performed prior to the second treatment step. Before the start of the second processing step, there is a possibility that the first drug fluid used in the previous process remains in the drug fluid piping. However, by replacing the inside of the drug fluid pipe with water prior to the second process step, the first drug fluid does not remain inside the drug fluid pipe at the start of the second process step. Therefore, even if the second drug fluid enters the drug fluid pipe in the second processing step, it does not contact the first drug fluid inside the drug fluid pipe. Thereby, in a 2nd process process, the contact with the 1st chemical fluid and the 2nd chemical fluid in the inside of chemical fluid piping can be prevented.

Further, the first processing step may include a step that starts after the end of the second processing step. The water replacement step may include a second water replacement step that is performed after the second processing step and prior to the first processing step.

According to this method, after the second treatment step, the second water replacement step is performed prior to the first treatment step. After the end of the second processing step and before the start of the first processing step, the second chemical fluid used in the second processing step enters the chemical fluid piping, and the inside of the chemical fluid piping May remain. However, by replacing the inside of the drug fluid pipe with water prior to the first process step, the second drug fluid does not remain inside the drug fluid pipe at the start of the first process step. Therefore, even if the first drug fluid is supplied to the drug fluid pipe in the first processing step, it does not come into contact with the second drug fluid. Thereby, in a 1st process process, the contact with the 1st chemical fluid and the 2nd chemical fluid in the inside of chemical fluid piping can be prevented.

In addition, the substrate processing method may include the main surface of the substrate prior to the first processing step so that the second chemical fluid is washed away from the main surface of the substrate with water after the second processing step. A first water supply step for supplying water to the liquid may be further included. The first water supply step may include the second water replacement step.

According to this method, in parallel with the first water supply step in which the second chemical fluid is washed away from the main surface of the substrate with water after the second processing step, the inside of the chemical fluid piping is replaced with water. 2 water displacement steps are performed. Thereby, compared with the case where a 1st water supply process is performed at a timing with a 2nd water substitution process, the whole processing time can be shortened.

Further, the first processing step may include a step that starts after the end of the second processing step. In the substrate processing method, after the second processing step and prior to the first processing step, the second nozzle which is a nozzle different from the first nozzle is directed to the main surface of the substrate. A second water supply step for discharging water may be further included. In the first treatment step, the supply of the first chemical fluid to the chemical fluid piping may be started prior to the end of the second water supply step.

According to this method, the first chemical fluid can be discharged from the discharge port immediately after the end of the second water supply step. That is, the first treatment process can be started immediately after the end of the second water supply process. Thereby, the whole processing time can be shortened.

Further, the substrate processing method may further include a second water supply step of supplying water from the second nozzle to the main surface of the substrate after the second processing step. The substrate processing method may execute the first processing step in parallel with the second water supply step.

According to this method, the first chemical fluid can be discharged from the discharge port before the end of the second water supply step. Thereby, the whole processing time can be further shortened.

The substrate processing method further includes a second suction step of sucking the inside of the chemical fluid piping after the discharge of the first chemical fluid from the first nozzle in the first processing step. Also good.

Further, the cleaning liquid may contain carbonated water.

The above-described or other objects, features, and effects of the present invention will be clarified by the following description of embodiments with reference to the accompanying drawings.

FIG. 1 is an illustrative plan view for explaining an internal layout of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2A is a schematic cross-sectional view for explaining a configuration example of a processing unit provided in the substrate processing apparatus. FIG. 2B is a diagram for specifically explaining a configuration around a counter member included in the processing unit. FIG. 2C is an illustrative cross-sectional view showing an enlarged configuration example of the lower portion of the processing unit. FIG. 3 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus. FIG. 4 is a flowchart for explaining a first substrate processing example by the processing unit. 5A-5B are schematic diagrams for explaining the first substrate processing example. FIG. 5C-5D are schematic diagrams for explaining the process following FIG. 5B. 5E-5F are schematic diagrams for explaining the process following FIG. 5D. FIGS. 5G to 5H are schematic diagrams for explaining the process following FIG. 5F. FIG. 6 is an illustrative view for explaining a monitoring state by the first liquid detection sensor and the second liquid detection sensor in the main process of the first substrate processing example. FIG. 7 is a view for explaining hard interlock in the first substrate processing example. FIG. 8 is an illustrative view for explaining a second substrate processing example by the processing unit. FIG. 9 is an illustrative view for explaining a third substrate processing example by the processing unit.

FIG. 1 is an illustrative plan view for explaining an internal layout of a substrate processing apparatus 1 according to a first embodiment of the present invention. The substrate processing apparatus 1 is a single wafer processing apparatus that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 that process a substrate W with a processing liquid, a load port LP on which a carrier C that houses a plurality of substrates W processed by the processing unit 2 is placed, a load port It includes transfer robots IR and CR that transfer the substrate W between the LP and the processing unit 2, and a control device 3 that controls the substrate processing apparatus 1. The transfer robot IR transfers the substrate W between the carrier C and the substrate transfer robot CR. The substrate transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example.

FIG. 2A is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.

The processing unit 2 holds the box-shaped processing chamber 4 and a single substrate W in the processing chamber 4 in a horizontal posture, and rotates the substrate W about a vertical rotation axis A1 passing through the center of the substrate W. A spin chuck (substrate holding unit) 5 and a facing member 7 having a substrate facing surface 6 facing the upper surface (main surface) of the substrate W held by the spin chuck 5 are included. The opposing member 7 includes a first nozzle 9 having a first discharge port (discharge port) 8 for discharging a fluid toward the central portion of the upper surface of the substrate W held by the spin chuck 5, and a spin chuck. A second nozzle 11 having a second discharge port 10 for discharging a fluid toward the center of the upper surface of the substrate W held by the substrate 5, and a liquid organic solvent (low An organic solvent supply unit (first chemical fluid supply unit) 12 for supplying isopropyl alcohol (IPA), which is an example of an organic solvent having surface tension, to the first nozzle 9, and a second nozzle 11 In addition, a rinsing water supply unit (second water supply unit) 13 for supplying water (for example, carbonated water) as a rinsing liquid and a second chemical on the upper surface of the substrate W held by the spin chuck 5 fluid A sulfuric acid-containing liquid supply unit (second chemical fluid supply unit) 14 for supplying a sulfuric acid / hydrogen peroxide mixture (SPM) as an example of the sulfuric acid-containing liquid, and a spin chuck A cleaning chemical solution supply unit 15 for supplying SC1 (a liquid containing NH ₄ OH and H ₂ O ₂ ) as an example of a cleaning chemical solution to the upper surface of the substrate W held by 5, and a cylindrical shape surrounding the spin chuck 5 And the processing cup 16.

The processing chamber 4 includes a box-shaped partition wall 18 that houses the spin chuck 5 and nozzles, and an FFU (fan filter) as a blower unit that sends clean air (air filtered by a filter) from the upper part of the partition wall 18 into the partition wall 18. -Unit) 19 is included.

The FFU 19 is disposed above the partition wall 18 and attached to the ceiling of the partition wall 18. The FFU 19 sends clean air downward from the ceiling of the partition wall 18 into the processing chamber 4. Further, an exhaust liquid pipe 81 is connected to the bottom of the processing cup 16, and the exhaust liquid pipe 81 is disposed in the processing chamber 4 toward an exhaust processing facility provided in a factory where the substrate processing apparatus 1 is installed. Deriving gas. Therefore, a downflow (downflow) that flows downward in the processing chamber 4 is formed by the FFU 19 and the exhaust liquid pipe 81. The processing of the substrate W is performed in a state where a down flow is formed in the processing chamber 4.

As the spin chuck 5, a clamping chuck that holds the substrate W horizontally with the substrate W held in the horizontal direction is employed. Specifically, the spin chuck 5 includes a spin motor 22, a lower spin shaft 23 integrated with a drive shaft of the spin motor 22, and a disk-like shape attached to the upper end of the lower spin shaft 23 substantially horizontally. A spin base 24.

On the upper surface of the spin base 24, a plurality of (three or more, for example, six) clamping members 25 are disposed on the peripheral edge thereof. The plurality of clamping members 25 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the peripheral edge of the upper surface of the spin base 24.

Further, the spin chuck 5 is not limited to a sandwich type, and for example, the substrate W is held in a horizontal posture by vacuum-sucking the back surface of the substrate W, and further rotated around a vertical rotation axis in that state. By doing so, a vacuum suction type (vacuum chuck) that rotates the substrate W held on the spin chuck 5 may be employed.

FIG. 2B is a diagram for specifically explaining the configuration around the opposing member 7 included in the processing unit 2.

As shown in FIGS. 2A and 2B, the facing member 7 includes a blocking plate 26 and an upper spin shaft 27 provided coaxially with the blocking plate 26. The blocking plate 26 has a disk shape having a diameter substantially equal to or larger than that of the substrate W. The substrate facing surface 6 forms a lower surface of the blocking plate 26 and has a circular shape facing the entire upper surface of the substrate W.

In the central part of the substrate facing surface 6, a cylindrical through hole 28 is formed that vertically penetrates the blocking plate 26 and the upper spin shaft 27. The inner peripheral wall of the through hole 28 is partitioned by a cylindrical surface. The first nozzle 9 and the second nozzle 11 are inserted into the through hole 28. The first and

second nozzles

9 and 11 extend in the vertical direction along the rotation axis A2 (coaxial with the rotation axis A1) of the upper spin shaft 27, respectively.

Specifically, a central axis nozzle 29 extending vertically along the rotation axis A2 of the blocking plate 26 is inserted into the through hole 28. As shown in FIG. 2B, the central axis nozzle 29 includes first and

second nozzles

9 and 11 and a cylindrical casing 30 that surrounds the first and

second nozzles

9 and 11. In this embodiment, each of the first and

second nozzles

9 and 11 is an inner tube. The first discharge port 8 is formed at the lower end of the first nozzle 9. The second discharge port 10 is formed at the lower end of the second nozzle 11. The casing 30 extends in the vertical direction along the rotation axis A2. The casing 30 is inserted into the through hole 28 in a non-contact state. Therefore, the inner periphery of the blocking plate 26 surrounds the outer periphery of the casing 30 with a gap in the radial direction.

