TWI836216B - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

The technology disclosed in the specification of this case is a technology for suppressing mixing of chemical liquids during substrate processing using a plurality of chemical liquids. The substrate processing method of the technology disclosed in the specification of this case has the following steps: spraying the first chemical liquid from the first nozzle to the substrate; after spraying the first chemical liquid, sucking the liquid in the first nozzle; and stopping sucking the second chemical liquid. After the liquid in one nozzle is discharged, a second chemical liquid different from the first chemical liquid is sprayed from the second nozzle to the substrate.

Description

Substrate processing method and substrate processing device

The technology disclosed in the description of this case relates to a substrate processing method and a substrate processing device. Substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for flat panel displays (FPD; flat panel displays) such as organic EL (electroluminescence) display devices, substrates for optical disks, and magnetic disks. Substrates, optical disk substrates, photomask glass substrates, ceramic substrates, field emission display (FED; field emission display) substrates, solar cell substrates, etc.

In the past, in the manufacturing process of semiconductor substrates (hereinafter referred to as "substrates"), substrate processing equipment was used to perform various processes on the substrates.

In substrate processing, there may be a case where one or a plurality of chemical liquids are sprayed onto the substrate via a nozzle, but in order to control the drop of liquid from the nozzle, etc., a suction operation is performed to suck the chemical liquid in the nozzle (see, for example, patent documents 1).

[Prior Art Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 2018-56550.

When a plurality of medical solutions are ejected in chronological order, the subsequent medical solution (or the atmosphere of the medical solution) may be attracted during the suction action for attracting the previous medical solution. In this case, particles may be generated due to mixing (mixing contact) between chemical liquids, which may ultimately lead to product defects.

The technology disclosed in the specification of this case was developed in view of the problems described above, and is a technology for suppressing mixing of chemical liquids in substrate processing using a plurality of chemical liquids.

The first aspect of the technology disclosed in the specification of this case is a substrate processing method, which has the following steps: spraying a first chemical liquid from a first nozzle to the substrate; after spraying the first chemical liquid, sucking the first nozzle and after stopping suctioning the liquid in the first nozzle, spraying a second chemical solution different from the first chemical solution from the second nozzle to the substrate.

The second aspect of the technology disclosed in the specification of this case is related to the first aspect, and further includes the following steps: after spraying the first chemical liquid and before spraying the second chemical liquid, spraying and cleaning the aforementioned substrate (rinse) liquid.

The third aspect of the technology disclosed in the specification of this case is related to the second aspect, in which the step of sucking the liquid in the first nozzle is completed before the step of spraying the cleaning liquid.

The fourth aspect of the technology disclosed in the specification of this case is related to the second aspect or the third aspect, wherein the cleaning liquid is ejected from the first nozzle before the step of sucking the liquid in the first nozzle.

The fifth aspect of the technology disclosed in the specification of this case is related to any one of the second to fourth aspects, wherein the aforementioned cleaning liquid is used in the step of sucking the aforementioned liquid in the aforementioned first nozzle. During this period, it is sprayed from the second nozzle.

The sixth aspect of the technology disclosed in the specification of this case is related to any aspect from the second aspect to the fifth aspect, wherein the step of spraying the aforementioned cleaning liquid is performed sequentially in time sequence at both the aforementioned first nozzle and the aforementioned second nozzle.

The seventh aspect of the technology disclosed in the specification of this case is related to any one of the first to sixth aspects, wherein one of the first liquid and the second liquid is an acidic liquid and the other is an alkaline liquid.

The eighth aspect of the technology disclosed in the specification of this case is related to any one of the second to sixth aspects, in which the aforementioned cleaning liquid is water.

The ninth aspect of the technology disclosed in the specification of this case is related to any one of the first to eighth aspects, wherein the aforementioned first nozzle and the aforementioned second nozzle are commonly disposed opposite to the aforementioned substrate. The central part of the ground-disposed baffle plate.

The tenth aspect of the technology disclosed in the specification of this case is related to any one of the first to ninth aspects, in which the aforementioned first nozzle and the aforementioned second nozzle are arranged near each other.

The eleventh aspect of the technology disclosed in the specification of this case is related to any one of the first to tenth aspects, wherein the step of sucking the liquid in the first nozzle is performed above the substrate.

A twelfth aspect of the technology disclosed in the specification of this case is a substrate processing device, which is provided with: a first nozzle that sprays a first chemical liquid to the substrate; and a suction mechanism that attracts the aforementioned first chemical liquid after spraying it. The liquid in the first nozzle; and the second nozzle sprays a second chemical liquid different from the first chemical liquid to the substrate after stopping suction of the liquid in the first nozzle.

According to the first to twelfth aspects of the technology disclosed in the specification of this case, after stopping the suction action of the first liquid medicine through the first nozzle, the second liquid medicine is supplied from the second nozzle. Therefore, the situation of sucking the atmosphere of the second liquid medicine in the first nozzle is suppressed. Therefore, the situation of mixing the first liquid medicine with the second liquid medicine in the first nozzle is fully suppressed.

In addition, the purpose, features, aspects and advantages related to the technology disclosed in the specification can be more clearly understood through the detailed description and accompanying drawings shown below.

1: Substrate processing equipment

5: Self-rotating clamp

8,10,12,13,21,310,312,314,316,400,402: Nozzle

14,15,16,30,38,39,330,332,334,336: supply and attraction agencies

17:hood

17a: Upper end

18: Next door

19:Fan filter unit

20:Exhaust duct

22: Rotating motor

23:Rotation axis

24: Rotating base

25: Clamping member

26,26A: Opposite components

27,27A:Baffle plate

28: Rotation axis

29:Substrate opposite surface

31:Support arm

32: Axis nozzle

33: cover

34: Rotating mechanism

35:Lifting mechanism

36: Inert gas supply source

44: Connecting pipes

45:Drainage piping

46: Liquid medicine piping

47: Cleaning fluid piping

48,49: Suction piping

50,51,52,53,56: valve

54:Adjusting valve

55,57: Suction device

80: Chamber

90:Control Department

91:CPU

92:ROM

93:RAM

94: Memory device

94P: Processing program

95: Bus cable

96:Input part

97: Display unit

98: Ministry of Communications

108,110,112,113,121,320,322,324,326,401,403: Piping

127: Claws

132:Through hole

200,203:Medicine liquid

201,202:Cleaning fluid

300:Nozzle arm

300A:Arm

300B: Shaft

300C: Actuator

302: Support part

A1, A2: axis of rotation

C:Carrier

CR: Center Robot

IR: Index Robot

LP: Loading port

PS: Substrate mounting section

UT, UTa, UTb, UTc: processing unit

W: substrate

[Figure 1] is a top view schematically showing an example of the structure of a substrate processing device in an implementation form.

[Fig. 2] A diagram conceptually showing an example of the configuration of the control unit shown in the example of Fig. 1. [Fig.

[Fig. 3] Fig. 3 is a diagram schematically showing an example of the structure of a processing unit according to the embodiment.

[Fig. 4] is a cross-sectional view schematically showing an example of the structure of the facing member.

[Figure 5] is a bottom view showing an example of opposing components.

[Fig. 6] A diagram schematically showing an example of the structure of the supply and suction mechanism shown in the example of Figs. 3 and 4. [Fig.

[Figure 7] is a schematic diagram used to explain the operation of the substrate processing device, especially the operation of the supply and suction mechanism.

[Figure 8] is a schematic diagram used to explain the operation of the substrate processing device, especially the operation of the supply and suction mechanism.

[Figure 9] is a schematic diagram used to explain the operation of the substrate processing device, especially the operation of the supply and suction mechanism.

[Figure 10] is a schematic diagram used to explain the operation of the substrate processing device, especially the operation of the supply and suction mechanism.

[Figure 11] is a diagram schematically showing an example of the configuration of a processing unit in an implementation form.

[Fig. 12] Fig. 12 is a cross-sectional view schematically showing an example of the structure of the facing member.

[Figure 13] is a bottom view showing an example of opposing components.

[Figure 14] is a diagram schematically showing an example of the configuration of a processing unit in an implementation form.

[Fig. 15] A diagram schematically showing an example of the structure of the supply and suction mechanism shown in the example of Fig. 14. [Fig.

[Figure 16] is a schematic diagram used to explain the operation of the substrate processing device, especially the operation of the supply and suction mechanism.

[Fig. 17] is a schematic diagram for explaining the operation of the substrate processing apparatus, especially the operation of the supply and suction mechanism.

[Fig. 18] is a schematic diagram for explaining the operation of the substrate processing apparatus, especially the operation of the supply and suction mechanism.

[Fig. 19] is a schematic diagram for explaining the operation of the substrate processing apparatus, especially the operation of the supply and suction mechanism.

[Fig. 20] Fig. 20 is a diagram schematically showing an example of the structure of a processing unit according to the embodiment.

[Fig. 21] A diagram schematically showing an example of the structure of the supply and suction mechanism shown in the example of Fig. 20. [Fig.

22 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of supplying the processing liquid from the nozzle.

[Figure 23] is a schematic diagram for explaining the operation of the substrate processing device, especially the operation of supplying the processing liquid from the nozzle.

[Figure 24] is a schematic diagram for explaining the operation of the substrate processing device, especially the operation of supplying the processing liquid from the nozzle.

25 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of supplying the processing liquid from the nozzle.

