KR20180128957A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The substrate processing apparatus includes a processing chamber, a substrate holding unit that is disposed in the processing chamber and holds the substrate, and a first nozzle having a discharge port for discharging the fluid toward the main surface of the substrate held by the substrate holding unit . The substrate processing apparatus includes a first processing step of ejecting a first chemical fluid from the first nozzle toward the main surface of the substrate and performing a process using the first chemical fluid on the substrate, A second processing step of supplying the processing liquid to the main surface of the substrate and performing the processing using the second chemical fluid on the substrate; and a second processing step before and / or after the execution of the first processing step and / The water from the first water supply unit is supplied to the medicine fluid pipe, and the water in the medicine fluid pipe is replaced with water, before and / or after the execution of the water replacement process.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a first chemical fluid and a second chemical fluid. Examples of the substrate include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for photomagnetic disks, A ceramic substrate, a solar cell substrate, and the like.

BACKGROUND ART [0002] In a manufacturing process of a semiconductor device or a liquid crystal display device, in order to perform processing with a chemical solution on the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel, a single- Devices may be used. The single wafer processing apparatus includes a spin chuck for rotating and rotating the substrate substantially horizontally in a processing chamber partitioned by a partition wall and a first chuck for supplying a first chemical liquid to the upper surface of the substrate held by the spin chuck And a second chemical liquid nozzle for supplying the second chemical liquid to the upper surface of the substrate held by the spin chuck. The first chemical liquid nozzle has a discharge port, and a chemical liquid pipe for supplying the chemical liquid from the chemical liquid supply source to the first chemical liquid nozzle is connected to the first chemical liquid nozzle.

In such a substrate processing apparatus, there are cases where the first chemical liquid and the second chemical liquid are brought into a dangerous combination (that is, a combination not suitable for contact). When a treatment using a combination of chemical fluids that is not suitable for such contact is carried out in one treatment chamber, a new personality is formed at the time of supplying one of the chemical fluids so as not to come into contact with the inside of the treatment chamber, (See, for example, Patent Literatures 1 and 2), when the detection value of the rotation speed of the substrate is out of the rotation speed range, prohibiting the individuality of the chemical liquid valve.

Japanese Patent Publication No. 4917469 Japanese Patent Publication No. 4917470

However, if the first nozzle is disposed in the vicinity of the spin chuck during the treatment using the second chemical fluid (second chemical fluid), the atmosphere containing the second chemical fluid enters the chemical fluid pipe (chemical fluid pipe) through the discharge port There is a concern. Entry of the atmosphere containing the second medicament fluid into the interior of the medicament fluid line may cause contact of the first medicament fluid and the second medicament fluid.

SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a medical fluid piping system which can prevent the occurrence of contact of the medicinal fluid inside the medicinal fluid piping even when a combination of plural kinds of medicinal fluid used for substrate processing is not suitable for contact, And to provide a substrate processing apparatus and a substrate processing method capable of completing processing using a chemical fluid of a kind in one processing chamber.

The present invention relates to a substrate processing apparatus comprising a processing chamber, a substrate holding unit disposed in the processing chamber, for holding the substrate, and a substrate holding unit for holding the substrate held by the substrate holding unit, A first chemical fluid supply unit connected to the first nozzle and having an inside communicating with the discharge port; a first chemical fluid supply unit for supplying a first chemical fluid to the chemical fluid pipe; For supplying a second chemical fluid, which is a fluid different in kind from the first chemical fluid, to the main surface of the substrate held by the substrate holding unit And a control device for controlling the first medicine fluid supply unit, the second medicine fluid supply unit, and the first water supply unit, A first processing step of discharging the first chemical fluid from the first nozzle toward the main surface of the substrate by supplying the first chemical fluid to the chemical fluid pipe to perform processing using the first chemical fluid on the substrate; A second processing step of supplying the second chemical fluid to the main surface of the substrate to perform processing using the second chemical fluid on the substrate; and a second processing step before and / or after the execution of the first processing step and And / or a water replacement step of supplying water from the first water supply unit to the medicine fluid pipe before and / or after the execution of the second treatment step and replacing the inside of the medicine fluid pipe with the water And a substrate processing apparatus.

According to this configuration, the first processing step using the first chemical fluid and the second chemical liquid supplying step using the second chemical fluid are executed in the common processing chamber. In the first process step, the first chemical fluid is discharged to the main surface of the substrate from the first nozzle by supplying the first chemical fluid to the chemical fluid pipe.

In addition, a water replacement step for replacing the inside of the chemical fluid pipe with water is performed before and / or after the first processing step and / or before and / or after the second processing step.

There is a case where the first chemical fluid remains inside the chemical fluid pipe after the completion of the first treatment process and / or before the start of the second treatment process. In this case, the first chemical fluid can be removed from the chemical fluid pipe by replacing the inside of the chemical fluid pipe with water after the completion of the first treatment process and / or before the start of the second treatment process. Therefore, at the start of the second treatment step, the first medicine fluid does not remain inside the medicine fluid pipe. Therefore, even if the second chemical fluid enters the chemical fluid piping in the second treatment step, the second chemical fluid does not come into contact with the first chemical fluid. This makes it possible to prevent the first chemical fluid and the second chemical fluid from contacting each other inside the chemical fluid pipe.

In addition, there is a case where the second chemical fluid is adhered to the inside of the chemical fluid pipe before the start of the first treatment process and / or after the end of the second treatment process. In this case, the second medicine fluid can be removed from the medicine fluid pipe by replacing the inside of the medicine fluid pipe with water before the start of the first treatment process and / or after the end of the second treatment process. Therefore, at the start of the first treatment step, the second medicine fluid does not remain in the medicine fluid pipe. Therefore, even if the first chemical fluid is supplied into the chemical fluid pipe in the first process step, the first chemical fluid does not come into contact with the second chemical fluid. This makes it possible to prevent the first chemical fluid and the second chemical fluid from contacting each other inside the chemical fluid pipe.

As described above, even when a combination of a plurality of types of pharmaceutical fluids (first and second pharmaceutical fluids) used in substrate processing is a combination that is not suitable for contact, the contact of their pharmaceutical fluids It is possible to provide a substrate processing apparatus capable of completing a process using a plurality of types of chemical fluids in a single processing chamber while preventing the occurrence of the chemical fluids.

In this specification, the term " combination not suitable for contact " is intended to include not only " a combination accompanied by a risk of contact, but also a combination that produces a product by contact ". The " combination which produces a product by contact " also includes a combination of an acid and an alkali.

According to an embodiment of the present invention, there is further provided an ink jet recording head comprising: an opposing member having a substrate facing surface opposed to a main surface of a substrate held by the substrate holding unit; .

According to this configuration, the opposing member facing the main surface of the substrate is formed, and the ejection port of the first nozzle is opened on the surface of the opposing member facing the substrate. Therefore, in the second process step, the second medicinal fluid may enter the inside of the medicinal fluid piping from the discharge port in accordance with the supply of the second medicinal fluid to the main surface of the substrate. Entry of the atmosphere containing the second medicament fluid into the interior of the medicament fluid line may cause contact of the first medicament fluid and the second medicament fluid.

However, the inside of the chemical fluid pipe is replaced with water before and / or after the execution of the first process step and / or before and / or after the execution of the second process step. Therefore, even when the opposing member opposing to the main surface of the substrate is formed and the ejection port of the first nozzle is opened on the surface of the opposing member facing the substrate, the first chemical fluid in the chemical fluid pipe and the second chemical fluid The contact of the medicine fluid can be prevented.

Further, the substrate processing apparatus may further include a suction unit for sucking the inside of the medicine fluid pipe. The control device may further perform a first suction process for further controlling the suction unit to suction the inside of the chemical fluid pipe after the completion of the water replacement process.

According to this configuration, after the completion of the water replacement step, the inside of the chemical fluid pipe is sucked. By this suction, water is removed from the inside of the medicine fluid pipe, and after the suction, water does not remain in the inside of the medicine fluid pipe, or the amount of water remaining in the inside of the medicine fluid pipe is small. This makes it possible to suppress or prevent the water from falling off from the first nozzle after the completion of the water replacement step and thus to suppress or prevent particle contamination on the main surface of the substrate.

The control device may start the first processing step after the end of the second processing step. The control device may execute the first water replacement step executed before the second processing step as the water replacement step.

According to this configuration, the first water replacement step is performed before the second processing step. Before the start of the second treatment process, there is a possibility that the first medicinal fluid used in the previous treatment remains in the inside of the medicinal fluid piping. However, by replacing the inside of the medicine fluid pipe with water before the second treatment process, the first medicine fluid does not remain in the inside of the medicine fluid pipe at the start of the second treatment process. Therefore, even if the second chemical fluid enters the chemical fluid pipe in the second process step, it does not come into contact with the first chemical fluid inside the chemical fluid pipe. This makes it possible to prevent the first chemical fluid and the second chemical fluid from contacting each other inside the chemical fluid pipe in the second process step.

Further, the control device may start the first processing step after the end of the second processing step. The control device may perform the second water replacement step after the second processing step and before the first processing step as the water replacement step.

According to this configuration, after the second treatment step, the second water replacement step is performed prior to the first treatment step. There is a possibility that the second chemical fluid used in the second treatment step enters the chemical fluid pipe after the completion of the second treatment process and before the start of the first treatment process and remains inside the chemical fluid pipe. However, by replacing the inside of the medicine fluid pipe with water before the first treatment process, the second medicine fluid does not remain in the inside of the medicine fluid pipe at the start of the first treatment process. Therefore, even if the first chemical fluid is supplied to the chemical fluid pipe in the first process step, it does not come into contact with the second chemical fluid. This makes it possible to prevent the first chemical fluid and the second chemical fluid from contacting each other inside the chemical fluid pipe in the first process step.

In order to wash the second chemical fluid from the main surface of the substrate after the second treatment step, the control device may further include a second treatment step for supplying water to the main surface of the substrate before the first treatment step, A water supply process may be further executed. The control device may perform the second water replacement step in the first water supply step.

According to this configuration, a second water replacement step for replacing the inside of the chemical fluid pipe with water is performed in parallel with the first water supply step for washing the second chemical fluid from the main surface of the substrate after the second treatment step . As a result, the total processing time can be shortened as compared with the case where the first water supply step is performed at the timing of the second water replacement step.

The substrate processing apparatus may further include: a second nozzle different from the first nozzle, for discharging the fluid toward the main surface of the substrate held by the substrate holding unit; and a second nozzle for supplying water to the second nozzle And a second water supply unit for the water supply unit. The control device may further control the second water supply unit. Wherein the control device is configured to start the first processing step after the end of the second processing step and to supply water to the second nozzle after the second processing step and before the start of the first processing step A second water supply step of starting water discharge from the second nozzle toward the main surface of the substrate may be performed. The control device may start the supply of the first chemical fluid to the chemical fluid pipe in the first process step prior to the end of the second water supply process.

According to this configuration, the first chemical fluid can be discharged from the discharge port immediately after the end of the second water supply. That is, the first treatment process can be started immediately after the end of the second water supply process. Thus, the entire processing time can be shortened.

Further, the control device may start the first process step before the end of the second water supply step.

According to this configuration, the first chemical fluid can be discharged from the discharge port before the end of the second water supply step. Thus, the entire processing time can be further shortened.

The control device may further perform a second suction process for sucking the inside of the medicine fluid pipe after completion of the discharge of the first medicine fluid from the first nozzle in the one treatment process.

The cleaning liquid may contain carbonated water.

In addition, the first chemical fluid may include a sulfuric acid-containing liquid, and the second chemical fluid may include an organic solvent.

The present invention relates to a method of manufacturing a substrate processing apparatus, which comprises a substrate holding step of holding a substrate in a processing chamber, and a step of supplying a first chemical fluid from the first nozzle toward a main surface of the substrate by supplying the first chemical fluid to a chemical fluid pipe connected to the first nozzle A first processing step of discharging a fluid and performing a process using the first chemical fluid on the substrate; and a second chemical fluid, which is a fluid different from the first chemical fluid, is supplied to a main surface of the substrate, A second processing step of performing processing using the second chemical fluid on the substrate; and a second processing step before and / or after the first processing step and / or before and / or after the execution of the second processing step And a water replacement step of supplying water from the first water supply unit to the chemical fluid piping and replacing the inside of the chemical fluid piping with the water, It provides the law.