As shown in FIG. 2A, the upper spin shaft 27 is coupled to a shield plate rotating unit 31. The blocking plate rotating unit 31 rotates the upper spin shaft 27 together with the blocking plate 26 around the rotation axis A2. A shield plate lifting / lowering unit 32 including an electric motor, a ball screw, and the like is coupled to the shield plate 26. The blocking plate lifting / lowering unit 32 moves the blocking plate 26 together with the central axis nozzle 29 in the vertical direction. The blocking plate lifting / lowering unit 32 includes a proximity position (see FIG. 5A and the like) where the substrate facing surface 6 of the blocking plate 26 is close to the upper surface of the substrate W held by the spin chuck 5 and a retreat provided above the proximity position. Between the positions (see FIG. 2A, FIG. 5G, etc.), the blocking plate 26 and the central shaft nozzle 29 are moved up and down. The shield plate lifting / lowering unit 32 can hold the shield plate 26 at each position between the proximity position and the retracted position.

Further, in relation to the blocking plate 26, a blocking plate proximity position sensor 33 (not shown in FIGS. 2A to 2C) for detecting the arrangement of the blocking plate 26 in the proximity position is provided.

As shown in FIG. 2B, the organic solvent supply unit 12 is connected to the first nozzle 9, and an organic solvent pipe (chemical fluid pipe) 34 whose inside communicates with the first discharge port 8 and an organic solvent pipe 34. A first organic solvent valve 35 that opens and closes the organic solvent, and a second organic solvent valve that opens and closes the organic solvent interposed in the organic solvent pipe 34 downstream of the first organic solvent valve 35. 36 and a valve closing sensor 37 for detecting that the first organic solvent valve 35 is in a closed state.

As shown in FIG. 2B, a first water pipe 39 is provided at a first branch position 38 set between the first organic solvent valve 35 and the second organic solvent valve 36 in the organic solvent pipe 34. Branch connected. In the following description, the downstream portion 40 downstream of the first branch position 38 in the organic solvent pipe 34 is referred to as “organic solvent downstream portion 40”. The upstream portion 41 upstream of the first branch position 38 in the organic solvent pipe 34 is referred to as “organic solvent upstream portion 41”. In this embodiment, the first branch position 38 is set at a position close to the upper end of the organic solvent pipe 34. Therefore, in the state where the organic solvent does not exist in the organic solvent downstream portion 40, the time until the organic solvent reaches the second nozzle 11 (second discharge port 10) after opening the first organic solvent valve 35 is Longer (eg about 3 seconds).

When the first organic solvent valve 35 is opened, the organic solvent from the organic solvent supply source is supplied to the second organic solvent valve 36. When the second organic solvent valve 36 is opened in this state, the organic solvent supplied to the second organic solvent valve 36 is discharged from the first discharge port 8 toward the center of the upper surface of the substrate W.

As shown in FIG. 2B, in the organic solvent downstream portion 40, the predetermined first detection position 42 upstream of the position where the second organic solvent valve 36 is interposed is located inside the organic solvent downstream portion 40. A first liquid detection sensor 43 for detecting the presence or absence of the liquid is disposed. The first liquid detection sensor 43 detects the presence / absence of liquid inside the organic solvent pipe 34 at the first detection position 42, and sends a signal corresponding to the detection result to the control device 3. When the tip of the liquid in the organic solvent pipe 34 is advanced from the first detection position 42 (positioned on the first nozzle 9 side), the liquid is detected by the first liquid detection sensor 43. Is done. When the tip of the liquid inside the organic solvent pipe 34 is retracted from the first detection position 42 (positioned on the organic solvent supply source side), depending on the first liquid detection sensor 43, the liquid is Not detected.

As shown in FIG. 2B, in the organic solvent downstream portion 40, the predetermined second detection position 44 on the downstream side of the position where the second organic solvent valve 36 is interposed is located inside the organic solvent downstream portion 40. A second liquid detection sensor 45 for detecting the presence or absence of the liquid is disposed. The second liquid detection sensor 45 detects the presence or absence of the liquid inside the organic solvent pipe 34 at the second detection position 44 and sends a signal corresponding to the detection result to the control device 3. When the tip of the liquid in the organic solvent pipe 34 is advanced from the second detection position 44 (positioned on the first nozzle 9 side), the liquid is detected by the second liquid detection sensor 45. Is done. When the tip of the liquid in the organic solvent pipe 34 is retracted from the second detection position 44 (positioned on the organic solvent supply source side), depending on the second liquid detection sensor 45, the liquid may be Not detected.

Each of the first liquid detection sensor 43 and the second liquid detection sensor 45 is, for example, a fiber sensor for liquid detection (for example, FU95S manufactured by Keyence Corporation), and is directly attached to the outer peripheral wall of the organic solvent pipe 34. Or they are placed close together. The first liquid detection sensor 43 and / or the second liquid detection sensor 45 may be constituted by, for example, a capacitive sensor.

As shown in FIG. 2B, water (for example, carbonated water) from a water supply source is supplied to the first water pipe 39. A first water valve 46 for opening and closing the first water pipe 39 is interposed in the middle of the first water pipe 39. When the first water valve 46 is opened, it is supplied from the first water pipe 39 to the organic solvent downstream portion 40. In addition, when the first water valve 46 is closed, the supply of water from the first water pipe 39 to the organic solvent downstream portion 40 is stopped. The water supplied from the first water pipe 39 to the organic solvent pipe 34 is, for example, carbonated water. The first water pipe 39 and the first water valve 46 are included in a replacement water supply unit (first water supply unit) 47.

As shown in FIG. 2B, the second branch position 48 set in the middle of the first water pipe 39 (that is, between the first branch position 38 and the first water valve 46) is suctioned. A pipe 49 is branched and connected. In the following description, the downstream portion 50 downstream of the second branch position 48 in the first water pipe 39 is referred to as “water downstream portion 50”.

As shown in FIG. 2B, a suction valve 51 for opening and closing the suction pipe 49 is interposed in the middle of the suction pipe 49. A suction device 52 is connected to the tip of the suction pipe 49. For example, as shown in FIG. 2A, the suction device 52 includes a vacuum generator 53 and a drive valve 54 for operating the vacuum generator 53. The suction device 52 is not limited to a device that generates a suction force by generating a vacuum, and may be an aspirator, for example.

As shown in FIG. 2B, in the operating state of the suction device 52 (vacuum generator 53), the first organic solvent valve 35 and the first water valve 46 are closed and the second organic solvent valve 36 is opened. When the suction valve 51 is opened in the state, the function of the suction device 52 is activated, the inside of the organic solvent downstream portion 40 and the water downstream portion 50 is exhausted, and the organic solvent downstream portion 40 and the water downstream portion 50 are exhausted. The liquid (water or organic solvent) contained in is drawn into the suction pipe 49. The suction device 52 and the suction valve 51 are included in the suction unit 55.

As shown in FIG. 2B, the rinsing water supply unit 13 is connected to the second nozzle 11, and opens and closes the second water pipe 56 that communicates with the second discharge port 10 and the second water pipe 56. And the 2nd water valve 57 which switches supply and stop of supply of the water from the 2nd water piping 56 to the 2nd nozzle 11 is included. When the second water valve 57 is opened, water from the water supply source is supplied to the second water pipe 56 and discharged from the second discharge port 10 toward the center of the upper surface of the substrate W.

As shown in FIG. 2A, the processing unit 2 further includes an inert gas pipe 58 that supplies an inert gas to a cylindrical space between the outer periphery of the casing 30 and the inner periphery of the shielding plate 26, and an inert gas. And an inert gas valve 59 interposed in the pipe 58. When the inert gas valve 59 is opened, the inert gas from the inert gas supply source passes between the outer periphery of the casing 30 and the inner periphery of the blocking plate 26 and is discharged downward from the center of the lower surface of the blocking plate 26. Is done. Therefore, when the inert gas valve 59 is opened in a state where the shielding plate 26 is disposed in the proximity position, the inert gas discharged from the center of the lower surface of the shielding plate 26 is the upper surface of the substrate W and the substrate of the shielding plate 26. The space between the opposing surfaces 6 spreads outward (in the direction away from the rotation axis A1), and the air between the substrate W and the shielding plate 26 is replaced with an inert gas. The inert gas flowing through the inert gas pipe 58 is, for example, nitrogen gas. The inert gas is not limited to nitrogen gas, but may be other inert gas such as helium gas or argon gas.

As shown in FIG. 2A, the sulfuric acid-containing liquid supply unit 14 includes a sulfuric acid-containing liquid nozzle 60, a sulfuric acid-containing liquid pipe 61 connected to the sulfuric acid-containing liquid nozzle 60, and a sulfuric acid-containing liquid pipe 61 interposed in the sulfuric acid-containing liquid pipe 61. A liquid valve 62 and a first nozzle moving unit 63 that moves the sulfuric acid-containing liquid nozzle 60 are included. The first nozzle moving unit 63 includes a motor and the like. The first nozzle moving unit 63 is coupled with a nozzle retraction sensor 64 for detecting that the sulfuric acid-containing liquid nozzle 60 is in the retreat position.

When the first nozzle moving unit 63 is constituted by, for example, a stepping motor, the moving amount of the sulfuric acid-containing liquid nozzle 60 output from the motor control unit for controlling the stepping motor (the swing angle of the arm) ), The nozzle retract sensor 64 can detect whether or not the sulfuric acid-containing liquid nozzle 60 is in the retract position.

The sulfuric acid-containing liquid nozzle 60 is, for example, a straight nozzle that discharges liquid in a continuous flow state. The sulfuric acid-containing liquid pipe 61 is supplied with a sulfuric acid-containing liquid from a sulfuric acid-containing liquid supply source. In this embodiment, the sulfuric acid-containing liquid pipe 61 is supplied with a high temperature (for example, about 170 ° C. to about 200 ° C.) sulfuric acid / hydrogen peroxide mixture (SPM) as a sulfuric acid-containing liquid. The The SPM heated to the high temperature by the reaction heat between sulfuric acid and hydrogen peroxide is supplied to the sulfuric acid-containing liquid pipe 61.

When the sulfuric acid-containing liquid valve 62 is opened, the high-temperature SPM supplied from the sulfuric acid-containing liquid pipe 61 to the sulfuric acid-containing liquid nozzle 60 is discharged downward from the sulfuric acid-containing liquid nozzle 60. When the sulfuric acid-containing liquid valve 62 is closed, the discharge of high-temperature SPM from the sulfuric acid-containing liquid nozzle 60 is stopped. The first nozzle moving unit 63 includes a processing position where the high-temperature SPM discharged from the sulfuric acid-containing liquid nozzle 60 is supplied to the upper surface of the substrate W, and the sulfuric acid-containing liquid nozzle 60 on the side of the spin chuck 5 in plan view. The sulfuric acid-containing liquid nozzle 60 is moved between the retracted position and the retracted position.

