JP2021190559A - Board processing method and board processing device - Google Patents

Abstract

To provide a technique for suppressing mixing between chemicals in board processing using a plurality of chemicals.SOLUTION: A board processing method according to the technique disclosed in the present specification includes a step of ejecting a first chemical solution from a first nozzle onto a board, a step of sucking a liquid in the first nozzle after the first chemical solution is discharged, and a step of discharging a second chemical solution different from the first chemical solution from a second nozzle to the board after the suction of the liquid in the first nozzle is stopped.SELECTED DRAWING: Figure 10

Description

The techniques disclosed in the present specification relate to a substrate processing method and a substrate processing apparatus. The substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal displays, flat panel display (FPD) substrates such as organic EL (field emission) display devices, optical disk substrates, magnetic disk substrates, and optomagnetic disks. It includes a substrate for a photomask, a glass substrate for a photomask, a ceramic substrate, a substrate for a field emission display (that is, FED), a substrate for a solar cell, and the like.

Conventionally, in the manufacturing process of a semiconductor substrate (hereinafter, simply referred to as “substrate”), various treatments have been performed on the substrate by using a substrate processing apparatus.

In the substrate processing, one or more chemicals are discharged to the substrate through the nozzles, but in order to suppress dripping from the nozzles, a suction operation for sucking the chemicals in the nozzle may be performed. (See, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2018-56550

When a plurality of chemical solutions are sequentially discharged in a time-sequential manner, the subsequent chemical solution (or its atmosphere) may be sucked in the suction operation for sucking the previous chemical solution. In such a case, there is a problem that particles may be generated by mixing (touching) between the chemicals, which eventually leads to a product defect.

The technique disclosed in the present specification has been made in view of the above-mentioned problems, and is a technique for suppressing mixing between chemicals in a substrate treatment using a plurality of chemicals.

A first aspect of the technique disclosed in the present specification relates to a substrate processing method, which comprises a step of ejecting a first chemical solution from a first nozzle onto a substrate, and after the first chemical solution is ejected. After the step of sucking the liquid in the first nozzle and the suction of the liquid in the first nozzle are stopped, a second nozzle different from the first chemical solution is applied to the substrate from the second nozzle. It is provided with a step of discharging a chemical solution.

A second aspect of the technique disclosed herein relates to the first aspect, said the substrate after the first chemical has been ejected and before the second chemical has been ejected. Further includes a step of discharging the rinse liquid.

A third aspect of the technique disclosed herein relates to a second aspect, wherein the step of sucking the liquid in the first nozzle ends prior to the step of discharging the rinse liquid. do.

A fourth aspect of the technique disclosed herein relates to a second or third aspect, wherein the rinse solution is the first before the step of sucking the liquid in the first nozzle. It is discharged from the nozzle of.

A fifth aspect of the technique disclosed herein relates to any one of the second to fourth aspects, wherein the rinsing solution is a step of sucking the liquid in the first nozzle. In the meantime, it is discharged from the second nozzle.

A sixth aspect of the technique disclosed herein relates to any one of the second to fifth aspects, wherein the step of discharging the rinse liquid is the first nozzle and the second aspect. It is done in chronological order on both nozzles.

A seventh aspect of the technique disclosed herein relates to any one of the first to sixth embodiments, wherein the first and second chemicals are acidic liquids. The other is an alkaline liquid.

Eighth aspect of the technique disclosed herein relates to any one of the second to sixth aspects, wherein the rinsing solution is water.

A ninth aspect of the technique disclosed herein relates to any one of the first to eighth aspects, wherein the first nozzle and the second nozzle face the substrate. It is commonly provided in the central part of the shield plate to be arranged.

A tenth aspect of the technique disclosed herein relates to any one of the first to nine aspects, wherein the first nozzle and the second nozzle are located in close proximity to each other. Nozzle.

The eleventh aspect of the technique disclosed herein relates to any one of the first to ten aspects, wherein the step of sucking the liquid in the first nozzle is above the substrate. Will be done.

A twelfth aspect of the technique disclosed herein relates to a substrate processing apparatus, the first nozzle for ejecting a first chemical solution onto a substrate, and the first nozzle after the first chemical solution is ejected. A suction mechanism for sucking the liquid in the nozzle 1 and a second chemical liquid different from the first chemical liquid are discharged to the substrate after the suction of the liquid in the first nozzle is stopped. Equipped with a nozzle.

According to the first to twelfth aspects of the technique disclosed in the present specification, after the suction operation of the first chemical solution through the first nozzle is stopped, the second chemical solution from the second nozzle is stopped. Supply will start. Therefore, the atmosphere of the second chemical solution is suppressed from being sucked into the first nozzle. Therefore, it is sufficiently suppressed that the first chemical solution and the second chemical solution are mixed in the first nozzle.

Also, the objectives, features, aspects and advantages associated with the art disclosed herein will be further clarified by the detailed description and accompanying drawings set forth below.

It is a top view which shows typically the example of the structure of the substrate processing apparatus which concerns on embodiment. It is a figure which conceptually shows the example of the structure of the control part which example was shown in FIG. It is a figure which shows typically the example of the structure of the processing unit which concerns on embodiment. It is sectional drawing which shows typically the example of the structure of the facing member. It is a bottom view which shows the example of the facing member. 3 is a diagram schematically showing an example of the configuration of the supply and suction mechanism shown in FIGS. 3 and 4. It is a schematic diagram for demonstrating the operation of the supply and suction mechanisms among the operations of a substrate processing apparatus. It is a schematic diagram for demonstrating the operation of the supply and suction mechanisms among the operations of a substrate processing apparatus. It is a schematic diagram for demonstrating the operation of the supply and suction mechanisms among the operations of a substrate processing apparatus. It is a schematic diagram for demonstrating the operation of the supply and suction mechanisms among the operations of a substrate processing apparatus. It is a figure which shows typically the example of the structure of the processing unit which concerns on embodiment. It is sectional drawing which shows typically the example of the structure of the facing member. It is a bottom view which shows the example of the facing member. It is a figure which shows typically the example of the structure of the processing unit which concerns on embodiment. FIG. 14 is a diagram schematically showing an example of a configuration of a supply and suction mechanism shown in FIG. 14 as an example. It is a schematic diagram for demonstrating the operation of the supply and suction mechanisms among the operations of a substrate processing apparatus. It is a schematic diagram for demonstrating the operation of the supply and suction mechanisms among the operations of a substrate processing apparatus. It is a schematic diagram for demonstrating the operation of the supply and suction mechanisms among the operations of a substrate processing apparatus. It is a schematic diagram for demonstrating the operation of the supply and suction mechanisms among the operations of a substrate processing apparatus. It is a figure which shows typically the example of the structure of the processing unit which concerns on embodiment. FIG. 20 is a diagram schematically showing an example of a configuration of a supply and suction mechanism shown in FIG. 20. It is a schematic diagram for demonstrating the operation of the substrate processing apparatus, in particular, the operation of supplying a processing liquid from a nozzle. It is a schematic diagram for demonstrating the operation of the substrate processing apparatus, in particular, the operation of supplying a processing liquid from a nozzle. It is a schematic diagram for demonstrating the operation of the substrate processing apparatus, in particular, the operation of supplying a processing liquid from a nozzle. It is a schematic diagram for demonstrating the operation of the substrate processing apparatus, in particular, the operation of supplying a processing liquid from a nozzle.

Hereinafter, embodiments will be described with reference to the attached drawings. In the following embodiments, detailed features and the like are also shown for the purpose of explaining the technique, but they are examples, and not all of them are necessarily essential features in order for the embodiments to be feasible.

It should be noted that the drawings are shown schematically, and for convenience of explanation, the configuration is omitted or the configuration is simplified in the drawings as appropriate. Further, the interrelationship between the sizes and positions of the configurations and the like shown in different drawings is not always accurately described and can be changed as appropriate. Further, even in a drawing such as a plan view which is not a cross-sectional view, hatching may be added to facilitate understanding of the contents of the embodiment.

Further, in the description shown below, similar components are illustrated with the same reference numerals, and their names and functions are the same. Therefore, detailed description of them may be omitted to avoid duplication.

Further, in the description described below, when it is described that a certain component is "equipped", "included", or "has", the existence of another component is excluded unless otherwise specified. Not an expression.

Also, even if ordinal numbers such as "first" or "second" may be used in the description described below, these terms facilitate the understanding of the content of the embodiments. It is used for convenience, and is not limited to the order that can be generated by these ordinal numbers.

Also, in the description described below, it means a specific position or direction such as "top", "bottom", "left", "right", "side", "bottom", "front" or "back". Although terms may be used, these terms are used for convenience to facilitate understanding of the content of the embodiments, and are the positions or directions when they are actually implemented. It doesn't matter.