The following describes the implementation with reference to the attached drawings. Although detailed features are shown in the following implementation for the purpose of illustrating the technology, these detailed features are only for illustration and not all of them are necessary features for realizing the implementation.

In addition, the drawings are schematically shown, and for convenience of explanation, the structures are appropriately omitted or simplified in the drawings. In addition, the relationship between the size and position of the components shown in different drawings is not accurately described and will be changed appropriately. In addition, in order to make it easier to understand the contents of the embodiments, hatching may be added to drawings such as plan views that are not cross-sectional views.

In addition, in the following description, the same components are illustrated with the same component symbols, and the names and functions of these components are considered to be the same. Therefore, in order to avoid duplication, the detailed description of these components may be omitted.

In addition, in the following descriptions, when a certain constituent element is described as "equipped with", "including", or "having", such description does not exclude the existence of other constituent elements unless otherwise specified.

In addition, in the description described below, even when ranking numbers such as "first" or "second" are used, these terms are appropriate terms to be used in order to easily understand the contents of the embodiments, and are not Limited to the order in which these sorted numbers are generated, etc.

In addition, in the following description, even when terms indicating specific positions or directions such as "upper", "lower", "left", "right", "side", "bottom", "front", or "back" are used, these terms are used appropriately to facilitate understanding of the content of the implementation form and have nothing to do with the position or direction in actual implementation.

In addition, in the following description, when it is written as "the upper surface of..." or "the lower surface of...", in addition to the upper surface body or lower surface body of the constituent element being the object, it also includes the state where other constituent elements are formed on the upper surface or lower surface of the constituent element being the object. That is, for example, when it is written as "B disposed on the upper surface of A", it does not interfere with "C" which is another constituent element sandwiched between A and B.

[First Embodiment]

Hereinafter, the substrate processing method and substrate processing apparatus of this embodiment will be described.

[Regarding the structure of the substrate processing device]

FIG. 1 is a plan view schematically showing an example of the structure of the substrate processing apparatus 1 according to the embodiment. The substrate processing apparatus 1 includes a load port LP, an indexer robot IR, a center robot CR, a control unit 90 and at least one processing unit UTa (four processing units UTa in FIG. 1 ).

Each processing unit UTa is used to process a substrate W (wafer). The processing unit UTa is a blade-type device that can be used for substrate processing.

Furthermore, the processing unit UTa can have a chamber 80 . In this case, the atmosphere in the chamber 80 is controlled by the control unit 90, whereby the processing unit UTa can perform substrate processing in a desired atmosphere.

The control unit 90 can control the operation of each component in the substrate processing device 1 (the spin motor 22 of the spin chuck 5 described later, the rotating mechanism 34, the lifting mechanism 35, the supply and suction mechanism 14, the supply and suction mechanism 15, the supply and suction mechanism 16 or the supply and suction mechanism 30, etc.). The carrier C is a container for accommodating the substrate W. In addition, the loading port LP is a container holding mechanism for holding a plurality of carriers C. The index robot IR can transport the substrate W between the loading port LP and the substrate mounting part PS. The center robot CR can transport the substrate W between the substrate mounting part PS and the processing unit UTa.

With the above configuration, the index robot IR, the substrate placement unit PS, and the center robot CR function as a transport mechanism for transporting the substrate W between each processing unit UTa and the load port LP.

The unprocessed substrate W is taken out from the carrier C by the index robot IR. Then, the unprocessed substrate W is transferred to the center robot CR via the substrate placement unit PS.

The center robot CR carries the unprocessed substrate W into the processing unit UTa. Next, the processing unit UTa processes the substrate W.

The substrate W processed in the processing unit UTa is taken out from the processing unit UTa by the central robot CR. Then, the processed substrate W is transferred to the index robot IR through other processing units UTa and the substrate loading unit PS as needed. The index robot IR moves the processed substrate W into the carrier C. The substrate W is processed by the above actions.

FIG. 2 is a diagram schematically showing an example of the structure of the control unit 90 shown in the example of FIG. 1 . The control unit 90 may also be composed of a general computer having electrical circuits. Specifically, the control unit 90 includes a central processing unit (ie, CPU (central processing unit; central processing unit)) 91, a read only memory (ROM; read only memory) 92, and a random access memory (RAM; random access memory) 93, memory device 94, input unit 96, display unit 97, communication unit 98, and a bus line 95 for connecting these components to each other.

ROM92 stores basic programs. The RAM 93 is used as a work area when the CPU 91 performs predetermined processing. The memory device 94 is composed of a non-volatile memory device such as a flash memory or a hard disk device. The input unit 96 is composed of various switches, a touch panel, etc., and receives input setting instructions such as a processing recipe from an operator. The display unit 97 is composed of, for example, a liquid crystal display device, a lamp, etc., and displays various information under the control of the CPU 91 . The communication unit 98 has a data communication function via a local area network (LAN) or the like.

A plurality of modes are preset in the memory device 94, and the plurality of modes are for controlling each component in the substrate processing device 1 of FIG. 1. The CPU 91 executes the processing program 94P, thereby selecting one of the plurality of modes and controlling each component in the mode. In addition, the processing program 94P can also be stored in a recording medium. If this recording medium is used, the processing program 94P can be loaded (installed) into the control unit 90. In addition, part or all of the functions executed by the control unit 90 do not necessarily need to be implemented by software, and can also be implemented by hardware such as a dedicated logic circuit.

FIG. 3 is a diagram schematically showing an example of the structure of the processing unit UTa in this embodiment. The operations of each component in the processing unit UTa are controlled by the control unit 90 . In addition, FIG. 4 is a cross-sectional view schematically showing an example of the structure of the facing member 26A.

The processing unit UTa is equipped with a box-shaped chamber 80 having an internal space, and a rotation jig 5 that holds one substrate W in a horizontal position in the chamber 80 and allows the substrate W to pass through the center of the substrate W. The vertical axis of rotation rotates; the pipe 108 is connected to the nozzle 8, which is used to spray the processing liquid toward the center of the upper surface of the substrate W held by the rotation fixture 5; the pipe 110 is connected to the nozzle 10, which is 10 is used to eject the processing liquid toward the center of the upper surface of the substrate W held by the rotation jig 5; the pipe 112 is connected to the nozzle 12, and the nozzle 12 is directed toward the center of the upper surface of the substrate W held by the rotation jig 5 The processing liquid is ejected; the pipe 113 is connected to the nozzle 13 for ejecting the processing liquid toward the center of the upper surface of the substrate W held by the rotation jig 5; the pipe 121 is connected to the nozzle 21 for The inert gas is sprayed toward the center of the upper surface of the substrate W held by the rotation jig 5; the supply and suction mechanism 14 selectively supplies, for example, an alkaline chemical solution and a cleaning liquid to the pipe 108, and sucks the inside of the nozzle 8 and the chemical liquid and the cleaning liquid in the pipe 108; the supply and suction mechanism 15 selectively supplies, for example, acidic chemical liquid and the cleaning liquid to the pipe 110, and sucks the chemical liquid in the nozzle 10 and the pipe 110 and the cleaning liquid; the supply and suction mechanism 16 supplies an organic solvent such as IPA (isopropyl alcohol; isopropyl alcohol) to the pipe 112 and sucks the organic solvent in the nozzle 12 and the pipe 112; the supply and suction mechanism 30 , for example, a hydrophobizing agent (SMT) is supplied to The pipe 113 sucks the hydrophobizing agent in the nozzle 13 and the pipe 113; the inert gas supply source 36 is used to supply the inert gas to the pipe 121; and the cylindrical cup 17 surrounds the rotation clamp 5 .

The nozzle 8, the nozzle 10, the nozzle 13, the nozzle 12, and the nozzle 21 are arrange|positioned near each other. Here, the term "arranged nearby" includes the case where they are arranged in the same chamber 80 , and particularly the case where a plurality of nozzles are arranged simultaneously above the substrate W held by the rotation jig 5 .

The above-mentioned acidic chemical liquid is, for example, HF (hydrofluoric acid; hydrofluoric acid), dilute hydrofluoric acid (DHF; dilute hydrofluoric acid) in which hydrofluoric acid (HF) has been diluted with pure water, or citric acid; (called citric acid), a mixed solution of sulfuric acid and hydrogen peroxide (SPM; sulfuric acid/hydrogen peroxide mixture; sulfuric acid hydrogen peroxide mixture), etc., the "medical solution" also includes the atmosphere of the medical solution. In addition, the alkaline chemical solution is, for example, a mixture of ammonia and hydrogen peroxide (SC1; Standard clean-1; the first standard cleaning solution, that is, ammonia-hydrogen peroxide mixture) )), dNH ₄ OH, tetramethyl ammonium hydroxide (TMAH; tetramethyl ammonium hydroxide), etc., "medical solution" also includes the atmosphere of the medical solution. In addition, the cleaning liquid system is water, for example. However, in this embodiment, the water is pure water (deionized water (DIW; deionized water)), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, and dilute concentration (for example, 10 ppm or more). to 100 ppm or less) in ammonia water. In addition, "cleaning fluid" also includes the atmosphere of the cleaning fluid.