As shown in FIG. 2A, the cleaning chemical liquid supply unit 15 includes a cleaning chemical liquid nozzle 65, a cleaning chemical liquid pipe 66 connected to the cleaning chemical liquid nozzle 65, a cleaning chemical liquid valve 67 interposed in the cleaning chemical liquid pipe 66, and a cleaning And a second nozzle moving unit 68 that moves the chemical nozzle 65. The cleaning chemical liquid nozzle 65 is, for example, a straight nozzle that discharges liquid in a continuous flow state. The cleaning chemical liquid pipe 66 is supplied with a cleaning chemical liquid (for example, SC1) from a cleaning chemical liquid supply source.

When the cleaning chemical solution valve 67 is opened, the SC 1 supplied from the cleaning chemical solution pipe 66 to the cleaning chemical solution nozzle 65 is discharged downward from the cleaning chemical solution nozzle 65. When the cleaning chemical liquid valve 67 is closed, the discharge of the cleaning chemical liquid from the cleaning chemical liquid nozzle 65 is stopped. The second nozzle moving unit 68 includes a processing position where SC1 discharged from the cleaning chemical solution nozzle 65 is supplied to the upper surface of the substrate W, and a retreat position where the cleaning chemical solution nozzle 65 is retracted to the side of the spin chuck 5 in plan view. Between them, the cleaning chemical nozzle 65 is moved. Further, the second nozzle moving unit 68 includes a central position where the cleaning chemical liquid discharged from the cleaning chemical liquid nozzle 65 lands on the central portion of the upper surface of the substrate W, and the cleaning chemical liquid discharged from the cleaning chemical liquid nozzle 65 on the substrate W. The cleaning chemical liquid nozzle 65 is moved horizontally between the peripheral position where the liquid is deposited on the peripheral surface of the upper surface. The center position and the peripheral position are both processing positions.

FIG. 2C is an illustrative sectional view showing an enlarged configuration example of the lower part of the processing unit 2.

As shown in FIGS. 2A and 2C, the processing cup 16 surrounds the spin chuck 5 and receives first and

second guards

71 and 72 for receiving the processing liquid (cleaning chemical liquid and rinsing liquid) scattered around the substrate W. And a guard lifting / lowering unit 73 that lifts and lowers the

individual guards

71 and 72 independently. The guard lifting / lowering unit 73 lifts and lowers the

individual guards

71 and 72 independently. Note that the guard lifting unit 73 includes a ball screw mechanism, for example.

The processing cup 16 can be accommodated so as to overlap in the vertical direction, and when the guard lifting / lowering unit 73 moves up and down at least one of the two

guards

71 and 72, the processing cup 16 is expanded and accommodated.

The inner first guard 71 surrounds the periphery of the spin chuck 5 and has a substantially rotationally symmetric shape with respect to the rotation axis A 1 of the substrate W by the spin chuck 5. As shown in FIG. 2C, the first guard 71 has an annular bottom 74 in plan view, a cylindrical inner wall 75 rising upward from the inner periphery of the bottom 74, and an upper periphery from the outer periphery of the bottom 74. Are integrally provided with a cylindrical outer wall portion 76 that rises upward and a cylindrical guide portion 77 that rises upward from a part of the bottom 74 corresponding to the inner peripheral edge and the outer peripheral edge.

The guide portion 77 has a cylindrical main body portion 78 rising from the bottom portion 74, and a cylindrical upper end portion 79 extending obliquely upward on the center side (in the direction approaching the rotation axis A1) while drawing a smooth arc from the upper end of the main body portion 78. Including.

A first drain groove 80 for collecting and draining the processing liquid (sulfuric acid-containing liquid, cleaning chemical liquid, and water) used for processing the substrate W is defined between the inner wall portion 75 and the guide portion 77. ing. An exhaust liquid pipe 81 extending from a negative pressure source (not shown) is connected to the lowest portion of the bottom of the first drain groove 80. As a result, the inside of the first drainage groove 80 is forcibly exhausted, and the treatment liquid collected in the first drainage groove 80 and the atmosphere in the first drainage groove 80 are changed to the exhaust liquid pipe 81. It is discharged through. The processing liquid discharged together with the atmosphere is separated from the atmosphere by a gas-liquid separator 97 interposed in the middle of the exhaust liquid pipe 81. A plurality of drainage branch pipes (sulfuric acid-containing liquid branch pipes 82, cleaning chemical liquid branch pipes 83, and water branch pipes 84) are connected to the exhaust liquid pipe 81 through a gas-liquid separator 97. A valve 85 is connected. Each drainage branch valve 85 includes a second valve closing sensor 95 that detects that the drainage branch valve 85 is closed.

In the sulfuric acid-containing liquid process (step S3 in FIG. 4) to be described later, only the drainage branch valve 85 for the sulfuric acid-containing liquid branch pipe 82 among the drainage branch valves 85 is opened and flows through the exhaust liquid pipe 81. The processing liquid to be supplied is supplied to the branch pipe 82 for sulfuric acid-containing liquid, and then sent to a processing apparatus (not shown) for draining the sulfuric acid-containing liquid.

Further, in the first and second rinsing steps (step S4 and step S6 in FIG. 4) described later, only the drainage branch valve 85 for the water branch pipe 84 among the drainage branch valves 85 is opened. The processing liquid flowing through the exhaust liquid pipe 81 is supplied to the water branch pipe 84 and then sent to a processing apparatus (not shown) for draining water.

Further, in the cleaning chemical solution process (step S5 in FIG. 4) to be described later, only the drainage branch valve 85 for the cleaning chemical solution branch pipe 83 among the drainage branch valve 85 is opened and flows through the exhaust liquid pipe 81. The processing liquid to be supplied is supplied to the branch pipe 83 for cleaning chemical liquid, and then sent to a processing apparatus (not shown) for draining the cleaning chemical liquid.

Further, a space between the guide portion 77 and the outer wall portion 76 is a second drainage groove 86 for collecting and collecting the organic solvent used for processing the substrate W. In the second drainage groove 86, for example, one end of an exhaust pipe 87 is connected to the bottom. Thereby, the inside of the second drainage groove 86 is forcibly exhausted, and the atmosphere in the second drainage groove 86 is exhausted through the exhaust pipe 87.

The other end of the exhaust pipe 87 is connected to a negative pressure source (not shown). An exhaust valve 101 for opening and closing the exhaust pipe 87 is interposed in the exhaust pipe 87. The exhaust valve 101 is provided with a valve open sensor 21 that detects that the exhaust valve 101 is in an open state.

The outer second guard 72 has a substantially rotationally symmetric shape with respect to the rotation axis A1. The second guard 72 surrounds the spin chuck 5 on the outside of the guide portion 77 of the first guard 71. An opening 89 having a diameter larger than that of the substrate W held by the spin chuck 5 is formed at the upper end 88 of the second guard 72, and the upper end 90 of the second guard 72 is an opening that defines the opening 89. It is the end.

The second guard 72 has a lower end 91 that is coaxial with the guide portion 77, and a cylindrical shape that extends obliquely upward from the upper end of the lower end 91 while drawing a smooth arc on the center side (in the direction approaching the rotation axis A1). It has the upper end part 88 and the folding | turning part 92 formed by folding down the front-end | tip part of the upper end part 88 below.

The lower end portion 91 is located on the second drainage groove 86 and is formed to have a length that can be accommodated in the second drainage groove 86 with the first guard 71 and the second guard 72 being closest to each other. Has been. The upper end portion 88 is provided so as to overlap the upper end portion 79 of the guide portion 77 of the first guard 71 in the vertical direction, and the first guard 71 and the second guard 72 are in the state of being closest to each other. It is formed so as to be close to the upper end 79 of the portion 77 with a very small gap. The folded portion 92 is formed so as to overlap the upper end portion 79 of the guide portion 77 in the horizontal direction in a state where the first guard 71 and the second guard 72 are closest to each other.

As shown in FIG. 2A, the guard lifting / lowering unit 73 includes each guard between an upper position where the upper end of the guard is located above the substrate W and a lower position where the upper end of the guard is located below the substrate W. 71 and 72 are moved up and down. The guard lifting / lowering unit 73 can hold the

guards

71 and 72 at an arbitrary position between the upper position and the lower position. The supply of the processing liquid to the substrate W and the drying of the substrate W are performed in a state where any one of the

guards

71 and 72 is opposed to the peripheral end surface of the substrate W.

When the inner first guard 71 is opposed to the peripheral end surface of the substrate W, as shown in FIG. 5A and the like, both the first and

second guards

71 and 72 are arranged at the upper position. In this state, the folded portion 92 overlaps the upper end portion 79 of the guide portion 77 in the horizontal direction.

In relation to the first guard 71, a guard upper position sensor 93 for detecting the upper position of the first guard 71 and a guard for detecting the upper position of the first guard 71. A lower position sensor 94 is provided.

On the other hand, when the outer second guard 72 is opposed to the peripheral end surface of the substrate W, as shown in FIG. 2A, FIG. 71 is arranged at the lower position.

FIG. 3 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.

The control device 3 is configured using, for example, a microcomputer. The control device 3 includes an arithmetic unit such as a CPU, a fixed memory device, a storage unit such as a hard disk drive, and an input / output unit. The storage unit stores a program executed by the arithmetic unit.

The operation of the second

nozzle moving units

63 and 68, the blocking plate rotating unit 31, the blocking plate lifting / lowering unit 32, the guard lifting / lowering unit 73 and the like are controlled. The control device 3 includes a first organic solvent valve 35, a second organic solvent valve 36, a first water valve 46, a suction valve 51, a drive valve 54, a second water valve 57, an inert gas valve 59, The sulfuric acid-containing liquid valve 62, the cleaning chemical liquid valve 67, the drainage branch valve 85, and the like are opened and closed. Further, the control device 3 includes a detection output of the first valve opening sensor 21, a detection output of the blocking plate proximity position sensor 33, a detection output of the valve closing sensor 37, a detection output of the first liquid detection sensor 43, and a second output. The detection output of the liquid detection sensor 45, the detection output of the nozzle retraction sensor 64, the detection output of the guard upper position sensor 93, the detection output of the guard lower position sensor 94, the detection output of the second valve closing sensor 95, and the like are input. It is like that.

FIG. 4 is a flowchart for explaining a first substrate processing example by the processing unit 2. 5A to 5H are schematic views for explaining a first substrate processing example.

Hereinafter, a first substrate processing example will be described with reference to FIGS. 2A to 4. 5A to 5H will be referred to as appropriate. The first substrate processing example is a resist removal process for removing the resist formed on the upper surface of the substrate W. As described below, in the first substrate processing example, the sulfuric acid-containing liquid process S3 for processing the substrate W using a sulfuric acid-containing liquid such as SPM, and the substrate W is processed using a liquid organic solvent such as IPA. And organic solvent step S7. The sulfuric acid-containing liquid and the organic solvent are a combination of a chemical fluid (chemical liquid or gas containing a chemical component) that is dangerous to contact (in this case, a rapid reaction).

