JP6429314B2 - Substrate processing system - Google Patents

Description

  The present invention relates to a substrate processing system including a substrate processing apparatus and an exhaust gas switching device. Examples of substrates to be processed by the substrate processing apparatus include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical disks. Substrates, photomask substrates, ceramic substrates, solar cell substrates and the like are included.

In a manufacturing process of a semiconductor device or a liquid crystal display device, processing using a processing fluid such as a processing liquid or a processing gas is performed on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel. For such processing, a single-wafer type substrate processing apparatus that processes substrates one by one may be used.
A single wafer processing apparatus includes a substrate holding unit that holds and rotates a substrate in a processing chamber defined by partition walls, and a nozzle for supplying a processing fluid to the surface of the substrate held by the substrate holding unit. And. By supplying the processing fluid from the nozzle to the surface of the substrate, the atmosphere in the processing chamber contains the processing fluid. In order to exhaust the atmosphere containing the processing fluid, an exhaust port is formed in the lower region of the processing chamber.

For example, in Patent Document 1 below, a collective exhaust pipe and an individual exhaust pipe are connected to an exhaust hole (exhaust port) provided at the bottom of the processing cup. The exhaust hole is forcibly exhausted by an exhaust processing facility as an exhaust source connected to the downstream side of the individual exhaust pipe. As a result, the atmosphere in the processing cup is guided to the exhaust processing device through the exhaust pipe, and is processed by the exhaust processing device.
Moreover, in patent document 1, the exhaust gas switch is arrange | positioned between the substrate processing apparatus and several exhaust processing equipment. The exhaust gas switch has an exhaust introduction chamber into which exhaust gas passing through the collective exhaust pipe is introduced. Three individual exhaust pipes are connected to the exhaust introduction chamber. The exhaust destination in the exhaust introduction chamber is switched between three individual exhaust pipes according to the type of chemical used in the substrate processing apparatus.

  Patent Document 2 discloses a configuration in which a check valve is provided in an inner cylinder of a drain trap (water seal trap), and seal water is disposed below the check valve in the inner cylinder.

JP 2010-226043 A JP 2009-287329 A

  By the way, in the exhaust gas switching device described in Patent Document 1, since a plurality of different chemical liquid atmospheres circulate in the exhaust introduction chamber, a reaction occurs inside the exhaust introduction chamber due to contact between the plurality of chemical liquid atmospheres. There is a possibility that crystals of the reactant and / or droplets may adhere to the inner wall of the introduction chamber. Therefore, it is desirable to regularly clean the inner wall of the exhaust introduction chamber using a cleaning liquid. When such a washable configuration is adopted, in order to prevent the used cleaning liquid from staying inside the exhaust introduction chamber, a drain pipe is connected to the exhaust introduction chamber, and the used cleaning liquid is discharged. It is necessary to pull out (discharge) out of the machine through the liquid piping.

  On the other hand, in order to exhaust the atmosphere in the chamber (processing chamber), the inside of the exhaust introduction chamber is always kept at a negative pressure. Therefore, when the drainage pipe is connected to the exhaust introduction chamber that is under negative pressure, the outside air may flow back through the drainage pipe and the outside air may enter the inside of the exhaust introduction chamber. In order to prevent the backflow of outside air, the present inventor is considering providing a liquid sealing trap (utilizing the cleaning liquid as a sealing liquid) in the middle of the drainage pipe. In this case, it is desirable to suppress or prevent breakage of the liquid sealing trap (a phenomenon in which the sealing liquid in the drainage pipe decreases due to evaporation or the like and loses its function as a trap). When the liquid trap is broken, the outside air may flow backward and enter the exhaust introduction chamber.

As a countermeasure, it is conceivable to use a check valve as in Patent Document 2. The check valve is provided, for example, upstream of the sealing liquid (sealing water) of the drainage pipe. In this case, since the reverse movement of the liquid (cleaning liquid) in the drainage pipe can be blocked by the check valve, it is considered that the outside air can be prevented from entering the exhaust introduction chamber even if the liquid seal trap is broken. It is done.
However, it is not appropriate to provide a check valve in the drainage pipe. In other words, when a check valve is used, it is necessary to feed the liquid with a large force exceeding the cracking pressure of the check valve, but in the drainage pipe that drains the cleaning liquid from the negative pressure exhaust introduction chamber, Since such a large force cannot be applied to the cleaning liquid, the cleaning liquid cannot pass through the check valve, and as a result, the cleaning liquid may be prevented from being discharged from the drain pipe. Therefore, it is difficult to adopt a measure for providing a check valve in the drainage pipe.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing system that can suppress or prevent the breakage of a liquid seal trap, thereby preventing the entry of outside air into an exhaust introduction chamber.

  In order to achieve the above object, according to the first aspect of the present invention, there is provided a substrate processing apparatus having a chamber in which a plurality of types of processing fluids are used for processing a substrate, and exhaust from the chamber. A substrate processing system including an exhaust gas switching chamber for switching an exhaust outlet of the exhaust gas introducing chamber to a plurality of exhaust gas processing devices, and supplying a liquid from the inside of the exhaust gas introducing chamber. A drainage pipe for draining, a drainage pipe provided with a liquid-sealed trap filled with a liquid in the middle thereof, and a liquid supply for supplying the liquid into the exhaust introduction chamber A liquid level sensor for detecting the liquid level of the liquid seal in the liquid ring trap, and when the liquid level detected by the liquid level sensor is less than a predetermined level, liquid is supplied to the liquid ring trap. In order to supply the liquid supply part Control to and a controller for supplying a liquid to the interior of the exhaust introduction chamber, to provide a substrate processing system.

  According to this configuration, the sealing liquid amount sensor detects that the liquid amount of the sealing liquid in the liquid sealing trap is less than a predetermined amount. Based on the fact that the liquid amount of the sealing liquid is detected to be less than the predetermined amount, the liquid is supplied to the liquid sealing trap, whereby the sealing liquid in the liquid sealing trap is replenished. Therefore, the liquid amount of the sealing liquid immediately recovers to a predetermined amount or more. Therefore, the liquid amount of the liquid seal in the liquid trap can be maintained at a predetermined amount or more. Therefore, it is possible to provide a substrate processing system that can suppress or prevent the liquid seal trap from being broken and thereby prevent the outside air from entering the exhaust introduction chamber.

According to a second aspect of the present invention, in the drainage pipe, a drainage valve that opens and closes the drainage pipe is provided on the downstream side of the liquid sealing trap, and the control device is configured to control the amount of the liquid seal. The substrate processing system according to claim 1, wherein the drain valve is closed when the liquid amount detected by the sensor is less than a predetermined amount.
According to this configuration, the drain valve is closed when it is detected that the liquid amount of the sealing liquid is less than the predetermined amount. By closing the drainage valve, it is possible to prevent backflow of the outside air inside the drainage pipe thereafter. Thereby, it can suppress more effectively that external air approachs into the inside of an exhaust introduction chamber.

  Further, depending on the setting of the predetermined amount, when the liquid amount of the sealing liquid is reduced to less than the predetermined amount, the liquid sealing trap may be broken soon or already broken. When it is detected that the amount of the sealing liquid is less than the predetermined amount, the drain valve is immediately closed, so that even if the liquid trap is broken, the outside air that flows back inside the drain pipe is The amount can be minimized.

The invention according to claim 3 is configured to branch from the liquid trap of the drain pipe and extend upward from the bottom of the drain pipe so that the liquid of the liquid trap can flow in. The substrate processing system according to claim 1, further comprising a measurement pipe, wherein the sealing liquid amount sensor includes a measurement liquid level sensor that detects a liquid level of the sealing liquid in the measurement pipe.
According to this configuration, the liquid sealed in the liquid ring trap flows into the measurement pipe from the bottom of the drain pipe. Since the liquid level in the measurement pipe is the same as the liquid level in the drain pipe, the liquid level in the measurement pipe is used to detect the liquid level in the measurement pipe. It is possible to accurately detect the amount of liquid that is flowing.

The invention according to claim 4 includes an optical sensor for optically detecting the liquid level of the sealing liquid in the measurement pipe from the outside of the pipe wall of the measurement pipe. The substrate processing system according to claim 3 , wherein at least a portion of the pipe wall of the measurement pipe facing the optical sensor is formed using a transparent material.
According to this configuration, the liquid level of the liquid is optically detected through the transparent tube wall of the measurement pipe by the optical sensor. Thereby, the liquid quantity of the liquid enclosed with the liquid sealing trap can be favorably detected using a simple sensor called an optical sensor.