According to this method, the first processing step using the first chemical fluid and the second chemical liquid supplying step using the second chemical fluid are executed in the common processing chamber. In the first process step, the first chemical fluid is discharged to the main surface of the substrate from the first nozzle by supplying the first chemical fluid to the chemical fluid pipe.

In addition, a water replacement step for replacing the inside of the chemical fluid pipe with water is performed before and / or after the first processing step and / or before and / or after the second processing step.

There is a case where the first chemical fluid remains inside the chemical fluid pipe after the completion of the first treatment process and / or before the start of the second treatment process. In this case, the first chemical fluid can be removed from the chemical fluid pipe by replacing the inside of the chemical fluid pipe with water after the completion of the first treatment process and / or before the start of the second treatment process. Therefore, at the start of the second treatment step, the first medicine fluid does not remain inside the medicine fluid pipe. Therefore, even if the second chemical fluid enters the chemical fluid piping in the second treatment step, the second chemical fluid does not come into contact with the first chemical fluid. This makes it possible to prevent the first chemical fluid and the second chemical fluid from contacting each other inside the chemical fluid pipe.

In addition, there is a case where the second chemical fluid is adhered to the inside of the chemical fluid pipe before the start of the first treatment process and / or after the end of the second treatment process. In this case, the second medicine fluid can be removed from the medicine fluid pipe by replacing the inside of the medicine fluid pipe with water before the start of the first treatment process and / or after the end of the second treatment process. Therefore, at the start of the first treatment step, the second medicine fluid does not remain in the medicine fluid pipe. Therefore, even if the first chemical fluid is supplied into the chemical fluid pipe in the first process step, the first chemical fluid does not come into contact with the second chemical fluid. This makes it possible to prevent the first chemical fluid and the second chemical fluid from contacting each other inside the chemical fluid pipe.

As described above, even if a combination of a plurality of types of pharmaceutical fluids (first and second pharmaceutical fluids) used in substrate processing is a combination that is not suitable for contact, It is possible to provide a substrate processing apparatus capable of completing a process using a plurality of types of chemical fluids in a single processing chamber while preventing the occurrence of the chemical fluids.

In this specification, the term " combination not suitable for contact " is intended to include not only " a combination accompanied by a risk of contact, but also a combination that produces a product by contact ". The " combination which produces a product by contact " also includes a combination of an acid and an alkali.

In one embodiment of the present invention, the substrate processing method further includes a first suction step of sucking the inside of the chemical fluid pipe after the completion of the water replacement step.

According to this method, after the completion of the water replacement step, the inside of the chemical fluid pipe is sucked. By this suction, water is removed from the inside of the medicine fluid pipe, and after the suction, water does not remain in the inside of the medicine fluid pipe, or the amount of water remaining in the inside of the medicine fluid pipe is small. Accordingly, it is possible to suppress or prevent the water from dropping out of the water from the first nozzle after completion of the water replacement step, so that particle contamination on the main surface of the substrate can be suppressed or prevented.

The first processing step may include a step of starting after the end of the second processing step. The water replacement step may include a first water replacement step performed before the second processing step.

According to this method, the first water replacement step is performed before the second processing step. Before the start of the second treatment process, there is a possibility that the first medicinal fluid used in the previous treatment remains in the inside of the medicinal fluid piping. However, by replacing the inside of the medicine fluid pipe with water before the second treatment process, the first medicine fluid does not remain in the inside of the medicine fluid pipe at the start of the second treatment process. Therefore, even if the second chemical fluid enters the chemical fluid pipe in the second process step, it does not come into contact with the first chemical fluid inside the chemical fluid pipe. This makes it possible to prevent the first chemical fluid and the second chemical fluid from contacting each other inside the chemical fluid pipe in the second process step.

The first processing step may include a step of starting after the end of the second processing step. The water replacement step may include a second water replacement step performed after the second processing step and before the first processing step.

According to this method, after the second treatment step, the second water replacement step is performed prior to the first treatment step. There is a possibility that the second chemical fluid used in the second treatment step enters the chemical fluid pipe after the completion of the second treatment process and before the start of the first treatment process and remains inside the chemical fluid pipe. However, by replacing the inside of the medicine fluid pipe with water before the first treatment process, the second medicine fluid does not remain in the inside of the medicine fluid pipe at the start of the first treatment process. Therefore, even if the first chemical fluid is supplied to the chemical fluid pipe in the first process step, it does not come into contact with the second chemical fluid. This makes it possible to prevent the first chemical fluid and the second chemical fluid from contacting each other inside the chemical fluid pipe in the first process step.

In order to wash the second chemical fluid from the main surface of the substrate after the second treatment step, the substrate treatment method may further include a step of supplying water to the main surface of the substrate before the first treatment step, 1 water supply process may be further included. The first water supply step may include the second water replacement step.

According to this method, after the second treatment step, a second water replacement step for replacing the inside of the chemical fluid pipe with water is performed in parallel with the first water supply step for washing the second chemical fluid from the main surface of the substrate with water . As a result, the total processing time can be shortened as compared with the case where the first water supply step is performed at the timing of the second water replacement step.

The first processing step may include a step of starting after the end of the second processing step. The substrate processing method may further include a second water supply step of discharging water from the second nozzle, which is a nozzle different from the first nozzle, toward the main surface of the substrate after the second processing step and before the first processing step May be further included. The first treatment step may start the supply of the first chemical fluid to the chemical fluid pipe prior to the end of the second water supply step.

According to this method, the first chemical fluid can be discharged from the discharge port immediately after the end of the second water supply step. That is, the first treatment process can be started immediately after the end of the second water supply process. Thus, the entire processing time can be shortened.

The substrate processing method may further include a second water supply step of supplying water from the second nozzle to the main surface of the substrate after the second processing step. The substrate processing method may execute the first processing step in parallel with the second water supply step.

According to this method, the first chemical fluid can be discharged from the discharge port before the end of the second water supply step. Thus, the entire processing time can be further shortened.

The substrate processing method may further include a second suction step of sucking the inside of the chemical fluid pipe after completion of the discharge of the first chemical fluid from the first nozzle in the one process step .

The cleaning liquid may contain carbonated water.

In addition, the first chemical fluid may include a sulfuric acid-containing liquid, and the second chemical fluid may include an organic solvent.

The above or other objects, features and advantages of the present invention will become apparent from the following description of the embodiments with reference to the accompanying drawings.

1 is a schematic plan view for explaining the layout of the inside of a substrate processing apparatus according to an embodiment of the present invention.
2A is a schematic sectional view for explaining a configuration example of a processing unit provided in the substrate processing apparatus.
FIG. 2B is a view for specifically describing the configuration of the periphery of the opposing member included in the processing unit. FIG.
2C is a diagrammatic sectional view showing an enlarged configuration example of the lower part of the processing unit.
3 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus.
4 is a flowchart for explaining an example of the first substrate processing by the processing unit.
5A and 5B are diagrams for explaining the first substrate processing example.
Figures 5C-5D are schematic illustrations for illustrating the process following Figure 5B.
5E-5F are diagrams for explaining the process subsequent to FIG. 5D.
Figures 5g-5h are schematic illustrations to illustrate the process that follows Figure 5f.
FIG. 6 is a diagram for explaining the monitoring situation by the first liquid detection sensor and the second liquid detection sensor in the main steps of the first substrate processing example. FIG.
7 is a diagram for explaining a hard interlock in the first substrate processing example.
8 is a schematic view for explaining an example of the second substrate processing by the processing unit.
9 is a schematic diagram for explaining an example of the third substrate processing by the processing unit.

1 is a schematic plan view for explaining the layout of the inside of the substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing apparatus 1 is a single wafer type apparatus for processing substrates W such as a silicon wafer one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 for processing a substrate W with a processing liquid and a carrier C for accommodating a plurality of substrates W to be processed by the processing unit 2 A transport robot IR and CR for transporting the substrate W between the load port LP and the processing unit 2 and a substrate processing apparatus 1 for transporting the substrate W between the load port LP and the processing unit 2, And a control device 3 for controlling. The transport robot IR transports the substrate W between the carrier C and the substrate transport robot CR. The substrate transport robot CR transports the substrate W between the transport robot IR and the processing unit 2. [ The plurality of processing units 2 have, for example, the same configuration.

2A is a schematic sectional view for explaining a configuration example of the processing unit 2. Fig.

The processing unit 2 includes a box-shaped processing chamber 4 and a single substrate W held in a horizontal posture in the processing chamber 4, A spin chuck (substrate holding unit) 5 for rotating the substrate W around the line A1 and a substrate facing surface (main surface) facing the upper surface (main surface) of the substrate W held by the spin chuck 5 6). ≪ / RTI > The opposing member 7 includes a first nozzle 9 having a first discharge port (discharge port) 8 for discharging a fluid toward the center of the upper surface of the substrate W held by the spin chuck 5, A second nozzle 11 having a second discharge port 10 for discharging a fluid toward the center of the upper surface of the substrate W held by the spin chuck 5 and a second nozzle 11 serving as a liquid organic solvent An organic solvent supply unit (first medicinal fluid supply unit) 12 for supplying an isopropyl alcohol (IPA) as an example of the organic solvent having a low surface tension to the first nozzle 9, A rinsing water supply unit (second water supply unit) 13 for supplying water (for example carbonated water) as a rinsing liquid to the nozzle 11 and a rinsing water supply unit An example of a sulfuric acid-containing liquid as the second medicine fluid (sulfuric acid / hydrog containing liquid supply unit (second chemical fluid supply unit) 14 for supplying a peroxide mixture (SPM) to the spin chuck 5 and a substrate W supported on the spin chuck 5, SC1 include (NH ₄ liquid containing OH and H ₂ O ₂₎ for supplying cleaning liquid supply unit 15 and the processing of the cup is tubular surrounding the spin chuck 5 to 16.

The processing chamber 4 includes a box-shaped partition wall 18 for accommodating the spin chuck 5 and nozzles and clean air (air filtered by the filter) from the upper portion of the partition wall 18 into the partition wall 18 And an FFU (fan filter unit) 19 as an air blowing unit.

The FFU 19 is disposed above the partition 18 and is mounted on the ceiling of the partition 18. [ The FFU 19 sends clean air downward into the processing chamber 4 from the ceiling of the partition 18. An exhaust liquid pipe 81 is connected to the bottom of the processing cup 16 and the exhaust liquid pipe 81 is connected to an exhaust processing facility formed in a factory where the substrate processing apparatus 1 is installed, 4). Therefore, the downflow (downflow) flowing downward in the processing chamber 4 is formed by the FFU 19 and the exhaust liquid pipe 81. The processing of the substrate W is carried out in a state in which a downflow is formed in the processing chamber 4. [

As the spin chuck 5, a clamping chuck for holding the substrate W horizontally by sandwiching the substrate W in the horizontal direction is employed. Specifically, the spin chuck 5 is equipped with a spin motor 22, a lower spin shaft 23 integrated with the drive shaft of the spin motor 22, and a lower spin shaft 23 mounted substantially horizontally at the upper end of the lower spin shaft 23 And a spin base 24 on the disk.

On the upper surface of the spin base 24, a plurality of (three or more, for example, six) nipping members 25 are disposed in the peripheral portion. The plurality of nipping members 25 are arranged at an appropriate interval on a circumference corresponding to the outer circumferential shape of the substrate W in the peripheral edge portion of the upper surface of the spin base 24. [

The spin chuck 5 is not limited to the narrow one and may be formed by holding the substrate W in a horizontal posture by, for example, vacuum suctioning the back surface of the substrate W, (Vacuum chuck) which rotates the substrate W held by the spin chuck 5 by rotating the substrate W around the rotation axis line as shown in Fig.

Fig. 2B is a diagram for specifically describing the configuration of the periphery of the opposing member 7 included in the processing unit 2. Fig.

2A and 2B, the opposing member 7 includes a blocking plate 26 and an upper spin axis 27 formed coaxially with the blocking plate 26. As shown in Fig. The blocking plate 26 is a disk-shaped disk having a diameter substantially equal to or larger than that of the substrate W. The substrate opposing surface 6 forms a lower surface of the shielding plate 26 and is circular opposite to the entire upper surface of the substrate W. [

At the center of the substrate facing surface 6 is formed a cylindrical through hole 28 penetrating the blocking plate 26 and the upper spin axis 27 up and down. The inner peripheral wall of the through hole 28 is partitioned by a cylindrical surface. A first nozzle (9) and a second nozzle (11) are inserted into the through hole (28). The first and second nozzles 9 and 11 extend upward and downward along the axis of rotation A2 of the upper spin shaft 27 (coaxial with the axis of rotation A1).