In addition, in addition to IPA, the organic solvent may be, for example, methanole, ethanol, acetone, EG (ethylene glycol; ethylene glycol), hydrofluoroether, or the like. In addition, the organic solvent does not only consist of a single component, but may also be a liquid mixed with other components. For example, it may be a mixture of IPA and acetone, or a mixture of IPA and methanol. In addition, the hydrophobizing agent may be a silicone-based hydrophobizing agent or a metal-based hydrophobizing agent.

In addition, the number of nozzles shown in the examples of FIG. 3 and FIG. 4 is not limiting, and for example, nozzles for spraying liquid medicine may be further added.

The chamber 80 is provided with: a box-shaped partition wall 18 that accommodates the rotation clamp 5 or a nozzle, etc.; and a fan filter unit (FFU; fan filter unit) 19 that removes clean air filtered by a filter or the like from the partition wall 18 The upper part is transported to the partition wall 18; and the exhaust duct 20 is used to discharge the gas in the chamber 80 from the lower part of the partition wall 18.

The spin clamp 5 is equipped with: a spin motor 22; a spin axis 23 driven by the spin motor 22; and a disk-shaped spin base 24 installed approximately horizontally on the upper end of the spin axis 23. A plurality of clamping members 25 are arranged on the periphery of the upper surface of the spin base 24. The plurality of clamping members 25 are arranged in the circumferential direction of the substrate W at appropriate intervals.

In addition, the rotation clamp 5 is not limited to a clamping type clamp, and may also be a vacuum adsorption type (ie, vacuum clamp) clamp used to vacuum adsorb the back surface of the substrate W.

Furthermore, the processing unit UTa is provided with an opposing member 26A that faces the upper surface of the substrate W held by the rotation jig 5 . FIG. 5 is a bottom view showing an example of the facing member 26A.

The opposing member 26A is provided with the baffle plate 27A and the rotation shaft 28, and is rotatable integrally with the baffle plate 27A. The barrier plate 27A has a disc-shaped structure having a larger diameter than the substrate W. The lower surface of the barrier plate 27A has: a substrate-facing surface 29, which is a circular flat surface and faces the entire upper surface of the substrate W; and an annular claw portion 127, which is formed on the substrate-facing surface. 29 protrudes downward in the peripheral portion. A cylindrical through hole 132 vertically penetrating the barrier plate 27A is formed in the center of the substrate facing surface 29 .

The rotation axis 28 passes through the center of the baffle plate 27A and is rotatable around the rotation axis A2 extending in the vertical direction. In addition, the rotation axis A2 coincides with the rotation axis A1 of the substrate W. axis of rotation 28 is cylindrical. The internal space of the rotating shaft 28 is connected to the through hole 132 of the baffle plate 27A. The rotation shaft 28 is supported by a support arm 31 so as to be relatively rotatable. The support arm 31 extends horizontally above the baffle plate 27A. In this embodiment, the support arm 31 is movable at least in the up and down direction (vertical direction).

An axial nozzle 32 is provided inside the through hole 132, and the axial nozzle 32 extends vertically along the rotation axis A2 of the baffle plate 27A. The nozzles 8, 10, 12, 13, and 21 extending in the vertical direction (vertical direction) are arranged in the casing 33 of the axial nozzle 32. The casing 33 is arranged inside the through hole 132 in a non-contact state with the baffle plate 27A and the rotation axis 28.

The baffle plate 27A is combined with a rotating mechanism 34 including an electric motor, etc. The rotating mechanism 34 causes the baffle plate 27A and the rotating shaft 28 to rotate around the rotating axis A2 relative to the supporting arm 31.

A lifting mechanism 35 including an electric motor or a ball screw is coupled to the support arm 31 . The lifting mechanism 35 raises and lowers the facing member 26A, the nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13, and the nozzle 21 together with the support arm 31 in the vertical direction. The lifting mechanism 35 raises and lowers the baffle plate 27A, the nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13, and the nozzle 21 between the approach position and the retracted position. The approach position is when the substrate-facing surface 29 of the baffle plate 27A approaches the rotating fixture 5 The position of the upper surface of the held substrate W and the retreat position are set above the approach position. The lifting mechanism 35 holds the baffle plate 27A at each position between the approaching position and the retracted position.

When the lifting mechanism 35 lowers the opposing member 26A, the baffle plate 27A and the shaft nozzle 32 are received by a support portion (not shown) in the rotation base 24 . Furthermore, after the support arm 31 side and the rotation shaft 28 side are separated, the barrier plate 27A rotates in synchronization with the rotation of the rotation base 24 .

As shown in the example of FIG. 3 , the cover 17 is arranged outside the substrate W held by the rotating clamp 5. The cover 17 surrounds the rotating base 24. When the processing liquid is supplied to the substrate W while the rotating clamp 5 rotates the substrate W, the processing liquid supplied to the substrate W is thrown around the substrate W. When the processing liquid is supplied to the substrate W, the upper end 17a of the cover 17 opened upward is arranged above the rotating base 24. Therefore, the processing liquid (specifically, a chemical solution, a cleaning solution, an organic solvent, or a hydrophobic agent, etc.) discharged around the substrate W is received by the cover 17. Moreover, the processing liquid received by the cover 17 is transported to a recovery device or a liquid discharge device (not shown here), etc.

[For supply and attraction agencies]

FIG6 schematically shows an example of the configuration of the supply and suction mechanism 14 shown in the examples of FIG3 and FIG4. In addition, the configuration of the supply and suction mechanism 15, the configuration of the supply and suction mechanism 16, and the configuration of the supply and suction mechanism 30 are the same as those shown in the example of FIG6, except for the type of treatment liquid supplied by each mechanism.

As shown in the example of FIG. 6 , the supply and suction mechanism 14 includes a connecting pipe 44 connected to the upstream end of the pipe 108 , a drain pipe 45 further connected to the connecting pipe 44 , and a valve 51 . The liquid drain pipe 45 is provided; the chemical liquid pipe 46 is connected to the upstream side of the connecting pipe 44; the valve 52 is provided to the chemical liquid pipe 46; the cleaning liquid pipe 47 is connected to the upstream side of the connecting pipe 44; the valve 53 , is provided in the cleaning liquid pipe 47; the valve 50 is provided in the pipe 108 downstream of the connecting pipe 44; the suction pipe 48 is branched from the pipe 108 downstream of the valve 50; and the adjustment valve 54 is provided in The suction pipe 48; the suction device 55 is further connected to the suction pipe 48; the suction pipe 49 is further connected to the connecting pipe 44; the valve 56 is provided in the suction pipe 49; and the suction device 57 is further connected to Suction piping 49. The drain pipe 45 is connected to the drain equipment outside the machine. In addition, either the suction device 55 or the suction device 57 may be provided.

The suction device 55 is a siphon type suction device. Here, the so-called siphon type suction device is a device that fills the pipe (suction pipe 48) with liquid and uses the principle of siphon to suck (discharge) the liquid in the pipe 108. Compared with the ejector type suction device such as a vacuum generator or an aspirator, the siphon type suction device can suppress the energy consumption for suction.

The suction device 57 is an aspirator type suction device. Compared with the siphon type suction device, the aspirator type suction device has a stronger suction force (faster suction speed) and can suck a larger amount of liquid.

When the valve 52 and the valve 50 are opened while the other valves are closed, the chemical solution is supplied from the chemical solution pipe 46 to the pipe 108 and the chemical solution is discharged downward from the discharge port of the nozzle 8 .

Furthermore, when the valve 52 and the valve 51 are opened while the other valves are closed, the chemical solution is supplied from the chemical solution pipe 46 to the drain pipe 45 . Thereby, the chemical solution in the chemical solution pipe 46 can be drained (wasted).

Furthermore, when valve 53 and valve 50 are opened while the other valves are closed, cleaning liquid is supplied from valve 53 to pipe 108, and the cleaning liquid is sprayed downward from the spray port of nozzle 8.

Furthermore, when the valve 53 and the valve 51 are opened while the other valves are closed, the cleaning liquid is supplied from the valve 53 to the drain pipe 45 . Thereby, the cleaning liquid in the cleaning liquid pipe 47 can be drained (wasted).

When the adjustment valve 54 is opened in the operating state of the suction device 55, the action of the suction device 55 becomes effective, and the inside of the suction pipe 48 is sucked. Therefore, the treatment liquid (chemical solution or cleaning liquid) contained in the nozzle 8, the pipe 108 and the suction pipe 48 is introduced into the suction pipe 48. In addition, since the suction force of the suction device 55 is weak, the suction speed of the suction device 55 is slow.

In addition, the suction device 57 is set to, for example, a normal operating state. In addition, suction can also be started by valve action. When the valve 56 is opened in the operating state of the suction device 57, the action of the suction device 57 becomes effective, and the inside of the suction piping 49 is sucked. Therefore, the treatment liquid (chemical liquid or cleaning liquid) contained in the suction piping 49, the connecting piping 44, the piping 108, and the nozzle 8 is introduced into the suction piping 49. In addition, since the suction force of the suction device 57 is stronger than that of the suction device 55, the suction speed of the suction device 57 is faster than that of the suction device 55.

[Actions for substrate processing equipment]

Next, the operation of the substrate processing device of this embodiment will be described with reference to Figures 7 to 10. Here, Figures 7, 8, 9, and 10 are schematic diagrams used to illustrate the operation of the substrate processing device, especially the operation of the supply and suction mechanism 14 and the supply and suction mechanism 15.