Further, in the description described below, when "the upper surface of ..." or "the lower surface of ..." is described, in addition to the upper surface itself or the lower surface itself of the target component, the upper surface of the target component. Alternatively, it shall include a state in which other components are formed on the lower surface. That is, for example, when the description "B provided on the upper surface of the instep" is described, it does not prevent another component "丙" from intervening between the instep and the second.

<First Embodiment>
Hereinafter, a substrate processing method and a substrate processing apparatus according to the present embodiment will be described.

<About the configuration of the board processing device>
FIG. 1 is a plan view schematically showing an example of the configuration of the substrate processing apparatus 1 according to the present embodiment. The substrate processing device 1 includes a load port LP, an indexer robot IR, a center robot CR, a control unit 90, and at least one processing unit UTa (four processing units in FIG. 1).

Each processing unit UTa is for processing the substrate W (wafer). The processing unit UTa is a single-wafer type device that can be used for substrate processing.

The processing unit UTa can have a chamber 80. In that case, by controlling the atmosphere in the chamber 80 by the control unit 90, the processing unit UTa can perform substrate processing in a desired atmosphere.

The control unit 90 has each configuration in the substrate processing device 1 (spin motor 22 of spin chuck 5 described later, rotation mechanism 34, elevating mechanism 35, supply and suction mechanism 14, supply and suction mechanism 15, supply and suction mechanism 16, Alternatively, the operation of the supply and suction mechanism 30 and the like can be controlled. The carrier C is an accommodating container for accommodating the substrate W. Further, the load port LP is a container holding mechanism for holding a plurality of carriers C. The indexer robot IR can convey the substrate W between the load port LP and the substrate mounting portion PS. The center robot CR can convey the substrate W between the substrate mounting portion PS and the processing unit UTa.

With the above configuration, the indexer robot IR, the substrate mounting portion PS, and the center robot CR function as a transport mechanism for transporting the substrate W between the respective processing units UTa and the load port LP.

The unprocessed substrate W is taken out from the carrier C by the indexer robot IR. Then, the unprocessed substrate W is delivered to the center robot CR via the substrate mounting portion PS.

The center robot CR carries the unprocessed substrate W into the processing unit UTa. Then, the processing unit UTa processes the substrate W.

The substrate W processed in the processing unit UTa is taken out from the processing unit UTa by the center robot CR. Then, the processed substrate W is passed to the indexer robot IR via the substrate mounting portion PS after passing through another processing unit UTa as needed. The indexer robot IR carries the processed substrate W into the carrier C. As a result, the processing for the substrate W is performed.

FIG. 2 is a diagram conceptually showing an example of the configuration of the control unit 90 whose example is shown in FIG. The control unit 90 may be configured by a general computer having an electric circuit. Specifically, the control unit 90 includes a central processing unit (CPU) 91, a read-only memory (ie, ROM) 92, and a random access memory (ie, RAM). ) 93, a storage device 94, an input unit 96, a display unit 97, a communication unit 98, and a bus line 95 that connects them to each other.

The ROM 92 stores the basic program. The RAM 93 is used as a work area when the CPU 91 performs a predetermined process. The storage device 94 is composed of a non-volatile storage device such as a flash memory or a hard disk device. The input unit 96 is composed of various switches, a touch panel, or the like, and receives input setting instructions such as processing recipes from the operator. The display unit 97 is composed of, for example, a liquid crystal display device, a lamp, or the like, and displays various information under the control of the CPU 91. The communication unit 98 has a data communication function via a local area network (LAN) or the like.

The storage device 94 is preset with a plurality of modes for controlling the respective configurations of the board processing device 1 of FIG. 1. When the CPU 91 executes the processing program 94P, one of the above-mentioned plurality of modes is selected, and each configuration is controlled in the mode. The processing program 94P may be stored in the recording medium. By using this recording medium, the processing program 94P can be installed in the control unit 90. Further, a part or all of the functions executed by the control unit 90 do not necessarily have to be realized by software, and may be realized by hardware such as a dedicated logic circuit.

FIG. 3 is a diagram schematically showing an example of the configuration of the processing unit UTa according to the present embodiment. The operation of each configuration in the processing unit UTa is controlled by the control unit 90. Further, FIG. 4 is a cross-sectional view schematically showing an example of the configuration of the facing member 26A.

The processing unit UTa holds the box-shaped chamber 80 having an internal space and one substrate W in a horizontal posture in the chamber 80, and holds the substrate W around a vertical rotation axis passing through the central portion of the substrate W. It is held by the spin chuck 5 and the pipe 108 to which the rotating spin chuck 5 and the nozzle 8 for discharging the processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 are connected. The treatment liquid is discharged toward the center of the upper surface of the substrate W held by the spin chuck 5 and the pipe 110 to which the nozzle 10 for discharging the treatment liquid is connected toward the center of the upper surface of the substrate W. The pipe 112 to which the nozzle 12 for the purpose is connected, the pipe 113 to which the nozzle 13 for discharging the processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected, and the spin chuck 5 For example, alkaline chemicals and rinses are selectively supplied to the pipe 121 connected to the nozzle 21 for supplying the inert gas toward the center of the upper surface of the substrate W held in the pipe 108. , And the supply and suction mechanism 14 for sucking the chemical solution and the rinse liquid in the nozzle 8 and the pipe 108, and for example, the acidic chemical liquid and the rinse liquid are selectively supplied to the pipe 110, and the nozzle. A supply and suction mechanism 15 for sucking the chemical solution and the rinse solution in the 10 and the pipe 110, and an organic solvent such as IPA (isopropyl alcohol) are supplied to the pipe 112, and the nozzle 12 and the pipe A supply and suction mechanism 16 for sucking the organic solvent in 112, a hydrophobic agent (SMT) is supplied to the pipe 113, and the hydrophobic agent in the nozzle 13 and the pipe 113 is sucked. A supply and suction mechanism 30 for supplying the inert gas, an inert gas supply source 36 for supplying the inert gas to the pipe 121, and a tubular cup 17 surrounding the spin chuck 5 are provided.

The nozzle 8, nozzle 10, nozzle 13, nozzle 12, and nozzle 21 are arranged close to each other. Here, "arranged in the vicinity" includes being arranged in the same chamber 80 with each other, and particularly means that a plurality of nozzles are simultaneously arranged above the substrate W held by the spin chuck 5. And.

The above acidic chemicals are, for example, HF, dilute hydrofluoric acid (DHF) obtained by diluting hydrofluoric acid (HF) with pure water, citric acid (citric acid), and a mixed solution of sulfuric acid and hydrogen peroxide solution (SPM). And so on, the "chemical solution" shall include the atmosphere. The alkaline chemical solution is, for example, a mixed solution of ammonia and hydrogen peroxide solution (SC1), dNH ₄ OH, tetramethylammonium hydroxide (TMAH), etc., and the “chemical solution” includes the atmosphere thereof. The rinse solution is, for example, water, but in the present embodiment, the water is pure water (deionized water), carbonated water, electrolytic ionized water, hydrogen water, ozone water, and diluted concentration (for example, 10 ppm). Above, and 100 ppm or less), any of the ammonia water. In addition, the "rinse solution" shall include the atmosphere.

In addition to IPA, the organic solvent may be, for example, methanol, ethanol, acetone, EG (ethylene glycol), or (hydrofluoroether). Further, the organic solvent may be a liquid mixed with other components as well as a case where it is composed of only a single component. For example, it may be a mixed solution of IPA and acetone, or it may be a mixed solution of IPA and methanol. Further, the hydrophobic agent may be a silicon-based hydrophobic agent or a metal-based hydrophobic agent.

The number of nozzles whose examples are shown in FIGS. 3 and 4 is not limited, and for example, a nozzle for ejecting a further chemical solution may be added.

The chamber 80 includes a box-shaped partition wall 18 accommodating a spin chuck 5 or a nozzle, an FFU 19 that sends clean air filtered by a filter or the like from the upper portion of the partition wall 18 into the partition wall 18, and a chamber 80 from the lower portion of the partition wall 18. It is provided with an exhaust duct 20 for discharging the gas of the above.

The spin chuck 5 includes a spin motor 22, a spin shaft 23 driven by the spin motor 22, and a disk-shaped spin base 24 attached substantially horizontally to the upper end of the spin shaft 23. A plurality of sandwiching members 25 are arranged on the peripheral edge of the upper surface of the spin base 24. The plurality of sandwiching members 25 are arranged at appropriate intervals in the circumferential direction of the substrate W.

The spin chuck 5 is not limited to the pinch type, and may be, for example, a vacuum suction type (that is, a vacuum chuck) that vacuum sucks the back surface of the substrate W.

Further, the processing unit UTa includes an opposing member 26A facing the upper surface of the substrate W held by the spin chuck 5. FIG. 5 is a bottom view showing an example of the facing member 26A.