Concretely, a central axis nozzle 29 extending vertically along the axis of rotation A2 of the blocking plate 26 is inserted into the through-hole 28. 2B, the central shaft nozzle 29 is provided with first and second nozzles 9 and 11 and a cylindrical casing 30 surrounding the first and second nozzles 9 and 11 . In this embodiment, each of the first and second nozzles 9 and 11 is an inner tube. The first discharge port (8) is formed at the lower end of the first nozzle (9). The second discharge port (10) is formed at the lower end of the second nozzle (11). The casing (30) extends in the vertical direction along the axis of rotation (A2). The casing (30) is inserted into the through hole (28) in a noncontact state. Therefore, the inner periphery of the blocking plate 26 is spaced apart in the radial direction and surrounds the outer periphery of the casing 30. [

As shown in FIG. 2A, a blocking plate rotating unit 31 is coupled to the upper spin shaft 27. The blocking plate rotating unit 31 rotates the upper spin axis 27 of the blocking plate 26 about the rotation axis A2. The blocking plate 26 is coupled to a blocking plate lifting unit 32 having an electric motor, a ball screw, and the like. The blocking plate lifting unit 32 lifts the blocking plate 26 for the center shaft nozzle 29 in the vertical direction. The blocking plate lifting unit 32 is configured such that the substrate opposing face 6 of the blocking plate 26 is located close to the upper surface of the substrate W held by the spin chuck 5 The blocking plate 26 and the central axis nozzle 29 are raised and lowered between retracted positions (see Figs. 2A and 5G, etc.) formed above the proximity position. The blocking plate lifting unit 32 is capable of holding the blocking plate 26 at each position between the close position and the retreat position.

In addition, with respect to the shield plate 26, a shield plate proximity position sensor 33 (not shown in Figs. 2A to 2C) for detecting the arrangement of the shield plate 26 at a close position is formed.

2B, the organic solvent supply unit 12 includes an organic solvent pipe (pharmaceutical fluid pipe) 34 connected to the first nozzle 9 and internally communicating with the first discharge port 8, A first organic solvent valve 35 which is interposed in the organic solvent pipe 34 and opens and closes the organic solvent and an organic solvent pipe 35 which is interposed in the organic solvent pipe 34 on the downstream side of the first organic solvent valve 35, A second organic solvent valve 36 for opening and closing the solvent, and a valve closing sensor 37 for detecting that the first organic solvent valve 35 is in a closed state.

2B, in the organic solvent pipe 34, at the first branch position 38 set between the first organic solvent valve 35 and the second organic solvent valve 36, the first water pipe 39 are connected in a branch. In the following description, the downstream portion 40 on the downstream side of the first branching position 38 in the organic solvent pipe 34 is referred to as the " organic solvent downstream portion 40 ". The upstream portion 41 on the upstream side of the first branching position 38 in the organic solvent pipe 34 is referred to as the " organic solvent upstream portion 41 ". In this embodiment, the first branch position 38 is set at a position near the top of the organic solvent pipe 34. The second nozzle 11 (the second discharge port 10) of the first organic solvent valve 35 after the formation of the organic solvent valve 35 is filled with the organic solvent (For example, about 3 seconds).

When the first organic solvent valve 35 is opened, the organic solvent from the organic solvent supply source is supplied to the second organic solvent valve 36. When the second organic solvent valve 36 is opened in this state, the organic solvent supplied to the second organic solvent valve 36 is discharged from the first discharge port 8 toward the center of the upper surface of the substrate W.

2B, at a predetermined first detection position 42 upstream of the intervening position of the second organic solvent valve 36 in the organic solvent downstream portion 40, And a first liquid detection sensor 43 for detecting the presence or absence of liquid in the liquid chamber 40 is disposed. The first liquid detection sensor 43 detects the presence or absence of liquid in the organic solvent pipe 34 at the first detection position 42 and sends a signal according to the detection result to the control device 3 do. When the tip of the liquid inside the organic solvent pipe 34 is advanced (located on the first nozzle 9 side) than the first detection position 42, the first liquid detection sensor 43 detects the liquid Is detected. When the tip of the liquid inside the organic solvent pipe 34 is retreating (located on the organic solvent supply source side) than the first detection position 42, depending on the first liquid detection sensor 43, Is not detected.

2B, at a predetermined second detection position 44 on the downstream side of the intervening position of the second organic solvent valve 36 in the organic solvent downstream portion 40, And a second liquid detection sensor 45 for detecting the presence or absence of the liquid inside the liquid detection sensor 40 is disposed. The second liquid detection sensor 45 detects the presence or absence of the liquid inside the organic solvent pipe 34 at the second detection position 44 and sends a signal according to the detection result to the control device 3 do. When the tip of the liquid inside the organic solvent pipe 34 is advanced (positioned on the first nozzle 9 side) than the second detection position 44, the liquid is detected by the second liquid detection sensor 45 Is detected. Depending on the second liquid detection sensor 45 when the tip of the liquid inside the organic solvent pipe 34 is retreating (located on the organic solvent supply source side) than the second detection position 44, It does not.

The first liquid detection sensor 43 and the second liquid detection sensor 45 are respectively a fiber sensor for liquid detection (for example, FU95S manufactured by Keyens Co., Ltd.), an organic solvent pipe 34, Or directly attached to the outer circumferential wall of the frame. The first liquid detection sensor 43 and / or the second liquid detection sensor 45 may be constituted by, for example, a capacitive sensor.

2B, water (for example, carbonated water) is supplied to the first water pipe 39 from a water supply source. A first water valve 46 for opening and closing the first water pipe 39 is interposed in the middle of the first water pipe 39. When the first water valve 46 is opened, it is supplied from the first water pipe 39 to the organic solvent downstream portion 40. When the first water valve 46 is closed, the supply of water from the first water pipe 39 to the organic solvent downstream portion 40 is stopped. The water supplied from the first water pipe 39 to the organic solvent pipe 34 is, for example, carbonated water. The first water pipe 39 and the first water valve 46 are included in the replacement water supply unit (first water supply unit) 47.

2B, the second branching position 48, which is set in the middle of the first water pipe 39 (i.e., between the first branching position 38 and the first water valve 46) And a pipe 49 is branched. In the following description, the downstream portion 50 on the downstream side of the second branching position 48 in the first water pipe 39 is referred to as " water downstream portion 50 ".

As shown in FIG. 2B, a suction valve 51 for opening and closing the suction pipe 49 is interposed in the middle of the suction pipe 49. A suction device 52 is connected to the tip of the suction pipe 49. The suction device 52 includes, for example, a vacuum generator 53 and a drive valve 54 for operating the vacuum generator 53, as shown in Fig. 2A. The suction device 52 is not limited to generating a suction force by generating vacuum, and may be, for example, an aspirator.

The first organic solvent valve 35 and the first water valve 46 are closed and the second organic solvent valve 35 is closed in the operating state of the suction device 52 (vacuum generator 53) The function of the suction device 52 is validated and the interior of the downstream portion 40 of the organic solvent and the downstream portion 50 of the water are exhausted and the organic solvent downstream The liquid (water or organic solvent) contained in the side portion 40 and the water downstream portion 50 is drawn into the suction pipe 49. The suction device 52 and the suction valve 51 are included in the suction unit 55.

2B, the rinsing water supply unit 13 includes a second water pipe 56 connected to the second nozzle 11 and internally communicating with the second discharge port 10, And a second water valve 57 for opening and closing the pipe 56 to switch the supply and stop of the supply of water from the second water pipe 56 to the second nozzle 11. The water from the water supply source is supplied to the second water pipe 56 and discharged toward the center of the upper surface of the substrate W from the second discharge port 10 when the second water valve 57 is opened.

2A, the processing unit 2 further includes an inert gas pipe 58 for supplying an inert gas to a cylindrical space between the outer periphery of the casing 30 and the inner periphery of the shield plate 26, , And an inert gas valve (59) interposed in the inert gas pipe (58). When the inert gas valve 59 is opened, the inert gas from the inert gas supply source passes between the outer periphery of the casing 30 and the inner periphery of the shield plate 26 and is discharged downward from the center of the lower surface of the shield plate 26 do. When the inert gas valve 59 is opened in a state where the blocking plate 26 is disposed in the proximity position, the inert gas discharged from the center of the lower surface of the blocking plate 26 contacts the upper surface of the substrate W and the blocking plate (In a direction away from the axis of rotation A1) between the substrate W and the substrate facing surface 6 of the substrate W and the air in the substrate W and the shield plate 26 is replaced with an inert gas. The inert gas flowing through the inert gas pipe 58 is, for example, nitrogen gas. The inert gas is not limited to nitrogen gas but may be another inert gas such as helium gas or argon gas.

2A, the sulfuric acid-containing liquid supply unit 14 includes a sulfuric acid-containing liquid nozzle 60, a sulfuric acid-containing liquid pipe 61 connected to the sulfuric acid-containing liquid nozzle 60, Containing liquid valve (62) interposed in the second nozzle moving unit (61) and a first nozzle moving unit (63) for moving the sulfuric acid containing liquid nozzle (60). The first nozzle moving unit 63 includes a motor and the like. The first nozzle moving unit 63 is coupled with a nozzle retraction sensor 64 for detecting that the sulfuric acid-containing liquid nozzle 60 is in the retreat position.

When the first nozzle moving unit 63 is constituted by, for example, a stepping motor, the movement amount of the sulfuric acid-containing liquid nozzle 60 (the rotation angle of the arm , The nozzle retraction sensor 64 can detect whether or not the sulfuric acid-containing liquid nozzle 60 is in the retreat position.

The sulfuric acid-containing liquid nozzle 60 is, for example, a straight nozzle for discharging the liquid in a continuous flow state. The sulfuric acid-containing liquid is supplied to the sulfuric acid-containing liquid pipe 61 from the sulfuric acid-containing liquid supply source. In this embodiment, a sulfuric acid / hydrogen peroxide mixture (SPM) at a high temperature (for example, about 170 ° C to about 200 ° C) is supplied to the sulfuric acid-containing liquid pipe 61 as a sulfuric acid- . By the heat of reaction between the sulfuric acid and the hydrogen peroxide water, the SPM heated to the high temperature is supplied to the sulfuric acid-containing liquid pipe 61.

When the sulfuric acid-containing liquid valve 62 is opened, the high-temperature SPM supplied to the sulfuric acid-containing liquid nozzle 60 from the sulfuric acid-containing liquid pipe 61 is discharged downward from the sulfuric acid- When the sulfuric acid-containing liquid valve 62 is closed, the discharge of the high-temperature SPM from the sulfuric acid-containing liquid nozzle 60 is stopped. The first nozzle moving unit 63 is configured to move the processing position where the high temperature SPM discharged from the sulfuric acid containing liquid nozzle 60 is supplied to the upper surface of the substrate W and the processing position where the sulfuric acid containing liquid nozzle 60 is rotated, The sulfuric acid-containing liquid nozzle 60 is moved between the retreat positions retracted to the side of the chuck 5.

2A, the cleaning agent supply unit 15 includes a cleaning agent solution nozzle 65, a cleaning agent solution pipe 66 connected to the cleaning agent solution nozzle 65, and a cleaning agent solution pipe 66 connected to the cleaning agent solution pipe 66 And a second nozzle moving unit 68 for moving the cleaning liquid nozzle 65. The second nozzle moving unit 68 moves the cleaning liquid, The cleaning liquid solution nozzle 65 is, for example, a straight nozzle for ejecting liquid in a continuous flow state. (For example, SC1) is supplied to the cleaning solution piping 66 from the cleaning solution supply source.