The substrate processing method of the substrate processing device of this embodiment has the following steps: treating the substrate W transported to the processing unit UTa with a chemical solution; cleaning the substrate W treated with the chemical solution; drying the substrate W treated with the chemical solution; and removing the substrate W treated with the chemical solution from the processing unit UTa. The chemical solution treatment included in the operation of the above-mentioned substrate processing device is described in more detail below.

First, as shown in the example of FIG. 7 , the valve 50 and the valve 52 shown in FIG. 6 are opened under the control of the controller 90 , and the chemical solution 200 is supplied through the pipe 108 . In this way, the chemical solution 200 is ejected onto the substrate W from the ejection port of the nozzle 8 .

Next, as shown in the example of FIG. 8 , the valve 50 and the valve 53 shown in FIG. 6 are opened under the control of the control unit 90 , and the cleaning liquid 201 is supplied through the pipe 108 . In this way, the cleaning liquid 201 is sprayed onto the substrate W from the discharge port of the nozzle 8 . The time for spraying the cleaning liquid 201 is, for example, from 10 seconds to 30 seconds.

Next, as shown in the example of FIG. 9 , the spraying of the cleaning liquid 201 is stopped and the valve 50 and the valve 56 shown in FIG. 6 are opened by the control of the control unit 90, and the liquid or cleaning liquid contained in the suction pipe 49, the connecting pipe 44, the pipe 108 and the nozzle 8 is introduced into the suction pipe 49. At this time, the atmosphere of the liquid 200 and the cleaning liquid 201 in the closed space surrounded by the substrate W and the baffle plate 27A is also introduced into the suction pipe 49 through the nozzle of the nozzle 8 located above the substrate W. The time for performing the suction operation is, for example, more than 10 seconds and less than 30 seconds. In addition, the end of the suction operation can also be, for example, by measuring the suction amount by a sensor or the like and ending at a time point when the suction amount exceeds a critical value. In addition, the adjusting valve 54 may be opened at the same time to introduce the liquid medicine 200 or the cleaning liquid 201 contained in the piping 108 and the nozzle 8 into the suction piping 48.

On the other hand, as shown in the example of FIG. 9 , the corresponding valve is opened under the control of the control unit 90 and the cleaning liquid 202 is supplied through the pipe 110 . In this way, the cleaning liquid 202 is sprayed onto the substrate W from the discharge port of the nozzle 10 . In addition, the cleaning liquid 202 may be the same type of liquid as the cleaning liquid 201 or a different type of liquid. In addition, similarly to the above, the atmosphere of the cleaning liquid 202 in the sealed space surrounded by the substrate W and the baffle plate 27A is introduced into the suction pipe 49 through the discharge port of the nozzle 8 .

Next, as shown in the example of FIG. 10 , after the suction action in the nozzle 8 is stopped, the corresponding valve is opened by the control of the control unit 90, and the chemical solution 203 is supplied through the pipe 110. In this way, the chemical solution 203 is sprayed from the nozzle outlet of the nozzle 10 to the substrate W.

According to the above, since the supply of the chemical solution 203 from the nozzle 10 is started after the suction operation of the chemical solution 200 etc. through the nozzle 8 is stopped, the atmosphere of the chemical solution 203 in the sealed space surrounded by the substrate W and the barrier plate 27A is suppressed from being sucked into Inside the nozzle 8 and inside the pipe 108 . Therefore, the mixing of the chemical solution 200 and the chemical solution 203 in the nozzle 8 and the pipe 108 is sufficiently suppressed.

In addition, by ejecting the cleaning liquid in time sequence from both the nozzle 8 and the nozzle 10 , the cleaning liquid can be ejected before the suction operation in the nozzle 8 and after the suction operation, so that the cleaning liquid can be prevented from remaining on the upper surface of the substrate W. The amount of the chemical liquid 200 is reduced and the upper surface of the substrate W can be cleaned, and a liquid film of the cleaning liquid is further formed on the upper surface of the substrate W, thereby suppressing contamination of the substrate W.

In addition, the cleaning liquid may also be sprayed through other nozzles (such as the nozzle 12 or the nozzle 13) different from the nozzle 8 and the nozzle 10. In this case, although it is necessary to perform the suction operation in each nozzle, it is desirable to start supplying the chemical solution through the nozzle 10 after stopping the suction operation in the other nozzles. 203. The reason for this is that even if the chemical liquid 203 is attracted into the nozzle for spraying the cleaning liquid, mixing of the chemical liquids will still occur when other chemical liquids are sprayed from the nozzle in subsequent steps.

Here, in the substrate processing method of this embodiment, as long as the supply of the chemical solution 203 through the nozzle 10 is started after the suction action in the nozzle 8 is stopped, the supply of the cleaning solution 201 through the nozzle 8 and the supply of the cleaning solution 202 through the nozzle 10 may not be performed. However, by supplying the above-mentioned cleaning solution during the suction action in the nozzle 8, in addition to cleaning the upper surface of the substrate W, the contamination of the substrate W can be suppressed by forming a liquid film of the cleaning solution on the upper surface of the substrate W.

Based on the above, it is desired that the suction operation in the nozzle 8 is completed while the cleaning liquid is being supplied, that is, it is desired that the suction operation in the nozzle 8 be completed before the supply operation of the cleaning liquid.

In addition, either supply of the cleaning liquid 201 through the nozzle 8 or supply of the cleaning liquid 202 through the nozzle 10 may be performed.

In addition, when using a hydrophobizing agent as a chemical solution, since the hydrophobizing agent cannot be mixed with a cleaning solution such as pure water, the hydrophobizing agent as a chemical solution is preliminarily stirred (paddling) on the substrate W while the hydrophobizing agent is being sucked. agent, and at the same time replace the atmosphere on the substrate W with an inert gas (nitrogen (N ₂ )). Then, after the suction of the hydrophobizing agent as the chemical solution is stopped, other chemical solutions are started to be ejected.

[Second Embodiment]

The substrate processing method and substrate processing apparatus according to this embodiment will be described. In addition, in the following description, the same reference numerals are attached to the same components as those described in the embodiments described above, and detailed descriptions are appropriately omitted.

[Regarding the structure of the substrate processing device]

FIG. 11 is a diagram schematically showing an example of the structure of the processing unit UT of this embodiment. The operations of each component in the processing unit UT are controlled by the control unit 90 . In addition, FIG. 12 is a cross-sectional view schematically showing an example of the structure of the facing member 26.

The processing unit UT system includes a chamber 80, a rotation jig 5, a pipe 108, a pipe 110, a pipe 112, a pipe 113, a pipe 121, a supply and suction mechanism 14, a supply and suction mechanism 15, a supply and suction mechanism 16, and a supply and suction mechanism. 30. Inert gas supply source 36 and cover 17 .

In addition, the processing unit UT has an opposing member 26, and the opposing member 26 is opposed to the upper surface of the substrate W held by the rotating fixture 5. FIG. 13 is a bottom view showing an example of the opposing member 26.

The opposing member 26 is provided with the baffle plate 27 and the rotation shaft 28, and is rotatable integrally with the baffle plate 27. The barrier plate 27 has a disk-shaped structure having approximately the same diameter as the substrate W or a diameter larger than the substrate W. The lower surface of the barrier plate 27 has a substrate-facing surface 29 , which is a circular flat surface and faces the entire upper surface of the substrate W. A cylindrical through hole 132 that vertically penetrates the barrier plate 27 is formed in the center of the substrate facing surface 29 .

The rotation axis 28 passes through the center of the baffle plate 27 and can rotate around the rotation axis A2 extending in the lead straight direction. In addition, the rotation axis A2 is consistent with the rotation axis A1 of the substrate W. The rotation axis 28 is cylindrical. The internal space of the rotation axis 28 is connected to the through hole 132 of the baffle plate 27A. The rotation axis 28 is supported by the support arm 31 so as to be relatively rotatable, and the support arm 31 extends horizontally above the baffle plate 27. In this embodiment, the support arm 31 can move at least in the up and down direction (lead straight direction).

A shaft nozzle 32 is provided inside the through hole 132 , and the shaft nozzle 32 extends vertically along the rotation axis A2 of the baffle plate 27 . The nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13, and the nozzle 21 extending in the up-down direction (vertical direction) are arrange|positioned in the cover 33 of the shaft nozzle 32. The cover 33 is disposed inside the through hole 132 in a non-contact state with the barrier plate 27 and the rotation shaft 28 .

The baffle plate 27 is combined with a rotating mechanism 34 including an electric motor, etc. The rotating mechanism 34 causes the baffle plate 27 and the rotating shaft 28 to rotate around the rotating axis A2 relative to the supporting arm 31.

A lifting mechanism 35 including an electric motor, a ball screw, etc. is coupled to the support arm 31 . The lifting mechanism 35 lifts and lowers the facing member 26 , the nozzle 8 , the nozzle 10 , the nozzle 12 , the nozzle 13 , and the nozzle 21 together with the support arm 31 in the vertical direction. The lifting mechanism 35 raises and lowers the baffle plate 27 , the nozzle 8 , the nozzle 10 , the nozzle 12 , the nozzle 13 and the nozzle 21 between the approaching position and the retracted position. The approaching position is when the substrate-facing surface 29 of the baffle plate 27 is close to the rotating fixture 5 The position of the upper surface of the held substrate W and the retreat position are set above the approach position. The lifting mechanism 35 holds the baffle plate 27 at each position between the approaching position and the retracted position.