The facing member 26A includes a blocking plate 27A and a rotating shaft 28 that can rotate integrally with the blocking plate 27A. The cutoff plate 27A has a disk-like structure having a diameter larger than that of the substrate W. The blocking plate 27A has a substrate facing surface 29 formed of a circular flat surface facing the entire upper surface of the substrate W on the lower surface thereof, and an annular claw portion 127 protruding downward at the peripheral edge portion of the substrate facing surface 29. .. A cylindrical through hole 132 that vertically penetrates the blocking plate 27A is formed in the central portion of the substrate facing surface 29.

The rotating shaft 28 can rotate around the rotating axis A2 extending in the vertical direction through the center of the blocking plate 27A. The rotation axis A2 coincides with the rotation axis A1 of the substrate W. The rotating shaft 28 has a cylindrical shape. The internal space of the rotating shaft 28 communicates with the through hole 132 of the blocking plate 27A. The rotating shaft 28 is relatively rotatably supported by a support arm 31 extending horizontally above the blocking plate 27A. In the present embodiment, the support arm 31 can move at least in the vertical direction (vertical direction).

Inside the through hole 132, a shaft nozzle 32 extending vertically along the rotation axis A2 of the blocking plate 27A is provided. A nozzle 8, a nozzle 10, a nozzle 12, a nozzle 13 and a nozzle 21 extending in the vertical direction (vertical direction) are arranged in the casing 33 of the shaft nozzle 32. The casing 33 is arranged inside the through hole 132 in a non-contact state with the blocking plate 27A and the rotating shaft 28.

A rotation mechanism 34 including an electric motor and the like is coupled to the cutoff plate 27A. The rotation mechanism 34 rotates the cutoff plate 27A and the rotation shaft 28 around the rotation axis A2 with respect to the support arm 31.

An elevating mechanism 35 including an electric motor, a ball screw, or the like is coupled to the support arm 31. The elevating mechanism 35 elevates the facing member 26A, the nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13 and the nozzle 21 in the vertical direction together with the support arm 31. The elevating mechanism 35 is provided between a proximity position where the substrate facing surface 29 of the barrier plate 27A is close to the upper surface of the substrate W held by the spin chuck 5 and a retracting position provided above the proximity position. 27A, nozzle 8, nozzle 10, nozzle 12, nozzle 13 and nozzle 21 are moved up and down. The elevating mechanism 35 holds the blocking plate 27A at each position between the proximity position and the retracted position.

When the elevating mechanism 35 lowers the facing member 26A, the blocking plate 27A and the shaft nozzle 32 are received by a support portion (not shown) on the spin base 24. Then, after the support arm 31 side and the rotation shaft 28 side are separated, the cutoff plate 27A rotates in synchronization with the rotation of the spin base 24.

As an example is shown in FIG. 3, the cup 17 is arranged outside the substrate W held by the spin chuck 5. The cup 17 surrounds the spin base 24. When the processing liquid is supplied to the substrate W while the spin chuck 5 is rotating the substrate W, the processing liquid supplied to the substrate W is shaken off around the substrate W. When the treatment liquid is supplied to the substrate W, the upper end portion 17a of the cup 17 opened upward is arranged above the spin base 24. Therefore, the treatment liquid (specifically, a chemical liquid, a rinsing liquid, an organic solvent, a hydrophobic agent, etc.) discharged around the substrate W is received by the cup 17. Then, the processing liquid received in the cup 17 is sent to a collection device, a drainage device (not shown here), or the like.

<Supply and suction mechanism>
FIG. 6 is a diagram schematically showing an example of the configuration of the supply and suction mechanism 14 shown in FIGS. 3 and 4. Examples of the configuration of the supply and suction mechanism 15, the configuration of the supply and suction mechanism 16, and the configuration of the supply and suction mechanism 30 are shown in FIG. 6 except for the type of the treatment liquid supplied by each mechanism. Similar to the configuration.

As shown in FIG. 6, the supply and suction mechanism 14 includes a connection pipe 44 connected to the upstream end of the pipe 108, a liquid drain pipe 45 further connected to the connection pipe 44, and a liquid drain. A valve 51 provided in the pipe 45, a chemical liquid pipe 46 connected to the upstream side of the connecting pipe 44, a valve 52 provided in the chemical liquid pipe 46, and a rinse liquid pipe 47 connected to the upstream side of the connecting pipe 44. The valve 53 provided in the rinse liquid pipe 47, the valve 50 provided in the pipe 108 on the downstream side of the connection pipe 44, the suction pipe 48 branched from the pipe 108 on the downstream side of the valve 50, and suction. The adjustment valve 54 provided in the pipe 48, the suction device 55 further connected to the suction pipe 48, the suction pipe 49 further connected to the connection pipe 44, the valve 56 provided in the suction pipe 49, and the suction pipe. A suction device 57 further connected to the 49 is provided. The drainage pipe 45 is connected to a drainage facility outside the machine. Further, the suction device 55 and the suction device 57 may be provided in either case.

The suction device 55 is a siphon type suction device. Here, the siphon type suction device means a device that fills the inside of a pipe (suction pipe 48) with a liquid and sucks (drains) the liquid in the pipe 108 by using the principle of siphon. According to the siphon type suction device, energy consumption for suction can be suppressed as compared with an ejector type suction device such as a vacuum generator or an aspirator.

The suction device 57 is an ejector type suction device. The ejector type suction device has a stronger suction force (faster suction speed) and a larger flow rate of liquid that can be sucked than the siphon type suction device.

When the valve 52 and the valve 50 are opened with the other valves closed, the chemical liquid is supplied to the pipe 108 from the chemical liquid pipe 46, and the chemical liquid is discharged downward from the discharge port of the nozzle 8.

Further, when the valve 52 and the valve 51 are opened with the other valves closed, the chemical liquid is supplied from the chemical liquid pipe 46 to the drainage pipe 45. As a result, the chemical solution in the chemical solution pipe 46 can be drained (discarded).

When the valve 53 and the valve 50 are opened with the other valves closed, the rinse liquid is supplied to the pipe 108 from the valve 53, and the rinse liquid is discharged downward from the discharge port of the nozzle 8. ..

Further, when the valve 53 and the valve 51 are opened with the other valves closed, the rinse liquid is supplied from the valve 53 to the drainage pipe 45. As a result, the rinse liquid in the rinse liquid pipe 47 can be drained (discarded).

When the adjustment valve 54 is opened in the operating state of the suction device 55, the function of the suction device 55 becomes effective and the inside of the suction pipe 48 is sucked. Therefore, the treatment liquid (chemical solution or rinse liquid) contained in the nozzle 8, the pipe 108, and the suction pipe 48 is drawn into the suction pipe 48. Since the suction force of the suction device 55 is relatively weak, the suction speed is relatively slow.

Further, the suction device 57 is, for example, always in an operating state. In addition, suction may be started by valve operation. When the valve 56 is opened in the operating state of the suction device 57, the function of the suction device 57 becomes effective and the inside of the suction pipe 49 is sucked. Therefore, the treatment liquid (chemical solution or rinse liquid) contained in the suction pipe 49, the connection pipe 44, the pipe 108, and the nozzle 8 is drawn into the suction pipe 49. Since the suction force of the suction device 57 is stronger than that of the suction device 55, the suction speed is faster than that of the suction device 55.

<About the operation of the board processing device>
Next, the operation of the substrate processing apparatus according to the present embodiment will be described with reference to FIGS. 7 to 10. Here, FIGS. 7, 8, 9 and 10 are schematic views for explaining the operations of the supply and suction mechanism 14 and the supply and suction mechanism 15 among the operations of the substrate processing apparatus.

The substrate processing method by the substrate processing apparatus according to the present embodiment includes a step of performing a chemical solution treatment on the substrate W conveyed to the processing unit UTa, a step of performing a chemical solution treatment on the substrate W on which the chemical solution treatment has been performed, and a cleaning process. It includes a step of performing a drying process on the treated substrate W and a step of carrying out the dried substrate W from the processing unit UTa. Hereinafter, the chemical liquid treatment included in the operation of the substrate processing apparatus will be described in more detail.

First, as shown in FIG. 7, the valve 50 and the valve 52 shown in FIG. 6 are opened under the control of the control unit 90, and the chemical solution 200 is supplied via the pipe 108. Then, the chemical solution 200 is discharged from the discharge port of the nozzle 8 to the substrate W.

Next, as shown in FIG. 8, the valve 50 and the valve 53 shown in FIG. 6 are opened under the control of the control unit 90, and the rinse liquid 201 is supplied through the pipe 108. Then, the rinse liquid 201 is discharged from the discharge port of the nozzle 8 to the substrate W. The time for discharging the rinse liquid 201 is, for example, 10 seconds or more and 30 seconds or less.