SC1 supplied to the cleaning solution nozzle 65 from the cleaning solution piping 66 is discharged downward from the cleaning solution nozzle 65 when the cleaning solution valve 67 is opened. When the cleaning liquid valve 67 is closed, the discharge of the cleaning liquid from the cleaning liquid nozzle 65 is stopped. The second nozzle moving unit 68 moves the processing position where the SC1 discharged from the cleaning solution nozzle 65 is supplied to the upper surface of the substrate W and the processing position where the cleaning solution nozzle 65 is rotated in the direction of the spin chuck 5, The cleaning solution nozzle 65 is moved between the retreat positions retracted to the side of the cleaning solution nozzle 65. The second nozzle moving unit 68 is disposed at a central position where the cleaning chemical liquid discharged from the cleaning chemical liquid nozzle 65 adheres to the central portion of the upper surface of the substrate W and a central position where the cleaning chemical liquid discharged from the cleaning chemical liquid nozzle 65 The cleaning liquid nozzle 65 is moved horizontally between the circumferential edge positions where the liquid contacts the periphery of the upper surface of the substrate W. [ The center position and the peripheral edge position are both processing positions.

Fig. 2C is a schematic sectional view showing an enlarged configuration example of the lower part of the processing unit 2. Fig.

2A and 2C, the processing cup 16 is provided with first and second processing chambers for surrounding the spin chuck 5 and for receiving the processing liquid (cleaning liquid and rinsing liquid) scattered around the substrate W, And a guard elevating unit 73 for independently elevating and lowering the individual guards 71 and 72. [ The guard elevating unit 73 independently elevates the individual guards 71 and 72. The guard elevating unit 73 includes, for example, a ball screw mechanism.

The treatment cup 16 is accommodated so as to overlap in the vertical direction and the guard elevating unit 73 elevates and lifts at least one of the two guards 71 and 72 so that the treatment cup 16 is deployed and accommodated.

The first guard 71 on the inner side surrounds the spin chuck 5 and has a shape that is substantially rotationally symmetrical with respect to the rotation axis A1 of the substrate W by the spin chuck 5. 2C, the first guard 71 includes a bottom 74 formed in an annular shape when viewed in a plan view, a cylindrical portion 74 extending upward from the inner periphery of the bottom 74, A cylindrical outer wall portion 76 rising upward from the outer peripheral edge of the bottom portion 74 and a cylindrical wall portion 76 rising upward from a part of the bottom portion 74 corresponding to the space between the inner peripheral edge and the outer peripheral edge And a cylindrical guide portion 77 integrally.

The guide portion 77 includes a cylindrical main body portion 78 rising from the bottom portion 74 and a guide portion 77 extending in the direction of approaching the rotation axis A1 And a tubular upper end 79 extending obliquely upward.

A first drainage groove 80 for collecting and dispensing treatment liquids (sulfuric acid-containing liquid, cleaning liquid and water) used in the treatment of the substrate W is provided between the inner wall portion 75 and the guide portion 77, . At the lowest point of the bottom of the first drainage groove 80, an exhaust liquid pipe 81 extending from a negative pressure source (not shown) is connected. The interior of the first drainage groove 80 is forcibly evacuated and the treatment liquid collected in the first drainage groove 80 and the atmosphere in the first drainage groove 80 are discharged through the exhaust liquid pipe 81 . The treatment liquid discharged together with the atmosphere is separated from the atmosphere by the gas-liquid separator 97 interposed in the middle of the exhaust liquid pipe 81. Liquid separation branch piping 82, the cleaning chemical liquid branch piping 83, and the water branch piping 84) are connected to the exhaust liquid pipe 81 via the gas-liquid separator 97, And a liquid drain valve 85 is interposed therebetween. Each of the liquid-dispensing branch valves 85 includes a second valve-closing sensor 95 for detecting that the liquid-dispensing branch valve 85 is in the closed state.

Only the drain valve 85 for the sulfuric acid-containing liquid branch pipe 82 is opened and the exhaust liquid pipe 81 is opened in the drain valve 81 The circulating treatment liquid is supplied to the sulfuric acid-containing liquid branch pipe 82, and then sent to a treatment apparatus (not shown) for draining the sulfuric acid-containing liquid.

In the first and second rinsing steps (step S4 and step S6 in Fig. 4) described later, only the liquid pouring valve 85 for the water branch pipe 84 is opened in the liquid pouring valve 85, The treatment liquid flowing through the liquid pipe 81 is supplied to the water branch pipe 84 and then sent to a treatment device (not shown) for draining the water.

4), only the drain valve 85 for the cleaning chemical liquid branch pipe 83 is opened and the exhaust liquid pipe 81 is opened in the drain liquid branch valve 85, Is supplied to the branch pipe 83 for the cleaning chemical solution, and then sent to a treatment device (not shown) for treating the cleaning chemical solution.

Between the guide portion 77 and the outer wall portion 76 is a second drainage groove 86 for collecting and recovering the organic solvent used for the processing of the substrate W. [ In the second drainage groove 86, for example, one end of the exhaust pipe 87 is connected to the bottom. As a result, the interior of the second drainage groove 86 is forcedly exhausted and the atmosphere in the second drainage groove 86 is exhausted through the exhaust pipe 87.

The other end of the exhaust pipe 87 is connected to a negative pressure source (not shown). The exhaust pipe 87 is provided with an exhaust valve 101 for opening and closing the exhaust pipe 87. The exhaust valve 101 is provided with a valve opening sensor 21 for detecting that the exhaust valve 101 is in an open state.

The outer second guard 72 has a shape that is almost rotationally symmetrical with respect to the axis of rotation A1. The second guard 72 surrounds the periphery of the spin chuck 5 on the outside of the guide portion 77 of the first guard 71. An upper end portion 88 of the second guard 72 is formed with an opening 89 having a larger diameter than the substrate W held by the spin chuck 5. The upper end 90 of the second guard 72, The opening 89 defines an opening.

The second guard 72 includes a lower end portion 91 coaxially cylindrical with the guide portion 77 and a second guard portion 76 extending in the direction of approaching the center side (in the direction approaching the rotation axis A1) while forming a smooth arc from the upper end of the lower end portion 91, A tubular upper end portion 88 extending obliquely upward and a folded back portion 92 formed by folding the distal end of the upper end portion 88 downward.

The lower end portion 91 is formed on the second drainage groove 86 and has a length accommodated in the second drainage groove 86 in a state in which the first guard 71 and the second guard 72 are closest to each other have. The upper end portion 88 is formed so as to overlap with the upper end portion 79 of the guide portion 77 of the first guard 71 in the vertical direction and the first guard 71 and the second guard 72 are located closest to each other And is formed so as to be in close proximity to the upper end 79 of the guide portion 77 while maintaining a very small clearance. The folded back portion 92 is formed so as to overlap with the upper end 79 of the guide portion 77 in the horizontal direction in a state in which the first guard 71 and the second guard 72 are closest to each other.

2A, the guard elevating and lowering unit 73 is provided between the upper position where the upper end of the guard is positioned above the substrate W and the lower position where the upper end of the guard is located below the substrate W , And the guards 71 and 72 are raised and lowered. The guard elevating unit 73 can hold the guards 71 and 72 at an arbitrary position between the upper and lower positions. The supply of the processing liquid to the substrate W and the drying of the substrate W are carried out in a state in which the guards 71 and 72 are opposed to the peripheral surface of the substrate W. [

When the inner first guard 71 is opposed to the peripheral edge of the substrate W, both the first and second guards 71 and 72 are disposed at the upper position as shown in FIG. 5A and the like. In this state, the folded-back portion 92 is overlapped with the upper end 79 of the guide portion 77 in the horizontal direction.

A guard position sensor 93 for detecting the arrangement of the first guard 71 with respect to the upper position and a second guard 71 for detecting the arrangement of the first guard 71 relative to the upper position, A guard-down position sensor 94 is formed.

On the other hand, when the outer second guard 72 is opposed to the peripheral edge of the substrate W, as shown in Figs. 2A and 5G, the second guard 72 is disposed at the upper position, The guard 71 is disposed at the lower position.

3 is a block diagram for explaining an electrical configuration of a main portion of the substrate processing apparatus 1. As shown in Fig.

The control device 3 is configured using, for example, a microcomputer. The control device 3 has a calculation unit such as a CPU, a fixed memory device, a storage unit such as a hard disk drive, and an input / output unit. In the storage unit, a program to be executed by the calculation unit is stored.

And controls the operations of the second nozzle moving units 63 and 68, the blocking plate rotating unit 31, the blocking plate elevating unit 32, and the guard elevating unit 73 and the like. The control device 3 includes a first organic solvent valve 35, a second organic solvent valve 36, a first water valve 46, a suction valve 51, a drive valve 54, And opens and closes the valve 57, the inert gas valve 59, the sulfuric acid-containing liquid valve 62, the cleaning liquid valve 67, the liquid discharge branch valve 85, and the like. The detection output of the first valve opening sensor 21, the detection output of the closing plate proximity position sensor 33, the detection output of the valve closing sensor 37, the first liquid detection sensor 43 The detection output of the second liquid detection sensor 45, the detection output of the nozzle retraction sensor 64, the detection output of the guard position sensor 93, the detection output of the guard position sensor 94, And the detection output of the two valve closing sensor 95 are input.

Fig. 4 is a flowchart for explaining an example of the first substrate processing by the processing unit 2. Fig. 5A to 5H are schematic diagrams for explaining the first substrate processing example.

Hereinafter, the first substrate processing example will be described with reference to Figs. 2A to 4B. Refer to Figs. 5A to 5H as appropriate. The first substrate processing example is a resist removal processing for removing a resist formed on the upper surface of the substrate W. [ As described below, in the first substrate processing example, the sulfuric acid-containing liquid process S3 for processing the substrate W using a sulfuric acid-containing liquid such as SPM and the liquid organic solvent process such as IPA And an organic solvent step (S7) for treating the wax (W). The sulfuric acid-containing liquid and the organic solvent are combinations of a chemical fluid (a chemical liquid or a gas containing a chemical ingredient) accompanied by a risk of contact (a sudden reaction in this case).

When the resist removal processing is performed on the substrate W by the processing unit 2, the substrate W after high-dose ion implantation processing is carried into the processing chamber 4 (Step S1). It is assumed that the substrate W to be carried is not subjected to the process for ashing the resist. On the surface of the substrate W, a fine pattern with a high aspect ratio is formed.

Specifically, the control device 3 causes the opposing member 7 (that is, the blocking plate 26 and the central axis nozzle 29) to be retracted to the retreat position, and all the moving nozzles (i.e., the sulfuric acid- 60 and the cleaning liquid nozzle 65 are retracted from above the spin chuck 5 and the first and second guards 71, 72 descend to the lower position. As a result, the upper ends of the first and second guards 71 and 72 are all disposed below the holding position of the substrate W. 1) of the substrate transfer robot CR (see Fig. 1) holding the substrate W enters the inside of the processing chamber 4 in this state, the substrate W And is transferred to the spin chuck 5 in a state in which its surface (resist-formed surface) faces upward. Thereafter, the substrate W is held on the spin chuck 5 (substrate holding step).

Thereafter, the control device 3 starts the rotation of the substrate W by the spin motor 22. The substrate W is raised to a predetermined liquid processing speed (within a range of 1 to 500 rpm, for example, about 100 rpm) and is maintained at the liquid processing speed. The control device 3 controls the guard elevating and lowering unit 73 to raise the first and second guards 71 and 72 to the upper position and to move the first guard 71 to the position Facing the peripheral edge.

When the rotational speed of the substrate W reaches the liquid processing speed, an erasing step (step S2 in Fig. 4) for discharging the substrate W by supplying carbonic acid water to the upper surface of the substrate W is performed. Specifically, the control device 3 opens the second water valve 57. [ 5A, carbonated water is discharged from the second discharge port 10 of the second nozzle 11 toward the center of the upper surface of the substrate W. As a result, The carbonated water discharged from the second nozzle 11 is mixed with the central portion of the upper surface of the substrate W and is subjected to the centrifugal force by the rotation of the substrate W to be placed on the upper surface of the substrate W, It flows toward.