When the resist removal processing is performed on the substrate W by the processing unit 2, the substrate W after the ion implantation processing at a high dose is carried into the processing chamber 4 (step S1 in FIG. 4). It is assumed that the loaded substrate W has not been subjected to a process for ashing the resist. A fine pattern with a fine and high aspect ratio is formed on the surface of the substrate W.

Specifically, in the control device 3, the opposing member 7 (that is, the blocking plate 26 and the central axis nozzle 29) is retracted to the retracted position, and all the moving nozzles (that is, the sulfuric acid-containing liquid nozzle 60 and the cleaning chemical liquid nozzle 65). Is retracted from above the spin chuck 5 and the first and

second guards

71 and 72 are lowered to the lower position. As a result, the upper ends of the first and

second guards

71 and 72 are both disposed below the holding position of the substrate W. In this state, when the hand H (see FIG. 1) of the substrate transfer robot CR (see FIG. 1) holding the substrate W is caused to enter the inside of the processing chamber 4, the substrate W becomes its surface (resist formation surface). Is delivered to the spin chuck 5 with the side facing upward. Thereafter, the substrate W is held on the spin chuck 5 (substrate holding step).

Thereafter, the control device 3 starts the rotation of the substrate W by the spin motor 22. The substrate W is raised to a predetermined liquid processing speed (within a range of 1 to 500 rpm, for example, about 100 rpm) and maintained at the liquid processing speed. Further, the control device 3 controls the guard lifting / lowering unit 73 to raise the first and

second guards

71 and 72 to the upper position, respectively, so that the first guard 71 faces the peripheral end surface of the substrate W.

When the rotation speed of the substrate W reaches the liquid processing speed, a neutralization step (step S2 in FIG. 4) is performed in which carbonated water is supplied to the upper surface of the substrate W to neutralize the substrate W. Specifically, the control device 3 opens the second water valve 57. Thereby, as shown in FIG. 5A, carbonated water is discharged from the second discharge port 10 of the second nozzle 11 toward the center of the upper surface of the substrate W. The carbonated water discharged from the second nozzle 11 is deposited on the center of the upper surface of the substrate W and flows on the upper surface of the substrate W toward the peripheral portion of the substrate W under the centrifugal force generated by the rotation of the substrate W.

Further, in this embodiment, the static elimination step S2 is performed not only by discharging carbonated water from the second nozzle 11, but also by discharging carbonated water from the first discharge port 8 of the first nozzle 9. Realized. That is, the charge removal step S2 includes a first water replacement step T1 that replaces the inside of the organic solvent pipe 34 with carbonated water. Specifically, the control device 3 synchronizes with the start of the static elimination step S2 while opening the second organic solvent valve 36 and closing the first organic solvent valve 35 and the suction valve 51, and the first water valve Open 46. Thereby, carbonated water from the first water pipe 39 is supplied to the organic solvent downstream portion 40. If the IPA droplets used in the previous resist removal process adhere to the inner wall of the organic solvent downstream portion 40, the IPA droplets are replaced with carbonated water. The carbonated water supplied to the downstream portion 40 of the organic solvent is discharged from the first nozzle 9 and lands on the center of the upper surface of the substrate W, receives the centrifugal force due to the rotation of the substrate W, and moves on the upper surface of the substrate W. It flows toward the peripheral edge of the substrate W. Also, when the IPA atmosphere used in the previous resist removal process is mixed in the pipe of the organic solvent downstream portion 40, it is removed by carbonated water.

The carbonated water supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is received by the inner wall of the first guard 71. The carbonated water flowing down along the inner wall of the first guard 71 is collected in the first drain groove 80 and then guided to the exhaust pipe 81. In the static elimination step S2, the drainage branch valve 85 for the water branch pipe 84 is opened, and the drainage branch valve 85 for the sulfuric acid-containing liquid branch pipe 82 and the drainage branch valve 85 for the cleaning chemical liquid branch pipe 83 are opened. By closing, the flow destination of the liquid passing through the exhaust pipe 81 is set to the water branch pipe 84. Therefore, in the static elimination process S2, the carbonated water led to the exhaust liquid pipe 81 is led to a treatment device (not shown) for draining the carbonated water through the water branch pipe 84. If the IPA droplet used in the previous resist removal process adheres to the inner wall of the first guard 71, the first drain groove 80, and the exhaust pipe 81, this IPA droplet is used. Is washed away with carbonated water.

By supplying carbonated water to the upper surface of the substrate W, a liquid film of carbonated water is formed on the upper surface of the substrate W. When the carbonated liquid film comes into contact with the upper surface of the substrate W, the substrate W held by the spin chuck 5 is neutralized. In this embodiment, since the static elimination step S2 includes the first water replacement step T1, the entire process of removing the resist is compared with the case where the first water replacement step T1 is performed at a different timing from the static elimination step S2. Time can be shortened.

Then, when a predetermined time has elapsed from the start of discharging carbonated water, the control device 3 closes the first water valve 46 while maintaining the second water valve 57 open, as shown in FIG. 5B. The discharge of carbonated water from the first nozzle 9 is stopped while maintaining the discharge of carbonated water from the second nozzle 11.

After the discharge of carbonated water from the first nozzle 9 is stopped, a first water suction step T2 (first suction step) for sucking carbonated water in the organic solvent pipe 34 is executed. In the first water suction step T2, the carbonated water present in the organic solvent pipe 34 after the first water replacement step T1 is sucked by the suction unit 55.

Specifically, the control device 3 opens the second organic solvent valve 36 and closes the first organic solvent valve 35 and the first water valve 46 after the completion of the first water replacement step T1. Open the valve 51. Thereby, the inside of the organic solvent downstream portion 40 and the water downstream portion 50 is exhausted, and as shown in FIG. 5B, the carbonated water present in the organic solvent downstream portion 40 and the water downstream portion 50 is sucked. It is drawn into the pipe 49 (suction). The suction of carbonated water is performed until the front end surface of the carbonated water moves backward to a predetermined standby position in the pipe (for example, set to the suction pipe 49 or the downstream water portion 50). When the front end surface of the carbonated water is retracted to the standby position, the control device 3 closes the suction valve 51. Thereby, the first water replacement step T1 ends.

When the first water suction step T2 is executed after the first water replacement step T1, the carbonated water does not exist inside the organic solvent pipe 34 after the first water suction step T2. Thereby, the fall of carbonated water from the 1st nozzle 9 after completion | finish of 1st water substitution process T1 can be suppressed or prevented.

When a predetermined time has elapsed from the start of discharging carbonated water, the control device 3 closes the first water valve 46 and stops discharging carbonated water from the second nozzle 11. Thereby, static elimination process S2 is complete | finished.

In this embodiment, since the first water suction step T2 and part of the charge removal step S2 (discharge of carbonated water from the second nozzle 9) are performed in parallel, the first water suction step T2 is performed. As compared with a case where the process is separately performed after the charge removal step S2, the entire processing time of the resist removal process can be shortened. *

Next, the control device 3 performs a sulfuric acid-containing liquid process (second processing process, step S3 in FIG. 4) for supplying high-temperature SPM to the upper surface of the substrate W. In the sulfuric acid-containing liquid process S 3, the control device 3 supplies the high-temperature SPM from the sulfuric acid-containing liquid nozzle 60 to the center of the upper surface of the substrate W in order to peel the resist from the surface of the substrate W.

Specifically, in the sulfuric acid-containing liquid step S3, the control device 3 controls the first nozzle moving unit 63 to move the sulfuric acid-containing liquid nozzle 60 from the retracted position to the central position. As a result, the sulfuric acid-containing liquid nozzle 60 is disposed above the central portion of the substrate W. Thereafter, the control device 3 opens the sulfuric acid-containing liquid valve 62. As a result, high-temperature (for example, about 170 ° C. to about 200 ° C.) SPM is supplied from the sulfuric acid-containing liquid pipe 61 to the sulfuric acid-containing liquid nozzle 60, and high-temperature SPM is discharged from the discharge port of the sulfuric acid-containing liquid nozzle 60. The high-temperature SPM discharged from the sulfuric acid-containing liquid nozzle 60 is deposited on the center of the upper surface of the substrate W, receives centrifugal force due to the rotation of the substrate W, and flows outward along the upper surface of the substrate W. As a result, as shown in FIG. 5C, the entire upper surface of the substrate W is covered with the liquid film of SPM. The resist is peeled off from the surface of the substrate W and removed from the surface of the substrate W by the high temperature SPM.

The SPM supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is received by the inner wall of the first guard 71. The SPM flowing down along the inner wall of the first guard 71 is collected in the first drainage groove 80 and then guided to the exhaust pipe 81. In the sulfuric acid-containing liquid process S3, the drainage branch valve 85 for the sulfuric acid-containing liquid branch pipe 82 is opened, and the drainage branch valve 85 for the cleaning chemical branch pipe 83 and the drain branch valve for the water branch pipe 84 are opened. By closing 85, the distribution destination of the liquid passing through the exhaust liquid pipe 81 is set to the sulfuric acid-containing liquid branch pipe 82. Therefore, in the static elimination step S2, the SPM guided to the exhaust liquid pipe 81 is guided to a treatment apparatus (not shown) for draining the sulfuric acid-containing liquid through the sulfuric acid-containing liquid branch pipe 82. Therefore, SPM droplets adhere to the inner wall of the first guard 71, the first drain groove 80, and the pipe wall of the exhaust pipe 81 after the sulfuric acid-containing liquid step S3.

In the sulfuric acid-containing liquid process S 3, a large amount of SPM mist is generated around the upper surface of the substrate W by supplying the high-temperature SPM to the substrate W. In the sulfuric acid-containing liquid process S3, the blocking plate 26 and the central shaft nozzle 29 are retracted (for example, the substrate facing surface 6 of the blocking plate 26 is spaced apart from the upper surface of the spin base 24 by a sufficient distance (for example, about 150 mm)). However, since the SPM used in the sulfuric acid-containing liquid process S3 is extremely high temperature (for example, about 170 ° C. to about 200 ° C.), a large amount of SPM mist is generated in the sulfuric acid-containing liquid process S3. The SPM mist enters the organic solvent pipe 34 from the first discharge port 8 and enters the organic solvent pipe 34 (deeply).