[Actions for substrate processing equipment]

Next, the operation of the substrate processing apparatus of this embodiment will be described. The substrate processing method of the substrate processing apparatus of this embodiment includes the following steps: performing chemical liquid treatment on the substrate W that has been transported to the processing unit UT; cleaning the substrate W that has been subjected to chemical liquid treatment; The cleaned substrate W is dried; and the dried substrate W is unloaded from the processing unit UT.

The above-mentioned liquid treatment is the same as that shown in the first embodiment. First, valves 50 and 52 shown in FIG. 6 are opened by the control of controller 90, and liquid 200 is supplied through pipe 108 (however, pipe 108 is connected to the opposing member 26). In this way, liquid 200 is sprayed from the nozzle 8 to the substrate W.

Next, the valve 50 and the valve 53 shown in FIG. 6 are opened by the control of the control unit 90, and the cleaning liquid 201 is supplied through the pipe 108. In this way, the cleaning liquid 201 is sprayed from the nozzle 8 to the substrate W.

Next, the valve 50 and the valve 56 shown in FIG. 6 are opened by the control of the control unit 90, and the liquid medicine or cleaning liquid contained in the suction piping 49, the connecting piping 44, the piping 108, and the nozzle 8 are introduced into the suction piping 49. At this time, the atmosphere of the liquid medicine 200 and the cleaning liquid 201 in the closed space surrounded by the substrate W and the baffle plate 27 is also introduced into the suction piping 49 through the nozzle 8. In addition, the adjustment valve 54 can also be opened at the same time to introduce the liquid medicine or cleaning liquid contained in the piping 108 and the nozzle 8 into the suction piping 48.

On the other hand, the corresponding valve is opened by the control of the control unit 90, and the cleaning liquid 202 is supplied through the pipe 110. In this way, the cleaning liquid 202 is sprayed from the nozzle 10 to the substrate W. In addition, similarly to the above, the atmosphere of the cleaning liquid 202 in the closed space surrounded by the substrate W and the baffle plate 27 is introduced into the suction pipe 49 through the nozzle 8.

Next, after the suction operation in the nozzle 8 is stopped, the corresponding valve is opened under the control of the control unit 90 and the chemical solution 203 is supplied through the pipe 110 . In this way, the chemical solution 203 is ejected onto the substrate W from the ejection port of the nozzle 10 .

According to the above, since the supply of the chemical solution 203 from the nozzle 10 starts after the suction action of the chemical solution 200 etc. through the nozzle 8 is stopped, the atmosphere of the chemical solution 203 in the closed space surrounded by the substrate W and the baffle plate 27 is suppressed from being sucked into the nozzle 8 and the piping 108. Therefore, the mixing of the chemical solution 200 and the chemical solution 203 in the nozzle 8 and the piping 108 is fully suppressed.

In addition, in the substrate processing method of this embodiment, as long as the supply of the chemical solution 203 through the nozzle 10 is started after the suction action in the nozzle 8 is stopped, the supply of the cleaning solution 201 through the nozzle 8 and the supply of the cleaning solution 202 through the nozzle 10 may not be performed. However, the supply of the cleaning solution during the suction action in the nozzle 8 can clean the upper surface of the substrate W, and further form a liquid film on the upper surface of the substrate W, thereby suppressing the contamination of the substrate W.

Based on the above, it is expected that the suction operation in the nozzle 8 ends while the cleaning liquid is being supplied, that is, it is expected that the suction operation in the nozzle 8 ends before the supply operation of the cleaning liquid.

In addition, either the cleaning liquid 201 may be supplied through the nozzle 8 or the cleaning liquid 202 may be supplied through the nozzle 10.

[Third implementation form]

The substrate processing method and substrate processing device of the present embodiment are described. In addition, in the following description, the same component symbols are attached to the components that are the same as the components described in the above-described embodiment, and the detailed description is appropriately omitted.

[Regarding the structure of the substrate processing device]

FIG. 14 is a diagram schematically showing an example of the configuration of the processing unit UTb of this embodiment. The operation of each configuration in the processing unit UTb is controlled by the control unit 90.

The processing unit UTb includes a chamber 80, a self-rotating fixture 5, a supply and suction mechanism 14, a supply and suction mechanism 15, a supply and suction mechanism 16, a supply and suction mechanism 30, a supply and suction mechanism 38, a supply and suction mechanism 39, an inert gas supply source 36, and a cover 17.

Furthermore, the processing unit UTb is provided with a facing member 26 facing the upper surface of the substrate W held by the rotation jig 5 .

The opposing member 26 is provided with the baffle plate 27 and the rotation shaft 28, and is rotatable integrally with the baffle plate 27. The lower surface of the barrier plate 27 has a substrate-facing surface 29 , which is a circular flat surface and faces the entire upper surface of the substrate W. A cylindrical through hole 132 that vertically penetrates the barrier plate 27 is formed in the center of the substrate facing surface 29 .

The rotation axis 28 passes through the center of the baffle plate 27 and can rotate around the rotation axis A2 extending in the lead vertical direction. The rotation axis 28 is supported by the support arm 31 so as to be relatively rotatable, and the support arm 31 extends horizontally above the baffle plate 27.

A shaft nozzle 32 is provided inside the through hole 132 , and the shaft nozzle 32 extends vertically along the rotation axis A2 of the baffle plate 27 .

A rotating mechanism 34 including an electric motor or the like is coupled to the baffle plate 27 . The rotation mechanism 34 rotates the baffle plate 27 and the rotation shaft 28 relative to the support arm 31 around the rotation axis A2.

The lifting mechanism 35 lifts the blocking plate 27 between the approach position and the retreat position. The approach position is a position where the substrate-facing surface 29 of the blocking plate 27 approaches the upper surface of the substrate W held by the rotating clamp 5, and the retreat position is a position set above the approach position. In addition, in FIG. 14 , the blocking plate 27 is located at the retreat position described above.

Above the substrate W, the nozzle 400 and the nozzle 402 are arranged to face the upper surface of the substrate W respectively. The supply and suction mechanism 38 selectively supplies, for example, alkaline chemical solution and cleaning liquid to the pipe 401 and the nozzle 400 , and sucks the chemical liquid and the cleaning liquid in the pipe 401 and the nozzle 400 . The supply and suction mechanism 39 selectively supplies, for example, acidic chemical liquid and cleaning liquid to the pipe 403 and the nozzle 402 , and sucks the chemical liquid and the cleaning liquid in the pipe 403 and the nozzle 402 . The nozzle 400 and the nozzle 402 are configured to be swingable between a processing position facing the upper surface of the substrate W (a position where the processing liquid is sprayed onto the substrate W) and a retraction position (a position retracting from above the substrate W).

[For supply and attraction agencies]

FIG. 15 is a diagram schematically showing an example of the structure of the supply and suction mechanism 38 shown in the example of FIG. 14 . In addition, the structure of the supply and suction mechanism 39 is the same as that shown in the example of FIG. 15 except for the type of processing liquid to be supplied.

As shown in the example of FIG. 15 , the supply and suction mechanism 38 includes a connecting pipe 44 connected to the upstream end of the pipe 401 , a drain pipe 45 further connected to the connecting pipe 44 , and a valve 51 . It is provided in the drain pipe 45; the chemical liquid pipe 46 is connected to the upstream side of the connecting pipe 44; and the valve 52 is provided in the chemical liquid pipe 46; the cleaning liquid pipe 47 is connected to the upstream side of the connecting pipe 44; the valve 53 is installed in the cleaning liquid pipe 47; and the valve 50 is installed on the downstream side of the connecting pipe 44. The piping 401; the suction piping 48 is branched from the piping 401 downstream of the valve 50; the adjustment valve 54 is provided in the suction piping 48; the suction device 55 is further connected to the suction piping 48; the suction piping 49 is further connected to the suction piping 48. The valve 56 is connected to the connecting pipe 44; the valve 56 is provided in the suction pipe 49; and the suction device 57 is further connected to the suction pipe 49. In addition, the drain pipe 45 is connected to a drain device outside the machine. In addition, any one of the suction device 55 and the suction device 57 may be provided.

When the valve 52 and the valve 50 are opened while the other valves are closed, the chemical solution is supplied to the pipe 401 from the chemical solution pipe 46 and the chemical solution is discharged downward from the discharge port of the nozzle 400 .

Furthermore, when the valve 52 and the valve 51 are opened while the other valves are closed, the chemical solution is supplied from the chemical solution pipe 46 to the drain pipe 45 . Thereby, the chemical solution in the chemical solution pipe 46 can be drained (wasted).

When the valve 53 and the valve 50 are opened while the other valves are closed, the cleaning liquid is supplied from the valve 53 to the pipe 401 and the cleaning liquid is sprayed downward from the discharge port of the nozzle 400 .

Furthermore, when the valve 53 and the valve 51 are opened while the other valves are closed, the cleaning liquid is supplied from the valve 53 to the drain pipe 45 . Thereby, the cleaning liquid in the cleaning liquid pipe 47 can be drained (wasted).

When the adjustment valve 54 is opened while the suction device 55 is in an operating state, the operation of the suction device 55 becomes effective, and the inside of the suction pipe 48 is suctioned. Therefore, the treatment liquid (chemical liquid or cleaning liquid) contained in the pipe 401 , the nozzle 400 and the suction pipe 48 is introduced into the suction pipe 48 . In addition, since the suction force of the suction device 55 is weak, the suction speed of the suction device 55 is slow.