In this case, since the drainage pipe is not directly related to detection by the optical sensor, it is not necessary to make the drainage pipe transparent. Therefore, it is possible to employ an opaque pipe as the drain pipe.
The invention according to claim 5 are provided corresponding to the plurality of the exhaust processing device further includes an internal exhaust exhaust introduction chamber, the exhaust gas discharging pipe for deriving the corresponding exhaust treatment device, each The exhaust lead-out pipe is provided with an exhaust valve for opening and closing the exhaust lead-out pipe, the exhaust valve has a valve body, and the liquid supply unit cleans the valve body of the exhaust valve. 5. The substrate processing system according to claim 1, further comprising a valve cleaning unit that supplies liquid to the valve body.

According to this configuration, since the liquid (that is, the cleaning liquid) is supplied to the inside of the exhaust introduction chamber using the valve cleaning unit, the supply device for supplying the liquid to the inside of the exhaust introduction chamber is compared with the case where another supply device is provided. Cost reduction.
The invention according to claim 6 includes the partition cleaning unit in which the liquid supply unit supplies a liquid to the partition in order to clean the partition of the exhaust introduction chamber. A substrate processing system according to claim 1.

According to this configuration, since the liquid (that is, the cleaning liquid) is supplied into the exhaust introduction chamber using the partition wall cleaning unit, the supply device for supplying the liquid to the inside of the exhaust introduction chamber is provided in comparison with other cases. Cost reduction.
The invention according to claim 7 is characterized in that the sealing liquid level sensor includes a sealing liquid level sensor that detects a liquid level of the sealing liquid in the liquid sealing trap, and the sealing liquid level sensor includes a liquid level of the sealing liquid. Is a first sealed liquid level sensor that detects whether or not a lower limit liquid level corresponding to the predetermined amount of liquid is reached, and a predetermined liquid level that is higher than the lower limit liquid level. It is a substrate processing system as described in any one of Claims 1-6 including the 2nd sealing liquid level sensor which detects whether the reference | standard liquid level is reached | attained.

  According to this configuration, it is possible to detect whether or not the liquid level of the liquid seal in the liquid ring trap has reached the reference liquid level and the lower limit liquid level. Thereby, it can be monitored whether the liquid level of the said sealing liquid has reached the reference liquid level, and it can also be monitored whether the liquid level of the said sealing liquid is less than a minimum liquid level.

It is the figure which looked at the substrate processing apparatus contained in the substrate processing system concerning one embodiment of this invention in the horizontal direction. It is the figure which looked at the exhaust gas switching device contained in the substrate processing system concerning one embodiment of this invention in the horizontal direction. It is sectional drawing seen from the cut surface line III-III of FIG. It is sectional drawing which shows the principal part of the 1st exhaust extraction piping of the said exhaust gas switching apparatus. It is a figure of the principal part of the drainage piping of the said exhaust_gas | exhaustion switching apparatus. It is a partial cross section figure of the principal part of the drainage piping. It is process drawing of an example of the chemical | medical solution process performed by the said substrate processing apparatus. It is process drawing for demonstrating the liquid level automatic adjustment of a sealing liquid. It is a figure for demonstrating the arrangement configuration of the sealing liquid level sensor which concerns on the modification of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a view of a substrate processing apparatus 1 included in a substrate processing system according to an embodiment of the present invention as viewed in the horizontal direction.
The substrate processing system includes a substrate processing apparatus 1 that processes a substrate W using a plurality of types of processing fluids, three exhaust processing apparatuses 45 to 47, and a destination of exhaust discharged from the substrate processing apparatus 1. According to the type of processing fluid used in the apparatus 1, an exhaust gas switching apparatus 2 that switches between three exhaust processing apparatuses (an acid exhaust processing apparatus 45, an alkaline exhaust processing apparatus 46 and a solvent exhaust processing apparatus 47) is included. . The substrate processing apparatus 1 is installed in a clean room, while the exhaust gas switching apparatus 2 is installed in a down space (for example, a basement floor) of a clean room called a sub-fab.

As shown in FIG. 1, the substrate processing apparatus 1 performs processing (cleaning processing, etching processing, etc.) using a processing liquid (chemical solution and rinsing solution) as a processing fluid on a substrate W such as a circular semiconductor wafer. This is a single-wafer type device. In the substrate processing apparatus 1, an acidic chemical solution, an alkaline chemical solution, and an organic solvent are used as the chemical solution.
The substrate processing apparatus 1 includes a spin chuck 4 that holds and rotates a substrate W in a chamber 3, and hydrofluoric acid (dilute hydrofluoric acid: DHF) as an example of an acidic chemical solution on the substrate W held by the spin chuck 4. An acidic chemical solution supply unit 5 for supply and an alkaline chemical solution for supplying SC1 (ammonia-hydrogen peroxide mixture) as an alkaline chemical solution to the surface of the substrate W held on the spin chuck 4. A supply unit 6; and an organic solvent supply unit 7 for supplying an isopropyl alcohol (IPA) liquid as an example of an organic solvent having a low surface tension to the surface of the substrate W held by the spin chuck 4. A rinsing liquid supply unit 8 for supplying a rinsing liquid to the surface of the substrate W held by the spin chuck 4, and a spin chuck. It includes a cylindrical processing cup 9 surrounding the 4, and a controller 10 for controlling the operation and opening and closing of the valve of the substrate processing apparatus 1 and the exhaust switching device system provided in 2.

  The chamber 3 includes a box-shaped partition wall 11 and an FFU (fan filter unit) 12 as a blower unit that sends clean air from above the partition wall 11 into the partition wall 11 (corresponding to the chamber 3). The spin chuck 4, the acidic chemical liquid nozzle 17 of the acidic chemical liquid supply unit 5, the alkaline chemical liquid nozzle 20 of the alkaline chemical liquid supply unit 6, the organic solvent nozzle 23 of the organic solvent supply unit 7, and the rinse liquid nozzle 26 of the rinse liquid supply unit 8 11 is housed and arranged.

  The FFU 12 is disposed above the partition wall 11 and attached to the ceiling of the partition wall 11. The FFU 12 sends clean air from the ceiling of the partition wall 11 into the chamber 3. The upstream end of the exhaust duct 40 is connected to the bottom of the processing cup 8, and the downstream end of the exhaust duct 40 is connected to the exhaust processing apparatuses 45 to 47 via the exhaust line 41 and the exhaust gas switching device 2 outside the machine. It is connected. By driving the exhaust source of the exhaust processing devices 45 to 47, the atmosphere inside the processing cup 8 is sucked from the bottom. A downflow (downflow) is formed in the chamber 3 by the FFU 12, the exhaust duct 40 and the exhaust gas switching device 2.

As the spin chuck 4, a clamping chuck that holds the substrate W horizontally with the substrate W sandwiched in the horizontal direction is employed. Specifically, the spin chuck 4 includes a spin motor 13, a spin shaft 14 integrated with a drive shaft of the spin motor 13, and a disc-shaped spin base attached substantially horizontally to the upper end of the spin shaft 14. 15 and the like.
On the upper surface of the spin base 15, a plurality of (three or more, for example, six) clamping members 16 are arranged on the peripheral edge thereof. The plurality of clamping members 16 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the peripheral edge of the upper surface of the spin base 15.

Further, the spin chuck 4 is not limited to the sandwich type, and for example, the substrate W is held in a horizontal posture by vacuum suction on the back surface of the substrate W, and further rotated around the vertical rotation axis in that state. By doing so, a vacuum suction type (vacuum chuck) that rotates the substrate W held by the spin chuck 4 may be employed.
The acidic chemical solution supply unit 5 includes an acidic chemical solution nozzle 17 that discharges hydrofluoric acid (acidic chemical solution) toward the surface of the substrate W, an acidic chemical solution pipe 18 that supplies hydrofluoric acid to the acidic chemical solution nozzle 17, and an acidic chemical solution pipe 18. An acidic chemical liquid valve 19 for switching supply and stop of supply of hydrofluoric acid to the acidic chemical liquid nozzle 17. The acidic chemical liquid nozzle 17 is a fixed nozzle that discharges hydrofluoric acid while the discharge port of the acidic chemical liquid nozzle 17 is stationary. When the acidic chemical liquid valve 19 is opened, hydrofluoric acid supplied from the acidic chemical liquid pipe 18 to the acidic chemical liquid nozzle 17 is discharged from the acidic chemical liquid nozzle 17 toward the center of the upper surface of the substrate W. The acidic chemical solution supply unit 5 may include an acidic chemical solution nozzle moving device that scans the position of hydrofluoric acid on the upper surface of the substrate W in the plane of the substrate W by moving the acidic chemical solution nozzle 17.