Next, as shown in FIG. 9, the discharge of the rinse liquid 201 is stopped, and the valve 50 and the valve 56 shown in FIG. 6 are opened under the control of the control unit 90 to connect the suction pipe 49. The chemical solution or rinse solution contained in the pipe 44, the pipe 108 and the nozzle 8 is drawn into the suction pipe 49. At this time, the atmosphere of the chemical solution 200 and the rinsing solution 201 in the closed space surrounded by the substrate W and the blocking plate 27A may also be drawn into the suction pipe 49 through the discharge port of the nozzle 8 located above the substrate W. .. The time for which the suction operation is performed is, for example, 10 seconds or more and 30 seconds or less. The suction operation may be terminated, for example, by measuring the suction amount with a sensor or the like and ending when the suction amount exceeds the threshold value. Further, by opening the adjusting valve 54 together, the chemical liquid 200 or the rinsing liquid 201 contained in the pipe 108 and the nozzle 8 may be drawn into the suction pipe 48.

On the other hand, as shown in FIG. 9, the corresponding valve is opened under the control of the control unit 90, and the rinse liquid 202 is supplied via the pipe 110. Then, the rinse liquid 202 is discharged from the discharge port of the nozzle 10 to the substrate W. The rinsing liquid 202 may be the same type of liquid as the rinsing liquid 201, or may be a different type of liquid. Further, the atmosphere of the rinsing liquid 202 in the closed space surrounded by the substrate W and the blocking plate 27A can be drawn into the suction pipe 49 through the discharge port of the nozzle 8 in the same manner as described above.

Next, after the suction operation in the nozzle 8 is stopped, as shown in FIG. 10, the corresponding valve is opened under the control of the control unit 90, and the chemical solution 203 is supplied via the pipe 110. Then, the chemical solution 203 is discharged from the discharge port of the nozzle 10 to the substrate W.

According to the above, since the supply of the chemical solution 203 from the nozzle 10 is started after the suction operation of the chemical solution 200 or the like via the nozzle 8 is stopped, the substrate W and the blocking plate are formed in the nozzle 8 and the pipe 108. The atmosphere of the chemical solution 203 in the closed space surrounded by 27A is suppressed from being sucked. Therefore, it is sufficiently suppressed that the chemical solution 200 and the chemical solution 203 are mixed in the nozzle 8 and the pipe 108.

Further, since the rinsing liquid is discharged in both the nozzle 8 and the nozzle 10 in order of time, the rinsing liquid can be discharged before and during the suction operation of the nozzle 8, so that the substrate W can be discharged. While reducing the amount of the chemical solution 200 remaining on the upper surface, the upper surface of the substrate W is washed, and further, the rinse liquid film is formed on the upper surface of the substrate W, so that the contamination of the substrate W can be suppressed.

The rinse liquid may be discharged by another nozzle (for example, nozzle 12 or nozzle 13) different from the nozzle 8 and the nozzle 10. In that case, it is necessary to perform the suction operation on each nozzle, but it is desirable that the supply of the chemical solution 203 via the nozzle 10 is started after the suction operation on the other nozzles is also stopped. This is because even if the chemical solution 203 is sucked into the nozzle for discharging the rinse solution, if another chemical solution is ejected from the nozzle in a later step, the chemical solution is mixed.

Here, in the substrate processing method according to the present embodiment, if the supply of the chemical liquid 203 via the nozzle 10 is started after the suction operation in the nozzle 8 is stopped, the supply of the rinse liquid 201 via the nozzle 8 and the supply of the rinse liquid 201 via the nozzle 8 are started. The supply of the rinse liquid 202 via the nozzle 10 does not have to be performed together. However, by supplying the rinse liquid while the suction operation of the nozzle 8 is being performed, a liquid film of the rinse liquid is formed on the upper surface of the substrate W in addition to cleaning the upper surface of the substrate W. As a result, contamination of the substrate W can be suppressed.

From the above, it is desirable that the suction operation in the nozzle 8 ends while the rinsing liquid is being supplied, that is, the suction operation in the nozzle 8 ends before the rinsing liquid supply operation.

Further, either one of the supply of the rinse liquid 201 via the nozzle 8 and the supply of the rinse liquid 202 via the nozzle 10 may be performed.

Further, when the hydrophobic agent is used as the chemical solution, the hydrophobic agent cannot be mixed with a rinsing solution such as pure water, so that the hydrophobic agent is paddled on the substrate W while the hydrophobic agent as the chemical solution is sucked. At the same time, the atmosphere on the substrate W is replaced with the _{inert gas (N 2).} Then, after the suction of the hydrophobic agent as a chemical solution is stopped, the discharge of another chemical solution is started.

<Second embodiment>
A substrate processing method and a substrate processing apparatus according to the present embodiment will be described. In the following description, components similar to those described in the above-described embodiments will be illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate. ..

<About the configuration of the board processing device>
FIG. 11 is a diagram schematically showing an example of the configuration of the processing unit UT according to the present embodiment. The operation of each configuration in the processing unit UT is controlled by the control unit 90. Further, FIG. 12 is a cross-sectional view schematically showing an example of the configuration of the facing member 26.

The processing unit UT includes a chamber 80, a spin chuck 5, a pipe 108, a pipe 110, a pipe 112, a pipe 113, a pipe 121, a supply and suction mechanism 14, a supply and suction mechanism 15, and a supply and suction mechanism. It includes a suction mechanism 16, a supply and suction mechanism 30, an inert gas supply source 36, and a cup 17.

Further, the processing unit UT includes an opposing member 26 facing the upper surface of the substrate W held by the spin chuck 5. FIG. 13 is a bottom view showing an example of the facing member 26.

The facing member 26 includes a blocking plate 27 and a rotating shaft 28 that can rotate integrally with the blocking plate 27. The cutoff plate 27 has a disk-like structure having a diameter substantially the same as or larger than that of the substrate W. The cutoff plate 27 has a substrate facing surface 29 formed of a circular flat surface facing the entire upper surface of the substrate W on the lower surface thereof. A cylindrical through hole 132 that vertically penetrates the blocking plate 27 is formed in the central portion of the substrate facing surface 29.

The rotating shaft 28 can rotate around the rotating axis A2 extending in the vertical direction through the center of the blocking plate 27. The rotation axis A2 coincides with the rotation axis A1 of the substrate W. The rotating shaft 28 has a cylindrical shape. The internal space of the rotating shaft 28 communicates with the through hole 132 of the blocking plate 27. The rotating shaft 28 is relatively rotatably supported by a support arm 31 extending horizontally above the blocking plate 27. In the present embodiment, the support arm 31 can move at least in the vertical direction (vertical direction).

Inside the through hole 132, a shaft nozzle 32 extending vertically along the rotation axis A2 of the blocking plate 27 is provided. A nozzle 8, a nozzle 10, a nozzle 12, a nozzle 13 and a nozzle 21 extending in the vertical direction (vertical direction) are arranged in the casing 33 of the shaft nozzle 32. The casing 33 is arranged inside the through hole 132 in a non-contact state with the blocking plate 27 and the rotating shaft 28.

A rotation mechanism 34 including an electric motor and the like is coupled to the cutoff plate 27. The rotation mechanism 34 rotates the cutoff plate 27 and the rotation shaft 28 around the rotation axis A2 with respect to the support arm 31.

An elevating mechanism 35 including an electric motor, a ball screw, or the like is coupled to the support arm 31. The elevating mechanism 35 elevates the facing member 26, the nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13 and the nozzle 21 in the vertical direction together with the support arm 31. The elevating mechanism 35 has a blocking plate between a proximity position where the substrate facing surface 29 of the blocking plate 27 is close to the upper surface of the substrate W held by the spin chuck 5 and a retracting position provided above the proximity position. 27, nozzle 8, nozzle 10, nozzle 12, nozzle 13 and nozzle 21 are moved up and down. The elevating mechanism 35 holds the blocking plate 27 at each position between the proximity position and the retracted position.

<About the operation of the board processing device>
Next, the operation of the substrate processing apparatus according to the present embodiment will be described. The substrate processing method by the substrate processing apparatus according to the present embodiment includes a step of performing a chemical solution treatment on the substrate W conveyed to the processing unit UT, a step of performing a chemical solution treatment on the substrate W on which the chemical solution treatment has been performed, and a cleaning process. A step of performing a drying process on the treated substrate W and a step of carrying out the dried substrate W from the processing unit UT are provided.

In the chemical treatment of the above, as in the case shown in the first embodiment, first, the valve 50 and the valve 52 shown in FIG. 6 are opened under the control of the control unit 90, and the pipe 108 is connected. The chemical solution 200 is supplied via the pipe (however, the pipe 108 is connected to the facing member 26). Then, the chemical solution 200 is discharged from the discharge port of the nozzle 8 to the substrate W.

Next, the valve 50 and the valve 53 shown in FIG. 6 are opened under the control of the control unit 90, and the rinse liquid 201 is supplied via the pipe 108. Then, the rinse liquid 201 is discharged from the discharge port of the nozzle 8 to the substrate W.