In this case, when the IPA used in the previous resist removal process remains in the organic solvent pipe 34 (including adhesion of IPA droplets to the inside of the organic solvent pipe 34), the sulfuric acid-containing liquid process S3. In this case, the SPM mist that has entered the organic solvent pipe 34 may come into contact with the IPA inside the organic solvent pipe 34. When the mist of SPM comes into contact with IPA inside the organic solvent pipe 34, particles are generated, and the inside of the organic solvent pipe 34 may become a particle generation source.

However, in this embodiment, since the first water replacement step T1 is performed prior to the sulfuric acid-containing liquid step S3, IPA remains in the organic solvent pipe 34 at the start of the sulfuric acid-containing liquid step S3. Absent. Accordingly, even if SPM mist enters the organic solvent pipe 34 in the sulfuric acid-containing liquid process S3, it does not come into contact with the IPA inside the organic solvent pipe 34. Therefore, the contact between the IPA and the SPM can be prevented in the sulfuric acid-containing liquid process S3, whereby the inside of the organic solvent pipe 34 can be suppressed or prevented from becoming a particle generation source.

In the sulfuric acid-containing liquid process S3, the sulfuric acid-containing liquid process S3 ends when a predetermined period has elapsed from the start of high-temperature SPM discharge. Specifically, the control device 3 closes the sulfuric acid-containing liquid valve 62 to stop the discharge of high-temperature SPM from the sulfuric acid-containing liquid nozzle 60, and then controls the first nozzle moving unit 63 to control the sulfuric acid. The containing liquid nozzle 60 is retracted to the retracted position.

Next, a first rinsing process (step S4 in FIG. 4) for supplying carbonated water as a rinsing liquid to the upper surface of the substrate W is performed. Specifically, the control device 3 opens the second water valve 57. Accordingly, as shown in FIG. 5D, carbonated water is discharged from the second discharge port 10 of the second nozzle 11 toward the center of the upper surface of the substrate W. The carbonated water discharged from the second nozzle 11 is deposited on the center of the upper surface of the substrate W and flows on the upper surface of the substrate W toward the peripheral portion of the substrate W under the centrifugal force generated by the rotation of the substrate W.

In this embodiment, the first rinsing step S4 not only discharges carbonated water from the second nozzle 11, but also discharges carbonated water from the first discharge port 8 of the first nozzle 9. It is realized by doing. That is, the first rinsing step S4 includes a second water replacement step T3 in which the inside of the organic solvent pipe 34 is replaced with carbonated water in parallel with the discharge of carbonated water from the second nozzle 11. Specifically, the control device 3 opens the second organic solvent valve 36 and closes the first organic solvent valve 35 and the suction valve 51 in synchronization with the start of the first rinsing step S4. Open the water valve 46. Thereby, carbonated water from the first water pipe 39 is supplied to the organic solvent downstream portion 40, and SPM droplets adhering to the inner wall of the organic solvent downstream portion 40 are replaced with carbonated water. The carbonated water supplied to the downstream portion 40 of the organic solvent is discharged from the first nozzle 9 and lands on the center of the upper surface of the substrate W, receives the centrifugal force due to the rotation of the substrate W, and moves on the upper surface of the substrate W. It flows toward the peripheral edge of the substrate W.

The carbonated water supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is received by the inner wall of the first guard 71. The carbonated water flowing down along the inner wall of the first guard 71 is collected in the first drain groove 80 and then guided to the exhaust pipe 81. In the first rinsing step S4, the drainage branch valve 85 for the water branch pipe 84 is opened, and the drainage branch valve 85 for the sulfuric acid-containing liquid branch pipe 82 and the drainage branch for the cleaning chemical liquid branch pipe 83 are opened. By closing the valve 85, the flow destination of the liquid passing through the exhaust liquid pipe 81 is set to the water branch pipe 84. Therefore, the carbonated water led to the exhaust liquid pipe 81 is led to a treatment device (not shown) for draining water through the water branch pipe 84. When the SPM droplet used in the sulfuric acid-containing liquid process S3 is attached to the inner wall of the first guard 71, the first drain groove 80, or the tube wall of the exhaust pipe 81, the SPM droplet. Is washed away with carbonated water.

The carbonated water supplied to the upper surface of the substrate W causes the SPM on the substrate W to flow outward and is discharged around the substrate W, and the liquid film of SPM on the substrate W covers the entire upper surface of the substrate W. Replaced by a liquid film of water. That is, the SPM is washed away from the upper surface of the substrate W by carbonated water as a rinse liquid. Then, when a predetermined time has elapsed from the start of discharge of carbonated water, the control device 3 closes the first water valve 46 and the second water valve 57, respectively, and outputs from the first nozzle 9 and the second nozzle 11. Stop discharging carbonated water. Thereby, the 1st rinse process is completed.

Further, in this embodiment, since the first rinsing step S4 includes the second water replacement step T3, the first water replacement step T1 is compared with the case where it is performed at a different timing from the first rinsing step S4. Thus, the processing time of the entire resist removal process can be shortened.

Further, in the first rinsing step S 4, it is not necessary to synchronize the stop of discharge of carbonated water from the first nozzle 9 and the stop of discharge of carbonated water from the second nozzle 11. The discharge of carbonated water may be stopped prior to the stop of discharge of carbonated water from the second nozzle 11.

After stopping the discharge of carbonated water from the first nozzle 9 and the second nozzle 11, the control device 3 performs a cleaning chemical solution process (first processing process; step S5 in FIG. 4) for supplying SC1 to the upper surface of the substrate W. I do. In the cleaning chemical solution step S5, the controller 3 removes the SC1 from the cleaning chemical solution nozzle 65 on the upper surface of the substrate W in order to remove the resist residue existing on the surface of the substrate W after the sulfuric acid-containing solution step S3. Supply.

Specifically, in the cleaning chemical solution step S5, the control device 3 controls the second nozzle moving unit 68 to move the cleaning chemical solution nozzle 65 from the retracted position to the processing position. Thereafter, the control device 3 opens the cleaning chemical liquid valve 67. As a result, as shown in FIG. 5E, SC1 is supplied from the cleaning chemical solution pipe 66 to the cleaning chemical solution nozzle 65, and SC1 is discharged from the discharge port of the cleaning chemical solution nozzle 65. Further, the control device 3 controls the second nozzle moving unit 68 to reciprocate the cleaning chemical solution nozzle 65 between the central position and the peripheral position in parallel with the discharge of SC1 from the cleaning chemical solution nozzle 65. (Half scan). Thereby, the SC1 liquid landing position from the cleaning chemical liquid nozzle 65 can be reciprocated between the center of the upper surface of the substrate W and the peripheral edge of the upper surface of the substrate W. The entire upper surface of the substrate W can be scanned. By supplying SC1 to the upper surface of the substrate W, the resist residue can be removed from the surface of the substrate W.

The SC 1 supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is received by the inner wall of the first guard 71. The SC1 flowing down along the inner wall of the first guard 71 is collected in the first drainage groove 80 and then guided to the exhaust pipe 81. In the cleaning chemical liquid step S5, the drainage branch valve 85 for the cleaning chemical liquid branch pipe 83 is opened, and the drainage branch valve 85 for the sulfuric acid-containing liquid branch pipe 82 and the drainage branch valve 85 for the water branch pipe 84 are used. Is closed, the flow destination of the liquid passing through the exhaust liquid pipe 81 is set to the cleaning chemical liquid branch pipe 83. Therefore, SC1 led to the exhaust liquid pipe 81 is led to a processing apparatus (not shown) for draining the cleaning chemical liquid through the cleaning chemical liquid branch pipe 83.

In parallel with the cleaning chemical liquid process S5, a second water suction process T4 (first suction process) for sucking carbonated water in the organic solvent pipe 34 is performed. In the second water suction step T4, carbonated water present in the organic solvent pipe 34 after the organic solvent step S7 is sucked by the suction unit 55.

Specifically, after the completion of the second water replacement step T3, the control device 3 opens the second organic solvent valve 36 and closes the first organic solvent valve 35 and the first water valve 46 while performing suction. Open the valve 51. Thereby, the insides of the organic solvent downstream portion 40 and the water downstream portion 50 are exhausted, and as shown in FIG. 5E, the carbonated water present in the organic solvent downstream portion 40 and the water downstream portion 50 is sucked. It is drawn into the pipe 49 (suction). The suction of carbonated water is performed until the front end surface of the carbonated water moves backward to a predetermined standby position in the pipe (for example, set to the suction pipe 49 or the downstream water portion 50). When the front end surface of the carbonated water is retracted to the standby position, the control device 3 closes the suction valve 51. Thereby, the second water suction step T4 ends.

When the second water suction step T4 is executed after the second water replacement step T3 is completed, carbonated water does not exist inside the organic solvent pipe 34 after the second water suction step T4 is executed. Thereby, the fall of carbonated water from the 1st nozzle 9 after completion | finish of 2nd water substitution process T3 can be suppressed or prevented.

In this embodiment, the second water suction step T4 is executed in parallel with the cleaning chemical solution step S5. Therefore, the second water suction step T4 is compared with the case where the second water suction step T4 is performed at a different timing from the cleaning chemical solution step S5. Thus, the processing time of the entire resist removal process can be shortened.

When the predetermined period has elapsed from the start of the SC1 discharge, the cleaning chemical solution step S5 is completed. Specifically, the control device 3 closes the cleaning chemical solution valve 67 to stop the discharge of SC1 from the cleaning chemical solution nozzle 65, and then controls the second nozzle moving unit 68 to control the cleaning chemical solution nozzle 65. Retreat to the retreat position.

Next, a second rinsing process (step S6 in FIG. 4) for supplying carbonated water as a rinsing liquid to the upper surface of the substrate W is performed. Specifically, the control device 3 opens the second water valve 57. Accordingly, as shown in FIG. 5F, carbonated water is discharged from the second discharge port 10 of the second nozzle 11 toward the center of the upper surface of the substrate W. The carbonated water discharged from the second nozzle 11 is deposited on the center of the upper surface of the substrate W and flows on the upper surface of the substrate W toward the peripheral portion of the substrate W under the centrifugal force generated by the rotation of the substrate W.

The carbonated water supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is received by the inner wall of the first guard 71. The carbonated water flowing down along the inner wall of the first guard 71 is collected in the first drain groove 80 and then guided to the exhaust pipe 81. In the second rinsing step S6, the drainage branch valve 85 for the water branch pipe 84 is opened, and the drainage branch valve 85 for the sulfuric acid-containing liquid branch pipe 82 and the drainage branch for the cleaning chemical liquid branch pipe 83 are opened. By closing the valve 85, the flow destination of the liquid passing through the exhaust liquid pipe 81 is set to the water branch pipe 84. Therefore, in the second rinsing step S 6, the carbonated water led to the exhaust liquid pipe 81 is led to a treatment device (not shown) for draining water through the water branch pipe 84.