  The alkaline chemical solution supply unit 6 includes an alkaline chemical solution nozzle 20 that discharges SC1 (alkaline chemical solution) toward the surface of the substrate W, an alkaline chemical solution pipe 21 that supplies SC1 to the alkaline chemical solution nozzle 20, and an alkaline chemical solution from the alkaline chemical solution pipe 21. And an alkaline chemical valve 22 for switching supply and stop of supply of SC1 to the nozzle 20. The alkaline chemical nozzle 20 is a fixed nozzle that discharges SC1 while the discharge port of the alkaline chemical nozzle 20 is stationary. When the alkaline chemical liquid valve 22 is opened, the SC 1 supplied from the alkaline chemical liquid pipe 21 to the alkaline chemical nozzle 20 is discharged from the alkaline chemical nozzle 20 toward the center of the upper surface of the substrate W. The alkaline chemical solution supply unit 6 may include an alkaline chemical solution nozzle moving device that scans the liquid deposition position of the SC1 with respect to the upper surface of the substrate W in the plane of the substrate W by moving the alkaline chemical solution nozzle 20.

  The organic solvent supply unit 7 includes an organic solvent nozzle 23 that discharges IPA (organic solvent) toward the surface of the substrate W, an organic solvent pipe 24 that supplies IPA to the organic solvent nozzle 23, and an organic solvent from the organic solvent pipe 24. And an organic solvent valve 25 for switching supply and stop of IPA to the nozzle 23. The organic solvent nozzle 23 is a fixed nozzle that discharges IPA while the discharge port of the organic solvent nozzle 23 is stationary. When the organic solvent valve 25 is opened, IPA supplied from the organic solvent pipe 24 to the organic solvent nozzle 23 is discharged from the organic solvent nozzle 23 toward the center of the upper surface of the substrate W. The organic solvent supply unit 7 may include an organic solvent nozzle moving device that scans the IPA liquid deposition position with respect to the upper surface of the substrate W within the surface of the substrate W by moving the organic solvent nozzle 23.

  The rinsing liquid supply unit 8 includes a rinsing liquid nozzle 26 that discharges the rinsing liquid toward the substrate W held by the spin chuck 4, a rinsing liquid pipe 27 that supplies the rinsing liquid to the rinsing liquid nozzle 26, and a rinsing liquid pipe. And a rinse liquid valve 28 for switching between supply and stop of the rinse liquid supply from the nozzle 27 to the rinse liquid nozzle 26. The rinse liquid nozzle 26 is a fixed nozzle that discharges the rinse liquid in a state where the discharge port of the rinse liquid nozzle 26 is stationary. The rinsing liquid supply unit 8 may include a rinsing liquid nozzle moving device that moves the rinsing liquid landing position relative to the upper surface of the substrate W by moving the rinsing liquid nozzle 26.

  When the rinse liquid valve 28 is opened, the rinse liquid supplied from the rinse liquid pipe 27 to the rinse liquid nozzle 26 is discharged from the rinse liquid nozzle 26 toward the center of the upper surface of the substrate W. The rinse liquid is, for example, pure water (deionized water). The rinse liquid is not limited to pure water, but may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm).

  The processing cup 9 includes, for example, a cylindrical cylindrical wall 29 surrounding the spin chuck 4, and a plurality of cups 31, 32, 33 (first, second and second) disposed between the spin chuck 4 and the cylindrical wall 29. A third cup 31, 32, 33) and a plurality of guards 34 to 37 (first to fourth guards 34 to 37) for receiving the processing liquid (chemical solution and rinsing liquid) scattered around the substrate W; And a guard lifting / lowering unit (not shown) such as a ball screw mechanism that lifts and lowers the individual guards 34 to 37 independently. The processing cup 9 can be folded, and the processing cup 9 is expanded and folded by the guard lifting / lowering unit 50 moving up and down at least one of the four guards 34 to 37. In FIG. 1, for the sake of explanation, the processing cup 9 is shown in a different state on the right side and the left side of the rotation axis A <b> 1.

  Each of the cups 31 to 33 has a cylindrical shape, and surrounds the spin chuck 4 between the spin chuck 4 and the cylindrical wall 29. The second cup 32 that is the second from the inside is arranged outward from the innermost first cup 31, and the third cup 33 that is the third from the inside is outside the second cup 32. It is arranged in the direction. Each cup 31 to 33 forms an annular groove (not shown) that opens upward. The processing liquid guided to the cups 31 to 33 is sent to a collection facility or a drainage facility (not shown) through this groove. Thereby, the processing liquid used for processing the substrate W is collected or drained.

  As shown in FIG. 1, each of the guards 34 to 37 is cylindrical and surrounds the spin chuck 4 between the spin chuck 3 and the cylindrical wall 29. Each guard 34 to 37 includes a cylindrical inclined portion 38 that extends obliquely upward toward the rotation axis A <b> 1 and a cylindrical guide portion 39 that extends downward from the lower end of the inclined portion 38. The upper end portion of each inclined portion 38 constitutes the inner peripheral portion of the guards 34 to 37 and has a larger diameter than the substrate W and the spin base 15. The four inclined portions 38 are vertically stacked, and the four guide portions 39 are provided coaxially. The guide portions 39 of the inner three guards 34 to 36 can enter and exit the three cups 31 to 33, respectively. The guard elevating mechanism raises and lowers at least one of the four guards 34 to 37, whereby the processing cup 9 is expanded and folded.

  The guard lifting mechanism moves the guards 34 to 37 up and down between an upper position where the upper end of the guard is located above the substrate W and a lower position where the upper end of the guard is located below the substrate W. The guard lifting mechanism can hold the guards 34 to 37 at an arbitrary position between the upper position and the lower position. The supply of the processing liquid to the substrate W and the drying of the substrate W are performed in a state where any one of the guards 34 to 37 faces the peripheral end surface of the substrate W. For example, when the innermost first guard 34 is opposed to the peripheral end surface of the substrate W, all the guards 34 to 37 are arranged at the lower position (the state shown on the right side in FIG. 1). When the second guard 35 is opposed to the peripheral end surface of the substrate W, the first guard 34 is disposed at the lower position, and the second guard 35, the third guard 36, and the fourth guard 37 are disposed. Is placed in the upper position. When the third guard 36 is opposed to the peripheral end surface of the substrate W, the third guard 36 and the fourth guard 37 are arranged at the upper position, and the first guard 34 and the second guard 35 are arranged. Is arranged at the lower position (state shown on the left side of FIG. 1). When the fourth guard 37 is opposed to the peripheral end surface of the substrate W, the fourth guard 37 is disposed at the upper position, and the first guard 34, the second guard 35, and the third guard 36 are disposed. Is placed in the lower position.

The cylindrical wall 29 has a cylindrical shape. The upstream end of the exhaust duct 40 is connected to a predetermined circumferential position at the lower end of the cylindrical wall 29. The downstream end of the exhaust duct 40 is connected to an exhaust line 41 outside the machine. The atmosphere in the cylindrical wall 29 is guided to the exhaust gas switching device 2 through the exhaust duct 40 and the exhaust line 41.
FIG. 2 is a view of the exhaust gas switching device 2 included in the substrate processing system according to the embodiment of the present invention when viewed in the horizontal direction. FIG. 3 is a cross-sectional view taken along section line III-III in FIG. FIG. 4 is a cross-sectional view showing a main part of the first exhaust outlet pipe 62 of the exhaust gas switching device 2.

  The exhaust gas switching device 2 includes an apparatus housing 59, an exhaust introduction chamber 60 having an internal space, and one exhaust introduction pipe 61 for introducing exhaust from the chamber 3 of the substrate processing apparatus 1 into the exhaust introduction chamber 60. And three exhaust lead-out pipes 62 to 64 for discharging the exhaust inside the exhaust introduction chamber 60 and a liquid seal trap 65 in the middle, and drains liquid (cleaning liquid) from the inside of the exhaust introduction chamber 60. One drainage pipe 66 for supplying the liquid, the outlet chamber cleaning unit 67 for supplying the liquid (cleaning liquid) to the inside of the exhaust introduction chamber 60, and the liquid amount of the sealing liquid SL (see FIG. 6) of the liquid sealing trap 65 A first sealing liquid level sensor 68 (measuring liquid level sensor; see FIGS. 5 and 6). The operation of the device provided in the exhaust gas switching device 2 and the opening / closing of the valve are controlled by the control device 10 of the substrate processing apparatus 1.