Next, the valve 50 and the valve 56 shown in FIG. 6 are opened under the control of the control unit 90, and the chemical solution or the rinsing solution contained in the suction pipe 49, the connection pipe 44, the pipe 108 and the nozzle 8 is sucked into the suction pipe 49. Pull in. At this time, the atmosphere of the chemical liquid 200 and the rinsing liquid 201 in the space surrounded by the substrate W and the blocking plate 27 may also be drawn into the suction pipe 49 through the discharge port of the nozzle 8. By opening the adjusting valve 54 together, the chemical solution or the rinsing solution contained in the pipe 108 and the nozzle 8 may be drawn into the suction pipe 48.

On the other hand, the corresponding valve is opened under the control of the control unit 90, and the rinse liquid 202 is supplied via the pipe 110. Then, the rinse liquid 202 is discharged from the discharge port of the nozzle 10 to the substrate W. The atmosphere of the rinsing liquid 202 in the space surrounded by the substrate W and the blocking plate 27 can be drawn into the suction pipe 49 through the discharge port of the nozzle 8 in the same manner as described above.

Next, after the suction operation in the nozzle 8 is stopped, the corresponding valve is opened under the control of the control unit 90, and the chemical solution 203 is supplied via the pipe 110. Then, the chemical solution 203 is discharged from the discharge port of the nozzle 10 to the substrate W.

According to the above, since the supply of the chemical solution 203 from the nozzle 10 is started after the suction operation of the chemical solution 200 or the like via the nozzle 8 is stopped, the substrate W and the blocking plate are formed in the nozzle 8 and the pipe 108. It is suppressed that the atmosphere of the chemical solution 203 in the space surrounded by 27 is sucked. Therefore, it is sufficiently suppressed that the chemical solution 200 and the chemical solution 203 are mixed in the nozzle 8 and the pipe 108.

Here, in the substrate processing method according to the present embodiment, if the supply of the chemical liquid 203 via the nozzle 10 is started after the suction operation in the nozzle 8 is stopped, the supply of the rinse liquid 201 via the nozzle 8 and the supply of the rinse liquid 201 via the nozzle 8 are started. The supply of the rinse liquid 202 via the nozzle 10 does not have to be performed together. However, by supplying the above-mentioned rinse liquid while the suction operation of the nozzle 8 is being performed, in addition to cleaning the upper surface of the substrate W, a liquid film is formed on the upper surface of the substrate W to form the substrate. Contamination of W can be suppressed.

From the above, it is desirable that the suction operation in the nozzle 8 ends while the rinsing liquid is being supplied, that is, the suction operation in the nozzle 8 ends before the rinsing liquid supply operation.

Further, either one of the supply of the rinse liquid 201 via the nozzle 8 and the supply of the rinse liquid 202 via the nozzle 10 may be performed.

<Third embodiment>
A substrate processing method and a substrate processing apparatus according to the present embodiment will be described. In the following description, components similar to those described in the above-described embodiments will be illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate. ..

<About the configuration of the board processing device>
FIG. 14 is a diagram schematically showing an example of the configuration of the processing unit UTb according to the present embodiment. The operation of each configuration in the processing unit UTb is controlled by the control unit 90.

The processing unit UTb includes a chamber 80, a spin chuck 5, a supply and suction mechanism 14, a supply and suction mechanism 15, a supply and suction mechanism 16, a supply and suction mechanism 30, and a supply and suction mechanism 38. A suction mechanism 39, an inert gas supply source 36, and a cup 17 are provided.

Further, the processing unit UTb includes an opposing member 26 facing the upper surface of the substrate W held by the spin chuck 5.

The facing member 26 includes a blocking plate 27 and a rotating shaft 28 that can rotate integrally with the blocking plate 27. The cutoff plate 27 has a substrate facing surface 29 formed of a circular flat surface facing the entire upper surface of the substrate W on the lower surface thereof. A cylindrical through hole 132 that vertically penetrates the blocking plate 27 is formed in the central portion of the substrate facing surface 29.

The rotating shaft 28 can rotate around the rotating axis A2 extending in the vertical direction through the center of the blocking plate 27. The rotating shaft 28 is relatively rotatably supported by a support arm 31 extending horizontally above the blocking plate 27.

Inside the through hole 132, a shaft nozzle 32 extending vertically along the rotation axis A2 of the blocking plate 27 is provided.

A rotation mechanism 34 including an electric motor and the like is coupled to the cutoff plate 27. The rotation mechanism 34 rotates the cutoff plate 27 and the rotation shaft 28 around the rotation axis A2 with respect to the support arm 31.

The elevating mechanism 35 is provided between a close position where the substrate facing surface 29 of the cutoff plate 27 is close to the upper surface of the substrate W held by the spin chuck 5 and a retracted position provided above the close position. 27 is moved up and down. In FIG. 14, the blocking plate 27 is located at the retracted position among the above.

A nozzle 400 and a nozzle 402 are arranged above the substrate W so as to face the upper surface of the substrate W, respectively. The supply and suction mechanism 38 selectively supplies, for example, an alkaline chemical solution and a rinse solution to the pipe 401 and the nozzle 400, and sucks the chemical solution and the rinse solution in the pipe 401 and the nozzle 400. The supply and suction mechanism 39 selectively supplies, for example, an acidic chemical solution and a rinse solution to the pipe 403 and the nozzle 402, and sucks the chemical solution and the rinse solution in the pipe 403 and the nozzle 402. The nozzle 400 and the nozzle 402 can swing between the processing position facing the upper surface of the substrate W (the position where the processing liquid is discharged to the substrate W) and the retracting position (the position where the processing liquid is retracted from above the substrate W). It is composed of.

<Supply and suction mechanism>
FIG. 15 is a diagram schematically showing an example of the configuration of the supply and suction mechanism 38 whose example is shown in FIG. The configuration of the supply and suction mechanism 39 is the same as the configuration shown in FIG. 15 except for the type of the processing liquid to be supplied.

As shown in FIG. 15, the supply and suction mechanism 38 includes a connection pipe 44 connected to the upstream end of the pipe 401, a liquid drain pipe 45 further connected to the connection pipe 44, and a liquid drain. A valve 51 provided in the pipe 45, a chemical liquid pipe 46 connected to the upstream side of the connecting pipe 44, a valve 52 provided in the chemical liquid pipe 46, and a rinse liquid pipe 47 connected to the upstream side of the connecting pipe 44. The valve 53 provided in the rinse liquid pipe 47, the valve 50 provided in the pipe 401 downstream of the connection pipe 44, the suction pipe 48 branching from the pipe 401 downstream of the valve 50, and suction. The adjustment valve 54 provided in the pipe 48, the suction device 55 further connected to the suction pipe 48, the suction pipe 49 further connected to the connection pipe 44, the valve 56 provided in the suction pipe 49, and the suction pipe. A suction device 57 further connected to the 49 is provided. The drainage pipe 45 is connected to a drainage facility outside the machine. Further, the suction device 55 and the suction device 57 may be provided in either case.

When the valve 52 and the valve 50 are opened with the other valves closed, the chemical liquid is supplied to the pipe 401 from the chemical liquid pipe 46, and the chemical liquid is discharged downward from the discharge port of the nozzle 400.

Further, when the valve 52 and the valve 51 are opened with the other valves closed, the chemical liquid is supplied from the chemical liquid pipe 46 to the drainage pipe 45. As a result, the chemical solution in the chemical solution pipe 46 can be drained (discarded).

When the valve 53 and the valve 50 are opened with the other valves closed, the rinse liquid is supplied from the valve 53 to the pipe 401, and the rinse liquid is discharged downward from the discharge port of the nozzle 400. ..

Further, when the valve 53 and the valve 51 are opened with the other valves closed, the rinse liquid is supplied from the valve 53 to the drainage pipe 45. As a result, the rinse liquid in the rinse liquid pipe 47 can be drained (discarded).

When the adjustment valve 54 is opened in the operating state of the suction device 55, the function of the suction device 55 becomes effective and the inside of the suction pipe 48 is sucked. Therefore, the treatment liquid (chemical solution or rinse liquid) contained in the pipe 401, the nozzle 400, and the suction pipe 48 is drawn into the suction pipe 48. Since the suction force of the suction device 55 is relatively weak, the suction speed is relatively slow.

Further, the suction device 57 is, for example, always in an operating state. In addition, suction may be started by valve operation. When the valve 56 is opened in the operating state of the suction device 57, the function of the suction device 57 becomes effective and the inside of the suction pipe 49 is sucked. Therefore, the treatment liquid (chemical solution or rinse liquid) contained in the suction pipe 49, the connection pipe 44, the pipe 401, and the nozzle 400 is drawn into the suction pipe 49. Since the suction force of the suction device 57 is stronger than that of the suction device 55, the suction speed is faster than that of the suction device 55.