The carbonated water supplied to the upper surface of the substrate W causes the SC1 on the substrate W to flow outward and is discharged around the substrate W, and the liquid film of SC1 on the substrate W covers the entire upper surface of the substrate W. Replaced by a liquid film of water. That is, SC1 is washed away from the upper surface of the substrate W by carbonated water as a rinse liquid. When a predetermined time elapses after the second water valve 57 is opened, the control device 3 closes the second water valve 57 and stops the discharge of carbonated water from the second nozzle 11. Thereby, 2nd rinse process S6 is complete | finished.

Next, an organic solvent process (step S7 in FIG. 4) for supplying IPA as an organic solvent to the upper surface of the substrate W is performed. Specifically, the control device 3 controls the shield plate lifting / lowering unit 32 to place the shield plate 26 in the proximity position. When the blocking plate 26 is in the proximity position, the blocking plate 26 blocks the upper surface of the substrate W from the surrounding space.

Further, the control device 3 controls the guard lifting / lowering unit 73 so that the first guard 71 remains at the lower position, the second guard 72 is disposed at the upper position, and the second guard 72 is placed around the substrate W. Opposite to the end face. Further, the control device 3 decelerates the rotation of the substrate W to a predetermined paddle speed. This paddle speed means that when the substrate W is rotated at the paddle speed, the centrifugal force acting on the liquid on the upper surface of the substrate W is smaller than the surface tension acting between the rinse liquid and the upper surface of the substrate W, Alternatively, the speed is such that the centrifugal force and the surface tension almost antagonize.

Then, the control device 3 opens the first organic solvent valve 35 while opening the second organic solvent valve 36 and closing the first water valve 46 and the suction valve 51. As a result, as shown in FIG. 5G, IPA from the organic solvent supply source is supplied to the second nozzle 11, and IPA is discharged from the second nozzle 11 to land on the upper surface of the substrate W.

In the sulfuric acid-containing liquid process S3, the SPM mist that has entered the organic solvent pipe 34 is liquefied by condensation to form SPM droplets. If SPM droplets exist in the organic solvent pipe 34 before the start of the organic solvent process S7, the IPA supplied to the organic solvent pipe 34 in the organic solvent process S7 is converted into the SPM inside the organic solvent pipe 34. There is a risk of contact. When IPA comes into contact with SPM droplets inside the organic solvent pipe 34, particles are generated, and the inside of the organic solvent pipe 34 may become a particle generation source.

However, in this embodiment, since the second water replacement step T3 is performed prior to the organic solvent step S7, SPM droplets remain in the organic solvent pipe 34 at the start of the organic solvent step S7. Not. Therefore, even if IPA is supplied to the organic solvent pipe 34 in the organic solvent process S7, the organic solvent pipe 34 does not come into contact with the SPM. Therefore, it is possible to effectively suppress or prevent the generation of particles due to the contact between the IPA and the SPM, thereby suppressing or preventing the inside of the organic solvent pipe 34 from becoming a particle generation source.

In the organic solvent step S7, the carbonated water contained in the liquid film on the upper surface of the substrate W is sequentially replaced with IPA by the discharge of IPA from the first nozzle 9. As a result, the IPA liquid film covering the entire upper surface of the substrate W is held on the upper surface of the substrate W in a paddle shape. Even after the liquid film on the entire upper surface of the substrate W is replaced with the IPA liquid film, the supply of IPA to the upper surface of the substrate W is continued. Therefore, IPA is discharged from the peripheral edge of the substrate W.

IPA discharged from the peripheral edge of the substrate W is received by the inner wall of the second guard 72. The IPA flowing down along the inner wall of the second guard 72 is collected in the second drainage groove 86 and then guided to the exhaust pipe 87. Therefore, after the organic solvent step S 7, IPA droplets adhere to the inner wall of the second guard 72, the second drainage groove 86, and the pipe wall of the exhaust pipe 87.

When a predetermined period has elapsed from the start of IPA discharge, the control device 3 closes the first organic solvent valve 35 and stops the discharge of IPA from the first nozzle 9. Thereby, organic solvent process S7 is complete | finished.

Next, a spin dry process (step S8 in FIG. 4) for drying the substrate W is performed. Specifically, the control device 3 controls the shield plate lifting / lowering unit 32 to place the shield plate 26 in the proximity position. Further, in this state, the control device 3 controls the spin motor 22, and as shown in FIG. 5H, a drying rotation speed larger than the rotation speed in each process from the sulfuric acid-containing liquid process S 3 to the organic solvent process S 7 ( For example, the substrate W is accelerated to several thousand rpm), and the substrate W is rotated at the drying rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried. Further, the control device 3 controls the blocking plate rotating unit 31 to rotate the blocking plate 26 in the rotation direction of the substrate W at a high speed.

In parallel with the spin dry step S8, an organic solvent suction step T5 (second suction step) for sucking the organic solvent in the organic solvent pipe 34 is executed. In the organic solvent suction step T5, the organic solvent present in the organic solvent pipe 34 after the organic solvent step S7 is sucked by the suction unit 55.

Specifically, the control device 3 opens the suction valve 51 while opening the second organic solvent valve 36 and closing the first organic solvent valve 35 and the first water valve 46 after completion of the organic solvent step S7. open. Thereby, the insides of the organic solvent downstream portion 40 and the water downstream portion 50 are exhausted, and as shown in FIG. 5H, the IPA present in the organic solvent downstream portion 40 and the water downstream portion 50 is sucked into the suction pipe. It is drawn to 49 (suction). The suction of the IPA is performed until the tip surface of the IPA moves backward to a predetermined standby position in the pipe (for example, set in the suction pipe 49 or the water downstream side portion 50). When the tip surface of the IPA is retracted to the standby position, the control device 3 closes the suction valve 51.

When a predetermined time has elapsed since the acceleration of the substrate W, the control device 3 controls the spin motor 22 to stop the rotation of the substrate W by the spin chuck 5 and controls the blocking plate rotating unit 31 to rotate the blocking plate 26. Stop.

Thereafter, the substrate W is unloaded from the processing chamber 4 (step S9 in FIG. 4). Specifically, the control device 3 places the blocking plate 26 in the retracted position, lowers the second guard 72 to the lower position, and moves the first and

second guards

71 and 72 to the holding position of the substrate W. Arrange below. Thereafter, the control device 3 causes the hand H of the substrate transport robot CR to enter the processing chamber 4. Then, the control device 3 causes the hand of the substrate transport robot CR to hold the substrate W on the spin chuck 5 and retracts the hand H of the substrate transport robot CR from the processing chamber 4. Thereby, the substrate W from which the resist is removed from the surface is carried out of the processing chamber 4.

Further, as shown by a two-dot chain line in FIG. 4, prior to the start of the organic solvent suction step T5, an organic solvent pre-dispense (step S10 in FIG. 4) for replacing the organic solvent pipe 34 with a new IPA is performed. There is. Prior to the start of the organic solvent suction step T5, the IPA tip surface of the organic solvent pipe 34 is located in the organic solvent upstream portion 41. At this time, the IPA in the organic solvent pipe 34 (in the organic solvent upstream portion 41) may change over time (temperature change or component change).

When performing the organic solvent pre-dispensing, the control device 3 opens the first organic solvent valve 35 and the suction valve 51 while closing the second organic solvent valve 36 and the first water valve 46, and from the organic solvent supply source. Is drawn into the suction pipe 49 through the organic solvent upstream portion 41 and the water downstream portion 50 (suction). As a result, the IPA that has changed with time and is present in the upstream portion 41 of the organic solvent is replaced with fresh IPA. When a predetermined period has elapsed since the opening of the first organic solvent valve 35, the control device 3 closes the first organic solvent valve 35 and the suction valve 51.

FIG. 6 is an illustrative view for explaining a monitoring state by the first liquid detection sensor 43 and the second liquid detection sensor 45 in the main process of the first substrate processing example.

As shown in FIG. 6, in the organic solvent step S7 (during organic solvent discharge), the control device 3 detects the detection output of the first liquid detection sensor 43 disposed on the upstream side of the second organic solvent valve 36, Neither is it referring to the detection output of the second liquid detection sensor 45 disposed downstream of the second organic solvent valve 36. In other words, in the organic solvent step S 7, the control device 3 ignores the presence or absence of liquid at both the first detection position 42 and the second detection position 44.

As shown in FIG. 6, in the organic solvent suction step T5, the control device 3 detects the detection output of the first liquid detection sensor 43 disposed on the upstream side of the second organic solvent valve 36, and the second organic solvent. Both detection outputs of the second liquid detection sensor 45 arranged downstream of the solvent valve 36 are referred to. In other words, the control device 3 monitors the presence or absence of liquid at both the first detection position 42 and the second detection position 44. In the organic solvent suction step T5, based on the detection outputs from both the first liquid detection sensor 43 and the second liquid detection sensor 45, the liquid (that is, both the first detection position 42 and the second detection position 44). When it is detected that IPA) does not exist, the control device 3 detects that the suction of IPA is completed.

In addition, in the first substrate processing example, the control device 3 performs not only the organic solvent suction step T5 but also other suction steps (for example, the first water suction step T2 and the second water suction step T4). The presence or absence of liquid is monitored at both the detection position 42 and the second detection position 44.

In addition, in the organic solvent pre-dispensing step S10, the control device 3 refers only to the detection output of the second liquid detection sensor 45 disposed upstream of the second organic solvent valve 36, and the second organic solvent. The detection output of the first liquid detection sensor 43 disposed on the downstream side of the valve 36 is not referred to. In other words, the control device 3 monitors the presence / absence of the liquid at the second detection position 44, but ignores the presence / absence of the liquid at the first detection position 42. Even though the second organic solvent valve 36 is controlled to be in the closed state, the presence of the liquid (that is, IPA) at the second detection position 44 is detected by the second liquid detection sensor 45. As shown in FIG. 6, the control device 3 can detect an outflow error on the assumption that the organic solvent (that is, IPA) is leaking from the second organic solvent valve 36.

Further, in the first substrate processing example, the control device 3 only outputs the detection output of the second liquid detection sensor 45 arranged on the downstream side of the second organic solvent valve 36, except for the respective processes specifically mentioned. Reference is not made to the detection output of the first liquid detection sensor 43 arranged on the upstream side of the second organic solvent valve 36. In other words, the control device 3 monitors the presence / absence of the liquid at the second detection position 44, but ignores the presence / absence of the liquid at the first detection position 42. Even though the second organic solvent valve 36 is controlled to be in the closed state, the presence of the liquid (that is, IPA) at the second detection position 44 is detected by the second liquid detection sensor 45. As shown in FIG. 6, the control device 3 can detect an outflow error on the assumption that the organic solvent (that is, IPA) is leaking from the second organic solvent valve 36.