The device housing 59 has a box shape, and is supported on the leg portions 58 provided at the four corners of the lower surface thereof and placed on the floor surface 57 of the subfab. A caster (not shown) may be provided instead of / in addition to the leg portion 58. In this case, the caster rolls on the floor surface 57, so that the apparatus housing 5 can be moved smoothly, and the exhaust The switching device 2 can be easily installed.
The exhaust introduction chamber 60 is partitioned by a box-shaped partition wall 69 having a rectangular shape in plan view, and is provided in an upper portion of the apparatus housing 59. The partition wall 69 includes a horizontal top wall 70, a rectangular side wall 71 in plan view, and a bottom wall 72. The bottom wall 72 is configured to have the lowest central portion in plan view, and a drain port 73 is formed at the lowest portion. The bottom wall 72 is formed by combining four inclined surfaces that are inclined downward toward the drainage port 73. The cleaning liquid is supplied to the inside of the exhaust introduction chamber 60. The cleaning liquid received by the bottom wall 72 formed of an inclined surface has a difference in height from the drainage port 73, so that the drainage port 73 is caused by its weight. It flows toward.

An exhaust inlet 58 and first, second and third exhaust outlets 74 to 76 are formed in the top wall 70 of the exhaust inlet chamber 60. An exhaust introduction pipe 61 is connected to the exhaust introduction port 58. The exhaust introduction pipe 61 is connected to the downstream end of the exhaust line 41 via a joint (not shown).
A first exhaust outlet pipe 62 is connected to the first exhaust outlet 74, and a second exhaust inlet pipe 63 is connected to the second exhaust outlet 75. A third exhaust introduction pipe 64 is connected to the third exhaust outlet 76.

  The first exhaust outlet piping 62 is connected to the upstream end of the first exhaust piping 78 connected to the acid exhaust treatment device 45 through the first joint 77. The first exhaust outlet pipe 62 is provided with a first exhaust valve 79 for opening and closing the first exhaust outlet pipe 62. The first exhaust valve 79 is, for example, a butterfly valve. As shown in FIG. 4, the first exhaust valve 79 includes a short cylindrical valve box 80 fixed to the pipe wall of the first exhaust lead-out pipe 62, and a disc shape disposed inside the valve box 80. A valve body 81, a valve stem (stem) 82 as a pivot shaft extending horizontally along the diameter of the valve body 30, and a rotation drive unit 83 for rotating the valve body 81 around the valve rod 82. Including. The rotation drive unit 83 includes, for example, a cylinder and a motor. The rotation drive unit 83 rotates the valve body 81 to close the valve body 81 inside the valve box 80 (horizontal position) and to open at least a part of the valve box 80 (tilt position) Alternatively, the opening and closing of the first exhaust outlet piping 62 is switched by switching between the first exhaust outlet piping 62 and the vertical posture. In FIG. 4, a state in which the valve body 81 is in a vertical posture that is rotated 90 ° from a horizontal posture is indicated by a two-dot chain line. By adjusting the rotation angle of the valve element 81 by the rotation drive unit 83, the angle of the valve element 81 with respect to the valve box 80 can be adjusted, so that the opening degree of the first exhaust outlet pipe 62 can be adjusted. The exhaust flow rate from the exhaust introduction chamber 60 can also be adjusted.

  As shown in FIG. 1, the second exhaust outlet pipe 63 is connected to the upstream end of the second exhaust pipe 85 whose downstream end is connected to the alkaline exhaust treatment device 46 via the second joint 84. Yes. A second exhaust valve 86 for opening and closing the second exhaust lead-out pipe 63 is interposed in the second exhaust lead-out pipe 63. Since the second exhaust valve 86 has the same configuration as the first exhaust valve 79, description thereof is omitted. The second exhaust outlet piping 63 and the configuration related to the piping 63 (second exhaust valve 86 and second valve cleaning nozzle 99) are shown in parentheses in FIG.

  The third exhaust outlet pipe 64 is connected via a third joint 87 to the upstream end of the third exhaust pipe 88 whose downstream end is connected to the solvent exhaust treatment device 47. A third exhaust valve 89 for opening and closing the third exhaust lead-out pipe 64 is interposed in the third exhaust lead-out pipe 64. Since the third exhaust valve 89 has the same configuration as the first exhaust valve 79, the description thereof is omitted. The third exhaust lead-out pipe 64 and the configuration related to the pipe 64 (the third exhaust valve 89 and the third valve cleaning nozzle 100) are shown in parentheses in FIG.

  Each of the three exhaust processing devices 45 to 47 includes an exhaust source, and the three exhaust processing devices 45 to 47 are always operating during operation of the substrate processing system. Due to the operation of the exhaust sources of the exhaust treatment devices 45 to 47, the insides of the corresponding exhaust pipes 78, 85, 88 are forcibly exhausted. By opening and closing the first to third exhaust valves 79, 86, and 89, the exhaust treatment device communicating with the inside of the exhaust introduction chamber 60 can be switched between the three exhaust treatment devices 45 to 47.

  When the second and third exhaust valves 86 and 89 are closed and the first exhaust valve 79 is opened, the inside of the exhaust introduction chamber 60 is connected to the first exhaust outlet pipe 62 and the first exhaust pipe. It communicates with the inside of the acid exhaust treatment device 45 through 78. Since the inside of the first exhaust pipe 78 is forcibly exhausted, the exhaust inside the exhaust introduction chamber 60 is led out to the acid exhaust treatment device 45 via the first exhaust lead-out pipe 62 and the first exhaust pipe 78. Is done.

  When the first and third exhaust valves 79 and 89 are closed and the second exhaust valve 86 is opened, the inside of the exhaust introduction chamber 60 is connected to the second exhaust outlet pipe 63 and the second exhaust pipe. 85 is communicated with the inside of the alkali exhaust treatment device 46. Since the inside of the second exhaust pipe 85 is forcibly exhausted, the exhaust inside the exhaust introduction chamber 60 is led out to the alkaline exhaust treatment device 46 via the second exhaust lead-out pipe 63 and the second exhaust pipe 85. Is done.

  When the first and second exhaust valves 79 and 86 are closed and the third exhaust valve 89 is opened, the interior of the exhaust introduction chamber 60 is connected to the third exhaust outlet pipe 64 and the third exhaust pipe. 88 communicates with the inside of the solvent exhaust treatment device 47. Since the inside of the third exhaust pipe 88 is forcibly exhausted, the exhaust inside the exhaust introduction chamber 60 is led out to the solvent exhaust treatment device 47 via the third exhaust lead-out pipe 64 and the third exhaust pipe 88. Is done.

By opening and closing the first to third exhaust valves 79, 86 and 89, the exhaust destination of the exhaust inside the exhaust introduction chamber 60 can be switched between the three exhaust treatment devices 45 to 47. In other words, since the inside of the exhaust introduction chamber 60 is always in communication with any one of the three exhaust treatment devices 45 to 47, the inside of the exhaust introduction chamber 60 is always maintained at a negative pressure.
By the way, since three kinds of chemical atmospheres such as acid exhaust, alkali exhaust and solvent exhaust circulate in the exhaust introduction chamber 60, the minute atmosphere contained in the chemical atmosphere is contained in the inner wall of the partition wall 69 of the exhaust introduction chamber 60. Liquid droplets adhere. Particularly, in the vicinity of the valve body 81 of the exhaust valves 79, 86, 89, the amount of droplets adhering increases as the wind speed increases. Furthermore, when different types of attached chemicals come into contact with each other in the exhaust introduction chamber 60, the chemicals may react to generate crystals. For this reason, the exhaust gas switching device 2 employs a configuration in which the inner wall of the partition wall 69 of the exhaust introduction chamber 60 and the valve body 81 of the exhaust valves 79, 86, 89 can be cleaned using a cleaning liquid.

The drainage pipe 66 is a pipe for drawing out (discharges) the used cleaning liquid to the outside of the machine, and is provided to prevent the used cleaning liquid from staying in the exhaust introduction chamber 60. The upstream end of the drainage pipe 66 is connected to the drainage port 73. A liquid seal trap 65 and a drain valve 90 are interposed in the drain pipe 66 sequentially from the drain port 73 side.
A liquid sealing trap 65 in which a liquid (sealing liquid SL (see FIG. 6)) is sealed is provided in the middle of the drainage pipe 66. The liquid seal trap 65 is provided to prevent the outside air from flowing back inside the drainage pipe 66 and entering the inside of the negative pressure exhaust introduction chamber 60.