<About the operation of the board processing device>
Next, the operation of the substrate processing apparatus according to the present embodiment will be described with reference to FIGS. 16 to 19. Here, FIGS. 16, 17, 18 and 19 are schematic views for explaining the operations of the supply and suction mechanism 38 and the supply and suction mechanism 39 among the operations of the substrate processing apparatus.

The substrate processing method by the substrate processing apparatus according to the present embodiment includes a step of performing chemical solution treatment on the substrate W conveyed to the processing unit UTb, a step of performing cleaning treatment on the substrate W subjected to chemical solution treatment, and cleaning. A step of performing a drying treatment on the treated substrate W and a step of carrying out the dried substrate W from the processing unit UTb are provided.

In the chemical solution treatment among the above, first, as shown in FIG. 16, the valve 50 and the valve 52 shown in FIG. 15 are opened under the control of the control unit 90, and the chemical solution 200 is discharged through the pipe 401. Supply. Then, the chemical solution 200 is discharged from the ejection port of the nozzle 400 to the substrate W.

Next, as shown in FIG. 17, the valve 50 and the valve 53 shown in FIG. 15 are opened under the control of the control unit 90, and the rinse liquid 201 is supplied through the pipe 401. Then, the rinse liquid 201 is discharged from the discharge port of the nozzle 400 to the substrate W.

Next, as shown in FIG. 18, the discharge of the rinse liquid 201 is stopped, and the valve 50 and the valve 56 shown in FIG. 15 are opened under the control of the control unit 90, and the suction pipe 49 is connected. The chemical solution or rinse solution contained in the pipe 44, the pipe 401 and the nozzle 400 is drawn into the suction pipe 49. At this time, the atmosphere of the chemical solution 200 and the rinsing solution 201 in the chamber 80 may also be drawn into the suction pipe 49 through the discharge port of the nozzle 400. By opening the adjusting valve 54 together, the chemical solution 200 or the rinsing solution 201 contained in the pipe 401 and the nozzle 400 may be drawn into the suction pipe 48.

On the other hand, as shown in FIG. 18, the corresponding valve is opened by the control of the control unit 90, and the rinse liquid 202 is supplied through the pipe 403. Then, the rinse liquid 202 is discharged from the discharge port of the nozzle 402 to the substrate W. The atmosphere of the rinse liquid 202 in the chamber 80 may be drawn into the suction pipe 49 through the discharge port of the nozzle 400 in the same manner as described above.

Next, after the suction operation in the nozzle 400 is stopped, as shown in FIG. 19, the corresponding valve is opened by the control of the control unit 90, and the chemical solution 203 is supplied through the nozzle 402. Then, the chemical solution 203 is discharged from the discharge port of the nozzle 402 to the substrate W.

Here, in the substrate processing method according to the present embodiment, if the supply of the chemical liquid 203 via the nozzle 402 is started after the suction operation in the nozzle 400 is stopped, the supply of the rinse liquid 201 via the nozzle 400 and the supply of the rinse liquid 201 via the nozzle 400 are started. The supply of the rinse liquid 202 via the nozzle 402 does not have to be performed together. However, by supplying the above-mentioned rinse liquid while the suction operation of the nozzle 400 is being performed, in addition to cleaning the upper surface of the substrate W, a liquid film is formed on the upper surface of the substrate W to form the substrate. Contamination of W can be suppressed.

Further, either one of the supply of the rinse liquid 201 via the nozzle 400 and the supply of the rinse liquid 202 via the nozzle 402 may be performed.

According to the above, since the supply of the chemical solution 203 from the nozzle 402 is started after the suction operation of the chemical solution 200 or the like via the nozzle 400 is stopped, the chemical solution in the chamber 80 is started in the nozzle 400 and the pipe 401. It is suppressed that the atmosphere of 203 is sucked. Therefore, it is sufficiently suppressed that the chemical solution 200 and the chemical solution 203 are mixed in the nozzle 400 and the pipe 401.

<Fourth Embodiment>
A substrate processing method and a substrate processing apparatus according to the present embodiment will be described. In the following description, components similar to those described in the above-described embodiments will be illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate. ..

<About the configuration of the board processing device>
FIG. 20 is a diagram schematically showing an example of the configuration of the processing unit UTC according to the present embodiment. The operation of each configuration in the processing unit UTC is controlled by the control unit 90.

The processing unit UTc includes a chamber 80, a spin chuck 5, a pipe 320 to which a nozzle 310 for discharging the processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected, and a spin. At the center of the upper surface of the substrate W held by the spin chuck 5, the pipe 322 to which the nozzle 312 for discharging the processing liquid is connected toward the center of the upper surface of the substrate W held by the chuck 5 is connected. A pipe 324 to which a nozzle 314 for discharging the treatment liquid is connected to the nozzle 314 for discharging the treatment liquid toward the center of the upper surface of the substrate W held by the spin chuck 5 is connected. A supply and suction mechanism 330 for selectively supplying, for example, an alkaline chemical solution and a rinse solution to the pipe 326 and the pipe 320, and sucking the chemical solution and the rinse solution in the nozzle 310 and the pipe 320. For example, a supply and suction mechanism 332 for selectively supplying an acidic chemical solution and a rinse solution to the pipe 322 and sucking the chemical solution and the rinse solution in the nozzle 312 and the pipe 322, and the pipe 324, for example. , An organic solvent such as IPA (isopropyl alcohol), and a supply and suction mechanism 334 for sucking the organic solvent in the nozzle 314 and the pipe 324, and for example, another chemical solution is supplied to the pipe 326. In addition, a supply and suction mechanism 336 for sucking the chemical solution in the nozzle 316 and the pipe 326, a support portion 302 that integrally supports the nozzle 310, the nozzle 312, the nozzle 314 and the nozzle 316, and the support portion 302. Includes a nozzle arm 300 attached to the end and a cup 17.

The nozzle arm 300 includes an arm portion 300A, a shaft body 300B, and an actuator 300C. The actuator 300C adjusts the angle around the axis of the shaft body 300B. One end of the arm portion 300A is fixed to the shaft body 300B, and the other end portion of the arm portion 300A is arranged away from the axis of the shaft body 300B. Further, a support portion 302 is attached to the other end portion of the arm portion 300A. By doing so, the support portion 302 can swing between the processing position (the position where the processing liquid is discharged to the substrate W) and the retracted position (the position where the processing liquid is retracted from above the substrate W) in the radial direction of the substrate W. It is composed. The moving direction of the support portion 302 due to the swing may have a component in the radial direction of the substrate W, and does not have to be exactly parallel to the radial direction of the substrate W. Here, the nozzle arm 300 may be moved up and down in the vertical direction by a motor (not shown) or the like. In that case, the distance between the support portion 302 attached to the end portion of the nozzle arm 300 and the upper surface of the substrate W can be adjusted by raising and lowering the nozzle arm 300.

Above the substrate W, a nozzle 310, a nozzle 312, a nozzle 314, and a nozzle 316 integrally supported by the support portion 302 are arranged so as to face the upper surface of the substrate W, respectively. The supply and suction mechanism 330 selectively supplies, for example, an alkaline chemical solution and a rinse solution to the pipe 320 and the nozzle 310, and sucks the chemical solution and the rinse solution in the pipe 320 and the nozzle 310. The supply and suction mechanism 332 selectively supplies, for example, an acidic chemical solution and a rinse solution to the pipe 322 and the nozzle 312, and sucks the chemical solution and the rinse solution in the pipe 322 and the nozzle 312.

<Supply and suction mechanism>
FIG. 21 is a diagram schematically showing an example of the configuration of the supply and suction mechanism 330 whose example is shown in FIG. 20. The configurations of the supply and suction mechanism 332, the supply and suction mechanism 334, and the supply and suction mechanism 336 are the same as those shown in FIG. 21 except for the type of the processing liquid to be supplied.

As shown in FIG. 21, the supply and suction mechanism 330 includes a connection pipe 44 connected to the upstream end of the pipe 320, a liquid drain pipe 45 further connected to the connection pipe 44, and a liquid drain. A valve 51 provided in the pipe 45, a chemical liquid pipe 46 connected to the upstream side of the connecting pipe 44, a valve 52 provided in the chemical liquid pipe 46, and a rinse liquid pipe 47 connected to the upstream side of the connecting pipe 44. The valve 53 provided in the rinse liquid pipe 47, the valve 50 provided in the pipe 320 downstream of the connection pipe 44, the suction pipe 48 branching from the pipe 320 downstream of the valve 50, and suction. The adjustment valve 54 provided in the pipe 48, the suction device 55 further connected to the suction pipe 48, the suction pipe 49 further connected to the connection pipe 44, the valve 56 provided in the suction pipe 49, and the suction pipe. A suction device 57 further connected to the 49 is provided. The drainage pipe 45 is connected to a drainage facility outside the machine. Further, the suction device 55 and the suction device 57 may be provided in either case.