FIG. 7 is a diagram for explaining hard interlock in the first substrate processing example.

This interlock process is executed at the start of each process in a process in which a series of substrate processes are performed in accordance with a recipe stored in the memory of the control device 3.

At the start of the sulfuric acid-containing liquid process S3, (3) whether the detection output of the guard lower position sensor 94 is on, that is, the first guard 71 is disposed at the lower position, or (5) the first and second Whether the detection outputs of the

liquid detection sensors

43 and 45 are off, that is, whether the tip surface of the IPA is retracted to the suction pipe 49 or the downstream water portion 50, and (6) the detection output of the valve closing sensor 37 is on. That is, whether the first organic solvent valve 35 is in the closed state. When all of the conditions (3), (5), and (6) are satisfied, the control device 3 allows the sulfuric acid-containing liquid valve 62 to open. That is, if any one of the conditions (3), (5), and (6) is not satisfied, the control device 3 prohibits the opening operation of the sulfuric acid-containing liquid valve 62. Such a hard interlock can reliably prevent the contact between the IPA and the SPM in the processing chamber 4 when the discharge of the IPA from the first nozzle 9 is started.

At the start of the organic solvent process S7, (1) whether the detection output of the blocking plate proximity position sensor 33 is on, that is, whether the blocking plate 26 is located in the proximity position, or (2) detection of the nozzle retraction sensor 64. Whether the output is on, that is, whether the sulfuric acid-containing liquid nozzle 60 is in the retracted position, or (4) whether the detection output of the guard upper position sensor 93 is on, that is, the first guard 71 is disposed at the upper position. And (8) whether the detection output of the first valve opening sensor 21 is on, that is, whether the exhaust valve 101 that opens and closes the exhaust pipe 100 is open. When all of the conditions (1), (2), (4), and (8) are satisfied, the control device 3 allows the opening operation of the first organic solvent valve 35. That is, when any one of the conditions (1), (2), (4), and (8) is not satisfied, the control device 3 prohibits the opening operation of the first organic solvent valve 35. . By such a hard interlock, it is possible to reliably prevent the contact between the SPM and the IPA in the processing chamber 4 when the discharge of the SPM from the sulfuric acid-containing liquid nozzle 60 is started.

Further, at the start of the static elimination process S2, at the start of the sulfuric acid-containing liquid process S3, at the start of the first rinse process S4, at the start of the cleaning chemical liquid process S5, or at the start of the second rinse process S6, (7) Whether the detection outputs of the second valve closing sensor 95 corresponding to processing other than the processing liquid to be discharged are all on, that is, the drainage branch valve 85 corresponding to processing other than the processing liquid to be discharged is closed. It is investigated whether it is.

Specifically, in the static elimination step S2, the first rinsing step S4 and the second rinsing step S6, the second valve closing sensor 95 corresponding to the drainage branch valve 85 for the sulfuric acid-containing liquid branch pipe 82, and The detection output of the second valve closing sensor 95 corresponding to the drainage branch valve 85 for the cleaning chemical branch pipe 83 is examined. In the sulfuric acid-containing liquid process S3, the second valve closing sensor 95 corresponding to the drainage branch valve 85 for the cleaning chemical solution branch pipe 83 and the second drainage branch valve 85 corresponding to the water branch pipe 84 are used. Each detection output of the valve closing sensor 95 is examined. In the cleaning chemical solution step S5, the second valve closing sensor 95 corresponding to the drainage branch valve 85 for the sulfuric acid-containing liquid branch pipe 82 and the second drainage branch valve 85 corresponding to the water branch pipe 84 are used. Each detection output of the valve closing sensor 95 is examined.

When this condition (7) is satisfied, the control device 3 sets the discharge open / close valve (ie, the first water valve 46, sulfuric acid) corresponding to the treatment liquid to be discharged at the start of each step S2 to S6. Any one of the contained liquid valve 62 and the cleaning chemical liquid valve 67) is opened. That is, when the condition (7) is not satisfied, the control device 3 prohibits the opening operation of the

valves

46, 62, and 67.

As described above, according to this embodiment, the first water replacement step T1 is performed prior to the sulfuric acid-containing liquid step S3. If the IPA used in the previous resist removal process remains in the organic solvent pipe 34 before the start of the sulfuric acid-containing liquid process S3, the SPM that has entered the organic solvent pipe 34 in the sulfuric acid-containing liquid process S3. Mist may come into contact with the IPA inside the organic solvent pipe 34. However, by replacing the inside of the organic solvent pipe 34 with carbonated water prior to the sulfuric acid-containing liquid process S3, IPA does not remain inside the organic solvent pipe 34 at the start of the sulfuric acid-containing liquid process S3. Accordingly, even if SPM mist enters the organic solvent pipe 34 in the sulfuric acid-containing liquid process S3, it does not come into contact with the IPA inside the organic solvent pipe 34. Therefore, the contact between the IPA and the SPM can be prevented in the sulfuric acid-containing liquid process S3, whereby the inside of the organic solvent pipe 34 can be suppressed or prevented from becoming a particle generation source.

Also, after the sulfuric acid-containing liquid step S3, the second water replacement step T3 is performed prior to the organic solvent step S7. If the SPM droplets that have entered the organic solvent pipe 34 in the sulfuric acid-containing liquid process S3 and are liquefied by condensation are present inside the organic solvent pipe 34 before the start of the organic solvent process S7, the organic solvent process S7. The IPA supplied to the organic solvent pipe 34 may come into contact with the SPM inside the organic solvent pipe 34. However, by replacing the inside of the organic solvent pipe 34 with carbonated water prior to the organic solvent process S7, no SPM droplets remain in the organic solvent pipe 34 at the start of the organic solvent process S7. Therefore, even if IPA is supplied to the organic solvent pipe 34 in the organic solvent process S7, the organic solvent pipe 34 does not come into contact with the SPM. Therefore, it is possible to effectively suppress or prevent the generation of particles due to the contact between the IPA and the SPM, thereby suppressing or preventing the inside of the organic solvent pipe 34 from becoming a particle generation source.

FIG. 8 is an illustrative view for explaining a second substrate processing example by the processing unit 2. FIG. 9 is an illustrative view for explaining a third substrate processing example by the processing unit 2. The second and third substrate processing examples are different from the first substrate processing example shown in FIG. 4 and the like in that IPA is supplied to the first nozzle 9 prior to the end of the second rinsing step S6. ing. In other respects, the second and third substrate processing examples are not different from the first substrate processing example.

In the second substrate processing example shown in FIG. 8, the control device 3 opens the second organic solvent valve 36 while the second rinsing step S6 is being performed (in parallel with the second rinsing step S6). The first organic solvent valve 35 is opened. Thereby, IPA from the organic solvent supply source is supplied toward the first nozzle 9. However, the control device 3 closes the second water valve 57 at a timing immediately before the IPA is discharged from the first discharge port 8. Thereby, IPA is not discharged from the first discharge port 8. That is, during the execution of the second rinsing step S6, IPA is not discharged from the first discharge port 8, and the inside of the organic solvent downstream portion 40 and the inside of the nozzle pipe of the first nozzle 9 are made of IPA. Filled.

Thereafter, when the second rinsing step S6 is finished and the timing for starting the organic solvent step S7 is reached, the control device 3 opens the first organic solvent valve 35, whereby the first nozzle from the organic solvent supply source is opened. The supply of IPA to 9 is restarted, and IPA is discharged from the first discharge port 8.

According to this second substrate processing example, IPA can be discharged from the first discharge port 8 immediately after the end of the second rinsing step S6. That is, the organic solvent step S7 can be started immediately after the end of the second rinsing step S6. Thereby, the processing time of the entire resist removing process can be shortened as compared with the first substrate processing example.

In the third substrate processing example shown in FIG. 9, unlike the second substrate processing example shown in FIG. 8, the control device 3 performs the second rinsing step S6 (in parallel with the second rinsing step S6). IPA is discharged from the first discharge port 8.

Specifically, the control device 3 opens the first organic solvent valve 35 while opening the second organic solvent valve 36 during the execution of the second rinsing step S6. Thereby, IPA from the organic solvent supply source is supplied toward the first nozzle 9 and discharged from the first discharge port 8. That is, the control device 3 starts the organic solvent step S7 before the end of the second rinsing step S6.

In the third substrate processing example, the discharge flow rate of IPA from the first discharge port 8 is smaller than the discharge flow rate of carbonated water from the second discharge port 10 (for example, about 1/10). . Therefore, there is almost no adverse effect on the rinsing process on the substrate W. In the third substrate processing example, as in the second substrate processing example, there is no interval from the end of the second rinsing step S6 to the start of the organic solvent step S7. Thus, the processing time of the entire resist removal process can be shortened.

Although one embodiment of the present invention has been described above, the present invention can also be implemented in other forms.

For example, in the first and second water suction steps T2 and T4 of the first to third substrate processing examples, the carbonated water is sucked until the front end surface of the carbonated water is retracted to the suction pipe 49 or the water downstream side portion 50. As described above, the front end surface of the carbonated water after suction may be located inside the organic solvent pipe 34.

In the first to third substrate processing examples, the first water replacement step T1 may be performed at a different timing from the static elimination step S2. Further, the second water replacement step T3 may be performed at a timing different from that of the first rinse step S4. You may perform 1st water suction process T2 after completion | finish of static elimination process S2. The second water suction step T4 may be performed at a different timing from the cleaning chemical solution step S5.

In the first to third substrate processing examples, as the water replacement step, after the first water replacement step T1 performed prior to the sulfuric acid-containing liquid step S3 and the sulfuric acid-containing liquid step S3, the organic solvent step S7 is performed. The second water replacement step T3, which is performed prior to the second water replacement step, is performed. However, the water replacement step may be performed at least once before and / or after execution of the organic solvent step S7 and / or before and / or after execution of the sulfuric acid-containing liquid step S3. .

In the first to third substrate processing examples, hydrogen peroxide solution (H ₂ O ₂ ) is applied to the upper surface (surface) of the substrate W prior to the execution of the cleaning chemical solution step S5 or after the execution of the cleaning chemical solution step S5. You may perform the hydrogen peroxide solution supply process supplied to.