In this embodiment, the discharging step S2 is realized not only by discharging carbonated water from the second nozzle 11, but also by discharging carbonated water from the first discharging opening 8 of the first nozzle 9 . That is, the discharge step S2 includes a first water replacement step (T1) for replacing the inside of the organic solvent pipe 34 with carbonated water. Specifically, the control device 3 opens the second organic solvent valve 36 and closes the first organic solvent valve 35 and the suction valve 51 in synchronization with the start of the electricity removing step S2 , And opens the first water valve (46). Thus, carbonated water from the first water pipe 39 is supplied to the organic solvent downstream portion 40. When the droplet of the IPA used in the previous resist stripping treatment adheres to the inner wall of the organic solvent downstream portion 40, the droplet of the IPA is replaced by the carbonated water. The carbonated water supplied to the organic solvent downstream side portion 40 is discharged from the first nozzle 9 and is adhered to the center portion of the upper surface of the substrate W. The carbonated water is supplied to the downstream side And flows on the upper surface toward the periphery of the substrate W. Also, in the case where the IPA atmosphere used in the previous resist stripping treatment is mixed in the pipe of the organic solvent downstream side portion 40, it is also removed by the carbonated water.

The carbonated water supplied to the upper surface of the substrate W is scattered toward the side of the substrate W from the periphery of the substrate W and is received by the inner wall of the first guard 71. [ The carbonated water flowing down the inner wall of the first guard 71 is collected in the first drainage groove 80 and then guided to the exhaust liquid pipe 81. In the elimination step S2, the drain valve 85 for the water branch pipe 84 is opened and the drain valve 85 for the sulfuric acid-containing liquid branch pipe 82 and the branch pipe 83 for the cleaning chemical liquid, The distribution pipe for the liquid passing through the exhaust liquid pipe 81 is set in the branch pipe for water 84 by closing the drain valve 81 for drain. Therefore, in the elimination step S2, the carbonated water led to the exhaust liquid pipe 81 passes through the water branch pipe 84 and is led to a treatment device (not shown) for draining the carbonated water. When the droplet of the IPA used in the previous resist removing process is attached to the inner wall of the first guard 71 and the wall of the first drainage groove 80 and the exhaust liquid pipe 81, . ≪ / RTI >

A carbonic acid water film is formed on the upper surface of the substrate W by the supply of the carbonic acid water to the upper surface of the substrate W. A liquid film of carbonated water contacts the upper surface of the substrate W, whereby the substrate W held by the spin chuck 5 is discharged. In this embodiment, since the discharging step (S2) includes the first water replacing step (T1), as compared with the case where the first water replacing step (T1) is carried out at a timing different from the discharging step (S2) The processing time of the entire removal processing can be shortened.

5B, the control device 3 closes the first water valve 46 while keeping the second water valve 57 in the open state, The discharge of the carbonated water from the first nozzle 9 is stopped while the discharge of the carbonated water from the second nozzle 11 is maintained.

After the discharge of the carbonic acid water from the first nozzle 9 is stopped, the first water suction step T2 (first suction step) for sucking the carbonic acid water in the organic solvent pipe 34 is executed. The first water sucking step T2 sucks carbonated water existing in the organic solvent pipe 34 after the first water replacement step T1 by the suction unit 55. [

Specifically, the control device 3 opens the second organic solvent valve 36 and the first organic solvent valve 35 and the first water valve 46 after the completion of the first water replacement step (T1) The suction valve 51 is opened. As a result, the interior of the downstream portion 40 of the organic solvent and the downstream portion 50 of the water are exhausted and are present in the organic solvent downstream portion 40 and the water downstream portion 50 as shown in Fig. Is sucked into the suction pipe 49 (suction). The suction of the carbonated water is performed until the front end face of the carbonated water retreats to a predetermined standby position (for example, set in the suction pipe 49 or the water downstream portion 50) in the pipe. When the front end face of the carbonated water retreats to the standby position, the control device 3 closes the suction valve 51. Thereby, the first water replacement step (T1) ends.

The first water sucking step T2 is performed after the completion of the first water substitution step T1 so that there is no carbonated water in the organic solvent pipe 34 after the first water sucking step T2 is executed . Thus, the drop of the carbonated water from the first nozzle 9 after the completion of the first water replacement step (T1) can be suppressed or prevented.

When a predetermined time has elapsed from the start of the discharge of the carbonic acid water, the control device 3 closes the first water valve 46 to stop the discharge of the carbonic acid water from the second nozzle 11. Thereby, the discharging step S2 is completed.

In this embodiment, the first water sucking step T2 and the part of the discharging step S2 (discharging the carbonic acid water from the second nozzle 9) are performed in parallel, so that the first water sucking step T2 Can be shortened as compared with the case where the resist removal process is performed separately after the end of the erasing process (S2).

Subsequently, the control device 3 performs a sulfuric acid-containing liquid process (a second process step, step S3 in FIG. 4) for supplying the high-temperature SPM to the upper surface of the substrate W. In the sulfuric acid-containing liquid process S3, in order to peel off the resist from the surface of the substrate W, the controller 3 controls the high-temperature SPM from the sulfuric acid-containing liquid nozzle 60, .

Specifically, in the sulfuric acid-containing liquid process (S3), the controller 3 controls the first nozzle moving unit 63 to move the sulfuric acid-containing liquid nozzle 60 from the retreat position to the center position. Accordingly, the sulfuric acid-containing liquid nozzle 60 is disposed above the central portion of the substrate W. Thereafter, the control device 3 opens the sulfuric acid-containing liquid valve 62. Accordingly, the SPM at a high temperature (for example, about 170 ° C to about 200 ° C) is supplied from the sulfuric acid-containing liquid pipe 61 to the sulfuric acid-containing liquid nozzle 60, Of SPM is discharged. The high temperature SPM discharged from the sulfuric acid containing liquid nozzle 60 flows into the central portion of the upper surface of the substrate W and flows outward along the upper surface of the substrate W under the centrifugal force due to the rotation of the substrate W . Thus, as shown in Fig. 5C, the entire upper surface of the substrate W is covered with the liquid film of the SPM. The resist is peeled from the surface of the substrate W by the high temperature SPM and is removed from the surface of the substrate W. [

The SPM supplied to the upper surface of the substrate W is scattered toward the side of the substrate W from the peripheral edge of the substrate W and is received by the inner wall of the first guard 71. [ The SPM flowing down the inner wall of the first guard 71 is collected in the first drainage groove 80 and then guided to the exhaust liquid pipe 81. In the sulfuric acid-containing liquid process (S3), the liquid separation valve 85 for the sulfuric acid-containing liquid branch pipe 82 is opened and the liquid separation valve 85 for the cleaning liquid branch pipe 83 and the branch pipe for water 84 is closed to set the flow path of the liquid passing through the exhaust liquid pipe 81 to the branch pipe 82 for sulfuric acid-containing liquid. Therefore, in the elimination step S2, the SPM induced in the exhaust liquid pipe 81 passes through the sulfuric acid-containing liquid branch pipe 82 and is discharged to a treatment device (not shown) for draining the sulfuric acid- . Therefore, after the sulfuric acid-containing liquid process (S3), SPM droplets are attached to the inner wall of the first guard 71, the first drainage groove 80, and the pipe wall of the exhaust liquid pipe 81.

In the sulfuric acid-containing liquid process (S3), a large amount of SPM mist is generated around the upper surface of the substrate (W) by supplying the high-temperature SPM to the substrate (W). In the sulfuric acid-containing liquid process S3, the blocking plate 26 and the central axis nozzle 29 are moved from the upper surface of the spin base 24 to the retreating position (for example, the substrate opposing surface 6 of the blocking plate 26) The SPM used in the sulfuric acid-containing liquid process (S3) is at a very high temperature (for example, about 170 DEG C to about 200 DEG C) A large amount of mist of the SPM is generated in the step S3 so that the mist of the SPM enters the interior of the organic solvent pipe 34 from the first discharge port 8 and flows into the organic solvent pipe 34 Deep).

In this case, if the IPA used in the previous resist removal process remains in the organic solvent pipe 34 (including the attachment of the IPA droplet to the inside of the organic solvent pipe 34), the sulfuric acid- There is a fear that the mist of the SPM which has entered the organic solvent pipe 34 in the step S3 is in contact with the IPA in the organic solvent pipe 34. [ Particles may be generated when the mist of the SPM comes into contact with the IPA in the organic solvent pipe 34, and the inside of the organic solvent pipe 34 may be a particle generation source.

However, in this embodiment, since the first water replacement step (T1) is performed before the sulfuric acid containing solution step (S3), at the start of the sulfuric acid containing solution step (S3), the inside of the organic solvent pipe IPA is not remaining. Therefore, even if the mist of the SPM enters the organic solvent pipe 34 in the sulfuric acid-containing solution process (S3), the organic solvent pipe 34 does not contact the IPA inside the organic solvent pipe 34. Therefore, it is possible to prevent contact between the IPA and the SPM in the sulfuric acid-containing liquid process (S3), thereby preventing or preventing the inside of the organic solvent pipe 34 from becoming a particle generation source.

In the sulfuric acid-containing liquid process (S3), when the predetermined period has elapsed from the start of discharge of the high-temperature SPM, the sulfuric acid-containing liquid process (S3) ends. Specifically, the control device 3 closes the sulfuric acid-containing liquid valve 62, stops the discharge of the high-temperature SPM from the sulfuric acid-containing liquid nozzle 60, To thereby return the sulfuric acid-containing liquid nozzle 60 to the retreat position.

Subsequently, a first rinsing step (step S4 in Fig. 4) for supplying carbonic acid water as a rinsing liquid to the upper surface of the substrate W is carried out. Specifically, the control device 3 opens the second water valve 57. [ 5D, carbonated water is discharged from the second discharge port 10 of the second nozzle 11 toward the center of the upper surface of the substrate W. As a result, The carbonated water discharged from the second nozzle 11 is mixed with the central portion of the upper surface of the substrate W and is subjected to the centrifugal force by the rotation of the substrate W to be placed on the upper surface of the substrate W, It flows toward.

In this embodiment, the first rinsing step (S4) is not only the discharge of the carbonated water from the second nozzle 11, but also the discharge of the carbonated water from the first discharge port 8 of the first nozzle 9 . In short, the first rinsing step S4 includes a second water replacement step (T3) for replacing the inside of the organic solvent pipe 34 with carbonated water in parallel with the discharge of the carbonated water from the second nozzle 11 . Concretely, the control device 3 opens the second organic solvent valve 36 and the first organic solvent valve 35 and the suction valve 51 in synchronization with the start of the first rinsing step (S4) The first water valve 46 is opened. The carbonic acid water from the first water pipe 39 is supplied to the organic solvent downstream side portion 40 and the droplet of the SPM attached to the inner wall of the organic solvent downstream side portion 40 is replaced by the carbonated water . The carbonated water supplied to the organic solvent downstream side portion 40 is discharged from the first nozzle 9 and is adhered to the center portion of the upper surface of the substrate W. The carbonated water is supplied to the downstream side And flows on the upper surface toward the periphery of the substrate W.

The carbonated water supplied to the upper surface of the substrate W is scattered toward the side of the substrate W from the periphery of the substrate W and is received by the inner wall of the first guard 71. [ The carbonated water flowing down the inner wall of the first guard 71 is collected in the first drainage groove 80 and then guided to the exhaust liquid pipe 81. In the first rinsing step (S4), the drain branching valve 85 for the water branch pipe 84 is opened and the drainage branch valve 85 for the sulfuric acid-containing liquid branch pipe 82 and the branch pipe for the cleaning chemical liquid 83) is closed so that the flow path of the liquid passing through the exhaust liquid pipe 81 is set in the branch pipe 84 for the water. Therefore, the carbonated water led to the exhaust liquid pipe 81 passes through the water branch pipe 84 and is led to a treatment device (not shown) for draining the water. When the SPM droplets used in the sulfuric acid-containing liquid process (S3) are attached to the inner wall of the first guard 71, the first drainage groove 80, and the pipe wall of the exhaust liquid pipe 81, The enemy is washed away with carbonated water.

The SPM on the substrate W flows out and flows around the substrate W by the carbonated water supplied to the upper surface of the substrate W and the liquid film of the SPM on the substrate W is discharged onto the substrate W, And is replaced with a liquid film of carbonated water covering the entire upper surface. That is, the SPM is washed away from the upper surface of the substrate W by the carbonic acid water as the rinsing liquid. The control device 3 closes the first water valve 46 and the second water valve 57 so that the first nozzle 9 and the second nozzle 11 to stop the discharge of the carbonic acid water. Thereby, the first rinsing step is finished.

In this embodiment, since the first rinsing step (S4) includes the second water replacement step (T3), the first water replacement step (T1) is performed at a timing different from the first rinsing step (S4) The processing time of the entire resist removal process can be shortened.