When the valve 52 and the valve 50 are opened with the other valves closed, the chemical liquid is supplied to the pipe 320 from the chemical liquid pipe 46, and the chemical liquid is discharged downward from the discharge port of the nozzle 310.

Further, when the valve 52 and the valve 51 are opened with the other valves closed, the chemical liquid is supplied from the chemical liquid pipe 46 to the drainage pipe 45. As a result, the chemical solution in the chemical solution pipe 46 can be drained (discarded).

When the valve 53 and the valve 50 are opened with the other valves closed, the rinse liquid is supplied to the pipe 320 from the valve 53, and the rinse liquid is discharged downward from the discharge port of the nozzle 310. ..

Further, when the valve 53 and the valve 51 are opened with the other valves closed, the rinse liquid is supplied from the valve 53 to the drainage pipe 45. As a result, the rinse liquid in the rinse liquid pipe 47 can be drained (discarded).

When the adjustment valve 54 is opened in the operating state of the suction device 55, the function of the suction device 55 becomes effective and the inside of the suction pipe 48 is sucked. Therefore, the treatment liquid (chemical solution or rinse liquid) contained in the pipe 320, the nozzle 310, and the suction pipe 48 is drawn into the suction pipe 48. Since the suction force of the suction device 55 is relatively weak, the suction speed is relatively slow.

Further, the suction device 57 is, for example, always in an operating state. In addition, suction may be started by valve operation. When the valve 56 is opened in the operating state of the suction device 57, the function of the suction device 57 becomes effective and the inside of the suction pipe 49 is sucked. Therefore, the treatment liquid (chemical solution or rinse liquid) contained in the suction pipe 49, the connection pipe 44, the pipe 320, and the nozzle 310 is drawn into the suction pipe 49. Since the suction force of the suction device 57 is stronger than that of the suction device 55, the suction speed is faster than that of the suction device 55.

<About the operation of the board processing device>
Next, the operation of the substrate processing apparatus according to the present embodiment will be described with reference to FIGS. 22 to 25. Here, FIGS. 22, 23, 24, and 25 are schematic views for explaining the operation of the substrate processing apparatus, in particular, the operation of supplying the processing liquid from the nozzle 310 and the nozzle 312.

The substrate processing method by the substrate processing apparatus according to the present embodiment includes a step of performing a chemical solution treatment on the substrate W conveyed to the processing unit UTC, a step of performing a chemical solution treatment on the substrate W on which the chemical solution treatment has been performed, and a cleaning process. A step of performing a drying process on the treated substrate W and a step of carrying out the dried substrate W from the processing unit UTC are provided.

In the chemical solution treatment among the above, first, as shown in FIG. 22, the valve 50 and the valve 52 shown in FIG. 21 are opened under the control of the control unit 90, and the chemical solution 200 is discharged through the pipe 320. Supply. Then, the chemical solution 200 is discharged from the discharge port of the nozzle 310 to the substrate W.

Next, as shown in FIG. 23, the valve 50 and the valve 53 shown in FIG. 21 are opened under the control of the control unit 90, and the rinse liquid 201 is supplied through the pipe 320. Then, the rinse liquid 201 is discharged from the discharge port of the nozzle 310 to the substrate W.

Next, as shown in FIG. 24, the discharge of the rinse liquid 201 is stopped, and the valve 50 and the valve 56 shown in FIG. 21 are opened under the control of the control unit 90 to connect the suction pipe 49. The chemical solution or rinse solution contained in the pipe 44, the pipe 320, and the nozzle 310 is drawn into the suction pipe 49. At this time, the atmosphere of the chemical solution 200 and the rinsing solution 201 in the chamber 80 may also be drawn into the suction pipe 49 through the discharge port of the nozzle 310. By opening the adjusting valve 54 together, the chemical liquid 200 or the rinsing liquid 201 contained in the pipe 320 and the nozzle 310 may be drawn into the suction pipe 48.

On the other hand, as shown in FIG. 24, the corresponding valve is opened under the control of the control unit 90 to supply the rinse liquid 202 via the pipe 322. Then, the rinse liquid 202 is discharged from the discharge port of the nozzle 312 to the substrate W. The atmosphere of the rinse liquid 202 in the chamber 80 may be drawn into the suction pipe 49 through the discharge port of the nozzle 310 in the same manner as described above.

Next, after the suction operation in the nozzle 310 is stopped, as shown in FIG. 25, the corresponding valve is opened by the control of the control unit 90, and the chemical solution 203 is supplied through the nozzle 312. Then, the chemical solution 203 is discharged from the discharge port of the nozzle 312 to the substrate W.

Here, in the substrate processing method according to the present embodiment, if the supply of the chemical liquid 203 via the nozzle 312 is started after the suction operation in the nozzle 310 is stopped, the supply of the rinse liquid 201 via the nozzle 310 and the supply of the rinse liquid 201 via the nozzle 310 are started. The supply of the rinse liquid 202 via the nozzle 312 does not have to be performed together. However, by supplying the above-mentioned rinse liquid while the suction operation of the nozzle 310 is being performed, in addition to cleaning the upper surface of the substrate W, a liquid film is formed on the upper surface of the substrate W to form the substrate. Contamination of W can be suppressed.

Further, either one of the supply of the rinse liquid 201 via the nozzle 310 and the supply of the rinse liquid 202 via the nozzle 312 may be performed.

According to the above, after the suction operation of the chemical solution 200 or the like via the nozzle 310 is stopped, the supply of the chemical solution 203 from the nozzle 312 located in the vicinity of the nozzle 310 is started, so that the inside of the nozzle 310 and the inside of the pipe 320 In addition, the atmosphere of the chemical solution 203 in the chamber 80 is suppressed from being sucked. Therefore, it is sufficiently suppressed that the chemical solution 200 and the chemical solution 203 are mixed in the nozzle 310 and the pipe 320.

<Effects caused by the above-described embodiments>
Next, an example of the effect caused by the above-described embodiment will be shown. In the following description, the effect is described based on the specific configuration shown in the embodiment described above, but to the extent that the same effect occurs, the examples are described in the present specification. May be replaced with other specific configurations indicated by.

Further, the replacement may be made across a plurality of embodiments. That is, it may be the case that the respective configurations shown in the examples in different embodiments are combined to produce the same effect.

According to the embodiment described above, in the substrate processing method, the first chemical solution is discharged from the first nozzle to the substrate W. Here, the first nozzle corresponds to, for example, any one of nozzle 8, nozzle 310, nozzle 400, and the like (hereinafter, for convenience, any one of these is associated with each other. May be stated). Further, the first chemical solution corresponds to, for example, a chemical solution 200 or the like. Then, after the chemical solution 200 is discharged, the liquid in the nozzle 8 (for example, the chemical solution 200 or the rinse liquid 201) is sucked. Then, after the suction of the liquid in the nozzle 8 is stopped, the second chemical solution different from the chemical solution 200 is discharged from the second nozzle to the substrate W. Here, the second nozzle corresponds to, for example, any one of the nozzle 10, the nozzle 312, the nozzle 402, and the like (hereinafter, for convenience, any one of these is associated with each other. May be stated). Further, the second chemical solution corresponds to, for example, the chemical solution 203 or the like.

According to such a configuration, the supply of the chemical solution 203 from the nozzle 10 is started after the suction operation of the chemical solution 200 or the like via the nozzle 8 is stopped. Therefore, the atmosphere of the chemical solution 203 is suppressed from being sucked into the nozzle 8. Therefore, it is sufficiently suppressed that the chemical solution 200 and the chemical solution 203 are mixed in the nozzle 8. As a result, it is not necessary to separate the nozzles in advance in order to avoid contact between the chemicals discharged between the plurality of nozzles. That is, the degree of freedom in nozzle arrangement is improved.

In addition, when other configurations shown in the present specification are appropriately added to the above configurations, that is, when other configurations in the present specification not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

Further, if there are no particular restrictions, the order in which each process is performed can be changed.

Further, according to the embodiment described above, in the substrate processing method, the rinse liquid 201 or the rinse liquid 202 is discharged to the substrate W after the chemical liquid 200 is discharged and before the chemical liquid 203 is discharged. do. According to such a configuration, the rinsing liquid 201 or the rinsing liquid 202 is supplied while the suction operation of the nozzle 8 is performed, so that the upper surface of the substrate W is cleaned and the upper surface of the substrate W is cleaned. By forming a liquid film of the rinsing liquid, contamination of the substrate W can be suppressed.

Further, according to the embodiment described above, the step of sucking the liquid in the nozzle 8 is completed before the step of discharging the rinse liquid 201 or the rinse liquid 202. According to such a configuration, the step of sucking the liquid in the nozzle 8 can be completed while the liquid film of the rinse liquid is formed on the upper surface of the substrate W. Therefore, contamination of the substrate W can be suppressed.