FIG. 5 is a diagram of a main part of the drainage pipe 66 of the exhaust gas switching device 2. FIG. 6 is a partial cross-sectional view of the main part of the drainage pipe 66.
The drainage pipe 66 is configured by combining a plurality of pipes and pipe joints. The liquid seal trap 65 is configured, for example, as a P-type tubular trap, and has a bottom 92 in the middle of the flow direction. A cleaning liquid (liquid) used for cleaning the exhaust introduction chamber 60 flows into the liquid sealing trap 65 from the drain port 73, and the liquid sealing trap 65 holds the cleaning liquid as the sealing liquid SL.

  The liquid sealing trap 65 is provided with a measurement pipe 93 extending in the vertical direction in parallel with the liquid sealing trap 65. The measurement pipe 93 has a lower end branched from a branch position 92A of the bottom portion 92 of the liquid seal trap 65 in the drainage pipe 66, and an upper portion above the bottom 92 in the drainage pipe 66 (upper part). 94. The entire area of the measurement pipe 93 is a transparent pipe formed using a transparent resin material (for example, PVC (polyvinyl chloride) clear material). In this embodiment, the bottom portion 92 of the liquid seal trap 65 is constituted by a pipe joint 92B having a predetermined length extending in the horizontal direction, and the upper portion 94 of the drainage pipe 66 is constituted by a pipe joint 94A. . Thereby, branching and merging of the measurement pipe 93 with respect to the drain pipe 66 can be realized with a simple configuration.

The sealing liquid SL held in the liquid sealing trap 65 flows into the measurement pipe 93 from the branch position 92 </ b> A of the bottom portion 92. The liquid level of the sealing liquid SL in the measurement pipe 93 is equal to the liquid level of the sealing liquid SL in the liquid sealing trap 65. Therefore, by detecting the liquid level of the sealing liquid SL in the measurement pipe 93, the liquid level The amount of the sealing liquid SL in the sealing trap 65 can be accurately measured.
The sealing liquid level sensor 68 is arranged at a height position of a predetermined lower limit liquid level DP (see FIG. 6). The sealing liquid level sensor 68 detects whether or not the liquid level of the sealing liquid SL in the measurement pipe 93 has reached the lower limit liquid level DP (see FIG. 6). The first sealing liquid level sensor 68 is, for example, a reflection type or transmission type optical sensor, and optically detects the presence or absence of the sealing liquid SL through the transparent tube wall of the measurement pipe 93. The first sealing liquid level sensor 68 is an on / off sensor, and outputs an on signal when the sealing liquid SL is detected, and outputs an off signal when the sealing liquid SL is not detected. As described above, the amount of the sealing liquid SL in the liquid sealing trap 65 can be favorably detected using a simple sensor called an optical sensor.

On the other hand, the pipes and pipe joints constituting the drainage pipe 66 are formed using an opaque transparent resin material (for example, a colored material of PVC (polyvinyl chloride)) because it is not directly related to detection by the optical sensor. In FIG. 5, opaque piping and pipe joints are hatched).
In this embodiment, the lower limit liquid level DP is set slightly higher than the lower end of the measurement pipe 93 as shown in FIG. That is, when the liquid level of the sealing liquid SL in the measurement pipe 93 has just reached the lower limit liquid level DP, the liquid sealing trap 65 is broken soon, but the liquid sealing trap 65 is not yet broken.

As shown in FIG. 2, the drain valve 90 is a valve for opening and closing the drain pipe 66. As will be described later, when the liquid level of the sealing liquid SL is less than the lower limit liquid level DP, the liquid discharge valve 90 is closed to prevent the outside air from flowing back through the liquid discharge pipe 66. Except for the case where the liquid level of the sealing liquid SL is less than the lower limit liquid level DP, the drain valve 90 is always open.
The outlet chamber cleaning unit 67 includes a valve cleaning unit 96 for cleaning the exhaust valves 79, 86, and 89, and a partition wall cleaning unit 97 for cleaning the partition wall 69 of the exhaust introduction chamber 60.

  The valve cleaning unit 96 includes a first valve cleaning nozzle 98 for cleaning the first exhaust valve 79, a second valve cleaning nozzle 99 for cleaning the second exhaust valve 86, and a third And a third valve cleaning nozzle 100 for cleaning the exhaust valve 89. As shown in FIG. 4, the first to third valve cleaning nozzles 98 to 100 are arranged with their discharge ports directed toward the center of the valve body 81 of the corresponding exhaust valves 79, 86, and 89. . The cleaning liquid from the cleaning liquid supply source is supplied to the valve cleaning nozzles 98 to 100 via the first cleaning liquid valve 101. When the first cleaning liquid valve 101 is opened, the processing liquid is discharged from the first, second, and third valve cleaning nozzles 100, and the valve bodies 81 of the first to third exhaust valves 79, 86, and 89 are discharged. Crystals and droplets that have landed on the center and have adhered to each valve body 81 are washed away by the cleaning liquid.

The cleaning liquid is, for example, pure water (deionized water), but the cleaning liquid is not limited to pure water, but carbonated water, electrolytic ionic water, hydrogen water, ozone water, and dilution concentrations (for example, about 10 to 100 ppm). ) Of hydrochloric acid water. The same applies to the cleaning liquid used in the exhaust gas switching device 2.
The partition wall cleaning unit 97 includes a partition wall cleaning nozzle 102 disposed inside the exhaust introduction chamber 60. The partition wall cleaning nozzle 102 includes a nozzle body 103 and a plurality of laterally directed injection ports 104 arranged at equal intervals on the outer periphery of the nozzle body 103. In this embodiment, as shown in FIG. 3, a pair of partition wall cleaning nozzles 102 are provided side by side along the longitudinal direction of the exhaust introduction chamber 60 so that the cleaning liquid can be sprayed over a wide range of the partition wall 69 having a rectangular shape in plan view. It has been. The pair of partition wall cleaning nozzles 102 is supplied with a cleaning liquid from a cleaning liquid supply source via a second cleaning liquid valve 105. When the second cleaning liquid valve 105 is opened, a cleaning liquid jet is ejected laterally and radially from the plurality of ejection ports 104 of each partition wall cleaning nozzle 102. The jet of the sprayed cleaning liquid is sprayed on the side wall 71, and crystals and droplets adhering to the side wall 71 are washed away by the cleaning liquid.

FIG. 7 is a process diagram of an example of chemical processing performed by the substrate processing apparatus 1. The control flow of the substrate processing apparatus 1 and the exhaust gas switching apparatus 2 in the chemical processing will be described mainly with reference to FIGS. 1, 2, 6, and 7.
During the operation of the substrate processing system, the exhaust processing devices 45 to 47 and the exhaust gas switching device 2 are always operating. Therefore, the inside of the exhaust introduction chamber 60 is always maintained at a negative pressure, and the inside of the exhaust duct 40 is It is forcibly exhausted. At the start of substrate processing, for example, the second and third exhaust valves 86 and 89 are closed and the first exhaust valve 79 is opened. As a result, the exhaust outlet of the exhaust gas switching device 2 (in the exhaust gas introduction chamber 60) can be set to the acid exhaust gas processing device 45.

  During chemical processing, a transfer robot (not shown) is controlled, and an unprocessed substrate W is carried into the chamber 3 of the substrate processing apparatus 1 (step S1). The substrate W is transferred to the spin chuck 4 with its surface (device formation surface) facing upward. In addition, before carrying in this board | substrate W, the 1st-4th guards 34-37 are lowered | hung to a lower position (lowermost position) so that the carrying in may not be prevented, and the 1st-4th guards 34- The upper ends of 37 are all disposed below the position where the spin chuck 4 holds the substrate W.

After the substrate is held on the spin chuck 4, the control device 10 controls the guard lifting / lowering unit so that a predetermined guard (for example, the second guard 35) is opposed to the peripheral end surface of the substrate W. Control the height of the.
Next, the control device 10 starts the rotation of the substrate W by the spin motor 13 (step S2). The substrate W is raised to a predetermined liquid processing speed and maintained at the liquid processing speed.