It is not necessary to synchronize the discharge stop of the carbonated water from the first nozzle 9 and the discharge stop of the carbonated water from the second nozzle 11 in the first rinse process S4, May be performed before the discharge of the carbonic acid water from the second nozzle 11 is stopped.

After stopping the discharge of the carbonated water from the first nozzle 9 and the second nozzle 11, the control device 3 performs the cleaning chemical solution process (first process step in which SC1 is supplied to the upper surface of the substrate W Step S5 of FIG. In order to remove resist residues present on the surface of the substrate W from the surface of the substrate W after the sulfuric acid-containing solution process (S3) in the cleaning chemical solution process (S5), the control device (3) (SC1) from the substrate (65) to the upper surface of the substrate (W).

Specifically, in the cleaning chemical liquid process S5, the control device 3 moves the cleaning liquid nozzle 65 from the retreat position to the processing position by controlling the second nozzle moving unit 68. [ Thereafter, the control device 3 opens the cleaning liquid valve 67. 5E, SC1 is supplied to the cleaning solution nozzle 65 from the cleaning solution piping 66, and SC1 is ejected from the ejection port of the cleaning solution nozzle 65. As shown in Fig. The control device 3 controls the second nozzle moving unit 68 in parallel with the discharge of the SC1 from the cleaning solution nozzle 65 so as to move the cleaning solution nozzle 65 in the center position and the peripheral edge position (Half scan). This makes it possible to reciprocate the SC1 molten bonding position from the cleaning solution nozzle 65 between the central portion of the upper surface of the substrate W and the upper surface peripheral portion of the substrate W. As a result, , The whole area of the upper surface of the substrate W can be scanned. SC1 is supplied to the upper surface of the substrate W so that the resist residues can be removed from the surface of the substrate W. [

The SC1 supplied to the upper surface of the substrate W is scattered toward the side of the substrate W from the peripheral edge of the substrate W and is received by the inner wall of the first guard 71. [ SC1 flowing down on the inner wall of the first guard 71 is collected in the first drainage groove 80 and then guided to the exhaust liquid pipe 81. [ In the cleaning chemical liquid process S5, the liquid separation valve 85 for the cleaning chemical liquid branch pipe 83 is opened and the liquid separation valve 85 for the sulfuric acid-containing liquid branch pipe 82 and the branch pipe 84 for water Is closed in the branch piping 83 for the cleaning chemical liquid through the exhaust liquid piping 81 by closing the drain fluid branching valve 85 for the cleaning liquid. Therefore, SC1 induced in the exhaust liquid pipe 81 is led to a treatment device (not shown) for draining the cleaning solution through the branch pipe 83 for the cleaning chemical solution.

In parallel with the washing chemical solution step S5, a second water suction step T4 (first suction step) for sucking carbonated water in the organic solvent pipe 34 is carried out. The second water sucking step T4 sucks carbonated water existing in the organic solvent pipe 34 after the organic solvent step S7 by the suction unit 55. [

Specifically, after the completion of the second water replacement step (T3), the controller 3 opens the second organic solvent valve 36 and opens the first organic solvent valve 35 and the first water valve 46, The suction valve 51 is opened. Thus, the interior of the downstream portion 40 of the organic solvent and the downstream portion 50 of the water are exhausted and are present in the organic solvent downstream portion 40 and the water downstream portion 50 as shown in FIG. 5E Is sucked into the suction pipe 49 (suction). The suction of the carbonated water is performed until the front end face of the carbonated water retreats to a predetermined standby position (for example, set in the suction pipe 49 or the water downstream portion 50) in the pipe. When the front end face of the carbonated water retreats to the standby position, the control device 3 closes the suction valve 51. Thus, the second water sucking step (T4) ends.

The second water sucking step T4 is performed after the end of the second water replacement step T3 so that there is no carbonated water inside the organic solvent pipe 34 after the second water suction step T4 . Accordingly, the drop of the carbonic acid water from the first nozzle 9 after the completion of the second water replacement step (T3) can be suppressed or prevented.

In this embodiment, the second water suction step (T4) is executed in parallel with the cleaning chemical solution step (S5), so that the second water suction step (T4) is performed at a timing different from the cleaning chemical solution step (S5) It is possible to shorten the processing time of the entire resist removing process.

When the predetermined period has elapsed from the start of the discharge of SC1, the cleaning chemical solution process (S5) ends. Specifically, the control device 3 closes the cleaning liquid valve 67, stops the discharge of the SC1 from the cleaning liquid nozzle 65, and thereafter controls the second nozzle moving unit 68, The cleaning solution nozzle 65 is retracted to the retreat position.

Subsequently, a second rinsing step (step S6 in Fig. 4) of supplying carbonic acid water as a rinsing liquid to the upper surface of the substrate W is carried out. Specifically, the control device 3 opens the second water valve 57. [ 5F, carbonated water is discharged from the second discharge port 10 of the second nozzle 11 toward the center of the upper surface of the substrate W. As a result, The carbonated water discharged from the second nozzle 11 is mixed with the central portion of the upper surface of the substrate W and is subjected to the centrifugal force by the rotation of the substrate W to be placed on the upper surface of the substrate W, It flows toward.

The carbonated water supplied to the upper surface of the substrate W is scattered toward the side of the substrate W from the periphery of the substrate W and is received by the inner wall of the first guard 71. [ The carbonated water flowing down the inner wall of the first guard 71 is collected in the first drainage groove 80 and then guided to the exhaust liquid pipe 81. In the second rinsing step (S6), the drain branching valve 85 for the water branch pipe 84 is opened and the drainage valve 85 for the sulfuric acid-containing liquid branch pipe 82 and the branch pipe for the cleaning chemical liquid 83) is closed so that the flow path of the liquid passing through the exhaust liquid pipe 81 is set in the branch pipe 84 for the water. Therefore, in the second rinsing step (S6), the carbonated water led to the exhaust liquid pipe 81 passes through the water branch pipe 84 and is led to a treatment device (not shown) for draining the water .

SC1 on the substrate W is pushed outward by the carbonic acid water supplied to the upper surface of the substrate W and is discharged to the periphery of the substrate W and the liquid film of SC1 on the substrate W is discharged to the outside of the substrate W And is replaced with a liquid film of carbonated water covering the entire upper surface. That is, SC1 is washed away from the upper surface of the substrate W by the carbonic acid water as the rinsing liquid. When a predetermined time has elapsed after the second water valve 57 is opened, the control device 3 closes the second water valve 57 to stop the discharge of the carbonated water from the second nozzle 11. Thereby, the second rinsing step (S6) ends.

Then, an organic solvent process (step S7 in Fig. 4) for supplying IPA as an organic solvent to the upper surface of the substrate W is performed. Specifically, the control apparatus 3 controls the blocking plate elevating unit 32 to arrange the blocking plate 26 at a close position. When the blocking plate 26 is in the close position, the blocking plate 26 blocks the upper surface of the substrate W from the space around it.

The control device 3 controls the guard elevating and lowering unit 73 to arrange the second guard 72 in the upper position in a state in which the first guard 71 is in the lower position and the second guard 72 ) To the peripheral edge of the substrate (W). Further, the control device 3 decelerates the rotation of the substrate W at a predetermined paddle speed. This paddle velocity means that the centrifugal force acting on the liquid on the upper surface of the substrate W is smaller than the surface tension acting between the rinsing liquid and the upper surface of the substrate W when the substrate W is rotated at the paddle speed, Or the speed at which the centrifugal force and the surface tension are almost antagonistic to each other.

The control device 3 opens the first organic solvent valve 35 while opening the second organic solvent valve 36 and closing the first water valve 46 and the suction valve 51. [ 5G, IPA from the organic solvent supply source is supplied to the second nozzle 11, and IPA is discharged from the second nozzle 11 to deposit on the upper surface of the substrate W. As shown in Fig.

The mist of the SPM that has entered the organic solvent pipe 34 in the sulfuric acid-containing liquid process (S3) is liquefied by condensation to form the SPM droplet. The IPA supplied to the organic solvent pipe 34 in the organic solvent process S7 is supplied to the organic solvent pipe (not shown) in the organic solvent pipe (S7) if the SPM droplet exists in the organic solvent pipe 34 before the organic solvent process 34 may contact the SPM. Particles may be generated when IPA contacts the droplet of the SPM in the organic solvent pipe 34, and the inside of the organic solvent pipe 34 may be a particle generation source.

However, in this embodiment, since the second water replacement step (T3) is performed prior to the organic solvent step (S7), at the start of the organic solvent step (S7), the organic solvent piping (34) Of the liquid remains. Therefore, even if IPA is supplied to the organic solvent pipe 34 in the organic solvent process (S7), the organic solvent pipe 34 does not come into contact with the SPM inside the organic solvent pipe 34. [ Therefore, generation of particles accompanied by contact between the IPA and the SPM can be effectively suppressed or prevented, and the inside of the organic solvent pipe 34 can be prevented or prevented from becoming a particle generation source.

In the organic solvent step (S7), the carbonated water contained in the liquid film on the upper surface of the substrate (W) is successively replaced with IPA by the discharge of IPA from the first nozzle (9). As a result, the liquid film of IPA covering the entire upper surface of the substrate W is held on the upper surface of the substrate W in a paddle shape. The supply of IPA to the upper surface of the substrate W is continued even after the liquid film on the entire upper surface of the substrate W is almost replaced with the liquid film of IPA. Therefore, the IPA is discharged from the peripheral portion of the substrate W.

The IPA discharged from the peripheral portion of the substrate W is received by the inner wall of the second guard 72. [ The IPA flowing down on the inner wall of the second guard 72 is collected in the second drainage groove 86 and then guided to the exhaust pipe 87. Therefore, after the organic solvent step (S7), droplets of IPA are adhered to the inner wall of the second guard 72, the second drainage groove 86, and the pipe wall of the exhaust pipe 87.

When the predetermined period has elapsed from the start of the discharge of the IPA, the controller 3 closes the first organic solvent valve 35 and stops the discharge of the IPA from the first nozzle 9. Thereby, the organic solvent step (S7) is finished.

Then, a spin drying process (step S8 in Fig. 4) for drying the substrate W is performed. Specifically, the control apparatus 3 controls the blocking plate elevating unit 32 to arrange the blocking plate 26 at a close position. 5 (h), the control device 3 controls the spin motor 22 to rotate in the respective steps from the sulfuric acid-containing solution step (S3) to the organic solvent step (S7) The substrate W is accelerated to a drying rotational speed (for example, several thousand rpm) larger than the speed, and the substrate W is rotated at the drying rotational speed. As a result, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken around the substrate W. [ In this way, liquid is removed from the substrate W, and the substrate W is dried. The control device 3 controls the blocking plate rotating unit 31 to rotate the blocking plate 26 at a high speed in the rotating direction of the substrate W.

In parallel with the spin-drying step (S8), an organic solvent sucking step T5 (second sucking step) for sucking the organic solvent in the organic solvent pipe 34 is carried out. The organic solvent sucking step T5 sucks the organic solvent existing in the organic solvent pipe 34 after the organic solvent step S7 by the suction unit 55. [

Specifically, after the end of the organic solvent step (S7), the controller 3 opens the second organic solvent valve 36 and closes the first organic solvent valve 35 and the first water valve 46 , The suction valve 51 is opened. Thus, the interior of the downstream portion 40 of the organic solvent and the downstream portion 50 of the water are exhausted and are present in the organic solvent downstream portion 40 and the water downstream portion 50 as shown in Fig. Is drawn into the suction pipe 49 (suction). The suction of the IPA is carried out until the front end face of the IPA retreats to a predetermined standby position in the pipe (for example, set in the suction pipe 49 or the water downstream portion 50). When the front end face of the IPA is retracted to the standby position, the control device 3 closes the suction valve 51.

When a predetermined time has elapsed from the acceleration of the substrate W, the control device 3 controls the spin motor 22 to stop the rotation of the substrate W by the spin chuck 5, (31) to stop the rotation of the blocking plate (26).