Further, according to the embodiment described above, the rinse liquid 201 is discharged from the nozzle 8 before the step of sucking the liquid in the nozzle 8. According to such a configuration, the chemical solution 200 remaining after cleaning the upper surface of the substrate W and the inside of the nozzle 8 can be sucked, so that the amount of the chemical solution 200 remaining can be reduced.

Further, according to the embodiment described above, the rinse liquid 202 is discharged from the nozzle 10 during the step of sucking the liquid in the nozzle 8. According to such a configuration, the rinse liquid 202 is supplied through the nozzle 10 while the suction operation of the nozzle 8 is being performed, so that the upper surface of the substrate W is cleaned and the upper surface of the substrate W is cleaned. By forming a liquid film of the rinsing liquid, contamination of the substrate W can be suppressed.

Further, according to the embodiment described above, the steps of discharging the rinsing liquid are sequentially performed in both the nozzle 8 and the nozzle 10. According to such a configuration, the rinse liquid can be discharged before the suction operation of the nozzle 8 and during the suction operation. Therefore, the upper surface of the substrate W is cleaned while reducing the amount of the remaining chemical solution 200. Further, the contamination of the substrate W can be suppressed by forming a liquid film of the rinse liquid on the upper surface of the substrate W.

Further, according to the embodiment described above, one of the chemical solution 200 and the chemical solution 203 is an acidic liquid and the other is an alkaline liquid. According to such a configuration, it is possible to suppress mixing (touching) between chemicals that are prohibited from touching.

Further, according to the embodiment described above, the rinsing liquid 201 or the rinsing liquid 202 is water (DIW). According to such a configuration, the inside of the nozzle and the upper surface of the substrate W can be effectively cleaned.

Further, according to the embodiment described above, the nozzle 8 and the nozzle 10 are commonly provided in the central portion of the cutoff plate 27 (or the cutoff plate 27A) arranged so as to face the substrate W. According to such a configuration, the atmosphere of the chemical solution 200 in the (sealed) space between the substrate W and the blocking plate 27 (or the blocking plate 27A) through the ejection port of the nozzle 8 and further, the atmosphere of the chemical solution 203. However, since the supply of the chemical solution 203 from the nozzle 10 is started after the suction operation of the chemical solution 200 or the like via the nozzle 8 is stopped, the atmosphere of the chemical solution 203 is sucked into the nozzle 8. Is suppressed.

Further, according to the embodiment described above, the nozzle 8 and the nozzle 10 (or the nozzle 310 and the nozzle 312) are arranged in the vicinity of each other. According to such a configuration, the atmosphere of the chemical solution 200 and the atmosphere of the chemical solution 203 discharged through the nozzle 10 located in the vicinity are easily sucked through the ejection port of the nozzle 8, but the nozzle 8 is easily sucked. After the suction operation of the chemical solution 200 or the like is stopped, the supply of the chemical solution 203 from the nozzle 10 is started, so that the atmosphere of the chemical solution 203 is suppressed from being sucked into the nozzle 8.

According to the embodiment described above, the substrate processing apparatus includes a nozzle 8, a supply and suction mechanism 14, and a nozzle 10. The nozzle 8 discharges the chemical solution 200 onto the substrate W. The supply and suction mechanism 14 sucks the liquid in the nozzle 8 after the chemical liquid 200 is discharged. After the suction of the liquid in the nozzle 8 is stopped, the nozzle 10 discharges the chemical solution 203 different from the chemical solution 200 to the substrate W.

According to such a configuration, the supply of the chemical solution 203 from the nozzle 10 is started after the suction operation of the chemical solution 200 or the like via the nozzle 8 is stopped. Therefore, the atmosphere of the chemical solution 203 is suppressed from being sucked into the nozzle 8. Therefore, it is sufficiently suppressed that the chemical solution 200 and the chemical solution 203 are mixed in the nozzle 8. As a result, it is not necessary to separate the nozzles in advance in order to avoid contact between the chemicals discharged between the plurality of nozzles. That is, the degree of freedom in nozzle arrangement is improved.

Further, when other configurations shown in the present specification are appropriately added to the above configurations, that is, when other configurations in the present specification not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

<About the modified example of the embodiment described above>
In the embodiments described above, the dimensions, shapes, relative arrangement relationships, implementation conditions, etc. of each component may also be described, but these are examples in all aspects. It shall not be limited.

Therefore, innumerable variations and equivalents for which examples are not shown are envisioned within the scope of the techniques disclosed herein. For example, when transforming, adding or omitting at least one component, or when extracting at least one component in at least one embodiment and combining it with the component in another embodiment. Shall be included.

Further, in the above-described embodiment, when the material name or the like is described without being specified, the material contains other additives, for example, an alloy or the like, as long as there is no contradiction. It shall be included.

Further, as long as there is no contradiction, the components described as being provided with "one" in the above-described embodiment may be provided with "one or more".

Furthermore, each component in the embodiments described above is a conceptual unit, and within the scope of the technique disclosed herein, one component comprises a plurality of structures. It is assumed that one component corresponds to a part of a structure, and further, a case where a plurality of components are provided in one structure is included.

Further, each component in the above-described embodiment shall include a structure having another structure or shape as long as it exhibits the same function.

1 Substrate processing equipment 5 Spin chucks 8,10,12,13,21,310,312,314,316,400,402 Nozzles 14,15,16,30,38,39,330,332,334,336 Supply and Suction mechanism 17 cup 17a upper end 18 partition wall 19 FFU
20 Exhaust duct 22 Spin motor 23 Spin shaft 24 Spin base 25 Holding member 26, 26A Opposing member 27, 27A Blocking plate 28 Rotating shaft 29 Board facing surface 31 Support arm 32 Shaft nozzle 33 Casing 34 Rotating mechanism 35 Elevating mechanism 36 Inactive gas Supply source 44 Connection pipe 45 Drainage pipe 46 Chemical liquid pipe 47 Rinse liquid pipe 48,49 Suction pipe 50, 51, 52, 53, 56 Valve 54 Adjustment valve 55, 57 Suction device 80 Chamber 90 Control unit 91 CPU
92 ROM
93 RAM
94 Storage device 94P Processing program 95 Bus line 96 Input section 97 Display section 98 Communication section 108, 110, 112, 113, 121, 320, 322, 324, 326, 401, 403 Piping 127 Claw section 132 Through hole 200, 203 Chemical solution 201,202 Rinse liquid 300 Nozzle arm 300A Arm part 300B Shaft body 300C Actuator 302 Support part

Claims (12)

The process of ejecting the first chemical solution from the first nozzle onto the substrate,
A step of sucking the liquid in the first nozzle after the first chemical liquid is discharged, and a step of sucking the liquid in the first nozzle.
After the suction of the liquid in the first nozzle is stopped, the substrate is provided with a step of discharging a second chemical solution different from the first chemical solution from the second nozzle to the substrate.
Board processing method. The substrate processing method according to claim 1.
Further comprising a step of discharging the rinse liquid onto the substrate after the first chemical liquid is discharged and before the second chemical liquid is discharged.
Board processing method. The substrate processing method according to claim 2.
The step of sucking the liquid in the first nozzle is completed before the step of discharging the rinse liquid.
Board processing method. The substrate processing method according to claim 2 or 3.
The rinse liquid is discharged from the first nozzle before the step of sucking the liquid in the first nozzle.
Board processing method. The substrate processing method according to any one of claims 2 to 4.
The rinse liquid is discharged from the second nozzle during the step of sucking the liquid in the first nozzle.
Board processing method. The substrate processing method according to any one of claims 2 to 5.
The step of discharging the rinse liquid is performed sequentially in time in both the first nozzle and the second nozzle.
Board processing method. The substrate processing method according to any one of claims 1 to 6.
One of the first chemical solution and the second chemical solution is an acidic liquid and the other is an alkaline liquid.
Board processing method. The substrate processing method according to any one of claims 2 to 6.
The rinse solution is water,
Board processing method. The substrate processing method according to any one of claims 1 to 8.
The first nozzle and the second nozzle are commonly provided in the central portion of the blocking plate arranged so as to face the substrate.
Board processing method. The substrate processing method according to any one of claims 1 to 9.
The first nozzle and the second nozzle are arranged close to each other.
Board processing method. The substrate processing method according to any one of claims 1 to 10.
The step of sucking the liquid in the first nozzle is performed above the substrate.
Board processing method. The first nozzle that discharges the first chemical solution to the substrate,
A suction mechanism that sucks the liquid in the first nozzle after the first chemical liquid is discharged,
After the suction of the liquid in the first nozzle is stopped, the substrate is provided with a second nozzle for discharging a second chemical solution different from the first chemical solution.
Board processing equipment.

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