The control device 10 opens the first exhaust valve 79 with the second and third exhaust valves 86 and 89 of the exhaust gas switching device 2 closed. As a result, the exhaust exhaust destination of the exhaust gas switching device 2 (in the exhaust introduction chamber 60) is set to the acid exhaust treatment device 45.
When the rotation speed of the substrate W reaches the liquid processing speed, the control device 10 then performs a hydrofluoric acid process for supplying hydrofluoric acid (acidic chemical solution) to the substrate W (step S3). In the hydrofluoric acid step (S 3), the control device 10 opens the acidic chemical liquid valve 19 and discharges hydrofluoric acid from the discharge port of the acidic chemical liquid nozzle 17. The hydrofluoric acid discharged from the acidic chemical solution nozzle 17 is deposited on the upper surface of the substrate W, and then receives the centrifugal force generated by the rotation of the substrate W and flows outwardly from the upper surface of the substrate W. As a result, hydrofluoric acid spreads over the entire upper surface of the substrate W, and a process using hydrofluoric acid is performed over the entire upper surface of the substrate W. The hydrofluoric acid supplied to the upper surface of the substrate W is scattered from the peripheral portion of the substrate W toward the side of the substrate W, received by the inner wall of the second guard 35, and guided to the second cup 32. The liquid is collected or drained (for example, collected) through the bottom of the second cup 32. Further, as described above, when the acidic chemical solution supply unit 5 includes the acidic chemical solution nozzle moving device, the position of the hydrofluoric acid with respect to the upper surface of the substrate W is set to the surface of the substrate W by moving the acidic chemical solution nozzle 17. You may make it scan within.

  By supplying hydrofluoric acid to the substrate W, a mist (fine droplets) of hydrofluoric acid is generated inside the processing cup 9, and the atmosphere inside the processing cup 9 becomes an atmosphere containing hydrofluoric acid. Therefore, an atmosphere containing hydrofluoric acid is introduced from the processing cup 9 into the exhaust introduction chamber 60 of the exhaust gas switching device 2 through the exhaust duct 40 and the exhaust line 41. At this time, since the exhaust outlet of the exhaust gas switching device 2 (in the exhaust introduction chamber 60) is set to the acid exhaust treatment device 45, the exhaust atmosphere introduced into the exhaust introduction chamber 60 is the first exhaust pipe 78. To the acid exhaust treatment device 45.

When a predetermined period has elapsed since the start of hydrofluoric acid discharge, the control device 10 closes the acidic chemical liquid valve 19 and stops the hydrofluoric acid discharge. Thereby, a hydrofluoric acid process (S3) is complete | finished.
Next, the control device 10 controls the guard lifting mechanism so that the first guard 34 faces the peripheral end surface of the substrate W. In this state, a rinsing step (step S4) for supplying the rinsing liquid to the substrate W is performed. Specifically, the control device 10 opens the rinse liquid valve 28 and discharges the rinse liquid from the rinse liquid nozzle 26 toward the center of the upper surface of the substrate W. The rinse liquid deposited on the center of the upper surface of the substrate W receives a centrifugal force due to the rotation of the substrate W and flows toward the peripheral edge of the substrate W on the upper surface of the substrate W. As a result, hydrofluoric acid is washed away in the entire upper surface of the substrate W. After the rinse liquid supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W, received by the inner wall of the first guard 34, and guided to the first cup 31. The liquid is drained through the bottom of the first cup 31.

When a predetermined period has elapsed from the start of the discharge of the rinse liquid, the control device 10 closes the rinse liquid valve 28 and stops the discharge of the rinse liquid. Thereby, a rinse process (S4) is complete | finished.
Next, the control device 10 controls the guard lifting mechanism so that the third guard 36 faces the peripheral end surface of the substrate W. In addition, the second exhaust valve 86 is opened while the first exhaust valve 79 of the exhaust gas switching device 2 is closed, whereby the first and third exhaust valves 79 and 89 are closed and the second exhaust valve is opened. 86 is switched to the open state. That is, the exhaust outlet of the exhaust gas switching device 2 (in the exhaust gas introduction chamber 60) is switched from the acid exhaust gas processing device 45 to the alkaline exhaust gas processing device 46.

  In these states, the SC1 process (step S5) for supplying SC1 to the substrate W is performed. In the SC1 step (S5), the control device 10 opens the alkaline chemical liquid valve 22 and discharges SC1 from the discharge port of the alkaline chemical liquid nozzle 20. The SC1 discharged from the alkaline chemical nozzle 20 is deposited on the upper surface of the substrate W, and then receives the centrifugal force generated by the rotation of the substrate W and flows outwardly from the upper surface of the substrate W. Thereby, SC1 is spread over the entire upper surface of the substrate W, and the process using SC1 is performed over the entire upper surface of the substrate W. The SC1 supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W, received by the inner wall of the third guard 36, and guided to the third cup 33. It is collected or drained (for example, collected) through the bottom of the third cup 33. Further, as described above, when the alkaline chemical liquid supply unit 6 includes the alkaline chemical nozzle moving device, the SC1 liquid deposition position with respect to the upper surface of the substrate W is set within the plane of the substrate W by moving the alkaline chemical nozzle 20. You may make it scan with.

  By supplying SC1 to the substrate W, mist (fine droplets) of SC1 is generated inside the processing cup 9, and the atmosphere inside the processing cup 9 becomes an atmosphere including SC1. Therefore, the atmosphere including SC <b> 1 from the processing cup 9 is introduced into the exhaust introduction chamber 60 of the exhaust gas switching device 2 through the exhaust duct 40 and the exhaust line 41. At this time, since the exhaust exhaust destination of the exhaust gas switching device 2 (in the exhaust introduction chamber 60) is set to the alkaline exhaust treatment device 46, the exhaust atmosphere introduced into the exhaust introduction chamber 60 is the second exhaust pipe 85. To the alkaline exhaust treatment device 46.

When a predetermined period has elapsed from the start of SC1 discharge, the control device 10 closes the alkaline chemical valve 22 to stop SC1 discharge. Thereby, SC1 process (S5) is complete | finished.
Next, the control device 10 controls the guard lifting mechanism so that the first guard 34 faces the peripheral end surface of the substrate W. In this state, a rinsing step (step S6) for supplying the rinsing liquid to the substrate W is performed. Specifically, the control device 10 opens the rinse liquid valve 28 and discharges the rinse liquid from the rinse liquid nozzle 26 toward the center of the upper surface of the substrate W. The rinse liquid deposited on the center of the upper surface of the substrate W receives a centrifugal force due to the rotation of the substrate W and flows toward the peripheral edge of the substrate W on the upper surface of the substrate W. Thereby, SC1 is washed out in the whole area of the upper surface of the substrate W. After the rinse liquid supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W, received by the inner wall of the first guard 34, and guided to the first cup 31. The liquid is drained through the bottom of the first cup 31.

When a predetermined period has elapsed from the start of the discharge of the rinse liquid, the control device 10 closes the rinse liquid valve 28 and stops the discharge of the rinse liquid. Thereby, a rinse process (S6) is complete | finished.
Next, the control device 10 controls the guard lifting mechanism so that the fourth guard 36 faces the peripheral end surface of the substrate W. Further, the third exhaust valve 89 is opened while the second exhaust valve 86 of the exhaust gas switching device 2 is closed, whereby the first and second exhaust valves 79 and 86 are closed, and the third exhaust valve is opened. 89 is switched to the open state. That is, the exhaust outlet of the exhaust gas switching device 2 (inside the exhaust introduction chamber 60) is switched from the alkaline exhaust gas processing device 46 to the solvent exhaust gas processing device 47. Next, an IPA replacement step (step S7) for replacing with IPA is performed.

  In the IPA replacement step (S7), the rotation of the substrate W held by the spin chunk 4 is decelerated to a low speed (about 10 to 50 rpm). After the substrate W is decelerated, the control device 10 opens the organic solvent valve 25 and discharges IPA from the discharge port of the organic solvent valve 25. The discharged IPA spreads the upper surface of the substrate W outward, and the rinse liquid on the upper surface of the substrate W is replaced with IPA. As a result, the IPA liquid film covering the entire upper surface of the substrate W is held in a paddle shape. After the IPA liquid film is formed on the substrate W, the supply of IPA may be stopped, but the supply of IPA may be continued as it is. The IPA supplied to the upper surface of the substrate W is discharged from the peripheral edge of the substrate W to the side of the substrate W and is received by the inner wall of the fourth guard 36. Further, as described above, when the organic solvent supply unit 7 includes the organic solvent nozzle moving device, the IPA liquid landing position with respect to the upper surface of the substrate W is set within the surface of the substrate W by moving the organic solvent nozzle 23. You may make it scan with.