In addition, the suction device 57 is set to, for example, a normal operating state. In addition, suction can also be started by valve action. When the valve 56 is opened in the operating state of the suction device 57, the action of the suction device 57 becomes effective, and the inside of the suction piping 49 is sucked. Therefore, the treatment liquid (chemical solution or cleaning liquid) contained in the suction piping 49, the connecting piping 44, the piping 401 and the nozzle 400 is introduced into the suction piping 49. In addition, since the suction force of the suction device 57 is stronger than that of the suction device 55, the suction speed of the suction device 57 is faster than that of the suction device 55.

[Actions for substrate processing equipment]

Next, the operation of the substrate processing device of this embodiment will be described with reference to Figures 16 to 19. Here, Figures 16, 17, 18, and 19 are schematic diagrams used to illustrate the operation of the substrate processing device, especially the operation of the supply and suction mechanism 38 and the supply and suction mechanism 39.

The substrate processing method of the substrate processing device of this embodiment comprises the following steps: treating the substrate W transported to the processing unit UTb with a chemical solution; cleaning the substrate W treated with the chemical solution; drying the substrate W treated with the chemical solution; and removing the substrate W treated with the chemical solution from the processing unit UTb.

First, as shown in the example of FIG. 16 , in the above-described chemical solution processing, the valve 50 and the valve 52 shown in FIG. 15 are opened under the control of the controller 90 , and the chemical solution 200 is supplied through the pipe 401 . In this way, the chemical solution 200 is ejected onto the substrate W from the ejection port of the nozzle 400 .

Next, as shown in the example of FIG. 17 , the valve 50 and the valve 53 shown in FIG. 15 are opened under the control of the control unit 90 , and the cleaning liquid 201 is supplied through the pipe 401 . In this way, the cleaning liquid 201 is sprayed onto the substrate W from the discharge port of the nozzle 400 .

Next, as shown in the example of FIG. 18 , the spraying of the cleaning fluid 201 is stopped, and the valve 50 and the valve 56 shown in FIG. 15 are opened under the control of the control unit 90 , and the suction pipe 49 , the connecting pipe 44 , the pipe 401 and the nozzle 400 are connected. The contained chemical liquid or cleaning liquid is introduced into the suction pipe 49 . At this time, the atmosphere of the chemical solution 200 and the cleaning solution 201 in the chamber 80 will also be introduced toward the suction pipe 49 through the discharge port of the nozzle 400 . this Alternatively, the adjustment valve 54 may be opened simultaneously to introduce the chemical solution 200 or cleaning fluid 201 contained in the pipe 401 and the nozzle 400 into the suction pipe 48 .

On the other hand, as shown in the example of FIG. 18 , the corresponding valve is opened by the control of the control unit 90, and the cleaning liquid 202 is supplied through the pipe 403. In this way, the cleaning liquid 202 is sprayed from the nozzle 402 to the substrate W. In addition, similarly to the above, the atmosphere of the cleaning liquid 202 in the chamber 80 is introduced into the suction pipe 49 through the nozzle 400.

Next, as shown in the example of FIG. 19 , after the suction action in the nozzle 400 is stopped, the corresponding valve is opened by the control of the control unit 90, and the chemical solution 203 is supplied through the nozzle 402. In this way, the chemical solution 203 is sprayed from the nozzle outlet of the nozzle 402 to the substrate W.

Here, in the substrate processing method of this embodiment, as long as the supply of the chemical solution 203 through the nozzle 402 is started after the suction action in the nozzle 400 is stopped, the supply of the cleaning solution 201 through the nozzle 400 and the supply of the cleaning solution 202 through the nozzle 402 may not be performed. However, by supplying the above-mentioned cleaning solution during the suction action in the nozzle 400, in addition to cleaning the upper surface of the substrate W, the contamination of the substrate W can be suppressed by forming a liquid film on the upper surface of the substrate W.

In addition, either the cleaning liquid 201 is supplied through the nozzle 400 or the cleaning liquid 202 is supplied through the nozzle 402.

According to the above, since the supply of the chemical solution 203 from the nozzle 402 is started after the suction operation of the chemical solution 200 etc. through the nozzle 400 is stopped, the atmosphere of the chemical solution 203 in the chamber 80 is suppressed from being sucked into the nozzle 400 and the pipe 401 . Therefore, the mixing of the chemical solution 200 and the chemical solution 203 in the nozzle 400 and the pipe 401 is sufficiently suppressed.

[Fourth implementation form]

The substrate processing method and substrate processing apparatus according to this embodiment will be described. In addition, in the following description, the same reference numerals are attached to the same components as those described in the embodiments described above, and detailed descriptions are appropriately omitted.

[Configuration of substrate processing equipment]

FIG. 20 is a diagram schematically showing an example of the configuration of the processing unit UTc of this embodiment. The operation of each configuration in the processing unit UTc is controlled by the control unit 90.

The processing unit UTc is provided with: a chamber 80; a rotation jig 5; a pipe 320 connected to a nozzle 310 for ejecting the processing liquid toward the center of the upper surface of the substrate W held by the rotation jig 5; and a pipe 322. A nozzle 312 is connected to the nozzle 312 for ejecting the processing liquid toward the center of the upper surface of the substrate W held by the rotating fixture 5; a pipe 324 is connected to a nozzle 314 for being held toward the rotating fixture 5 The processing liquid is ejected from the center of the upper surface of the substrate W; the pipe 326 is connected to a nozzle 316, and the nozzle 316 is used to eject the processing liquid toward the center of the upper surface of the substrate W held by the rotation clamp 5; supply and suction mechanism 330 is used to selectively supply alkaline chemical liquid and cleaning liquid to the pipe 320 and suck the chemical liquid and the cleaning liquid in the nozzle 310 and the pipe 320; the supply and suction mechanism 332 is used to For example, acidic chemical liquid and cleaning liquid are selectively supplied to the pipe 322, and the chemical liquid and the cleaning liquid in the nozzle 312 and the pipe 322 are sucked; the supply and suction mechanism 334 is, for example, isopropyl alcohol (IPA). The organic solvent is supplied to the pipe 324, and the organic solvent in the nozzle 314 and the pipe 324 is sucked; the supply and suction mechanism 336 supplies, for example, other chemical liquid to the pipe 326, and sucks the organic solvent in the nozzle 316 and the pipe 326. The organic solvent; the support portion 302 integrally supports the nozzle 310, the nozzle 312, the nozzle 314 and the nozzle 316; the nozzle arm 300 has the support portion 302 installed at the end; and the cover 17.

The nozzle arm 300 includes an arm 300A, a shaft 300B, and an actuator 300C. The actuator 300C adjusts the angle of the shaft 300B around the axis. One end of the arm 300A is fixed to the shaft 300B, and the other end of the arm 300A is arranged to be away from the axis of the shaft 300B. In addition, a support portion 302 is installed at the other end of the arm 300A. In this way, the support portion 302 can be swung in the radial direction of the substrate W between a processing position (a position for spraying a processing liquid onto the substrate W) and a retreat position (a position retreated from above the substrate W). In addition, the movement direction of the support part 302 caused by the swing only needs to have a component in the radial direction of the substrate W, and does not need to be strictly parallel to the radial direction of the substrate W. Here, the nozzle arm 300 can also be raised and lowered in the vertical direction by a motor not shown. In this case, the distance between the support part 302 installed at the end of the nozzle arm 300 and the upper surface of the substrate W can be adjusted by raising and lowering the nozzle arm 300.

Above the substrate W, the nozzles 310, 312, 314, and 316 integrally supported by the support portion 302 are respectively arranged opposite to the upper surface of the substrate W. The supply and suction mechanism 330 selectively supplies, for example, alkaline chemical liquid and cleaning liquid to the piping 320 and the nozzle 310, and suctions the chemical liquid and the cleaning liquid in the piping 320 and the nozzle 310. The supply and suction mechanism 332 selectively supplies, for example, acidic chemical liquid and cleaning liquid to the piping 322 and the nozzle 312, and suctions the chemical liquid and the cleaning liquid in the piping 322 and the nozzle 312.

[For supply and attraction agencies]

FIG. 21 schematically shows an example of the configuration of the supply and suction mechanism 330 shown in the example of FIG. 20 . In addition, the configurations of the supply and suction mechanism 332, the supply and suction mechanism 334, and the supply and suction mechanism 336 are the same as those shown in the example of FIG. 21 except for the type of the treatment liquid supplied.

As shown in the example of FIG. 21 , the supply and suction mechanism 330 includes a connecting pipe 44 connected to the upstream end of the pipe 320 and a drain pipe 45 further connected to the connecting pipe. 44; The valve 51 is provided in the drain pipe 45; the chemical liquid pipe 46 is connected to the upstream side of the connecting pipe 44; the valve 52 is provided in the chemical liquid pipe 46; the cleaning liquid pipe 47 is connected to the connecting pipe 44 the upstream side of The valve 54 is provided in the suction pipe 48; the suction device 55 is further connected to the suction pipe 48; the suction pipe 49 is further connected to the connecting pipe 44; the valve 56 is provided in the suction pipe 49; and the suction device 57 , is further connected to the suction pipe 49. In addition, the drain pipe 45 is connected to a drain device outside the machine. In addition, any one of the suction device 55 and the suction device 57 may be provided.