In the above-described embodiment, SPM is exemplified as the sulfuric acid-containing liquid used as an example of the first chemical fluid, but sulfuric acid or SOM (sulfuric acid ozone) can also be used as the sulfuric acid-containing liquid.

In the above-described embodiment, the gas and liquid of the atmosphere and the processing liquid are used as the processing cup by using an external gas-liquid separator (gas-liquid separator 97) without performing gas-liquid separation between the atmosphere and the processing liquid inside. The case where the processing cup 16 of the type which performs separation has been described. However, as a processing cup, a type of processing cup capable of performing gas-liquid separation between the atmosphere and the processing liquid inside may be used.

This type of processing cup includes one or a plurality of cups arranged so as to surround the spin chuck 5 and drainage pipes connected to each cup. Further, in the processing chamber 4 having this type of processing cup, an exhaust port is opened at the bottom of the side wall of the partition wall 18 or at the bottom of the partition wall 18, and the inside of the exhaust port is formed by an exhaust duct connected to the exhaust port. By being sucked, the atmosphere in the lower space of the processing chamber 4 is exhausted.

In the above-described embodiment, a common drainage groove (drainage groove 80) for draining a plurality of types of treatment liquids (sulfuric acid-containing liquid, cleaning chemical liquid, and water) is provided. The distribution destination of the drainage (treatment liquid) is switched between the plurality of drainage branch pipes 82 to 84 in accordance with the type of the drainage (treatment liquid).

However, in the processing cup 16, a drain groove may be provided for each type of processing liquid in a one-to-one correspondence. That is, a drainage groove for sulfuric acid-containing liquid, a drainage groove for cleaning chemicals, and a drainage groove for water may be provided individually. In this case, it is not necessary to switch the flow destination of the drainage (treatment liquid) between the plurality of drainage branch pipes.

In the above-described embodiment, IPA is exemplified as an example of the organic solvent used as an example of the second chemical fluid, but methanol, ethanol, HFE (hydrofluoroether), acetone, and the like are exemplified as the organic solvent. it can. Further, the organic solvent may be a liquid mixed with other components as well as a case where it is composed of only a single component. For example, a mixed solution of IPA and acetone or a mixed solution of IPA and methanol may be used.

In the above-described embodiment, the combination of a sulfuric acid-containing liquid such as SPM and an organic solvent such as IPA has been exemplified as a combination of chemical liquids that are dangerous to contact, but other combinations such as aqua regia and sulfuric acid can be contacted. It can be illustrated as a combination that involves danger.

The present invention is also widely applicable to combinations that produce a product (for example, a salt) by contact, such as combinations of acids and alkalis described above, that is, combinations of drug fluids that are not suitable for contact. The

In the above description, the first drug fluid (fluid containing the drug component) has been described as a liquid (ie, liquid containing the drug component). However, as the first drug fluid (ie, gas containing the drug component) ) May be adopted.

In addition, although the second drug fluid has been described as being a liquid, a gas may be employed as the second drug fluid.

Moreover, although carbonated water was illustrated as water which substitutes the inside of chemical | medical fluid piping (organic solvent piping 34), this water is not restricted to carbonated water, Deionized water (DIW), electrolytic ion water, hydrogen water, ozone It may be either water or hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm).

Although the embodiments of the present invention have been described in detail, these are merely specific examples used to clarify the technical contents of the present invention, and the present invention is construed to be limited to these specific examples. Rather, the scope of the present invention is limited only by the accompanying claims.

This application corresponds to Japanese Patent Application No. 2016-104600 filed with the Japan Patent Office on May 25, 2016, and the entire disclosure of this application is incorporated herein by reference.

1: substrate processing apparatus 4: processing chamber 5: spin chuck (substrate holding unit)
6: substrate facing surface 7: facing member 8: first discharge port 9: first nozzle 11: second nozzle 12: organic solvent supply unit (first chemical fluid supply unit)
13: Rinsing water supply unit (second water supply unit)
14: Sulfuric acid-containing liquid supply unit (second chemical fluid supply unit)
15: Cleaning chemical supply unit 16: Processing cup 34: Organic solvent piping (chemical fluid piping)
35: first organic solvent valve 36: second organic solvent valve 37: valve closing sensor 39: first water piping 40: organic solvent downstream portion 43: first liquid detection sensor 45: second liquid detection Sensor 46: First water valve 47: Replacement water supply unit (first water supply unit)
49: Suction piping 51: Suction valve 52: Suction device 53: Vacuum generator 54: Drive valve 55: Suction unit 56: Second water piping 57: Second water valve A1: Rotating axis A2: Rotating axis W: Substrate

Claims

A processing chamber;
A substrate holding unit disposed in the processing chamber and holding a substrate;
A first nozzle having a discharge port for discharging a fluid toward the main surface of the substrate held by the substrate holding unit;
A first fluid channel connected to the first nozzle and having a drug fluid pipe connected to the discharge port, the first drug fluid being supplied to the first nozzle via the drug fluid pipe; A chemical fluid supply unit;
A first water supply unit having a water pipe branched and connected to the drug fluid pipe, and supplying water to the drug fluid pipe via the water pipe;
A second drug fluid supply unit for supplying a second drug fluid, which is a fluid different from the first drug fluid, to the main surface of the substrate held by the substrate holding unit;
A controller for controlling the first drug fluid supply unit, the second drug fluid supply unit, and the first water supply unit;
The control device includes:
The first drug fluid was discharged from the first nozzle toward the main surface of the substrate by supplying the first drug fluid to the drug fluid pipe, and the first drug fluid was used. A first processing step for performing processing on the substrate;
Supplying a second chemical fluid to the main surface of the substrate, and performing a treatment using the second chemical fluid on the substrate;
Before and / or after execution of the first treatment step and / or before and / or after execution of the second treatment step, water from the first water supply unit is supplied to the chemical fluid piping. And a water replacement step of replacing the inside of the chemical fluid piping with water.
A counter member having a substrate facing surface facing the main surface of the substrate held by the substrate holding unit;
The substrate processing apparatus according to claim 1, wherein the discharge port of the first nozzle is provided on the substrate facing surface.
A suction unit for sucking the inside of the drug fluid piping;
The control device further controls the suction unit;
The substrate processing apparatus according to claim 1, wherein the control device further executes a first suction step of sucking the inside of the chemical fluid piping after the water replacement step.
The control device starts the first processing step after the end of the second processing step,
The substrate processing apparatus according to claim 1, wherein the control device executes a first water replacement step that is executed prior to the second processing step as the water replacement step.
The control device starts the first processing step after the end of the second processing step,
3. The control device according to claim 1, wherein the control device executes, as the water replacement step, a second water replacement step executed after the second processing step and prior to the first processing step. 4. Substrate processing equipment.
Prior to the first processing step, the control device supplies water to the main surface of the substrate to wash away the second chemical fluid from the main surface of the substrate with water after the second processing step. Further executing a first water supply step of supplying,
The substrate processing apparatus according to claim 5, wherein the control device executes the second water replacement step as the first water supply step.
A second nozzle for discharging a fluid toward the main surface of the substrate held by the substrate holding unit, the nozzle being different from the first nozzle;
A second water supply unit for supplying water to the second nozzle,
The control device further controls the second water supply unit,
The control device starts the first processing step after the end of the second processing step, and after the second processing step and before the start of the first processing step, the first processing step. Performing a second water supply step of starting discharge of water from the second nozzle toward the main surface of the substrate by supplying water to the nozzles of the two;
The said control apparatus starts supply of the said 1st chemical fluid to the said chemical fluid piping in the said 1st process process prior to completion | finish of the said 2nd water supply process. Substrate processing equipment.
3. The substrate processing apparatus according to claim 1, wherein the control device starts the first processing step before the end of the second water supply step.
The said control apparatus further performs the 2nd suction process which attracts | sucks the inside of the said chemical fluid piping after completion | finish of discharge of the 1st chemical fluid from the said 1st nozzle in a said 1 process process. Or the substrate processing apparatus of 2.
The substrate processing apparatus according to claim 1, wherein the cleaning liquid includes carbonated water.
The first drug fluid includes a sulfuric acid-containing liquid,
The substrate processing apparatus according to claim 1, wherein the second chemical fluid includes an organic solvent.
A substrate holding step for holding the substrate in the processing chamber;
The first drug fluid is supplied from the first nozzle toward the main surface of the substrate by supplying the first drug fluid to the first nozzle through a drug fluid pipe connected to the first nozzle. A first processing step of discharging a fluid and applying a treatment using the first chemical fluid to the substrate;
A second processing step in which a second chemical fluid, which is a fluid different from the first chemical fluid, is supplied to the main surface of the substrate, and a process using the second chemical fluid is performed on the substrate; When,
Before and / or after the execution of the first processing step and / or before and / or after the execution of the second processing step, via a water pipe branched and connected to the drug fluid pipe A substrate replacement method comprising: a water replacement step of supplying water to the drug fluid pipe and replacing the inside of the drug fluid pipe with water.
13. The substrate processing method according to claim 12, further comprising a first suction step of sucking the inside of the chemical fluid piping after the water replacement step.
The first processing step includes a step of starting after the end of the second processing step,
14. The substrate processing method according to claim 12, wherein the water replacement step includes a first water replacement step that is performed prior to the second processing step.
The first processing step includes a step of starting after the end of the second processing step,
14. The substrate processing method according to claim 12, wherein the water replacement step includes a second water replacement step that is performed after the second processing step and prior to the first processing step.
A first supply of water to the main surface of the substrate prior to the first processing step to wash away the second chemical fluid from the main surface of the substrate with water after the second processing step. A water supply step,
The substrate processing method according to claim 15, wherein the first water supply step includes the second water replacement step.
The first processing step includes a step of starting after the end of the second processing step,
After the second processing step and prior to the first processing step, water is supplied to a second nozzle that is a nozzle different from the first nozzle, thereby the substrate from the second nozzle. A second water supply step of discharging water toward the main surface of
The substrate processing according to claim 12 or 13, wherein in the first processing step, the supply of the first chemical fluid to the chemical fluid piping is started before the end of the second water supply step. Method.
A second water supply step of supplying water from the second nozzle to the main surface of the substrate after the second treatment step;
The substrate processing method according to claim 12, wherein the first processing step is executed in parallel with the second water supply step.
14. The substrate according to claim 12, further comprising a second suction step of sucking the inside of the chemical fluid piping after completion of the discharge of the first chemical fluid from the first nozzle in the first processing step. Processing method.
The substrate processing method according to claim 12 or 13, wherein the cleaning liquid contains carbonated water.
The first drug fluid includes a sulfuric acid-containing liquid,
The substrate processing method according to claim 12, wherein the second chemical fluid includes an organic solvent.