  By supplying IPA to the substrate W, IPA mist (fine droplets) is generated inside the processing cup 9, and the atmosphere inside the processing cup 9 becomes an atmosphere containing IPA. Therefore, the atmosphere containing IPA is introduced from the processing cup 9 into the exhaust introduction chamber 60 of the exhaust gas switching device 2 through the exhaust duct 40 and the exhaust line 41. At this time, since the exhaust exhaust destination of the exhaust gas switching device 2 (in the exhaust introduction chamber 60) is set to the solvent exhaust treatment device 47, the exhaust atmosphere introduced into the exhaust introduction chamber 60 is the third exhaust pipe 88. To the solvent exhaust treatment device 47.

  When a predetermined period has elapsed from the start of IPA discharge, the control device 10 closes the alkaline chemical valve 22 to stop IPA discharge. Thereby, the IPA replacement step (S7) is completed. Thereafter, the control device 10 controls the spin motor 13 to accelerate the substrate W to a high rotation speed and maintain this high rotation speed (S8: spin dry process). Thereby, the rinse liquid adhering to the substrate W is shaken off and the substrate W is dried. When the spin dry process (S8) is performed over a predetermined period, the control device 10 drives the spin motor 13 to stop the rotation of the spin chuck 4 (rotation of the substrate W) (step S9). As a result, the chemical processing for one substrate W is completed, and the processed substrate W is unloaded from the chamber 3 by the transfer robot (step S10). The processing example shown in FIG. 7 is merely an example, and it goes without saying that processing other than this processing example can be executed.

Further, in this embodiment, an introduction chamber cleaning process for cleaning the inside and members of the exhaust introduction chamber 60 of the exhaust gas switching device 2 is executed.
In the introduction chamber cleaning process, the control device 10 opens the first and second cleaning liquid valves 101 and 105 to discharge the cleaning liquid from the valve cleaning nozzles 98 to 100 and the cleaning liquid from the partition wall cleaning nozzle 102. Is done.

  By supplying the cleaning liquid from the valve cleaning nozzles 98 to 100 to the valve bodies 81 of the first to third exhaust valves 79, 86, and 89, the crystals and droplets adhering to each valve body 81 are removed from the cleaning liquid. Washed away by. In addition, the cleaning liquid supplied to each valve body 81 enters the exhaust introduction chamber 60 through the exhaust outlets 74 to 76. The cleaning liquid travels through the partition wall 69 (the side wall 71 and the bottom wall 72) of the exhaust introduction chamber 60, reaches the drainage port 73 provided at the lowest position of the bottom wall 72, and passes through the drainage port 73 to the inside of the drainage pipe 66. Flow into.

  Further, the cleaning liquid discharged from the partition wall cleaning nozzle 102 is sprayed onto the partition wall 69 (particularly the side wall) of the exhaust introduction chamber 60, and crystals and droplets adhering to the partition wall 69 (particularly the side wall 71) of the exhaust introduction chamber 60 are sprayed. Rinse away with cleaning solution. It travels through the partition wall 69 (side wall 71 and bottom wall 72) of the exhaust introduction chamber 60, reaches the drainage port 73 provided at the lowest position of the bottom wall 72, and flows into the drainage pipe 66 from the drainage port 73. To do.

The cleaning liquid that has flowed into the drainage pipe 66 flows through the drainage pipe 66 and is stored in the liquid seal trap 65. The cleaning liquid overflowing from the liquid seal trap 65 flows through the drainage pipe 66 and is discharged (drained) from the downstream end to the outside of the apparatus.
Next, automatic adjustment of the liquid level of the sealing liquid SL in the liquid sealing trap 65 of the exhaust gas switching device 2 will be described. During operation of the exhaust gas switching device 2, the liquid level of the sealing liquid SL is constantly monitored and adjusted.

FIG. 8 is a process diagram for explaining the automatic liquid level adjustment of the sealing liquid SL. In the following, reference is made to FIG. 6 and FIG.
During the operation of the exhaust gas switching device 2, the control device 10 determines whether or not the detection output of the first sealing liquid level sensor 68 is on, that is, the liquid level of the sealing liquid SL is equal to or higher than a predetermined lower limit liquid level DP. Is monitored (step S11). When the detection output of the first sealing liquid level sensor 68 is on (YES in step S11), that is, when the detection liquid level is equal to or higher than the predetermined lower limit liquid level DP, the first and second cleaning liquid valves 101 and 105 are used. Is opened (YES in step S12), the first and second cleaning liquid valves 101 and 105 are closed (step S13). Then, the control device 10 opens the drain valve 90 when the drain valve 90 is closed (YES in step S14) (step S15), and when the drain valve 90 is already opened (step S15). In step S14, NO) the drain valve 90 is maintained in its open state. Thereafter, the processing of FIG. 8 is returned as it is.

  On the other hand, when the detection output of the first sealing liquid level sensor 68 is OFF (NO in step S11), that is, when the detected liquid level is lower than the predetermined lower limit liquid level DP, the drain valve 90 is opened. In this case (YES in step S16), the control device 10 closes the drain valve 90 (step S17), and when the drain valve 90 is already closed (NO in step S16), the control device 10 closes the drain valve. 90 is maintained in its closed state. When the first and second cleaning liquid valves 101 and 105 are closed (YES in step S18), the control device 10 opens the first and second cleaning liquid valves 101 and 105 (step S19). If the first and second cleaning liquid valves 101 and 105 are already opened (NO in step S18), the first and second cleaning liquid valves 101 and 105 are maintained in their open states. Thereafter, the processing of FIG. 8 is returned as it is.

That is, when the detected liquid level is equal to or higher than the predetermined lower limit liquid level DP, it is determined that the amount of the sealing liquid SL in the liquid sealing trap 65 is sufficient, and the drain valve 90 is maintained in the opened state.
Thereafter, when the liquid level of the sealing liquid SL drops below the lower limit liquid level DP from the state in which it is equal to or higher than the lower limit liquid level DP, the control device 10 immediately closes the drain valve 90 and the valve cleaning nozzle. The supply of the cleaning liquid from 98 to 100 and the partition wall cleaning nozzle 102 into the exhaust introduction chamber 60 is started.

  Thereafter, the cleaning liquid (liquid) is supplied into the exhaust introduction chamber 60 from the outlet chamber cleaning unit 67, so that the amount of the sealing liquid SL in the liquid sealing trap 65 is recovered, and the liquid level of the sealing liquid SL again becomes the lower limit When returning to the liquid level DP or higher, the control device 10 closes the first and second cleaning liquid valves 101 and 105 to stop the supply of the cleaning liquid from the valve cleaning nozzles 98 to 100 and the partition wall cleaning nozzle 102, Open the drain valve 90.

  As described above, according to this embodiment, the first sealing liquid level sensor 68 detects that the liquid level of the sealing liquid SL in the liquid sealing trap 65 is less than the lower limit liquid level DP. When the liquid level of the sealing liquid SL has dropped to below the lower limit liquid level DP, the liquid sealing trap 65 is torn up soon. Then, based on the fact that the liquid level of the sealing liquid SL is detected to be lower than the lower limit liquid level DP, the cleaning liquid is supplied into the exhaust introduction chamber 60 and the cleaning liquid is supplied to the liquid sealing trap 65. The sealing liquid SL of the liquid sealing trap 65 is replenished. Therefore, since the liquid level of the sealing liquid SL is restored to the lower limit liquid level DP or more, the liquid sealing trap 65 can be reliably prevented from being broken. Accordingly, it is possible to prevent the outside air from entering the exhaust introduction chamber 60.

Further, when it is detected that the liquid level of the sealing liquid SL is lower than the lower limit liquid level DP, the drain valve 90 is closed. By closing the drain valve 90, it is possible to prevent the backflow of the outside air inside the drain pipe 66 thereafter. Even if the liquid trap 65 is broken, the amount of outside air that flows back through the drainage pipe 66 can be minimized.
Further, since the cleaning liquid is supplied into the exhaust introduction chamber 60 using the valve cleaning unit 96 and the partition wall cleaning unit 97 (outlet chamber cleaning unit 67), a supply device for supplying liquid into the exhaust introduction chamber 60 is provided. Cost reduction can be achieved compared with the case where it is provided elsewhere.

As mentioned above, although one Embodiment of this invention was described, this invention can also be implemented with another form.
As shown in FIG. 9, in addition to the first sealed liquid level sensor 68, a second sealed liquid level sensor 200 that detects whether or not a predetermined reference liquid level SP higher than the lower limit liquid level DP has been reached. It may be provided. The second sealed liquid level sensor 200 is, for example, an optical sensor like the first sealed liquid level sensor 68. The sealing liquid level sensors 68 and 200 can detect whether or not the liquid level of the sealing liquid in the liquid sealing trap has reached the reference liquid level SP and the lower limit liquid level DP, respectively.