When the valve 52 and the valve 50 are opened while the other valves are closed, the chemical solution is supplied from the chemical solution pipe 46 to the pipe 320 and the chemical solution is discharged downward from the discharge port of the nozzle 310 .

Furthermore, when the valve 52 and the valve 51 are opened while the other valves are closed, the chemical solution is supplied from the chemical solution pipe 46 to the drain pipe 45 . Thereby, the chemical solution in the chemical solution pipe 46 can be drained (wasted).

Furthermore, when valve 53 and valve 50 are opened while the other valves are closed, cleaning liquid is supplied from valve 53 to pipe 320, and the cleaning liquid is sprayed downward from the spray port of nozzle 310.

Furthermore, when valve 53 and valve 51 are opened while the other valves are closed, cleaning fluid is supplied from valve 53 to the drain pipe 45. In this way, the cleaning fluid in the cleaning fluid pipe 47 can be drained (discarded).

When the adjustment valve 54 is opened in the operating state of the suction device 55, the action of the suction device 55 becomes effective, and the inside of the suction pipe 48 is sucked. Therefore, the treatment liquid (chemical solution or cleaning liquid) contained in the pipe 320, the nozzle 310 and the suction pipe 48 is introduced into the suction pipe 48. In addition, since the suction force of the suction device 55 is weak, the suction speed of the suction device 55 is slow.

In addition, the suction device 57 is set to a normal operation state, for example. In addition, suction can also be started by valve action. When the valve 56 is opened in the actuated state of the suction device 57, the suction device 57 moves The operation system becomes effective, and the inside of the suction pipe 49 is sucked. Therefore, the treatment liquid (chemical liquid or cleaning liquid) contained in the suction pipe 49 , the connecting pipe 44 , the pipe 320 and the nozzle 310 is introduced into the suction pipe 49 . In addition, since the suction force of the suction device 57 is stronger than that of the suction device 55 , the suction speed of the suction device 57 is faster than that of the suction device 55 .

[Actions for substrate processing equipment]

Next, the operation of the substrate processing apparatus of this embodiment will be described with reference to FIGS. 22 to 25 . Here, FIG. 22 , FIG. 23 , FIG. 24 and FIG. 25 are schematic diagrams for explaining the operation of the substrate processing apparatus, especially the operation of supplying the processing liquid from the nozzle 310 and the nozzle 312 .

The substrate processing method of the substrate processing apparatus of this embodiment includes the following steps: performing chemical liquid treatment on the substrate W that has been transported to the processing unit UTc; performing a cleaning process on the substrate W that has been subjected to chemical liquid treatment; The cleaned substrate W is dried; and the dried substrate W is unloaded from the processing unit UTc.

First, as shown in the example of FIG. 22 , in the above-described chemical solution processing, the valve 50 and the valve 52 shown in FIG. 21 are opened under the control of the controller 90 , and the chemical solution 200 is supplied through the pipe 320 . In this way, the chemical solution 200 is ejected onto the substrate W from the ejection port of the nozzle 310 .

Next, as shown in the example of FIG. 23 , the valve 50 and the valve 53 shown in FIG. 21 are opened by the control of the control unit 90, and the cleaning liquid 201 is supplied through the pipe 320. In this way, the cleaning liquid 201 is sprayed from the nozzle 310 to the substrate W.

Next, as shown in the example of FIG. 24 , the spraying of the cleaning fluid 201 is stopped, and the valve 50 and the valve 56 shown in FIG. 21 are opened under the control of the control unit 90 , and the suction pipe 49 , the connecting pipe 44 , the pipe 320 and the nozzle 310 are connected. The contained chemical liquid or cleaning liquid is introduced into the suction pipe 49 . At this time, the atmosphere of the chemical solution 200 and the cleaning solution 201 in the chamber 80 will also be introduced toward the suction pipe 49 through the discharge port of the nozzle 310 . this Alternatively, the adjustment valve 54 may be opened simultaneously to introduce the chemical solution 200 or the cleaning fluid 201 contained in the pipe 320 and the nozzle 310 into the suction pipe 48 .

On the other hand, as shown in the example of FIG. 24 , the corresponding valve is opened under the control of the control unit 90 and the cleaning liquid 202 is supplied through the pipe 322 . In this way, the cleaning liquid 202 is sprayed onto the substrate W from the discharge port of the nozzle 312 . In addition, similarly to the above, the atmosphere of the cleaning liquid 202 in the chamber 80 is introduced into the suction pipe 49 through the discharge port of the nozzle 310 .

Next, as shown in the example of FIG. 25 , after the suction operation in the nozzle 310 is stopped, the corresponding valve is opened under the control of the control unit 90 , and the chemical solution 203 is supplied through the nozzle 312 . In this way, the chemical solution 203 is ejected onto the substrate W from the ejection port of the nozzle 312 .

Here, in the substrate processing method of this embodiment, as long as the supply of the chemical solution 203 through the nozzle 312 is started after the suction action in the nozzle 310 is stopped, the supply of the cleaning solution 201 through the nozzle 310 and the supply of the cleaning solution 202 through the nozzle 312 may not be performed. However, by supplying the above-mentioned cleaning solution during the suction action in the nozzle 310, in addition to cleaning the upper surface of the substrate W, the contamination of the substrate W can be suppressed by forming a liquid film on the upper surface of the substrate W.

In addition, either the cleaning liquid 201 may be supplied through the nozzle 310 or the cleaning liquid 202 may be supplied through the nozzle 312.

According to the above, since the supply of the chemical solution 203 from the nozzle 312 located near the nozzle 310 is stopped after the suction operation of the chemical solution 200 etc. through the nozzle 310 is stopped, the atmosphere of the chemical solution 203 in the chamber 80 is suppressed from being sucked into the nozzle 310 And inside the piping 320. Therefore, the mixing of the chemical solution 200 and the chemical solution 203 in the nozzle 310 and the pipe 320 is sufficiently suppressed.

[Regarding the effects produced by the implementation form described above]

Next, examples of effects produced by the above-described embodiment will be shown. In addition, in the following description, although the effect is described based on the specific configuration shown in the example of the embodiment described above, the same effect as shown in the example of the present invention can also be achieved within the scope of producing the same effect. Other concrete constitutive substitutions.

In addition, the replacement may also span multiple implementation forms. That is, it is also possible to combine the various structures shown in the examples in different implementation forms to produce the same effect.

According to the above-described embodiment, in the substrate processing method, the first chemical liquid is ejected from the first nozzle to the substrate W. Here, the first nozzle corresponds to, for example, any one of the nozzle 8, the nozzle 310, and the nozzle 400 (hereinafter, for convenience of explanation, one of these nozzles may be described in a corresponding manner). In addition, the first chemical solution corresponds to, for example, the medical solution 200 or the like. Then, after the chemical solution 200 is ejected, the liquid in the nozzle 8 (for example, the chemical solution 200 or the cleaning liquid 201, etc.) is sucked. Then, after the suction of the liquid in the nozzle 8 is stopped, a second chemical solution different from the chemical solution 200 is ejected from the second nozzle to the substrate W. Here, the second nozzle corresponds to, for example, any one of the nozzle 10, the nozzle 312, and the nozzle 402 (hereinafter, for convenience of explanation, one of these nozzles may be described in a corresponding manner). In addition, the second chemical solution corresponds to the chemical solution 203 and the like, for example.

According to this configuration, after the suction operation of sucking the chemical solution 200 etc. through the nozzle 8 is stopped, the supply of the chemical solution 203 from the nozzle 10 is started. Therefore, the atmosphere that suppresses the chemical solution 203 is attracted into the nozzle 8 . Therefore, the mixing of the chemical liquid 200 and the chemical liquid 203 in the nozzle 8 is sufficiently suppressed. As a result, it is no longer necessary to arrange the nozzles separately from each other in order to avoid mixing and contact of the chemical liquids ejected between the plurality of nozzles. In other words, the degree of freedom in nozzle arrangement increases.

In addition, when the above-mentioned configuration is appropriately added with other configurations shown in the examples of the present invention description, that is, when other configurations in the present invention specification that are not described in the above-mentioned configurations are appropriately added, it is also possible. can produce the same effect.

In addition, the order in which various processes are performed can be changed without particular limitation.

Furthermore, according to the embodiment described above, in the substrate processing method, the cleaning liquid 201 or the cleaning liquid 202 is sprayed onto the substrate W after the chemical liquid 200 is sprayed and before the chemical liquid 203 is sprayed. According to this structure, by supplying the cleaning liquid 201 or the cleaning liquid 202 while the suction operation of the nozzle 8 is being performed, in addition to cleaning the upper surface of the substrate W, the upper surface of the substrate W can also be cleaned. The liquid film of the liquid is used to suppress contamination of the substrate W.

In addition, according to the above-described implementation form, the step for sucking the liquid in the nozzle 8 is completed before the step for ejecting the cleaning liquid 201 or the cleaning liquid 202. According to this structure, the step for sucking the liquid in the nozzle 8 can be completed during the period when a liquid film of the cleaning liquid is formed on the upper surface of the substrate W. Therefore, the contamination of the substrate W can be suppressed.