Thereafter, the substrate W is taken out of the processing chamber 4 (step S9 in Fig. 4). Specifically, the control device 3 causes the shield plate 26 to be placed at the retreat position, the second guard 72 to the lower position, and the first and second guards 71, (W). Thereafter, the control device 3 allows the hand H of the substrate carrying robot CR to enter the inside of the processing chamber 4. [ The controller 3 holds the substrate W on the spin chuck 5 on the hand of the substrate carrying robot CR and holds the hand H of the substrate carrying robot CR in the processing chamber 4 . Thereby, the substrate W from which the resist has been removed from the surface is taken out of the processing chamber 4. [

4, the organic solvent pre-dispensing (step S10 in Fig. 4) for replacing the organic solvent pipe 34 with a new IPA is executed before the organic solvent suction step (T5) is started . Prior to the start of the organic solvent sucking step (T5), the front end surface of the IPA of the organic solvent pipe (34) is located in the organic solvent upstream portion (41). At this time, the IPA in the organic solvent pipe 34 (in the organic solvent upstream portion 41) may change with time (temperature change or component change).

The controller 3 controls the first organic solvent valve 35 and the suction valve 51 while closing the second organic solvent valve 36 and the first water valve 46. When the organic solvent pre- IPA from the organic solvent supply source passes through the organic solvent upstream portion 41 and the water downstream portion 50 and is drawn into the suction pipe 49 (suction). As a result, the IPA which is present in the organic solvent upstream portion 41, which has changed over time, is replaced with fresh IPA. The control device 3 closes the first organic solvent valve 35 and the suction valve 51 when a predetermined period has elapsed from the individuality of the first organic solvent valve 35. [

Fig. 6 is a schematic diagram for explaining the monitoring situation by the first liquid detection sensor 43 and the second liquid detection sensor 45 in the main steps of the first substrate processing example.

6, in the organic solvent step (S7) (during organic solvent discharge), the control device 3 is provided with a first liquid detection sensor 43 And the detection output of the second liquid detection sensor 45 disposed on the downstream side of the second organic solvent valve 36 are not referred to. In other words, in the organic solvent step (S7), the control device 3 ignores the presence or absence of the liquid in both the first detection position 42 and the second detection position 44. [

6, in the organic solvent sucking step (T5), the control device 3 detects the detection output of the first liquid detection sensor 43 disposed on the upstream side of the second organic solvent valve 36, And the detection output of the second liquid detection sensor 45 disposed on the downstream side of the second organic solvent valve 36 are referred to. In other words, the control device 3 monitors the presence or absence of the liquid in both of the first detection position 42 and the second detection position 44. Based on the detection outputs from both the first liquid detection sensor 43 and the second liquid detection sensor 45 in the organic solvent sucking step T5, the first detection position 42 and the second detection position The control device 3 detects that the suction of the IPA is completed. In this case, the control device 3 detects that the suction of the IPA is completed.

In addition, the control device 3 may perform the other suction process (for example, the first water suction process (T2) or the second water suction process (T4) as well as the organic solvent suction process (T5) ), The presence or absence of the liquid in both of the first detection position 42 and the second detection position 44 is monitored.

In the organic solvent pre-dispensing step (S10), the controller 3 refers to only the detection output of the second liquid detection sensor 45 disposed on the upstream side of the second organic solvent valve 36, 2 detection output of the first liquid detection sensor 43 disposed on the downstream side of the organic solvent valve 36 is not referred to. In other words, the control device 3 monitors the presence or absence of the liquid at the second detection position 44, but ignores the presence or absence of the liquid at the first detection position 42. [ When the presence of liquid (that is, IPA) at the second detection position 44 is detected by the second liquid detection sensor 45 even though the second organic solvent valve 36 is controlled to be in the closed state , The control device 3 can detect the outflow error because the organic solvent (i.e., IPA) is leaking from the second organic solvent valve 36 as shown in Fig.

In addition, in the first substrate processing example, except for the respective steps specifically mentioned, the control device 3 detects the detection of the second liquid detection sensor 45 disposed on the downstream side of the second organic solvent valve 36 And the detection output of the first liquid detection sensor 43 disposed on the upstream side of the second organic solvent valve 36 is not referred to. In other words, the control device 3 monitors the presence or absence of the liquid at the second detection position 44, but ignores the presence or absence of the liquid at the first detection position 42. [ When the presence of liquid (that is, IPA) at the second detection position 44 is detected by the second liquid detection sensor 45 even though the second organic solvent valve 36 is controlled to be in the closed state , The control device 3 can detect the outflow error because the organic solvent (i.e., IPA) is leaking from the second organic solvent valve 36 as shown in Fig.

7 is a diagram for explaining a hard interlock in the first substrate processing example.

This interlock process is executed at the start of each process in the process of performing a series of substrate processes according to the recipe held in the memory of the control device 3. [

At the start of the sulfuric acid-containing liquid process (S3), (3) whether the detection output of the guard-down position sensor 94 is on, that is, whether the first guard 71 is disposed at a lower position, Whether the detection output of the second liquid detection sensor 43 or 45 is off, that is, whether the front end face of the IPA is retracted to the suction pipe 49 or the water downstream portion 50, and (6) 37 are turned on, that is, whether the first organic solvent valve 35 is in the closed state. When all of the conditions (3), (5) and (6) are satisfied, the control device 3 allows the opening operation of the sulfuric acid-containing liquid valve 62. In short, when any one of the conditions (3), (5) and (6) does not satisfy the condition, the control device 3 prohibits the opening operation of the sulfuric acid- Such a hard interlock can reliably prevent the IPA from contacting with the SPM in the processing chamber 4 at the start of the discharge of the IPA from the first nozzle 9. [

At the start of the organic solvent process (S7), (1) whether the detection output of the blocking plate proximity position sensor 33 is on, that is, whether the blocking plate 26 is disposed at a nearby position, (2) Whether or not the detection output of the sensor 64 is on, that is, whether the sulfuric acid-containing liquid nozzle 60 is in the retreat position, (4) whether the detection output of the guard position sensor 93 is on or the first guard 71 And (8) whether the detection output of the first valve opening sensor 21 is on, that is, whether the exhaust valve 101 for opening and closing the exhaust pipe 100 is in the open state, respectively. When all of the conditions (1), (2), (4) and (8) are satisfied, the control device 3 permits the opening operation of the first organic solvent valve 35. In other words, when any one of the conditions (1), (2), (4) and (8) does not satisfy the condition, the control device 3 prohibits the opening operation of the first organic solvent valve 35 do. Such a hard interlock can reliably prevent the SPM from contacting the IPA in the processing chamber 4 at the start of the discharge of the SPM from the sulfuric acid-containing liquid nozzle 60.

At the start of the elimination step (S2), at the start of the sulfuric acid-containing liquid step (S3), at the start of the first rinsing step (S4), at the start of the cleaning solution step (S5) (7) When the detection output of the second valve closing sensor 95 corresponding to the process liquid other than the process liquid to be discharged is all turned on, that is, the drainage corresponding to the process liquid other than the process liquid to be discharged It is checked whether the branch valve 85 is closed.

Specifically, in the elimination step (S2), the first rinsing step (S4) and the second rinsing step (S6), the second valve closing operation corresponding to the drainage branch valve 85 for the sulfuric acid- The sensor 95 and the detection output of the second valve closing sensor 95 corresponding to the drainage branch valve 85 for the cleaning chemical liquid branch pipe 83 are respectively irradiated. In the sulfuric acid-containing liquid process (S3), the second valve closing sensor 95 corresponding to the liquid purge branch valve 85 for the cleaning liquid branch pipe 83 and the liquid purge branch valve The detection output of the second valve closing sensor 95 corresponding to the second valve closing sensor 85 is respectively irradiated. A second valve closing sensor 95 corresponding to the drainage branch valve 85 for the sulfuric acid-containing liquid branch pipe 82 and a drain valve 85 for the water branch pipe 84 are provided in the cleaning chemical liquid process S5. And the detection output of the second valve closing sensor 95 corresponding to the second valve closing sensor 95 are respectively examined.

When the condition (7) is satisfied, the control device 3 determines whether or not the discharge opening and closing valve corresponding to the discharge target liquid (that is, the first water The valve 46, the sulfuric acid-containing liquid valve 62, and the cleaning liquid valve 67). In short, when the condition (7) is not satisfied, the control device 3 prohibits the opening operation of the valves 46, 62 and 67.

Thus, according to this embodiment, the first water replacement step (T1) is performed prior to the sulfuric acid-containing solution step (S3). If the IPA used in the previous resist removal treatment remains in the organic solvent pipe 34 before the sulfuric acid containing solution process S3 starts, the organic solvent pipe 34 is removed in the sulfuric acid- There is a possibility that the mist of the SPM entering into the organic solvent pipe 34 comes into contact with the IPA inside the organic solvent pipe 34. [ However, by replacing the inside of the organic solvent pipe 34 with carbonated water prior to the sulfuric acid-containing solution process S3, IPA remains in the organic solvent pipe 34 at the start of the sulfuric acid-containing solution process S3 It is not. Therefore, even if the mist of the SPM enters the organic solvent pipe 34 in the sulfuric acid-containing solution process (S3), the organic solvent pipe 34 does not contact the IPA inside the organic solvent pipe 34. Therefore, it is possible to prevent contact between the IPA and the SPM in the sulfuric acid-containing liquid process (S3), thereby preventing or preventing the inside of the organic solvent pipe 34 from becoming a particle generation source.

After the sulfuric acid-containing liquid process (S3), the second water replacement process (T3) is performed before the organic solvent process (S7). When the droplet of the SPM that has entered the organic solvent pipe 34 in the sulfuric acid-containing liquid process (S3) and liquefied by condensation is present in the organic solvent pipe 34 before the start of the organic solvent process (S7) , IPA supplied to the organic solvent pipe (34) may come into contact with the SPM in the organic solvent pipe (34) in the organic solvent process (S7). However, by replacing the inside of the organic solvent pipe 34 with the carbonic acid water prior to the organic solvent step (S7), the amount of the SPM remains in the organic solvent pipe 34 at the start of the organic solvent step (S7) It is not. Therefore, even if IPA is supplied to the organic solvent pipe 34 in the organic solvent process (S7), the organic solvent pipe 34 does not come into contact with the SPM inside the organic solvent pipe 34. [ Therefore, generation of particles accompanied by contact between the IPA and the SPM can be effectively suppressed or prevented, and the inside of the organic solvent pipe 34 can be prevented or prevented from becoming a particle generation source.

Fig. 8 is a schematic diagram for explaining an example of the second substrate processing by the processing unit 2. Fig. Fig. 9 is a schematic diagram for explaining an example of the third substrate processing by the processing unit 2. Fig. The second and third substrate processing examples are different from the first substrate processing example shown in Fig. 4 and the like in that IPA is supplied to the first nozzle 9 prior to the end of the second rinsing step (S6). In other respects, the second and third substrate processing examples are different from the first substrate processing example.

In the second substrate processing example shown in Fig. 8, the controller 3 controls the second organic solvent valve 36 during execution of the second rinsing step (S6) (in parallel with the second rinsing step (S6) The first organic solvent valve 35 is opened. As a result, IPA from the organic solvent supply is supplied toward the first nozzle 9. However, at the timing immediately before the IPA is discharged from the first discharge port 8, the control device 3 closes the second water valve 57. [ Thus, the IPA is not discharged from the first discharge port 8. That is, during the execution of the second rinsing step (S6), IPA is not discharged from the first discharge port (8), and the inside of the organic solvent downstream portion (40) and the inside of the nozzle piping of the first nozzle Is charged by IPA.

Thereafter, when the second rinsing step (S6) is finished and the timing of starting the organic solvent step (S7) is reached, the control device (3) opens the first organic solvent valve (35) The supply of IPA from the supply source to the first nozzle 9 is resumed and the IPA is discharged from the first discharge port 8. [

According to this second substrate processing example, IPA can be discharged from the first discharge port 8 immediately after the end of the second rinsing step (S6). That is, the organic solvent step (S7) can be started immediately after the end of the second rinsing step (S6). Thus, compared with the first substrate processing example, the processing time of the entire resist removal processing can be shortened.

In the third substrate processing example shown in Fig. 9, unlike the second substrate processing example shown in Fig. 8, the control device 3 performs the second rinsing step S6 (in parallel with the second rinsing step S6) ), And discharges IPA from the first discharge port (8).

Specifically, the control device 3 opens the first organic solvent valve 35 while opening the second organic solvent valve 36 during the execution of the second rinsing step S6. Thereby, IPA from the organic solvent supply source is supplied toward the first nozzle 9, and is discharged from the first discharge port 8. That is, the control device 3 starts the organic solvent process (S7) before the end of the second rinsing process (S6).