  When the liquid level of the sealing liquid SL in the measurement pipe 93 is higher than the reference liquid level SP, the liquid sealing trap 65 is naturally not broken and there is no risk of breaking soon. When the liquid level falls below the reference liquid level SP, the liquid level is recovered by opening the cleaning liquid valves 101 and 105. Furthermore, the drain valve 90 is closed only when the liquid level is lower than the lower limit liquid level DP. Thereby, it is possible to monitor whether or not the liquid level of the sealing liquid SL has reached the reference liquid level SP, and at the same time, it is possible to monitor whether or not the liquid level of the sealing liquid SL is less than the lower limit liquid level DP. Thus, the liquid level management of the sealing liquid SL can be performed more safely by monitoring the liquid amount (liquid level) of the sealing liquid in two stages.

  In the above-described embodiment, the lower limit liquid level DP can be set as the lower end position of the measurement pipe 93. In this case, when the liquid level of the sealing liquid SL in the measurement pipe 93 is lowered below the lower limit liquid level DP, the liquid sealing trap 65 is broken. In this case, based on the detection that the liquid level of the sealing liquid SL is less than the lower limit liquid level DP, the cleaning liquid is supplied into the exhaust introduction chamber 60 and the sealing liquid SL in the liquid sealing trap 65 is replenished. . Thereby, the liquid level of the sealing liquid SL immediately recovers to the lower limit liquid level DP or more, and the sealed liquid sealing trap 65 can be immediately returned to the liquid sealing state. Accordingly, it is possible to prevent the outside air from entering the exhaust introduction chamber 60.

In the above-described embodiment, the measurement pipe 93 is a transparent pipe. However, a portion of the wall of the measurement pipe 93 that faces the sealing liquid level sensors 68 and 200 is formed using a transparent material. That is, the pipe wall of the other part of the measurement pipe 93 may be formed using an opaque material.
Moreover, although the optical sensor was employ | adopted as the 1st and 2nd sealing liquid level sensors 68 and 200, a magnetic sensor (proximity switch) can also be used as a sealing liquid level sensor. In this case, a high-frequency oscillation type, a magnetic type, a capacitance type, or the like can be adopted as the magnetic sensor. Further, the sealing liquid level sensors 68 and 200 may directly measure the liquid level of the sealing liquid SL in the drainage pipe 66 instead of the liquid level of the sealing liquid SL in the measurement pipe 93.

Moreover, you may make it detect the liquid quantity of the sealing liquid SL of the liquid sealing trap 65 by methods other than detecting the height of the liquid level of the sealing liquid SL.
In addition, the liquid supply unit that supplies the liquid into the exhaust introduction chamber 60 includes not only the valve cleaning unit 96 and the partition wall cleaning unit 97 but also only one of these cleaning units 96 and 97. Also good.

In addition, hydrofluoric acid is exemplified as the acidic chemical solution supplied by the acidic chemical solution supply unit 5, but the acidic chemical solution supplied by the acidic chemical solution supply unit is not limited to SC2 (hydrochloric acid / hydrogen peroxide mixture). ), BHF (Buffered HF), sulfuric acid, SPM (sulfuric acid / hydrogen peroxide mixture), SPM (sulfuric acid / hydrogen peroxide mixture), hydrofluoric acid (hydrofluoric acid and nitric acid ( Examples thereof include a mixed solution with HNO ₃ ).

Moreover, although SC1 was illustrated as an alkaline chemical | medical solution supplied by the alkaline chemical | medical solution supply unit 6, in addition to this, the alkaline chemical | medical solution supplied by an alkaline chemical | medical-solution supply unit is ammonia water, ammonium fluoride, TMAH (tetramethylammonium hydroxide). ) And the like.
Moreover, although IPA was illustrated as an organic solvent which the organic solvent supply unit 7 supplies, methanol, ethanol, HFE (hydrofluoroether), acetone, etc. can be illustrated as an organic solvent which an organic solvent supply unit supplies. Further, the organic solvent may be a liquid mixed with other components as well as a case where it is composed of only a single component. For example, a mixed solution of IPA and acetone or a mixed solution of IPA and methanol may be used.

In addition, the exhaust gas switching device 2 is not limited to the configuration in which the exhaust destination of the exhaust gas in the exhaust introduction chamber 60 is switched between the three exhaust gas processing devices 45 to 47, and between two or four or more exhaust gas processing devices. It may be one that switches.
Moreover, it is needless to say that the processing gas can be used as the processing fluid without being limited to the case where the substrate processing apparatus 1 processes the substrate W using a plurality of types of processing liquids.

In addition, various design changes can be made within the scope of matters described in the claims.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Exhaust gas switching apparatus 3 Chamber 10 Control apparatus 45 Acid exhaust processing apparatus 46 Alkaline exhaust processing apparatus 47 Solvent exhaust processing apparatus 60 Exhaust introduction chamber 62 1st exhaust outlet piping 63 2nd exhaust outlet piping 64 3rd Exhaust outlet piping 65 Liquid sealing trap 66 Drainage piping 68 First sealing liquid level sensor (measurement liquid level sensor)
69 Bulkhead 79 First exhaust valve 81 Valve body 86 Second exhaust valve 89 Third exhaust valve 90 Drain valve 93 Measuring pipe 94 Bottom 96 Valve cleaning unit 97 Bulkhead cleaning unit 200 Second sealing level sensor DP Lower liquid level SP Reference liquid level W Substrate

Claims (7)

A substrate processing apparatus having a chamber in which a plurality of types of processing fluids are used for processing a substrate, an exhaust introduction chamber into which exhaust from the chamber is introduced, and a destination of exhaust in the exhaust introduction chamber A substrate processing system including an exhaust gas switching device that switches between a plurality of exhaust processing devices,
A drainage pipe for draining the liquid from the inside of the exhaust introduction chamber, and a drainage pipe provided with a liquid-sealed trap filled with the liquid in the middle thereof;
A liquid supply unit for supplying liquid into the exhaust introduction chamber;
A sealing liquid amount sensor for detecting the liquid amount of the sealing liquid of the liquid sealing trap;
When the liquid amount detected by the sealing liquid amount sensor is less than a predetermined amount, in order to supply the liquid to the liquid sealing trap, the liquid supply unit is controlled to supply the liquid into the exhaust introduction chamber. A substrate processing system including a controller for supplying the substrate. In the drainage pipe, a drainage valve that opens and closes the drainage pipe is provided downstream of the liquid trap.
The substrate processing system according to claim 1, wherein the controller closes the drain valve when the liquid amount detected by the sealing liquid amount sensor is less than a predetermined amount. Branching from the liquid ring trap of the drain pipe , further extending above the bottom of the drain pipe, further including a measurement pipe configured to allow the liquid seal of the liquid ring trap to flow,
The substrate processing system according to claim 1, wherein the sealing liquid amount sensor includes a measurement liquid level sensor that detects a liquid level of the sealing liquid in the measurement pipe. The measurement liquid level sensor includes an optical sensor that optically detects the liquid level of the sealing liquid in the measurement pipe from the outside of the pipe wall of the measurement pipe,
The substrate processing system according to claim 3 , wherein at least a portion of the pipe wall of the measurement pipe facing the optical sensor is formed using a transparent material. Provided corresponding to said plurality of exhaust treatment device, the inside of the exhaust of the exhaust introduction chamber further comprises an exhaust gas discharging pipe for deriving the corresponding exhaust treatment device,
Each exhaust outlet pipe is provided with an exhaust valve for opening and closing the exhaust outlet pipe, and the exhaust valve has a valve body,
The liquid supply unit includes a valve cleaning unit for supplying the liquid to the valve body in order to clean the valve body of the exhaust valve, a substrate processing system according to any one of claims 1-4.   The substrate processing system according to claim 1, wherein the liquid supply unit includes a partition cleaning unit that supplies liquid to the partition in order to clean the partition of the exhaust introduction chamber. The sealed liquid amount sensor includes a sealed liquid level sensor that detects a liquid level of the sealed liquid in the liquid trap.
The sealed liquid level sensor is
A first sealed liquid level sensor that detects whether or not a lower limit liquid level corresponding to the predetermined amount of liquid is reached;
7. A second sealed liquid level sensor that detects whether or not the liquid level of the liquid has reached a predetermined reference liquid level higher than the lower limit liquid level. A substrate processing system according to claim 1.

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