In addition, according to the embodiment described above, the cleaning liquid 201 is sprayed from the nozzle 8 before the step of sucking the liquid in the nozzle 8 . According to this configuration, the remaining chemical solution 200 can be sucked out after cleaning the upper surface of the substrate W and the inside of the nozzle 8, so that the amount of the remaining chemical solution 200 can be reduced.

Furthermore, according to the above-described embodiment, during the step of sucking the liquid in the nozzle 8, the cleaning liquid 202 is ejected from the nozzle 10. According to this configuration, by supplying the cleaning liquid 202 through the nozzle 10 during the suction operation in the nozzle 8, in addition to cleaning the upper surface of the substrate W, the contamination of the substrate W can be suppressed by forming a liquid film of the cleaning liquid on the upper surface of the substrate W.

In addition, according to the above-described embodiment, the steps for ejecting the cleaning liquid are performed in both the nozzle 8 and the nozzle 10 in chronological order. According to this structure, since the cleaning liquid can be ejected before and during the suction operation in the nozzle 8, the amount of the remaining chemical solution 200 can be reduced, the upper surface of the substrate W can be cleaned, and further the upper surface of the substrate W can be cleaned. A liquid film of cleaning liquid is formed on the upper surface of W, whereby contamination of the substrate W can be suppressed.

In addition, according to the embodiment described above, one of the chemical solution 200 and the chemical solution 203 is an acidic liquid and the other is an alkaline liquid. According to this structure, mixing (mixing contact) between chemical liquids for which mixing contact is prohibited can be suppressed.

In addition, according to the above-described implementation form, the cleaning liquid 201 or the cleaning liquid 202 is water (DIW). According to this structure, the inside of the nozzle and the upper surface of the substrate W can be effectively cleaned.

In addition, according to the above-described embodiment, the nozzle 8 and the nozzle 10 are commonly disposed at the center of the baffle plate 27 (or baffle plate 27A) disposed opposite to the substrate W. According to this configuration, although it becomes easy to attract the atmosphere of the chemical solution 200 in the (closed) space between the substrate W and the baffle plate 27 (or baffle plate 27A) through the nozzle outlet of the nozzle 8 and further attract the atmosphere of the chemical solution 203, since the chemical solution 203 is supplied from the nozzle 10 after the suction action of the chemical solution 200 through the nozzle 8 is stopped, the atmosphere of the chemical solution 203 is suppressed from being attracted into the nozzle 8.

In addition, according to the embodiment described above, the nozzle 8 and the nozzle 10 (or the nozzle 310 and the nozzle 312) are arranged near each other. According to this configuration, it becomes easier to suck the atmosphere of the chemical solution 200 through the discharge port of the nozzle 8 and further suck the atmosphere of the chemical solution 203 ejected from the nearby nozzle 10. However, since the suction of the chemical solution 200 through the nozzle 8 is stopped, After the suction operation, the supply of the chemical solution 203 from the nozzle 10 is started. Therefore, the atmosphere that suppresses the chemical solution 203 from being sucked into the nozzle 8 is suppressed.

In addition, according to the above-described implementation form, the substrate processing device is provided with a nozzle 8, a supply and suction mechanism 14, and a nozzle 10. The nozzle 8 sprays the chemical solution 200 onto the substrate W. The supply and suction mechanism 14 sucks the liquid in the nozzle 8 after spraying the chemical solution 200. The nozzle 10 sprays a chemical solution 203 different from the chemical solution 200 onto the substrate W after stopping suction of the liquid in the nozzle 8.

According to this structure, after the suction action of the drug solution 200 through the nozzle 8 is stopped, the drug solution 203 is supplied from the nozzle 10. Therefore, the atmosphere of the drug solution 203 is suppressed from being sucked into the nozzle 8. Therefore, the mixing of the drug solution 200 and the drug solution 203 in the nozzle 8 is fully suppressed. As a result, it is no longer necessary to separate the nozzles from each other in advance to avoid mixing and contacting of the drug solutions sprayed from multiple nozzles. That is, the freedom of nozzle configuration is improved.

In addition, when the above-mentioned configuration is appropriately added with other configurations shown in the examples of the present invention description, that is, when other configurations in the present invention specification that are not described in the above-mentioned configurations are appropriately added, it is also possible. can produce the same effect.

[Examples of changes to the implementation forms described above]

Although the above-described embodiments may describe the size, shape, relative arrangement relationship, or implementation conditions of each component, all of these embodiments are merely examples and are not limiting. matters.

Therefore, numerous variations and equivalents of the examples not shown are assumed within the scope of the technology disclosed in the specification of the present invention. Examples include the following: when at least one component is changed; when at least one component is added or omitted; when at least one component in at least one embodiment is extracted and combined with components in another embodiment .

In addition, when the name of a material is not specified in the embodiment described above, as long as there is no contradiction, it also includes the case where the material contains other additives, for example, the material contains an alloy, etc. .

In addition, as long as no contradiction arises, the above-described implementation form may state that there is "one" constituent element, or it may state that there is "more than one".

In addition, each component in the embodiment described above is a conceptual unit, and within the scope of the technology disclosed in the description of the present invention, the case where one component is composed of a plurality of structures is included. ; A situation in which one component corresponds to a part of a structure; a situation in which a structure has multiple components.

In addition, as long as the same function is performed, each component in the above-described implementation form may also include structures with other structures or shapes.

5: Rotating fixture

8,10: Nozzle

14,15: Supply and attraction agencies

24: Rotating base

25: Clamping member

26A: Opposite member

27A:Baffle plate

28: Rotation axis

108,110:Piping

127:Claw

203:Medicinal liquid

W: substrate

Claims (12)

A substrate processing method comprises the following steps: spraying a first chemical liquid onto a substrate from a first nozzle; sucking the liquid in the first nozzle after spraying the first chemical liquid; spraying a second chemical liquid different from the first chemical liquid onto the substrate from a second nozzle after stopping sucking the liquid in the first nozzle; and spraying a cleaning liquid onto the substrate after spraying the first chemical liquid and before spraying the second chemical liquid; in the step of spraying the cleaning liquid, the first nozzle and the second nozzle spray the cleaning liquid onto the substrate in sequence in time. A substrate processing method includes the following steps in a substrate processing apparatus having a barrier plate arranged to face the substrate and having a first nozzle and a second nozzle in common at the center of the barrier plate: starting from the first nozzle Spray the first chemical liquid onto the substrate; after spraying the first chemical liquid, suck the liquid in the first nozzle; and after stopping sucking the liquid in the first nozzle, start spraying the substrate from the second nozzle. a second chemical liquid that is different from the first chemical liquid; and after spraying the first chemical liquid and before spraying the second chemical liquid, spraying the cleaning liquid on the substrate; in order to attract the aforementioned liquid in the first nozzle In the liquid step, the atmosphere of the second chemical liquid that is attracted to the closed space surrounded by the substrate and the barrier plate is suppressed. A substrate processing method as described in claim 1 or 2, wherein the cleaning liquid is ejected from the second nozzle during the step of sucking the liquid in the first nozzle. The substrate processing method according to claim 1 or 2, wherein the step of sucking the liquid in the first nozzle ends before the step of spraying the cleaning liquid. The substrate processing method according to claim 1 or 2, wherein the cleaning liquid is sprayed from the first nozzle before the step of sucking the liquid in the first nozzle. A substrate processing method as described in claim 1 or 2, wherein one of the first chemical solution and the second chemical solution is an acidic liquid and the other is an alkaline liquid. The substrate processing method described in claim 1 or 2, wherein the cleaning liquid is water. A substrate processing method as described in claim 1 or 2, wherein the first nozzle and the second nozzle are arranged near each other. The substrate processing method according to claim 1 or 2, wherein the step of sucking the liquid in the first nozzle is performed above the substrate. A substrate processing device comprises: a first nozzle for spraying a first chemical liquid or a cleaning liquid onto a substrate; a suction mechanism for sucking the liquid in the first nozzle after spraying the first chemical liquid; and a second nozzle for spraying a second chemical liquid or a cleaning liquid different from the first chemical liquid onto the substrate after stopping sucking the liquid in the first nozzle; after the first nozzle sprays the first chemical liquid and before the second nozzle sprays the second chemical liquid, the first nozzle and the second nozzle spray the cleaning liquid onto the substrate in sequence in time. A substrate processing device comprises: a first nozzle for spraying a first chemical liquid or a cleaning liquid onto a substrate; a second nozzle for spraying a second chemical liquid or a cleaning liquid different from the first chemical liquid onto the substrate; a baffle plate for arranging the first nozzle and the second nozzle in the center in a manner opposite to the substrate to form a closed space surrounding the substrate; a suction mechanism for sucking the liquid in the first nozzle after the first nozzle sprays the first chemical liquid; and a control unit, which controls the actions of the first nozzle, the second nozzle, the baffle plate and the suction mechanism; the control unit controls the first nozzle and the second nozzle in the following manner: after the suction mechanism stops sucking the liquid in the first nozzle, the second liquid chemical starts to be sprayed from the second nozzle to the substrate; and after the first nozzle sprays the first liquid chemical and before the second nozzle sprays the second liquid chemical, the cleaning liquid is sprayed to the substrate. The substrate processing device as described in claim 10 or 11, wherein the second nozzle sprays the cleaning liquid while the suction mechanism is sucking the liquid in the first nozzle.

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