In the third substrate processing example, the discharge flow rate of the IPA from the first discharge port 8 is smaller than the discharge flow rate of the carbonic acid water from the second discharge port 10 (for example, about 1/10). Therefore, there is almost no adverse effect on the rinsing process on the substrate W. In the third substrate processing example, as in the second substrate processing example, there is no interval from the end of the second rinsing step (S6) to the start of the organic solvent step (S7). Therefore, , The processing time of the entire resist removal process can be shortened.

Although the embodiment of the present invention has been described above, the present invention may be embodied in another form.

For example, in the first and second water suction processes (T2, T4) of the first to third substrate processing examples, when the front end face of carbonated water retreats to the suction pipe 49 or the water downstream portion 50 It is also possible that the front end surface of the carbonated water after the aspiration is located inside the organic solvent pipe 34.

In the first to third substrate processing examples, the first water replacement step (T1) may be performed at a timing different from the discharge step (S2). The second water replacement step (T3) may be performed at a timing different from the first rinsing step (S4). The first water sucking step (T2) may be performed after the elimination step (S2). The second water suction step (T4) may be performed at a timing different from the cleaning chemical solution step (S5).

In the first to third substrate processing examples, after the first water replacement step (T1) and the sulfuric acid-containing solution step (S3) executed before the sulfuric acid-containing solution step (S3) The second water replacement step (T3) to be executed before the step (S7) is executed. However, the water replacement step may be performed at least once before and / or after the organic solvent step (S7) and / or before and / or after the sulfuric acid-containing solution step (S3) .

In the first to third substrate processing examples, the hydrogen peroxide solution (H ₂ O ₂ ) is supplied to the upper surface of the substrate W before the cleaning chemical solution process (S5) is executed or after the cleaning chemical solution process (S5) (Surface) of the hydrogen peroxide solution may be performed.

In the embodiment described above, SPM is exemplified as the sulfuric acid-containing liquid used as an example of the first chemical fluid, but sulfuric acid or SOM (sulfuric acid ozone) can be used in addition to the sulfuric acid-containing liquid.

In the above-described embodiment, as the processing cup, there is used a type in which the atmosphere and the processing liquid are subjected to gas-liquid separation using an external gas-liquid separator (gas-liquid separator 97) The case of using the processing cup 16 has been described. However, as the treatment cup, a treatment cup of a type capable of performing the gas-liquid separation of the atmosphere and the treatment liquid from the inside can be used.

This type of processing cup includes one or a plurality of cups arranged to surround the spin chuck 5 and a drain pipe connected to each of the cups. In the processing chamber 4 having this type of processing cup, an exhaust port is opened at the bottom of the side wall of the partition 18 or at the bottom of the partition 18, and the inside of the exhaust port is connected to the exhaust duct The atmosphere in the lower space of the processing chamber 4 is exhausted.

In the above-described embodiment, a common drainage groove (drainage groove 80) for drainage of a plurality of kinds of treatment liquids (sulfuric acid-containing liquid, cleaning solution and water) is formed and drainage from the drainage groove 80 (Treatment liquid) is switched between a plurality of drainage branch pipes 82 to 84 in accordance with the type of the drainage (treatment liquid).

However, in the treatment cup 16, drainage grooves may be formed in correspondence with each kind of treatment liquid in a one-to-one correspondence. That is, the drain groove for the sulfuric acid-containing liquid, the drain groove for the cleaning chemical solution, and the drain groove for the water may be separately formed. In this case, it is not necessary to switch the distribution paper of the drainage (treatment liquid) between the plurality of drainage branch pipes.

In the above-described embodiment, IPA is exemplified as an example of the organic solvent used as an example of the second chemical fluid. However, examples of the organic solvent include methanol, ethanol, HFE (hydrofluoroether), acetone and the like . The organic solvent may be not only a single component but also a liquid mixed with other components. For example, it may be a mixture of IPA and acetone, or a mixture of IPA and methanol.

In the embodiments described above, the combination of the sulfuric acid-containing liquid such as SPM and the organic solvent such as IPA is exemplified as a combination of chemical solutions accompanied by a risk of contact. In addition, a combination of aqua regia and sulfuric acid , A combination involving a risk of contact.

The present invention is also widely applied to a combination of producing a product (e.g., a salt) by contact, such as a combination of an acid and an alkali described above, that is, a combination of a medicine fluid not suitable for contact.

Although the above description has been made on the assumption that the first medicinal fluid (the fluid containing the medicinal component) is a liquid (i.e., the liquid containing the medicinal component), the first medicinal fluid is a gas (i.e., .

Further, although the second medicine fluid is described as a liquid, a gas may be employed as the second chemical fluid.

Although carbonic acid water is exemplified as water for replacing the interior of the chemical fluid piping (organic solvent piping 34), the water is not limited to carbonated water but may be deionized water (DIW), electrolytic ionized water, (For example, about 10 ppm to about 100 ppm) hydrochloric acid.

It is to be understood that the present invention is not limited to the specific embodiments thereof but is to be construed as limited only by the scope of the present invention, But is only limited by the scope of the appended claims.

This application corresponds to Japanese Patent Application No. 2016-104600 filed with the Japanese Patent Office on May 25, 2016, the entire disclosure of which is hereby incorporated by reference.

1: substrate processing apparatus
4: Processing chamber
5: spin chuck (substrate holding unit)
6: substrate facing surface
7: Opposite member
8: First outlet
9: First nozzle
11: Second nozzle
12: organic solvent supply unit (first medicine fluid supply unit)
13: rinse water supply unit (second water supply unit)
14: Sulfuric acid-containing liquid supply unit (second medicine fluid supply unit)
15: cleaning liquid supply unit
16: Processing cup
34: Organic solvent piping (chemical fluid piping)
35: First organic solvent valve
36: Second organic solvent valve
37: Valve close sensor
39: First water piping
40: part downstream of the organic solvent
43: first liquid detection sensor
45: second liquid detection sensor
46: First water valve
47: Substitution water supply unit (first water supply unit)
49: Aspiration piping
51: Suction valve
52: suction device
53: Vacuum generator
54: drive valve
55: suction unit
56: Second water piping
57: Second water valve
A1: Axis of rotation
A2: rotation axis line
W: substrate

Claims (21)

A processing chamber,
A substrate holding unit disposed in the processing chamber and holding a substrate;
A first nozzle having a discharge port for discharging a fluid toward a main surface of a substrate held by the substrate holding unit;
A first medicinal fluid supply unit connected to the first nozzle and having a medicinal fluid piping whose inside communicates with the discharge port and for supplying a first medicinal fluid to the first nozzle through the medicinal fluid piping,
A first water supply unit having a water pipe branch-connected to the medicine fluid pipe, for supplying water to the medicine fluid pipe through the water pipe,
A second medicinal fluid supply unit for supplying a second medicinal fluid of a kind different from that of the first medicinal fluid to the main surface of the substrate held by the substrate holding unit;
And a control device for controlling the first medicine fluid supply unit, the second medicine fluid supply unit, and the first water supply unit,
The control device includes:
A first process for discharging the first chemical fluid from the first nozzle toward the main surface of the substrate by supplying the first chemical fluid to the chemical fluid pipe and performing a process using the first chemical fluid on the substrate The process,
A second processing step of supplying the second chemical fluid to the main surface of the substrate to perform processing using the second chemical fluid on the substrate,
Water from the first water supply unit is supplied to the medicine fluid pipe before and / or after the execution of the first treatment process and / or before and / or after the execution of the second treatment process And a water replacement step of replacing the inside of the chemical fluid pipe with water. The method according to claim 1,
Further comprising an opposing member having a substrate facing surface opposite to a main surface of the substrate held by the substrate holding unit,
And the discharge port of the first nozzle is formed on the substrate facing surface. 3. The method according to claim 1 or 2,
Further comprising a suction unit for suctioning the interior of the medicinal fluid piping,
The control device further controls the suction unit,
Wherein the control device further performs a first suction process for sucking the inside of the chemical fluid pipe after the completion of the water replacement process. 3. The method according to claim 1 or 2,
The control device starts the first processing step after the end of the second processing step,
Wherein the control device executes the first water replacement step executed before the second processing step as the water replacement step. 3. The method according to claim 1 or 2,
The control device starts the first processing step after the end of the second processing step,
Wherein the control device executes the second water replacement step executed after the second processing step and before the first processing step as the water replacement step. 6. The method of claim 5,
Wherein the controller is configured to perform a first water supply step of supplying water to the main surface of the substrate before the first treatment step in order to wash the second chemical fluid from the main surface of the substrate after the second treatment step with water, Further execution of the process,
Wherein the control device executes the second water replacement step as the first water supply step. 3. The method according to claim 1 or 2,
A second nozzle for discharging the fluid toward the main surface of the substrate held by the substrate holding unit, the second nozzle being different from the first nozzle;
Further comprising a second water supply unit for supplying water to the second nozzle,
Wherein the control device further controls the second water supply unit,
Wherein the control device is configured to start the first processing step after the end of the second processing step and to supply water to the second nozzle after the second processing step and before the start of the first processing step A second water supply step of starting water discharge from the second nozzle toward the main surface of the substrate,
Wherein the control device starts the supply of the first chemical fluid to the chemical fluid pipe in the first process step prior to the end of the second water supply process. 3. The method according to claim 1 or 2,
Wherein the control device starts the first processing step before the end of the second water supply step. 3. The method according to claim 1 or 2,
Wherein the controller further performs a second suction process for sucking the inside of the chemical fluid pipe after the completion of the discharge of the first chemical fluid from the first nozzle in the one treatment process. 3. The method according to claim 1 or 2,
Wherein the cleaning liquid includes carbonated water. 3. The method according to claim 1 or 2,
Wherein the first chemical fluid comprises a sulfuric acid-containing liquid,
Wherein the second chemical fluid comprises an organic solvent. A substrate holding step of holding the substrate in the processing chamber,
The first chemical fluid is discharged from the first nozzle toward the main surface of the substrate by supplying the first chemical fluid to the first nozzle through a chemical fluid pipe connected to the first nozzle, A first processing step of performing a used process on the substrate,
A second processing step of supplying a second chemical fluid, which is a kind of fluid different from the first chemical fluid, to the main surface of the substrate and performing processing using the second chemical fluid on the substrate;
Through the water piping branch-connected to the chemical fluid pipe before and / or after the execution of the first process, and / or before and / or after the execution of the second process, And a water replacement step of supplying water to replace the inside of the chemical fluid pipe with water. 13. The method of claim 12,
Further comprising a first sucking step of sucking the interior of the medicament fluid piping after the end of the water displacement process. The method according to claim 12 or 13,
Wherein the first processing step includes a step of starting after the end of the second processing step,
Wherein the water replacement step includes a first water replacement step performed prior to the second processing step. The method according to claim 12 or 13,
Wherein the first processing step includes a step of starting after the end of the second processing step,
Wherein the water replacement step includes a second water replacement step performed after the second processing step and before the first processing step. 16. The method of claim 15,
Further comprising a first water supply step of supplying water to the main surface of the substrate prior to the first treatment step so as to wash the second chemical fluid from the main surface of the substrate after the second treatment step with water and,
Wherein the first water supply step includes the second water replacement step. The method according to claim 12 or 13,
Wherein the first processing step includes a step of starting after the end of the second processing step,
A second water discharge nozzle for discharging water from the second nozzle toward the main surface of the substrate by supplying water to the second nozzle which is a nozzle different from the first nozzle after the second processing step and before the first processing step; Further comprising a feed step,
Wherein the first treatment step starts to execute the supply of the first chemical fluid to the chemical fluid piping prior to the end of the second water supply step. The method according to claim 12 or 13,
And a second water supply step of supplying water from the second nozzle to the main surface of the substrate after the second treatment step,
And the first processing step is executed in parallel with the second water supply step. The method according to claim 12 or 13,
Further comprising a second suction step of sucking the inside of the chemical fluid pipe after completion of discharge of the first chemical fluid from the first nozzle in the one treatment process. The method according to claim 12 or 13,
Wherein the cleaning liquid contains carbonated water. The method according to claim 12 or 13,
Wherein the first chemical fluid comprises a sulfuric acid-containing liquid,
Wherein the second chemical fluid comprises an organic solvent.

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